Quarter 4, 2004 SG1009Q42004 Rev 0

What’s New!
Market
900 MHz Cellular Base Station CDMA 1.9 GHz Cellular Base Station W -CDMA 2.1 GHz Cellular Base Station W -CDMA 3.5 GHz Power GaAs Transistors General Purpose Linear Amplifiers ICs CATV GaAs

Product
MRF5S9070NR1, MRF5S9100MR1, MRF5S9100MBR1, MRF5S9100NR1, MRF5S9100NBR1, MRF5S9101MR1, MRF5S9101MBR1, MRF5S9101NR1, MRF5S9101NBR1, MRF9200LR3, MRF9200LSR3 MRF5S19060NR1, MRF5S19060NBR1, MRF5S19060MR1, MRF5S19060MBR1, MRF5S19090HR3, MRF5S19090HSR3, MRF5S19100HR3, MRF5S19100HSR3, MRF6S19100HR3, MRF6S19100HSR3, MRF5S19130HR3, MRF5S19130HSR3, MRF5S19150HR3, MRF5S19150HSR3 MRF5S21090HR3, MRF5S21090HSR3, MRF5P21180HR6, MRF6S21100HR3, MRF6S21100HSR3, MRF6S21140HR3, MRF6S21140HSR3, MRF6P21190HR6 MRFG35030R5 MMG3001NT1, MMG3002NT1, MMG3003NT1 MHW1346, MHW8247A, MHW8267A, MHW8342, MHW9186A, MHW9247A, MHW9267A

Scheduled Introductions for 2004
Market
GPS (Single Chip GPS Solution) GSM Cellular Cellular, GPS, ISM 900 MHz Cellular Base Station GSM/GSM EDGE/TDMA 1.8 GHz Cellular Base Station CDMA 1.9 GHz Cellular Base Station W -CDMA 2.1 GHz Cellular Base Station 2.4 GHz ISM 2.4 GHz ZigBeet Networking MMDS 2.6 GHz Cellular Base Station WLAN CATV Silicon Bipolar MG4100, FS-Oncore MMM6035 MC13820 MRF6S9130H, MRF6S9130HS MRF6S18060N, MRF6S18060NB, MRF6S18060M, MRF6S18060MB, MRF6S18090N, MRF6S18090NB, MRF6S18090M, MRF6S18090MB MRF6S19060N, MRF6S19060NB, MRF6S19060M, MRF6S19060MB, MRF6S19100N, MRF6S19100NB, MRF6S19100M, MRF6S19100MB, MRF6S19140H, MRF6S19140HS MRF6S21060N, MRF6S21060NB, MRF6S21060M, MRF6S21060MB, MRF6S21100N, MRF6S21100NB, MRF6S21100M, MRF6S21100MB MC13191 MC13192 MRF6P27160HR6, MRF6S27085HR3, MRF6S27085HSR3 MMG2401 MHW7312, MHW8312, MHW8342

Product

SG1009−2 SG1009Q42004

What’s New! (continued)
2.4 GHz TRANSCEIVERS FOR PROPRIETARY AND ZigBeet NETWORKING
Freescale Semiconductor introduces two new transceiver ICs as part of its scalable 2.4 GHz connectivity solutions. The MC13192 includes a complete 250 kbps Direct Sequence Spread Spectrum (DSSS) packet modem compliant with the IEEE 802.15.4 WPAN Standard. It interfaces with Freescale’s new MC9S08 family of 8−bit microprocessors to provide proprietary 802.15.4 or ZigBee connectivity. Interface with the MCU is via SPI allowing the ultimate in flexibility and scalability. Freescale’s complete Z−stack ZigBee software stack will be available by year’s end. Freescale’s 802.15.4 MAC is available now. The MC13191 targets low−cost, simple point−to−point and star network applications. It also includes a 250 kbps DSSS packet modem and interfaces with a variety of MCUs via SPI. A Simple Medium Access Control software stack of less than 4 kbytes provides a starting point for point−to−point monitoring and control applications. Now, an expanded portfolio of HV6 devices is available with options including high−performing, high power, ceramic devices and cost−effective 2000 MHz plastic RF transistors qualified at 200_C maximum die temperature. Freescale offers HV6 devices in both ceramic and plastic. The HV6 ceramic family includes the MRF6S19100H/S, MRF6S19140H/S, MRF6S21100H/S and MRF6S21140H/S devices. The HV6 plastic family, which provides a reliable, robust and economical alternative to ceramic, includes the MRF6S19060N/NB, MRF6S19100N/NB, MRF6S21060N/NB and MRF6S21100N/NB devices.

SINGLE CHIP GPS SOLUTION FOR MS−BASED, MS−ASSISTED AND AUTONOMOUS APPLICATIONS
The MG4100 device is the industry’s first commercial single chip GPS solution. Integrating all the functional blocks of a GPS receiver into a tiny 7*7 mm FBGA, the device offers simplicity of use, fast time to market and high performance. Thanks to the integrated ARM7 processor, real−time host processing tasks are eliminated, reducing software engineering risks and enabling host platform flexibility. Once software is bootloaded into the IC, it is capable of supporting Assisted−GPS and Autonomous operation, with signal detection to −152 dBm. The low IF front end and integrated LNA support the use of passive or active antennas, and system level clocks can be shared from the host using the onboard fractional synthesizer, further reducing costs. Serial communications are via a configurable SPI/UART port.

NEW FAMILY OF InGaP HBT AMPLIFIERS DESIGNED FOR USE IN GENERAL PURPOSE APPLICATIONS
Freescale Semiconductor introduces InGaP HBT general purpose amplifiers (GPAs) designed for a broad range of Class A, small−signal, high linearity, general purpose applications. These devices (MMG3001NT1, MMG3002NT1, MMG3003NT1 and MMG3005) are the first of a full portfolio of GPAs suitable for applications with frequencies from 0.04 to 3.6 GHz and can be used in applications such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS or general small−signal RF. Freescale’s InGaP HBT GPA portfolio offers high volume production and drop−in replacement capability, better thermal characteristics and better ruggedness compared to the competition. The MMG3001NT1, MMG3002NT1 and MMG3003NT1 are in full production. Samples of the MMG3005 are expected early in Q4, 2004.

FS ONCOREt− TINY FORM FACTOR GPS MODULE
The FS Oncore module is a complete GPS receiver in a tiny 12*16.6 mm LGA package. Leveraging the features of the MG4100 single chip solution, it brings exceptional ease of use and program risk reduction. By eliminating unnecessary power and RF connectors, FS Oncore offers substantial cost savings when compared to traditional GPS modules. Since the module is supplied fully tested for GPS performance, further cost savings are made in the customer’s final test environment, removing the need for multi−channel GPS simulators. Once software is bootloaded into the module, it is capable of supporting Assisted−GPS and Autonomous operation, with signal detection to −152 dBm. Utilizing innovative software power management features, the FS Oncore only keeps the onboard TCXO active while position measurements are active, reducing power consumption between fixes. Standby power with only the RTC running between fixes is a minimal 25 µA typical. Supplied in tape and reel, the FS Oncore is the product of choice for GPS integration, from initial samples to full production.

Key Features
MMG3001NT1 • • • • • • • • • • • • • • Frequency: 40−3600 MHz P1dB: 18.5 dBm @ 900 MHz Power Gain: 20 dB @ 900 MHz Third Order Output Intercept Point: 32 dBm @ 900 MHz Single Voltage Supply Internally Matched to 50 Ohms Low Cost SOT−89 Surface Mount Package MMG3002NT1 • • • • • • • Frequency: 40−3600 MHz P1dB: 21 dBm @ 900 MHz Power Gain: 20 dB @ 900 MHz Third Order Output Intercept Point: 37.5 dBm @ 900 MHz Single Voltage Supply Internally Matched to 50 Ohms Low Cost SOT−89 Surface Mount Package Frequency: 400−2400 MHz P1dB: 30 dBm @ 2140 MHz Power Gain: 15 dB @ 2140 MHz Third Order Output Intercept Point: 45 dBm @ 2140 MHz Single Voltage Supply Internally Prematched to 50 Ohms Low Cost PQFN 5x5 Package

50−OHM GSM/GPRS QUAD−BAND POWER AMPLIFIER MODULE USES HIIPA AND E−MODE TECHNOLOGIES
By combining High Impedance Integrated Power Amplifier (HIIPA) packaging, and true enhancement−mode (E−mode) GaAs wafer process technologies, Freescale Semiconductor is defining a new paradigm for 50−ohm power amplifier (PA) modules. The MMM5063 is currently the world’s smallest size quad−band GSM/GPRS single power supply PA module and leads the way to smaller and more economical wireless products. This PA module uses the HIIPA packaging technique to provide a 50−ohm solution without the need for additional external components. Design of the 50−ohm impedance matching network at the output of the die is accomplished with capacitors and inductors, where capacitors are integrated onto the die, and inductors are implemented by wire bonds of variable lengths. The tolerance of the capacitor values, together with the precision of the wire bonding process, allow a matching impedance value with less design variance than can be achieved by using passive components on a traditional radio board. Because of its low off−state leakage current, this true enhancement−mode device eliminates the drain−supply switch required for depletion−mode pHEMT and MESFET devices. The E−mode GaAs technology helps to reduce the cost and size of the end product by eliminating both the negative voltage generator and the drain−supply switch within the handset power amplifier section, as well as eliminating additional passive components.

MMG3003NT1

MMG3005

Frequency: 40−3600 MHz • P1dB: 24.1 dBm @ 900 MHz • Power Gain: 20 dB @ 900 MHz • Third Order Output Intercept Point: 40.5 dBm @ 900 MHz • Single Voltage Supply • Internally Matched to 50 Ohms • Low Cost SOT−89 Surface Mount Package •

EXPANDED PORTFOLIO OF 6TH GENERATION (HV6) RF LDMOS DEVICES
Designed for 2.5G and 3G wireless infrastructure applications, Freescale Semiconductor set an industry standard with the introduction of the MRF6S21100HR3, which delivers even greater power density and efficiency over previous generations.

SG1009−3 SG1009Q42004

RFICs

WIRELESS RADIO FREQUENCY PRODUCT
As a leading supplier of semiconductor products, Freescale Semiconductor has an extensive RF portfolio of products that serve the wireless infrastructure and subscriber markets. Utilizing LDMOS, BiCMOS, GaAs and SMARTMOSt technologies, Freescale is committed to the development of new products and expansion of its product offerings to meet the increasing global demands of ISM band and personal communications systems, including cellular phone, broadband data, TV broadcast, land mobile and CATV systems.

RF FRONT END ICs RFICs Downconverters
Product MC13770(42) (LNA) MC13770(43) (Mixer) Input Freq. MHz 2100 to 2170 2110 to 2170 LO Freq. Vdc n/a 2300 to 2360 2490 to 2550 190 380 IF Freq. MHz n/a Gain dB 15 −5.0 10.0 NF dB 1.5 5.0 8.0 IIP3 dBm 0 20 −3.0 Supply Current 3.0 mA 10 µA 5.0 mA Packaging 1345/ QFN−12 1345/ QFN−12 System Applicability W−CDMA, PCS, PDC W−CDMA, PCS, PDC

Power Amplifiers
Product Freq. Range MHz 880−915 1710−1785 1850−1910 824−849 880−915 1710−1875 1850−1910 Supply Voltage Range Vdc 2.7 to 5.5 Saturated Pout dBm (Typ) 35.2 33.8 34 35.2 35 33 33
Mode second.

