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• General Ferroelectricity
• Polar dielectric and nonpolar dielectricity
• Polarization and hysterics
• Relationship of ferroelectricity with crystal
structure
• Peroskyte structure
• Phase transition
• Domain wall motion
• Systematic absence
Perovskyte structure
• The perovskite structure have the chemical
formula ABO3.
• In cubic unit cell of such a compound, type 'A'
atom sits at cube corner positions(0, 0, 0), type
'B' atom sits at body centre position (1/2, 1/2,
1/2) and oxygen atoms sit at face centred
positions (1/2, 1/2, 0). (The diagram shows
edges for an equivalent unit cell with B at the
corners, A in body centre, and O in mid-edge).
Perovskites
A
You may say anything you like but
we all are made up of ferroelectrics
(B.T. Matthias)
Ferroelectricity
• Ferroelectricity is an electrical phenomenon
whereby certain materials may exhibit a
spontaneous dipole moment, the direction of which
can be switched between equivalent states by the
application of an external electric field.
• The internal electric dipoles of a ferroelectric
material are physically tied to the material lattice so
anything that changes the physical lattice will
change the strength of the dipoles and cause a
current to flow into or out of the capacitor even
without the presence of an external voltage across
the capacitor.
Ferroelectricity
Two stimuli that will change the lattice
dimensions of a material are force and
temperature.
• The generation of a current in
response to the application of a force
to a capacitor is called piezoelectricity.
• The generation of current in response
to a change in temperature is called
pyroelectricity.
• Placing a ferroelectric material between two conductive plates
creates a ferroelectric capacitor.
• Ferroelectric capacitors exhibit nonlinear properties and
usually have very high dielectric constants.
• The fact that the internal electric dipoles can be forced to
change their direction by the application of an external voltage
gives rise to hysteresis in the "polarization vs voltage"
property of the capacitor.
• Polarization is defined as the total charge stored on the plates
of the capacitor divided by the area of the plates.
• Hysteresis means memory and ferroelectric capacitors are
used to make ferroelectric RAM for computers and RFID
cards.
• The combined properties of memory, piezoelectricity, and
pyroelectricity make ferroelectric capacitors some of the most
useful technological devices in modern society.
• Ferroelectric capacitors are at the heart of medical ultrasound
machines, high quality infrared cameras, fire sensors, sonar,
vibration sensors, and even fuel injectors on diesel engines.
• The high dielectric constants of ferroelectric materials used to
concentrate large values of capacitance into small volumes,
resulting in the very tiny surface mount capacitor.
• The electrooptic modulators that form the backbone of the
Internet are made with ferroelectric materials.
• Most ferroelectric materials undergo a structural
phase transition from a high-temperature
nonferroelectric (or paraelectric) phase into a
low-temperature ferroelectric phase.
• The paraelectric phase may be piezoelectric or
nonpiezoelectric and is rarely polar.
• The symmetry of the ferroelectric phase is always
lower than the symmetry of the paraelectric phase.
• The temperature of the phase transition is called the Curie
point, TC.
• Above the Curie point the dielectric permittivity falls off with
temperature according to the Curie–Weiss law
pizoelectric pyroelectr
ic
• triclinic _ _
1, 1 1 1 1
monoclinic
2, m, 2/m 2/m 2, m 2, m
orthorhmbic
222, mm2, mmm mmm 222, mm2 mm2,
tetragonal __ __
4, 4, 4/m, 422, 4/m, (4/m)mm 4, 4, 422, 4, 4mm
4mm, 42m, 4mm,
(4/m)mm 42m
trigonal __ __
3, 3, 32, 3m, 3m 3, 3m 3, 32, 3m 3, 3m
hexagonal __ __
6, 6, 6/m, 622, 6/m, (6/m)mm 6, 6, 622, 6, 6mm
6mm, 6m2, 6mm,
(6/m)mm 6m2
cubic _ _
23, m3, 432, m3, m3m 23, 43m ------
43m, m3m
The general formulation of perovskite structure is ABO3,
where A --------+2 valence
and B --------+4 valence.
In the perovskite structure the A2+ and O2- ions form a
FCC unit cell
the A2+ ions at the corners of the unit cell.
The O2- ions is in the center of the faces of the unit cell.
The B4+ ion is located at the octahedral interstitial site at
the center of the unit cell and is coordinated to six O2-.
• T =Ra+Ro/2 Rb+Ro
Definition:
S = strain = constant (mechanically clamped)
T = stress = constant (not clamped)
E = field = constant (short circuit)
D = electrical displacement = constant (open circuit)