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User Guide
Phone: 1•914•923•2164
Fax: 1•914•923•2169
info@rsoftdesign.com
www.rsoftdesign.com
Copyright © 1999-2008
All Rights Reserved.
Contents
Preface 1
Overview .....................................................................................................................2
Notices .......................................................................................................................................3
Limited Warranty ........................................................................................................3
Copyright Notice .........................................................................................................3
RSoft Design Group™ Trademarks.............................................................................3
Acknowledgments .......................................................................................................3
System Requirements.................................................................................................................3
How to read this manual ............................................................................................................3
What should I read and when?.....................................................................................3
Conventions .................................................................................................................4
Chapter 1: Installation 5
1.A. Main Program Installation..................................................................................................5
1.B. Testing the LaserMOD Installation ....................................................................................6
1.C. What Next?........................................................................................................................9
README File .............................................................................................................9
Examples ...................................................................................................................10
Technical Support & Software Upgrades ..................................................................10
Chapter 6: InGaAs FP (1D) with Table Gain model and Self-Heating 129
6.A Layout .............................................................................................................................129
6.B Setting the Thermal Boundary Conditions ......................................................................129
6.C. Effects of Self-Heating...................................................................................................131
Chapter 12: DFB With Two Uniform Gratings and a Phase Shift 231
12.A. Structure Overview ......................................................................................................231
12.B. Creating the Structure in the CAD Environment..........................................................232
12.C. Setting the Bias Parameters ..........................................................................................232
12.D. View the Mesh .............................................................................................................233
12.E. View the Index Profile..................................................................................................234
12.F. Calculating the Modes ..................................................................................................235
12.G. Running a Simulation...................................................................................................238
12.H. Plotting Results ............................................................................................................240
Index 463
LaserMOD is an integrated software package for the design and simulation of semiconductor lasers and active photonic
structures. The current version can accomodate Fabry-Perot (F-P) edge emitters, vertical cavity surface emitting lasers
(VCSEL), distributed feedback lasers (DFB), and detector applications. LaserMOD is a fully integrated platform with
user friendly parametric CAD interface, nonuniform Delauney mesh generator, material libraries, gain and mode
calculation utilities, simulation engine, standard and custom plot generation utilities, and versatile graphical viewing
utilities.
The interface is organized in a sequential manner so as to allow for validation of each step of the design process.
Layouts can be verified both graphically and via text reports, waveguiding can be studied, and quantum well gain can be
optimized, all before the first laser performance simulation is run. Both steady-state and transient performance can be
simulated. The standard characteristics such as L-I, I-V, frequency response, etc… are generated and saved during each
run, for easy comparison. Finally, all real and energy space data are stored at every bias point and can be retrieved via a
custom plot generation utility, so there is no need for plot selection prior to a simulation run.
With the LaserMOD interface, a designer can layout a nearly arbitrary 2D geometric cross-section. If an F-P cavity
structure is chosen, then this cross-section is treated as perpendicular to the optical axis and the lasing direction is
defined by a cavity length and facet reflectivities. If a VCSEL structure is selected, then the cross-section will span the
radial and lasing axis of the structure. In this case, the geometry is treated as a body of revolution, yielding a 3D
simulation, albeit cylindrcal symmetry is enforced, DFB’s are simulated in the plane defined by the growth direction and
the direction of propagation so as to include longitudinal effects. Finally, photodetectors are simulated in cross-section
as F-P’s, though the light is assumed incident from the top of the device.
The geometric layout is currently created from a combination of rectangular regions, each specifying a particular
material system. Each material is conveniently selected from a pulldown list that reflects every system in the material
library, including those added by the user. The material systems commonly found in semiconductor lasers are included
with the software. Library parameters may be overriden, region by region, via local symbol tables. Finally, the alloy
composition and doping can be varied arbitrarily within each region.
Pre-simulation setup includes mesh generation, which is controlled by a default parameters that can be conveniently
overriden both globally and locally, region by region. The selection of bias ranges, to drive the simulation, is also
conveniently facilitated by a Bias Editor that allows for activation/deactivation of any set of bias points and setting of
bias specific simulation options such as transient or steady-state.
A variety of mode solvers are included to accommodate both single and multimode structures. In addition to a Ritz-
iteration technique for waveguide modes and an Effective-Index Transfer Matrix Method for 1D VCSELs and DFBs,
LaserMOD has been integrated with RSoft’s BeamPROP and FemSIM so that the Beam Propagation Method (BPM) and
Finite-Element method (FEM) can also be exploited for waveguide and 2D VCSEL modes solving, respectively.
In addition to optical, electronic and thermal transport must be simulated in order to accurately predict semiconductor
laser performance. The techniques used in LaserMOD are based on those in Minilase-II, from the University of Illinois
at Urbana-Champaign. These include a free-carrier 8x8 band K⋅P method for calculating the gain in quantum well
regions, rate based carrier capture between bound and continuum (propagating) states in the quantum well, and fully
coupled solution of the drift-diffusion equations, with thermionic emission at heterojunctions, and the photon rate
Overview
The outline of this manual is as follows: Chapter 1 describes the straightforward procedures for installing the package,
and should be read before installation. Chapter 2 provides technical background on the theory and simulation
techniques used by the program, along with references. Chapter 3 gives an overview of the software by describing the
various aspects of the graphical interface, and how they are used to design and simulate a laser struncture. Chapter 4
demonstrates some of the results that can be generated with the software, by considereing several tutorial examples that
are included with the software distribution.
Limited Warranty
RSoft Design Group, Inc. warrants that under normal use, the physical media (diskette and documentation) will be free
of material defects for a period of thirty days from the date of purchase. Upon written notice, RSoft Design Group, Inc.
will replace any defective media. No other warranty of any sort, either expressed or implied, is provided with this
software. No liability for damage to equipment or data, or any other liability, is assumed by RSoft Design Group, Inc.
Copyright Notice
Copyright © 1999-2006 RSoft Design Group, Inc. All Rights Reserved.
Copyright is claimed for both this manual and the software described in it.
Acknowledgments
IBM is a registered trademark and IBM PC, PS/2, and OS/2 are trademarks of International Business Machines
Corporation. Intel is a trademark of Intel Corporation. Microsoft and MS- DOS are registered trademarks and Windows
is a trademark of Microsoft Corporation. All other product names referred to in this document are trademarks or
registered trademarks of their respective manufacturers.
System Requirements
LaserMOD will run on an IBM compatible personal computer with an Intel Pentium III or higher processor (or AMD
equivalent), 256 MB RAM or higher depending on the application, and 250 MB of hard-disk space. A Windows version
is available and requires Windows 2000/XP.
Additional requirements may exist if Gain Tables are to be installed (see Section 1.C.).
Conventions
This section describes various conventions concerning the physics, the product names, and the manual.
Physics Conventions
As with any branch of science, there are a number of concepts in the study of active photonic devices for which there
exist several different definitions in the literature. The following are the conventions adopted in LaserMOD.
Units
The units in LaserMOD are as follows:
• The standard unit of length is measured in microns (µm) unless otherwise specified.
• The angular unit used is degrees, unless ohterwise specified.
Manual Conventions
A number of typeface and layout conventions are followed in this manual.
• Actions to be performed in the LaserMOD interface are usually indented in bulleted or numbered lists.
• The names of fields and controls in the GUI dialogs are written in boldface Courier
• The values of pull-down menus and radio button controls are written in Roman italics.
• Symbol table variables and formulas, and expressions to be typed into the GUI edit fields are written in
Courier.
• In referring to example LaserMOD files, the installation directory is specified as <rsoft_dir>, and
should be replaced with the correct location of your installation. On Windows machines the default
installation is c:\RSoft\Bin.
This chapter explains the installation procedure for LaserMOD, and provides a quick example to test the installation.
If a error message involving the hardlock key appears, please review the hardlock instructions found in the RSoft
Installation Guide.
3. Hit the Run Simulation icon (the green light). The LaserMOD simulation dialog will appear.
README File
The file readmelm.txt, which is located in the installation directory, should be read. This file may be viewed in any
text editor, such as Windows Notepad. The readme file provides important last minute information about LaserMOD
that is not contained in this manual, including new or improved features and options.
If the InGaAs980nm gain tables have been installed, then the following additional examples will be present:
• \fp1d_table\fp1d_table.las
InGaAs FP broad area (1D) edge emitter with Table Gain model.
• \fp1d_table_therm\fp1d_table_therm.las
InGaAs FP broad area (1D) edge emitter with self-heating and Table Gain model.
2.A. Introduction
This chapter provides technical information, terminology and notation, journal references, and other pertinent
information regarding the use of LaserMOD.
The objective of LaserMOD is to provide a general laser diode simulation package (Laser MODeling and Design
Software) for use in both industrial R&D and university research applications.
LaserMODTM is a photonic device design tool for simulating optical and electronic properties of semiconductor lasers.
LaserMOD combines the most versatile, user-friendly, and easy to learn GUI in the market, with a powerful, robust
simulation engine, which provides for the self-consistent solution of electro-thermal transport and optical field
propagation. Device applications currently include edge emitting, such as Fabry-Perot type, and vertical surface emitting
(VCSEL) lasers. Resulting from ongoing development effort, future releases of this tool will address DFB, SOA and
PBG cavity-based lasers. Together with the other component design products from RSoft Design Group, LaserMOD is
well positioned to meet the design need for optoelectronic integrated circuits.
Convenient Layout
LaserMOD shares the same advanced parametric CAD technology that is used by the other component design tools in
RSoft Design Group's tool suite, such as BeamPROPTM and FemSIMTM. The GUI is structured to lead the engineer
through the design of a semiconductor laser. Convenient layout utilities assist in defining the geometry. Predefined
region types such as multiple quantum wells or distributed Bragg reflectors enable quick and intuitive input of the
corresponding layers as well as the associated material parameters. Arbitrary profiles for doping or material composition
can be defined and verified via designated utilities.
Simulation Interface
You do not need to be a simulation expert to begin using LaserMOD. After defining a laser structure using the
parametric CAD system, starting a simulation can be as easy as clicking on the “Go” icon (green light), and selecting
“OK” to accept the default simulation options. These options, which control numerical parameters such as grid spacing
and convergence criteria as well as default material and model parameters are automatically given intelligent default
values based on the material properties and geometry of the design. The progress of the simulation can be observed in a
graphical window that displays results as they become available.
Proven Technology
The simulation capabilities of the package are based on the renowned Minilase-II program, developed at the University
of Illinois, in Urbana-Champaign. LaserMOD solves the electro-thermal transport, optical properties, and carrier-photon
interactions, using a fully coupled numerical scheme on a spatial discretization of the device geometry specified by the
CAD layout. A methodology for carrier transport has been developed and established for silicon device simulation in
multiple dimensions that LaserMOD adapts for material systems common to semiconductor lasers, to describe electronic
transport through bulk regions, in which active layers may be embedded. The injection current into the active quantum
well region determines the carrier densities within bound quantum well states and therefore, the degree of inversion. For
carrier transport through bulk semiconductor regions the drift-diffusion system of equations is applied (carrier continuity
equations, Poisson’s equation). This set of equations has been extended to an electro-thermal transport model
appropriate for describing self-heating effects. LaserMOD includes a complete set of models for carrier mobility,
radiative and non-radiative recombination, thermionic emission, quantum corrections, etc.
2.A.4. Analysis
LaserMOD provides a complete set of post-processing and visualization capabilities. The visualization utility offers a
list of standard plots, which allow for quickly displaying device characteristics of common interest, such as IV, LI,
spatial distribution of carriers, modal gain spectrum, energy bands and many others. Access to virtually all simulation
data is provided for via customizable plotting features. A variety of plotting utilities is available which allow the user to
view the spatially resolved plots from any perspective or cross-section
LaserMOD is complete with standard material libraries, tutorial examples, on-line help, and all simulation and analysis
features integrated under a single graphical user interface. Some of the distinctive features are itemized below.
CAD Features
• Designer friendly parametric CAD interface for device layout and selection of all material and simulation
parameters
• Custom material library editor for extending the standard material libraries
• Local, region by region, material parameter control to override library values without having to edit the
library
• Fully integrated, user controllable, non-uniform grid generator with global and local grid parameter
settings.
• Bias control editor to make driving the simulation easy and versatile
• Easy selection of simulation options for enabling/disabling physical models
• Isolated index profile generation, mode calculation, and material gain calculation utilites
• Custom and standard plot generation utilities
• Generation of BeamPROP/FemSIM input files and compatabilty with all data files
• Specification of arbitrary doping and material composition (ex for graded junctions) profiles
Simulation Features
• Integration with BeamPROP & FemSIM mode solvers
• Internal Transfer Matrix and Ritz Iteration mode solvers
• Transverse and Longitudinal Multi-Mode competition
• Carrier dependent index variation
• Models for absorptive and scattering losses
• Advanced theoretical gain model for single and multiple quantum wells based on 8 band K·P band structure
computation
• Look-Up table based gain model to accomodate input from external models, such as the many body gain
database, or measured data
• Solution of lattice heat flow equation for self-heating effects
• Models for incomplete carrier capture by the quantum wells
• Nonlinear solvers for carrier transport
• Schroedinger equation eigenvalue solver for determining correct quantum well charge distribution
• Models for spontaneous, stimulated and non radiative carrier recombination
Analysis Features
• L-I curve
• I-V curve
• Run-time display
• Optical spectrum
• Carrier spectrum
• Near Field
• Far field
• Mode profiles
• Index profiles
• Modulation/Transient response
• Frequency response
• Current contours and vector plots
• Charge distribution
• Energy bands
• Wavefunctions
• Bandstructure
• Modal Gain/Loss
• Custom plots of simulation results as a function of bias condition
• Custom spatially resolved plots of simulation and output data throughout the device
• Custom plots of spectrally resolved data
In the following the physical modeling applied to different aspects of the laser simulation and user accessible parameters
are discussed in more detail. Optics, bandstructure calculation, gain models, carrier- and thermal transport are described
in designated sections.
Physical modeling in LaserMOD is based on the MINILASE II code, which is described in more detail in Ref. [1].
Results obtained using LaserMOD were published in Refs. [2,3]. A general overview of the theory and concepts
involved in the simulation of optoelectronic devices is given in Ref. [4].
The light propagation within a laser structure is determined by the solution of Maxwell’s equations. A set of
approximations has been developed, which reduces the computational effort with respect to the full solution for specific
cavity structures. Expanding the field in terms of eigenmodes, the slowly varying modal amplitudes are described by
photon rate equations. While the photon rate equation approach is universal, a selection of mode solvers offers
optimized performance for specific cavity types.
Optical simulations for edge-emitting lasers are typically separated into tranverse and longitudinal problems.
The first N (specified by user) transverse modes are the solutions of the scalar Helmholtz equation which is solved for
the largest eigenvalues via simultaneous iteration or BPM. This yields the 2D (or 1D) spatial field distribution of each
transverse mode. The superposition of these fields is then used to determine the nearfield pattern. Thermal perturbations
to the field are currently ignored.
An odd number (specified by user) of longitudinal modes, centered around the gain peak, are simple Fabry-Perot modes
determined by the cavity length, effective index, and wavelength. No longitudinal field distribution is currently
calculated.
The total number of separate rate equations (modes) considered in the simulation is then the product of the numbers of
transverse and longitudinal modes.
The optical modes are determined from the solution of the scalar Helmholtz equation (2.1) via simultaneous iteration,
∂2 ∂2
( )
+ + k02 ε ( x, y ) − neff , m Em ( x , y , z ) = 0
2
(2.1)
∂x 2
∂y 2
or from the paraxial wave equation via Beam Propagation Method (BPM):
∂2 ∂2 ∂u ( x, y, z )
( )
i
+ 2 + k 02 ε ( x, y ) − n 2 u ( x, y, z ) =
(2.3)
2k 0 n ∂x 2
∂y ∂z
E ( x, y, z ) = u ( x, y, z ) exp(ik0 n z ) (2.4)
The frequency ω0 with k0=ω0/c for which the mode is solved can be specified via the global symbol table parameter
mode_solve_frq in units of eV. If user specified the frequency is kept constant. By default, the frequency is selected to
correspond to the quantum well band gap energy. The refractive index with ε=n2, is a material parameter, which can be
adjusted by specifying kpmat_DIELOPT in the region symbol table or material file.
The temperature dependence of the refractive index is modeled in terms of a linear variation given by material
coefficients:
2
dn
ε (T ) = ε (300 K ) + r (T − 300 K )
(2.5)
dT
dnr
The coefficient can be adjusted via the material parameter kpmat_dnr_dT.
dT
If carrier dependent refractive index variations are selected via the appropriate checkbox in the laser simulation dialog
the quantum well refractive index accounts for the index variation induced by the carriers by performing a Kramers-
Kronig transformation of the gain spectrum.
The mode profile can be solved for once at the beginning of the simulation as governed by the checkbox “Recalculate
Mode” of the simulation dialog. If a carrier dependent refractive index model is requested by selecting “Carrier Dep.
Index” in the simulation dialog, the mode profile is updated for every bias point.
For VCSEL mode calculations a Transfer Matrix Method (TMM) is employed. While for 1D simulations the index
profile in propagation direction is given by the layer sequence, for cylindrical simulations (quasi 3D), the effective index
is computed for each numerical layer, by solving for radial and azimuthal modes. The field around a material interface
can be decomposed in for- and backward propagating plane waves. The boundary conditions for TE and TM waves at
the interface determine the coefficients in one layer as a function of the amplitudes in the prior layer. Written in matrix
form, the transfer matrix for the whole structure is given by the product of transfermatrices for the individual layers. The
eigenvektors are obtained by applying proper boundary conditions.
The refractive index outside the simulation domain can be adjusted via global parameters index_bc_right,
index_bc_left, index_bc_top, and index_bc_bottom for the indicated boundaries.
Optical field propagation and electro-thermal transport are coupled via rate equations for the intensity within each cavity
mode:
∂S m ,ω
1
= Gm ,ω −
S m ,ω + Rmspon
,ω , (2.6)
∂t τ m,ω
,ω = dV Em u (ω )
2
Rmspon (2.7)
c
Gm ,ω = dV Em g (ω ) .
2
(2.8)
neff , m
The losses entering the photon rate equation are the sum of contributions due to light leaving the cavity through the
facets, light scattered out of the cavity and absorptive losses
1 1 1 c
= + + αb , (2.9)
τ m ,ϖ τ mirror τ scatter neff ,m
Scatter losses can be adjusted in the global settings dialog box. The absorptive losses include free-carrier absorption
mechanisms such as inter valence band absorption. With coefficients ke/hfca, free-carrier absorption is modeled as a linear
function of the respective carrier densities:
α b = dV E m
2
(k e
fca
ne + k hfca nh + α 0 , ) (2.10)
The free-carrier absorption coefficients can be adjusted via the material parameters fca_elcoef and fca_hlcoef for
electrons and holes, respectively.
The Soref free-carrier absorption coefficients [15] include the additional index perturbation parameters fcn_elcoef and
fcn_hlcoef for electrons and holes, respectively. And the exponent for the hole concentration fcn_hlexp.
Quantum well barriers, cladding layers and other non-active regions in semiconductor lasers usually are designed to be
transparent at the emission wavelength as given by the effective bandgap of the active layer material. However, while
band to band absorption in such layers may vanish, band tail absorption due to phonon assisted transitions or due to
disorder induced localized states can lead to background absorption in real world semiconductors. These carrier density
independent absorptive losses are accounted for by α0. The constant background absorption α0 is determined by the
material parameter bg_absorption.
In order to model semiconductor quantum wells, the bandstructure has to be calculated via a KP perturbation theory
providing information about the density of states, as well as energy and strength of optical transitions. Currently
quantum wells are assumed to be square, and in the case of MQW’s, that they are uncoupled and identical.
The default model is an 8x8 band KP calculation with axial approximation. Band gap renormalization is determined via
self-consistent solution of the Poisson equation for the Hartree potential and approximative accounting for the exchange
potentials using a local density type of approach for a given carrier density in the well.
The bandstructure of quantum well carriers is calculated based on bulk material parameters using a KP method as
described in detail in Refs. [6,7,8]. An effective-mass equation is derived for the quantum well structure by considering
the barrier as a perturbation of the well material and defines an eigenvalue problem for the envelope wavefunctions:
2
k||2 2
∂ 2y
∂y
δ n , N En ( y ) +
−
+ PN ,n ( y ) k|| + ey
+ RN ,n ( y ) ψ n ( y ) = Eψ N ( y ) (2.11)
n 2m 2m i
On the diagonal of the matrix, the prabolic energy dispersion of the bulk bands of the quantum well material can be
found. Due to the confinement potential, coupling to other bands occurs, represented by non-vanishing momentum
matrix element Pn,m. It can be shown, that the renormalizations included in Rn,m are dominantly diagonal in the energy
bands [6,7].
In our 8x8 band KP method, one conduction and three valence bands are considered including the spin degeneracy.
Figure 1 shows a schematic illustration of a bulk bandstructure for AlGaAs. The bandgaps between different energy
bands at the gamma point are specified via the material parameters kpmat_G6C_G8V for the fundamental bandgap
between the lowes conduction band (En = E6c) and the highest valence bands (E8v), kpmat_G7C_G8V between the next
higher conduction band (E7c) and the highest valence band, kpmat_G8C_G8V between the conduction band E8c and the
highest valence band, and the gap kpmat_G8V_G7V between valence bands E8v (heavy and light hole) and E7v (split-off
band).
E8c P‘
E7c
Q
E6c
P
E8v
E7v
The temperature dependence of the bandgaps is described by a Varshni expression. The change of the bandgap with
respect to the reference temperature Tref, Tref = 300K if not stated otherwise, is described by:
T2 Tref2
Eg (T ) = Eg (Tref ) + A −A (2.12)
T+B Tref + B
The coefficients for the linear and quadratic behavior, A and B, can be specified for the corresponding bandgap via
parameters like kpmat_G6C_G8V_A and kpmat_G6C_G8V_B for the bandgap given by kpmat_G6C_G8V. The
Varshni coefficients for the other bandgaps are named correspondingly.
Besides the bandgaps, the offsets between conduction and valence bands of quantum well and barrier material play an
important role in determining the optical and transport properties. The material libraries offer two alternative ways to
specify these offsets. By setting for the hole affinity kpmat_HLAFF=HLAFF_DISCONT, the hole affinity is
calculated based on the specification of the band offsets. Via the parameter DEv_DEg_REF the valence band
discontinuity can be specified with respect to a reference material, by default GaAs, as specified by a reference bandgap
(Eg_REF) and a reference hole affinity (HLAFF_REF). The hole affinity is given by HLAFF_DISCONT =
HLAFF_REF + DEv_DEg_REF*(Eg-Eg_REF), as defined in the material libraries, where Eg is the minimum of
direct and indirect bandgaps. By selecting kpmat_HLAFF=HLAFF_INTERP in the material library, an interpolated
value is used for the hole affinity. The offsets then will result from the differences in hole affinities and bandgaps of
quantum well and barrier material.
where the linear (L), quadratic (Q) and cubic (C) coefficient can be adjusted via material parameters kpmat_MG6C_T,
kpmat_MG6C_Q and kpmat_MG6C_L. The heavy hole mass is given by kpmat_MHH, the light hole mass by
kpmat_MLH, and the mass for the split-off band by kpmat_MSO.
Strain leads to renormalization of the energy bands. As a function of the lattice constants of the strained crystal a with
respect to the reference unstrained material aref energy shifts due to shear forces,
c a − aref
δ Eshear = b 1 + 2 12
(2.14)
c11 aref
c a − aref
δ Ehydro = 2acv 1 − 12 (2.15)
c11 aref
occur as diagonal renormalizations in Equation (2.11). The axial deformation potential b can be adjusted via the material
constant kpmat_AXDEF. The hydrostatic deformation acv potential is accessible via kpmat_ACV. c11 and c12 are
elastic stiffnes constants, which are given by the material parameters kpmat_C11 and kpmat_C12, respectively. The
lattice constants are defined via the material parameter kpmat_LATT. A linear temperature dependence,
The off-diagonal elements in the effective mass equation are expressed in terms of momentum matrix elements P, P‘ and
Q. P describes the coupling between conduction and valence bands, via P‘ the conduction band is coupled to higher
conduction bands and Q describes the coupling of valence band and higher conduction bands. The diagonal elements in
the effective mass equation constitute renormalizations in the bandstructure. The momentum matrix elements can be
calculated from experimentally accessible quantities such as Lande factors and effective masses [6,7]:
m0 2m 2 P22 P12
2 P2′2 P1′2
− 1 = 20 + − − + 6 A′ (2.17)
mG 6C 3 E6c − E8v E6c − E7 v E8c − E6c E7 c − E6 c
g G 6C 2m P22
P12 P2′2 P1′2
− 1 = − 20 − − + + C′ (2.18)
g0 3 E6c − E8v E6c − E7 v E8c − E6c E7 c − E6c
Here, m0 and g0 are the free electron mass and Lande factor, respectively, mG6C is the mass at the gamma point as defined
by Equation (2.13), gG6C is the corresponding Lande factor as given by the material parameter kpmat_LANDE, A‘ and
C‘ are determined by the material parameters kpmat_CPRIME and kpmat_APRIME, the energy separation in the
denominators are defined in the bandstructure in Figure 1. Furthermore, the momentum matrix elements P and P‘ are
defined by:
2 δ− 2 δ−
P1 = P + P′, P1′ = P′ − P
3 E7 c − E7 v 3 E7 c − E7 v
(2.19)
2 δ− 2 δ−
P2 = P − P′, P2′ = P′ + P
3 E8c − E8v 3 E8c − E8v
The coefficient δ- can be adjusted via the material parameter kpmat_DELTAMINUS. The remaining coupling between
the higher conduction bands and the valence bands Q is entered directly via the material parameter kpmat_QQ.