PAE % (Typ)

Gain Pout/Pin dB (Typ)

Packaging

System Applicability

MMM5063

53 44 43 51 53 45 43

36.2 31.8 31.0 32.2 32 30 30

1383/ 7x7 mm Module 1561/ 6x6 mm Module

GSM900, DCS1800, PCS1900

MMM6035(46b)

3.0 to 4.5

GSM Cellular

(42)In LNA section, specifications are represented in High Gain Mode first and Bypass (43)In Mixer section, LO frequency ranges are specified for 190 MHz and 380 MHz IF. (46)To be introduced: a) 3Q04; b) 4Q04; c) 1Q05

SG1009−4 SG1009Q42004

GPS. ISM2400. i) R3 = 250 units. W−CDMA MC13820(18b.0 4. CDMA General Purpose Cascode Amp for VCOs. & LNAs ISM900. f) T1 = 1.46b) 800 to 2500 2.500 units.0 2.000 units.7 to 3. 2400. (46)To be introduced: a) 3Q04. b) R2 = 2.000 units. b) 4Q04.5 @ 900 MHz NF dB (Typ) 1.5 @ 1575 MHz 1.000 units. m) R2 = 2.000 units. Cellular.0 2. j) T1 = 500 units.RF BUILDING BLOCKS Amplifiers Product RF Freq. e) R2 = 1. p) R5 = 50 units.5 @ 1900 MHz 19 @ 900 MHz Output IP3 dBm (Typ) 24.000 units.38 @ 1900 MHz 0.000 units. h) R1 = 1. d) T3 = 10. Buffers. k) R2 = 450 units.000 units.5 to 3. n) R4 = 100 units.500 units.0 Supply Current mA (Typ) 9.7 to 5.2 @ 1575 MHz 1345/ QFN−12 (18)Tape and Reel Packaging Options: a) R1 = 500 units. g) R2 = 4. c) T1 = 3. PCS. c) 1Q05 RF BUILDING BLOCKS SG1009−5 SG1009Q42004 .9 @ 900 MHz Packaging System Applicability MBC13720(18c) MBC13916(18c) 419B/ SOT−363 1404/ SOT−343R ISM900.7 Standby Current µA (Typ) <20 Small Signal Gain dB (Typ) 14. PCS. Range MHz 400 to 2500 100 to 2500 Supply Voltage Range Vdc 2. o) R6 = 150 units.8 10 18 @ 1575 MHz 18.5 @ 1900 MHz 16. l) T1 = 5.

30.4 GHz ISM 1311 (QFN−32) 1311 (QFN−32) 2. RX 0. c) 1Q05 SG1009−6 SG1009Q42004 .5 −89 SPI 250 DSSS MISCELLANEOUS FUNCTIONS ADCs/DACs Product MC144110 MC144111 Function DAC DAC I/O Format Serial Serial Resolution 6 Bits 6 Bits Number of Analog Channels 6 4 On−Chip Oscillator n/a n/a Other Features Emitter−Follower Outputs Emitter−Follower Outputs Packaging DW/751D DW/751G Encoders/Decoders Product Function Number of Address Lines Maximum Number of Address Codes Depends on Decoder 243 19.30. Protocol System Applicability Packaging MC13192(46b) MC13191(46b) 2. D/751B P/648. DW/751G be introduced: a) 3Q04.15.4 500 2.0−3.4 GHz ISM 2. TX 0.4 ZigBee 2.4−2.683 Number of Data Bits Operation Packaging MC145026 MC145027 MC145028 (46)To Encoder Decoder Decoder Depends on Decoder 5 9 Depends on Decoder 4 0 Simplex Simplex Simplex P/648. Band GHz Sensitivity @ 1% PER (Typ) dBM −89 Serial Interface Data Rate (Spec) kbps Comm. TX 0.5 SPI 250 802.0−3. RX Standby Current (Typ) mA 500 Freq.4 2. b) 4Q04.4−2.37.37.RF/IF SUBSYSTEMS RF/IF SUBSYSTEMS Transceivers Product Supply Voltage V Supply Current @ 1% Duty Cycle (Typ) mA 0. DW/751G P/648.

0 V 20 @ 5.500 units. DT/948C GPS SUBSYSTEM ICs Downconverter Product MRFIC1505A(18m) RF Frequency (Typ) MHz 1575.0 V 100 @ 3. n) R4 = 100 units. i) R3 = 250 units.3 Supply Current (Typ) mA 28 Standby Current mA 3 Conversion Gain (Typ) dB 105 System Applicability GPS Packaging 932 48 LQFP Receivers Product Frequency (Typ) MHz Supply Voltage Digital Core V RF I/O V Digital Core (Typ) mA @ Oper Mode @ RF Input (dBm) MG4100(46b) 1575.000 units.000 units. f) T1 = 1.3 14 @ Integer Tracking @ −130 14 @ Integer Tracking @ −130 Supply Current RF I/O (Typ) mA @ Oper Mode @ RF Input (dBm) 40 @ Integer Tracking @ −130 42 @ Integer Tracking @ −130 15 @ Sleep −152 MS−Based GPS MS−Assisted GPS Autonomous GPS MS−Based GPS MS−Assisted GPS Autonomous GPS 64−FBGA Total Supply Current (Typ) mA A @ Oper Mode RF Sensitivity (Typ) dBm System Applicability Packaging FS−Oncore(46b) 1575. b) R2 = 2.FREQUENCY SYNTHESIS Single PLL Synthesizers Product Maximum Frequency MHz Supply Voltage V Nominal Supply Current mA 7. (46)To be introduced: a) 3Q04. o) R6 = 150 units. k) R2 = 450 units. e) R2 = 1.8−2.3 20 @ Sleep −152 24−LGA (18)Tape and Reel Packaging Options: a) R1 = 500 units. p) R5 = 50 units.500 units.0 to 9. Evaluation Kit − MC145170EVK DW/751F DW/751F P/648.2 2.5 V 3. c) 1Q05 SG1009−7 SG1009Q42004 FREQUENCY SYNTHESIS GPS SUBSYSTEM ICs . b) 4Q04.5 @ 5 V 7.000 units.7−3.000 units.2 2.8−2. d) T3 = 10.0 to 9.7−3.000 units. c) T1 = 3.0 3.7 to 5. h) R1 = 1. D/751B. Auxiliary Reference Divider.42 1.5 Parallel Interface Parallel Interface. Uses External Dual−Modulus Prescaler Serial Interface.5 @ 5 V 2@3V 6@5V Features Packaging MC145151−2 MC145152−2 MC145170−2 20 @ 5.0 V 185 @ 4.0 2. j) T1 = 500 units.000 units.000 units.42 Supply Voltage Range Vdc 2. m) R2 = 2. g) R2 = 4. l) T1 = 5.42 1.7−3.

6 Status Available RECEIVERS (ROMEO2) Product MC33591 MC33592 MC33593 MC33594 Description PLL Tuned UHF Receiver. IF BW = 500 kHz.5 to 8 MCU Interface K line (ISO−9141) Operating Voltage (V) 12 Status Available 68HC08 Family Product ROM (Kbytes) RAM (Kbytes) Flash or OTP (Kbytes) 2K Flash EEPROM (Kbytes) Timer I/O Serial MUX A/D PWM Packaging Oper Voltage (V) 1.6 Oper Freq (MHz) 4. IF BW = 500 kHz. .40_C to +85_C PLL Tuned UHF Receiver.ACCESS AND REMOTE CONTROL ACCESS AND REMOTE CONTROL Transmitters and Receivers TRANSMITTER (TANGO3) Product MC33493 Description PLL Tuned UHF Transmitter. . OOK/FSK Modulation. .40_C to +85_C PLL Tuned UHF Receiver.alone TAG Reader with Voltage Regulator Packaging SO20WB Band (kHz) 125 Data Rate 0. IF BW = 500 kHz. . OOK/FSK Modulation (Data Manager in FSK only). .0 Max Temp Flash or OTP Flash Status Comments Documentation MC68HC908RF2 n/a 128 n/a 1−CH. M Available RF transmitter integrated MC68HC908RF2/D SG1009−8 SG1009Q42004 .8 to 3. OOK/FSK Modulation. 16−Bit 12 n/a n/a n/a See Timer 32−pin LQFP (FA) C. OOK/FSK Modulation.40_C to +105_C Extended Temperature Packaging LQFP24 LQFP24 LQFP24 LQFP24 Band (MHz) 315/434 315/434 868 315/434 Data Rate (kbps) 1 to 11 1 to 11 1 to 11 1 to 11 MCU Interface SPI SPI SPI SPI Operating Voltage (V) 5 5 5 5 Status Available Available Samples Now Available TAG READER (STARC) FOR IMMOBILIZER APPLICATIONS Product MC33690 Description Stand .40_C to +125_C Packaging TSSOP14 Band (MHz) 315/434/868 Data Rate (kbps) 1 to 11 MCU Interface 2 Logic Lines Operating Voltage (V) 1. IF BW = 300 kHz. OOK Modulation.8 to 3.40_C to +85_C PLL Tuned UHF Receiver.

5 12. Several families of products have been targeted for specific markets including VHF and UHF portable/land mobile. these parts offer superior thermal performance.5 12. common .75 0. f) T1 = 1. TDMA and CDMA. i) R3 = 250 units.5 12.000 units.5 12.000 units.75 0.5 volt mobile. g) R2 = 4.0 2.5 7. dB/MHz η Eff. Land Mobile Radio. I/O = Input/Output. For additional information on RF LDMOS High Power Transistor Products. o) R6 = 150 units. GSM EDGE.0 0. k) R2 = 450 units.5 12. m) R2 = 2. PCS.500 units. d) T3 = 10.000 units. which offers excellent Class AB intermodulation performance under medium peak−to−average ratios providing a superior device choice for advanced digital modulations formats or high gain applications.90 0.5 12.signal. (37)U = Unmatched. refer to SG46/D Wireless RF Product Selector Guide.5 12.5 12.500 units.5 11/520 11. portable and base station operation. Mobile − To 520 MHz Designed for broadband VHF and UHF commercial and industrial applications. The high gain and broadband performance of these devices make them ideal for large . UMTS.5 12.000 units.source amplifier applications in 12.000 units.0 2. GSM. b) R2 = 2. and W−CDMA. n) R4 = 100 units. l) T1 = 5. (Typ) % θJC °C/W Packaging/Style VHF & UHF. This is due to the simplified package design. p) R5 = 50 units.5/12. SG1009−9 SG1009Q42004 RF TRANSISTORS . Class AB MRF1513T1(18f) MRF1511T1(18f) MRF1517T1(18f) MRF1518T1(18f) MRF1535T1(18j) MRF1535FT1(18j) MRF1550T1(18j) MRF1550FT1(18j) MRF1570T1(18j) MRF1570FT1(18j) MRF1570NT1(18j) MRF1570FNT1(18j) (18)Tape U U U U U U U U U U U U 400−520 135−175 430−520 400−520 400−520 400−520 135−175 135−175 400−470 400−470 400−470 400−470 3 CW 8 CW 8 CW 8 CW 35 CW 35 CW 50 CW 50 CW 70 CW 70 CW 70 CW 70 CW 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 7. With the unique LDMOS characteristics. and a device index. h) R1 = 1.90 0.5/7. Product Frequency Band(37) MHz Pout Watts Test Signal VDD Volts Gain (Typ)/Freq. e) R2 = 1. I = Input. c) T1 = 3.75 0.000 units. Tape and Reel Specifications.75 0. Case Dimensions for all packages. 900 MHz linear cellular.RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS Freescale Semiconductor LDMOS technology is ideally suited for RF power amplifier applications.5/175 11/520 11/520 10(Min)/520 10(Min)/520 10(Min)/175 10(Min)/175 10(Min)/470 10(Min)/470 10(Min)/470 10(Min)/470 55 55 55 55 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 50(Min) 4.75 0.75 466/1 466/1 466/1 466/1 1264/1 1264A/1 1264/1 1264A/1 1366/1 1366A/1 1366/1 1366A/1 and Reel Packaging Options: a) R1 = 500 units. digital television. j) T1 = 500 units.000 units.5 7.0 2.

i) R3 = 250 units. Class AB MRF373ALR1(18a) MRF373ALSR1(18a) MRF374A MRF372 MRF372R5(18p) MRF377 MRF377R3(18i) MRF377R5(18p) U U U I I I/O I/O I/O 470−860 470−860 470−860 470−860 470−860 470−860 470−860 470−860 75 CW 75 CW 130 PEP 180 PEP 180 PEP 45 AVG 45 AVG 45 AVG 1−Tone 1−Tone 2−Tone 2−Tone 2−Tone OFDM OFDM OFDM 32 32 32 32 32 32 32 32 18.1000 MHz.500 units.36 0. I = Input. n) R4 = 100 units.4 1.5 0.2 36 36 23 23 23 0. For additional information on RF LDMOS High Power Transistor Products. refer to SG46/D Wireless RF Product Selector Guide.000 units.5 0.000 units.RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS (continued) TV Broadcast To 1000 MHz Frequency Band(37) MHz Pout Watts Test Signal VDD Volts Gain (Typ)/Freq.8/945 18. o) R6 = 150 units.08 1. l) T1 = 5. f) T1 = 1. (Typ) % θJC °C/W Packaging/Style 800 .58 0.85 1.36 0. Case Dimensions for all packages.9 1. g) R2 = 4.5 41. SG1009−10 SG1009Q42004 . e) R2 = 1. j) T1 = 500 units. p) R5 = 50 units.2/860 18.5 41 41 42 42 12 1.8/945 50 41 41 41.0 978/− 1337/1 1265/1 360B/1 360C/1 1337/1 1265/1 360B/1 360C/1 and Reel Packaging Options: a) R1 = 500 units. k) R2 = 450 units.85 0. dB/MHz η Eff. Class AB MRF9002R2(18e) MRF9030MBR1(18a) MRF9030MR1(18a) MRF9030LR1(18a) MRF9030LSR1(18a) MRF9045MBR1(18a) MRF9045MR1(18a) MRF9045LR1(18a) MRF9045LSR1(18a) (18)Tape U U U U U U U U U 960 945 945 945 945 945 945 945 945 (3x) 2 PEP(41) 30 PEP 30 PEP 30 PEP 30 PEP 45 PEP 45 PEP 45 PEP 45 PEP 2−Tone 2−Tone 2−Tone 2−Tone 2−Tone 2−Tone 2−Tone 2−Tone 2−Tone 26 26 26 26 26 28 28 28 28 18/960 20/945 20/945 19/945 19/945 19/945 19/945 18. c) T1 = 3. m) R2 = 2. (Typ) % θJC °C/W Packaging/Style Product 470 .2/860 18.2/860 18.2/860 17. h) R1 = 1. dB/MHz η Eff.5 0.000 units.3/860 17/860 17/860 18.000 units. and a device index.36 360B/1 360C/1 375F/1 375G/1 375G/1 375G/1 375G/1 375G/1 Cellular To 1000 MHz Product Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq.500 units.08 1. (41)Three individual transistors in a single package. d) T3 = 10. b) R2 = 2.000 units.000 units.000 units. I/O = Input/Output.63 0. Tape and Reel Specifications. (37)U = Unmatched.89 0.2/860 60 60 41.1000 MHz.

