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kT T
naponski ekvivalent temperature UT ==& V
q 11609
T
energetski ekvivalent temperature ET = kT =& eV
11609
Svojstva poluvodiča:
4,73 ⋅ 10 −4 ⋅ T 2
širina zabranjenog pojasa EG = 1,17 − ,eV za 0<T<800 K
T + 636
3/ 2
⎛ T ⎞ ⎛ 6965,4 ⎞ -3
intrinsična koncntracija: ni = 1,77 ⋅10 ⋅ ⎜
20
⎟ ⋅ exp⎜ − ⎟ , cm
⎝ 300 ⎠ ⎝ T ⎠
⎛ E − EF ⎞
koncentracija slobodnih nosioca: n = N C ⋅ exp⎜ − G ⎟
⎝ kT ⎠
⎛ E ⎞
p = NV ⋅ exp⎜ − F ⎟
⎝ kT ⎠
dn( x) dp ( x)
gustoća difuzijske struje: J n = q ⋅ Dn ⋅ J p = −q ⋅ D p ⋅
dx dx
difuzijska konstanta: D = µ ⋅ U T (Einsteinova relacija)
P-N spoj
n0 n ⋅ p0 p
kontaktni potencijal: U K = U T ⋅ ln
ni2
U U
Boltzmannove relacije: pn 0 = p0 n ⋅ exp n p 0 = n0 p ⋅ exp
UT UT
2ε 0 ⋅ ε ′ ⎛ 1 1 ⎞
širina osiromašenog područja: dB = ⎜⎜ + ⎟ ⋅ (U K − U )
q ⎝ N D N A ⎟⎠
⎡ ⎛U ⎞ ⎤
Shockleyeva jednadžba: I = I S ⋅ ⎢exp⎜⎜ ⎟⎟ − 1⎥
⎣ ⎝ UT ⎠ ⎦
reverzna struja zasićenja:
⎛ n0 p p ⎞
dioda s dugačkim stranama I S = I Sn + I Sp = q ⋅ S ⎜ Dn + D p 0n ⎟
⎜ Ln L p ⎟⎠
⎝
⎛ n0 p p ⎞
dioda s kratkim stranama I S = I Sn + I Sp = q ⋅ S ⎜ Dn + Dp 0n ⎟
⎜ wp wn ⎟⎠
⎝
difuzijska duljina: L = D ⋅τ
dU UT
dinamički otpor: rd = =
dI I + IS
S
kapacitet osiromašenog područja: C j = ε0 ⋅ε ′
dB
difuzijska admitancija Y (ω ) =
I
1 + jωτ
UT
⎡ ⎛U ⎞ ⎤
sunčana ćelija: I = I L − I S ⋅ ⎢exp⎜⎜ ⎟⎟ − 1⎥
⎣ ⎝ UT ⎠ ⎦
Bipolarni tranzistor
normalno aktivno područje:
npn pnp
I E = − I nE − I pE I E = I pE + I nE
I c = I nC + I CB 0 I CB 0 > 0 I c = − I pC − I CB 0 I CB 0 > 0
I B = I pE + I R − I CBO I B = − I nE − I R + I CBO
I R = I nE − I nC I R = I pE − I pC
I nE I nC I pE I pC
γ= β* = γ= β* =
− IE I nE IE I pE
α
α = γ ⋅β* β=
1−α
I C = −α ⋅ I E + I CB 0 I C = β ⋅ I B + I CE 0 I CE 0 = (1 + β ) ⋅ I CB 0
Ebers-Mollove jednadžbe:
⎡ ⎛ − U EB ⎞ ⎤ ⎡ ⎛ − U CB ⎞ ⎤