In our implementation of the KP calculation, the Hermitian form of the effective mass equation is solved after Fourier
expansion in the y-direction, which is the growth direction of the heterostructure. The number of plane waves used in
this expansion is determined by the input parameter kpband_fourier_comps (=8 by default), which can be specified in
the physical data table of the quantum well region. Note, that this parameter significantly influences speed and accuracy
of the calculation. The resulting eigenvalue problem is solved for a grid of in-plane momentum vectors k|| as defined by
the maximum absolute value kploop_wavevec_max and the number of values kploop_wavevec_num, which can be
adjusted in the quantum well physical data table. The grid of in-plane wavevectors should cover the energy range given
by the electron and hole quantum well depth. For every in-plane wavevector the full subband spectrum is obtained.
Optical matrix elements are calculated for the TE or TM polarization direction, as has been selected in the gain
calculation dialog.
2.D. Gain
Gain is currently restricted to quantum wells regions. Besides a free carrier gain model, which is evaluated during
run-time, a table interface is in place allowing access to gain libraries. The database must include real and imaginary
parts of the gain and the spontaneous emission, for a range of carrier densities and temperatures (see appendix for
database file formats).
Neglecting interactions of carriers with other quasi particles of the semiconductor, the gain g and spontaneous emission u
can be written as:
The collision broadening is modeled through a truncated Lorentzian, which prevents unphysical absorption below the
bandedge.
∆E / 2
Li , j ( E ) = Θ ( E − Eg ) (2.22)
( ωi , j − E ) + ( ∆E / 2 )
2 2
The gain database allows the semiconductor laser simulator LaserMOD access to gain, refractive index, and photo-
luminescence spectra for semiconductor quantum wells, which are calculated by Nonlinear Control Strategies
(http://www.nlcstr.com/) using a sophisticated quantum many-body theory. The individual gain libraries are distributed
through Rsoft as optional modules for LaserMOD. Based on the information contained in the database, LaserMOD can
perform electro/thermal/optical simulations of semiconductor quantum-well lasers. The gain database can be selected as
an alternative to the built-in gain model of LaserMOD, providing several advantages in terms of reduced calibration
effort and increased predictive capability of the overall simulation.
The data within the database is grouped in a set of libraries providing spectra for different quantum well/barrier material
systems and target emission wavelength of the laser. Within a library the gain, refractive index, and photoluminescence
spectra are tabulated for varying wavelength, temperature, carrier density, alloy composition of quantum wells/barriers,
and quantum well width to allow the user to investigate variations in the active region design.
Comparison of measured photo-luminescence data with calculated spectra enables the user to characterize the sample in
terms of deviations from the nominal quantum well/barrier geometry and composition. Furthermore, the inhomogeneous
broadening indicating the amount of disorder present in the sample can be extracted for corresponding adjustment of the
calculated spectra for further simulations.
The many body gain model is selected by checking the corresponding box Look-Up Table Gain Modelin the laser
simulation dialog. The name of the library should be entered for the global symbol table_gain_material, for example
the library name InGaAs980nm. The library type, standard or custom, is entered for the global symbol
run_table_mode. For standard setting, an encrypted library is expected, while the custom mode enables use of other
gain data. Disorder induced inhomogeneous broadening of the gain spectrum can be accounted for by specifying a non-
zero value for table_gain_inhomog.
A methodology for carrier transport has been developed and established for silicon device simulation in multiple
dimensions that LaserMOD adapts for material systems common to semiconductor lasers, to describe electronic transport
through bulk regions, in which active layers may be embedded. The injection current into the active quantum well
region determines the carrier densities within bound quantum well states and therefore, the degree of inversion. For
carrier transport through bulk semiconductor regions the drift-diffusion system of equations is applied (carrier continuity
equations, Poisson’s equation). Optionally, a lattice heat equation can be coupled to describe self-heating effects.
Transport across hero-interfaces is facilitated via thermionic emission and, optionally, tunneling, allowing for bandgap
discontinuities.
Currently, a single 2D laser cross-section is rendered with rectangular semiconductor elements and electrodes. A
material system, alloy composition, and doping are selected for each. The cross-section is then digitized with a non-
uniform (Delauney) mesh. The transport equations are then solved via Gummel & Newton-Raphson iteration. No self-
heating, tunneling, or graded junctions are currently considered.
(
∇ε∇φ = q ne + nh − N D+ + N A− , ) (2.23)
where the charges are given by the densities of electrons ne, holes nh, and ionized donors ND+ and acceptors NA-. q is the
elementary charge. The static dielectric permittivity ε can be adjusted via the material parameter kpmat_DIELSTAT.
ND
N D+ = (2.24)
F − ED
1 + g D exp e !
k BT
NA
N A− = . (2.25)
E − Fh
1 + g A exp A !
k BT
The dopant degeneracy factors are typically gD=2 and gA=4. The activation energies for donors ED and acceptors EA are
material parameters, which can be adjusted via the material parameters ion_acceptoractiv and ion_donoractiv,
respectively. Fe/h are the Fermi energies for electrons and holes, respectively.
∞
2
n2 D ( y ) = ψ j ( y) g 2 D , j ( E ) f ( E )dE , (2.26)
j Em
2
d2
− − Ve / h ( y ) ψ j ( y ) = E jψ j ( y ) ,
(2.27)
2me / h dy 2
Here, the growth direction is assumed to be along the y-axis. The bound carrier densities are determined by integrating
over the occupation probability as given by the Fermi distribution function f(E) and the density of states g2D,j for subband
j, which results from the bandstructure calculation. me/h are the masses for electrons and holes, respectively. While the
bulk masses are material parameters, the masses for bound quantum well electrons and holes are determined from the
bandstructure as obtained from the KP calculation. The confinement potential for electrons and holes Ve/h contains
contributions due to offsets of conduction and valence bands as well as the electric potential. Additionally, carrier
density dependent bandgap renormalizations that are derived from a local density approximation for the Coulomb self-
In quantum wells, the total carrier concentrations is given by the sum of carriers in bound states and propagating
continuum states, ne/h = ne/h2D + ne/h3D. The bound carriers are the sum over individual subband contributions. In bulk
regions, the carrier densities are related to the Fermi levels by:
" "
± Fe / h EC /V ± Fe / h EC / V
3/ 2
m kT
n 3D
= 2 e / h B2
F1/ 2 = N Ceff/ V F1/ 2 (2.28)
2π
e/h
k BT k BT
where F1/2 is the Fermi integral of order one-half, Fe/h are the Fermi energies of electrons and holes, EC/V are the
conduction and valence bandedges. The prefactor defines the effective density of states for electrons and holes.
(
N Ceff/ V ' = N Ceff/V 1 − exp(−(d − d 0 ) 2 / λthermal
2
) ) (2.29)
The carrier concentrations obey continuity equations. In quantum wells, separate continuity equations are solved for
bound and continuum states, describing incomplete capture of carriers. Figure 2 illustrates the transport model. Capture
due to carrier-carrier and carrier-phonon scattering couples classical propagating bulk and quantum well continuum
states to quantum confined bound states. Carriers entering the quantum well in continuum states can pass through or get
captured into bound states. For sufficiently fast inter-subband scattering leading to thermalization between the subbands,
the occupation of the individual subband occupations can be described by a common Fermi level. This reduces the set of
rate equations to a four level system defined by effective rates and density of states, which are the sum of the subband
contributions.
∂ne2/Dh
q = ±∇J e / h,|| − qR dark − qR stim − qR spon,bound + qRecapture (2.30)
∂t
/h
∂ne3/Dh
q = ±∇J e / h − qR dark − qR spon ,bulk − qRecapture (2.31)
∂t
/h
Here, Re/hcapture are the capture rates for electrons and holes, Rdark is the non-radiative recombination rate, Rspon, bound and
Rspon, bound are the spontaneous recombination rates for bulk/continuum and bound carriers, and Rstim is the stimulated
recombination rate. Je/h and Je/h, || describe currents. For bound states, only carrier flux within the quantum well plane
indicated by || has to be considered, since the carrier distribution in the growth direction is determined by the
wavefunctions within the confinement potential.
Recapture
/h
,cc
= dE dE ' g e3/Dh ( E ) g e2/Dh ( E ' ) ×
(2.32)
× (s ecapture
/h
,cc
( E , E ' ) f e3/Dh ( E )(1 − f e2/ Dh ( E ' )) − s eescape
/h
,cc
( E , E ' )(1 − f e3/Dh ( E )) f e2/ Dh ( E ' ) )
Recapture
/h
, ph
= dE dE ' g e3/Dh ( E ) g e2/Dh ( E ' ) ×
(
× s ecapture
/h
, ph
( E , E ' )(n ph + 1) f e3/Dh ( E )(1 − f e2/ Dh ( E ' )) − s eescape
/h
, ph
( E , E ' )n ph (1 − f e3/Dh ( E )) f e2/ Dh ( E ' ) )
(2.33)
Due to emission and absorption of longitudinal optical (LO) phonons, capture due to phonon scattering allows
continuum states to interact with energetically non-resonant bound states. In contrast, energy is conserved in Coulomb
scattering processes. The phonon occupation number is given by:
−1
ω LO
n ph = exp −1
(2.34)
k B Tlatt
Here, ωLO is the LO-phonon frequency, which can be specified via the material parameter regmat_hnuloph.
Auger Recombination
The non-radiative recombination Rdark occurs in both bulk and quantum well regions. The rate is the sum of
contributions due to Auger and Shockley-Read-Hall (SRH) processes. In the Auger process an electron and hole
recombine while the corresponding energy is transferred to an additional electron or hole. The Auger recombination is
modeled by:
(
R Auger = C eAuger n e + C hAuger n h n e n h − n i2 )( ) (2.35)
Here, ni is the intrinsic carrier density. The Auger coefficients are temperature dependent with:
1 1
C Auger
e/h (T ) = C Auger
e/h (300 K ) exp − E Auger , act
e/h −
! ! (2.36)
k B T k B 300 K
The room temperature Auger coefficients can be adjusted via the material parameters regmat_Augn300 and
regmat_Augp600 for electrons and holes, respectively. The temperature dependence is characterized by an activation
energy Ee/hAuger,act, which is accessible by setting the material parameters regmat_AugnEact and regmat_AugpEact.
The Auger recombination model can be activated via the designated checkbox in the laser simolation dialog.
Shockley-Read-Hall Recombination
The SRH process describes recombination via trap levels. In LaserMOD the corresponding rate is modeled by:
The lifetimes τnSRH and τpSRH for electrons and holes can be adjusted via the material parameters regmat_SRH_taun and
regmat_SRH_taup, respectively. The trap occupations ne/htrap are given by:
"
± Etrap EC / V
/ h = N C / V F1 / 2
netrap eff
(2.38)
k BT
The trap energy Etrap is a material parameter, which can be set with respect to the valence bandedge by specifying
regmat_Et-Ev300. The SRH recombination model can be actvated via the designated checkbox in the laser simulation
dialog.
ne nh − ni2
R interface − SRH = (2.39)
1
vhinterface-SRH
(n
e +n trap
e )+ v 1
interface-SRH (n
h +ntrap
h )
e
The interface recombination velocities ve/hinterface-SRH can be adjusted via the material parameters ifrec_vn for electrons
and ifrec_vp for holes. The trap occupation is computed using Equation (2.38) using a trap energy Etrap as specified for
the material parameter ifrec_Et-Ev300. In order to determine which model settings to use for a given interface between
at least two different materials, a priority can be assigned to individual regions by assigning an integer value to
ifrec_priority.
Spontaneous Recombination
Radiative recombination processes include spontaneous and stimulated recombination. With Z(ω) being the photon
spectral density of states, the spontaneous recombination can be written as:
where U is the photo-luminescence or spontaneous emission spectrum. While in quantum wells, the photo-luminescence
can be derived from the optical matrix elements known from the bandstructure calculation, in bulk regions and for
continuum states, a simpler approximate expression is used:
The Einstein coefficient B is a material parameter, which can be adjusted via regmat_sponrecoef.
Stimulated Recombination
Above laser threshold, stimulated emission is the dominant radiative recombination channel. The stimulated
recombination is given by contributions due to photon emission into individual cavity modes (m,ω):
c
R stim = g (ω )
2
S m,ω E m (2.42)
m ,ω neff ,m
Here, g(ω) is the gain spectrum determined by a built-in gain model or tabulated data via the gain table database
interface (see section 2.D.).
Here, De/h is the diffusivity, µe/h is the mobility and Pe/h is the thermoelectric power of electrons and holes, respectively.
Under non-isothermal conditions, as in self-heating simulations, an additional contribution to the current occurs due to
temperature gradients. For Fermi statistics, the diffusivity is related to the carrier mobility via a generalized Einstein
relation:
"
± Fe / h EC / V
F1/ 2
De / h k BT k BT
= (2.44)
µe / h
"
q ± Fe / h EC /V
F−1/ 2
k BT
Different models can be selected for the carrier mobility via the global integer parameters el_lowfield_mobility and
hl_lowfield_mobility. In a similar way, the behavior of the mobility in high electric fields can be selected via the global
integer parameters el_highfield_mobility and hl_highfield_mobility. The mobility is written as:
µ e / h = µ eHF
/ h ( E , µe / h )
$
LF
(2.45)
where the high-field mobility is a function of the low-field behavior and the electric field for electrons and holes,
respectively.
δ 0,e / h
T
µ LF
e/h = µ 0,e / h ! (2.46)
300 K
The exponent δ0,e/h is given by the material parameters kpmat_MOBN0_exp / kpmat_MOBP0_exp, while µ0,e/h is
determined by kpmat_MOBN0 / kpmat_MOBP0 for electrons / holes. The temperature dependence is mostly induced
by increased phonon scattering for increased temperature, leading to exponents, which are smaller than zero for most
materials.
+ ,
δ 0,e / h + ,
δ dop ,e / h
T 0. T 0.
µ 0,e / h − µ dop ,e / h
- -
+ ,
δ dop ,e / h / /
T . 300 K 300 K
µ = µ dop ,e / h
-
LF
/ 0 + % &
δ
(2.47)
T ( α ,e / h
e/h
300 K '
+ ,
αe / h ) *
- . 300 K
- .
N dop
1+ -
+ ,
δ ref ,e / h
.
- .
- - T 0. .
/ N ref ,e / h / 0
300 K
Here, Ndop = NA + ND is the total doping concentration. The maximum mobility µ0,e/h and corresponding exponent for the
temperature dependence are defined and adjustible as described in the temperature dependent mobility model above. For
increasing doping, the mobility approaches the value as given by the minimum mobility µdop,e/h, which can be adjusted
via the material parameters arora_elmudop / arora_hlmudop for electrons and holes, respectively. The temperature
dependence of this minimum mobility is characterized by exponents δdop, e/h that are accessible by specifying
arora_elmudopexp and arora_hlmudopexp. The exponent αe/h and its exponent δα, e/h are accessible via the material
parameters arora_eldopexp1 / arora_hldopexp1 and arora_eldopexp2 / arora_hldopexp2. The reference doping
µ eHF
/ h ( E , µe / h ) = µe / h
$
LF LF
(2.48)
for settings el_highfield_mobility = 0 / hl_highfield_mobility = 0. A common model for the highfield behavior of the
electron and hole mobility is given by:
7
µeLF/ h
µ eHF
/ h ( E , µe / h ) =
LF
1 2 (2.49)
7 βe / h
3 µ LF
E 4
βe / h 1 + 3 e/h
4
5 6
vsat ,e / h
This model can be selected by setting el_highfield_mobility = 1 / hl_highfield_mobility = 1. The saturation velocity
vsat,e/h for electrons and holes is modeled using:
vsat ,e / h (300 K )
vsat ,e / h (T ) = (2.50)
a T
(1 − asat ) + sat
300 K
The saturation velocity at 300K can be adjusted via the material parameters hfmob_elvsat and hfmob_hlvsat,
respectively. The temperature dependence coefficient asat can be adjusted via the parameters hfmob_elvsattemp and
hfmob_hlvsattemp. The exponent βe/h in Equation (2.49) is accessible via parameters hfmob_elexp and hfmob_hlexp.
In compound semiconductors, the electron mobility may exhibit a local maximum at high electric fields. If this regime is
of interest, the following model may be selected for the respective carriers by setting el_highfield_mobility = 2 /
hl_highfield_mobility = 2:
vsat ,e / h E $
µ eLF/ h + 3
E
µ eHF
/ h ( E , µe / h ) =
$
LF
HF ,e / h
4
(2.51)
E
$
1+
EHF ,e / h
Material Interfaces
While the electric potential is continuous at material interfaces, leading to a Dirichlet boundary condition, different
physical effects have to be considered for the carrier transport. Due to band discontinuities ∆EC / V electrons and holes
might encounter an energetical barrier. Carriers with kinetic energy exceeding the barrier height are described via
thermionic emission. With A and B indicating wide and narrow gap materials, the current is given by:
1 2 1 2
8 9
2
k m *
: 3 Fe / h , A − EC / V , A 4 3 Fe / h , B − EC /V , B − ∆EC /V 4 ;
J e / h , A−> B = B e/h
exp 5 − exp 5 (2.52)
2π 2> 3 < 6 6 =
k BT k BT
where m*e/h is the carrier mass in the higher bandedge material. For carriers with insufficient energy to cross the
interface may underly quantum mechanical tunneling. A simple approach accounts for tunneling by reducing the barrier
height as a function of the electric field to reflect increased tunneling probability for increasing electric field strength:
Here, λtunnel is the effective tunneling length, which is adjustible via the material parameter eff_tunnel_length, Ensurf is
$
$
the projection of the electric field onto the surface normal at the interface. The integer parameter eff_tunnel_priority is
used to govern the precedence of the regions in determining which parameters are used for evaluating the model. The
use of the tunneling model can be selected by setting run_barrier_lowering = 1 in the global symbol table.
Due to carrier-phonon scattering part of the electronic energy may be transferred to the crystal lattice leading to an
increase of the lattice temperature. In LaserMOD a lattice heat flow equation can be solved to describe self-heating
effects:
? @
B ∂T
A
C
3
CL + k B (ne + nh ) D
2 ∂t
(
= ∇ κ L∇T − SE e − SE h + H ) (2.54)
Here, CL = cL ρ is the heat capacity of the lattice, which is the product of specific heat and material density as given by
the material parameters regmat_specific_heat and regmat_material_density. If activated by selecting the check box in
the laser simulation dialog, the heat flow equation determining the temperature profile within the device is solved self-
consistently with the carrier transport.
δκ L
T
κ L (T ) = κ L (300 K )
, (2.55)
300 K
where the thermal conductivity at 300K and the exponent δκ L can be adjusted via the material parameters
regmat_thermconduct and regmat_thermconduct_exp, respectively.
Energy Flux
The electron and hole energy fluxes are given by:
Se / h = Pe / hTJ e / h − κ e / h∇T
F
$ $ (2.56)
The thermal conductivities of the electon and hole gas are determined by:
κ e / h = ne / h k BT µ e / h Pe / h (2.57)
Heat Sources
H in Equation (2.54) is the sum of different heat source contributions,
H Joule = −
1
q
(
J e ∇Fe + J h∇Fh
$ $ ) (2.59)
recombination heat,
and an additional heat production rate originating from the transient modulation of the carrier concentration:
For elec_thermboundary = cauchy in the physical symbal table of the electrode, a Cauchy type boundary condition is
imposed at the contact:
Gthermal
(T − Tcontact )
G
κ L n∇ T = (2.63)
A
Here, nH is the surface normal at the contact, A is the contact surface area, Gthermal is the heat conductance associated with
the electrode and Tcontac, as specified by elec_temperature in the physical data table of the electrode, is the temperature
of the heat sink. Thermal properties of regions, which are not included in the simulation domain, can be lumped into the
thermal conductivity parameter, which can be specified via elec_thermconduct in the physical data symbol table of the
corresponding electrode region.
References
[1] Grupen & Hess, IEEE JQE, vol. 34, no. 1, Jan. 1998, pp.120-40, including corrections in IEEE JQE, vol. 34, no. 21,
Feb. 1998, p. 384.
[2] B. Grote et al. “Quantum-Well Laser Diodes: Temperature and Many-Body Effects”. In: Advanced Simulation and
Analysis of Optoelectronic Devices, ed. J. Piprek (2004).
[3] B. Grote et al. “Integration of microscopic gain modeling into a commercial laser simulation environment”. In:
Physics and Simulation of Optoelectronic Devices XI Proc. SPIE, vol. 4986, ed by M. Osinski, H. Amano, P. Blood, pp.
413-422 (2003)
[4] J. Piprek: Semiconductor Optoelectronic Devices (Academic Press 2003).
The main CAD window is a laser cross-section editor that allows the placement of rectangular elements, though the
interior of each rectangle can be profiled in several ways. There are eight types of elements: bulk semiconductor, bulk
insulator (oxide), bulk active, taper between 2 bulk materials, (multiple) quantum well/barrier active, (bulk) DBR stack,
electrode (electrical/thermal boundary condition), and an optical grating (treated as bulk with respect to its electro-
thermal properties). Elements are placed by opening a file, selecting the appropriate element type button (draw mode),
and then using the mouse to frame an area of the window that the element will fill. Note that the electrode element has a
default height of 0.1 µm when it is first placed, and that the QW element thickness will adjust automatically once the
well, barrier, and SCH thicknesses are chosen. The DBR element will likewise update its own size based on the layer
thicknesses and number of periods chosen. The optical grating will show 2 periods by default.
The quantum well element is comprised of separate material systems for the barriers/SCH and well(s). The DBR region
is composed of two layers, one each for the "high" and "low" sections of the grating period, as is the optical grating
element. Bulk semiconductor, insulator, and active elements each consist of a single material. Specific material
parameters and local grid properties are separately adjustable for each element, by right mouse clicking on that element.
Global parameters are also available, as is a complete set of default values.
In the client drawing area, the user defines the cross-section of the laser. In the case of FP edge emitters, this cross-
section is the (X-Y) plane perpendicular to the lasing axis, and for VCSELs, it is the (R-Y) plane that forms the
cylindrical diameter of the device (note that the R variable is still identified as X in the status bar). Finally, for DFBs and
other longitudinal structures the X direction is the lasing direction and the lateral (ridge width for example) direction of
the device is in/out of the screen.
Under File:
New This option creates a new layout.
Open This option opens an existing layout.
Import This option opens an existing layer file. (See Appendix B)
Save This option saves the current layout.
Save As This option saves all open layout.
Close This option closes the current layout
Close All This option closes all open layouts.
Print This option prints the current layout.
Printer Setup This option sets printer related parameters.
Exit This option exits from the CAD interface.
Under Edit:
Undo (Ctrl-Z) This option reverses the last change made to the layout .
Cut (Ctrl-X) This option moves any selected regions from the layout to the clipboard.
Copy (Ctrl-C) This option copies any selected regions from the layout to the clipboard.
Paste (Ctrl-V) This option pastes the contents of the clipboard into the current layout.
Delete (Delete) This option deletes selected regions form the layout.
Duplicate This option creates duplicates of any selected regions in the current layout.
Select All This option selects all regions in the current layout.
Edit Symbols This option allows the user to edit the Global Symbol Table, where new
variables may be defined and edited.
Edit Bias Table This option allows the user to edit the Bias Table, where electrode current
and voltage ranges are determined for the simulation.
Edit Material File This option allows the user to edit any of the systems in the material library.
Under Options:
Global Settings This option allows the user to edit the global layout settings.
Under Run:
Tile Regions This option tiles the regions, according to their references, to fill the domain
.
Generate Mesh This option generates a Nonuniform Delauney Mesh for the current layout.
Generate Profile This option allows the user to generate parameter profiles for the current
layout..
Mode Calculation This menu allows the user to compute the modes and optical spectrm of the
current layout.
Gain Calculation This option allows the user to compute the gain spectrum, of the quantum
wells, for different temperatures and densities.
Simulate Laser This option allows the user to perform a complete laser simulation, and
generate the LIV characteristics and transient response of the current layout.
Scan Variable This option allows the user to perform multiple simulation (gain, mode,
laser, plot) while varying some parameter.
Under Graph:
View This option opens WinPLOT, RSoft’s plotting program.
Close All This option closes all open WinPLOTs.
Launch Data Browser This option opens the RSdataBrowser for convenient viewing of all plots.
Launch Sim Window This option opens a plot using the Simulation Window which provides
additional plot information such as FWHM and confinement factor.
Generate Plot This option allows the user to generate a variety of standard and custom plots
from the resulting simulation data.
Under Utility
Parasitics This utility allows the user to account for chip and packaging parasitics and
their affects on the frequency response of the current layout.
Under Help
Online Help This option opens the online manual.
About LaserMOD This option opens the Help About dialog box, which contains current
version, copyright, and hardlock key information.
New Circuit
This option creates a new layout (same as File Menu option).
Open Circuit
This option opens an existing layout (same as File Menu option).
