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®

Monte Carlo Simulation
in Statistical Design Kit

®

Monte Carlo simulation in statistical design kit

Overview
1. Monte Carlo Simulation
2. Practical demonstration in Cadence
3. Simulation and Measurement

®

Monte Carlo simulation in statistical design kit

Monte Carlo Simulation
... allows the random variation of
- process parameters
- mismatch parameters
- process & mismatch parameters

®

Monte Carlo simulation in statistical design kit

Monte Carlo process simulation
Wafer production will
always show some
variation of technological parameters
The MC process
simulation is the
adequate tool to give
an early estimation
how it will affect the
circuits function.

.® Monte Carlo simulation in statistical design kit Monte Carlo process simulation For each simulation run a new random set of process parameters is generated and is valid for all active and passive components in the circuit       . dw_rpyhl_skew rcs_rpyhl_skew rsh_rpyhl_skew a_wc_skew_nsic a_be0_skew_nsic r_nsu_skew_nsic r_nbl_skew_nsic r_ncx_skew_nsic r_nci_skew_nsic r_wb_skew_nsic r_jbei_skew_nsi c r_nbei_skew_nsi c        ... ..

® Monte Carlo simulation in statistical design kit Monte Carlo mismatch simulation Even optimum layout cannot completely avoid mismatch between components. . The MC mismatch analysis gives insight in the effect of these slight variations.

® Monte Carlo simulation in statistical design kit Monte Carlo mismatch simulation For each device an individual mismatch random variable is generated and is valid only for a single run. The mismatch property can be set globally or for selected devices only. .

This combined simulation will give an estimation of a real wafer fabrication .® Monte Carlo simulation in statistical design kit Monte Carlo process & mismatch simulation In addition to the global random process parameter set each device gets an individual mismatch random variable.

® Monte Carlo simulation in statistical design kit Monte Carlo Tool Demonstration .

® Monte Carlo simulation in statistical design kit Testbench .

® Monte Carlo simulation in statistical design kit Operational Amplifier V1 .

® Monte Carlo simulation in statistical design kit Opamp V1 Mismatch and Process Variation .

® Monte Carlo simulation in statistical design kit Sweep of Process Parameter Model Setup .

® Monte Carlo simulation in statistical design kit Sweep of Process Parameter Model Setup .

® Monte Carlo simulation in statistical design kit Variation of Process Parameter with Corner Tool .

® Monte Carlo simulation in statistical design kit Variation of Process Parameter with Corner Tool .

® Monte Carlo simulation in statistical design kit Sweep of Process Parameter .

® Monte Carlo simulation in statistical design kit Opamp V1 Mismatch and Process Variation .

® Monte Carlo simulation in statistical design kit Circuit optimisation Step 1: Add base current compensation .

® Monte Carlo simulation in statistical design kit Circuit optimisation Step 1 .

® Monte Carlo simulation in statistical design kit Circuit optimisation Step 2: Add buffer stage .

® Monte Carlo simulation in statistical design kit Circuit optimisation Step 2 .

® Monte Carlo simulation in statistical design kit Circuit optimisation Step 3: Adjust bias current and add cascode stage .

® Monte Carlo simulation in statistical design kit Circuit optimisation Step 3 .

® Monte Carlo simulation in statistical design kit Improvement in DC-Offset .

94mV after optimisation 1.16mV .16 0.® Monte Carlo simulation in statistical design kit Overview DC-Offset N = 1000 simulation runs Simulation MM Proc MM&Proc before optimisation 3.77 24.09 1.82 22.

MC Simulation with individual mismatch enable .sweep of single process parameters .® Monte Carlo simulation in statistical design kit Identify critical components and process parameters .Perform correlation check after process simulation in Monte Carlo Tool .Run sensitivity analysis .

add base current compensation .add cascode or buffer stage .: .g.® Monte Carlo simulation in statistical design kit Rules of thumb for Design Wide spread at Mismatch Simulation: -> Increase area factor of critical components Wide spread at Process Simulation: -> Check circuit topology e.

® Monte Carlo simulation in statistical design kit Simulation and Measurement .

® Monte Carlo simulation in statistical design kit Circuit Topology .

® Monte Carlo simulation in statistical design kit First approach to DC-Offset compensation with dummy stage .

20mV First silicon : ~ 40mV (1-sigma) .® Monte Carlo simulation in statistical design kit Results from first Silicon First silicon of a test circuit did show a wide spreading of DC offsets especially in high gain mode. The yield was unacceptable low : DC offset voltages Specification: +/.

® Monte Carlo simulation in statistical design kit Typical DC Offset Distribution (Wafer probing) 1-Sigma 38.7mV .

® Monte Carlo simulation in statistical design kit Resimulation: Mismatch & Process Variation .

Monte Carlo Analysis with new statistical design kit provides a fast insight in the circuits behaviour at mismatch and process variation.but takes a lot of time. The conformity of measurement and simulation is rather good .® Monte Carlo simulation in statistical design kit Redesign Evaluation of the circuit without statistical models is possible .

® Monte Carlo simulation in statistical design kit Circuit improvements .limit influence of early effect by cascode stages and dummy amps .enlarge area factor at critical elements .decrease current of differential amplifier to limit influence of beta variation .revise the complete channel topology and gain chain (omit dummy OP stage) .add base current compensation .

® Monte Carlo simulation in statistical design kit Redesign without dummy stage but OP design improved .

® Monte Carlo simulation in statistical design kit New Design: Mismatch & Process Variation .

6 New Design 6.9mV ? .7mV 0.3 Proc MM&Proc Wafer 32.9mV 38.8 5.9 32.® Monte Carlo simulation in statistical design kit Overview DC Offset @ Opamp output (300 simulation runs) Simulation Measurement MM First Design 13.

H.and Physics-Based Statistical BJT Modeling Using HICUM and TRADICA.. Proc. BCTM. pp 54 . W. Wittkopf. 6th HICUM Workshop. M. Kraus. 2006 [2] Schröter. : PCM.. : Statistical modeling of high-frequency bipolar transistors.61. 2005 .Monte Carlo simulation in statistical design kit ® More Information [1] Kraus. W.