TEMP ERATURE SENSORS

7.1
SECTI ON 7
TEMP ERATURE SENSORS
Wa l t Kest er , J a m es Br ya n t , Wa l t J u n g
I NTRODUCTI ON
Measur ement of t emper at ur e is cr it ical in moder n elect r onic devices, especially
expensive lapt op comput er s and ot her por t able devices wit h densely packed cir cuit s
which dissipat e consider able power in t he for m of heat . Knowledge of syst em
t emper at ur e can also be used t o cont r ol bat t er y char ging as well as pr event damage
t o expensive micr opr ocessor s.
Compact high power por t able equipment oft en has fan cooling t o maint ain junct ion
t emper at ur es at pr oper levels. In or der t o conser ve bat t er y life, t he fan should only
oper at e when necessar y. Accur at e cont r ol of t he fan r equir es a knowledge of cr it ical
t emper at ur es fr om t he appr opr iat e t emper at ur e sensor .
n Monitoring
u Portable Equipment
u CPU Temperature
u Battery Temperature
u Ambient Temperature
n Compensation
u Oscillator Drift in Cellular Phones
u Thermocouple Cold-Junction Compensation
n Control
u Battery Charging
u Process Control
APPLICATIONS OF TEMPERATURE SENSORS
Figure 7.1
Accur at e t emper at ur e measur ement s ar e r equir ed in many ot her measur ement
syst ems such as pr ocess cont r ol and inst r ument at ion applicat ions. In most cases,
because of low-level nonlinear out put s, t he sensor out put must be pr oper ly
condit ioned and amplified befor e fur t her pr ocessing can occur .
Except for IC sensor s, all t emper at ur e sensor s have nonlinear t r ansfer funct ions. In
t he past , complex analog condit ioning cir cuit s wer e designed t o cor r ect for t he sensor
nonlinear it y. These cir cuit s oft en r equir ed manual calibr at ion and pr ecision
r esist or s t o achieve t he desir ed accur acy. Today, however , sensor out put s may be
TEMP ERATURE SENSORS
7.2
digit ized dir ect ly by high r esolut ion ADCs. Linear izat ion and calibr at ion is t hen
per for med digit ally, t her eby r educing cost and complexit y.
Resist ance Temper at ur e Devices (RTDs) ar e accur at e, but r equir e excit at ion cur r ent
and ar e gener ally used in br idge cir cuit s. Ther mist or s have t he most sensit ivit y but
ar e t he most non-linear . However , t hey ar e popular in por t able applicat ions such as
measur ement of bat t er y t emper at ur e and ot her cr it ical t emper at ur es in a syst em.
Moder n semiconduct or t emper at ur e sensor s offer high accur acy and high linear it y
over an oper at ing r ange of about 55C t o +150C. Int er nal amplifier s can scale t he
out put t o convenient values, such as 10mV/C. They ar e also useful in cold-junct ion-
compensat ion cir cuit s for wide t emper at ur e r ange t her mocouples. Semiconduct or
t emper at ur e sensor s can be int egr at ed int o mult i-funct ion ICs which per for m a
number of ot her har dwar e monit or ing funct ions.
Figur e 7.2 list s t he most popular t ypes of t emper at ur e t r ansducer s and t heir
char act er ist ics.
TYPES OF TEMPERATURE SENSORS
THERMOCOUPLE RTD THERMISTOR SEMICONDUCTOR
Widest Range:
184C to +2300C
Range:
200C to +850C
Range:
0C to +100C
Range:
55C to +150C
High Accuracy and
Repeatability
Fair Linearity Poor Linearity Linearity: 1C
Accuracy: 1C
Needs Cold Junction
Compensation
Requires
Excitation
Requires
Excitation
Requires Excitation
Low-Voltage Output Low Cost High Sensitivity 10mV/K, 20mV/K,
or 1A/K Typical
Output
Figure 7.2
THERMOCOUP LE P RI NCI P LES AND COLD-J UNCTI ON
COMP ENSATI ON
Ther mocouples ar e small, r ugged, r elat ively inexpensive, and oper at e over t he
widest r ange of all t emper at ur e sensor s. They ar e especially useful for making
measur ement s at ext r emely high t emper at ur es (up t o +2300C) in host ile
envir onment s. They pr oduce only millivolt s of out put , however , and r equir e
pr ecision amplificat ion for fur t her pr ocessing. They also r equir e cold-junct ion-
compensat ion (CJ C) t echniques which will be discussed shor t ly. They ar e mor e
linear t han many ot her sensor s, and t heir non-linear it y has been well char act er ized.
Some common t her mocouples ar e shown in Figur e 7.3. The most common met als
used ar e Ir on, Plat inum, Rhodium, Rhenium, Tungst en, Copper , Alumel (composed
TEMP ERATURE SENSORS
7.3
of Nickel and Aluminum), Chr omel (composed of Nickel and Chr omium) and
Const ant an (composed of Copper and Nickel).
COMMON THERMOCOUPLES
JUNCTION MATERIALS
TYPICAL
USEFUL
RANGE (C)
NOMINAL
SENSITIVITY
(V/C)
ANSI
DESIGNATION
Platinum (6%)/ Rhodium-
Platinum (30%)/Rhodium
38 to 1800 7.7 B
Tungsten (5%)/Rhenium -
Tungsten (26%)/Rhenium
0 to 2300 16 C
Chromel - Constantan 0 to 982 76 E
Iron - Constantan 0 to 760 55 J
Chromel - Alumel 184 to 1260 39 K
Platinum (13%)/Rhodium-
Platinum
0 to 1593 11.7 R
Platinum (10%)/Rhodium-
Platinum
0 to 1538 10.4 S
Copper-Constantan 184 to 400 45 T
Figure 7.3
Figur e 7.4 shows t he volt age-t emper at ur e cur ves of t hr ee commonly used
t her mocouples, r efer r ed t o a 0C fixed-t emper at ur e r efer ence junct ion. Of t he
t her mocouples shown, Type J t her mocouples ar e t he most sensit ive, pr oducing t he
lar gest out put volt age for a given t emper at ur e change. On t he ot her hand, Type S
t her mocouples ar e t he least sensit ive. These char act er ist ics ar e ver y impor t ant t o
consider when designing signal condit ioning cir cuit r y in t hat t he t her mocouples'
r elat ively low out put signals r equir e low-noise, low-dr ift , high-gain amplifier s.
To under st and t her mocouple behavior , it is necessar y t o consider t he non-linear it ies
in t heir r esponse t o t emper at ur e differ ences. Figur e 7.4 shows t he r elat ionships
bet ween sensing junct ion t emper at ur e and volt age out put for a number of
t her mocouple t ypes (in all cases, t he r efer ence cold junct ion is maint ained at 0C). It
is evident t hat t he r esponses ar e not quit e linear , but t he nat ur e of t he non-linear it y
is not so obvious.
Figur e 7.5 shows how t he Seebeck coefficient (t he change of out put volt age wit h
change of sensor junct ion t emper at ur e - i.e., t he fir st der ivat ive of out put wit h
r espect t o t emper at ur e) var ies wit h sensor junct ion t emper at ur e (we ar e st ill
consider ing t he case wher e t he r efer ence junct ion is maint ained at 0C).
When select ing a t her mocouple for making measur ement s over a par t icular r ange of
t emper at ur e, we should choose a t her mocouple whose Seebeck coefficient var ies as
lit t le as possible over t hat r ange.
TEMP ERATURE SENSORS
7.4
THERMOCOUPLE OUTPUT VOLTAGES FOR
TYPE J, K, AND S THERMOCOUPLES
-250 0 250 500 750 1000 1250 1500 1750
-10
0
10
20
30
40
50
60
T
H
E
R
M
O
C
O
U
P
L
E