Save Circuit
This option saves the current layout (same as File Menu option).
Select Mode
This option allows the user to select regions in the CAD window using the
mouse.
Zoom Mode
This option allows the user to zoom in/out in the CAD window. To zoom
in, simply click the left mouse button. To zoom out, either right click in
the CAD window, or left click and press the Shift key.(same as View
Menu options)
Bulk
Setting this option, when adding a region, will cause that region to be a
Semiconductor
bulk semiconductor.
Bulk Insulator
Setting this option, when adding a region, will cause that region to be a
bulk insulator.
Bulk Active
Setting this option, when adding a region, will cause that region to be a
bulk active region.
Bulk Taper
Setting this option, when adding a region, will cause that region to have a
taper comprised of two bulk materials.
Quantum Well
Setting this option, when adding a region, will cause that region to be a
(multiple) quantum well.
DBR Stack
Setting this option, when adding a region, will cause that region to be a
DBR stack.
Electrode
Setting this option, when adding a region, will cause that region to be an
electrode.
Optical Grating
Setting this option, when adding a region, will cause that region to be an
index grating for optical and bulk for electro-thermal properties.
Edit Global
This option allows the user to edit the Global Settings (same as Options
Settings
Menu option).
Edit Symbol Table
This option opens the Symbol Table where the user to create new variables
and modify existing variables. (same as Edit Menu option).
Edit Bias Table
This option allows the user to edit the Bias Table, where electrode current
and voltage ranges are determined for the simulation (same as Edit Menu
option).
Edit Material File
This option allows the user to edit any of the systems in the material
library (same as Edit Menu option).
Tile Regions
This option tiles the regions, according to their references, to fill the
domain library (same as Run Menu option).
Generate Mesh
This option generates a Nonuniform Delauney Mesh for the current layout
(same as Run Menu option).
Generate Profile
This option allows the user to generate parameter profiles for the current
layout. (same as Run Menu option).
Calculate Mode
This menu allows the user to compute the modes and optical spectrm of
the current layout (same as Run Menu option)
Calculate Gain
This option allows the user to compute the gain spectrum, of the quantum
wells, for different temperatures and densities (same as Run Menu option).
Figure 3-4: The Status Bar can be found in the bottom portion of the CAD window.
Selecting
To select one or more elements, simply move the cursor over the element and click on the left mouse button. Additional
elements can be added to (or removed from) the selection by holding down the Shift key while left mouse clicking over
the new element. When the Shift key is held down, clicking on a component toggles its selection state without affecting
other components, otherwise a new selection is initiated as in the first example. Furthermore, once one element is
selected, others can be selected in sequence by using the up/down arrow keys.
Selecting one or more elements can also be done positioning the arrow cursor at the upper left corner of an imaginary
rectangle that completely surrounds the desired components, and press but do not release the left mouse button. Now
move the mouse to the lower right corner, until the blue rectangle that is being rubberbanded encompasses the desired set
of components, and release the mouse button to complete the selection.
Deselecting
Selected elements can be deselected by moving the cursor to an unoccupied area of the layout window and clicking on
the left mouse button.
Moving
Once one or more elements has been selected, they can be operated on in several ways. To move the selection, place the
cursor over any one of the elements in the selection, and press but do not release the left mouse button. The selection
can now be dragged to the desired location by moving the mouse while holding down the left mouse button as usual
Resizing
To resize or scale the selection along a particular direction, simply grab the corresponding handle (highlighted block dot
on edge of selected item) in any one of the selected elements and move it to the desired position. The selection is then
redrawn to reflect the new size.
Canceling
During the motion or rubberbanding phase of any of the above mouse procedures, clicking on the right mouse button or
pressing ESC before releasing the left mouse button will cancel the operation in progress (as in the case of the drawing
procedures discussed in the previous section).
Mesh Optimizer
An additional feature of the grid generator is its ability to reduce the density of gridpoints in regions where they are not
needed. For example, a vertical heterojunction may be formed in a ridge structure, and an unoptimized mesh would
place many gridline along this junction that would extend into the substrate to the edge of the simulation domain. The
optimized grid would terminate these gridlines with triangles, so that the gridline density in the substrate, where physical
parameters do not vary that much, would be reduced (See Fig. 3.5). This feature is enabled in the Global Parameters
dialog, by setting the # of Optimizations to a nonzero integer value.
All material parameters are stored in library files, which are selected via the Material System pulldown list in Material
Data Dialog. A set of files for standard material systems are provided with the software, but these may be edited and
saved as new files. Provided they are saved in the \rsoft\products\lasermod\materials subdirectory, which is created at
installation. These new files will then appear automatically in the pull-down list, and be available for use.
The following additional information is also required by the program, and is selected from the Material Data Dialog.
• Alloy X composition is the stoichiometric parameter X in ternary/quarternay compounds.
The profile definition dialog facilitates the specification of spatially varying profiles on top of the constant background
as specified in the material data dialog. Multiple profiles can be defined and scrolled through by setting an integer for
Number or by increasing/decreasing using the arrow buttons. The profile type can be selected via a pull-down menu.
Predefined types can be selected and their parameters can be set using amplitude and scale factor fields. Alternatively, a
custom expression can be entered. The specified profile can be added or existing profiles removed from the list using the
designated buttons.
The resulting profile can be written as:
P( x, y ) = P0 + F1 ( x, y ) ⊕ F1 ( x, y ) ⊕ ........ ⊕ FN ( x, y ) (3.64)
Here, P0 is the constant offset, Fi are added profiles. The operator, ⊕ , is selected in the pull-down menu for merging of
the profiles.
The following predefined profiles are available and can be applied to the x or y-direction:
• Constant: F ( x) = a
• Linear: F ( x) = a ( sx)
• Trapezoid: F ( x) = 1 if x is within xo of center, else F ( x) = a ( sx)
• Parabolic: F ( x) = a(1 − ( sx) 2 )
• Gaussian: F ( x) = a ∗ exp(− ( sx) 2 )
• Error function: F ( x) = a ∗ erf ( sx)
x=2
(x′ − x′min ) −1
(xmax ′ )
′ − x min
Where "a" represents the profile amplitude (in units of the background) and "s" represents the scale factor. "x0"
represents the normalized local origin within the region, so that x0=0 is in the center and x0=+/-1 is at the max/min edge,
respectively. Corresponding expressions are used for the y-direction.
Physical Data
All region parameters, are accessible via the Phys. Data buttons in the Material Information section of the Element
Properties dialogs. Each brings up the local Symbol Table for the region (see Fig. 3.8). Parameters defined in these
local tables are only recognized by the table in which they are defined. Parameters defined in the global Symbol Table
(accessed from tool bar or pull-down menus) are available to all local tables. Only non-default values are visible in the
table. Non-default values in these tables will override their corresponding values in the material library. This allows the
user to change any material parameter, region by region, without having to create any additional material library files.
All regions have a single Physical Data table, except for the quantum well region, which has two; one for all the wells
Taper Definition
If the bulk region has a Taper, then the Taper Definition Dialog will be enabled (Fig. 3.9). This provides an additional
Set Material and Physical Data Table, essentially for the material comprising the exterior of the taper, while the primary
material comprises the interior of the Taper. The entire taper fills the region and is constructed from smaller rectangular
bulk regions, each of which will be simulated on the self-consistent electro-thermal and optical mesh. So, a taper will
substantially increase the number of nodes in the simulation, but may be used to easily render cross-sectional shapes that
would otherwise be difficult to construct by manually placing rectangles.
The following tapers are available and can be applied to just the left side, right side, or both sides:
• Linear: F ( x) = x
• Power: F ( x) = x a
• Ellipse: F ( x) = sqrt (1 − a(0.5 − φ ) 2 )
• Lens: F ( x) = sqrt (R 2 − a(0.5 − φ ) 2 ) , where R=radius
• Custom expression: F(x), is a function of the variable “x” where both x and F are between 0 & 1. The
expression is entered in the designated box, which is enabled for this option.
The Material Files button brings up an Open File dialog that displays the list of available material files in the library.
Selecting one, opens that file with the Material file editor, shown in Fig. 3.10. This is a Symbol Table containing all the
material parameters used by the program. The files included with the software contain standard interpolation formula for
ternary, AXB(1-X)C and quarternary AXB(1-X)CYD(1-Y) compositions. X and Y are updated automatically by the program so
that the correct values for the specified alloy are used in the simulation.
The quantum well region allows for convenient input of a multiple quantum well stack. The corresponding properties
dialog provides for entering additional information that has to be specified to facilitate generation of the desired
geometry:
• Number of quantum wells
• Well Thickness
• Barrier Thickness
• SCH Thickness (first and last barrier in the region)
Since the quantum well region consists of well and barrier material, two sets of material specification dialogs and
physical data symbol tables are provided for.
Furthermore, there are a few additional quantum well region parameters currently accessible only through the Physical
Data table, that are associated with the KP calculation. The quantum well parameter, “filkp”, defaults to “auto” and will
automatically call the KP band calculation on the quantum well region each time the laser simulation is performed. To
reduce computation time, the following files are saved in the workspace directory for the current problem:
• ome.dat
• dos.dat
• kp.in
These files will not be recalculated unless the quantum well parameters have changed. This option should only be
changed from “auto” if an appropriate set of the above files is provided by the user.
The Quantum Well Properties Dialog also contain Help buttons that brings up this section and the material help sections
of the OnLine manual directly.
Similar to quantum well regions, two materials constitute a DBR region. Alternating layers of the two selected materials
form highly reflective mirrors for a VCSEL cavity. Material settings and physical data symbol tables exist twofold and
can be accessed by selecting the corresponding buttons.
To specify the DBR the following information has to be provided:
• Number of periods of the DBR stack (a non-integer value causes an additional half period of layer 1 to be
added to the stack).
• Thickness of layers 1 and 2, where layer 1 designates the material of the bottom layer of the stack, and
layer 2 designates the top (unless a non-interger is specified for # of periods)
Two simulation modes are possible for DBR regions, governed by the checkbox DBR for Index Only:
• Full Simulation
The DBR region is treated like a stack of bulk regions and meshed accordingly. This mode simulates the
full electronic and, if selected, thermal properties of the DBR in addition to the effect of the index profile
on the optical modes.
• Optical Only
The DBR index profile is accounted for in the calculation of the optical properties. To drastically reduce
the computational effort, the electrical (and thermal) part of the simulation is performed on an effective
bulk region. By eliminating all inner interfaces of the DBR for the transport part, the number of mesh
points can be reduced. These bulk material properties are determined from either the top or bottom layer
material, as selected via the radial button (which is enabled when the Index DBR box is checked).
The DBR Properties Dialog also contains Help buttons that brings up this section and the material help sections of the
OnLine manual directly.
Similar to the DBR region, two materials constitute a Grating region. The grating is formed at the interface between
these two materials and its shape is determined by selecting a profile from the Grating Profile pull-down list and
setting the Period and Left Facet Phase. The number of periods and the right facet phase are then both
determined by the width of the region. Certain profiles require an additional parameter, which is enabled as needed. For
the Square, Trapezoid, and V-Groove profiles this extra parameter is the Duty Cycle, and for the Lens profile it is the
Radius. Material settings and physical data symbol tables exist twofold and can be accessed by selecting the
corresponding buttons.
The grating is for the index profile only, i.e. just calculation of the optical properties. The electrical (and thermal) part of
the simulation is performed on an effective bulk region. These bulk material properties are determined from either the
top or bottom layer material, as selected via the radial button.
The following profiles may be selected for the grating:
• Sin: F ( x) = sin(φ )
JLK 1, φ < DutyCycle
• Square: F ( x) = I
0, φ > DutyCycle
• Sawtooth: F (x) = φ
JLK aφ , φ < 0.5
• Triangle: F ( x) = I
a(1 − φ ), φ > 0.5
1 M
M
• Ellipse: (
F ( x) = sqrt 1 − a(0.5 − φ ) 2 )
• Lens: F ( x) = sqrt (R 2
− a(0.5 − φ ) 2 )
• Custom expression: F(x), is a function of the variable “x” where both x and F are between 0 & 1. The
expression is entered in the designated box, which is enabled for this option.
The Grating Properties Dialog also contains Help buttons that brings up this section and the material help sections of the
OnLine manual directly.
3.G. Electrodes
The typical laser and simulation parameters are set in the Global Parameters Dialog (Fig. 3.15). This dialog appears
automatically when a new file is created, or whenever the appropriate toolbar button or pulldown menu option is
selected. All the following parameters may also be accessed via the Global Symbol Table.
Structure Options
• Simulate Half the domain in X (device symmetric about YZ plane at X=0)
Grid Options
• # of Grid Optimization (0 for no optimizations)
• Show Structure allows plot data to be overlayed on top of the device structure
• 4 global spacing parameters are used whenever Use Defaults is selected for the local mesh properties.
Finally, the Global Parameters Dialog contains a Help button which brings up this section of the OnLine manual directly.
As stated, the LaserMOD interface is fully parametric. Meaning that variables may be defined and assigned values, or
expressions of other variables (see Appendix B. for built in expressions). While the dialog boxes give the User access to
the built-in variables, custom variables may be defined via any of the Symbol Tables. The master table, in which
variables are seen by all other tables, is called the Global Symbol Table (Fig. 3.16), and is invoked from the Symbol
Table toolbar button, or the Edit/Edit Symbols pull-down menu. Variables defined in this table may also be used in most
of the dialog boxes (edit controls), in place of fixed values.
The Bias Table is accessible from various places in the interface, the toolbar, pull-down menus, and buttons within other
dialogs. When invoked the Dialog in Fig. 3.17 appears. Bias points can be added deleted and individual simulation
point parameters can be adjusted via the Advanced Table (Fig. 3.18).
Data
When a bias point is selected, its data appear in the controls at the top of the dialog. Likewise, the advanced table that
will be shown when the Advanced button is clicked will be specific for that point.
• Bias # identifies this point so that simulation results can be indexed and plots generated on a point by point
basis.
• Elec # is the number of the electrode to which this bias is being applied. This number must match the
electrode number set in the Element Properties dialog for that electrode. (see section 3.G.)
• Value is the applied bias in mA or V.
• Value of incident light, in the case of PD/Solar Cells, is in mW/cm2.
• Current/Voltage sets the type of bias
• The number of intermediate points (ramp points) for the bias point
• The maximum number of iterations for convergence
• Time Dep. selects between steady state and transient response. Typically several points together make up a
usable transient response, Lo-Hi-Lo for example
• The edit boxes just below the Time Dep. are for the # of time steps and the size of the time step in ps,
respectively [t = N * dt (ps)].
The Advanced symbol table, which is associated with each individual bias point, contains additional data specifying
simulation options and numerical settings. Furthermore, some global settings can be overridden for individual bias
points.
Bias Ramp
Specification of a bias ramp facilitates the set up of a sequence of bias points in a convenient way. Furthermore, use of
the bias ramp invokes a prediction algorithm improving convergence and speed. Convergence problems or diverging
behavior is detected and handled by a strategy of step size reduction. In addition to the specification of parameters
needed for a single bias point, the number of steps (to achieve the requested target voltage/current) or the
(voltage/current) step size can be selected using the parameter n_steps or step_size, respectively, in the bias table
advanced dialog.
Guidelines
• Each electrode present in the circuit must have a zero voltage value bias point listed at the beginning of the
table.
• Activating all the points in the table is done by setting bias point 0 to RUN.
• Bias values need to be chosen judiciously to allow the simulation to converge, i.e. sufficiently small steps
between points.
Finally, the Bias Table Dialog contains a Help button which brings up this section of the OnLine manual directly.
The Generate Profile dialog (Fig. 3.19) allows a parameter to displayed on the spatial grid that digitizes the structure.
This useful to verify that the geometry and material parameters have been specified correctly, and should be performed
after setting the grid and before simulation. Currently, index, doping, and mole-fraction profiles can be generated and
visualized through this dialog. Note, that for visualization a uniform grid is used, which can be adjusted by specifying
the number of points in x- and y-direction. There is also a checkbox for saving the index profile for later use by the
Optical DBRs. This ensures that the Optical DBRs will have the same index profile as regular DBRs.
All profile data is stored in a workspace subdirectory, which is prefixed by a User specified name. This run prefix will
be referred to whenever the Plot Generator is called. The default prefix is "tmp".
Finally, the Generate Profile Dialog contains a Help button, which brings up this section of the OnLine manual directly.
For Fabry-Perot lasers, currently there are three mode solvers available in LaserMOD. The first is a scalar Helmholtz
equation direct matrix method based on Ritz subspace iteration, the second is a BPM (Beam Propagation Method) based
mode solver that can calculate the scalar or vector modes of the waveguide crossection, and the third is the FEM (Finite
Element Method) for 2D F-P lasers.
The Ritz iteration method uses the non-uniform mesh as specified for the transport problem. While interpolation issues
for the underlying index profile are avoided, additional constrains might be imposed on the non-uniform mesh in order to
resolve the mode. The global parameter ritzit_nitvec determines the number of basis vectors used in the subspace
iteration. By default, the parameter exceeds the requested number of lateral eigenmodes by 5. If the mode solve fails,
this number should be increased.
The BPM method operates on a uniform mesh, which can be adjusted independently by setting the number of grid points
in the different directions in the appropriate boxes of the mode calculation dialog. Additionally, the BPM technique may
require adjustment of the compute step, or the tolerance for the effective index Neff used to determine convergence. The
index profile is automatically calculated if BPM is selected, and, it can be determined from this index plot, whether the
Calculation of the material gain for the quantum well or bulk active region may be achieved through this dialog (Fig.
3.21), accessible from the toolbar or Run/Gain Calculation pull-down menu. Single or multiple density or temperature
points may be tabulated in a single sweep. Select which of these parameters you wish to vary, its starting value, ending
value, and number of points in the sweep. The peak value vs the sweep parameter, as well as the family of produced
spectra, will be plotted automatically when the simulation completes.
If the table gain model is activated, the gain calculation will simply extract the requested data from the gain database.
The Simulation Parameters dialog (Fig. 3.22) launches the full laser simulation. All the bias points defined in the bias
table are simulated in sequence once this simulation has begun. Prior to hitting OK, the Bias Table may be accessed via
the Bias Range button, and the desired bias points may be activated or deactivated (see section on Bias Table). Note that
all the points must be simulated the first time, or, if significant changes have been made to the structure or material
parameters, or if the grid has changed.
Physical Models
The physical process to be simulated may be selected from this dialog. Please see the Physical Models section for a
description of the models. Currently, the following models are available to be selected from the laser simulation dialog:
• Impact Ionization Breakdown model for reverse bias
• Zener Tunneling Breackdown model for reverse bias
• Self-Heating activates the lattice heat equation and thermal boundary conditions
• Shockley-Read-Hall Dark recombination
• Auger Dark recombination
• Carrier dependent index changes: index is updated and mode is recalculated at every bias
• Temperature dependence of the index for self-heating simulations, mode is recalculated at every bias.
• Carrier dependent losses: Activates the free-carrier absorption model, (selected from Free-Carrier pull-
down menu)
• Bulk Spontaneous Emission: activates spontaneous recombination in bulk regions and from continuum
states.
• Bulk Bandgap Renormalization: Activates bandgap shrinkage in bulk regions (always active in quantum
wells)
• Incomplete Ionization
• Quantum Interface Effects: Activates Haensch model describing reduction of carrier densities in the
vicinity of potential barriers.
• Interface Tunneling: Activates tunneling model for enhancement of current across potential barriers
associated with material interfaces
• Interface (SRH) recombination
• From the mobility model pull-down menus, various temperature, doping, and field dependencies may be
accounted for
Simulation Options
Several checkbox enabled option are available to allow the output of the modal gain at each bias, which incurs a small
computational penalty, the automatic recalculation of the Mode, and the automatic recalculation of the K•P data. If
unchecked, the currently saved data is used for the simulation. Additional options to control the simulation are:
• Recalculate the Pre-Process Material Gain (use if quantum well parameters have changed)
• Self Consistent Schroedinger solve: enforces self-consistency by resolving for wavefunctions and subband
energies for every Newton iteration
• 3 Options for Mode recalculation; just cold cavity, every steady-state bias, every transient point
• # Thermal Equalibrium points allows the User to simulate the TEQ (0 bias) point in several steps, each with
increasing doping level, until specified levels have been achieved. This may allow the TEQ point to
converge for highly doped structures, when all other tricks have failed (currently inactive).
If the desired plot is not listed, custom plots can be generated as well. These fall into 3 categories, bias dependent data,
spatial data, and energy data. The plot axes in each case are selected from pull-down lists. Display of each of the three
custom plot types is enabled by a corresponding checkbox. Furthermore, the data can be modified by and expression in
the Operation fields (the axis values are denoted by x or y) (see Fig. 3.24).
Most spatial plots are displayed on a uniform grid, and the resolution and domain of this grid can be set by clicking the
Set Grid button, which displays the Uniform Grid Dialog. If the Uniform Mesh checkbox is unchecked, then the
RglPLOT utility will be called and data will be displayed on the nonuniform mesh.
In addition to the standard and custom plots, several reports are available and can be displayed by the default text editor
when their checkbox is checked.
Furthermore, several conveiniences are available for control of the plots. First, there is a quick access to the Bias Editor
through the View Bias button, also an additional subtitle may be applied to all plots as a documentation mechanism, and
lastly, several plots may be overlayed via the Add to Plot option, which allows the user to specify (or browse for) an
existing plot, onto which the new data will be displayed.
All simulation data is stored in a workspace subdirectory which is prefixed by a User specified name. To refer to the
desired workspace, enter its run prefix in the Generate Plot dialog.
Finally, the Generate Profile Dialog contains a Help button which brings up this section of the OnLine manual directly.
Rin is associated with the source and is typically 50 Ohms, while Cp, Lp, and Rp are associated with the packaging, and
Rs and Cs are associated with the substrate. These parameters are adjusted from the Package & Chip Parasitics Dialog,
accessed via the Utilities / Parasitics... pulldown menu.
These effects can be enabled and disabled by simply checking or unchecking the Enable Parasitic Effects checkbox. The
results should be immediately appearent when the Frequency Response is replotted via the Plot Generation Dialog.
Finally, the Package & Chip Parasitics Dialog contains a Help button which brings up this section of the OnLine manual
directly.
Finally, the Scan Variable Dialog contains a Help button which brings up this section of the OnLine manual directly.
References
[1] T. Tamir, Guided-Wave Optoelectronics, 2nd ed., Springer Verlag, 1990, Heidleberg, Chap. 5.
[2] M.L. Majewski & D. Novak, IEEE Microwave & Guided Wave Letters, Vol. 1, No. 9, Sept. 191, pp. 246-8.
This chapter contains a tutorial describing the layout and simulation of an InGaAs FP broad area (1D) edge emitter. The
associated file, fp1d.las, resides in <rsoft_dir>\Examples\LaserMOD\fp1d. This tutorial should be used as the
first introduction of LaserMOD to a new use, and will be built upon by the other tutorials.
4.A. Layout
This section describes the procedure for creating the file, fp1d.las. Note that clicking the OK button in the following
dialog boxes has the standard action of accepting the settings in that dialog, while clicking the Cancel button reverts to
previous settings. These actions may not be stated explicitly in the following, in the interest of brevity, and since the
need for these actions will be obvious to the user.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 79
Figure 4-31. Initial start-up dialog. This dialog is also accessible at any time from the Side Toolbar.
80 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-32. Layout after regions are randomly drawn.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 81
Figure 4-33
1. Right mouse click on the bottom electrode and change the following settings, as in Fig. 4.4. Note that the Y
Reference Element # is 0, meaning this region is positioned absolutely.
• Set Element Width to Width.
• Set X Ref. to Xcenter.
• In this tutorial, Y Ref. is assumed to be 0.
82 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-34
2. Right mouse click on the first semiconductor region and change the following settings, as in Fig. 4.5.
• Set Element Width to Width.
• Set Element Height to 1.
• Set X Ref. to Xcenter.
• Set the Y reference Element # to 1.
• Click the Set Material Button and choose AlGaAs from the Material System
pulldown list. Since this is a ternary system, the Alloy X composition must be set; use 0.6. (the Alloy Y
composition will be ignored since a quarternay was not selected).
• In the Material Data Dialog, set the Acceptors to 1e18 (this sets the doping to p-Type).
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 83
Figure 4-35
3. Right mouse click on the quantum well region and change the following settings, as in Fig. 4.6. Note that the height
of the region will adjust automatically so that the well is now centered.
• Set Element Width to Width.
• Set X Ref. to Xcenter.
• Set Y Reference to Element # to 2.
• Set Well Thickness to 0.008.
• Click Qwell: Set Material and select InGaAs, with an
Alloy X composition of 0.2.
84 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-36
4. Right mouse click on the next semiconductor region and change the following settings, as in Fig. 4.7.
• Set Element Width to Width.
• Set Element Height to 1.
• Set X Ref. to Xcenter.
• Set the Y reference Element # to 3.
• Click the Set Material Button and choose AlGaAs from the Material System
pulldown list. Set the Alloy X composition to 0.6.
• In the Material Data Dialog, set the Donors to 5e17 (this sets the doping to n-Type).
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 85
Figure 4-37
5. Finally, right mouse click on the top electrode and change the following settings, as in Fig. 4.8.
• Set Element Width to Width.
• Set X Ref. to Xcenter.
