Persuasive Reports

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http://www.chineseowl.idv.tw


A.
B.
C.
D.
E.
D.

(i)

As anticipated, the proposed method with calculations of the
mean and standard deviation of ordered categorical
responses can accurately estimate the location and
dispersion effects. In addition, it can be easily implemented
and clearly separates the location effect from the dispersion
effect. The dual response surface methodology can be used
to obtain an optimal combination of process parameters and
help engineers set the controlled factors, and alleviate the
quality problem related to ordered categorical data. To do
so, the PCIs of OCT and DT are defined and, then, the
UMVU (uniformly minimum variance) estimators of the
studied PCIs are derived under the assumption of a normal
distribution. Next, the above estimators are used to
construct the one-to-one relationship between the PCIs and
the conforming rate of DT (or OCT). Finally, a hypothesis
testing procedure for PCIs is developed.
(ii)

As anticipated, this hypothesis testing procedure allows firms to assess
the performance indices of the operation cycle time (OCT) and delivery
time (DT) of VLSI, increasing the competitiveness of suppliers. Based on
these performance indices, the corresponding tables of the excess time
limit rate of OCT are also provided for manufacturing VLSI and DT,
based on a supplier's schedule. These tables confirm the required
performance index (PCI) value for manufacturers. Moreover, the
hypothesis testing procedure for performance index is adopted to assess
whether the OCT and DT satisfies the firm's requirements. Importantly,
this work can provide a procedure for testing PCIs of OCT (DT) and a
corresponding table of PCIs versus conforming rates of DT and OCT for
suppliers. In addition to investigating the operational cycle time (OCT) of
an individual manufacturing step for VLSI, the testing procedure can be
used to assess the delivery time to satisfy customer requirements.
E.

(i)

We seek your expedient approval to implement
this novel procedure in your daily administrative
operations in order to increase work productivity.
(ii)

We therefore highly recommend that your quality
assurance department adopt this performance index (PCI)
and objective hypothesis testing procedure to accelerate
product testing during VLSI manufacturing, ultimately
increasing customer satisfaction owing to accelerated
product delivery.

(1/3)
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As is well known, ionizing irradiation incurs material damage. The
range/number of radiation effects in solids depends on both crystal
structure and the type of ionizing irradiation. Additionally, the energy
and dosage of irradiation essentially affect radiation processes. Ionizing
irradiation excites both electronic and ionic subsystems of crystals.
Relaxation processes occur after excitation, forming defects. Defects
impair the solids, extensively stimulating material damage. However,
the radiation-stimulated ordering effect (RSOE) is found in various
materials. At least two competitive processes are observed in crystals
and semiconductors under ionizing irradiation - 1) generation of
radiation defects and 2) radiation-stimulated annihilation of defects. On
a specific stage, the annihilation of irradiation defects can dominate the
generation of defects, enhancing the structure. This stage is referred to
as RSOE. Therefore, low-dose irradiation could serve as an effective
method for increasing the reliability of semiconductors and the stability
of parameters in the final stage of manufacturing. This fact substantially
increases economical efficiency.
(2/3)
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Nevertheless, the RSOE mechanisms in II-VI semiconductors remain
unknown, making it impossible to implement process applications
capable of increasing the efficiency of barrier structures. Although the
application of RSOE could markedly increase product output in
microelectronics, the generalization and analysis of RSOE remain an
obstacle to further development.
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Therefore, we have investigated the RSOE mechanism in II-VI
semiconductors and constructed a related model. To do so, voltage-
current characteristics (VIC), voltage-capacity characteristics (VCC)
and capacity-modulated spectra for barrier structures are determined at
various irradiation doses, providing the preliminary experimental data.
Based on that data, the control parameters are then derived. Following
Hall experiments to consider bulk effects, the parametric changes are
analyzed and synthesized.
(3/3)
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Low-dose radiation processes can be clarified in solids, improving the
parameters of structures based on II-VI semiconductors. The proposed work
can also elucidate low-dose radiation processes in II-VI semiconductors.. Thus,
applying this model to barrier structure manufacturing allows us to predict
accurately the irradiation conditions to enhance the parameters of structures
based on II-VI semiconductors. Importantly, the range of objects in which the
RSOE is observed can be expanded. II-VI and other (Si, III-V) semiconductors
can also be compared in terms of the RSOE mechanisms. Analysis of RSOE in
II-VI reveals the peculiarities of related objects. In contrast to III-V
semiconductors, for which the properties of pure crystals are determined by
impurities in II-VI semiconductors, the lattice stoichiometric defects prevails.
Naturally, RSOE can be explained by the reconstruction of defect centers.
Importantly, the proposed model considers the effect of the radiation-stimulated
diffusion (RSD) of point defects.
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We therefore seek your authorization to continue with our investigations of
RSOE mechanisms in II-VI semiconductors, ultimately contributing to the
economic competitiveness of our countrys semiconductor manufacturing
sector.
Further details can be found at
www.chineseowl.idv.tw