Thesis Defense - Exploring Memristor Topologies

Serdar Benderli
Adviser: Todd A. Wey

Lafayette College
Spring 09
1:11:31 PM
Presentation Outline
Introduction to Memristors
Theory
Thin-Film TiO2 Memristors
Potential Applications
Current Problems in Memristor Research
Behavioral Modeling of TiO2 Memristors
SPICE Model
Results
Topologies
Memristor Switch
Memristor AM Modulator
Q-Factor Controller for 2
ND
Order Band-Pass Filter
Conclusions

Behavioral Modeling of TiO
2
Memristors Serdar Benderli

1:11:31 PM
What is a Memristor?
1:11:31 PM
2

Theorized first in 1971 by Leon Chua
Links charge and flux

Remembers history of the current that
passed through it by changing its
resistance

)) ( ( ) ( ) (
/
/
) (
t q M t I t V
I
V
dt dq
dt d
dq
d
q M
m m
=
= = =
| |
2

Theory
1:11:31 PM
Thin-Film TiO
2

Realization
1:11:31 PM
2

Thin-Film TiO
2
Memristors
|
.
|
\
|
+ = )
) (
1 (
) (
) ( ) (
D
t w
R
D
t w
R t i t v
OFF ON m m
) (
) (
t i
D
R
dt
t dw
ON
v
=
0
) (
0 i(t) = =
dt
t dw
For
...Memory!
|
.
|
\
|
+ = )
) (
1 (
) (
) (
D
t w
R
D
t w
R t M
OFF ON
1:11:31 PM
2

Potential Applications
Non-Volatile RAM (NVRAM)
May replace flash memory in market in 5 years
Slow-speed is a problem

Simple Learning Circuits
Amoeba Learning Circuit

Artificial Neural Networks
Analog Devices that mimic brains.
Decision-making, unsupervised learning, and
signal processing in analog domain.

1:11:31 PM
2

Problems in Memristor Research

No off-the-shelf memristors

Lack of software simulation
support
1:11:31 PM
2

1. Design for when w is within
bounds

2. Constrain w between 0 and D

3. Implement nonlinear drift
1. Via window function
2. Via extra capacitance

SPICE Model Step by Step
1:11:31 PM
2

SPICE Model Unconstrained w
) ( )
) (
1 (
) (
) ( t i
D
t w
R
D
t w
R t v
m OFF ON m

|
.
|
\
|
+ =
) (
) (
t i
D
R
dt
t dw
ON
v
=
) ( ) ( t q
D
R
t w
ON
v
=

R
OFF
g
min
C
W
I
w
w(t)
+
v(t)
-
F(w,i(t))
i(t)
1
2
1:11:31 PM
2

I
w
D
w(t)
D
I
W
w(t)
w(t)
R
OFF
g
min
C
W
I
w
w(t)
+
v(t)
-
F(w,i(t))
i(t)
1
2
SPICE Model Constrained w
1:11:31 PM
2

Experimental results differ
from the theory
It takes a significantly
higher amount of current
to drive w to either
boundary
In other words, dw/dt
approaches 0 as w
approaches either 0 or D.

SPICE Model Nonlinear Drift
1:11:31 PM
2

Model via a window
function:

Model via higher
capacitance near
boundaries

( )
) (
2
t i
D
R
D
w D w
dt
dw
ON
v
=
R
OFF
g
min
C
W
I
w
w(t)
+
v(t)
-
F(w,i(t))
i(t)
1
2
SPICE Model Nonlinear Drift
1:11:31 PM
2

HP Paper
Our Model
Results Behavior Comparison
Unconstrained w

HP Paper
Our Model
Constrained w
1:11:31 PM
2

HP Paper
The Model
Nonlinear Drift via Window Function
1:11:31 PM
2

Memristance is varied between 0-D
by constant current source

How fast it can switch will determine
the maximum frequency it can be
used in an application like NVRAM.