• Set the Y reference Element # to 4.
86 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-38
The regions are now overlapping with each other and must be tiled, meaning that they must form a single rectangle in
which the regions are contiguous, non-overlapping, and no gaps exist. Although this can be done manually, if the
regions have been refernced to each other, the automatic tiling feature may be invoked.
• Click the Tile Regions button on the Side Toolbar.
• Select Full from the View pulldown menu.
• Click the Redraw button on the Top Toolbar. The layout should now appear as in Fig. 4.10.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 87
Figure 4-40. Tiled layout.
88 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
4.B. Verifying the layout
Once the CAD layout is established, the corresponding physical layout must be verified. Since the physical geometry is
rendered on a nonuniform mesh, the first step is to observe the mesh and make adjustments, if necessary, so that the
structure is properly resloved. The discretization of the structure can have profound affects on the simulation results.
Once the mesh is established, there are a number of material parameters, such as alloy composition, doping, and
refractive index, that can be immediately observed, to verify that the desired structure has in-fact been rendered. It
should be noted that for historical reasons, spatial results are plotted on a uniform mesh. This can cause some
confusion since the resolution of the displayed results is subject to both meshes, yet only the non-uniform mesh controls
the physical resolution of the simulation.
All raw data generated in a simulation process, which includes mode and profile generation, will be stored in
<prefix>_data, which will be created in the same directory as the .las file. <prefix> denotes the user selected output
prefix, and has the value tmp by default. Similarly, all plots are stored in a <prefix>_plot subdirectory. This
subdirectory is conveniently accessible by the View buttons on the Top Toolbar.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 89
Figure 4-41. Nonuniform mesh for a 1D structure (variation along the vertical, y, direction). The view is zoomed out slightly to
include the electrodes, which are not meshed, as they are outside the simulation domain in this example.
90 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-42. Alloy X profile in contour (left) resulting from a uniform grid setting of 50 x pts and 500 ypts. The cross-cut at any x
location (right) can be then be taken by right clicking near the x axis. Similarly for any y location.
Figure 4-43. All plots gererated this way are persistent, and accessible via the View Graphs button on the top toolbar.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 91
4.B.3. Calculating the doping profile
The impurity ion and net doping profiles can also be displayed by clicking the Generate Profile button on the Side
Toolbar. Here we have selected Net Doping, and the # of X pts is set to 1. Note that the p-Type regions are denoted by
negative densities.
Figure 4-44. Net Doping profile in contour (left) resulting from a uniform grid setting of 50 x pts and 500 ypts. The cross-cut at any x
location (right) can be then be taken by right clicking near the x axis.
92 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-45. Index profile in contour (left) resulting from a uniform grid setting of 50 x pts and 500 ypts. The cross-cut at any x
location (right) can be then be taken by right clicking near the x axis.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 93
Figure 4-46. Mode profile in contour (left) resulting from a uniform grid setting of 50 x pts and 500 ypts. The cross-cut at any x
location (right) can be then be taken by right clicking near the x axis.
94 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-47. Settings for a gain sweep vs density.
After a few minutes, the simulation will complete, and a plot of the gain spectra will appear as in Fig. 4.18. Zooming
may be required to get the exact view in the figure. Additional information has also been calculated however, which can
be displayed by going to the View menu in the Simulation Window, and selecting Show Material PL (Fig. 4.19), Show
Index Change (Fig. 4.20), and Show Peak Gain (Fig. 4.21). The transparency density can be read from the intersection
with the x-axis in the plot of Peak Gain vs Density. Similarly, these plots can be generated by sweeping over
temperature.
The rest of the laser simulation will be conducted at whatever value is in the Max. Density setting. This makes
recalculation of the material gain uneccessary once the simulation resumes, although the option to recalculate is available
from the Laser Simulation dialog. Any density value above the transparency level should be appropriate. If the gain
calculation is skipped, the default density setting will then be used, which may or may not be above the transparency
density. Although, this carrier density is updated during the simulation, the bandstructure is not. Recalculation of the
bandstructure is time consuming and tends not to produce noticeable differences in the results.
Note that if # Points is 1, then Max. Density will be set equal toMin. Density .
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 95
Figure 4-48. Material gain spectra.
96 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-49. PL spectra.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 97
Figure 4-50. Index change.
98 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-51. Peak gain vs density.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 99
• To adjust the bias settings click the Edit Bias Table button on the Side Toolbar.
For convenience, the table is automatically populated with several bias points.
• Add an additional bias point by highlighting bias 1 and clicking the
Duplicate Bias button. . Click Accept.
• Now highlight the new bias (bias 2) and click the Advanced button. A local Symbol
Table will appear with the simulation parameters for this bias. Increase the value of n_steps to 10.
• Add a final bias point and set the type to current and value to 25mA
100 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
4.F. Steady-state laser simulation
Finally, the laser structure is ready to be simulated. Simply click the Simulate Laser button on the Side Toolbar, select
the desired physical models, and click OK. We use the default set here, which includes SRH & Auger Recombination,
Carrier Dependent Losses (such as intervalenceband scattering), Bulk Spontaneous Recombination, and incomplete
ionization.
Figure 4-54
The L-I-V data is plotted in the Simulation Window as the simulation progresses. All data is also saved at each bias
point in the <prefix>_data subdirectory (<prefix>=tmp here), for later plot generation. The L-I-V plot is saved in the
<prefix>_plot subdirectory. After several minutes, the simulation will finish and a message dialog will appear.
Click OK in the message dialog and the results (after zooming) should appear as in Fig. 4.25.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 101
Figure 4-55
Note that a .run file is generated when a simulation begins. This is essentially an archive of the .las file as it existed
when the simulation began (regardless of whether Save was clicked or not).
102 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
• Set the Far Field Resolution to 1.
• Check the Far Field checkbox.
• Check the Energy Bands checkbox.
• Check the Charge Carriers checkbox.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 103
Figure 4-56. Plot utility dialog box
Figure 4-57. Far field vs angle – note that in Set Grid, the #x pts has been set to 1 and #y pts to 500.
104 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-58. Energy bands
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 105
Figure 4-59. Charge carriers
To improve the resolution we need to regenerate the carrier plots, and we also wish to view both holes and electrons on
the same plot.
• Click the Generate Plot button on the Side Toolbar again.
• Click the Set Grid button and change # of Y pts to 4000.
• After the new plots appear, click the View Editor button on the Top Toolbar of each.
• Copy the name of the data file in one plot, and paste it just below the data file in
the other (In Fig 4.30, tmp_Holes.rsf was pasted just below tmp_Electrons.rsf).
• Click the View Plot button on the Top Toolbar of each plot.
106 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-60. Holes (green) and Electrons (blue) zoomed in around the quantum well. The distributions reflect the contributions from
each of the bound states.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 107
Figure 4-61. Laser frequency vs bias current
108 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
4.J. Setting transient-response bias parameters
An important feature of LaserMOD is its ability to simulate the time-dependent behavior of a laser. This can be done
once the steady-state operating point is reached. Typically, a small time-dependent perturbation may be applied around
the operating point, and the transient response is recorded. To do this, several time-dependent bias points must be added.
• To add transient points to the bias settings click the Edit Bias Table button.
• Add an additional bias point by highlighting bias 2 and clicking the
Duplicate Bias button. Click Accept.
• Now highlight the new bias (bias 3), set the value to 25, and choose Current.
Click Accept (or click on the highlighted bias) to register these settings. Note that above threshold, it is
easier to apply a small perturbation via current rather than voltage. Also, we know from Fig. 4.25 that we
are already close to 25 mA, and we need to achieve a steady-state operation at some current level before we
can apply a perturbation. In the Advanced Table, set n_steps to 4.
• Highlight the bias 3, again and click Duplicate Bias 3 more times. Click Accept.
• Highlight bias 4, check the Time Dependent checkbox, and set the time step to 5
and the number of steps to 10 (t=5*10). This will give a stable level just before the perturbation is applied.
In the Advanced Table delete n_steps.
• Highlight bias 5, check the Time Dependent checkbox, and set the time step to 5
and the number of steps to 100 (t=5*110). Set the bias value to 25.001. This will give a 550ps
perturbation of 1uA. In the Advanced Table delete n_steps.
• Highlight bias 6, check the Time Dependent checkbox, and set the time step to 5
and the number of steps to 100 (t=5*100). Set the bias value back to 25. This will allow the simulation to
return to its pre-perturbation level. In the Advanced Table delete n_steps.
Another usefull (and time-saving) feature of the Bias Editor is that it allows each bias point to be acivated or deactivated
for a particular simulation. This is done by highlighting a bias and either double clicking on it to toggle through the
options, or directly selecting RUN (activate), " " (same state as previous), or HALT (deactivate) at the top of the
dialog.
Since for this example, the steady-state simulation has already been run (and material, mesh, and model options have not
been changed), we just need to run the transient bias points (and the preceding steady-state point at the level where the
transient is applied).
• Highlight bias 0 and set the first field to HALT.
• Highlight bias 3 and set the first field to RUN.
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 109
Figure 4-62. Bias editor
110 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Figure 4-63. Transient response
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 111
We note that the time for each of the transient bias points, that were set in section 4.J, had been chosen to avoid
numerical spikes that can occur when the transient response is Fourier Transformed. Though a laser is a non-linear
device, the small size of the perturbation ensures that the Fourier Transform will yield a reasonably accurate frequency
response.
• All that is required is to click the Generate Plot button and check the
Frequency Response checkbox (uncheck all others) and click OK.
Figure 4-64. Frequency response (where the last column, phase, has been commented out using a”!” at the beginning of the last line
in the plot script).
112 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
4.M. Accounting for parasitic effects
The frequency response of the intrinsic laser diode can be dramatically affected by parasitics associated with the chip and
package. A simple model (Chap. 3, section 3.O) has been incorporated into the frequency response feature to include
these effects.
• From the main Utility pulldown menu, select Parasitics (Fig. 4.35).
• Change Cs to 5.
• Change Rs to 2.
• Check the Enable Parasitic Effects checkbox.
• Regenerate the Frequency Response (Fig. 4.36).
LaserMOD 3.0 User Guide Chapter 4: InGaAs FP broad area (1D) edge emitter • 113
Figure 4-66. The intrinsic laser response (green), the parasitic response (red), and the total response (blue) are overlayed for
comparison. The intersect of each curve with the dashed line represents the 3dB point for each case.
114 • Chapter 4: InGaAs FP broad area (1D) edge emitter LaserMOD 3.0 User Guide
Chapter 5: InGaAs FP (1D) with
Table Gain model and Material
Calibration
This chapter contains a tutorial describing the layout and simulation of an InGaAs FP broad area (1D) edge emitter using
the Table Gain model. The associated file, fp1d_table.las, resides in
<rsoft_dir>\Examples\LaserMOD\fp1d_table. The tutorial in Chapter 4, should be reviewed before beginning
this one. This tutorial also demonstrates the procedure for calibrating the material gain in LaserMOD.
Please Note: The Gain Tables are licensed separately, so this tutorial example file will not run unless a license for it has
been purchased (or requested in the case of evaluation).
5.A. Layout
This tutorial will utilize the same structure that was created in the tutorial of Chapter 4. Copy the file that was generated
by the Chapter 4 tutorial and rename it for use in the present tutorial. Open this renamed .las file. No futher layout
tasks are necessary.
• Several Symbol Table variables are used to govern the Table Gain calculation (section 2…).
Here, we need only specify table_gain_material = InGaAs980nm in the Global Symbol Table (see
Fig. 5.1). If this step is skipped, an error will occur, when the calculation is run, indicating that "none"
cannot be found. The other parameters may be left as default.
• To sweep over density, click the Calculate Gain button on the Side Toolbar.
The Min. Density should be 1e12 and the Max. Density should be 2e12, as before.
• Check the Look-Up Table Gain Model checkbox and click OK (Fig. 5.2).
LaserMOD 3.0 User Guide Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration • 115
Figure 5-67. Gobal Symbol Table.
After a few minutes, the simulation will complete, and a plot of the gain spectra will appear as in Fig. 5.3. Zooming may
be required to get the exact view in the figure. Additional information has also been calculated however, which can be
displayed by going to the View menu in the Simulation Window, and selecting Show Material PL (Fig. 5.4), Show Index
Change (Fig. 5.5), and Show Peak Gain (Fig. 5.6). The transparency density can be read from the intersection with the
x-axis in the plot of Peak Gain vs Density. Similarly, these plots can be generated by sweeping over temperature.
116 • Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration LaserMOD 3.0 User Guide
Note that if # Points is 1, then Max. Density will be set equal toMin. Density .
Figure 5-69. Material gain spectra for several densities, including absorption regime and exiton peaks.
LaserMOD 3.0 User Guide Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration • 117
Figure 5-70. PL spectra.
118 • Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration LaserMOD 3.0 User Guide
Figure 5-71. Index change.
LaserMOD 3.0 User Guide Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration • 119
Figure 5-72. Peak gain vs density.
Finally, it should be noted that activation of the Table Gain Model does not preclude the calculation of the
bandstructure via the Free-Carrier gain model, when the laser simulation is run. Other parameters, such as the density
of states, are also required for simulation, and these are provided by running the Free-Carrier model.
120 • Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration LaserMOD 3.0 User Guide
The gain tables distributed with LaserMOD are proprietary and encrypted. Therefore, they cannot be exported directly
to separate plots, as all other data in LaserMOD. These tables can only be viewed in the Simulation Window.
1. Repeat the steps of section 5.B., but this time select only 3 density values. Zoom in on the gain region.
LaserMOD 3.0 User Guide Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration • 121
Figure 5-74. Free-Carrier gain spectra for the same 3 densities - uncalibrated.
3. Zooming in (Fig. 5.9), it can be seen that the gain peak is higher than that predicted by the Many-Body model (Fig.
5.7), and furthermore, it is at the wrong energy. The first step is to reduce the magnitude of the peak gain. This is done
by adjusting the broadening energy.
• Right click on the Quantum Well Region, and click on Qwell: Phys. Data.
• Add the new symbol, regmat_krelaxener, and set it to 0.08.
• Rerun the calculation and observe the result in Fig. 5.10.
122 • Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration LaserMOD 3.0 User Guide
Figure 5-75. Close-up of Free-Carrier gain spectra.
LaserMOD 3.0 User Guide Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration • 123
Figure 5-76. Free-Carrier gain spectra for the same 3 densities – after initial calibration.
It can be seen, by comparing Figs. 5.10 with Fig. 5.7, that adjustment of these quantum well parameters has brought the
two sets of gain spectra into closer agreement, at least where the magnitude of the peaks is concerned.
As for the frequency of the gain peak, this is controlled by the direct bandgap, kpmat_G6C_G8V. This parameter should
be adjusted in the material library, since there is an alloy dependence. Note that it is best to save the edited material file
to another name, and then refer to this new file in the quantum well region's material pulldown list, so that the original
library settings are not lost.
There are two auxilliary parameters in each library file that can assist in the calibration of the direct bandgap. These are
EgG_BOWING and EgG_LINEAR. Either of these, or some combination of them, may be chosen as the value for
kpmat_G6C_G8V. But it should be noted that exact frequency agreement between the Free-Carrier and Many-Body
models is not possible, since the Free-Carrier model does not account for the exciton binding energy.
IMPORTANT NOTE ON GAIN CALIBRATION
124 • Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration LaserMOD 3.0 User Guide
Calibration of the frequency should be done first, since adjustment of the bandgap will require recalibration of all the
parameters discussed above.
LaserMOD 3.0 User Guide Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration • 125
Figure 5-77. L-I curves with different loss models enabled.
The following parameters can affect both the threashold and the slope efficiency. These can be set in either the material
library files, or region by region in the local Physical Data Tables. They should be used to calibrate the slope. It is
recommended that global symbols be defined and used for the values of the following parameters in the local tables, so
that adjustment need only occur in one place.
• The Free-Carrier loss for electrons, fca_elcoef.
• The Free-Carrier loss for holes, fca_hlcoef.
The following parameters can be adjusted to affect the threashold. Except for the first one, these can be set in either the
material library files, or region by region in the local Physical Data Tables. Once the slope is correct, these can be used
to calibrate the threashold. It is recommended that global symbols be defined and used for the values of the following
parameters in the local tables, so that adjustment need only occur in one place.
• The Waveguide Loss in the Global Parameters dialog (global parameter only).
126 • Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration LaserMOD 3.0 User Guide
• The Auger recombination parameter for electrons, regmat_Augn300.
• The Auger recombination parameter for holes, regmat_Augp600.
• The SRH recombination parameter for electrons, regmat_SRH_taun.
• The SRH recombination parameter for holes, regmat_SRH_taup.
LaserMOD 3.0 User Guide Chapter 5: InGaAs FP (1D) with Table Gain model and Material Calibration • 127
Chapter 6: InGaAs FP (1D) with
Table Gain model and Self-
Heating
This chapter contains a tutorial describing the layout and simulation of an InGaAs FP broad area (1D) edge emitter with
Table Gain model and self-heating. The associated file, fp1d_table_therm.las, resides in
<rsoft_dir>\Examples\LaserMOD\fp1d_table_therm.
Please Note: The Gain Tables are licensed separately, so this tutorial example file will not run unless a license for it has
been purchased (or requested in the case of evaluation).
6.A Layout
This tutorial will utilize the same structure that was created in the tutorial of Chapter 5. Copy the file that was generated
by the Chapter 5 tutorial to a new directory and rename it for use in the present tutorial. Open this renamed .las file.
No futher layout tasks are necessary.
LaserMOD 3.0 User Guide Chapter 6: InGaAs FP (1D) with Table Gain model and Self-Heating • 129
Figure 6-78. Eelectrode boundary conditions for heat sink.
130 • Chapter 6: InGaAs FP (1D) with Table Gain model and Self-Heating LaserMOD 3.0 User Guide
Note that the electrically grounded contact may not necessarily be the one that has heat sinking. This depends on the
actual packaging configuration of the device.
LaserMOD 3.0 User Guide Chapter 6: InGaAs FP (1D) with Table Gain model and Self-Heating • 131
Figure 6-81. Simulation options for self-heating.
When the simulations have finished, plot the temperature profile in the device.
• Go to the Plot Generator and click Set Custom.
• Select LatticeTemperature from the Spatial Data pulldown list.
• Check the Spatial Data checkbox.
• Set Plot Data for Bias # to 3.
• Click Set Grid and apply the settings in Fig. 6.5.
• Check the Light vs Current (L-I) checkbox in the Standard Plots
132 • Chapter 6: InGaAs FP (1D) with Table Gain model and Self-Heating LaserMOD 3.0 User Guide
Figure 6-82. Uniform grid settings.
LaserMOD 3.0 User Guide Chapter 6: InGaAs FP (1D) with Table Gain model and Self-Heating • 133
Figure 6-84. Effects of self-heating (green) as compared to no self-heating (blue).
It can be seen from Fig. 6.6 that the L-I curve begins to roll off when the self-heating is accounted for.
134 • Chapter 6: InGaAs FP (1D) with Table Gain model and Self-Heating LaserMOD 3.0 User Guide
Chapter 7: InGaAs FP Ridge (2D)
Edge Emitter
This chapter contains a tutorial describing the layout and simulation of a InGaAs FP ridge (2D) edge emitter. The
associated file, fp2d.las, resides in <rsoft_dir>\Examples\LaserMOD\fp2d.
7.A. Layout
This section describes the procedure for creating the file, fp1d.las. Note that clicking the OK button in the following
dialog boxes has the standard action of accepting the settings in that dialog, while clicking the Cancel button reverts to
previous settings. These actions may not be stated explicitly in the following, in the interest of brevity, and since the
need for these actions will be obvious to the user.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 135
Figure 7-85. Initial start-up dialog. This dialog is also accessible at any time from the Side Toolbar.
136 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
• Select Oxide Region and draw 2 bulk oxide regions, one on either side of the topmost
bulk semiconductor region (no auto-tiling will occur). The result should be similar to Fig. 7.3.
• Click the Select Mode button on the Side Toolbar, since we are done drawing.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 137
Figure 7-87. Layout after regions are initially drawn.
138 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-88
1. Right mouse click on the bottom electrode and change the following settings, as in Fig. 7.5. Note that the Y
Reference Element # is 0, meaning this region is positioned absolutely.
• Set Element Width to Wsub.
• Set X Ref. to Xcenter.
• Set Electrode Number to 1 (this will be the ground bias).
• In this tutorial, Y Ref. is assumed to be 0.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 139
Figure 7-89
2. Right mouse click on the first semiconductor region and change the following settings, as in Fig. 7.6.
• Set Element Width to Wsub.
• Set Element Height to 1.
• Set X Ref. to Xcenter.
• Set the Y reference Element # to 1 (may already be set due to "Snap & Glue").
• Click the Set Material Button and choose AlGaAs from the Material System
pulldown list. Since this is a ternary system, the Alloy X composition must be set; use 0.6. (the Alloy Y
composition will be ignored since a quarternay was not selected).
• In the Material Data Dialog, set the Donors to 5e17 (this sets the doping to n-Type).
140 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-90
3. Right mouse click on the quantum well region and change the following settings, as in Fig. 7.7. Note that the height
of the region will adjust automatically so that the well is now centered.
• Set Element Width to Wsub.
• Set X Ref. to Xcenter.
• Check that the Y Reference to Element # is 2.
• Set Well Thickness to 0.008.
• Click Qwell: Set Material and select InGaAs, with an
Alloy X composition of 0.2.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 141
Figure 7-91
4. Right mouse click on the next semiconductor region and change the following settings, as in Fig. 7.8.
• Set Element Width to Wsub.
• Set Element Height to 0.05.
• Set X Ref. to Xcenter.
• Check that the Y reference Element # is 3.
• Click the Set Material Button and choose AlGaAs from the Material System
pulldown list. Set the Alloy X composition to 0.6.
• In the Material Data Dialog, set the Acceptors to 1e18 (this sets the doping to p-Type).
142 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-92
5. Right mouse click on the next semiconductor region and change the following settings, as in Fig. 7.9.
• Set Element Width to Wridge.
• Set Element Height to 1.
• Set X Ref. to Xcenter.
• Check that the Y reference Element # is 4.
• Click the Set Material Button and choose AlGaAs from the Material System
pulldown list. Set the Alloy X composition to 0.6.
• In the Material Data Dialog, set the Acceptors to 1e18 (this sets the doping to p-Type).
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 143
Figure 7-93
6. Right mouse click on the top electrode and change the following settings, as in Fig. 7.10.
• Set Element Width to Wridge.
• Set X Ref. to Xcenter.
• Check that the Y reference Element # is 5.
• Set the Electrode Number to 0 (this will be the applied bias).
144 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-94
7. Right mouse click on the rightmost oxide region and change the following settings, as in Fig. 7.11.
• Set Element Width to Wox.
• Set Element Height to 1.
• Set the X reference Element # to 5.
• Set the Y reference Element # to 4.
• Click the Set Material Button and note that Oxide is already selected in the
Material System pulldown list.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 145
Figure 7-95
8. Right mouse click on the remaining oxide region and apply the same settings as in Fig. 7.11.
146 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-96. Untiled layout.
The regions are now overlapping with each other and must be tiled, meaning that they must form a single rectangle in
which the regions are contiguous, non-overlapping, and no gaps exist. Although this can be done manually, if the
regions have been refernced to each other, the automatic tiling feature may be invoked.
• Click the Tile Regions button on the Side Toolbar. An "Overlapping Regions" error
will occur, ignore it for now.
• Select Full from the View pulldown menu (see Fig.7.13).
• With the mouse, drag & drop the top Oxide region (grey – highlighted) anywhere on the left
side of the client drawing window (white grided area). Click the Tile Regions button again. The layout
should now appear as in Fig. 7.14. When there is a degeneracy as to where to place a relatively referenced
region (right side or left side), then the current position of the region is used. That is why dragging the
region to the left side of the layout is all that is necessary.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 147
Figure 7-97. Tiled layout – with overlapped oxide regions.
148 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-98. Tiled layout.
Note that the structure is not to scale. It can be viewed to scale by selecting Aspect Ratio = 1:1 from the View pulldown
menu.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 149
7.B. Verifying the Layout
Once the CAD layout is established, the corresponding physical layout must be verified. Since the physical geometry is
rendered on a nonuniform mesh, the first step is to observe the mesh and make adjustments, if necessary, so that the
structure is properly resloved. The discretization of the structure can have profound affects on the simulation results.
Once the mesh is established, there are a number of material parameters, such as alloy composition, doping, and
refractive index, that can be immediately observed, to verify that the desired structure has in-fact been rendered. It
should be noted that for historical reasons, spatial results are plotted on a uniform mesh. This can cause some
confusion since the resolution of the displayed results is subject to both meshes, yet only the non-uniform mesh controls
the physical resolution of the simulation.
All raw data generated in a simulation process, which includes mode and profile generation, will be stored in
<prefix>_data, which will be created in the same directory as the .las file. <prefix> denotes the user selected output
prefix, and has the value tmp by default. Similarly, all plots are stored in a <prefix>_plot subdirectory. This
subdirectory is conveniently accessible by the View buttons on the Top Toolbar.
150 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-99. Default nonuniform mesh for a 2D structure – note that the structure is visible in the background. Only the right half is
shown since it is assumed to be symmetric about x=0 (this is set in the Global Parameters dialog).
