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Recent development of the SIThy

and its applications


RPIA2006
on March 7, 2006
*Naohiro Shimizu
**Susumu Yoshida, Akira Sugiyama, Katsufumi Nakanishi
***Weihua Jiang, Kyosuke Nakahiro, and Kiyoshi Yatsui
****Ken Takayama, Mitsuo Akemoto, Hikaru Sato, Eiji Nakamura,

Toshihiro Mimashi

*NGK Insulators, LTD


**Shindengen Electric MFG. CO., LTD
***Nagaoka University of Technology
****High Energy Accelerator Research Organizations
Cathode Cathode Cathode

Gate
ne ― Ca
Gate
n
or
+ P+ thn
en
+-
+vg
OPEN

Depletion
ode
P e
layer
Pe
G A
+ +
Anode Anode
Anode + + +

Off state Turn-on state Turn-off state

Actions of SIThyrisor electron

hole

Bullied and Junction Gate type


Si powerdevices

Switching Energy Dissipation

IGBT
IEGT

BSIT SIThy
MOSFET

CoolMOS

500 1000 1500 2000 2500 3000 3500 4000 4500 5000

Device Blocking Voltage, Vdgm (V)

Switchig Enegy Dissipation of Si-Power Devices


at swithing voltage of Vdgm/2, and frequency of 10kHz
Bullied 4kV/300A
gate typed SIThys developed
4kV/600A
within 10 years4kV/30A
5.5kV/600A
2006
type
/400A(R) /400A(R)
Ceramics Ceramics Ceramics Plastic Mold
package Sheered type Sheered type Sheered type type
(Reverse Conducting) (Reverse Conducting)

Outside
view 15mm/12mm
Φ36mm
Φ62mm

Inverter Inverter Pulsed power Pulsed power


applicat
ions Pulsed power (Soft Switching) Inverter
Adequate high gate-driving make it possible to control the SIThy as high speed turn-on switch!
by Tokyo Institute of Technology

A
r
SIThyristor
High
dig/dt Diode

& Short
up to 2.0E11A/s ( ~
2.8E11As)
dIA/dt
SIThys for the Accelerator as Closing Switches by KEK
Peak Voltage 45 kV Peak Voltage 20kV
Peak Current 6 kA Peak Current 1.3 kA
Pulse Width 5.5μ s Pulse Width 2.0μ s
Repetition 50 Hz Repetition 50 Hz

Table 5.3   RT103P の特性

45kV Power Supply 4kV SIThy-unit

(a) Switching modulator for Klystron (b) Pulsed power supply for Kicker Magnet
Application to Kicker Magnet Systems 
        for Fast Injection/Extraction of beam into/from circular accelerator   
Hard Requirement for Switching Devices as Kicker ­ Modulator : 

    Fast Turn­ON time        3[KA] / 50[ns]    ~    10 [KA] / 300[ns] 

                                        40[KV] / 50 [ns]     

                                R&D    and    Application     


Test Stand level      :        1.8 [KA] / 100 [nsec]    achieved, at first step. 

Low Rise­Time Kicker    :       

    A modulator for KEK­B injection kicker is working now. 
Test Stand of Modulator      :      10[KV], 1.8[KA] / 100[nsec]    achieved 

 
                                                                                                                        Current Wave form at R=5.6 ohm (1[KA/div]; 200[ns/div] ) 

                 
Low Inductive gate driver make it possible to control the SIThy as high speed switch!

reducing the inductance


around the Gate circuit

Inductance ≈ 6nF

ts=0.4μs
(a) Turn-off waveforms by the Low Inductive gate
driver.

Inductance ≈ 50nF

ts=1.7μs

(b) Turn-off waveforms by the conventional gate driver.


High Power Soft switching Inverters ; 5.4kHz, 210kVA
Axially Resonant Commutated Pole (ARCP) Inverter for Electric Train   

Features of the SIThy,


Short switching delay and storage time

make it easy to realize low-noise


soft switching inverters

2240mm
/ 850mm
/ 650mm
by Japan Railways
& Toyo Electric MFG
Inductive Energy Storage (IES) pulsed power supply utilizes the features of SIThy

low
voltage
input High dVdt
voltage
: 1.0E11V/s
, at the Vp:2.1kV
lowest
as 24V

IES
Pulsed
power
supply
Short and high voltage pulse can be
generated by using the pulse-trance;
Vp: over 30kV, peak dVdt: 2.0E11Vs, and
pulse wavelength: 100ns,
Summary
• High voltage SIThys fits for the pulsed power and the soft switching applications.
• The key technology to drive the SIThy is “high Gate driving”, which realize the
short switching time. It is important to minimize the inductance around the Gate
circuit.
• The pulse power supply for the Klystron and kicker magnet by KEK made most
of the features of SIThy having the high tolerance to the high current and to the
high rise-up rated current as over 2.0E11A/s.
• Inductive Energy Storage (IES) pulsed power supply makes most of the features
of the junction-Gate typed SIThy and realizes the compact circuit, which
generates high rise-up rated voltage as over 2.0E11V/s.