O
U
T
P
U
T

V
O
L
T
A
G
E

(
m
V
)
TEMPERATURE (C)
TYPE J
TYPE K
TYPE S
Figure 7.4
THERMOCOUPLE SEEBECK COEFFICIENT
VERSUS TEMPERATURE
-250 0 250 500 750 1000 1250 1500 1750
0
10
20
30
40
50
60
70
S
E
E
B
E
C
K

C
O
E
F
F
I
C
I
E
N
T

-

V
/

C
TEMPERATURE (C)
TYPE J
TYPE K
TYPE S
Figure 7.5
TEMP ERATURE SENSORS
7.5
For example, a Type J t her mocouple has a Seebeck coefficient which var ies by less
t han 1V/C bet ween 200 and 500C, which makes it ideal for measur ement s in t his
r ange.
Pr esent ing t hese dat a on t her mocouples ser ves t wo pur poses: Fir st , Figur e 7.4
illust r at es t he r ange and sensit ivit y of t he t hr ee t her mocouple t ypes so t hat t he
syst em designer can, at a glance, det er mine t hat a Type S t her mocouple has t he
widest useful t emper at ur e r ange, but a Type J t her mocouple is mor e sensit ive.
Second, t he Seebeck coefficient s pr ovide a quick guide t o a t her mocouple's linear it y.
Using Figur e 7.5, t he syst em designer can choose a Type K t her mocouple for it s
linear Seebeck coefficient over t he r ange of 400C t o 800C or a Type S over t he
r ange of 900C t o 1700C. The behavior of a t her mocouple's Seebeck coefficient is
impor t ant in applicat ions wher e var iat ions of t emper at ur e r at her t han absolut e
magnit ude ar e impor t ant . These dat a also indicat e what per for mance is r equir ed of
t he associat ed signal condit ioning cir cuit r y.
To use t her mocouples successfully we must under st and t heir basic pr inciples.
Consider t he diagr ams in Figur e 7.6.
THERMOCOUPLE BASICS
T1
Metal A
Metal B
Thermoelectric
EMF
R Metal A Metal A
R = Total Circuit Resistance
I = (V1 V2) / R
V1 T1 V2 T2
V1 V2
Metal B
Metal A Metal A
V1
V1
T1
T1
T2
T2
V2
V2
V
Metal A Metal A
Copper Copper
Metal B Metal B
T3 T4
V = V1 V2, If T3 = T4
A. THERMOELECTRIC VOLTAGE
B. THERMOCOUPLE
C. THERMOCOUPLE MEASUREMENT
D. THERMOCOUPLE MEASUREMENT
I
V1
Figure 7.6
If we join t wo dissimilar met als at any t emper at ur e above absolut e zer o, t her e will
be a pot ent ial differ ence bet ween t hem (t heir "t her moelect r ic e.m.f." or "cont act
pot ent ial") which is a funct ion of t he t emper at ur e of t he junct ion (Figur e 7.6A). If we
join t he t wo wir es at t wo places, t wo junct ions ar e for med (Figur e 7.6B). If t he t wo
junct ions ar e at differ ent t emper at ur es, t her e will be a net e.m.f. in t he cir cuit , and a
cur r ent will flow det er mined by t he e.m.f. and t he t ot al r esist ance in t he cir cuit
(Figur e 7.6B). If we br eak one of t he wir es, t he volt age acr oss t he br eak will be
TEMP ERATURE SENSORS
7.6
equal t o t he net t her moelect r ic e.m.f. of t he cir cuit , and if we measur e t his volt age,
we can use it t o calculat e t he t emper at ur e differ ence bet ween t he t wo junct ions
(Figur e 7.6C). We must always remember that a thermocouple measures the
temperature difference between two junctions, not the absolute temperature at one
junction. We can only measur e t he t emper at ur e at t he measur ing junct ion if we
know t he t emper at ur e of t he ot her junct ion (oft en called t he "r efer ence" junct ion or
t he "cold" junct ion).
But it is not so easy t o measur e t he volt age gener at ed by a t her mocouple. Suppose
t hat we at t ach a volt met er t o t he cir cuit in Figur e 7.6C (Figur e 7.6D). The wir es