For efficiency, the mesh can be made coarser in certain places, such as the right side of the domain where there will be
small field and carrier density gradients, and near the heterojunction just below the Oxide. Note that eliminating vertical
gridlines will significantly improve the speed of the simulation since the quantum wells are solved along each vertical
line, and this is computationally intesive.
• Go back to CAD layout and open the Global Parameters dialog. Change
Spacing-Right and Spacing-Left to 2. These settings apply to all the regions. Regenerate the mesh to
observe the change. Mesh warnings can be ignored.
• Right click on the ridge (region 5) and uncheck the Use Defaults checkbox for X.
• Change Min. Spacing - Right and Min. Spacing - left to 0.5.
• Uncheck the Use Defaults checkbox for the Y direction.
• Change Min. Spacing - Bottom to 0.02. Note that the mesh will not change near
this interface. That is because the SMALLEST spacing near a heterojunction is used. Currently, the
spacing in the Oxide regions is smaller than 0.02.
• Right click on Oxide region 7, uncheck the Use Defaults checkboxes for X & Y,
change Min. Spacing - Bottom to 0.02, and Min. Spacing - left to 0.5.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 151
• Right click on Oxide region 8, uncheck the Use Defaults checkboxes for Y, and
change Min. Spacing - Bottom to 0.02. The X parameters will be greyed out because this region is
currently inactive, as it resides in the left half (unsimulated) part of the domain.
• Right click on the thin bulk region just below the Oxide (regions 4), uncheck the
Use Defaults checkbox for Y, and change the Min. Spacing - top to 0.02.
• Regenerate the grid one last time. It should appear as in Fig. 7.16.
Figure 7-100. Adjusted nonuniform mesh for half domain of a 2D ridge laser.
152 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
mesh. In each case, the last profile generated will be saved automatically in the <prefix>_plot subdirectory, and can
be viewed at any time by clicking the View Graphsbutton on the Top Toolbar and opening <prefix>_Profile.pcs.
It is strongly recommended that the reader reviews the Appendix on Plotting, at this time, since a variety of plotting
features are available.
Figure 7-101. Alloy X profile as a contour plot (left). The cross-cut (right) from right clicking on the x axis at x=4.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 153
Figure 7-102. Net Doping profile as a contour plot (left). The cross-cut (right) from right clicking on the x axis at x=1. Note that the
p-Type regions are denoted by negative densities.
Figure 7-103. Index profile as a contour plot (left). The cross-cut (right) from right clicking on the x axis at x=4.
154 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
7.C. Calculating the Mode
Before lasing can occur, the structure must exhibit an optical mode. In the case of index guiding lasers, if no cold cavity
mode results from this step, it may be necessary to change the laser stucture to improve waveguiding.
• Click the Calculate Mode button on the Side Toolbar, and set the # of X pts to 50
and also set # of Y pts to 500. The mode in Fig. 7.20 should appear.
Typically, this cold cavity mode is used throughout the remainder of the simulation, although option to recalculate it is
available from the Laser Simulation dialog. If it is desireable to include the effects of index changes due to self-heating
or carrier density, then the mode will automatically be recalculated at each bias. These options are likewise set in the
Laser Simulation dialog.
Figure 7-104. Mode profile as a contour plot (left). The cross-cut (right) from right clicking on the x axis at x=0.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 155
7.D. Calling the BeamPROP Mode Solver
LaserMOD has been integrated with other tools from RSoft Design Group. Here, the use of BeamPROP is for the
calculation of the mode, is demonstrated.
• Click the Calculate Mode button on the Side Toolbar once again, but this time select
the Beam Propagation Method. Notice that several other controls will be enabled.
• Launch the mode calculation and view its progress by clicking on the BeamPROP process
icon on the Taskbar at the bottom of your computer screen.
• Notice that there are some unphysical features evolving along the center y position. This
indicates that the BPM step is too large.
• Terminate both the BeamPROP and LaserMOD Simulation Windows.
• Reduce the Z Step size by a factor of 2 and rerun the mode calculation.
• When it finishes, the results should be nearly (barring discretization error) indistinguishable
from those calculated previously. Note that the laterial cross-cut is shown in Fig. 7.21, as where the
vertical cross-cut was shown in Fig. 7.20.
Figure 7-105. Mode profile as a contour plot (left). The cross-cut (right) from right clicking on the y axis at y=1.2.
156 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
7.E. Calculating the Material Gain
The next step is to determine the gain behavior of the quantum well as a function of temperature (the density sweep was
performed in section 4.D, and will not be repeated here). For Fabrey-Perot lasers, the lasing frequency will be
determined by the location of the peak gain. So this procedure can give an indication of the how the laser frequency will
drift with temperature.
• To sweep over temperature, click the Calculate Gain button on the Side Toolbar
and select Sweep over Temperature .
• Set the Min. Density to 2e12.
• Set the Max. Temperature to 400 and click OK.
After a few minutes, the simulation will complete, and a plot of the gain spectra will appear as in Fig. 7.23. Zooming
may be required to get the exact view in the figure. Additional information has also been calculated however, which can
be displayed by going to the View menu in the Simulation Window, and selecting Show Material PL (Fig. 7.24), Show
Index Change (Fig. 7.25), and Show Peak Gain (Fig. 7.26). Note that the peak gain shift dramatically in frequency as
well as in amplitude
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 157
Figure 7-107. Material gain spectra.
158 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-108. PL spectra.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 159
Figure 7-109. Index change.
160 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-110. Peak gain vs temperature.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 161
• To adjust the bias settings click the Edit Bias Table button on the Side Toolbar.
For convenience, the table is automatically populated with several bias points.
• Add an additional bias point by highlighting bias 1 and clicking the
Duplicate Bias button. Increase the value of ramp steps to 10. Click Accept.
• Now highlight the new bias (bias 2) and click the Advanced button. A local Symbol
Table will appear with the simulation parameters for this bias. .
162 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
7.G. Steady-state laser simulation
Finally, the laser structure is ready to be simulated. Since a sweep over gain spectra was just performed, it is wise to
recalculate the gain and the mode before simulating the laser.
• Click the Edit Symbols button on the Side Toolbar (the following changes could also be
made from Gain and Mode calculation dialogs).
• Delete the run_mode_method symbol (sets the default mode method).
• Set the run_gain_maxtemp symbol to 300. Click OK.
• Click the Simulate Laser button on the Side Toolbar, select the desired physical models.
We use the default set here, which includes SRH & Auger Recombination, Carrier Dependent Losses (such
as intervalenceband scattering), Bulk Spontaneous Recombination, and incomplete ionization.
• Check the Recalculate KP and Recalculate Mode checkboxes to insure that the
desired settings are in effect during the simulation.
Figure 7-113. Global Symbol table – quick access to parameters and settings.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 163
Figure 7-114
The L-I-V data is plotted in the Simulation Window as the simulation progresses. All data is also saved at each bias
point in the <prefix>_data subdirectory (<prefix>=tmp here), for later plot generation. The L-I-V plot is saved in the
<prefix>_plot subdirectory. After several minutes, the simulation will finish and a message dialog will appear.
Click OK in the message dialog and the results (after zooming) should appear as in Fig. 7.30.
164 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-115
Note that a .run file is generated when a simulation begins. This is essentially an archive of the .las file as it existed
when the simulation began (regardless of whether Save was clicked or not).
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 165
• Set the Plot Data for Bias # to 2.
• Set the Far Field Resolution to 5. Start with a large value here since too fine a
resolution may require virtual memory.
• Check the Far Field checkbox.
• Check the Energy Bands checkbox.
• Check the Charge Carriers checkbox.
166 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-116. Plot utility dialog box
The plots in Figs. 7.33-7.39 will result. The default plot utility for 2D spatial data is CPLOT. This utility allows the user
to view all 1D cross-cuts of the data by right clicking on an axis at the point of interest. These plots are in the
<prefix>_plot subdirectory, and are accessible any time via the View Contours button on the Top Toolbar.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 167
Figure 7-117. Far field vs angle: contour (left) cross-cut (right).
168 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-119. Valence band: contour (left) cross-cut (right)
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 169
Figure 7-121. Hole Fermi level: contour (left) cross-cut (right)
170 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Figure 7-123. Hole density: contour (left) cross-cut (right)
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 171
Figure 7-124. Fundamental mode: contour (left) cross-cut (right)
Though subtle in Fig. 7.40, it is dramatically clear in Fig. 7.41 that the mesh is not properly resolving the mode profiles.
Reruning the mode calculation with more uniform grid points will not help. This is the price of a coarse nonuniform
mesh.
• Refine the mesh in the ridge by right clicking on region 5.
• Check the Uniformcheckbox for X
• Set Max. X Spacing to 0.25.
• Regenerate the mesh (Fig. 7.42). Note that the mesh warning can be ignored, or alleviated
172 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
by setting the Min. Spacing - Left to 0.25 in the Oxide region (region 7).
• Recalculate the modes. Note that the new confinement factors are about the same as the old.
• Reopen the results from View Contours. (Fig. 7.43).
Figure 7-127. Fundamental mode on refined mesh: contour (left) cross-cut (right)
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 173
Figure 7-128. First order mode on refined mesh: contour (left) cross-cut (right)
From the results calculated on the coarse grid, it can be seen from the cross-section of the first excited mode that the
intensity is not represented very well and that still higher modes may not be accurately represented at all. If the
confinement factors are different for the finer mesh results, then the finer mesh should be used for the simulation.
Fortunately, in this example, the confinement factors are about the same, so the coarse mesh will be sufficient for
simulating mode competition.
174 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
• Click the Set Custombutton.
• Select Current[0] for the X Axis Parameter and ModePower[0,0] for the
Y Axis Parameter.
The L-I curve for the fundamental mode will be plotted. Repeat this for the first order mode.
• Click the Generate Plot button on the Side Toolbar
• Check the Data vs Bias checkbox.
• Click the Set Custombutton.
• Select Current[0] for the X Axis Parameter and ModePower[1,0] for the
Y Axis Parameter.
• This time, also check the standard plot checkbox for Light vs Current.
Three plots have now been generated under the WinPLOT utility. It is more informative to compare all three data sets
on a single plot.
• Choose the standard L-I plot and click the View Editor button on the Top
Toolbar (this option is also available from the Window pulldown menu.
• Repeat this for the other two plots.
• Copy the data file names from any two of the plots into the third, for example:
<prefix>_LI.rsf
<prefix>_ModePower[0,0]_vs_Current[0].rsf
<prefix>_ModePower[1,0]_vs_Current[0].rsf
• Click the View Plot button.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 175
Figure 7-129. Total (blue), fundamental mode (green), and first order mode (red) L-I curves.
It appears from Fig. 7.45, that the contribution to the device output, from the first order mode, is significant.
Furthermore, since the threshold are approximately the same, no kink in the net L-I curve should be visible.
176 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
When the farfield is calculated, it is necessary to extend the half-domain results to full domain, that is if the half domain
feature is being used. Since the nearfield is calculated automatically when a farfield is generated, the extension to full
domain is also automatic. However, to see it (when half domain is simulated) the nearfield must be opened from the
saved data. If it is generated as a standard plot, only the half domain nearfield will be shown.
LaserMOD 3.0 User Guide Chapter 7: InGaAs FP Ridge (2D) Edge Emitter • 177
Figure 7-132. Electron distribution: contour (left) cross-cut along the quantum well (right)
Figure 7-133. Hole distribution: contour (left) cross-cut along the quantum well (right)
178 • Chapter 7: InGaAs FP Ridge (2D) Edge Emitter LaserMOD 3.0 User Guide
Chapter 8: GaInAsP MQW FP
ridge (2D) edge emitter
This chapter contains a tutorial describing a simulation validation for a GaInAsP MQW FP ridge (2D) edge emitter. The
associated file, fp2d_mqw.las, resides in <rsoft_dir>\Examples\LaserMOD\ fp2d_mqw.
LaserMOD 3.0 User Guide Chapter 8: GaInAsP MQW FP ridge (2D) edge emitter • 179
Figure 8-134. Symbol Table for example fp1d_mqw.
In addition to the above processes which affect both the slope efficiency and the trheshold current, several other
parameters (see Appendix on Material Parameters) may be important to consider when doing calibrations. These include
energy gap and its temperature dependence (the "A" coefficient is most important) which affect the spectral location of
the gain peak, spontaneous recombination which affects both threashold and slope efficiency, and the waveguide loss
which (see global parameters dialog box) effects the threshold.
The temperature dependence of the Auger coefficient has been described in the literature [1] as
S
TUV Q
E E
C p (T ) = C 0 exp a − a
T Q
R (1)
kT0 kT
and has been considered there as the dominant mechanism for controling the threashold current. An alternative
viewpoint [2] is that a the collision broadening, which has a complicated temperature and density dependence, is a better
fitting parameter. A model for this dependence available through the table gain model, but a built in model is not
available in the current version. The Ebroad parameter will be varied to approximate this dependence.
180 • Chapter 8: GaInAsP MQW FP ridge (2D) edge emitter LaserMOD 3.0 User Guide
Figure 8-135. LI curves for different stages in calibration process for T=313K.
In Fig. 8.2, the solid curve represents all the default values in the material library. The long dashes represent all default
values except that the Ebroad has been increased to 60 meV. The effects of these two different broadenings can be seen
in the gain spectra of Fig. 8.3. The short dashed curve, results from increasing the Auger coefficent for holes (C0
specifically) and good agreement with the literature is achieved. All other parameters remain at their default levels.
LaserMOD 3.0 User Guide Chapter 8: GaInAsP MQW FP ridge (2D) edge emitter • 181
Figure 8-136. Gain spectra with different broadening halfwidths.
A second calibration point (see Fig. 8.3) is taken at a temperature of 333K. The solid line results from simply reruning
the KP and Laser Simulations at the new temperature. The Auger coefficient adjusts according to (1) automatically due
to the parametric nature of the software, but this is insufficient to match to measured data. Several approaches are
possible, a stronger temperature dependence for the Auger recombination can be chosen or some of the other parameters
listed above may be adjusted, but these would need to be adjusted at each new temperature as well. Instead, only Ebroad
is increased (to 80meV) which represents the higher collision broadening with higher temperature. Once again, good
agreement with the measured data is obtained. At this point is can be seen that with the appropriate broadening model
(which can be programed parametrically in the symbol table or achieved through the Table Gain) no further calibration is
necessary and device performance at new temperatures should now be predictable via simulation.
182 • Chapter 8: GaInAsP MQW FP ridge (2D) edge emitter LaserMOD 3.0 User Guide
Figure 8-137. LI curves for different stages in the calibration for T=333K.
LaserMOD 3.0 User Guide Chapter 8: GaInAsP MQW FP ridge (2D) edge emitter • 183
Figure 8-138. CAD layout of the laser cross-section, showing 6 wells and Oxide confinement regions (not to scale).
184 • Chapter 8: GaInAsP MQW FP ridge (2D) edge emitter LaserMOD 3.0 User Guide
Figure 8-139. Peak material gain as a function of carrier density at 6 selected temperatures (after material calibration).
Experimental data is shown with solid lines, while the circles show the points calculated by LaserMOD.
LaserMOD 3.0 User Guide Chapter 8: GaInAsP MQW FP ridge (2D) edge emitter • 185
Figure 8-140. Light - Current curves for the laser at 6 selected temperatures (after material calibration). Experimental data is shown
with solid lines, while the circles show the points calculated by LaserMOD.
References
[1] J.Piprek, P.Abraham, and J.E. Bowers, "Self-Consistent Analysis of High Temperature Effects on Strained-Layer
Multiquantum-Well InGaAsP-InP Lasers", IEEE Journal of Quantum Electronics, 36, pp. 366-374, 2000.
[2] B. Grote, et. al. "Integration of microscopic gain modeling into a commercial laser simulation environment",
submitted to Photonics West 2003 conference proceedings.
186 • Chapter 8: GaInAsP MQW FP ridge (2D) edge emitter LaserMOD 3.0 User Guide
Chapter 9: 1D VSCEL with Self-
Heating
LaserMOD can simulate VCSELs. Furthermore, a number of other features important to VCSEL simulation, such as
self-heating and tunneling at semiconductor heterojunctions, are among the simulation capabilities.
This chapter contains a tutorial describing the use of DBR elements in the device layout and the simulation of an
example 1D AlGaAs MQW VCSEL with GaAs/AlGaAs DBRs. The associated file, vcsel1d.las, resides in
<rsoft_dir>\Examples\LaserMOD\vcsel1d.
This example will have self-heating activated and the roll-off of the L-I curve will be shown.
• The number of periods and the thickness of each layer are specified. The color can be chosen
independently as well. “Nperiod” is a user variable that has been defined in the global symbol table. If a
non-integer value for # of periods is given, then an additional half period is added to the stack. Since each
DBR is composed of 2 layers; Bottom Layer governs the bottom portion of each period and Top Layer
governs the top portion. As a result, it can be seen that the layer specifications (thickness and material)
must be inverted between the top and bottom DBRs in order to create a symmetric cavity. It is convenient
to invert the colors as well, so that the same color represents the same material in each DBR. The
thicknesses have been parameterized based on the index values from the material database and the design
wavelength of the cavity.
• Right click on one of the layer buttons and notice that the standard dialog for setting material parameters
appears.
• Notice that an alloy profile has been specified for X. This is used to create a linear grade between the
layers. Click the profile button and notice that a Trapezoid profile has been used. Each of the 2 layers has
its own trapezoid profile, which extends from some average alloy value (.55) to either the maximum (.9) or
minimum (.2) alloy value. The normalized size of the flat part of a trapezoid is specified by Center yo (or
xo).
• Close the dialogs and generate an index profile. Notice the effect of the trapezoid.
• Go to the “View Graphs” button on the top toolbar and open the Transmission spectrum plot that was just
generated (in _plot directory).
• Perform a gain calculation using the “Calculate Gain” button on the side toolbar.
• Go to the “View Graphs” button on the top toolbar and open the Gain spectrum (in _plot directory).
• The result may be superimposed with the transmission spectrum above to facilitate cavity design. This
overlay is done by opening both plots side by side and going to the View Edit Mode of Windplot. Copy the
data file of one plot to the edit window of the other. You will need to use the /sy option after the gain file
name so that both data sets will be visible on the same scale.
Figure 148. How to overlay plots using the Winplot script editor (see RPLOT.pdf or WinPLOT Help). The last line was cut and
paste from the script editor window of the Material Gain plot.
• First, run the full laser simulation by clicking the “Simulate Laser” button on the side toolbar. Do not use
self-heating, since these results will be used for later comparison.
• Now, rerun the full laser simulation with self-heating. Make sure Auger and carrier dependent losses are
also enabled (see below).
• Go to the Plot Generation Dialog and generate a standard L-I curve. Both runs will be shown, with self-
heating (blue) and without (green). Notice the roll-off of the L-I curve due to temperature detuning
between the cavity resonance and the gain peak.
• Generate “MaxTemp” vs Current (Custom Bias Data plot). Recall that Custom plots are enabled via
checkboxes and the “Plot For Bias#” must be set for Custom Spatial and Energy plots
• Use the Gain generation Dialog to sweep the gain over this temperature range. Overlay these with the
Optical Spectrum (standard plot), as before, to observe the detuning.
This chapter extends the concepts of the previous chapters with a tutorial describing the simulation of an example 2D
Oxide-Aperture MQW VCSEL with GaAs/AlGaAs DBRs. The associated file, vcsel2d_fem.las, resides in
<rsoft_dir>\Examples\LaserMOD\vcsel2d_fem.
This example will demonstrate the use of the FEM (finite element method) mode solver to determine VCSEL cavity
modes. One effect of this multi-mode simulation will be to demonstrate kink in the L-I curve, which indicates a switch
in the dominant lasing mode.
LaserMOD 3.0 User Guide Chapter 10: 2D VSCEL using FEM • 201
Figure 154. Mode calculation for 1D TMM version of the problem
• Go to the “Output – Show Spectrum” menu option of the simulation window to see the Transmission
spectrum plot that was just generated.
202 • Chapter 10: 2D VSCEL using FEM LaserMOD 3.0 User Guide
Figure 155. Spectrum Plot and resonant mode at 871nm.
• From the transmission peak in the stop band (see Fig. 2) we get the initial guess for the “Mode
Wavelength” needed by the FEM solver (0.871).
• Close and reopen the file to reset it to the original parameters. Note that 0.86 is entered in the
“Wavelength” rather than 0.871. This is because, to save some time, we are going to use 1st order elements,
which will give the correct mode profiles but not the correct resonances (a much finer mesh would have to
be used for 1st order elements to give converged resonances). The more rigourous alternative, albeit still
slower, would be to use 2nd order elements (with 30 x points and an initial guess of 0.871). This will give
both the correct profiles and resonances.
LaserMOD 3.0 User Guide Chapter 10: 2D VSCEL using FEM • 203
Figure 156. Mode calculation parameters for 1st order FEM simulation
• Select #azimuthal mode =2 for the mode calculation since the fundamental VCSEL mode is typically
HE11, which occurs at L=1 (not L=0). With these settings, 1 radial modes for each L number will be
calculated. (One FEM calculation produeces all requested radial modes for a single azimuthal #, so here,
two FEM calculations will automatically be performed)
• Observe the PML (perfectly matched layer) settings. Typically the domain must be extended by the
thickness of the PML since the PML should only exist outside the device. For index guided structures, the
side PML is not needed.
• Finally, note that the “Min Div/Layer” setting insures a min # of points per layer. Since the mesh is
nonuniform, the spacings can vary dramatically, and while interfaces are included automatically, this
setting insures that there are enough points within each region to resolve the variation in the field there.
Click Show FEM Mesh to the mesh.
204 • Chapter 10: 2D VSCEL using FEM LaserMOD 3.0 User Guide
• Click OK. The simulation will take some time…FemSIM will be running in the background. The unsorted
modes will be saved to the _data directory, one file for each field component of each mode. These can be
conveniently viewed with the RsdataBrowser.
LaserMOD 3.0 User Guide Chapter 10: 2D VSCEL using FEM • 205
Figure 157. Cylindrical cross-section of the fundamental radial mode for L=0.
206 • Chapter 10: 2D VSCEL using FEM LaserMOD 3.0 User Guide
Figure 158. Cylindrical cross-section of the fundamental radial mode for L=1.
• The number of modes saved is given by the # of eigenvalues specified. The program then sorts these
modes, first by lowest cavity loss, and then by resonant wavelength. The requested number of azimuthal
and radial modes are then taken from this sorted set, and saved in the _plot directory (as is the case for all
other mode solvers). This is the final group of modes used in the full laser simulation.
LaserMOD 3.0 User Guide Chapter 10: 2D VSCEL using FEM • 207
Figure 159. Mode 0 used in simulation
208 • Chapter 10: 2D VSCEL using FEM LaserMOD 3.0 User Guide
Figure 160. Mode 1 used in simulation
• Run the full laser simulation by clicking the “Simulate Laser” button on the side toolbar. For the purposes
of this tutorial, an extra bias point, Bias 8, has been added to drive the simulation to 20 mA.
LaserMOD 3.0 User Guide Chapter 10: 2D VSCEL using FEM • 209
Figure 161. Simulation parameters.
• Notice the roll-off in the slope of the L-I curve. There are several possible causes; thermal roll-off (but
self-heating is not active here), Kink due to multimode competition, or in this case, saturation due to spatial
hole burning.
210 • Chapter 10: 2D VSCEL using FEM LaserMOD 3.0 User Guide
Figure 162. L-I-V curve for VCSEL – added bias point (#8) for 20mA operation
• Generate optical spectra at bias 7 & 8 using the Standard Plot in the Plot Generation Dialog. They both
show the same dominant mode, so this roll-off is not due to kink.
LaserMOD 3.0 User Guide Chapter 10: 2D VSCEL using FEM • 211
Figure 163. Optical Spectrum at 20mA. Only 1 mode is lasing.
• To see which mode is lasing generate the individual L-I curves for each mode using the custom bias data
plot for mode power.
212 • Chapter 10: 2D VSCEL using FEM LaserMOD 3.0 User Guide
Figure 164. L-I curve for Mode 0 (left) and Mode 1 (right) which is below threshold.
• To explain the source of the roll-off, generate the charge densities for Bias 8. A large spatial hole can be
observed for both electrons and holes
Figure 165. Cylindrical cross-section of electron distribution (left) and cross-cut along the radius at the quantum well (right)
showing strong spatial hole burning. A similar situation exists for holes.
• Finally, it is desirable to see the nearfield and farfield of the device. Go to the Plot Generator dialog again
and check Nearfield and Farfield. Note the settings in the dependency area; x-z plane has been checked
and a position given just above the top facet. Click OK.
LaserMOD 3.0 User Guide Chapter 10: 2D VSCEL using FEM • 213
Figure 166. Nearfield (left) and farfield (right) showing the lasing mode(s), which in this case, is Mode 0.
214 • Chapter 10: 2D VSCEL using FEM LaserMOD 3.0 User Guide
Chapter 11: DFB Introduction
and Uniform Grating Example
This tutorial will first give the background for the DFB cavity simulation and then proceed to give the basic layout and
simulation of a uniform grating Distributed Feedback Laser (DFB). It is a hypothetical example, for demonstration
purposes.
• See file DFB_uniform.las .
• A new “grating” region will be introduced.
• The simulation plane will now be comprised of the growth (y) and lasing (x) directions. Note that x was
previously used to define a waveguide’s lateral dimension for FP lasers, and the radial dimension for
VCSEL’s.