500 units. i) R3 = 250 units.960 18.5/880 19.52 0.0 1.52 0. d) T3 = 10. f) T1 = 1. Tape and Reel Specifications.5/921.56 0.52 1.0 0. b) R2 = 2. o) R6 = 150 units. n) R4 = 100 units. dB/MHz η Eff.8 1.41 0.5/960 17.41 0.000 units.5/960 30 30 40 40 40 40 58 52 52 40 40 28 28 28 28 60 60 60 60 60 0. refer to SG46/D Wireless RF Product Selector Guide. (Typ) % θJC °C/W Packaging/Style 800 .5/880 17.7 0. I = Input.8/880 18/945 18/945 17/945 17/945 16/921.2/960 17.5/880 19.960 17.80 0. h) R1 = 1.9/880 17. c) T1 = 3.9/880 19.5/880 19.000 units.41 1265/1 1265/1 1337/1 1265/1 360B/1 360C/1 465D/1 465/1 465A/1 465/1 465A/1 1486/1 1484/1 1486/1 1484/1 465/1 465A/1 1486/1 1484/1 1486/1 and Reel Packaging Options: a) R1 = 500 units.56 1.RF HIGH POWER LDMOS TRANSISTORS (continued) Cellular To 1000 MHz (continued) Product Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. m) R2 = 2.8/880 17. e) R2 = 1.1 0.2/960 17.5/921.52 0.000 units.000 units.000 units.7 0. l) T1 = 5. ★New Product For additional information on RF LDMOS High Power Transistor Products. j) T1 = 500 units. Class AB (continued) MRF5S9070NR1(18a)★ MRF5S9070MR1(18a)★ MRF9060MBR1(18a) MRF9060MR1(18a) MRF9060LR1(18a) MRF9060LSR1(18a) MRF6522−70R3(18i) MRF9080LR3(18i) MRF9080LSR3(18i) MRF9085LR3(18i) MRF9085LSR3(18i) MRF5S9100NR1(18a)★ MRF5S9100NBR1(18a)★ MRF5S9100MR1(18a)★ MRF5S9100MBR1(18a)★ MRF9100R3(18i) MRF9100SR3(18i) MRF5S9101NR1(18a)★ MRF5S9101NBR1(18a)★ MRF5S9101MR1(18a)★ (18)Tape U U U U U U I I I I I I I I I I/O I/O I I I 880 880 945 945 945 945 921−960 921−960 921−960 880 880 880 880 880 880 921−960 921−960 869−960 869−960 869−960 14 AVG 14 AVG 60 PEP 60 PEP 60 PEP 60 PEP 70 CW 70 CW 70 CW 90 PEP 90 PEP 20 AVG 20 AVG 20 AVG 20 AVG 100 CW 100 CW 100 CW 100 CW 100 CW N−CDMA N−CDMA 2−Tone 2−Tone 2−Tone 2−Tone 1−Tone 1−Tone 1−Tone 2−Tone 2−Tone N−CDMA N−CDMA N−CDMA N−CDMA 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 17.7 0.960 18. Case Dimensions for all packages.80 0. g) R2 = 4. I/O = Input/Output.000 units. and a device index.5/960 17.000 units.1 0.500 units.1000 MHz. p) R5 = 50 units. SG1009−11 SG1009Q42004 RF TRANSISTORS . (37)U = Unmatched.7 0. k) R2 = 450 units.

Class AB (continued) MRF5S9101MBR1(18a)★ MRF9120R3(18i) MRF9120LR3(18i) MRF6S9130H(46b) MRF6S9130HS(46b) MRF9130LR3(18i) MRF9130LSR3(18i) MRF9135LR3(18i) MRF9135LSR3(18i) MRF9180R6(18o) MRF9200LR3(18i)★ MRF9200LSR3(18i)★ MRF9210R3(18i)★ I I I I I I I I I I I/O I/O I/O 869−960 880 880 880 880 921−960 921−960 880 880 880 880 880 880 100 CW 120 PEP 120 PEP 27 AVG 27 AVG 130 CW 130 CW 25 AVG 25 AVG 170 PEP 40 AVG 40 AVG 40 AVG 1−Tone 2−Tone 2−Tone N−CDMA N−CDMA 1−Tone 1−Tone N−CDMA N−CDMA 2−Tone N−CDMA N−CDMA N−CDMA 26 26 26 28 28 28 28 26 26 26 26 26 26 17. (Typ) % θJC °C/W Packaging/Style Product 1800 .6 0. j) T1 = 500 units.6 0.45 1484/1 375B/1 375B/1 465/1 465A/1 465/1 465A/1 465/1 465A/1 375D/1 465B/1 465C/1 375G/1 PCS and 3G To 2200 MHz Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq.5/880 16.5/880 60 39 39 30 30 48 48 25 25 39 25 25 25.6 0.000 units.5/960 16. m) R2 = 2.5/880 16.1990 15/1990 50 50 50 50 56 2.000 units.RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS (continued) Cellular To 1000 MHz (continued) Product Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. I/O = Input/Output.1 2. i) R3 = 250 units.500 units. l) T1 = 5. g) R2 = 4.500 units. GSM1900. dB/MHz η Eff.1000 MHz. SG1009−12 SG1009Q42004 .1 2. c) T1 = 3.28 0.000 units. d) T3 = 10. refer to SG46/D Wireless RF Product Selector Guide.1 465E/1 465F/1 465E/1 465F/1 1486/1 and Reel Packaging Options: a) R1 = 500 units. Case Dimensions for all packages. Tape and Reel Specifications.1990 14/1930.46b) (18)Tape I/O I/O I/O I/O I/O 1805−1880 1805−1880 1930−1990 1930−1990 1800−2000 30 CW 30 CW 30 CW 30 CW 60 CW 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 26 26 26 26 26 14/1805. I = Input.8/880 17.5 0.000 units.000 units. (37)U = Unmatched. f) T1 = 1. GSM EDGE and PCS TDMA) MRF18030ALR3(18i) MRF18030ALSR3(18i) MRF18030BLR3(18i) MRF18030BLSR3(18i) MRF6S18060NR1(18a. c) 1Q05 ★New Product For additional information on RF LDMOS High Power Transistor Products. p) R5 = 50 units.5/921.8/880 17. o) R6 = 150 units.5/880 18.1 2.45 0.28 0.45 0. k) R2 = 450 units.31 0. n) R4 = 100 units.5/880 17.2000 MHz. and a device index. (46)To be introduced: a) 3Q04.5/880 18.1880 14/1805.6 0.000 units. h) R1 = 1.5/880 16.5/921.960 17. dB/MHz η Eff. e) R2 = 1.41 0.5/880 17.960 16.000 units. Class AB (GSM1800.1880 14/1930. b) R2 = 2. b) 4Q04. (Typ) % θJC °C/W Packaging/Style 800 .

o) R6 = 150 units. I/O = Input/Output.1880 15/1805. l) T1 = 5.5/1805. Tape and Reel Specifications.46c) MRF6S18090NBR1(18a.1880 13/1805. (46)To be introduced: a) 3Q04. and a device index.1990 12.000 units.70 0.1880 13/1805.000 units. d) T3 = 10.46c) MRF18090AR3(18i) MRF18090BR3(18i) MRF18090BSR3(18i) (18)Tape I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 1800−2000 1800−2000 1800−2000 1805−1880 1805−1880 1805−1880 1930−1990 1930−1990 1930−1990 1805−1880 1805−1880 1930−1990 1930−1990 1800−2000 1800−2000 1800−2000 1800−2000 1805−1880 1930−1990 1930−1990 60 CW 60 CW 60 CW 60 CW 60 CW 60 CW 60 CW 60 CW 60 CW 85 CW 85 CW 85 CW 85 CW 90 CW 90 CW 90 CW 90 CW 90 CW 90 CW 90 CW 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 1−Tone 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 15/1990 15/1990 15/1990 13/1805.1990 13/1930. h) R1 = 1.500 units. e) R2 = 1. f) T1 = 1.2000 MHz. c) 1Q05 For additional information on RF LDMOS High Power Transistor Products.1880 12.500 units. GSM1900.000 units.5/1930.1880 13.1880 13/1930. (37)U = Unmatched.000 units.97 0. SG1009−13 SG1009Q42004 RF TRANSISTORS . c) T1 = 3. Case Dimensions for all packages. (Typ) % θJC °C/W Packaging/Style Product 1800 .5/1930.70 0.97 0.46b) MRF6S18060MR1(18a. I = Input.5/1930.RF HIGH POWER LDMOS TRANSISTORS (continued) PCS and 3G To 2200 MHz (continued) Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq.97 0. g) R2 = 4.000 units. dB/MHz η Eff.5/1930. i) R3 = 250 units.97 0. m) R2 = 2.97 0.1990 15/1805. GSM EDGE and PCS TDMA) (continued) MRF6S18060NBR1(18a.79 0.1990 13.46b) MRF6S18060MBR1(18a. p) R5 = 50 units.97 0. k) R2 = 450 units. Class AB (GSM1800. j) T1 = 500 units. b) R2 = 2.46c) MRF6S18090MBR1(18a.1990 15/1990 15/1990 15/1990 15/1990 13.79 1484/1 1486/1 1484/1 465/1 465A/1 465A/1 465/1 465A/1 465A/1 465/1 465A/1 465/1 465A/1 1486/1 1484/1 1486/1 1484/1 465B/1 465B/1 465C/1 and Reel Packaging Options: a) R1 = 500 units.46c) MRF6S18090MR1(18a.1990 13/1930. n) R4 = 100 units.000 units.79 0.46b) MRF18060AR3(18i) MRF18060ASR3(18i) MRF18060ALSR3(18i) MRF18060BR3(18i) MRF18060BSR3(18i) MRF18060BLSR3(18i) MRF18085AR3(18i) MRF18085ALSR3(18i) MRF18085BR3(18i) MRF18085BLSR3(18i) MRF6S18090NR1(18a. b) 4Q04.1990 56 56 56 45 45 45 45 45 45 52 52 50 50 52 52 52 52 52 45 45 0.70 0. refer to SG46/D Wireless RF Product Selector Guide.79 0.000 units.

