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DATA SHEET
TDA2616/TDA2616Q
2 x 12 W hi-fi audio power
amplifiers with mute
Product specification July 1994
File under Integrated Circuits, IC01
Philips Semiconductors Product specification
ORDERING INFORMATION
Notes
1. SOT131-2; 1996 August 27.
2. SOT157-2; 1996 August 27.
July 1994 2
Philips Semiconductors Product specification
+ VP
V ref1 TDA2616
20 kΩ
680 Ω
VB CM
1
INV1
20 kΩ 4
OUT1
2 4 kΩ
MUTE
– VP
5 kΩ
+ VP
V ref3
10 kΩ
+ VP
+ V ref2
Vref1 THERMAL
3 PROTECTION
1/2 V P / GND
voltage
comparator
VA V B
10 kΩ
– V ref2
– VP – VP
20 kΩ 6
OUT2
9 CM
INV2
8 680 Ω VB
INV1, 2 20 kΩ
V ref1
VA
5
MCD375 - 1
– VP
July 1994 3
Philips Semiconductors Product specification
SYMBOL PIN DESCRIPTION The TDA2616 is a hi-fi stereo amplifier designed for mains
fed applications, such as stereo radio and TV. The circuit
−INV1 1 non-inverting input 1
is optimally designed for symmetrical power supplies, but
MUTE 2 mute input is also well-suited to asymmetrical power supply systems.
1/2VP/GND 3 1/2 supply voltage or ground
An output power of 2 × 12 W (THD = 0.5%) can be
OUT1 4 output 1 delivered into an 8 Ω load with a symmetrical power supply
−VP 5 supply voltage (negative) of ±16 V. The gain is internally fixed at 30 dB, thus offering
OUT2 6 output 2 a low gain spread and a very good gain balance between
the two amplifiers (0.2 dB).
+VP 7 supply voltage (positive)
INV1, 2 8 inverting inputs 1 and 2 A special feature is the input mute circuit. This circuit
disconnects the non-inverting inputs when the supply
−INV2 9 non-inverting input 2
voltage drops below ±6 V, while the amplifier still retains its
DC operating adjustment. The circuit features suppression
of unwanted signals at the inputs, during switch-on and
handbook, halfpage switch-off.
INV1 1
The mute circuit can also be activated via pin 2. When a
MUTE 2
current of 300 µA is present at pin 2, the circuit is in the
1/2 VP / GND 3 mute condition.
OUT1 4 The device is provided with two thermal protection circuits.
VP
One circuit measures the average temperature of the
5 TDA2616
crystal and the other measures the momentary
OUT2 6 temperature of the power transistors. These control
+ VP 7
circuits attack at temperatures in excess of +150 °C, so a
crystal operating temperature of max. +150 °C can be
INV1, 2 8 used without extra distortion.
INV2 9
With the derating value of 2.5 K/W, the heatsink can be
MCD372 - 1 calculated as follows:
at RL = 8 Ω and VP = ±16 V, the measured maximum
Fig.2 Pin configuration. dissipation is 14.6 W.
With a maximum ambient temperature of +65 °C, the
thermal resistance of the heatsink is:
150 – 65
R th = ---------------------- – 2.5 = 3.3 K/W.
14.6
July 1994 4
Philips Semiconductors Product specification
LIMITING VALUES
In accordance with the Absolute maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
±VP supply voltage − 21 V
IOSM non-repetitive peak output current − 4 A
Ptot total power dissipation see Fig.3 − 25 W
Tstg storage temperature range −55 +150 °C
TXTAL crystal temperature − +150 °C
Tamb ambient operating temperature range −25 150 °C
tsc short circuit time short-circuit to ground; note 1 − 1 h
MCD376 - 2
32
handbook, halfpage
Ptot
(W)
24
infinite
heatsink
16
R th-hs= 3.3 K/W
0
– 25 0 50 100 150
Tamb ( o C)
THERMAL RESISTANCE
July 1994 5
Philips Semiconductors Product specification
CHARACTERISTICS
July 1994 6
Philips Semiconductors Product specification
July 1994 7
Philips Semiconductors Product specification
mute input + VP
handbook, full pagewidth
2200 µF
2 7
680 Ω 20 kΩ
220 nF 4
VI 1
22 nF
20 kΩ
3 TDA2616 8.2 Ω
R L= 8 Ω
20 kΩ
220 nF 100 nF
VI 9
6
22 nF
8 680 Ω 20 kΩ
8.2 Ω
R L= 8 Ω
– VP
MCD374 - 3
2200 µF
July 1994 8
Philips Semiconductors Product specification
VP RS
mute input VS
handbook, full pagewidth
100 nF 2200 µF
2 7
680 Ω 20 kΩ
220 nF 4
1
VI
22 nF
680 µF
20 kΩ
3 8.2 Ω
R L= 8 Ω
internal
100 µF 1/2 VP TDA2616
20 kΩ
220 nF
9
VI
6
22 nF
680 µF
8 680 Ω 20 kΩ
8.2 Ω
R L= 8 Ω
5
MCD373 - 2
July 1994 9
Philips Semiconductors Product specification
PACKAGE OUTLINES
non-concave
Dh
x
Eh
d A2
B
seating plane
j E
A1
c
1 9
Z e w M Q
bp
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
92-11-17
SOT131-2
95-03-11
July 1994 10
Philips Semiconductors Product specification
DBS9P: plastic DIL-bent-SIL power package; 9 leads (lead length 12 mm) SOT157-2
non-concave
Dh
x
D
Eh
d A2
j E
L3
L Q
1 9
Z e1 w M m e2 v M
bp
e
0 5 10 mm
scale
17.0 4.6 0.75 0.48 24.0 20.0 12.2 6 3.4 12.4 2.4 2.1 2.00
mm 10 5.08 2.54 5.08 4.3 0.8 0.25 0.03
15.5 4.2 0.60 0.38 23.6 19.6 11.8 3.1 11.0 1.6 1.8 1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
92-10-12
SOT157-2
95-03-11
July 1994 11
Philips Semiconductors Product specification
DEFINITIONS
July 1994 12
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