• Resulting laser performance, including optical spectra above and below threshold, will be plotted and
examined.
11.A. Introduction
• Distributed feedback (DFB) lasers employ longitudinal gratings to achieve a superior mode selectivity,
frequency stability, and sidemode suppression ratio (SMSR).
• Of interest in a DFB laser simulation are the effects of various grating profiles, facet reflectivity and phase,
and longitudinal carrier distribution. These, along with the standard electro-thermal transport effects, help
to determine the laser’s performance with temperature, injection current, and modulation frequency
• LaserMOD’s DFB module therefore allows the user to describe the geometry of single or multi-section
lasers with nearly arbitrary grating profiles, facet reflectivity and phase, and to calculate the gain and mode
spectra of the cavity prior to running a full laser simulation
LaserMOD 3.0 User Guide Chapter 11: DFB Introduction and Uniform Grating Example • 215
“Confinement Scaling Factor” to <1 in the Simulation Parameters dialog. This will cause the lasing
threshold to be higher. This factor can be determined by performing a mode calculation on waveguide
cross-section (FP layout).
Figure 167. Typical geometries for FP, VCSEL, and DFB cavities.
• A variety of built-in grating profiles are available, including sin, square, triangle, sawtooth, trapezoid,
custom, and V-groove (not shown below).
216 • Chapter 11: DFB Introduction and Uniform Grating Example LaserMOD 3.0 User Guide
Figure 169. Several of the grating profiles that can be specified in the software
• The custom grating option (a parapolic profile is shown last in Fig. 3, as an example, in the above fig.)
allows the user to create a nearly arbitrary profile.
• The gratings are formed at the interface between two different materials, each selected independently by
the user (bottom layer and top layer).
• Finally, the phase at the left facet is specified explicitly, while the phase at the right facet is then
determined by; the left facet phase, the length, and the period. Typically, it is desirable to specify the facet
phases, the number of periods, and the period size. The grating length (entered in the Element Width field)
can then be determined from [Right Phase – Left Phase + Number Periods*Period Size].
LaserMOD 3.0 User Guide Chapter 11: DFB Introduction and Uniform Grating Example • 217
Figure 170. Control of facet phase.
218 • Chapter 11: DFB Introduction and Uniform Grating Example LaserMOD 3.0 User Guide
Figure 171. Layout of Uniform grating example.
LaserMOD 3.0 User Guide Chapter 11: DFB Introduction and Uniform Grating Example • 219
Figure 172. Global Parameters Dialog
• Define the following symbols in the Global Symbol Table for convenience
• Draw the bottom Eelectrode (# 1). This is done by clicking the RECT button on the side toolbar, and
selecting the region type (BIAS button) from the grouping formed by the next 6 buttons.
• Draw a Bulk Region (# 2) to represent the bottom substrate (BULK button).
• Draw a Grating Region (# 3) (GRAT button).
• Draw a Bulk Region (# 4) to represent the (ungrated) portion of the bottom cladding.
• Draw a Quantum Well Region (# 5) to represent the active layer. (MQW button).
220 • Chapter 11: DFB Introduction and Uniform Grating Example LaserMOD 3.0 User Guide
• Draw a Bulk Region (# 6) to represent the top cladding.
• Draw a final Bulk Region (# 7).
• Draw the top Electrode (#8).
• Right click on each region and enter the corresponding values from the following table. The remaining
settings will be left as default.
• Finally, click the Tile Regions button on the side tool bar.
• It may also be convenient to select View/Full from the main menu.
LaserMOD 3.0 User Guide Chapter 11: DFB Introduction and Uniform Grating Example • 221
Figure 173. Bias Editor
222 • Chapter 11: DFB Introduction and Uniform Grating Example LaserMOD 3.0 User Guide
Figure 174. Simulation mesh for DFB example
LaserMOD 3.0 User Guide Chapter 11: DFB Introduction and Uniform Grating Example • 223
Figure 176. Index profile – zoomed in on a few periods
224 • Chapter 11: DFB Introduction and Uniform Grating Example LaserMOD 3.0 User Guide
Figure 177. Mode calculation dialog
LaserMOD 3.0 User Guide Chapter 11: DFB Introduction and Uniform Grating Example • 225
Figure 178. Fundamental mode (left) and cross-cut along the quantum well (right)
• Perform a gain calculation to determine where to place the modes. The transmission peaks on either side of
the stop-band are most likely to lase. Which one depends on where gain is placed and on the facet phase.
• Open the Transmission Spectrum plot (generated during mode calculation) from the yellow icon on the
LaserMOD toolbar
• Click the “View Editor” button on the Winplot toolbar
• Add the line “tmp_Gain_5.rsf/sy5e-4” to the end of the script
• Click “View Plot” button to see the transmission (blue) and gain spectra (green) overlaid
226 • Chapter 11: DFB Introduction and Uniform Grating Example LaserMOD 3.0 User Guide
Figure 179. Transmission spectrum overlaid with material gain
LaserMOD 3.0 User Guide Chapter 11: DFB Introduction and Uniform Grating Example • 227
Figure 180. Simulation Dialog
228 • Chapter 11: DFB Introduction and Uniform Grating Example LaserMOD 3.0 User Guide
Figure 181. L-I-V curve for 4 mode simulation of uniform DFB
LaserMOD 3.0 User Guide Chapter 11: DFB Introduction and Uniform Grating Example • 229
Figure 182. Optical spectrum below (left) and above (right) the lasing threshold
230 • Chapter 11: DFB Introduction and Uniform Grating Example LaserMOD 3.0 User Guide
Chapter 12: DFB With Two
Uniform Gratings and a Phase
Shift
This tutorial will focus on the basic layout and simulation of a Distributed Bragg Reflector Laser (DBR). It is a
hypothetical example, for demonstration purposes. The uniform grating tutorial should be studied before proceeding
with this one.
• See file DFB_phaseshift.las .
• Multiple “grating” regions will be employed.
• The simulation plane will now be comprised of the growth (y) and lasing (x) directions. Note that x was
previously used to define a waveguide’s lateral dimension for FP lasers, and the radial dimension for
VCSEL’s.
• Resulting laser performance, including optical spectra above and below threshold, will be plotted and
examined.
LaserMOD 3.0 User Guide Chapter 12: DFB With Two Uniform Gratings and a Phase Shift • 231
Figure 183. Layout of DFB with central phase shift
• Duplicate region #2 to get region #9. Set region #9’s height to Dg and width to Lcav. Set its y ref to 2.
• Change the width of region #3 to Lgrat, and its x ref to #9 and y ref to #2.
• Duplicate region #3 to get region #10.
• Finally, click the Tile Regions button on the side tool bar. The two grating may be overlapping. Drag
region #10 to the left side of the layout and retile.
• It may also be convenient to select View/Full from the main menu.
232 • Chapter 12: DFB With Two Uniform Gratings and a Phase Shift LaserMOD 3.0 User Guide
Figure 184. Bias Editor
LaserMOD 3.0 User Guide Chapter 12: DFB With Two Uniform Gratings and a Phase Shift • 233
Figure 185.Nonuniform simulation mesh
234 • Chapter 12: DFB With Two Uniform Gratings and a Phase Shift LaserMOD 3.0 User Guide
Figure 186. Index profile showing the central phase shift and several periods to either side.
LaserMOD 3.0 User Guide Chapter 12: DFB With Two Uniform Gratings and a Phase Shift • 235
Figure 187. Mode calculation settings for fundamental mode
236 • Chapter 12: DFB With Two Uniform Gratings and a Phase Shift LaserMOD 3.0 User Guide
Figure 188. Mode profile (left) and cross-cut along quantum well (right) of fundamental mode
• Perform a gain calculation to determine where to place the modes. The transmission peaks on either side of
the stop-band are most likely to lase. Which one depends on where gain is placed and on the facet phase.
• Open the Transmission Spectrum plot (generated during mode calculation) from the yellow icon on the
LaserMOD toolbar
• Click the “View Editor” button on the Winplot toolbar
• Add the line “tmp_Gain_5.rsf/sy5e-4” to the end of the script
• Click “View Plot” button to see the transmission (blue) and gain spectra (green) overlaid
LaserMOD 3.0 User Guide Chapter 12: DFB With Two Uniform Gratings and a Phase Shift • 237
Figure 189. Transmission spectrum and material gain. Note the FP resonance in the middle of the stop-band. This is due to the
central phase shift.
238 • Chapter 12: DFB With Two Uniform Gratings and a Phase Shift LaserMOD 3.0 User Guide
Figure 190. Simulation settings
LaserMOD 3.0 User Guide Chapter 12: DFB With Two Uniform Gratings and a Phase Shift • 239
Figure 191. L-I-V curve for 4 mode simulation
240 • Chapter 12: DFB With Two Uniform Gratings and a Phase Shift LaserMOD 3.0 User Guide
Figure 192. Optical spectrum below (left) and above (right) lasing threshold. Note that the central FP resonance (middle of the
stop-band) is the preferred lasing mode. This can be seen by comparing the wavelength of each peak with Fig. 7.
LaserMOD 3.0 User Guide Chapter 12: DFB With Two Uniform Gratings and a Phase Shift • 241
Chapter 13: SOI Introduction and
Steady-State Waveguide
This tutorial introduces the use of LaserMOD to simulate modulators based on thermal and carrier dependent index
effects. A steady-state SOI waveguide example is also examined here in detail. This tutorial should be studied before
moving on to subsequent examples.
13.A. Introduction
What follows is a series of tutorials that demonstrate the use of LaserMOD to simulate active waveguide devices in
which the performance is governed primarily by free-carrier and/or thermo-optic effects found in semiconductors. These
processes are of interest in a wide variety of devices, such as modulators and switches, used in photonic integrated
circuits (PICs). They are present in a variety of material systems, though these tutorials will examine mainly Silicon on
Insulator (SOI) structures.
Justification
• Silicon photonics has received much attention since it promises the advantage of monolithic integration
with electronics (EPIC)
• Modulators are key components of optical communication systems, traditionally implemented using
electro-optic materials like lithium niobate or fabricated from III-V semiconductor compounds
• Silicon modulators exploit the index change associated with free-carrier absorption, but suffer from slow
operating speeds
• Physics based simulation can assist in improving the performance of such devices [1].
• Inclusion of carrier-transport gives a more accurate assessment of the thermo-optic effects when dealing
with semiconductor systems
Physics Summary
• Fully-couple solution of Poisson, carrier-continuity, and lattice heat equations
• Complex index update based on free-carrier absorption/electro-refraction and thermo-optic coefficients.
Carrier effect coefficients may include free-carrier absorption, Burnstein-Moss band filling, and coulombic
effects (bandgap renormalization) while pure-field based electro-optic effects such as Franz-Keldysh (or
QCSE), Pockel, and Kerr effects are not explicitly included and are assumed small in the
materials/structures of interest.
• Drude and Soref Models for free-carrier absorption/electro-refraction are available [2]
• Internal or external optical solvers available
LaserMOD 3.0 User Guide Chapter 13: SOI Introduction and Steady-State Waveguide • 243
• See Fig. 1
General Procedure
• Layout device cross-section in LaserMOD
• Simulate the device up to desired operating bias, with desired models enabled
• Use internal mode solvers to assess effective indecies
• Use LaserMOD Plot Generator to analytically Post-Process cross-section results into device performance
characteristics
• Or, export a complex index profile to an external solver, such as BeamPROP, to perform numerical 3D
propagation
• Or, scan over set of parameterized cross-sections in LaserMOD, and export a set of index profiles to
describe a complex 3D structure, which can then be simulated in BeamPROP, or other passive device tool
from Rsoft Design Group.
244 • Chapter 13: SOI Introduction and Steady-State Waveguide LaserMOD 3.0 User Guide
• SOI Time Dependent Waveguide: Transient simulation of a waveguide with free-carrier effects. Chapter
14.
• SOI Mach-Zehnder Modulator: Two methods, (i) Post-Processing and (ii) BeamPROP, to determine the
device performance of a Mach-Zehnder Modulator with free-carrier effects. Chapter 15.
• SOI Y-Branch: Exporting 3D index profiles to BeamPROP and simulation of a Y-Branch with free-carrier
effects. Chapter 16.
• SOI Directional Coupler: Exporting 3D index profiles to BeamPROP and simulation of a directional
coupler with thermo-optic effects. Chapter 17.
References
[1] RSoft Design Group, “Simulation of Carrier Dependent Absorption Effects in Silicon Optical Waveguide Devices”,
presented Photonics West, San Jose, CA, Jan. 2005.
[2] R. Soref, B. Bennett, “Electrooptical Effects in Silicon”, IEEE Journal of Quantum Electronic 23, 123 (1987).
LaserMOD 3.0 User Guide Chapter 13: SOI Introduction and Steady-State Waveguide • 245
Figure 194. Waveguide cross-section
246 • Chapter 13: SOI Introduction and Steady-State Waveguide LaserMOD 3.0 User Guide
• Draw 3 Oxide Regions (# 1,2,3) to represent the buffer and regrown silica. This is done by clicking the
RECT button on the side toolbar, and selecting the region type (OX button) from the grouping formed by
the next 6 buttons.
• Draw 2 Bulk Regions (# 4,5) to represent the silicon slab and ridge. (BULK button)
• Draw 3 Electrode Regions (# 6,7,8) to represent bias and ground contacts. (BIAS button)
• Right click on each region and enter the corresponding values from the following table. The remaining
settings will be left as default.
Region # Electrode Width Height x ref. x ref. to y ref. to Material Donors* Acceptors*
Group # Elem. # Elem. # System*
1 -- Wsub Hbuf Xo 0 0 Oxide 0 0
2 -- Wsub/2- Hridge -- 4 5 Oxide 0 0
Wridge/2
3 -- Wsub/2- Hridge -- 4 5 Oxide 0 0
Wridge/2
4 -- Wridge Hridge Xo 0 5 Si1550 0 PDop
5 -- Wsub Hsub Xo 0 1 Si1550 Ndop 0
6 0 Wridge -- Xo 0 4 -- -- --
7 1 Welec -- -Wsub/2 0 5 -- -- --
+Welec/2
8 1 Welec -- Wsub/2- 0 5 -- -- --
Welec/2
*In Set Material dialog
• Finally, click the Tile Regions button on the side tool bar. Note that the Regions 2 and 3 will overlay –
giving a warning. Simply drag the top one (Region 3) to the left of Region 4 and click Tile Regions once
more.
• It may also be convenient to select View/Full from the main menu.
• Additionally, since the Oxide material represents a generic insulator, it is probably desirable to override the
default dielectric value. This is done by defining and setting “kpmat_DIELOPT” = EpsOx in the
Physical Data Table of each Oxide Regions.
LaserMOD 3.0 User Guide Chapter 13: SOI Introduction and Steady-State Waveguide • 247
Figure 195. Bias parameters for steady-state
• Highlight bias 1 and increase the value of ramp pts to add more simulation points (say 10) between 0V
and 1V (these points are distributed between the highlighted bias’ value and the value of the previous bias.
This will improve the resolution of all the performance curves such as L-I and I-V. Note that all spatial
data (on the mesh) is only saved when the simulation reaches the value specified at each bias point in the
table…not at the intermediate points.
248 • Chapter 13: SOI Introduction and Steady-State Waveguide LaserMOD 3.0 User Guide
Figure 196. Default mesh (full-domain)
LaserMOD 3.0 User Guide Chapter 13: SOI Introduction and Steady-State Waveguide • 249
Figure 197. Profile generation dialog, Index settings
• View the different cross-cuts of the profile by right clicking along either axis. The unormalized values will
be displayed. Note that the full domain is displayed, even thought the simulation is on the right half…due
to symmetry. If different biases were applied to the ground electrodes the symmetry would be broken and
the full domain would need to be simulated.
250 • Chapter 13: SOI Introduction and Steady-State Waveguide LaserMOD 3.0 User Guide
13.I. Calculating the Modes
These devices are waveguides. It is therefore prudent to observe that a propagating mode exists before proceeding with
the modulator simulation. Click the Calculate Mode button on the side toolbar and specify the wavelength of interest,
1.55µm.
• View the different cross-cuts of the mode by right clicking along either axis. The unormalized values will
be displayed. Again, the full domain is displayed, even thought the simulation is on the right half. Note
that the plot grid is uniform and set by the #x pts & #y pts prior to clicking OK. This uniform grid is
populated via interpolation from the simulation (nonuniform mesh), so if parts of the simulation mesh are
too course, the plot may appear piecewise linear there, regardless of the uniform mesh resolution.
LaserMOD 3.0 User Guide Chapter 13: SOI Introduction and Steady-State Waveguide • 251
Figure 200. Mode profile
252 • Chapter 13: SOI Introduction and Steady-State Waveguide LaserMOD 3.0 User Guide
Figure 201. Simulation Parameters
LaserMOD 3.0 User Guide Chapter 13: SOI Introduction and Steady-State Waveguide • 253
13.K. Plotting the Simulation Results
All the simulation data has been saved in the <Run Prefix>_data\ subdirectory, during the simulation. Use the Generate
Plot utility to view desired results. The plots generated by this post-process will be stored in the <Run Prefix>_plot\
subdirectory, where they can be viewed any time. However, if the same plot is generated, but for a different bias point,
the old one will be overwritten. A variety of standard plots are available, as well as 3 categories of custom plots; data vs
bias (LI, IV, etc…) spatial data (mode, index, etc…), and energy data (gain, loss, etc…). Note that spatial and energy
data are saved only at the bias values explicitly specified in the Bias Table, while the bias data is saved at intermediate
points as well.
• From the Generate Plot dialog select Charge Carriers, Data vs Bias, and Spatial Data.
• Choose Plot Data for Bias # 1, since this is the highest bias simulated.
• Click the Set Custom button and select EffectiveIndex[0] (mode 0) for the Bias Data and
RefractiveIndexImag for the Spatial Data, since this will reflect the loss.
254 • Chapter 13: SOI Introduction and Steady-State Waveguide LaserMOD 3.0 User Guide
Figure 204. Effective index of the mode as a function of applied voltage (left) and current through the device (right), which was
obtained by setting the x-Axis parameter in the custom settings dialog to Current[0].
• Observe the change in the EffectiveIndex[0] due to the presence of carriers (decreases nearly
monotonically with current through the device). This is the mechanism behind electro-refractive (ER)
modulators, since this controls the optical path length of the waveguide.
• Now view the cross-cuts of the RefractiveIndexImag and Charge Carrier profiles.
Figure 205. Imaginary part of the index (loss) shown in contour (left) and cross-cut through the ridge (right).
LaserMOD 3.0 User Guide Chapter 13: SOI Introduction and Steady-State Waveguide • 255
Figure 206. Electron density (left) and cross-cut through the ridge (right)
• Notice that the Electron Density and Imaginary Refractive Index profiles have similar (albeit inverted)
shapes, indicating that the electrons dominate the loss in this structure. This is the mechanism behind
electro-absorptive (EA) modulators, since this controls the loss of the waveguide.
256 • Chapter 13: SOI Introduction and Steady-State Waveguide LaserMOD 3.0 User Guide
13.L. Appendix – Relevant Symbols
LaserMOD 3.0 User Guide Chapter 13: SOI Introduction and Steady-State Waveguide • 257
Chapter 14: SOI Transient
Waveguide
This tutorial demonstrate the use of LaserMOD to simulate the transient behavior of a SOI waveguide.
LaserMOD 3.0 User Guide Chapter 14: SOI Transient Waveguide • 259
Figure 207. Waveguide cross-section
260 • Chapter 14: SOI Transient Waveguide LaserMOD 3.0 User Guide
Figure 208. Bias settings for transient simulation
LaserMOD 3.0 User Guide Chapter 14: SOI Transient Waveguide • 261
Figure 209. Transient simulation settings
262 • Chapter 14: SOI Transient Waveguide LaserMOD 3.0 User Guide
Figure 210
• In the Set Custom dialog choose Bias Data settings as shown below. The x Axis Parameter is used for
normalization of the frequency response but is irrelevant for the transient response. Note that since Spatial
Data and Energy Data are not stored for all time, they are irrelevant here.
LaserMOD 3.0 User Guide Chapter 14: SOI Transient Waveguide • 263
• Also, the background value of EffectiveIndex[0] has been subtracted off to give a better view of the
transient response, by setting “3.3941-y” in the y Operation field. It is easy to see where this number
comes from, by generating the plot without this modification.
Figure 211
Figure 212. Transient response without background (just the perturbation) is shown left, and the corresponding frequency response,
normalized by the current, is shown right.
264 • Chapter 14: SOI Transient Waveguide LaserMOD 3.0 User Guide
14.F. Appendix – Relevant Symbols
LaserMOD 3.0 User Guide Chapter 14: SOI Transient Waveguide • 265
Chapter 15: SOI Mach-Zehnder
Modulator
This tutorial demonstrate the use of LaserMOD to simulate an SOI Mach-Zehnder modulator.
LaserMOD 3.0 User Guide Chapter 15: SOI Mach-Zehnder Modulator • 267
Figure 213. Waveguide x-y plane cross-section (left) and device topology in x-z plane (right). While the waveguide cross-section is
the same everywhere along the modulator, the bias conditions for each branch will differ, causing their optical pathlength to change,
driving the device between constructive (ON-State) and destructive (OFF-State) interference at its output port.
Method 2:
• Run a steady-state simulation of the waveguide, as in Chapter 13.
• Layout a 3D User Profile based Mach-Zehnder topology in RSoft CAD, (see manual for RSoft CAD
Layout), or refer to the example file provided (SOI_mz.ind).
• Each steady-state simulation will produce an <Run Prefix>.ipf file which can be accessed by name from
each waveguide in the topology layout. Here, two will be used, one for the ON-state bias and one for the
268 • Chapter 15: SOI Mach-Zehnder Modulator LaserMOD 3.0 User Guide
OFF-state. In the ON-state, the same index profile (at 0V) will be applied to all waveguide segments in the
topology, so no optical path length difference will exist. In the OFF-state, a second index profile (.ipf file
at some finite volatge) will be applied to one of the arms of the modulator, creating destructive interference
at the output. Here, for convenience, we will exploit Method 1 to determine the ON-state voltage, but in
general, all voltages can be scanned over, via a script, to determine the ON-state purely numerically.
15.D. Method 1
A similar procedure is used as in Chapter 13, except for the following modifications.
• In the Bias Table enable only the steady-state bias points (0 & 1) and highlight bias 1. Increase ramp pts
to 50, so we get good resolution for the device characteristic.
• Open the Simulate Laser button and make sure Carrier Dependent Index is enabled. The optical LIV
curve of the device will be plotted as the simulation runs, but the output light will be zero since no photons
have been generated.
All the simulation data has been saved in the <Run Prefix>_data\ subdirectory, during the simulation. So if the
simulation window has been closed, use the Generate Plot utility to view desired results, or open the L-I-V curve via the
View Graph icon on the top toolbar.
• Add the following variables to the Global Symbol Table. Note that these can be varied and plots can be
regenerated, without having to rerun the simulation.
LaserMOD 3.0 User Guide Chapter 15: SOI Mach-Zehnder Modulator • 269
Variable Value Description
K0 (2*pi/1.55)*(180/pi) Free-space wavevector in degrees
L 3000 Length of biased branch
Neff_OFF 3.3936 Effective index for OFF-state (~1V)
Neff_ON 3.3938 Effective index for ON-state (~0V)
• The effective indecies of the ON and OFF-states can be determined as follows. In the Generate Plot
dialog disable all plots except for Data vs Bias. In the Set Custom dialog choose Bias Data settings as
shown below.
270 • Chapter 15: SOI Mach-Zehnder Modulator LaserMOD 3.0 User Guide
Figure 216. Effective index vs voltage
• Neff_ON can be now read off of Fig. 4, and used to determine Neff_OFF. Use the phase formula above to
determine the index difference required for a π phase change (where λ=1.55µm and L=3000µm). It should
be ~2e-4. See table above for final values.
• Finally, the device characteristics can be determined. In the Set Custom dialog choose Bias Data settings
as shown below. This is the full formula for the optical transmission through the modulator. Fig. 6 shows
the first linear control regime.
LaserMOD 3.0 User Guide Chapter 15: SOI Mach-Zehnder Modulator • 271
Figure 217. Mach-Zehnder transfer characteristic via post-process plotting
272 • Chapter 15: SOI Mach-Zehnder Modulator LaserMOD 3.0 User Guide
Figure 218. Normalized transmission vs voltage of Mach-Zehnder modulator comprised of the waveguide under study. The first
regime where ~linear control over this device is possible occurs at ~8.5-9V.
15.E. Method 2
A similar procedure is used as in Tutorial SOI-T1, except for the following modifications.
• In the Global Parameters dialog, uncheck Use Half Domain in x, so the full domain index profiles will be
generated.
• In the Global Symbol Table add a variable, V, and set it to 1.
• In the Bias Table enable only the steady-state bias points (0 & 1) and highlight bias 1. In the Advanced
dialog, increase n_steps to 50, so we insure accurate convergence at each point. Set the value of bias 1 to
V. This will be needed for scanning.
LaserMOD 3.0 User Guide Chapter 15: SOI Mach-Zehnder Modulator • 273
Figure 219. Variable for bias voltage
• Open the Perform Parameter Scan dialog and select the settings as shown below.