80 0. d) T3 = 10.RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS (continued) PCS and 3G To 2200 MHz (continued) Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq.5/1990 36 36 23.79 0.5/1990 13/1990 13/1990 13/1990 13/1990 14.97 0.5/1990 12.CDMA) MRF19030LR3(18i) MRF19030LSR3(18i) MRF19045LR3(18i) MRF19045LSR3(18i) MRF6S19060NR1(18a. e) R2 = 1.97 0.5 23.46c) MRF6S19060MR1(18a.000 units.000 units. Class AB (2.5/1990 14.000 units.79 0.79 0. j) T1 = 500 units. (46)To be introduced: a) 3Q04. o) R6 = 150 units.500 units. (37)U = Unmatched. c) T1 = 3.80 0. SG1009−14 SG1009Q42004 .000 units.500 units.80 0.80 0. b) R2 = 2.5/1990 14.65 1.5/1990 15/1990 15/1990 15/1990 15/1990 14/1990 14/1990 14/1990 14/1990 12. I/O = Input/Output. h) R1 = 1. dB/MHz η Eff. b) 4Q04.66 1486/1 1484/1 1486/1 1484/1 465/1 465A/1 465/1 465/1 465A/1 465A/1 465/1 465A/1 and Reel Packaging Options: a) R1 = 500 units. g) R2 = 4.5 AVG 9.1 1.65 465E/1 465F/1 465E/1 465F/1 1486/1 1484/1 1486/1 1484/1 0.000 units. refer to SG46/D Wireless RF Product Selector Guide. k) R2 = 450 units.8 25.CH N.5 26 26 26 26 23 23 23 23 36 36 23 23 23 23 25.46c) MRF6S19060NBR1(18a.CDMA and W .8 2.5 AVG 12 AVG 12 AVG 12 AVG 12 AVG 12 AVG 12 AVG 12 AVG 12 AVG 60 PEP 60 PEP 18 AVG 18 AVG 18 AVG 18 AVG 18 AVG 18 AVG 2−Tone 2−Tone N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA 2−Tone 2−Tone N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA 26 26 26 26 28 28 28 28 28 28 28 28 26 26 26 26 26 26 28 28 13/1990 13/1990 14. I = Input.000 units.66 0. and a device index.1 2. f) T1 = 1. (Typ) % θJC °C/W Packaging/Style Product 2000 MHz. n) R4 = 100 units. i) R3 = 250 units. c) 1Q05 ★New Product For additional information on RF LDMOS High Power Transistor Products.46c) MRF5S19060NR1(18a)★ MRF5S19060NBR1(18a)★ MRF5S19060MR1(18a)★ MRF5S19060MBR1(18a)★ MRF19060R3(18i) MRF19060SR3(18i) MRF19085R3(18i) MRF19085LR3(18i) MRF19085SR3(18i) MRF19085LSR3(18i) MRF5S19090HR3(18i)★ MRF5S19090HSR3(18i)★ (18)Tape I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 30 PEP 30 PEP 9. p) R5 = 50 units.46c) MRF6S19060MBR1(18a. Case Dimensions for all packages.000 units.79 0. l) T1 = 5. Tape and Reel Specifications. m) R2 = 2.

I = Input. e) R2 = 1.000 units. b) R2 = 2.65 465B/1 465C/1 1486/1 1484/1 1486/1 1484/1 0.CDMA) (continued) MRF19090R3(18i) MRF19090SR3(18i) MRF6S19100NR1(18a.41 0.5 25. dB/MHz η Eff.41 0.1/1990 16.5/1990 14.1/1990 13.000 units.5/1990 13. p) R5 = 50 units.000 units.000 units.40 465/1 465A/1 465/1 465A/1 465B/1 465B/1 465B/1 465C/1 465B/1 465C/1 0. (46)To be introduced: a) 3Q04. i) R3 = 250 units.5/1990 14.44 0.64 0.5/1990 14. f) T1 = 1. d) T3 = 10.43 465B/1 465C/1 375D/1 and Reel Packaging Options: a) R1 = 500 units.46c) MRF6S19100MBR1(18a. m) R2 = 2. Case Dimensions for all packages.65 0. h) R1 = 1. k) R2 = 450 units.53 0. b) 4Q04. refer to SG46/D Wireless RF Product Selector Guide. g) R2 = 4. Class AB (2. and a device index.5 28 28 22 22 25 25 28 28 26 26 26 0.000 units.46c) MRF6S19100MR1(18a.CH N.RF HIGH POWER LDMOS TRANSISTORS (continued) PCS and 3G To 2200 MHz (continued) Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq.500 units.CDMA and W .46c) MRF6S19100NBR1(18a.40 0.46c) MRF5S19100HR3(18i)★ MRF5S19100HSR3(18i)★ MRF6S19100HR3(18i)★ MRF6S19100HSR3(18i)★ MRF19125R3(18i) MRF19125LR3(18i) MRF5S19130HR3(18i)★ MRF5S19130HSR3(18i)★ MRF6S19140H(46b) MRF6S19140HS(46b) MRF5S19150HR3(18i)★ MRF5S19150HSR3(18i)★ MRF5P20180R6 (18)Tape I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 1930−1990 90 PEP 90 PEP 22 AVG 22 AVG 22 AVG 22 AVG 22 AVG 22 AVG 22 AVG 22 AVG 24 AVG 24 AVG 26 AVG 26 AVG 29 AVG 29 AVG 32 AVG 32 AVG 38 AVG 2−Tone 2−Tone N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA N−CDMA W−CDMA 26 26 28 28 28 28 28 28 28 28 26 26 28 28 28 28 28 28 28 11.44 0. o) R6 = 150 units.5 25.5/1990 14.500 units. n) R4 = 100 units.5 25.64 0. c) T1 = 3. (37)U = Unmatched.5 25. j) T1 = 500 units.5/1990 13.5/1990 13/1990 13/1990 16/1990 16/1990 14/1990 14/1990 14/1990 35 35 25. I/O = Input/Output. l) T1 = 5.9/1990 16.000 units.5 25.000 units.5/1990 11. (Typ) % θJC °C/W Packaging/Style Product 2000 MHz. Tape and Reel Specifications.53 0.9/1990 13. c) 1Q05 ★New Product For additional information on RF LDMOS High Power Transistor Products. SG1009−15 SG1009Q42004 RF TRANSISTORS .

1 2. Class A.5 23. d) T3 = 10. m) R2 = 2. h) R1 = 1.000 units.5/2000 12.6/2170 35 35 33 33 23.5/2000 10.65 1.RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS (continued) PCS and 3G To 2200 MHz (continued) Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq.CH W . dB/MHz η Eff.000 units.5 5. p) R5 = 50 units. c) 1Q05 ★New Product For additional information on RF LDMOS High Power Transistor Products.500 units. b) R2 = 2.5/2000 11.5/2000 11.000 units.000 units.5 26 26 26 26 34 34 23 23 23 5.78 465/1 465A/1 465/1 465A/1 465A/1 and Reel Packaging Options: a) R1 = 500 units.6/2170 13.74 4. AB MRF281SR1(18a) MRF281ZR1(18a) MRF282SR1(18a) MRF282ZR1(18a) MRF284LR1(18a) MRF284LSR1(18a) U U U U U U 1930−2000 1930−2000 1930−2000 1930−2000 1930−2000 1930−2000 4 PEP 4 PEP 10 PEP 10 PEP 30 PEP 30 PEP 2−Tone 2−Tone 2−Tone 2−Tone 2−Tone 2−Tone 26 26 26 26 26 26 12.5/2170 13.0 2. l) T1 = 5.78 0.46c) MRF21060R3(18i) MRF21060SR3(18i) MRF21085R3(18i) MRF21085LSR3(18i)★ MRF21085SR3(18i)★ (18)Tape U U I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 10 PEP 10 PEP 30 PEP 30 PEP 10 AVG 10 AVG 14 AVG 14 AVG 14 AVG 14 AVG 60 PEP 60 PEP 19 AVG 19 AVG 19 AVG 2−Tone 2−Tone 2−Tone 2−Tone W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA 2−Tone 2−Tone W−CDMA W−CDMA W−CDMA 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 13. UMTS) MRF21010LR1(18a) MRF21010LSR1(18a) MRF21030LR3(18i) MRF21030LSR3(18i) MRF21045LR3(18i) MRF21045LSR3(18i) MRF6S21060NR1(18a. e) R2 = 1.2 2. j) T1 = 500 units. refer to SG46/D Wireless RF Product Selector Guide.6/2170 13.000 units.CDMA.46c) MRF6S21060MBR1(18a. k) R2 = 450 units.0 458B/1 458C/1 458B/1 458C/1 360B/1 360C/1 2200 MHz.1 1.5/2000 10.500 units. Class AB (2. (Typ) % θJC °C/W Packaging/Style Product 2000 MHz.000 units. f) T1 = 1.5/2000 33 33 28(min) 28(min) 35 35 5. b) 4Q04.000 units. n) R4 = 100 units.5/2170 13.2 4. c) T1 = 3. o) R6 = 150 units. g) R2 = 4.46c) MRF6S21060NBR1(18a. (37)U = Unmatched.02 0.5/2170 13/2170 13/2170 15/2170 15/2170 15/2170 15/2170 15/2170 15/2170 12. Case Dimensions for all packages. SG1009−16 SG1009Q42004 . I = Input.5 2. Tape and Reel Specifications.74 5.02 1. and a device index.46c) MRF6S21060MR1(18a. I/O = Input/Output.5/2170 12. i) R3 = 250 units.65 360B/1 360C/1 465E/1 465F/1 465E/1 465F/1 1486/1 1484/1 1486/1 1484/1 1.78 0. (46)To be introduced: a) 3Q04.

000 units.45 0.000 units.5/2170 15. (37)U = Unmatched.5/2170 14.000 units.65 0. c) T1 = 3.5/2170 14.9/2170 11.65 465B/1 465C/1 465/1 465A/1 1486/1 1484/1 1486/1 1484/1 0.5 26 26 27.46b) MRF6S21100MR1(18a. refer to SG46/D Wireless RF Product Selector Guide. Case Dimensions for all packages. c) 1Q05 ★New Product For additional information on RF LDMOS High Power Transistor Products.CDMA. d) T3 = 10.500 units.6 34.CH W .5/2170 15. SG1009−17 SG1009Q42004 RF TRANSISTORS .5/2170 33 33 26 26 25.000 units. e) R2 = 1.46b) MRF6S21100MBR1(18a.5 27.4/2170 13/2170 13/2170 13.45 0.000 units. (46)To be introduced: a) 3Q04.000 units.35 465/1 465A/1 465/1 465A/1 375D/1 465B/1 465C/1 465B/1 465C/1 465B/1 465C/1 Transistors = 500 units. j) T1 = 500 units. p) R5 = 50 units. I/O = Input/Output.57 0.5/2170 14.53 0.7/2170 11. k) R2 = 450 units.5/2170 14. f) T1 = 1.500 units.65 0. n) R4 = 100 units. UMTS) (continued) MRF21090R3(18i) MRF21090SR3(18i) MRF5S21090HR3(18i)★ MRF5S21090HSR3(18i)★ MRF6S21100NR1(18a. I = Input. and a device index. Tape and Reel Specifications.46b) MRF5S21100HR3(18i)★ MRF5S21100HSR3(18i)★ MRF6S21100HR3(18i)★ MRF6S21100HSR3(18i)★ MRF21120R6(3.44 0. b) R2 = 2. l) T1 = 5.65 0. h) R1 = 1.5 25.5/2170 13.5/2170 13.000 units. o) R6 = 150 units.57 0.44 0. Class AB (2.46b) MRF6S21100NBR1(18a.18o) MRF21125R3(18i) MRF21125SR3(18i) MRF5S21130HR3(18i)★ MRF5S21130HSR3(18i)★ MRF6S21140HR3(18i)★ MRF6S21140HSR3(18i)★ (3)Internal Impedance Matched Push-Pull (18)Tape and Reel Packaging Options: a) R1 I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 90 PEP 90 PEP 19 AVG 19 AVG 23 AVG 23 AVG 23 AVG 23 AVG 23 AVG 23 AVG 23 AVG 23 AVG 120 PEP 20 AVG 20 AVG 28 AVG 28 AVG 30 AVG 30 AVG 2−Tone 2−Tone W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA 2−Tone W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 11. m) R2 = 2.5 25.5/2170 14. dB/MHz η Eff.5/2170 15.53 0. (Typ) % θJC °C/W Packaging/Style Product 2200 MHz.6 27.5 18 18 26 26 27.45 0.RF HIGH POWER LDMOS TRANSISTORS (continued) PCS and 3G To 2200 MHz (continued) Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. i) R3 = 250 units.9/2170 15.35 0.5/2170 13. b) 4Q04. g) R2 = 4.7/2170 14.5 25.5 0.