npn tranzistor: I E = − I ES ⋅ ⎢exp⎜⎜ ⎟⎟ − 1⎥ + α R ⋅ I CS ⋅ ⎢exp⎜⎜ ⎟⎟ − 1⎥
⎣ ⎝ U T ⎠ ⎦ ⎣ ⎝ U T ⎠ ⎦
⎡ ⎛ − U EB ⎞ ⎤ ⎡ ⎛ − U CB ⎞ ⎤
I C = α ⋅ I ES ⋅ ⎢exp⎜⎜ ⎟⎟ − 1⎥ − I CS ⋅ ⎢exp⎜⎜ ⎟⎟ − 1⎥
⎣ ⎝ U T ⎠ ⎦ ⎣ ⎝ U T ⎠ ⎦
⎡ ⎛U ⎞ ⎤
ili I E = −α R ⋅ I C − I EB 0 ⋅ ⎢exp⎜⎜ BE ⎟⎟ − 1⎥
⎢⎣ ⎝ U T ⎠ ⎥⎦
⎡ ⎛U ⎞ ⎤
I C = −α ⋅ I E − I CB 0 ⋅ ⎢exp⎜⎜ BC ⎟⎟ − 1⎥
⎣ ⎝ UT ⎠ ⎦
I EB 0 = I ES ⋅ (1 − α ⋅ α R ) I CB 0 = I CS ⋅ (1 − α ⋅ α R ) α ⋅ I ES = α R ⋅ I CS
− U BE − U BC
za pnp tranzistor: exp , exp i I ES , I CS , I EB 0 , I CB 0 < 0
UT UT
Linearno područje:
⎡ ⎛ U −U ⎞
1/ 2
⎤
I D = G0 ⎢1 − ⎜⎜ K GS
⎟⎟ ⎥ ⋅ U DS
⎢⎣ ⎝ U K − U GS 0 ⎠ ⎥⎦
Triodno područje:
U − U GS 0 ⎧⎪ U DS ⎡⎛ U − U + U ⎞
3/ 2
⎛ U − U GS ⎞
3/ 2
⎤ ⎫⎪
I D = G0 K ⎨ 3 − 2 ⎢⎜⎜ K GS DS
⎟⎟ − ⎜⎜ K ⎟⎟ ⎥⎬
3 ⎪⎩ KU − U GS 0 ⎢⎣⎝ U K − U GS 0 ⎠ ⎝ U K − U GS 0 ⎠ ⎥⎦ ⎪⎭
Područje zasićenja:
U K − U GS 0 ⎡ ⎛ U K − U GS ⎞ ⎤
3/ 2
U K − U GS
I D = G0 ⎢1 − 3 ⋅ + 2 ⋅ ⎜⎜ ⎟⎟ ⎥
3 ⎢⎣ U K − U GS 0 ⎝ U K − U GS 0 ⎠ ⎥⎦
dinamički parametri:
∆i D
strmina: gm = u DS = konst.
∆uGS
Triodno područje: Područje zasićenja:
⎡⎛ U − U + U ⎞
1/ 2
⎛ U − U GS ⎞
1/ 2
⎤ ⎡ ⎛ U − U ⎞1 / 2 ⎤
g m = G0 ⋅ ⎢⎜⎜ K GS DS
⎟⎟ − ⎜⎜ K ⎟⎟ ⎥ g m = G0 ⋅ ⎢1 − ⎜⎜ K GS
⎟⎟ ⎥
⎢⎣⎝ U K − U GS 0 ⎠ ⎝ U K − U GS 0 ⎠ ⎥⎦ ⎢⎣ ⎝ K U − U GS 0 ⎠ ⎥⎦
1 ∆iD
izlazna dinamička vodljivost: gd = = uGS = konst.
rd ∆u DS
⎡ ⎛U −U +U ⎞
1/ 2
⎤
g d = G0 ⋅ ⎢1 − ⎜⎜ K GS DS
⎟⎟ ⎥
⎢⎣ ⎝ U K − U GS 0 ⎠ ⎥⎦
∆u DS
faktor naponskog pojačanja: µ = − i D = konst. Barkhausenova relacija: µ = g m ⋅ rd
∆u GS
MOSFET:
⎛ U ⎞
I D = K ⋅ ⎜⎜U GS − U GS 0 − DS ⎟⎟ ⋅ U DS triodno područje
⎝ 2 ⎠
I D = ⋅ (U GS − U GS 0 )
K 2
područje zasićenja
2
ε ox W
K =µ
d ox L
dinamički parametri:
Triodno područje:
g m = K ⋅ U DS g d = K ⋅ (U GS − U GS 0 − U DS ) µ = g m ⋅ rd
Područje zasićenja:
g m = K ⋅ (U GS − U GS 0 ) gd = 0 , rd =∝ , µ=∝