274 • Chapter 15: SOI Mach-Zehnder Modulator LaserMOD 3.0 User Guide
• The scan will create <Scan Output Prefix>00.ipf and <Scan Output Prefix>01.ipf, which are the index
profiles at 0V (ON-state) and 1V (OFF-state), respectively. It will also create <Scan Output Prefix>.ind,
which is a BeamPROP file that already refers to these profiles. Either open <Scan Output Prefix>.ind and,
by cutting and pasting the waveguide segments, create a Mach-Zehnder modulator, or just open file
SOI_mz.ind.
• With a BeamPROP opened, calculate a mode to use as the launch field: (a) in the Launch Dialog choose
fiber mode & y-position=1, (b) in the Mode Dialog goto Mode Options and set Neff Min=3 and Neff
Max=4, and (c) set the same <Scan Output Prefix> before clicking OK.
• Close and reopen the file to reset it for a propagation (all profiles should be <Scan Output Prefix>00.ipf,
i.e. User 1). Run a propagation. This should produce ON-state results since each branch refers to a the
same profile.
• Right click on either branch and change the profile to <Scan Output Prefix>01.ipf (i.e. User 2). Rerun the
propagation to produce OFF-state results.
LaserMOD 3.0 User Guide Chapter 15: SOI Mach-Zehnder Modulator • 275
Figure 222. OFF-state propagation at 1V.
276 • Chapter 15: SOI Mach-Zehnder Modulator LaserMOD 3.0 User Guide
Variable Value (Si) Description
fca_elcoef 8.5e-018 Electron absorp change coef (Da)
fca_hlcoef 6e-018 Hole absorp change coef (Da)
fcn_elcoef -8.8e-022 Electron index change coef (Dn)
fcn_hlcoef -8.5e-018 Hole index change coef (Dn)
fcn_hlexp 0.8 Hole exponent for index change (Soref Model)
LaserMOD 3.0 User Guide Chapter 15: SOI Mach-Zehnder Modulator • 277
Chapter 16: SOI Y-Branch
16.A. 3D Y-Branch
This tutorial will build on what was discussed in Tutorials SOI-T1 through SOI-T3. The focus here will be on
examining a case where the combined LaserMOD and BeamPROP approach is needed due to lack of availability of an
analytic expression to be used in the plot post-processor.
• See file SOI_branch.las
• Two approaches will be examined, one where the same profile is used everywhere and the BeamPROP
layout controls the 3D structure, and a second, where multiple slices are generated and no additional
topological layout is required
Figure 227. Scan settings for 5 slices, each with a different separation, starting with perfect overlap of the 2 ridges (i.e. a profile of
the waveguide before the branch splits)
Figure 228. x-z plane topologies (top) and index profiles (bottom) at y=2 (through the ridge) showing the two waveguide approach
(left) and the five slice approach (right).
This tutorial demonstrate the use of LaserMOD to simulate an SOI Directional Coupler.
LaserMOD 3.0 User Guide Chapter 17: SOI Directional Coupler • 289
Figure 231. Cross-section of ridge waveguide coupler
290 • Chapter 17: SOI Directional Coupler LaserMOD 3.0 User Guide
Figure 232. Mesh (left) and mode profile (right) when left ridge has same properties as oxide
LaserMOD 3.0 User Guide Chapter 17: SOI Directional Coupler • 291
17.D. Generating the Coupler Profile
To create the full coupler profile, simply rerun the full laser simulation.
• Open file SOI_coupler.las again. Note that the Generate Aggregate .ind File box is checked in the
Perform Parameter Scan dialog, so file are conveniently copied the the problem directory.
• Run the full simulation, making sure both Self-Heating and Temperature Dependent Index are enabled.
This will generate the full coupler profile for the BeamPROP propagation.
• Verify that the temperature has perturbed the index profiles by clicking the Generate Plot button and
selecting Spatial Plot, and LatticeTemp in the Set Custom Dialog. Also plot the RefractiveIndexReal.
Results due to a 1V bias applied to the top electrodes are shown below. The temperature and index
profiles are shown with cross-cut’s of each taken at y~1.4um.
Figure 234. Lattice temperature profile in contour (left) and cross-cut (right)
Figure 235. Index perturbation due to temperature. Difficult to see in contour (left) but clearly visible in cross-cut at y=1.4µm.
292 • Chapter 17: SOI Directional Coupler LaserMOD 3.0 User Guide
• Open file SOI_coupler.ind again an run a propagation.
• Finally, repeat all previous steps in sections C. & D. but without self-heating enabled.
• Observe (see Fig. 6) the difference in coupling length due to the temperature dependent index perturbation.
Figure 236. Unperturbed coupling (left) and shortened coupling length (right) due to temperature dependent index.
LaserMOD 3.0 User Guide Chapter 17: SOI Directional Coupler • 293
17.F. Appendix – Relevant Symbols
294 • Chapter 17: SOI Directional Coupler LaserMOD 3.0 User Guide
Appendix A: Troubleshooting
This appendix contains some suggestions about what to do if problems arise during a simulation. Some guidelines are
also presented for minimizing the occurance of problems.
This appendix contains the file formats used by LaserMOD and other RSoft device design tools. Because many of the
data files are compatible, the tools can receive as input, the output results of other tools. This is one of the mechanisms
through which LaserMOD has been integrated with the rest of the device tool suite.
Except where noted, all files are in ASCII text format. For further information, contact RSoft.
/rn,a,b/nx0/ls1
<#pts> <min Lambda (um)> <max Lambda (um)> 0 OUTPUT_REAL
<ref @ min lambda>
<ref @ next lambda>
<ref @ next lambda>
Element Type # Periods Material System Alloy X Alloy Y Thickness (um) Doping (cm-3)
elec 1 none 0 0 positive # 0
bulk 1 any 0-1 0-1 positive # +/- (n/p type)
graT 1 or more any 0-1 0-1 positive # +/- (n/p type)
graB 1 or more any 0-1 0-1 positive # +/- (n/p type)
dbrT 1 or more any 0-1 0-1 positive # +/- (n/p type)
dbrB 1 or more any 0-1 0-1 positive # +/- (n/p type)
well 1 or more any 0-1 0-1 positive # +/- (n/p type)
barr 1 or more any 0-1 0-1 positive # +/- (n/p type)
/rn,a,b/nx0/ls1
/r,qa,qb
Nx Xmin Xmax Zpos Output_Type Optional_Data
Ny Ymin Ymax
… …
Data(Xmax, Ymin) … Data(Xmax, Ymax)
Example 1:
The following file contains the real-valued function ƒ(x)=x2 over the domain x W [0,1] with X x=0.1:
/rn,a,b/nx0/ls1
11 0 1 0 OUTPUT_REAL
0.00
0.01
0.04
0.09
0.16
0.25
0.36
0.49
0.64
0.89
1.00
/rn,a,b/nx0/ls1
11 0 1 0 OUTPUT_REAL_IMAG
0.00 0.000
0.01 0.001
0.04 0.008
0.09 0.027
0.16 0.064
0.25 0.125
0.36 0.216
0.49 0.343
0.64 0.512
0.89 0.729
1.00 1.000
Example 3:
The following file contains the real-valued function ƒ(x,y)=xy over the domain x Y [1,2] with
x=0.25 and y [0,1] with x=0.5
Y
/rn,a,b/nx0/ls1
/r,qa,qb
5 1 2 0 OUTPUT_REAL_3D
3 0 1
0.000 0.500 1.000
0.000 0.625 1.250
0.000 0.750 1.500
0.000 0.875 1.750
0.000 1.000 2.000
Example 4:
The following file contains the complex-valued function ƒ(x,y)=x+iy over the domain x Y [1,2] with
x=0.25 and y [0,1] with x=0.5
Y
/rn,a,b/nx0/ls1
/r,qa,qb
5 1 2 0 OUTPUT_REAL_IMAG_3D
3 0 1
1.00 0.0 1.00 0.5 1.00 1.0
1.25 0.0 1.25 0.5 1.25 1.0
1.50 0.0 1.50 0.5 1.50 1.0
1.75 0.0 1.75 0.5 1.75 1.0
As noted elsewhere, virtually any numeric input field in any RSoft product can accept an analytical expression involving
pre-defined and user-defined variables which are defined in the symbol table. In this appendix, we discuss the form that
these expressions can take, the allowed operators, and the built-in functions that are available.
Expressions are written in the common form accepted by most programming languages (e.g. C or Fortran), and can
include numbers, variables, arithmetic operators, and function calls. They are currently limited in length to 64
characters.
Note that if an operator or function required by your application is not listed below, please contact RSoft and we will
attempt to add it to the next release.
Built-in Variables
RSoft supports several built-in variables. These variables may be used in the symbol table, or in any numeric field
within the software. These variable names should be avoided when creating your own variables to avoid conflict.
Variable Value
inf infinity
c 2.9979246e014 µμm/s
e 2.718281828
Standard Functions
RSoft expressions support many of the standard function calls found in programming languages, as well as several
functions useful in the context of defining waveguide profiles or tapers. The standard functions are:
Function Description
abs(x) absolute value
exp(x) exponential
log(x) natural logarithm
sqrt(x) square root
cos(x) cosine
sin(x) sine
tan(x) tangent
acos(x) inverse cosine
asin(x) inverse sine
atan(x) inverse tangent
erf(x) error function
erfc(x) complementary error function
ceil(x) truncate up to next higher integer
floor(x) truncate down to next lower integer
round(x) round to nearest integer
min(x1,x2,…) minimum of arguments in list
max(x1,x2,…) maximum of arguments in list
Additional Functions
These functions are not standard functions used elsewhere, but are available to allow for the creation of certain
structures.
• u(x)
This is the unit step function, defined as
1 x>0
• um(x)
This is a variation of u(x), defined as
P
M 0 x<0
O
um( x) = 0 x = 0 NM
1 x>0
• up(x)
This is a variation of u(x), defined as
P
M 0 x<0
O
up( x) = 1 x = 0 NM
1 x>0
• clip(x)
This function is defined as
P
M 0 x<0
O
clip( x) = x 0 ≤ x ≤ 1 NM
1 x >1
• step(x)
This function is a periodic step function, defined as
P
1 0 ≤ x < 0.5
{ x ∈ [0,1)}
O N
step( x) =
0 0.5 < x < 1
and is periodically extended outside this range. This function is useful for defining grating structures or
segmented waveguides.
• step2(x,a)
This function is a variation of step(x), where the duty cycle can be controlled by the second argument a.
It is defined as
P
1 0≤ x<a
{ x ∈ [0,1)}
O N
step 2( x, a) =
0 a < x <1
and is periodically extended outside this range. The parameter a must be between 0 and 1. This function is
useful for defining grating structures or segmented waveguides.
• sign(x)
This function returns the sign of the argument x. It is defined as
• slabneff(p,m,lambda,nc,ns,nf,h)
This special function computes the effective index of a 3-layer slab waveguide mode. The arguments are:
Argument Description
p polarization(0=TE, 1=TM)
m mode number(0=fundamental)
lambda free space wavelength (µμ)
nc cover index
ns substrate index
nf film or guiding layer index
h thickness of film or guiding layer
• ranseq(int seed, int i)
This deterministic function returns a “random” result for a given pair of arguments. A typical use would be
to define one or more seed variables in the symbol table, and then use this function within a waveguide
with the same i index variable. This allows two or more fields within the segment to be correlated.
Changing the seeds within the symbol table will result in different random numbers.
The distribution is linear between -0.5 and 0.5, and several special seeds are recognized: 0 returns 0.0, -1
returns 0.5, and -2 returns -0.5.
• ranline(int seed, double corlen, double z)
This is a deterministically random function of a continuous variable z with a correlation-length of corlen.
The seed variable behaves like ranseq().
This Appendix itemizes the various built-in parameters indigenous to each Symbol Table employed by LaserMOD. As
stated, these tables comprise a two level heirarchy, headed by a global Symbol Table, in which parameters may be
defined that can be seen by all tables. And two categories of local Symbol Tables in which paramters may be defined,
but cannot be seen by other tables. These are the Physical Data tables, for material and region parameters, and Advanced
tables, for bias point parameters.
The following is the list of symbols which are defined in the symbol table by LaserMOD. They correspond to the
options which are set via the GUI. They are provided for two reasons:
• When creating user-defined variables, you should avoid using these variable names as you can
inadvertently change aspects of the simulation.
• Advanced users who wish to control aspects of LaserMOD via the symbol table can edit these symbols
directly. This is identical to using the GUI.
Additional Parameters for Wurtzite Systems (above are for Zinc Blend):
Parameter Symbol: Description: Units:
wz_latt_a Lattice constant along a A (300K)
wz_latt_c Lattice constant along c A (300K)
wz_Eg Direct energy gap eV (300K)
wz_Eg_A Energy gap coef A eV/K
wz_Eg_B Energy gap coef B K
wz_split_cr Crystal field splitting eV
wz_split_so Spin orbit splitting eV
wz_mel_a Electron effective mass along a mo
wz_mel_c Electron effective mass along c mo
wz_A1 Luttinger Parameter --
wz_A2 Luttinger Parameter --
wz_A3 Luttinger Parameter --
wz_A4 Luttinger Parameter --
wz_A5 Luttinger Parameter --
The temperature dependence of the energy gaps is assume to obey theVarshni expresssion:
Eg(T) = Eg(300) + A(T/(1.0 + B/T) - Tref/(1.0 + B/Tref))
Tref = 300K
Additionally, all materials in the library have been adjusted to use band-discontinuity ratio to determine the hole affinity
(kpmat_HLAFF = HLAFF_DISCONT), although the linearly interpolated value (kpmat_HLAFF = HLAFF_LINEAR) is also
available. The following are now defined in each material library file
In general, users may replace the alloy interpolation formulae in the library (.mat) files (or create new ones) to suit their
needs. However, this is currently limited by the "kpmat_" parameters to the following interpolation schemes as specified
by the following material parameter.
Library ID's are determined from the following table (the ID strings below are the allowed values for the
Interpolation_Scheme parameter).
References
[1] O. Madelung, "Semiconductors – Basic Data", 2nd Ed., Springer-Verlag, Berlin, 1996.
[2] S.L. Chuang, “Optical Gain of Strained Wurtzite GaN Quantum-Well Lasers,” IEEE JQE, Vol. 32, No. 10, OCT.
1996 p.1791.
[3] I. Vurgaftmana, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and
their alloys,” JAP, Vol. 89, No. 11, 1 June 2001, pp. 5815-75.
This Appendix describes the the plotting programs and utilities available with LaserMOD. Furthermore there is a
command line utility, bdutil, that is employed by LaserMOD for converting the nearfield into the farfield. It has
additional functionality which its described here for completeness.
E.1. WinPLOT
Winplot is a self-contained, script driven, plotting program for displaying a variety of raw data files, and manipulating
that data for viewing.
Use WinPLOT to display all plots, zoom in on a region of the plot, adjust the data, or display static 3D surface plots.
To open a file with WinPLOT, select the yellow, View Graphs, button on the top toolbar of the interface, or from the
Graph pulldown menu option, View Graph.
NOTE:
A separate, comprehensive manual for this program, \RSoft\docs\Rplot.pdf, is provided with the software distribution
and is also accessible via the OnLine Help button on the WinPLOT toolbar or pulldown menu, when the program is
running. Please refer to this manual for more information on WinPLOT.
Also, WinPLOT has been improved recently to include a wide variety of 3D and crosscutting capabilities. For this
reason the use of CPLOT (a separate plotting utility distributed with older versions of LaserMOD) has been
discontinued.
E.3. RglPLOT
RglPLOT is a self-contained plotting program, for displaying and manipulating surface plots in 3D. It is based on
OpenGLTM and the useful feature of this program is that all angles and zoom scales of the data are under direct mouse
control. Furthermore, this is the only utility that allows viewing of the data as it exists on the nonuniform mesh. All
other utilties interpolate onto a uniform mesh for viewing.
Use RglPLOT to display dynamic (mouse driven) 3D surface plots.
Mouse Commands:
Recognized Files:
Syntax
bdutil supports the following syntax and options:
Overlap Integrals: -i
This switch indicates that an overlap integral should be performed. The correct syntax for this option is:
S ( x) = h( x)dx
x1
2. If two data files are given which contain functions f (x ) ƒ(<i>x</i>) and g (x ) <i>g</i>(<i>x</i>)
respectively, the utility calculates the overlap integral of these functions. This is defined by
x2
f ( x) g * ( x)dx
S ( x) =
x1
_ \ 1 _ \ 1
] x2 Z 2 ] x2 Z 2
] * Z ] * Z
^
f ( x) f ( x)dx [ ^
g ( x) g ( x)dx [
x1 x1
where the asterisk denotes the complex conjugate. The program returns values for both
2
S (x) <i>S</i>(<i>x</i>) and S (x) |<i>S</i>(<i>x</i>)|<sup>2</sup>. Since a complex conjugate is
taken, the order in which the files are input is important.
3. If a weight function σ (x ) σ(<i>x</i> is given in addition to two data files, the utility calculates the
overlap integral using the form
f ( x)σ ( x) g * ( x)dx
S ( x) =
x1
_ \ 1 _ \ 1
] x2 Z 2 ] x2 Z 2
] * Z ] * Z
^
f ( x) f ( x)dx [ ^
g ( x) g ( x)dx [
x1 x1
where the asterisk denotes the complex conjugate. The program returns values for both
2
S (x) <i>S</i>(<i>x</i>) and S (x) |<i>S</i>(<i>x</i>)|<sup>2</sup>. Since a complex conjugate is
taken, the order in which the files are input is important.
eg. To calculate the integral of a function f (x) ƒ(<i>x</i>), contained in a file field.fld over a
range of (-3,2):
bdutil –i –wx-3,2 field.fld
eg. To calculate the overlap integral between two data files, field1.fld and field2.fld, with the
default limits of integration and also squaring the first field:
bdutil –i –sq1 field1.fld field2.fld
eg. To calculate the overlap integral between two data files, field1.fld and field2.fld, with a
weight file, weight.fld, over the range (-2.3, 6.1), use the command:
bdutil –i –wx-2.3,6.1 field1.fld field2.fld weight.fld
Coupling Coefficients: -k
This switch calculates the coupling coefficient, kappa, between two modes traveling in opposite directions in a grating.
The correct syntax for this calculation is:
bdutil -k [options] mode-file1 mode-file2 index-file1 index-file2
At this time, there are no valid options for this switch. This switch requires four files to be input: two index profiles
corresponding to the peak and mean index perturbation of the grating and two mode files which correspond to the two
modes being studied. These files need to be in the file format specified in Appendix B for index profiles (.ipf) and
mode files (.m00) respectively. They can be produced directly with rSoft software or through any other means as long
as the file format is correct.
eg. To calculate the coupling coefficient between a forward mode, mode1.m00, and a backward mode, mode2.m00, in a
grating with a peak index profile of index1.ipf and a mean index profile of index2.ipf:
bdutil -k mode1.m00 mode2.m00 index1.ipf index2.ipf
The utility will produce both the real and imaginary parts of kappa, as well as the effective index of the grating. Kappa
is defined as:
This is consistent with the book: Raman Kashyap, “Fiber Bragg Gratings,” Academic press, 1998, pp.143, equation
(4.3.6). It is also consistent with the paper: P. Correc, “Coupling Coefficients for Trapezoidal Gratings,” IEEE Journal
of Quantum Electronics, Vol. QE-24, No. 1, 1988, pp.8, equation (1), (2) and (3).
For more information on the coupling coefficient and background on coupled mode theory used, see the document
KAPPA.DOC located in the C:\ rsoft\docs directory.
e.g. To tilt the file mode.m00 in the XZ plane by 30 degrees and save the result in the file mode_tile.m00:
bdutil –rp30 mode.m00 mode_tile.m00
e.g. To translate the file mode.m00 by 3 microns in the X direction, and 2 microns in the Y direction and save the result
in the file mode2.m00:
bdutil –tx3 –ty2 mode.m00 mode2.m00
eg. the far field projection of a field file field.fld given as intensity as a function of angle with an angular resolution
of 0.1 degrees at a wavelength of 1.55 µμm in a material with a refractive index of 1.5 can be saved in a file
field2.fld:
bdutil –fa –da.1 –l1.55 –n1.5 field.fld field2.fld
eg. The field profile for the above case after a distance of 100 µμm:
bdutil –f100 –r –l1.55 –n1.5 field.fld field2.fld
This Appendix describes file formats required for the Look-Up Table Gain model. These files must be obtained for a
sufficient range of carrier density and temperature for each desired alloy composition of the quantum well material
system. These must include the real and imaginary parts of the gain spectra and the spontaneous emission spectra. An
index file that identifies all the present data files should also be included.
All table gain data & index files are stored in \RSoft\products\lasermod\tablegain.
Currently an InGaAs 980 database is availablie in resides in \RSoft\products\lasermod\tablegain
ingaas980nm when installed.
for example:
rsoft300re10.00_0.050 300 0.050e+12 1576 1 0 0
rsoft300re10.00_0.100 300 0.100e+12 1576 1 0 0
rsoft300re10.00_0.170 300 0.170e+12 1576 1 0 0
rsoft300im10.00_0.050 300 0.050e+12 1576 0 1 0
rsoft300im10.00_0.100 300 0.100e+12 1576 0 1 0
rsoft300im10.00_0.170 300 0.170e+12 1576 0 1 0
rsoft300sp10.00_0.050 300 0.050e+12 1545 0 0 1
rsoft300sp10.00_0.100 300 0.100e+12 1545 0 0 1
rsoft300sp10.00_0.170 300 0.170e+12 1545 0 0 1
Users may purchase such a database for their specific geometry and material system.
Contact RSoft Design Group (see title page) for more information.
The data within the database is grouped in a set of libraries providing spectra for different quantum well/barrier material
systems and target emission wavelength of the laser. Within a library the gain, refractive index, and photoluminescence
spectra are tabulated for varying wavelength, temperature, carrier density, alloy composition of quantum wells/barriers,
and quantum well width to allow the user to investigate variations in the active region design.
The microscopic calculation of gain/absorption, refractive index, and photo-luminescence spectra is described in detail in
references 1-4 below and references therein. It is based on solving the semiconductor Bloch equations, i.e. the equations
of motions for the reduced density matrix, to obtain the optical susceptibility of the quantum well system. The real part
of the susceptibility gives the carrier induced change of the refractive index and the imaginary part gives the
gain/absorption. The photo-luminescence is derived from the gain/absorption using the Kubo-Martin-Schwinger relation.
Coulomb-induced effects like bandgap renormalization, Coulomb enhancement of the absorption and excitonic
resonances are taken into account self-consistently. The electron-electron and electron-phonon scattering processes are
calculated in a second Born approximation enabling the prediction of spectral broadening and spectral shifts. The
resulting scattering equations take the form of generalized quantum Boltzmann equations.
Figure F-240. Measured (green) and calculated (blue) on-wafer PL spectra at low densities. Measured (black dots) and calculated
(red) inverted semiconductor gain spectra at different carrier densities. Structure: In0.19Ga0.81As with GaAs barriers.
The InGaAs 980nm Gain Library contains gain/refractive index/spontaneous emission spectra for InGaAs quantum wells
embedded in GaAs barriers. The data is tabulated for Indium concentrations ranging from 8% to 24% and quantum well
widths ranging from 8nm to 20nm targeting a laser emission wavelength of 980nm. The spectra cover temperature
variations from 275K to 500K and variations of the carrier concentration up to 2×1013 cm-2 sheet density.
References
[1] J. Hader, et al., IEEE Photon Technol. Lett., Vol.14, No.6, 762 (2002)
[2] J. Hader, et al., Sol. Stat. Electron., 47 (3), 513 (2003)
[3] J. Hader, et al., IEEE J. Quantum Electron., Vol.35, No. 12, 1878 (1999)
[4] W.W. Chow, S.W.Koch, "Semiconductor-Laser fundamentals, Physics of the Gain Materials”, Springer, Berlin
1999.
This chapter contains a listing of all the material data (.mat files) distributed with LaserMOD. These reside in
<rsoft_dir>\products\lasermod\materials.
Unless otherwise specified, these parameters are from [1]. Wurtzite parameters come mainly from [4].
Several local or auxilliary variables are typically defined in the material files to clearify the parametric expressions.
These are otherwise not recognized by the simulation, and can vary from file to file. By convention, these variables are
either capitalized or contain the word "help" somewhere in the name.
Additionally, the alloy parameters (capital) X and Y are provided in each file for convenience. From the material file
editor, a user can adjust the alloy composition and immediately observe the resulting values for the entire parameter set.
The simulation does this automatically when it loads material data.
AlAs
The default material parameters for AlAs are stored in AlAs.mat.
DEv_DEg_REF 0.33
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 6.084
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 1
arora_eldopexp2 0
arora_elmudop 0.001
arora_elmudopexp 0
AlGaAs
The default material parameters for AlGaAs are stored in AlGaAs.mat. EgG_BOWING1 is from [2].
AlGaAsSb
The default material parameters for AlGaAsSb are stored in AlGaAsSb.mat.