CH W .000 units.500 units. UMTS) (continued) MRF5S21150R3(18i) MRF5S21150SR3(18i) MRF5P21180HR6(18o)★ MRF21180R6(3. b) R2 = 2.47 0. I = Input.25 0. Tape and Reel Specifications. m) R2 = 2.2700 MHz. e) R2 = 1. refer to SG46/D Wireless RF Product Selector Guide.46b) (18)Tape I/O I/O I/O 2600−2700 2600−2700 2600−2700 20 AVG 20 AVG 35 AVG N−CDMA N−CDMA N−CDMA 28 28 28 15. dB/MHz η Eff.000 units.31 0. d) T3 = 10.000 units.5/2655 15/2655 24. c) 1Q05 ★New Product For additional information on RF LDMOS High Power Transistor Products.000 units. (Typ) % θJC °C/W Packaging/Style 2600. I/O = Input/Output.5 22 26. g) R2 = 4. k) R2 = 450 units. Class AB (2. b) 4Q04.RF TRANSISTORS RF HIGH POWER LDMOS TRANSISTORS (continued) PCS and 3G To 2200 MHz (continued) Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq.1/2170 15. (46)To be introduced: a) 3Q04.18o) MRF6P21190HR6(18a)★ MRF5P21240R6(18o) I/O I/O I/O I/O I/O I/O 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 2110−2170 33 AVG 33 AVG 38 AVG 38 AVG 44 AVG 52 AVG W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA W−CDMA 28 28 28 28 28 28 12.5/2655 15. Case Dimensions for all packages. p) R5 = 50 units.35 465B/1 465C/1 375D/1 375D/1 375D/1 375D/1 MMDS To 2700 MHz Product Frequency Band(37) MHz Pout (Typ) Watts Test Signal VDD Volts Gain (Typ)/Freq. Class AB MRF6S27085HR3(18i.47 0.5 22 465/1 465A/1 375D/1 and Reel Packaging Options: a) R1 = 500 units.5/2170 14/2170 12. j) T1 = 500 units.5 24.000 units.46b) MRF6P27160HR6(18o. i) R3 = 250 units. (Typ) % θJC °C/W Packaging/Style Product 2200 MHz. c) T1 = 3.CDMA. (37)U = Unmatched.5/2170 12.5 24 0.000 units.500 units.000 units. f) T1 = 1.46 0. SG1009−18 SG1009Q42004 .5/2170 13/2170 25 25 25. dB/MHz η Eff. o) R6 = 150 units.46b) MRF6S27085HSR3(18i. and a device index. h) R1 = 1. l) T1 = 5. n) R4 = 100 units.

k) R2 = 450 units.3 1. d) T3 = 10.000 units. Class AB (WLL. f) T1 = 1.45 AVG/ 3550 1 AVG/ 3550 0. o) R6 = 150 units. (Typ)/Freq. j) T1 = 500 units.000 units. Watts/MHz Test Signal VDD Volts Gain (Typ)/Freq. %/MHz θJC °C/W Packaging/Style 3500. p) R5 = 50 units. I/O = Input/Output. b) R2 = 2.RF POWER GaAs TRANSISTORS Freescale Semiconductor power GaAs transistors are made using an InGaAs PHEMT epitaxial structure for superior RF efficiency and linearity. e) R2 = 1. Case Dimensions for all packages.000 units. refer to SG46/D Wireless RF Product Selector Guide. Parts are listed first by order of operating voltage. Linear Transistors Product To 6000 MHz Frequency Band(37) MHz Pout (Typ)/Freq. then by increasing output power. h) R1 = 1. I = Input.CDMA) MRFG35003MT1(18f)★ MRFG35003M6T1(18f) MRFG35005MT1(18f)★ MRFG35010 MRFG35010MT1(18f) MRFG35030R5(18p)★ U U U U U DC−5800 DC−5800 DC−5800 DC−5800 DC−5800 3400−3600 0.3 (18)Tape and Reel Packaging Options: a) R1 = 500 units.0 IC mA Packaging/Style IC mA MBC13900(18c) 15 20 1. and a device index.500 units.0 20 318M/ SOT−343 SOT 343 (15)Class A = 5.5 dB ★New Product For additional information on RF LDMOS High Power Transistor Products. c) T1 = 3.9 AVG/ 3550 3 AVG/ 3550 W−CDMA(44) W−CDMA(44) W−CDMA(44) W−CDMA(44) W−CDMA(44) W−CDMA(44) 12 6 12 12 12 12 11.000 units. dB/MHz Eff. The FETs listed in this section are designed for operation in base station infrastructure RF power amplifiers and are grouped according to frequency range and type of application.000 units.0 2.9 4.3 AVG/ 3550 0.000 units. i) R3 = 250 units. BWA.0 17 14 1. g) R2 = 4. Tape and Reel Specifications.0 2.45 AVG/ 3550 0. (44)Peak-to-Average Power Ratio = 8. l) T1 = 5. SG1009−19 SG1009Q42004 RF TRANSISTORS . m) R2 = 2.8(15) 466/1 466/1 466/1 360D/1 466/1 1490/1 I/O RF LOW POWER TRANSISTORS Product Gain − Bandwidth fτ Typ GHz NFmin @ f (Typ) dB GHz (Typ) dB Gain @ f GHz Maximum Ratings V(BR) CEO Volts 7.5/3550 9/3550 11/3550 10/3550 10/3550 12/3550 25/3550 24/3550 25/3550 30/3550 28/3550 21/3550 1. (37)U = Unmatched. n) R4 = 100 units. W.0 1.500 units.6000 MHz.000 units.

SG1009−20 SG1009Q42004 . Base Station IC Drivers Product Frequency MHz 746−960 746−960 746−960 860−960 860−960 880−2170 P1dB Watts 15 30 30 15 15 0. PHS Die Technology LDMOS LDMOS LDMOS LDMOS LDMOS LDMOS Packaging/Style MHVIC915R2 (18e) MWIC930R1 (18a) MWIC930GR1 (18a) MW4IC915MBR1 (18a) MW4IC915GMBR1 (18a) MW4IC001MR4 (18n) AB AB AB AB AB AB 978/− 1329/− 1329A/− 1329/− 1329A/− 466/1 MHVIC910HR2 (18e) MW4IC2020MBR1 (18a) MW4IC2020GMBR1(18a) MW5IC2030MBR1 (18a)★ MW5IC2030GMBR1 (18a)★ 921−960 1805−1990 1805−1990 1930−1990 1930−1990 10 20 20 30 30 39 29 29 23 23 26 26 26 27 27 AB AB AB AB AB LDMOS LDMOS LDMOS LDMOS LDMOS 978/− 1329/− 1329A/− 1329/− 1329A/− (18)Tape and Reel Packaging Options: a) R1 = 500 units.000 units. h) R1 = 1. including GSM and CDMA. and a device index. GSM/GSM EDGE N−CDMA. GSM/GSM EDGE GSM/GSM EDGE. these Class AB amplifiers are ideal for base station systems with power requirements up to 30 watts. PHS GSM/GSM EDGE.000 units. f) T1 = 1. refer to SG46/D Wireless RF Product Selector Guide. GSM/GSM EDGE N−CDMA. GSM/GSM EDGE GSM900 N−CDMA. i) R3 = 250 units. W−CDMA. ★New Product For additional information on RF LDMOS High Power Transistor Products. j) T1 = 500 units.500 units. c) T1 = 3. p) R5 = 50 units. g) R2 = 4. Tape and Reel Specifications. n) R4 = 100 units. b) R2 = 2. GSM/GSM EDGE N−CDMA.500 units. covering frequencies from 800 MHz up to 2. k) R2 = 450 units. l) T1 = 5.000 units.RF AMPLIFIER ICs AND MODULES RF AMPLIFIER ICs AND MODULES Complete amplifiers with 50 ohm input impedances are available for all popular base station transmitter systems. Base Stations Designed for applications such as macrocell drivers and microcell output stage. W−CDMA. m) R2 = 2. e) R2 = 1.000 units. d) T3 = 10.2 GHz. GSM/GSM EDGE N−CDMA.000 units. Case Dimensions for all packages. GSM/GSM EDGE N−CDMA. W−CDMA.000 units. o) R6 = 150 units.000 units.85 Gain (Typ) dB 30 30 30 30 30 13 Supply Voltage Volts 26 27 27 26 26 28 Class System Application N−CDMA. GSM/GSM EDGE N−CDMA.

1 .5 31. TDMA.500 units.000 units. ★New Product For additional information on RF LDMOS High Power Transistor Products.0 4. m) R2 = 2. l) T1 = 5.000 units. these Class AB amplifiers are ideal for base station systems with power requirements up to 10 watts.driver applications.2 Packaging/Style MHL9838 MHL9236 MHL9236M MHL9318 MHL18336 (18)Tape 301AP/1 301AP/1 301AP/2 301AS/1 301AP/1 and Reel Packaging Options: a) R1 = 500 units. Ultra .5 3. and a device index. f) T1 = 1.5 36 3rd Order Intercept (Typ) dBm 50 47 47 49 46 NF (Typ) dB 3. tight phase and gain control.000 units.1 . and excellent group delay characteristics make these devices ideal for use in high.5 Supply Voltage Volts 26 27 28 28 Class System Application W−CDMA W−CDMA W−CDMA W−CDMA Die Technology LDMOS LDMOS LDMOS LDMOS Packaging/Style MHVIC2115R2 (18e) MHVIC2114R2 (18e)★ MW4IC2230MBR1 (18a) MW4IC2230GMBR1 (18a) AB AB AB AB 978/− 978/− 1329/− 1329A/− Base Station Module Drivers Designed for applications such as macrocell drivers and microcell output stage. b) R2 = 2. h) R1 = 1.order intercept point. Analog) — Class A (LDMOS Die) — Lateral MOSFETs Product Frequency Band MHz 800−925 800−960 800−960 860−900 1800−1900 VDD (Typ) Volts 28 26 26 28 26 IDD (Typ) mA 770 550 550 500 500 Gain (Typ) dB 31 30.5 30. o) R6 = 150 units. W.1 . c) T1 = 3.Linear (for CDMA.power feedforward loops.5 23. e) R2 = 1.1 .000 units. SG1009−21 SG1009Q42004 RF AMPLIFIER ICs AND MODULES . Their high third.500 units.7 3. Tape and Reel Specifications.5 17.5 30 Gain Flatness (Typ) dB .5 3.2 P1dB (Typ) dBm 39 34 34 35.7 Supply Voltage Volts 28 28 28 Class System Application N−CDMA PCS1900 W−CDMA Die Technology LDMOS LDMOS LDMOS Packaging/Style MHPA18010 MHPA19010 MHPA21010 AB AB AB 301AP/3 301AP/3 301AP/3 Base Station Module Pre−Drivers These 50 ohm amplifiers are recommended for modern multi. d) T3 = 10. p) R5 = 50 units. Product Frequency MHz 1805−1880 1930−1990 2110−2170 P1dB Watts 10 10 10 Gain (Min) dB 24. i) R3 = 250 units.000 units.000 units. Case Dimensions for all packages. g) R2 = 4. TDMA and UMTS base station pre.000 units. refer to SG46/D Wireless RF Product Selector Guide. n) R4 = 100 units.RF AMPLIFIER ICs AND MODULES (continued) Base Station IC Drivers (continued) Product Frequency MHz 2110−2170 2110−2170 2110−2170 2110−2170 P1dB Watts 15 15 30 30 Gain (Typ) dB 34 32 31.CDMA. j) T1 = 500 units. k) R2 = 450 units.tone CDMA.5 24.

