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Operation of MOSFET

NMOS and PMOS

For NMOS,

VGS > VTN

VDS sat = VGS VTN

For PMOS

VSG > |VTP|

VSD sat = VSG + VTP

Electronics

ID versus VDS (NMOS) or ID versus VSD

(PMOS)

Electronics

NMOS PMOS

o VTN is POSITIVE o VTP is NEGATIVE

o VGS > VTN to o VSG > |VTP| to turn

turn on on

o Triode/non- o Triode/non-

saturation region saturation region

Electronics

DC analysis of FET

Electronics

MOSFET DC Circuit Analysis

- NMOS

The source terminal is

at ground and common

to both input and output

portions of the circuit.

The CC acts as an open

circuit to dc but it allows

the signal voltage to the

gate of the MOSFET.

In the DC equivalent circuit, the gate current into the transistor is

zero, the voltage at the gate is given by a voltage divider principle:

VG = VTH = R2 VDD

R1 + R2

Use KVL at GS loop:

VGS VTH + 0 = 0

Electronics VGS = VTH

MOSFET DC Circuit Analysis

- NMOS

1. Calculate the value of V GS

region, the drain current:

IDRD + VDS VDD = 0

If VDS > VDS(sat) = VGS VTN, then the transistor is biased in the

saturation region. If VDS < VDS(sat), then the transistor is biased in the

Electronics non-saturation region.

EXAMPLE:

Calculate the drain current and drain to source voltage of a common source

circuit with an n-channel enhancement mode MOSFET. Assume that R1 = 30

k, R2 = 20 k, RD = 20 k, VDD = 5V, VTN = 1V and Kn = 0.1 mA/V2

30 + 20

VDSsat = VGS VTN = 2 1 = 1V, so, VDS > VDSsat, our assumption

that the transistor is in saturation region is correct

Electronics

EXAMPLE

VDD =

10V

The transistor has

parameters VTN = 2V and

R1 = RD =

Kn = 0.25mA/V2. 10k

280k

Find ID and VDS

R2 =

160k

Electronics

Solution

1. VTH = 160 10 =

3.636 V 160 + 280

KVL at GS loop: VGS VTH + 0 = 0 VGS =

V

2. TH

Assume in saturation mode:

ID = Kn(VGS - VTN)2

So, ID = 0.669 mA

So, VDS > VDSsat , therefore, assumption is correct!

Electronics

MOSFET DC Circuit Analysis -

PMOS

Different notation:

VSG and VSD

Threshold Voltage = VTP

VG = VTH = R2 VDD

R1 + R2

VSG + 0 + VTH VDD = 0

VSG = VDD - VTH

Electronics

MOSFET DC Circuit Analysis

- PMOS

Assume the transistor is biased in the saturation

region, the drain current:

ID = Kp (VSG + VTP)2

Calculate VSD:

Use KVL at DS loop:

VSD + IDRD - VDD = 0

VSD = VDD - IDRD

If VSD > VSD(sat) = VSG + VTP, then the transistor is biased in the

saturation region.

If VSD < VSD(sat), then the transistor is biased in the non-saturation

region.

Electronics

Calculate the drain current and source to drain voltage of a common

source circuit with an p-channel enhancement mode MOSFET.

Also find the power dissipation.

Assume that, VTP = -1.1V and Kp = 0.3 mA/V2

5V

Use KVL at SG loop:

VSG + 0 +2.5 5 = 0

VSG = 5 2.5 = 2.5 V

50 k

VSG > |VTP |

50 k

7.5 k

Calculate VSD

VSD + IDRD 5 = 0

VSD = 5 - IDRD

Electronics

VSD = 5 0.5888 ( 7.5) = 0.584 V

VSD sat = VSG + VTP = 2.5 1.1 = 1.4V

Hence, VSD < VSD sat. Therefore assumption is

incorrect. The transistor is in non-saturation mode!

ID = 0.536 mA

ID = 0.365

Electronics mA

56.25 I 2

50.67 I + 11 = 0

ID = 0.536 mA ID = 0.365

mA

Smaller than VSD sat : OK! Bigger than VSD sat : not OK

Electronics

LOAD LINE

Common source configuration i.e

source is grounded.

It is the linear equation of ID versus VDS

Use KVL

VDS = VDD IDRD

ID = -VDS + VDD

RD RD

Electronics

ID (mA)

y-

intercept

Q-

ID POINTS VGS

VDS (V)

VDS x-

intercept

Electronics

DC Analysis where source is NOT GROUNDED

For the NMOS transistor in the circuit below, the parameters are V TN =

1V and Kn=0.5mA/V2.

Electronics

1. Get an expression for VGS in terms of ID

use KVL:

0 + VGS+ 1(ID) -5 +1

=0

VGS = 4 - ID

2. Assume in saturation

ID 8ID + 9 = 0

2 Replace in VGS =

mA VGS 2.646 V

ID = 6.646 equation VGS= -2.

mA VGS = 4 - ID 646 V

Why choose VGS = 2.646 V ?

Electronics Because it is bigger than VTN

3. Get VDS equation and use the value of ID

from step 2

Use KVL:

IDRD + VDS + IDRS 5 5 = 0

1.354 (2) + VDS + 1.354 10

=0 ID

VDS = 10 1.354 2.708 =

4.

5.938

Calculate

V VDS sat

VDS > VDS sat CONFIRMED

Electronics

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