at t ached t o t he volt met er will for m fur t her t her mojunct ions wher e t hey ar e
at t ached. If bot h t hese addit ional junct ions ar e at t he same t emper at ur e (it does not
mat t er what t emper at ur e), t hen t he "Law of Int er mediat e Met als" st at es t hat t hey
will make no net cont r ibut ion t o t he t ot al e.m.f. of t he syst em. If t hey ar e at
differ ent t emper at ur es, t hey will int r oduce er r or s. Since every pair of dissimilar
metals in contact generates a thermoelectric e.m.f. (including copper /solder ,
kovar /copper [kovar is t he alloy used for IC leadfr ames] and aluminum/kovar [at t he
bond inside t he IC]), it is obvious t hat in pr act ical cir cuit s t he pr oblem is even mor e
complex, and it is necessar y t o t ake ext r eme car e t o ensur e t hat all t he junct ion
pair s in t he cir cuit r y ar ound a t her mocouple, except t he measur ement and r efer ence
junct ions t hemselves, ar e at t he same t emper at ur e.
Ther mocouples gener at e a volt age, albeit a ver y small one, and do not r equir e
excit at ion. As shown in Figur e 7.6D, however , t wo junct ions (T1, t he measur ement
junct ion and T2, t he r efer ence junct ion) ar e involved. If T2 = T1, t hen V2 = V1, and
t he out put volt age V = 0. Ther mocouple out put volt ages ar e oft en defined wit h a
r efer ence junct ion t emper at ur e of 0C (hence t he t er m cold or ice point junct ion), so
t he t her mocouple pr ovides an out put volt age of 0V at 0C. To maint ain syst em
accur acy, t he r efer ence junct ion must t her efor e be at a well-defined t emper at ur e
(but not necessar ily 0C). A concept ually simple appr oach t o t his need is shown in
Figur e 7.7. Alt hough an ice/wat er bat h is r elat ively easy t o define, it is quit e
inconvenient t o maint ain.
Today an ice-point r efer ence, and it s inconvenient ice/wat er bat h, is gener ally
r eplaced by elect r onics. A t emper at ur e sensor of anot her sor t (oft en a semiconduct or
sensor , somet imes a t her mist or ) measur es t he t emper at ur e of t he cold junct ion and
is used t o inject a volt age int o t he t her mocouple cir cuit which compensat es for t he
differ ence bet ween t he act ual cold junct ion t emper at ur e and it s ideal value (usually
0C) as shown in Figur e 7.8. Ideally, t he compensat ion volt age should be an exact
mat ch for t he differ ence volt age r equir ed, which is why t he diagr am gives t he
volt age as f(T2) (a function of T2) r at her t han KT2, wher e K is a simple const ant . In
pr act ice, since t he cold junct ion is r ar ely mor e t han a few t ens of degr ees fr om 0C,
and gener ally var ies by lit t le mor e t han 10C, a linear appr oximat ion (V=KT2) t o
t he mor e complex r ealit y is sufficient ly accur at e and is what is oft en used. (The
expr ession for t he out put volt age of a t her mocouple wit h it s measur ing junct ion at
TC and it s r efer ence at 0C is a polynomial of t he for m V = K
1
T + K
2
T
2
+ K
3
T
3
+
..., but t he values of t he coefficient s K
2
, K
3
, et c. ar e ver y small for most common
t ypes of t her mocouple. Refer ences 8 and 9 give t he values of t hese coefficient s for a
wide r ange of t her mocouples.)
TEMP ERATURE SENSORS
7.7
CLASSICAL COLD-JUNCTION COMPENSATION USING AN
ICE-POINT (0C) REFERENCE JUNCTION