1:11:31 PM
Topologies Memristor Switch
I
M
M
I
M
=10A t
s
=10sec F
max
= 100KHz
P=I
M
2
R
OFF
P
MAX
=1.6MW
1:11:31 PM
) (
) (
t I
D
R
dt
t dw
M
ON
v
=
M
ON
V
f
s M
ON
V
I
D
R
w w
t t I
D
R
w t w
0
0
) (

= + =
0
2 2
0 0
2
0
0 0 2
0
0
( ) ( ) ( )
(1 ) ( )
( )
( )
( )
2
ts ts
ON OFF
s M ON OFF M OFF
ts
ON OFF V ON
M OFF M
ts
f f
ON OFF s V ON
M OFF M
s s
R R w t w t
E I R R dt I R w t dt
D D D
R R R
I R w I t dt
D D
w w w w
R R t R
I R t w t I
D t D t
| | | |
= + =
| |
\ . \ .
| |
= +
|
\ .
( | |
= + + : =
( |
\ .

} }
}
0 0
2
f f
ON OFF
s M OFF
V ON
w w w w
R R
E I R D
D R
+ | | | |
= +
| |
\ .\ .
Memristor Switch Non-Windowed Case
Mathematical Analysis
1:11:31 PM
2
2 2 2
1 1 1 1
1 ( ) 1
2 2
OFF OFF
s s s s
V ON V ON V ON ON s
R R D D D
E t E t
R R R R t
| | | | | |
= + = +
| | |
\ . \ . \ .
10
-9
10
-8
10
-7
10
-6
10
-5
10
0
10
1
10
2
10
3
10
4
10
5
X: 1e-005
Y: 8.05
ts (sec)
E
n
e
r
g
y

(
J
o
u
l
e
s
)

At t
s
=10sec, E
s
=8.05J

P
AVG
=E
s
/t
s

For t
s
=10usec, P
AVG
= 805KW.
1:11:31 PM

Time
0s 0.5ms 1.0ms
0A
5A
10A
0
10K
20K
0W
1.0MW
2.0MW
C
u
r
r
e
n
t

M
e
m
r
i
s
t
a
n
c
e

P
o
w
e
r

MATLAB Integration of Power gives E=8.049J

Results Agree!
SPICE Simulation
1:11:31 PM
Memristor Switch - Windowed Case
( )
) (
) ( ) (
4
) (
2
t i
D
R
D
t w D t w
dt
t dw
ON
v
=
( )
dt I
D
R
D
t w D t w
t dw
M
ON
v
=
2
) ( ) (
4
) (
t I
D
R
K
D w
w D
M
ON
v
+ =
|
|
.
|
\
|
|
.
|
\
|
+
0
ln
4
At
e K
DK
t w
+
=
'
0
'
0
) (
where
M
ON
V
I
D
R
A
2
4 =
and
0
0 '
0
'
0
'
0
0
1
) 0 (
w D
w
K
K
DK
w w
=
+
= =
1:11:31 PM
A
w
w D
K
t
e K
DK
w
f
f
sw
At
f
|
|
.
|
\
|
=
+
=
'
0
'
0
'
0
ln
( ) ( ) ( )
2 '
0
1
ln
At
sw M ON OFF OFF
E I R R t K e R t
A
(
| |
= + +
| (
\ .

For I
M
=10A, w
f
=0.999D, t
sw
=34.53sec
F
max
= 29KHz
For t
sw
=34.53sec, E
sw
=27.8J
1:11:31 PM
( ) ( ) ( ) ( )
'
0
2
2
2 ' '
0 0
ln
4
4
1 1
( ) ln ln 1
f
f
ON
M v M
ON
v sw
Atsw
sw sw M ON OFF sw OFF sw
D w
K
w
R
I A I
R
D
t
D
E t I R R t K e K R t
A A
| |
|
|
\ .
= =
( | | | |
= + + + +
( | |
\ . \ .
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
0
10
1
10
2
10
3
10
4
10
5
10
6
X: 3.45e-005
Y: 27.79
tsw (sec)
E
n
e
r
g
y

(
J
o
u
l
e
s
)

For t
sw
=34.53sec, E
sw
=27.8J

P
AVGw
=E
sw
/t
sw

For t
sw
=34.53usec, P
AVGw
= 805KW.

