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Conduction in Semiconductors

Dec 6, 2014

Conduction in Semico

Electrical Conduction in
Good Conductors

Dec 6, 2014

Conduction in Semico

Drift Current
In addition to the random motion, the
electrons drift towards the positive terminal.
This drift of the charge carriers results in an
electric current, called drift current.

Dec 6, 2014

Conduction in Semico

Drift Velocity
It is the average velocity of charge carriers
in a definite direction under the influence
of electric field.
Its value depends upon
1. The nature of charge carriers.
2. The applied electric field.

Dec 6, 2014

Conduction in Semico

Mobility
The constant is called mobility.
It can be defined as the drift velocity (in
m/s) per unit applied field (in V/m). Thus,

Dec 6, 2014

Conduction in Semico

Conductivity

Dec 6, 2014

Conduction in Semico

Let n be the concentration of charge carriers.


The time to cross the length is
t = L / vd
The drift current is given as

The current Density is

Dec 6, 2014

Conduction in Semico

Putting = qn, we get


J = E
This is simply Ohms Law, put in another
form. The constant is called Conductivity.
Conductivity is the inverse of resistivity,
= 1 / (S/m)

Dec 6, 2014

Conduction in Semico

Conduction in
Intrinsic Semiconductors

Dec 6, 2014

Conduction in Semico

Drift of electrons and holes in an


external field
The electrons in the conduction band and the holes
in the valence band move in a random fashion
within a crystal due to their thermal energy.
When an external voltage is applied to the
semiconductor, a drift velocity is superimposed on
the random thermal motion of the electrons and
holes.
The drift of the electrons in the conduction band
and that of the holes in the valence band produce
an electric current.
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The electrons move towards the positive


electrode and the holes towards the negative
electrode.
Conventional
current
flows
in
semiconductors from the positive electrode
to the negative electrode.
When the charge on an electron is same as
the charge on a hole, why is the electrondrift current In is greater than the hole-drift
current Ip ?
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Conduction in Semico

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Conductivity of
Intrinsic Semiconductors

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Charge density = qn
Qn = (qn)(Avn)

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Total Current,

But

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Applying Ohms Law,

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Since in an intrinsic semiconductor, n = p = ni,

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Intrinsic Concentration
With increasing temperature, the density of
electron-hole pairs increases and correspondingly
conductivity increases.
It is found that intrinsic concentration ni varies with
T as,
E

ni A0T exp G 0
kT

EG0 = Energy gap at 0 K in electron volts


k
= Boltzman constant in eV/K
A0
= a constant independent of T.
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In case Germanium, 1 atom in about 10 9


contributes a free electron (and also a hole).
In case Silicon, 1 atom in about 10 12
contributes a free electron (and also a hole).

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Energy Gap or Band Gap


The
forbidden
energy
gap
in
semiconductors depends upon temperature.
Experimentally it has been found that,
For Germanium,
Eg = 0.785 2.23 X 10-4T
At 300 K,
Eg = 0.72 eV.
For Silicon,
Eg = 1.21 - 3.60 X 10-4T
At 300 K,
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Eg = 1.12 eV.
Conduction in Semico

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Review

Electrical Conduction in Good Conductors


Drift Current.
Drift Velocity.
Mobility.
Conductivity.
Conductivity of Intrinsic Semiconductors .
Intrinsic Concentration.

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