P-N Junction (Diode)

Lecture-2

Outline
About PN Diode
PN Junction Formation
PN Junction Realization
Barrier height
Thermal equilibrium
Equilibrium
Depletion Approximation
Abrupt junction
PN Junction Bias

Applications
2

pn
The most
device:

junction (Diode)
important

and

commercial

Contains a p-type and an n-type region in a

closed boundary.

Typically p-n junction is also known

as DIODE

P-N Junction Formation

P-N junction can be formed by p-type
semiconductor into close contact with
n-type semiconductor.
But formation is not simple because;

1) Very few points of contact which may restrict the

current flow (need a large surface area of the
junction)

2) Native oxide is an issue in case of Si to prevent

current flow.
3) Bonding arrangement is interrupted
surface due dangling bonds.

at

the

Surface States
To overcome these surface states
problems

p-n junction can be formed in the bulk

of the semiconductor, away from the
surface as much as possible.

Formation of P N Junction
p-type

n-type

EC

EC
Ef

Ef
EV

EV

EC
E

p-type

n-type

EC
Ef
E

Ef
EV

EV

* There is a big discontinuity in the fermi level accross the

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p-n junction

PN Junction Energy level in Thermal Equilibrium

p-type

n-type

Electron Drift

EC

Electron Diffusion
Neutral p-region

EC
Ef

Ef
EV
Hole Diffussion

Neutral n-region

EV

Hole Drift

Depletion region
7

Block Diagram of PN Junction

Hole
Movement

n-type

+++++
+++++
+++++
+++++
+++++
+++++
+++++
+++++

Electron
Movement

---------------------------------

p-type

Metallurgi
cal
junction

Idealized P-N Junction

Holes diffuse to the left and combine with the
electrons on that side. They leave behind
negatively charged acceptors
Similarly, electrons diffusing to the right will
leave behind positively charged donors. This
diffusion process can not go on forever due to
some equlibrium will reached.
The fixed charges on both side produces an
electric field which slows down the diffusion
process.
The fixed charge region is known as depletion/
9
space charge region and this region is depleted

Thermal Equilibrium
J p J p (drift ) J p (diffusion) 0 (1)
A
J p is the hole current density ( 2 )
cm
dp
J p q p pEx qD p
0 (2)
dx
where
1 dEi
Ex
q dx

p kT
Dp
q

Drift current is due to

electric field at
the
junction;
minority
carriers.
Diffusion current
is due the to
concentration
gradient; majority
carriers.

( Einstein relation)

10

Thermal Equilibrium
Drift and diffusion currents are flowing all time.
But, in thermal equilibrium, the net current flow
is zero since currents oppose each other.
Under non-equilibrium condition, one of the
current flow mechanism is going to dominate over
the other, resulting a net current flow.
The electrons that want to diffuse from the ntype layoer to p-layer have potential barier.

11

Barrier Height,
Vbi
Vbi
The potential barrier height
accross
a p-n junction
is known as the built-in potential and as the junction
potential.
The potential energy that this potential barrier correspond is

qVbi
Electron energy is positive upwards in the energy
level diagrams, so electron potentials are going to
be measured positive downwards.
The hole energies and potentials are of course
positive in the opposite directions to the electrons
12

Barrier Height
p-type

n-type

EC

Ef

qV p
qVn

EV

EC
Ef
Ei
EV

Depletion region
13

Electron potential

Electron energy

Ei

qVbi

Barrier Height Calculation

The intrinsic Fermi Level is a very useful reference level in a
semiconductor.

qV p ( Ei E f ) (1)
Vp

kT
NA

ln
q
ni

Ei E f
p ni exp

kT

(2)

Similarly for Vn
Vn

kT
ND

ln
q
ni

(3)

For full ionization, the built in voltage is a sum of

kT
N AND
Vbi Vn V p
ln
(4)
2
q
ni
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Built-in Potential
When electrons and holes are diffusing from high
concentration to the low concentration region they
both have a potential barrier. However, in drift case
of minority carriers there is no potential barrier.

Built in potential;

kT
N AND
Vbi
ln
2
q
ni
At fixed T , Vbi is determined by the number of N A and N D atoms.
15

Thermal Equilibrium
DR

Neutral
p-region

Current Mechanisms

----

+++

----

+++

----

+++

Neutral

Diffusion
of
the
carriers
cause
an
electric field in DR.

n-region
Field Direction

Hole energuy

Electron energy

Electron Drift
Electron Diffusion

EC

Drift current is due to

the
presence
of
electric field in DR.

Ef

Hole Diffussion

EV

Hole Drift

Diffusion current is
due to the majority
carriers.
Drift current is due to
the minority carriers.
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N P Junction Equilibrium
DR

Neutral

+++

----

n-region

+++

----

Neutral
p-region

Electron Drift

Hole energy

Electron energy

+++
---Field Direction

Electron Diffusion

EC

Ef
EV
Hole Diffussion

Hole Drift
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Depletion Approximation
The charge distribution tails-off into the neutral
regions, i.e. the charge distrubition is not abrupt if
one goes from depletion region into the neutral
region.
This region is called as a transition region and it is
very thin, one can ignore the tail-off region and
consider the change being abrupt. So this
approximation
is
called
as
DEPLETION
APPROXIMATION.

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p-type

----

+++

----

+++

At
equilibrium,
there is no bias, i.e.
no applied voltage.

n-type

+++

lectric field

Charge

Depletion Approximation

----

+++

area Vbi

----

qVbi
density

Potential

Em

xn

xp

Depletion

The field takes the

same sign as the
charge
The sign of the
electric
field
is
opposite to that of
the potential ;

dVn
Ev
dx

19

Depletion Approximation
Charge density is negative on p-side and positive on n-side.
Abrupt changes occur at the depletion region (DR)
edges. Such a junction is called as an abrupt junction
since the doping abruptly changes from p- to n-type at the
metallurgical junction (ideal case).

xn the width of the DR on n-side

x p the width of the DR on p-side

20

Depletion Approximation,
Electric Field Diagram:
The electric field is zero at the edge of the DR
and increases in negative direction.
o At junction charge changes its sign so do electric field
and the magnitude of the field decreases (it increases
positively).