000 units.4 29 31 Gain Flatness (Typ) dB . Wireless LAN Power Amplifiers — Class AB — GaAs HBT Product Frequency Band MHz 2400−2500 4900−5900 VCC (Typ) Volts 3. b) 4Q04. m) R2 = 2. e) R2 = 1. n) R4 = 100 units. SG1009−22 SG1009Q42004 .2 4.5 25 EVM (Typ)/Pout % rms/dBm 3/19 3/18 Packaging/Style MMG2401R2 (18e. Case Dimensions for all packages. h) R1 = 1.3 3.Linear (for CDMA. j) T1 = 500 units. i) R3 = 250 units.5 Packaging/Style MHL18926 MHL19338 MHL19926 MHL19936 MHL21336 301AY/1 301AP/1 301AY/1 301AY/1 301AP/1 WLAN POWER AMPLIFIERS These devices are optimized for wireless LAN (WLAN) applications.1 .15 P1dB (Typ) dBm 40 36 40 41 35 3rd Order Intercept (Typ) dBm 50 46 50 49.2 4. f) T1 = 1.2 .000 units.000 units.500 units. and a device index.3 . W.000 units.CDMA. (46)To be introduced: a) 3Q04. d) T3 = 10.3 Total Quiescent Current (Typ) mA 156 115 Itotal (Typ)/Pout mA/dBm 210/19 200/18 Gain (Typ)/Pout dB/dBm 27. k) R2 = 450 units. o) R6 = 150 units.6 30 29.2 4. p) R5 = 50 units.5/19 24/18 P1dB (Typ) dBm 26. c) 1Q05 For additional information on RF LDMOS High Power Transistor Products. refer to SG46/D Wireless RF Product Selector Guide.000 units.2 4. l) T1 = 5.3 . TDMA. (18)Tape and Reel Packaging 1483/− 1483/− Options: a) R1 = 500 units. g) R2 = 4.000 units. Analog) — Class A (LDMOS Die) — Lateral MOSFETs (continued) Product Frequency Band MHz 1805−1880 1900−2000 1930−1990 1900−2000 2110−2170 VDD (Typ) Volts 26 28 26 26 26 IDD (Typ) mA 1100 500 1000 1400 500 Gain (Typ) dB 28. b) R2 = 2. c) T1 = 3.5 45 NF (Typ) dB 4. Tape and Reel Specifications.500 units.46a) MMG5004 (9) (9)In development.RF AMPLIFIER ICs AND MODULES RF AMPLIFIER ICs AND MODULES (continued) Base Station Module Pre−Drivers (continued) Ultra .000 units.

c) T1 = 3. j) T1 = 500 units.5 40. (18)Tape and Reel Packaging 10−200 24 310 1.000 units.000 units. f) T1 = 1. l) T1 = 5. Case Dimensions for all packages.500 units.2 5 58 110 180 500 32 37.000 units.000 units.1 4. d) T3 = 10. i) R3 = 250 units. k) R2 = 450 units. p) R5 = 50 units.5 45* *@ 2140 MHz 1514/1 1514/1 1514/1 1543/− General Purpose Linear Amplifier Modules Product Frequency Band MHz Class A VCC (Typ) Volts Silicon Bipolar ICC (Typ) mA Gain (Typ) @ 100 MHz dB 34. General Purpose Linear Amplifier ICs Product Frequency Band MHz Class A InGaP HBT VCC (Typ) Volts ICC (Typ) mA Gain (Typ) @ 900 MHz dB 20 20 20 15* *@ 2140 MHz P1dB (Typ) @ 900 MHz dBm 18. n) R4 = 100 units. RF GENERAL PURPOSE LINEAR AMPLIFIER ICs AND MODULES SG1009−23 SG1009Q42004 .0 44 1302/1 Options: a) R1 = 500 units. (9)In development. h) R1 = 1. e) R2 = 1.000 units. g) R2 = 4.1 30* *@ 2140 MHz 3rd Order Intercept (Typ) dBm NF (Typ) @ 900 MHz dB 4. b) R2 = 2.000 units. Tape and Reel Specifications. m) R2 = 2.RF GENERAL PURPOSE LINEAR AMPLIFIER ICs AND MODULES These devices have been optimized for 50 ohm applications and are designed for multi−purpose applications where linearity and dynamic range are of primary concern. o) R6 = 150 units. refer to SG46/D Wireless RF Product Selector Guide.2 4 Packaging/Style MMG3001NT1 (18f)★ MMG3002NT1 (18f)★ MMG3003NT1 (18f)★ MMG3005(9) 40−3600 40−3600 40−3600 400−2400 5.6 5. and a device index.5 21 24. ★New Product For additional information on RF LDMOS High Power Transistor Products.8 Packaging/Style MHW1345 Note: Possible replacement for CA2830C.5 Gain Flatness (Typ) dB P1dB (Typ) @ 200 MHz dBm 28 3rd Order Intercept (Typ) dBm NF (Typ) @ 200 MHz dB 3.2 6.000 units.500 units.

5 (Typ) 1302/1 1302/1 ★New Product Order. These hybrids have been optimized to provide premium performance in all CATV systems up to 152 channels.3 132 112 +48 +48 −62(34) −64(34) −56 −58* *112 CH −55 −56* *112 CH 425 425 4. VCC = 24 Vdc.5 6.RF CATV DISTRIBUTION AMPLIFIER MODULES CATV DISTRIBUTION AMPLIFIER MODULES Freescale Semiconductor Hybrids are manufactured using the latest generation technology which has set new standards for CATV system performance and reliability.0 714Y/1 1302/1 40−870 MHz High Output Hybrids Product Hybrid Gain (Nom) @ 870 MHz dB VCC = 24 Vdc.5 8.5 1302/1 1302/1 1302/1 1302/1 1302/1 1302/1 20 20.8 27.9 132 132 132 132 132 132 +44 +44 +44 +44 +44 +44 −60(36) −60(36) −60(36) −59(36) −60(36) −60(36) −60 −58 −58 −57 −60 −60 −55 −52 −52 −51 −50 −53 245 250 250 245 255 250 5.5 20.2 152 152 +38 +38 −63(40) −61(40) −61 −58 −61 −59 210 318 7.0 4. Class A Product Hybrid Gain (Nom) @ 50 MHz dB Channel Loading Capacity Silicon Bipolar Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc 152 CH Cross Modulation dBc DC Current mA Typ Noise Figure @ 1000 MHz dB Packaging/ Style 152 CH Max Preamplifiers MHW9182B MHW9242A 18. Case Dimensions for all packages. FORWARD AMPLIFIER MODULES 40−1000 MHz Hybrids. SG1009−24 SG1009Q42004 . Class A Channel Loading Capacity GaAs Maximum Distortion Specifications 2nd Order Test dBc Composite Triple Beat dBc 132 CH Cross Modulation dBc DC Current mA Typ Noise Figure @ 870 MHz dB Packaging/ Style Output Level dBmV/CH 132 CH Max Preamplifiers MHW9146 MHW9186 MHW9186A★ MHW9206 MHW9236 MHW9276 Power Doublers MHW9187 MHW8188A★ (34)Composite 2nd (36)Composite 2nd (40)Composite 2nd 14.5 18. Tape and Reel Specifications. Vout = + 44 dBmV/ch Order. Vout = + 38 dBmV/ch For additional information on RF LDMOS High Power Transistor Products. Vout = + 48 dBmV/ch Order. refer to SG46/D Wireless RF Product Selector Guide. and a device index.2 23.5 4.0 6.5 6.3 18.5 23.5 5.

FORWARD AMPLIFIER MODULES (continued) 40−870 MHz High Output Hybrids VCC = 24 Vdc. Class A Product Hybrid Gain (Nom) @ 870 MHz dB Channel Loading Capacity GaAs (continued) Maximum Distortion Specifications 2nd Order Test dBc Composite Triple Beat dBc 132 CH Cross Modulation dBc 132 CH DC Current mA Typ Noise Figure @ 870 MHz dB Packaging/ Style Output Level dBmV/CH Max Power Doublers (continued) MHW9188 MHW9188A★ MHW9189(35) MHW9189A★ MHW8207A★ MHW9207A★ MHW8227A★ MHW9227 MHW9227A★ MHW8247A★ MHW9247 MHW9247A★ MHW8267A★ MHW9267 MHW9267A★ (34)Composite 2nd (35)Mirror image of 20.6 132 132 132 132 112 132 112 132 132 112 132 132 112 132 132 +48 +48 +48 +48 +48 +48 +48 +48 +48 +48 +48 +48 +48 +48 +48 −62(34) −62(34) −62(34) −62(34) −62(34) −62(34) −64(34) −62(34) −62(34) −62(34) −62(34) −62(34) −62(34) −60(34) −60(34) −56 −56 −56 −56 −57* −56 −58* −56 −56 −57* −56 −56 −57* −56 −56 *112 CH −55 −55 −55 −55 −55* −55 −56* −55 −55 −55* −54 −54 −55* −54 −54 *112 CH 425 425 425 425 425 425 425 425 425 440 440 440 440 440 440 4.0 6. Vout = + 48 dBmV/ch MHW9188 For additional information on RF LDMOS High Power Transistor Products.9 24.5 (Typ) 4.5 6.0 7. Case Dimensions for all packages.0 4. and a device index.0 4.3 20. refer to SG46/D Wireless RF Product Selector Guide.3 22.1 24.3 20.3 20.5 4.5 (Typ) 5.6 27.5 5.9 27.0 7.5 5.1 22. Tape and Reel Specifications.9 24.0 1302/1 1302/1 1302/2 1302/2 1302/2 1302/2 1302/1 1302/1 1302/1 1302/1 1302/1 1302/1 1302/1 1302/1 1302/1 ★New Product Order.3 21.3 21.0 4.1 22.0 (Typ) 7. SG1009−25 SG1009Q42004 RF CATV DISTRIBUTION AMPLIFIER MODULES .6 27.0 (Typ) 7.

e) R2 = 1.000 units. Tape and Reel Specifications.9 27. k) R2 = 450 units. f) T1 = 1.000 units. d) T3 = 10.0 6. g) R2 = 4. c) 1Q05 ★New Product For additional information on RF LDMOS High Power Transistor Products. Case Dimensions for all packages.3 35. h) R1 = 1. p) R5 = 50 units.0 7.0 978/ 40−870 MHz Hybrids.5 1302/1 1302/1 1302/1 1302/1 and Reel Packaging Options: a) R1 = 500 units. l) T1 = 5.000 units. and a device index. c) T1 = 3.5 128 128 128 132 +38 +38 +40 +44 −66(40) −64(40) −53(39) −44(36) −63 −64 −54 −46* *132 CH (18)Tape −62 −62 −56 −50* *132 CH 220 310 325 325 7.0 7.2 31. VCC = 24 Vdc.000 units. VCC = 24 Vdc.500 units.000 units. (36)Composite 2nd Order. j) T1 = 500 units.500 units. i) R3 = 250 units. V out = + 44 dBmV/ch (39)Composite 2nd Order.000 units. n) R4 = 100 units. V out = + 38 dBmV/ch (46)To be introduced: a) 3Q04. b) R2 = 2. refer to SG46/D Wireless RF Product Selector Guide. b) 4Q04.RF CATV DISTRIBUTION AMPLIFIER MODULES FORWARD AMPLIFIER MODULES (continued) 40−870 MHz High Output MMIC. o) R6 = 150 units. V out = + 40 dBmV/ch (40)Composite 2nd Order.000 units. m) R2 = 2.5 978/ 19 132 +44 −58 −56 −52 250 5. Class A Product Hybrid Gain (Nom) @ 870 MHz dB Channel Loading Capacity GaAs Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc 132 CH Cross Modulation dBc 132 CH DC Current mA Typ Noise Figure @ 870 MHz dB Packaging/ Style Max Preamplifiers MMG1001R2(18e) Power Doublers MMG2001R2(18e) 21 132 +48 −60 −54 −53 425 4. SG1009−26 SG1009Q42004 . Class A Product Hybrid Gain (Nom) @ 870 MHz dB Silicon Bipolar Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc 128 CH Cross Modulation dBc 128 CH DC Current mA Typ Noise Figure @ 870 MHz dB Packaging/ Style Channel Loading Capacity Max Preamplifiers MHW8202B MHW8272A MHW8312 (46b) MHW8342★ 20.

5* 8.5 21. Class A Product Hybrid Gain (Nom) @ 50 MHz dB Silicon Bipolar Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc 128 CH Cross Modulation FM = 55 MHz dBc 128 CH DC Current mA Typ Noise Figure @ 860 MHz dB Packaging/ Style Channel Loading Capacity Max Preamplifiers MHW8182B MHW8222B MHW8242A Power Doublers MHW8185L(21) MHW8185 MHW8205L(22) MHW8205 18.0 *@ 870 MHz 714Y/1 714Y/1 714Y/1 714Y/1 18.5 7. VCC = 24 Vdc. SG1009−27 SG1009Q42004 RF CATV DISTRIBUTION AMPLIFIER MODULES .9 24 128 128 128 +38 +38 +38 −64(40) −60(40) −62(40) −66 −64 −64 −65 −63 −62 220 220 318 7. Class A Product Hybrid Gain (Nom) @ 50 MHz dB Silicon Bipolar Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc 110 CH Cross Modulation FM = 55 MHz dBc 110 CH DC Current mA Typ Noise Figure @ 750 MHz dB Packaging/ Style Channel Loading Capacity Max Preamplifiers MHW7182B MHW7222B MHW7242A 18. Case Dimensions for all packages.0 8.0 714Y/1 1302/1 1302/1 (21)Low DC Current Version of MHW8185.5* 8. +40 +40 +40 −63(39) −60(39) −62(39) −66 −61 −63 −64 −60 −61 220 220 318 6.5 7.5 19. VCC = 24 Vdc.5 21.0 7.FORWARD AMPLIFIER MODULES (continued) 40−860 MHz Hybrids.5 714Y/1 1302/1 1302/1 40−750 MHz Hybrids. V = + 38 dBmV/ch out ★New Product For additional information on RF LDMOS High Power Transistor Products.9 24 110 110 110 Vdc = 24 V is 365 mA. Vdc = 24 V is 365 mA. Typical I CC @ (22)Low DC Current Version of MHW8205. Tape and Reel Specifications. refer to SG46/D Wireless RF Product Selector Guide. Typical I CC @ (39)Composite 2nd Order.8 128 128 128 128 +40 +40 +40 +40 −62(39) −62(39) −60(39) −60(39) −63 −64 −63 −63 −64 −64 −64 −64 365 400 365 400 8. and a device index. V = + 40 dBmV/ch out (40)Composite 2nd Order.5 18.8 19.5 6.