METAL A METAL A
METAL B
ICE
BATH
0C
V(0C)
T1 V1
V1 V(0C)
T2
Figure 7.7
USING A TEMPERATURE SENSOR
FOR COLD-JUNCTION COMPENSATION
TEMPERATURE
COMPENSATION
CIRCUIT
TEMP
SENSOR
T2 V(T2) T1 V(T1)
V(OUT)
V(COMP)
SAME
TEMP
METAL A
METAL B
METAL A
COPPER COPPER
ISOTHERMAL BLOCK
V(COMP) = f(T2)
V(OUT) = V(T1) V(T2) + V(COMP)
IF V(COMP) = V(T2) V(0C), THEN
V(OUT) = V(T1) V(0C)
Figure 7.8
TEMP ERATURE SENSORS
7.8
When elect r onic cold-junct ion compensat ion is used, it is common pr act ice t o
eliminat e t he addit ional t her mocouple wir e and t er minat e t he t her mocouple leads in
t he isot her mal block in t he ar r angement shown in Figur e 7.9. The Met al A-Copper
and t he Met al B-Copper junct ions, if at t he same t emper at ur e, ar e equivalent t o t he
Met al A-Met al B t her mocouple junct ion in Figur e 7.8.
TERMINATING THERMOCOUPLE LEADS
DIRECTLY TO AN ISOTHERMAL BLOCK
TEMPERATURE
COMPENSATION
CIRCUIT
TEMP
SENSOR
METAL A
METAL B
COPPER
COPPER
COPPER
V(OUT) = V1 V(0C)
T1 V1
T2
T2
ISOTHERMAL BLOCK
Figure 7.9
The cir cuit in Figur e 7.10 condit ions t he out put of a Type K t her mocouple, while
pr oviding cold-junct ion compensat ion, for t emper at ur es bet ween 0C and 250C. The
cir cuit oper at es fr om single +3.3V t o +12V supplies and has been designed t o
pr oduce an out put volt age t r ansfer char act er ist ic of 10mV/C.
A Type K t her mocouple exhibit s a Seebeck coefficient of appr oximat ely 41V/C;
t her efor e, at t he cold junct ion, t he TMP35 volt age out put sensor wit h a t emper at ur e
coefficient of 10mV/C is used wit h R1 and R2 t o int r oduce an opposing cold-junct ion
t emper at ur e coefficient of 41V/C. This pr event s t he isot her mal, cold-junct ion
connect ion bet ween t he cir cuit 's pr int ed cir cuit boar d t r aces and t he t her mocouple's
wir es fr om int r oducing an er r or in t he measur ed t emper at ur e. This compensat ion
wor ks ext r emely well for cir cuit ambient t emper at ur es in t he r ange of 20C t o 50C.
Over a 250C measur ement t emper at ur e r ange, t he t her mocouple pr oduces an
out put volt age change of 10.151mV. Since t he r equir ed cir cuit 's out put full-scale
volt age change is 2.5V, t he gain of t he cir cuit is set t o 246.3. Choosing R4 equal t o
4.99k set s R5 equal t o 1.22M. Since t he closest 1% value for R5 is 1.21M, a
50k pot ent iomet er is used wit h R5 for fine t r im of t he full-scale out put volt age.
Alt hough t he OP193 is a single-supply op amp, it s out put st age is not r ail-t o-r ail,
and will only go down t o about 0.1V above gr ound. For t his r eason, R3 is added t o
t he cir cuit t o supply an out put offset volt age of about 0.1V for a nominal supply
volt age of 5V. This offset (10C) must be subt r act ed when making measur ement s
TEMP ERATURE SENSORS
7.9
r efer enced t o t he OP193 out put . R3 also pr ovides an open t her mocouple det ect ion,
for cing t he out put volt age t o gr eat er t han 3V should t he t her mocouple open.
Resist or R7 balances t he DC input impedance of t he OP193, and t he 0.1F film
capacit or r educes noise coupling int o it s non-inver t ing input .
R1*
24.9k
USING A TEMPERATURE SENSOR FOR
COLD-JUNCTION COMPENSATION (TMP35)
TMP35
OP193
ISOTHERMAL
BLOCK
COLD
JUNCTION
R6
100k
R4*
4.99k
R2*
102
P1
50k
R5*
1.21M
R3*
1.24M
TYPE K
THERMO
COUPLE
CHROMEL
ALUMEL