1:11:31 PM
( ) ( ) ( ) ( )
'
0
2
2
2 ' '
0 0
ln
4
4
1 1
( ) ln ln 1
f
f
ON
M v M
ON
v sw
Atsw
sw sw M ON OFF sw OFF sw
D w
K
w
R
I A I
R
D
t
D
E t I R R t K e K R t
A A
| |
|
|
\ .
= =
( | | | |
= + + + +
( | |
\ . \ .
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
0
10
1
10
2
10
3
10
4
10
5
10
6
X: 3.45e-005
Y: 27.79
tsw (sec)
E
n
e
r
g
y

(
J
o
u
l
e
s
)

For t
sw
=34.53sec, E
sw
=27.8J

P
AVGw
=E
sw
/t
sw

For t
sw
=34.53usec, P
AVGw
= 805KW.

1:11:31 PM

Time
0s 0.5ms 1.0ms
0A
5A
10A
0
10K
20K
0W
1.0MW
2.0MW
C
u
r
r
e
n
t

M
e
m
r
i
s
t
a
n
c
e

P
o
w
e
r

MATLAB Integration of Power gives E=27.761J

Results Agree!
1:11:31 PM
Memristor Switch - Conclusions
Even with 10A, switching speeds very
slow.

Requires huge amounts of power and
unfeasible energy.

I
M
M
Memristance is used in an inverting gain configuration

A low-frequency control signal changes w(t), which changes the gain on the
high-frequency signal.

The filtered signal is the modulated carrier.

1:11:31 PM
Topologies Memristor AM Modulator
R
1
v
RF
(t)
High-Pass
Filter
Vout(t)
M
1
d/dt
v
AM
(t)
+ v
M
(t) -
1:11:31 PM
AM Modulator Non-Windowed Case
( ) ( )
1
( ) 1
AM
RF
d v t
i t v t
R dt
(
=
(

R
1
v
RF
(t)
High-Pass
Filter
Vout(t)
M
1
d/dt
v
AM
(t)
+ v
M
(t) -
) (
) (
t i
D
R
dt
t dw
ON
v
=
( )
0
1
( ) (0) ( ) ( )
t
V ON
RF AM
R
w t w v t dt v t
R D
u
(
= +
(

}
( )
( )
( )
1
2
0
1 1
( ) (0) 1
( ) ( )
( ) 1
( ) ( ) ( )
AM
M OFF ON OFF RF
t
V ON AM
ON OFF RF AM RF
d v t w
v t R R R v t
D R dt
R d v t
R R v t dt v t v t
R D R dt
u
( (
= + +
( (

(
(

(
(

}
( )
( ) ( )
AM
opamp M
d v t
v t v t
dt
=
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
0.5
1
x 10
-8
X: 0.7503
Y: 9.003e-009
L
e
n
g
t
h

(
m
)
w(t)
X: 0.2377
Y: 1.009e-009
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-10
-5
0
5
10
X: 0.0955
Y: 5.78
A
m
p
l
i
t
u
d
e

(
v
o
l
t
s
)
vout(t)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-4
-2
0
2
4
X: 0.2575
Y: 2.881
Time (sec)
A
m
p
l
i
t
u
d
e

(
v
o
l
t
s
)
vfiltered(t)
X: 0.7505
Y: 0.338
1nm < w(t) < 9nm
C T
C
v v
m
v
=
Crest = 2.88V
Trough = 0.32V
m
i
=88%
v
max
=5.78V
THD Analysis
0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000
-600
-500
-400
-300
-200
-100
0
X: 1
Y: 0
Frequency (Hz)
M
a
g
n
i
t
u
d
e

R
e
l
a
t
i
v
e

t
o

F
u
n
d
a
m
e
n
t
a
l

F
r
e
q
u
e
n
c
y

(
d
B
)
X: 1000
Y: -147.5
With perfect components, w(t) is the envelope on the carrier.

Distortion due to small high-frequency signal component.
This also gives us best-case THD. For 88% THD=6.34e
-5
%

THD Analysis
Can plot THD over modulation indices.

0 10 20 30 40 50 60 70 80 90 100
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
X: 88.18
Y: 6.338e-005
Modulation Index (%)
T
H
D

(
%
)
For lower modulation, the high-frequency component creates THD.