Class A Product Hybrid Gain ( ) (Nom) @ 50 MHz dB Silicon Bipolar Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc Cross Modulation FM = 55 MHz dBc 77 CH DC Current mA Typ T Noise Figure @ 550 MHz dB Packaging/ Style Channel Loading p y Capacity Max M 77 CH Forward Amplifiers MHW6342T 34. Class A Product Hybrid Gain (Nom) @ 50 MHz dB Silicon Bipolar (continued) Maximum Distortion Specifications Output Level dBmV/CH 2nd Order Test dBc Composite Triple Beat dBc 110 CH Cross Modulation FM = 55 MHz dBc 110 CH DC Current mA Typ Noise Figure @ 750 MHz dB Packaging/ Style Channel Loading Capacity Max Preamplifiers (continued) MHW7272A MHW7292A MHW7312 (46b) MHW7342 ★ 27. Case Dimensions for all packages.5 7.5 6. VCC = 24 Vdc.5 6. V out = + 44 dBmV/ch (39)Composite 2nd Order. VCC = 24 Vdc. c) 1Q05 ★New Product For additional information on RF LDMOS High Power Transistor Products.5 18.5 77 +44 −57(36) −57 −57 310 6. b) 4Q04.5 1302/1 (36)Composite 2nd Order.5 7. V out = + 40 dBmV/ch (45)Composite 2nd order. V out = + 42 dBmV/ch (46)To be introduced: a) 3Q04.3 34 110 110 112 112 +40 +40 +42 +44 −64(39) −60(39) −55(45) −50(36) −64 −60 −55* −50 *112 CH Power Doublers MHW7185CL MHW7185C MHW7205CL MHW7205C 18.5* 6.RF CATV DISTRIBUTION AMPLIFIER MODULES FORWARD AMPLIFIER MODULES (continued) 40−750 MHz Hybrids.0 *@ 770 MHz 1302/1 1302/1 1302/1 1302/1 40−550 MHz Hybrids. SG1009−28 SG1009Q42004 . Tape and Reel Specifications. and a device index.5 7.2 29 31.8 19. refer to SG46/D Wireless RF Product Selector Guide.5 714Y/1 714Y/1 714Y/1 714Y/1 −60 −60 −56* −53 *112 CH 310 310 325 325 6.5 19.8 110 110 110 110 +44 +44 +44 +44 −64(36) −64(36) −63(36) −63(36) −61 −62 −61 −61 −63 −63 −62 −62 370 400 365 400 7.

7 1302/1 1302/1 1302/1 MHW1223LA MHW1253LA MHW1303LA 6. refer to SG46/D Wireless RF Product Selector Guide. SG1009−29 SG1009Q42004 RF CATV DISTRIBUTION AMPLIFIER MODULES .0* *@ 200 MHz 1302/1 1302/1 MHW1244 MHW1346 ★ 22.10 6. Tape and Reel Specifications. and a device index. Class A Product Hybrid Gain (Nom) (N ) @ 10 MHz dB 24 35* *5 MHz Silicon Bipolar Channel Loading g Capacity C i Maximum Distortion Specifications Output Level Le el dBmV/CH dB V/CH 2nd Order Test T dBc −72(30) −72(31)* *22 CH Composite Triple Beat p dBc dB 22 CH −68 −68 26 CH −67.2 Channel Loading g Capacity C it Output Level dBmV/CH dB V/CH Silicon Bipolar Maximum Distortion Specifications 2nd Order Test dBc dB 6 CH 10 CH −65 6 CH −73 Composite Triple Beat p dBc dB 10 CH −62 Cross Modulation dBc 6 CH −63 10 CH −57 95 DC Current mA A Typ Noise Figure @ 150 MHz dB Packaging/ Style y Max 5. Composite Second 6.10 +50 −68 ★New Product Order Test For additional information on RF LDMOS High Power Transistor Products.10 6. Case Dimensions for all packages.10 +50 +50 +50 −68 −68 −68 Low Current Amplifiers Product 5−150 MHz Hybrids. 26 22.0 5.0 6. Class A Hybrid Gain (Nom) (N ) @ 5 MHz dB 35.5 5. VCC = 24 Vdc.7 25. Class A Hybrid Gain (Nom) (N ) @ 5 MHz dB 22. 26 +50 +50 Low Current Amplifiers Product 5−200 MHz Hybrids.5(19) −70(19) Cross Modulation dBc 22 CH −61 −60 26 CH −61(19) −63(19) 210 325 DC Current C rrent mA A Typ Noise Figure @ 175 MHz dB Packaging/ Style Style Max 5.4 1302/1 MHW1353LA (19)Typical (30)Channels 2 and A @ 7 (31)26 Ch. VCC = 24 Vdc.5 30.REVERSE AMPLIFIER MODULES 5−200 MHz Hybrids.8 Channel Loading g Capacity C it Output Level dBmV/CH dB V/CH Silicon Bipolar Maximum Distortion Specifications 2nd Order Test dBc dB 6 CH 10 CH −65 −66 −65 6 CH −75 −75 −74 Composite Triple Beat p dBc dB 10 CH −66 −66 −64 Cross Modulation dBc 6 CH −65 −65 −64 10 CH −60 −61 −58 95 95 95 DC Current mA A Typ Noise Figure @ 200 MHz dB Packaging/ Style y Max 7. VCC = 24 Vdc.

10 6.8 35. Case Dimensions for all packages.5 1302/1 MHW1254L (30)Channels 2 4 +50 and A @ 7 For additional information on RF LDMOS High Power Transistor Products.10 +50 +50 +50 +50 −68 −68 −68 −68 Low Current Amplifiers Product 5−50 MHz Hybrids. Class A Hybrid Gain (Nom) (N ) @ 5 MHz dB 25 Channel Loading g Capacity C i Output Level dBmV/CH dB V/CH Silicon Bipolar Maximum Distortion Specifications 2nd Order Test T 30) dBc −70 Composite Triple Beat p dBc dB 3 CH −70 Cross Modulation dBc 4 CH −62 115 DC Current mA A Typ Noise Figure @ 50 MHz dB Packaging/ Style y Max 4.0 6.5 5. and a device index.7 5.RF CATV DISTRIBUTION AMPLIFIER MODULES REVERSE AMPLIFIER MODULES (continued) Low Current Amplifiers Product 5−65 MHz Hybrids.10 6.7 25. refer to SG46/D Wireless RF Product Selector Guide. VCC = 24 Vdc. Class A Hybrid Gain (Nom) (N ) @ 5 MHz dB 22.4 1302/1 1302/1 1302/1 1302/1 MHW1224LA MHW1254LA MHW1304LA MHW1354LA 6.10 6. Tape and Reel Specifications.5 30.2 Channel Loading g Capacity C it Output Level dBmV/CH dB V/CH Silicon Bipolar Maximum Distortion Specifications 2nd Order Test dBc dB 6 CH 10 CH −65 −66 −65 −65 6 CH −75 −75 −74 −73 Composite Triple Beat p dBc dB 10 CH −66 −66 −64 −62 Cross Modulation dBc 6 CH −65 −65 −64 −63 10 CH −60 −61 −58 −57 95 95 95 95 DC Current mA A Typ Noise Figure @ 65 MHz dB Packaging/ Style y Max 7. VCC = 24 Vdc. SG1009−30 SG1009Q42004 .

and they offer low ESRs. the typical performance level expected (2% EVM. These application−specific reference designs show some of the many possible uses of our high power RF transistors. Freescale Semiconductor is pleased to offer application−specific reference designs. large−signal.). Layout. The circuit board is made of a recently developed ceramic loaded thermoset plastic woven glass material that offers very low material costs.) and some device features such as ESD protection and good thermal stability. yet of a reasonable value to make it relatively insensitive to fabrication and etching variations. APLAC Analog Design Tool 3. PCB and All Design Information Available Integral Temperature Compensated Bias Circuits Included Extensive RF Characterizations RF LDMOS MODELS Freescale Semiconductor continues to populate its LDMOS Model Library with the LDMOS MET models and with the LDMOS Root models. For more information and latest releases supported. refer to SG46/D Wireless RF Product Selector Guide.com/rf/models. and yet still has an exceptionally low dissipation factor giving low RF loss. The current release of the MET LDMOS model is available for these tools: 1. low PCB fabrication cost. the MET model is more accurate than existing models. Agilent EEsof ADS (UNIX and PC) nonlinear circuit simulator 2. For more information. SG1009−31 SG1009Q42004 RF DESIGN TOOLS . distributed element matching structures. the MET LDMOS model is capable of performing small−signal. Implemented in the Agilent EEsof EDA Advanced Design System.freescale. go to http://www. It is specifically tailored to model high power RF LDMOS transistors used in wireless base station applications. −40 dBc ACP.freescale. very high Q’s and tight capacitance value tolerances. Low−cost component selection was chosen so that the end users could transition the design and its entire Bill of Materials into a high volume base station manufacturing process and still be cost competitive with other competing technologies. Applied Wave Research Microwave Office 4. Case Dimensions for all packages. etc. Ansoft Serenade Design Environment 5.RF REFERENCE DESIGNS RF Power Reference Designs provide: • • • • • RF Performance Tuned for Specific Standard Broadcast Formats Low Cost Component Selection Complete BOM. Select Tools/Reference Designs. Because of its ability to simulate self−heating effects. noise and transient simulations. Applied Wave Research Microwave Office. The circuit’s matching and decoupling capacitors utilize a low−cost silicon dioxide dielectric process rather than the traditional porcelain multi−layered assemblies. For additional information on RF LDMOS High Power Transistor Products. Tape and Reel Specifications. go to http://www. W−CDMA. They provide the customer’s design engineers with a fast and accurate tool to both evaluate the performance envelope and fully characterize the devices under a variety of different operating conditions. Eagleware GENESYS Microwave and RF Design Suite The LDMOS Model Library is available for all major computer platforms supported by these simulators. Included on the data sheet are such basics as the intended end use application (GSM. APLAC Analog Design Tool. and Ansoft Serenade Design Environment and Eagleware GENESYS Microwave and RF Design Suite. The reference design data sheet contains a wealth of information that customers can use to better understand the range and capabilities of the Freescale devices. and a device index. etc. The dielectric constant of this material is high enough to allow for compact. The MET model for RF LDMOS transistors is a nonlinear model that examines both electrical and thermal phenomena and can account for dynamic self−heating effects of device performance. enabling circuit designers to predict prototype performance more accurately and reduce design cycle time.com/rf. harmonic−balance. All product models available in the RF LDMOS Model Library (Root and MET) include package. bond wire and internal matching network effects.