Potential Diagram:
Since the electric field is negative through the
whole depletion region ,DR, the potential will
be positive through the DR.
The potential increases slowly at left hand side but it
increases rapidly on the right hand side.
So the rate of increase of the potential is different an
both sides of the metallurgical junction. This is due to
the change of sign of charge at the junction.
21

Abrupt Junction

Charge density

p-type

----

+++

----

+++

n-type

+++
x

+++

----

N A x p N D xn

----

xp
Depletion
Region

The amount of uncovered

negative charge on the left
hand side of the junction
must be equal to the
amount of positive charge
on the right hand side of the
metalurgical
junction.
Overall
space-charge
neutrality condition;

xn

The higher doped side of the junction has

the narrower depletion width

when N A N D xn x p
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Abrupt Junction
xn and xp is the width of the depletion layer on the n-side
and p-side of the junction, respectively.

When N D N A (unequal impurity concentrations)

and

x p xn , W x p

Unequal impurity concentration results an unequal

depletion layer widths by means of the charge neutrality
condition;

N A . x p N D . xn
W = total depletion
region
23

Abrupt Junction

When N A N D xn x p

W xn

Depletion layer widths for n-side and p-side

1
xn
ND

2 SiVbi N A N D
q( N A N D )

1
xp
NA

2 SiVbi N A N D
q( N A N D )
24

Abrupt Junction
For equal doping densities W xn x p
Total depletion layer width , W
1
1
W (

)
NA
ND

2 SiVbi N A N D
q( N A N D )

2 SiVbi ( N A N D )
qN A N D
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P-N Junction Bias

When a voltage is applied to a diode , bands move and the
behaviour of the bands with applied forward and reverse fields.

forward bias

reverse bias

How current flows through the pn junction when a bias (voltage)

is applied.
The current flows all the time
whenever a voltage source is
connected to the diode. But the
current flows rapidly in forward
bias, however a very small
constant current flows in
reverse bias case.
26

P-N Junction Forward Bias

Junction potential reduced.
Enhanced hole diffusion from p-side
to
n-side
compared
with
the
equilibrium case.
Enhanced electron diffusion from nside to p-side compared with the
equilibrium case.
Drift current flow is similar to the
equilibrium case.

VF forward voltage

Overall, a large diffusion current is able to flow.

Connect positive terminal to p-side for forward bias

The difference between energy bands across the

depletion region is reduced. The electric field is
also reduced.
27

P-N Junction Reverse Bias

Junction potential increased.
Reduced hole diffusion from p-side
to

n-side

compared

with

VR reverse voltage

the

equilibrium case.
Reduced electron diffusion from nside to p-side compared with the
equilibrium case
Drift current flow is similar to the
equilibrium case.
Overall a very small reverse saturation current flows.
Connect positive terminal to n-side for reverse bias

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Ideal Diode Equation

Dn n po

J Total q

Ln

D p pno

qV
qV

exp
1 J o exp
1
L p
kT
kT

multiplying by area ;

qV
I I o exp

1

kT

Ideal diode equation

* This equation is valid for both forward and reverse biases; just change
the sign of V.
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Diode Curve

Change V with V for reverse bias. When qV > a few kT;

exponential term goes to zero as

qV
I I o exp
1
kT

I Io

Reverse saturation current

Current
Forward Bias
VB

I0

Voltage
VB ; Breakdown voltage

Reverse Bias

I0 ; Reverse saturation current

30

Non-ideal P-N Curve

Characteristics

31

Junction or Reverse
Breakdown

An applied reverse bias (voltage) will result in a small

current to flow through the device.
At a particular high voltage value, which is called as
breakdown voltage VB, large currents start to flow. If
there is no current limiting resistor which is connected in
series to the diode, the diode will be destroyed. There are
two physical effects which cause this breakdown.

1) Zener breakdown is observed in highly doped

p-n junctions and occurs for voltages of about 5
V or less.
2) Avalanche breakdown is observed in less
highly doped p-n junctions.
32

Zener Breakdown
Zener breakdown occurs at highly doped p-n
junctions with a tunneling mechanism.

In a highly doped p-n junction the conduction

and valance bands on opposite side of the junction
become so close during the reverse-bias that the
electrons on the p-side can tunnel from directly VB
into the CB on the n-side.

33

Avalanche Breakdown
Avalanche breakdown mechanism occurs when
electrons and holes moving through the DR and
acquire sufficient energy from the electric field to
break a bond i.e. create electron-hole pairs
by colliding with atomic electrons within the
depletion region.
The newly created electrons and holes move in
opposite directions due to the electric field and
thereby add to the existing reverse bias
current. This is the most important
breakdown mechanism in p-n junction.

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Example -1

Solution:
Law of the
junction

n is constant as it represents the majority carriers, it is

also equal to Nd

35

Example -2

Solution:

(1
)

36

Example -2
Solution

(cont):

Law of mass action

Nc and Nv is not much depends

on temperature

E g = 1.12
eV
VA1 = 0.60

37

Example -3

3. What can be said about the relative magnitudes of the two current densities?

38

Example -3

39

Example -3

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Diode- Applications
Photodiode

41

Diode- Applications
LED- ligth emitting diode

42

Diode- Applications
Varactor/variable
diode

capacitance

43

Diode Types

Thank you!

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