SPICE Simulation
1nm < w(t) < 9nm
SPICE Simulation
v
max
=5.78V
SPICE Simulation
C T
C
v v
m
v
=
Crest = 2.81V
Trough = 0.34V
m
i
=87.9%
Offsets due to imperfect filtering
THD Analysis
Detect envelope on the SPICE simulation output. Look at THD.
THD =0.018%.
Offset due to imperfect filter.

0 50 100 150 200 250 300 350 400 450 500
-700
-600
-500
-400
-300
-200
-100
0
X: 1
Y: 0
X: 2
Y: -86.79
M
a
g
n
i
t
u
d
e

R
e
l
a
t
i
v
e

t
o

F
u
n
d
a
m
e
n
t
a
l

F
r
e
q
u
e
n
c
y

(
d
B
)
Frerquency (Hz)
AM Modulator Windowed Case
( )
2
( ) ( ) ( )
4 ( )
w w w ON
v
w t D w t dw t R
i t
dt D D
= ( ) ( )
1
( ) 1
AM
RF
d v t
i t v t
R dt
(
=
(

|
|
.
|
\
|
+ =
+
}
) ( ) ( ln
4
0 1
0
t v dt t v
D R
R
K
D w
w D
AM
t
RF
ON
v
w
w
2
1
0
2
1
0
4 ( ) ( )
'
0
4 ( ) ( )
'
0
( )
1
t
ON
v RF AM
t
ON
v RF AM
R
v t dt v t
R D
w
R
v t dt v t
R D
DK e
w t
K e
| |
|
|
\ .
| |
|
|
\ .
}
=
}
+

,
0
0 '
0
w D
w
K
=
R
1
v
RF
(t)
High-Pass
Filter
Vout(t)
M
1
d/dt
v
AM
(t)
+ v
M
(t) -
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
0
0.5
1
x 10
-8
X: 0.7503
Y: 9.003e-009
L
e
n
g
t
h

(
m
)
w(t)
X: 0.2377
Y: 1.009e-009
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-10
-5
0
5
10
X: 0.0955
Y: 5.78
A
m
p
l
i
t
u
d
e

(
v
o
l
t
s
)
vout(t)
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-4
-2
0
2
4
X: 0.2575
Y: 2.881
Time (sec)
A
m
p
l
i
t
u
d
e

(
v
o
l
t
s
)
vfiltered(t)
X: 0.7505
Y: 0.338
1nm < w(t) < 9nm
C T
C
v v
m
v
=
Crest = 2.88V
Trough = 0.33V
m
i
=88%
v
max
=7.5V
THD Analysis
With perfect components, w(t) is the envelope on the carrier.

The harmonics play a bigger role.

0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000
-400
-350
-300
-250
-200
-150
-100
-50
0
X: 1
Y: 0
M
a
g
n
i
t
u
d
e

R
e
l
a
t
i
v
e

t
o

F
u
n
d
a
m
e
n
t
a
l

F
r
e
q
u
e
n
c
y

(
d
B
)
Frequency (Hz)
X: 3
Y: -51.11
X: 5
Y: -97.7
THD Analysis
For lower modulation, the high-frequency component creates THD.

For higher modulation, the windowing creates THD.
Lowest THD is 1.89e
-3
%

0 10 20 30 40 50 60 70 80 90 100
10
-3
10
-2
10
-1
10
0
10
1
X: 29.76
Y: 0.001897
T
H
D

(
%
)
X: 0.9169
Y: 2.454
X: 88.01
Y: 0.5419
SPICE Simulation
1nm < w(t) < 9nm
SPICE Simulation
v
max
=5.78V
SPICE Simulation
C T
C
v v
m
v
=
Crest = 2.79V
Trough = 0.34V
m
i
=87.8%
Offsets due to imperfect filtering
THD Analysis
Detect envelope on the SPICE simulation output. Look at THD.
THD =0.69%.
Offset due to imperfect filter.

0 50 100 150 200 250 300 350 400 450 500
-700
-600
-500
-400
-300
-200
-100
0
X: 1
Y: 0
X: 3
Y: -50.47
X: 5
Y: -96.74
Frequency (Hz)
M
a
g
n
i
t
u
d
e

R
e
l
a
t
i
v
e

t
o

F
u
n
d
a
m
e
n
t
a
l

F
r
e
q
u
e
n
c
y

(
d
B
)
THD Analysis
Plot three SPICE simulation results on the predicted THD plot
0 10 20 30 40 50 60 70 80 90 100
10
-3
10
-2
10
-1
10
0
10
1
T
H
D

(
%
)
1:11:31 PM
Memristor AM Modulator- Conclusions
Results agree with the math.