SG1009−32 SG1009Q42004 . Go to http://www. W−CDMA.freescale. Go to http://www. CDMA. ABOUT THE PROGRAM This program is designed for estimating LDMOS device electromigration failure rate. there are two wear−out modes for silicon components employing aluminum as a metallization material: • The formation of an electrically open circuit due to the condensation of vacancies in the aluminum to form voids. Freescale Semiconductor has taken the time to characterize specific reference design circuits in "software form. Additionally. refer to SG46/D Wireless RF Product Selector Guide. CDMA. These two pieces of the puzzle are excellent design tools. leaving the customer to figure out the best way to blend the two tools to their advantage. including GSM. MTTF CALCULATOR AVAILABILITY RF Power MTTF calculators are being added to the Freescale Semiconductor web site for all RF Power LDMOS discrete transistor and IC devices. The program evaluates LDMOS device Median−Time−To−Failure (MTTF) using Black’s Equations. TDMA Models provide examples of CW and 2−tone signal simulation Simulation files are provided royalty−free to allow for reuse and adaptation The device selection and applications are being continually updated Provides feedback path from customers to improve usability and accuracy of models RF POWER ELECTROMIGRATION MTTF CALCULATION PROGRAM PROGRAM FUNCTIONALITY This MTTF/FIT calculator software is designed to assist our customers in estimating the LDMOS device reliability in terms of electromigration wear−out failures. REFERENCE DESIGN SIMULATION AVAILABILITY The Reference Design Simulation circuits are available as downloadable Agilent ADS projects from the Freescale Semiconductor web site. Freescale Semiconductor has provided application−specific reference designs that are targeted to provide a pre−designed circuit suitable for a specific application. It also estimates the Failures−in−Time (FIT) value at the expected base station transceiver system (BTS) life span. specifically MET models. • The growth of etch−pits into silicon by the dissolution of silicon into aluminum (to short out an underlying junction). however. to facilitate design using Computer Aided Engineering (CAE) techniques. they are never linked to each other.com/rf and select Tools/Software Tools/Reference Design Simulations. These simulation files are provided royalty−free to allow for reuse and adaptation to other application requirements. and a device index. For additional information on RF LDMOS High Power Transistor Products. Case Dimensions for all packages.com/rf and select Tools/Software/Application Software/Calculators. Freescale has also provided modeling tools. The program also estimates the FIT value at the expected base BTS life span.freescale. drain currents. the user will also learn how to design an amplifier using microwave stripline matching techniques. W−CDMA and TDMA. Specifically. Reference Design Simulations are designed to provide the link between these two tools. A complete RF Power Electromigration MTTF Calculation Program library should be available by the end of 4Q04. TOOLS PROVIDED Reference Design Simulations provide an example application of MET models in a pre−designed application circuit. To provide the most accurate modeling results. 2−tone and modulated signals. as applicable. Tape and Reel Specifications.RF DESIGN TOOLS RF POWER REFERENCE DESIGN SIMULATIONS • • • • • • • • • Provides a link between Reference Designs and MET models Example designs exist for a wide selection of Freescale Semiconductor RF high power devices Demonstrates how to design an amplifier using microwave stripline techniques in the Agilent ADS environment Provides real−world" tutorial on how to use nonlinear models Example designs for all major applications: GSM. RF input/output power and expected BTS life. LEARNING TOOLS Reference Design Simulations provide examples of how to use nonlinear models of RF transistors. case temperature. The calculation requires input for the drain voltage. REFERENCE DESIGN SIMULATIONS In the past. each simulation provides examples for CW. According to electromigration theory." The simulations have been chosen to represent a wide selection of RF devices under many of the major communication standards.

refer to SG46/D Wireless RF Product Selector Guide. Case Dimensions for all packages. SG1009−33 SG1009Q42004 PACKAGING .RF Front End Integrated Circuit Packaging (Scale 1:1) Case 419B (SOT−363) Case 1345 (QFN−12) Case 1383 (7x7 Module) Case 1404 (SOT−343R) Case 1561 (6x6 Module) RF/IF Subsystems Packaging (Scale 1:1) Case 648 P Suffix (DIP−16) Case 751B D Suffix (SO−16) Case 751D DW Suffix (SO−20L) Case 751G DW Suffix (SO−16W) Case 1311 (QFN−32) Frequency Synthesis Packaging (Scale 1:1) Case 648 P Suffix (DIP−16) Case 751B D Suffix (SO−16) Case 751F DW Suffix (SO−28L) Case 751G DW Suffix (SO−16W) Case 948C DT Suffix (TSSOP−16) GPS Subsystem ICs Packaging (Scale 1:1) Transmitters and Receivers Packaging (Scale 1:1) Case 932 (LQFP−48) Case 751D (SO−20WB) Case 948G (TSSOP−14) Case 977 (LQFP−24) Case 873A (LQFP−32) RF Power Transistors Packaging (Scale 1:1) Case 318M (SOT−343) Case 360B Style 1 (NI−360) Case 360C Style 1 (NI−360S) Case 360D Style 1 (NI−360HF) Case 375B Style 1 (NI−860) Case 375D Style 1 (NI−1230) Case 375F Style 1 (NI−650) For additional information on RF LDMOS High Power Transistor Products. Tape and Reel Specifications. and a device index.

and a device index.5) Case 978 PLASTIC (PFP−16) Case 1264 Style 1 PLASTIC (TO−272−6 Wrap) Case 1264A Style 1 PLASTIC (TO−272−6) Case 1265 Style 1 PLASTIC (TO−270−2) Case 1329 Style 1 PLASTIC (TO−272 WB−16) Case 1329A Style 1 PLASTIC (TO−272 WB−16 Gull) Case 1337 Style 1 PLASTIC (TO−272−2) Case 1366 Style 1 PLASTIC (TO−272−8 Wrap) Case 1366A Style 1 PLASTIC (TO−272−8) Case 1484 Style 1 PLASTIC (TO−272 WB−4) Case 1486 Style 1 PLASTIC (TO−270 WB−4) Case 1490 Style 1 (HF−600) For additional information on RF LDMOS High Power Transistor Products.PACKAGING RF Power Transistors Packaging (Scale 1:1) (continued) Case 375G Style 1 (NI−860C3) Case 375H Style 1 (NI−860S) Case 458B Style 1 (NI−200S) Case 458C Style 1 (NI−200Z) Case 465 Style 1 (NI−780) Case 465A Style 1 (NI−780S) Case 465B Style 1 (NI−880) Case 465C Style 1 (NI−880S) Case 465D Style 1 (NI−600) Case 465E Style 1 (NI−400) Case 465F Style 1 (NI−400S) Case 466 Style 1 PLASTIC (PLD−1. Tape and Reel Specifications. SG1009−34 SG1009Q42004 . Case Dimensions for all packages. refer to SG46/D Wireless RF Product Selector Guide.

Case Dimensions for all packages.5) Case 978 PLASTIC (PFP−16) Case 1329 Style 1 PLASTIC (TO−272 WB−16) Case 1329A Style 1 PLASTIC (TO−272 WB−16 Gull) Case 1483 (QFN 3x3) Scale 2:1 RF General Purpose Linear Amplifier Modules Packaging RF CATV Distribution Amplifiers Packaging (Scale 1:2) Case 1302 Style 1 Scale 1:2 Case 1514 Style 1 (SOT−89) Scale 2:1 Case 1543 (PQFN 5x5) Scale 2:1 Case 714Y Style 1 Case 1302 Style 1. 2.RF Amplifier ICs and Modules Packaging (Scale 1:1) Case 301AP Style 1. SG1009−35 SG1009Q42004 PACKAGING . 2 For additional information on RF LDMOS High Power Transistor Products. and a device index. refer to SG46/D Wireless RF Product Selector Guide. 3 Case 301AS Style 1 Case 301AW Style 1 Case 301AY Style 1 Case 466 Style 1 PLASTIC (PLD−1. Tape and Reel Specifications.

market decline.What’s EOL? Freescale Semiconductor follows the industry standard EIA−724 Product Life Cycle Data Model" to track the life cycle of its product. change in technology roadmap.com/rf Wireless Infrastructure RF Products EOL For a current EOL listing of Wireless Infrastructure RF products and GPS products. Tape and Reel Specifications. This model tracks the product’s life cycle from Product Newly Introduced" to Product Phase Out." Products can be phased for a variety of reasons: improved product performance. refer to SG46/D Wireless RF Product Selector Guide. see the product listing below. When available. For a list of discontinued devices with possible alternative suppliers. and a device index. suggested possible replacement parts are listed. Product Not Recommended for New Design MHW1224 MHW1304L MRF18090ASR3 MRF19120 MRF19125SR3 End of Life CA2810C CA2830C CA2832C CA901 CA901A CA922 CA922A MHL8018 MHL8115 MHL8118 MHVIC1905R2 MHW1810−001 MHW1810−002 Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past MHW6342T MHW6342T None MHW8182B MHW8182B MHW8185 MHW8185 None None None MW4IC2020GMBR1 MW4IC2020MBR1 MW4IC2020MBR1 Last Order Date Last Ship Date Possible Replacement — — — — — — — — — — MHW1224LA MHW1304LA MRF18085ALSR3 MRF5S19130R3 MRF19125LR3 or MRF5S19130SR3 — Past Past — Past Past For additional information on RF LDMOS High Power Transistor Products. please contact your local Freescale sales office or authorized distributor. etc. process obsolescence. or visit the following URL: http://www.motorola. Case Dimensions for all packages. a suggested possible replacement device or an alternative source of supply for discontinued devices are made available when possible. When products are discontinued. SG1009−36 SG1009Q42004 .

SG1009−37 SG1009Q42004 . refer to SG46/D Wireless RF Product Selector Guide. Tape and Reel Specifications. and a device index.What’s EOL? (continued) Wireless Infrastructure RF Products EOL (continued) Product End of Life (continued) MHW1910−001 MHW5182A MHW5222A MHW6181 MHW6182 MHW6272 MHW7222A MHW7292 MHW8185LR MHW8185R MHW8205R MHW8292 MHW910 MHW916 MRF1507T1 MRF182 MRF182R1 MRF182LSR1 MRF182SR1 MRF183 MRF183R1 MRF183S MRF183SR1 MRF183LSR1 MRF184R1 MRF184LSR1 Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past MW4IC2020MBR1 MHW7182B None MHW7182B MHW7182B MHW7272A MHW7222B None None None None None MHVIC910HR2 None MRF1511T1 or MRF1517T1 MRF9030LR1 MRF9030LR1 MRF9030LSR1 MRF9030LSR1 MRF9045LR1 MRF9045LR1 MRF9045MR1 or MRF9045LSR1 MRF9045MR1 or MRF9045LSR1 MRF9045MR1 or MRF9045LSR1 MRF9060LR1 MRF9060LSR1 or MRF9060MR1 Last Order Date Last Ship Date Possible Replacement For additional information on RF LDMOS High Power Transistor Products. Case Dimensions for all packages.

SG1009−38 SG1009Q42004 .What’s EOL? (continued) Wireless Infrastructure RF Products EOL (continued) Product End of Life (continued) MRF185 MRF186 MRF187 MRF187S MRF187SR3 MRF1946 MRF1946A MRF18090AS MRF19120S MRF20030R MRF20060R MRF20060RS MRF21120S MRF21180S MRF247 MRF2628 MRF373 MRF373R1 MRF373S MRF184 MRF184SR1 MRF373LSR1 Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past Past MRF9080R3 MRF9120R3 MRF9085R3 MRF9085LSR3 MRF9085LSR3 MRF1535T1 MRF1535T1 MRF18085ALSR3 MRF5S19130SR3 MRF19030LR3 MRF19060R3 MRF19060R3 MRF21120R6 MRF21180R6 or MRF5P21180HR6 MRF1550T1 None MRF373ALR1 MRF373ALR1 MRF373ALSR1 MRF9060LR1 MRF9060LSR1 or MRF9060MR1 MRF373ALSR1 Last Order Date Last Ship Date Possible Replacement — Past Past Past Past — Past Past Past Past — Past Past Past Past Past Past Past Past — Past Past Past Past Past Past Past Past For additional information on RF LDMOS High Power Transistor Products. Tape and Reel Specifications. Case Dimensions for all packages. refer to SG46/D Wireless RF Product Selector Guide. and a device index.

NOTES SG1009–39 SG1009Q42004 .

Inc.. All rights reserved. Freescale Semiconductor makes no warranty. Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale. and expenses.How to Reach Us: Home Page: www. Technical Information Center 3-20-1. or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit. and reasonable attorney fees arising out of.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P. and specifically disclaims any and all liability. including “Typicals”. Minato-ku Tokyo 106-0047. Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd.com E-mail: support@freescale. and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center.japan@freescale. Box 5405 Denver.freescale. Buyer shall indemnify and hold Freescale Semiconductor and its officers. 2004.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products.com Japan: Freescale Semiconductor Japan Ltd. CH370 1300 N. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po. directly or indirectly. N. costs. including without limitation consequential or incidental damages. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application. any claim of personal injury or death associated with such unintended or unauthorized use. Freescale Semiconductor products are not designed. Inc.T. and distributors harmless against all claims. Minami-Azabu. Middle East. All other product or service names are the property of their respective owners. affiliates. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Alma School Road Chandler. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. subsidiaries. Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale. even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. or other applications intended to support or sustain life. All operating parameters. employees.asia@freescale. representation or guarantee regarding the suitability of its products for any particular purpose.com Europe. © Freescale Semiconductor. must be validated for each customer application by customer’s technical experts. or authorized for use as components in systems intended for surgical implant into the body. damages. intended. Hong Kong +800 2666 8080 support. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. Japan 0120 191014 or +81 3 3440 3569 support.O. SG1009Q42004 Rev 0 12/2004 . Colorado 80217 1-800-441-2447 or 303-675-2140 Fax: 303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.

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