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EC238 Electronics I

Lecture 2

Lecture 7

Metal Oxide Semiconductor Field


Effect Transistor (MOSFET)

Agenda

Structure of MOSFET (Metal Oxide Semi


Conductor Field Effect Transistor).

Operation of MOSFET

http://groups.yahoo.com/group/EC332DevicesII2011/files/
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The Practical MOSFET Structure

n-channel MOSFET
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3-Dimention View

n-channel MOSFET

MOSFET also called Insulator-gate


FET (IGFET)

3-Dimention View

Typical dimensions of todays MOSFETs.

MOSFET Symbols

n-channel MOSFET

p-channel MOSFET
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MOSFET Modes
MOSFET Modes

Enhancement Mode
VGS = 0
no
channel
n-channel

Depletion Mode
VGS = 0
there is a channel

p-channel

Enhancement-Type n-Channel MOSFET


I. VGS 0
two back-to-back diodes
exist in series between drain and
source.
. Total

charge

Q = CG V = CG ( VGS

Vt).
. No current conduct between drain and
source.

Enhancement-Type n-Channel MOSFET


II. 0 VGS Vt & VD = 0
.The

positive charge on the gate repels the


holes in the substrate.
.Depletion region is created ( p= n).
Note
VB= 0

Enhancement-Type n-Channel MOSFET


(cont.)
III. VGS Vt

& VDS = 0

.Inversion

layer is created (drain and source are


connected through a channel)
.Transistor is ON.
Note
VB= 0

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Enhancement-Type n-Channel MOSFET


(cont.)
IV. VGS Vt

& small VDS

linear region

Channel electric field E


iS= iD

iG=0
+

VDS

iD

L
Transistor operates in linear (deep triode region ) VDS<< 2 (VGS-Vth)
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Enhancement-Type n-Channel
MOSFET (cont.)
V. VGS Vt

& large VDS

Triode region

EG Decreased

ED Decreased

VDS < VGS-Vth


Electronic Devices II EC332

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Enhancement-Type n-Channel
MOSFET (cont.)
V. VGS Vt

& large VDS


VDSsat = VGS-Vth

Pinch of

Theoretical operation

Pinch of

L
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Electronic Devices 2

The n-Channel MOSFET


Drain (Output) Characteristics
locus of saturation onset IDS=(kW/2L)VDSsat2

voltage-controlled
current-source
voltage-controlled
resistance

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Vt=1V

Electronic Devices 2

3/12/15

The n-Channel MOSFET


Saturation Transfer Characteristics
C ox W
IDS
( VGS Vt ) 2
2 L

Independent
of VDS
(ideally)

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Vt=1V

Electronic Devices 2

3/12/15

The p-Channel MOSFET

Motion direction of carriers and


current

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The p-Channel MOSFET


3 Dimension

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The p-Channel MOSFET


VGS Vth or VSG Vth
VDS VGS - Vth
I DS p C ox

W
L

(VGS

VDS VGS - Vth


I DS p

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Channel Induced
Triode region

VDS
Vt )VDS

Saturation region

C ox W
(1 v DS )(VGS Vt ) 2
2 L

For pMOS Vth


is negative

Comparison between nMOS and pMOS


Transfer Characteristics
_

ISD

IDS

pMOS

+
+
kp= pCox
Vtp
_

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kn= nCox
nMOS
Vtn

p = 0.5 to 0.4 n
All characteristic equations are the same
but with appropriate
voltage 3/12/15
polarities
Electronic Devices 2

Comparison between nMOS and pMOS


Drain Characteristics
ISD

IDS

(W/L)p > (W/L)n


VGS (-ve)

VGS (+ve)

pMOS
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nMOS
Electronic Devices 2

3/12/15

Comparison between nMOS and pMOS


Drain Characteristics
MODE

n-channel MOSFET

p-channel MOSFET

VGS < Vth

VGS > Vth


|VGS|< |Vth|

Channel
enhancement

VGS Vth

VGS Vth
|VGS| |Vth|

Triode

VDS < VGS-Vth

VDS >VGS-Vth

Saturation

VDS VGS-Vth

Cut-of

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VDS VGS-Vth