Carrier is successfully modulated in
both cases.

R
1
v
RF
(t)
High-Pass
Filter
Vout(t)
M
1
d/dt
v
AM
(t)
+ v
M
(t) -
Use a cascaded Sallen-Key Topology to realize a BP filter.

1:11:31 PM
Topologies Q-Factor Controller for 2
nd
Order BP Filter
2 2
0
0
( )
Ks
H s
s s
Q
e
e
=
+ +
Out1
1
Integrator1
1
s
Integrator
1
s
Gain4
1/Q
Gain3
-1
Gain2
K
Gain1
w0
Gain
w0
In1
1
1:11:31 PM
Q-Factor Controller Mathematical Analysis
Q-Factor = 10
Frequency (Hz)
Q-Factor=1
Frequency (Hz)
10
3
10
4
10
5
-40
-35
-30
-25
-20
-15
-10
-5
0
M
a
g
n
i
t
u
d
e

(
d
B
)
10
2
10
3
10
4
10
5
10
6
-50
-40
-30
-20
-10
0
M
a
g
n
i
t
u
d
e

(
d
B
)
0
= 1/RC = 62,832Rad/sec f
0
=10KHz
1:11:31 PM
Q-Factor Controller Circuit Realization
10K
1.592nF
10K
10K
V
IN
1.592nF
10K
M
Q
10K
10K
10K
R
Q
10K
R
K
v
out
Integrator #1
Integrator #2
1:11:31 PM
Q-Factor Controller SPICE Simulation
AC Sweep
Q-Factor = 10 Q-Factor = 1
1:11:31 PM
Transient Analysis
W(t) is negligibly affected by 100Hz
signal

However, drift will affect filter
performance in long-run
1:11:31 PM
Transient Analysis
Input voltage @ memristor node Output Voltage
1:11:31 PM
Q-Factor Controller Conclusions
Have 2 degrees of freedom in picking Q-Factor
Choose w
0
Choose R
2

AC analysis agrees with the math

Transient analysis shows drift in w(t) will be a problem

Needs a feedback controller circuit
Conclusions
Memristors may play a crucial role in the future

Lack of computer simulation support is a problem

Behavioral modeling provides a solution
Cheap, easy, efficient circuit simulation
Model is expandable and robust

The topologies make use of memristive behavior and
prove that model is robust
1:11:31 PM
2

Questions
1:11:31 PM
2

Artificial Neural Networks

Analyze neural network
topologies with SPICE
model

HP Labs and Boston
University were recently
awarded a contract by
DARPA to build the first
artificial neural network
based on memristors.

2

1:11:31 PM
Function of charge

No direct relationship between Charge
and Flux

Energy storage unknown.

Works better as it gets smaller. Less
heat dissipation

Comparison With Theory
|
.
|
\
|
= ) ( 1 ) (
2
t q
D
R
R q M
ON V
OFF

2

1:11:31 PM
Realization
2

1:11:32 PM

Simple Topologies Memristors in Parallel
2

1:11:32 PM

Simple Topologies Memristor Divider
2

1:11:32 PM

R
OFF
g
min
C
W
I
w
w(t)
+
v(t)
-
F(w,i(t))
i(t)
1
2
SPICE Model Added Capacitance
2

1:11:32 PM

HP Paper
Our Model
Nonlinear Drift via Added Capacitance
2

1:11:32 PM
Amoeba Learning

When subjected to three
spikes of cold temperature,
amoeba change their speed.
When the spikes stop,
amoeba still change speed at
when the spikes would have
happened

An RLCM circuit can
be constructed to
learn and predict
subsequent spikes
2

1:11:32 PM

Thesis Defense - Exploring Memristor Topologies

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Thesis Defense - Exploring Memristor Topologies

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Serdar Benderli

Adviser: Todd A. Wey

Behavioral Modeling of TiO

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