You are on page 1of 9

Catalytic Reaction on Surface Lecturer: Dr. B. K.

Min

June 11st , 2012

Laras Wuri Dianningrum Muhammad Ridwan

Secondary Ion Mass Spectrometry
Introduction and Application

Introduction

: “Real surface analytical technique”

1. Able to detect elements present in the very wide range ions,isotopes,molecular compound (up to amino acid)

TOF-SIMS5

:
 New materials (composites, catalysts, polymers, etc.) Interfaces (metal/polymer, lubrication, etc.) Particle & trace analysis (environmental, soil, clinical analysis,etc.) Micro- & nanotechnologies

2. Mass resolution of 0.00x amu 3. Sub-micron imaging 4. High sensitivity for elements as well as for molecular species 5. Depth profiling capability

History
1949
First prototype experiments (Herzog, R. F. K., Viehboeck, F.)

1960’s
First instrument was developed

Static SIMS
• Surface monolayer analysis • Only very small fraction in the uppermost layer are sputtered • (Low current density) pulse ion beam • Time-of-flight mass spectrometer • Not destroyed the organic compounds

MAIN FOCUS
Thanks to Alfred Benninghoven and co-workers at Physikalisches Institut der Universitat Munster…

Dynamic SIMS
• Bulk analysis • Sputtering process • High current density primary ion beam • Magnetic sector of quadrupole mass spectrometer • Provide better counting statistics of trace elements • Destroyed organic compounds

1968-now
(TOF-SIMS)

Static

Reduced primary ion current density No significant sputtering of uppermost monolayer occurred

Quadrupole instruments Double focusing magnetic sector field TOF instruments Focused ion beams

Higher resolution Higher mass range Higher sensitivity

Principal

Instrumentation
SIMS consists of: 1. Primary ion gun Generating the primary ion beam 2. Primary ion column Accelerating and focusing the beam onto the sample 3. High vacuum sample chamber Holding the sample and the secondary ion extraction lens 4. Mass analyzer Separating the ions according to their mass to charge ratio 5. Flight path -Charles Evans TRIFT System -Cameca’s IonTOF system 6. Detector unit

Application

Strength&Weakness
1. 2. 3. 4. Surveys of all masses on material surfaces Elemental and chemical mapping on a sub-micron scale High mass resolution High sensitivity for trace elements or compounds

5. Depth profiling 6. Non-destructive analysis 7. Retrospective analysis

1. “Matrix Effect” 2. Not quantitative analyses (semi-quantitative at best) 3. Optical capabilities are typically limited 4. There is commonly an image shift when changing from positive to negative ion 5.
data collection mode Too much data

References
[1] A. Benninghoven, “Surface analysis by secondary ion mass spectrometry (SIMS)”, Surface Science 299/300, (1994) 246-260. [2] David W. Mogk, “Time –of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS)”, Montana State University. [3] http://www.iontof.com/products-tofsims5-IONTOF-TOF-SIMS-TIME-OF-FLIGHT-SURFACEANALYSIS.htm, (June 9, 2012) [4] Ge Xin, Gui Dong, Chen XU, Cha Liangzhen, O. Brox, A. Benninghoven; “TOF-SIMS depth profiling of SIMON”, Applied Surface Science 203-204, (2003) 441-444.