A summary presented as part of the Click to edit Master subtitle stylecourse IH 2657 Design of Nano-Semiconductor Devices By Himadri

Pandey To Proff. Dr. Carl-Mikael Zetterling


The measured transistor resistance in the linear region under gradual channel approximation has been calculated here as: 5/14/12 . so this region was suspected initially to have been formed due to this oxide layer formation.Formation of low resistivity S/D extension regions Previous research had proved that Ti S/D electrodes can easily form a Ti-oxide layer at the interface area of an oxide semiconductor layer.

. when viewed under a scanning electron microscope.Formation of TiOx observed under SEM 5/14/12 A thin TiOx layer was also observed to have formed under the Ti electrode.

5/14/12 . The source of this hydrogen has been suggested as the hydrogen plasma exposure that occurs during the SiO2 passivation layer deposition by PECVD using SiH4 gas.Confirmation of occurrence of reduction reaction by measuring activation energy: Arrhenius plot of diffusion coefficient However. during this research. experimental resistance measurement results fitted with activation energy calculations based resistance results confirmed that this region is formed due to a reduction reaction by hydrogen diffusion from the S/D region into the IGZO layer as against any oxygen-related phenomenon.

Other observations & related comments (1) • It was also found that the carrier concentration in such a S/D extension region is gradual and can be approximated by a complimentary error function. gate voltage.t. 5/14/12 . This explains the variations in TFT performance parameters w.r.

5/14/12 . making this region behave like a transistor in itself. the electrical resistance as well as the length of such a low resistivity S/D extension region varies with applied gate voltage.Other observations & Related Comments (2) • As a consequence.

The length of the low resistivity S/D extension region increases with increase in the post passivation annealing temperature. The activation energy calculations prove that the low resistivity S/D extension region is formed due to a reduction reaction occurring in the In-Ga-Zn-O 5/14/12 thin film rather than any oxidation reaction.Summary points • TFT performance parameters depend upon Vg because of the gradual carrier distribution observed in low resistivity S/D extension regions. This gradual carrier distribution can be approximated through a complementary error function. as • • • .

Thank you ! Q & A? 5/14/12 .

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