DEv_DEg_REF 0.35
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
EgG_AlAsSb YY*3.018+(1-YY)*2.3-0.8*YY*(1-YY)
EgG_AlGaAs XX*3.018+(1-XX)*1.424-(1.31*XX-0.127)*XX*(1-XX)
EgG_AlGaSb XX*2.3+(1-XX)*0.726-(1.22*XX-0.044)*XX*(1-XX)
(EgG_X+EgG_Y-0.48*XX*(1-XX)*YY*(1-YY))/(XX*(1-
EgG_BOWING XX)+YY*(1-YY))
EgG_GaAsSb YY*1.424+(1-YY)*0.726-1.43*YY*(1-YY)
EgG_LINEAR X*Y*3.018+(1-X)*(1-Y)*0.726+(1-X)*Y*1.424+X*(1-Y)*2.3
EgG_X XX*(1-XX)*((1-YY)*EgG_AlGaSb+YY*EgG_AlGaAs)
EgG_Y YY*(1-YY)*(XX*EgG_AlAsSb+(1-XX)*EgG_GaAsSb)
EgX_AlAsSb YY*2.161+(1-YY)*1.63-0.28*YY*(1-YY)
EgX_AlGaAs XX*2.161+(1-XX)*1.911-0.055*XX*(1-XX)
EgX_AlGaSb XX*1.63+(1-XX)*1.0325-0*XX*(1-XX)
EgX_BOWING (EgX_X+EgX_Y-0.807*XX*(1-XX)*YY*(1-YY))/(XX*(1-
DEv_DEg_REF 0.28
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
EgG_BOWING 0.36+2.093*X*Y+0.629*(Y-X*Y)+0.577*X*Y*X*Y+Eg_HELP
0.436*(Y-X*Y)*(Y-X*Y)+1.013*X*Y*(Y-X*Y)-2.0*X*Y*(Y-
Eg_HELP X*Y)*(1-Y)
EgG_LINEAR X*Y*3.018+(Y-X*Y)*1.424+(1-Y)*0.354
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR X*Y*6.084+(Y-X*Y)*5.494+(1-Y)*5.224
HLAFF_REF 5.494
Interpolation_Scheme AxyBy_xyC1_yD
X 0
Y 0
arora_eldopexp1 X*Y+(Y-X*Y)*0.394+(1-Y)*0.32
arora_eldopexp2 0
arora_elmudop X*Y*0.001+(Y-X*Y)*0.05+(1-Y)*0.1
arora_elmudopexp 0
arora_elnref X*Y*5.46e23+(Y-X*Y)*6e22+(1-Y)*1.1e24
arora_elnrefexp -3
arora_hldopexp1 X*Y*0.448+(Y-X*Y)*0.38+(1-Y)*0.46
arora_hldopexp2 0
arora_hlmudop X*Y*0.001+(Y-X*Y)*0.002+(1-Y)*0.002
arora_hlmudopexp 0
arora_hlnref X*Y*3.84e23+(Y-X*Y)*1.48e23+(1-Y)*1.1e23
arora_hlnrefexp -3
bg_absorption 0
eff_tunnel_length 3*Y+7*(1-Y)
eff_tunnel_priority 0
fca_elcoef 2E-18
fca_hlcoef 1.3E-17
haensch_tunnel_length 1
hfmob_elfield0 400000
hfmob_elvsat 72000
AlGaInP
The default material parameters for AlGaInP are stored in AlGaInP.mat.
DEv_DEg_REF 0.395
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_BOWING (up(X)-up(X-0.6))*0.6*X+(up(X-0.6)-um(X-1.0))*0.36+Eg_GaInP
Eg_GaInP 1.35+0.643*Y+0.786*Y^2
Eg_LINEAR X*Y*3.62+(1-X)*Y*2.78+(1-Y)*1.344
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR X*Y*6.054+(1-X)*Y*6.054+(1-Y)*5.684
HLAFF_REF 5.494
Interpolation_Scheme AxyBy_xyC1_yD
X 0
Y 0
arora_eldopexp1 Y*0.8+(1-Y)*0.42
DEv_DEg_REF 0.3
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR X*8.134+(1-X)*7.334
HLAFF_REF 5.494
Interpolation_Scheme AxB1_xC
X 0
Y 0
arora_eldopexp1 X*0.66+(1-X)*0.66
arora_eldopexp2 X*0.81+(1-X)*0.81
arora_elmudop X*0.0295+(1-X)*0.0295
arora_elmudopexp X*-1.02+(1-X)*-1.02
arora_elnref X*1e+23+(1-X)*1e+23
arora_elnrefexp X*3.02+(1-X)*3.02
arora_hldopexp1 X*0+(1-X)*0
arora_hldopexp2 X*0+(1-X)*0
arora_hlmudop X*0+(1-X)*0
arora_hlmudopexp X*0+(1-X)*0
arora_hlnref X*0+(1-X)*0
arora_hlnrefexp X*0+(1-X)*0
bg_absorption X*0+(1-X)*0
eff_tunnel_length X*3+(1-X)*3
eff_tunnel_priority X*0+(1-X)*0
fca_elcoef X*0+(1-X)*0
fca_hlcoef X*0+(1-X)*0
haensch_tunnel_length X*1+(1-X)*1
hfmob_elfield0 X*221000+(1-X)*221000
hfmob_elvsat X*191000+(1-X)*191000
hfmob_elvsattemp X*0+(1-X)*0
hfmob_hlfield0 X*221000+(1-X)*221000
AlGaN (Wurtzite)
The default material parameters for AlGaN Wurtzite are stored in AlGaN_wz.mat.
DEv_DEg_REF 0.3
Eg wz_Eg
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR X*8.292+(1-X)*7.31
HLAFF_REF 5.494
Interpolation_Scheme AxB1_xC
X 0
Y 0
arora_eldopexp1 X*1.16+(1-X)*0.66
arora_eldopexp2 X*0.86+(1-X)*0.81
arora_elmudop X*0.0298+(1-X)*0.0295
arora_elmudopexp X*-1.82+(1-X)*-1.02
arora_elnref X*1e+23+(1-X)*1e+23
arora_elnrefexp X*3.78+(1-X)*3.02
arora_hldopexp1 X*0+(1-X)*0
arora_hldopexp2 X*0+(1-X)*0
arora_hlmudop X*0+(1-X)*0
arora_hlmudopexp X*0+(1-X)*0
arora_hlnref X*0+(1-X)*0
arora_hlnrefexp X*0+(1-X)*0
bg_absorption X*0+(1-X)*0
AlInGaN (Wurtzite)
The default material parameters for AlInGaN Wurtzite are stored in AlInGaN_wz.mat.
DEv_DEg_REF 0.3
Eg wz_Eg
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR X*8.292+Y*6.243+(1-X-Y)*7.31
HLAFF_REF 5.494
Interpolation_Scheme AxByC1_x_yD
X 0
Y 0
arora_eldopexp1 X*1.16+Y*0.68+(1-X-Y)*0.66
arora_eldopexp2 X*0.86+Y*-0.94+(1-X-Y)*0.81
arora_elmudop X*0.0298+Y*0.0774+(1-X-Y)*0.0295
arora_elmudopexp X*-1.82+Y*-6.39+(1-X-Y)*-1.02
AlN
The default material parameters for AlN are stored in AlN.mat.
DEv_DEg_REF 0.3
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
DEv_DEg_REF 0.3
Eg wz_Eg
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 8.292
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 1.16
arora_eldopexp2 0.86
arora_elmudop 0.0298
arora_elmudopexp -1.82
arora_elnref 1.00E+23
arora_elnrefexp 3.78
arora_hldopexp1 0
arora_hldopexp2 0
arora_hlmudop 0
arora_hlmudopexp 0
arora_hlnref 0
arora_hlnrefexp 0
bg_absorption 0
eff_tunnel_length 3
eff_tunnel_priority 0
fca_elcoef 0
fca_hlcoef 0
haensch_tunnel_length 1
hfmob_elfield0 447000
hfmob_elvsat 217000
hfmob_elvsattemp 0
hfmob_hlfield0 447000
AlP
The default material parameters for AlP are stored in AlP.mat.
DEv_DEg_REF 0.6
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 6.054
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 0.8
arora_eldopexp2 0
arora_elmudop 0.001
arora_elmudopexp 0
arora_elnref 4.4E+24
arora_elnrefexp -0.71
arora_hldopexp1 0.85
arora_hldopexp2 0
arora_hlmudop 0.001
arora_hlmudopexp 0
arora_hlnref 1E+24
arora_hlnrefexp -3
bg_absorption 0
AlSb
The default material parameters for AlSb are stored in AlSb.mat.
DEv_DEg_REF (HLAFF_LINEAR-HLAFF_REF)/(Eg-Eg_REF)
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 3.6 + Eg
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
GaAs
The default material parameters for GaAs are stored in GaAs.mat.
DEv_DEg_REF 0.33
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 5.494
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 0.394
arora_eldopexp2 0
arora_elmudop 0.05
arora_elmudopexp 0
arora_elnref 6E+22
arora_elnrefexp -3
arora_hldopexp1 0.38
arora_hldopexp2 0
arora_hlmudop 0.002
arora_hlmudopexp 0
arora_hlnref 1.48E+23
arora_hlnrefexp -3
bg_absorption 0
eff_tunnel_length 3
eff_tunnel_priority 0
fca_elcoef 2E-18
fca_hlcoef 1.3E-17
haensch_tunnel_length 1
hfmob_elfield0 400000
hfmob_elvsat 72000
GaInAsP
The default material parameters for GaInAsP are stored in GaInAsP.mat.
DEv_DEg_REF 0.47
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
1.35+0.668*X-1.068*Y+0.758*X^2+0.078*Y^2-0.069*X*Y-
EgG_BOWING 0.322*X^2*Y+0.03*X*Y^2
EgG_LINEAR X*Y*1.424+(1-X)*(1-Y)*1.344+(1-X)*Y*0.354+X*(1-Y)*2.78
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR X*Y*5.494+(1-X)*(1-Y)*5.684+(1-X)*Y*5.224+X*(1-Y)*6.054
HLAFF_REF 5.494
Interpolation_Scheme AxB1_xCyD1_y
X 0
Y 0
arora_eldopexp1 X*Y*0.394+X*(1-Y)*0.8+(1-X)*Y*0.32+(1-X)*(1-Y)*0.42
arora_eldopexp2 0
arora_elmudop X*Y*500e-4+X*(1-Y)*10e-4+(1-X)*Y*0.1+(1-X)*(1-Y)*400e-4
arora_elmudopexp 0
GaInAsSb
The default material parameters for AlInGaN Wurtzite are stored in AlInGaN_wz.mat.
DEv_DEg_REF 0.35
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
(EgG_X+EgG_Y-0.6*XX*(1-XX)*YY*(1-YY))/(XX*(1-
EgG_BOWING XX)+YY*(1-YY))
EgG_GaAsSb YY*1.424+(1-YY)*0.726-1.43*YY*(1-YY)
EgG_GaInAs XX*1.424+(1-XX)*0.354-0.477*XX*(1-XX)
EgG_GaInSb XX*0.726+(1-XX)*0.1737-0.415*XX*(1-XX)
EgG_INTERP X*Y*1.424+(1-X)*(1-Y)*0.1737+(1-X)*Y*0.354+X*(1-Y)*0.726
EgG_InAsSb YY*0.354+(1-YY)*0.1737-0.67*YY*(1-YY)
EgG_X XX*(1-XX)*((1-YY)*EgG_GaInSb+YY*EgG_GaInAs)
EgG_Y YY*(1-YY)*(XX*EgG_GaAsSb+(1-XX)*EgG_InAsSb)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_INTERP X*Y*5.494+X*(1-Y)*4.786+(1-X)*Y*5.224+(1-X)*(1-Y)*4.7637
HLAFF_REF 5.494
Interpolation_Scheme AxB1_xCyD1_y
X 0
XX min(1-1.e-8,max(1.e-8,X))
GaN
The default material parameters for GaN are stored in GaN.mat.
DEv_DEg_REF 0.3
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 7.334
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 0.66
GaN (Wurtzite)
The default material parameters for GaN Wurtzite are stored in GaN_wz.mat.
DEv_DEg_REF 0.3
GaP
The default material parameters for GaP are stored in GaP.mat.
DEv_DEg_REF 0.6
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 6.054
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 0.8
arora_eldopexp2 0
arora_elmudop 0.001
arora_elmudopexp 0
arora_elnref 4.4E+24
arora_elnrefexp -0.71
arora_hldopexp1 0.85
arora_hldopexp2 0
arora_hlmudop 0.001
arora_hlmudopexp 0
arora_hlnref 1E+24
arora_hlnrefexp -3
bg_absorption 0
eff_tunnel_length 3
eff_tunnel_priority 0
fca_elcoef 2E-18
fca_hlcoef 1.3E-17
haensch_tunnel_length 1
hfmob_elfield0 400000
GaSb
The default material parameters for GaSb are stored in GaSb.mat.
DEv_DEg_REF (HLAFF_INTERP-HLAFF_REF)/(Eg-Eg_REF)
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 4.06 + Eg
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 0.5
arora_eldopexp2 0
arora_elmudop 0.01
arora_elmudopexp 0
arora_elnref 1.00E+23
arora_elnrefexp 0
InAlGaSb
The default material parameters for InAlGaSb are stored in InAlGaSb.mat.
InAs
The default material parameters for InAs are stored in InAs.mat.
DEv_DEg_REF 0.35
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 5.224
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 0.32
arora_eldopexp2 0
arora_elmudop 0.1
arora_elmudopexp 0
arora_elnref 1.1E+24
arora_elnrefexp -3
arora_hldopexp1 0.46
arora_hldopexp2 0
arora_hlmudop 0.002
InAsSbP
The default material parameters for InAsSbP are stored in InAsSbP.mat.
DEv_DEg_REF X*0.35+Y*0.58+(1-X-Y)*0.6
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_BOWING -0.58*X*Y-0.101*X*(1-X-Y)-1.2*Y*(1-X-Y)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
InGaAs
The default material parameters for InGaAs are stored in InGaAs.mat.
DEv_DEg_REF 0.35
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
EgG_BOWING 0.324+0.7*(1.0-X)+0.4*(1.0-X)^2
EgG_LINEAR X*0.354+(1-X)*1.424
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR X*5.224+(1-X)*5.494
HLAFF_REF 5.494
Interpolation_Scheme AxB1_xC
X 0
Y 0
arora_eldopexp1 X*0.32+(1-X)*0.394
arora_eldopexp2 0
arora_elmudop X*0.1+(1-X)*0.05
arora_elmudopexp 0
arora_elnref X*11e23+(1-X)*0.6e23
arora_elnrefexp -3
arora_hldopexp1 X*0.46+(1-X)*0.38
arora_hldopexp2 0
arora_hlmudop 0.002
arora_hlmudopexp 0
arora_hlnref X*1.1e23+(1-X)*1.48e23
arora_hlnrefexp -3
bg_absorption 0
InGaN
The default material parameters for InGaN are stored in InGaN.mat.
DEv_DEg_REF 0.3
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR X*7.074+(1-X)*7.334
HLAFF_REF 5.494
Interpolation_Scheme AxB1_xC
X 0
Y 0
InGaN (Wurtzite)
The default material parameters for InGaN Wurtzite are stored in InGaN_wz.mat.
InGaNAs
The default material parameters for InGaNAs are stored in InGaNAs.mat.
DEv_DEg_REF 0.3
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_BOW -69*(StrainXY-StrainX0)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR X*Y*7.074+X*(1-Y)*5.224+(1-X)*Y*7.334+(1-X)*(1-Y)*5.494
HLAFF_REF X*Y*5.494+X*(1-Y)*5.494+(1-X)*Y*5.494+(1-X)*(1-Y)*5.494
Interpolation_Scheme AxB1_xCyD1_y
Mc_BOW -18.1667/10*(StrainXY-StrainX0)
StrainX0 5.6533/(X*6.0583+(1-X)*5.6533)-1
StrainXY 5.6533/kpmat_LATT-1
X 0
Y 0
arora_eldopexp1 X*Y*0.66+X*(1-Y)*0.32+(1-X)*Y*0.66+(1-X)*(1-Y)*0.394
arora_eldopexp2 X*Y*0.81+X*(1-Y)*0+(1-X)*Y*0.81+(1-X)*(1-Y)*0
arora_elmudop X*Y*0.0295+X*(1-Y)*0.1+(1-X)*Y*0.0295+(1-X)*(1-Y)*0.05
arora_elmudopexp X*Y*-1.02+X*(1-Y)*0+(1-X)*Y*-1.02+(1-X)*(1-Y)*0
arora_elnref X*Y*1e+23+X*(1-Y)*1.10e+24+(1-X)*Y*1e+23+(1-X)*(1-
Y)*6.00e+22
arora_elnrefexp X*Y*3.02+X*(1-Y)*-3+(1-X)*Y*3.02+(1-X)*(1-Y)*-3
arora_hldopexp1 X*Y*0+X*(1-Y)*0.46+(1-X)*Y*0+(1-X)*(1-Y)*0.38
arora_hldopexp2 X*Y*0+X*(1-Y)*0+(1-X)*Y*0+(1-X)*(1-Y)*0
arora_hlmudop X*Y*0+X*(1-Y)*0.002+(1-X)*Y*0+(1-X)*(1-Y)*0.002
arora_hlmudopexp X*Y*0+X*(1-Y)*0+(1-X)*Y*0+(1-X)*(1-Y)*0
arora_hlnref X*Y*0+X*(1-Y)*1.10e+23+(1-X)*Y*0+(1-X)*(1-Y)*1.48e+23
arora_hlnrefexp X*Y*0+X*(1-Y)*-3+(1-X)*Y*0+(1-X)*(1-Y)*-3
bg_absorption X*Y*0+X*(1-Y)*0+(1-X)*Y*0+(1-X)*(1-Y)*0
InN
The default material parameters for InN are stored in InN.mat.
DEv_DEg_REF 0.3
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 7.074
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 0.66
arora_eldopexp2 0.81
arora_elmudop 0.0295
arora_elmudopexp -1.02
arora_elnref 1.00E+23
arora_elnrefexp 3.02
arora_hldopexp1 0
arora_hldopexp2 0
arora_hlmudop 0
arora_hlmudopexp 0
arora_hlnref 0
arora_hlnrefexp 0
bg_absorption 0
eff_tunnel_length 3
eff_tunnel_priority 0
fca_elcoef 0
fca_hlcoef 0
haensch_tunnel_length 1
hfmob_elfield0 221000
InN (Wurtzite)
The default material parameters for InN Wurtzite are stored in InN_wz.mat.
DEv_DEg_REF 0.3
Eg wz_Eg
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 6.243
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 0.68
arora_eldopexp2 -0.94
arora_elmudop 0.0774
arora_elmudopexp -6.39
arora_elnref 1.00E+23
arora_elnrefexp 8.05
arora_hldopexp1 0
arora_hldopexp2 0
arora_hlmudop 0
arora_hlmudopexp 0
InP
The default material parameters for InP are stored in InP.mat.
DEv_DEg_REF 0.6
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 5.684
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 0.42
DEv_DEg_REF (HLAFF_INTERP-HLAFF_REF)/(Eg-Eg_REF)
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 4.59 + Eg
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 0.32
arora_eldopexp2 0
arora_elmudop 0.1
arora_elmudopexp 0
arora_elnref 1.10E+24
arora_elnrefexp -3
arora_hldopexp1 0.46
arora_hldopexp2 0
arora_hlmudop 0.002
arora_hlmudopexp 0
arora_hlnref 1.10E+23
arora_hlnrefexp -3
bg_absorption 0
eff_tunnel_length 3
eff_tunnel_priority 0
fca_elcoef 2.00E-18
fca_hlcoef 1.30E-17
haensch_tunnel_length 1
hfmob_elfield0 400000
hfmob_elvsat 72000
hfmob_elvsattemp 0.44
hfmob_hlfield0 400000
hfmob_hlvsat 90000
hfmob_hlvsattemp 0.59
Oxide
The default material parameters for Oxide are stored in Oxide.mat.
DEv_DEg_REF 0.33
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 6
HLAFF_REF 5.494
Interpolation_Scheme Oxide
X 0
Y 0
arora_eldopexp1 0
arora_eldopexp2 0
arora_elmudop 1E-10
arora_elmudopexp 0
arora_elnref 1
arora_elnrefexp 0
arora_hldopexp1 0
arora_hldopexp2 0
Polysilicon
The default material parameters for Polysilicon are stored in Polysilicon.mat.
DEv_DEg_REF 0.5
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
Si
The default material parameters for Silicon are stored in Si.mat.
DEv_DEg_REF 0.5
Eg min(kpmat_G6C_G8V,kpmat_X6C_G8V)
Eg_REF 1.424
HLAFF_DISCONT HLAFF_REF+DEv_DEg_REF*(Eg-Eg_REF)
HLAFF_LINEAR 5.13
HLAFF_REF 5.494
Interpolation_Scheme AB
X 0
Y 0
arora_eldopexp1 0.72
arora_eldopexp2 0.065
arora_elmudop 0.008
arora_elmudopexp -0.45
arora_elnref 1.12E+23
arora_elnrefexp 3.2
arora_hldopexp1 0.72
arora_hldopexp2 0.065
arora_hlmudop 0.0045
arora_hlmudopexp -0.45
arora_hlnref 2.23E+23
arora_hlnrefexp 3.2
References
[1] O. Madelung, "Semiconductors – Basic Data", 2nd Ed., Springer-Verlag, Berlin, 1996.
[2] J. Piprek: Semiconductor Optoelectronic Devices (Academic Press 2003).
[3] S.L. Chuang, “Optical Gain of Strained Wurtzite GaN Quantum-Well Lasers,” IEEE JQE, Vol. 32, No. 10, OCT.
1996 p.1791.
B
Index Barr/SCH: Set Material 82, 139
Beam Propagation Method 154
bias 1 98, 160
bias 2 98, 107, 160
bias 3 107
boldface Courier 4
Bulk Active 46
Bulk Insulator 46
Bulk Region 78, 134
Bulk Semiconductor 46
# Bulk Taper 46
# Long./Azym. Modes 169
# of X pts 88, 90, 91, 100, 150, 153, 163 C
# of Y pts 90, 100, 104, 150, 153, 163
Calculate Gain 46, 92, 113, 119, 155
# Points 93, 115
Calculate Mode 46, 91, 153, 154
# Tran./Radial Modes 169
Cancel 77, 133
# Transverse 169
Cascade 45
cauchy 127
1 Charge Carriers 101, 164, 174
clear run file 74, 123, 172, 295
15 244
Close 43, 45
150+Phase/360 230
Close All 43, 44, 45
composition 82, 139
2 Copy (Ctrl-C) 43
Copy Selection 45
2 244
Cs 111
2D Simulation 133
Current 107
Current[0] 105, 108, 173
3 Cut (Ctrl-X) 43
300+Phase/360 218 Cut Selection 45
5 D
HALT 107
O
Help 49, 57, 58, 60, 61, 62
OK 7, 77, 133
I Online Help 45
Open 43
Import 43 Open Circuit 45
In 44 Operation 72
Index Profile 90, 150 Optical Grating 46
InGaAs 82, 139 Out 44
Oxide 143
K Oxide Region 135
kpmat_G6C_G8V 122
P
L Parasitics 44, 111
Paste (Ctrl-V) 43
LaserFrequency 105 Paste Clipboard Contents 45
Q T
Quantum Well 46 Tile 44
Quantum Well Data 106 Tile Regions 44, 46, 85, 145
Quantum-Well Region 78, 134 Time 108
Qwell: Phys. Data 120 Time Dependent 107
Qwell: Set Material 82, 139 tmp 87, 148
Trap dens 52
R
U
Recalculate KP 69, 123, 161, 295
Recalculate Mode 123, 153, 161, 172, 294 Undo (Ctrl-Z) 43
Redraw 44, 85 Undo Last Change 45
Redraw Circuit 45 Uniform 50, 170, 172
reg_regtype 49 Uniform Mesh 73
Region(s) 164 Use Default 50
regmat_Augn300 125 Use Defaults 62, 87, 149, 150
regmat_Augp600 125 Utility 111
regmat_krelaxener 120
regmat_SRH_taun 125 V
regmat_SRH_taup 125
Reports 106 View 7, 44, 45, 85, 87, 88, 93, 114, 145, 147, 148, 155
Rs 111 View Bias 74
RUN 107 View Contours 165, 169, 171, 174
Run Log 106 View Editor 104, 173
Run Prefix 119 View Full 45
Run Simulation 6 View Graphs 151
View Plot 104, 173
S
W
Save 43, 86, 100, 147, 163
Save As 43, 86, 147 Waveguide Loss 124
Save Circuit 45 Well Thickness 82, 139
Save Structure 86, 147 Width 79, 80, 81, 82, 83, 84
Scan Variable 44 Window 173
SCH Thickness 82, 139
Select All 43 X
Select Mode 46, 47, 135
Self-Heating 129 X Axis Parameter 105, 173
Set Custom 105, 130, 173 X Ref 49, 80, 81, 82, 83, 84, 137, 138, 139, 140, 141,
Set Grid 73, 74, 100, 104, 130, 163, 295 142
Set Material 49, 51, 81, 83, 138, 140, 141, 143 Xcenter 79, 80, 81, 82, 83, 84
Show 3D Contour Plot option 88
Show Index Change 93, 115, 155 Y
Show L-I-V 7
Show Material PL 93, 114, 155 Y Axis Parameter 105, 173
Show Peak Gain 93, 115, 155 Y Ref 49, 80, 137
Show Structure 133
Simulate Laser 44, 46, 99, 108, 123, 161