+
Cu
Cu
3.3V TO 5.5V
V
OUT
0.1 - 2.6V
* USE 1% RESISTORS
10mV/C
0 C < T < 250 C
0.1F
R7*
4.99k
0.1F
FILM
Figure 7.10
The AD594/AD595 is a complet e inst r ument at ion amplifier and t her mocouple cold
junct ion compensat or on a monolit hic chip (see Figur e 7.11). It combines an ice point
r efer ence wit h a pr ecalibr at ed amplifier t o pr ovide a high level (10mV/C) out put
dir ect ly fr om t he t her mocouple signal. Pin-st r apping opt ions allow it t o be used as a
linear amplifier -compensat or or as a swit ched out put set -point cont r oller using
eit her fixed or r emot e set -point cont r ol. It can be used t o amplify it s compensat ion
volt age dir ect ly, t her eby becoming a st and-alone Celsius t r ansducer wit h 10mV/C
out put . In such applicat ions it is ver y impor t ant t hat t he IC chip is at t he same
t emper at ur e as t he cold junct ion of t he t her mocouple, which is usually achieved by
keeping t he t wo in close pr oximit y and isolat ed fr om any heat sour ces.
The AD594/AD595 includes a t her mocouple failur e alar m t hat indicat es if one or
bot h t her mocouple leads open. The alar m out put has a flexible for mat which
includes TTL dr ive capabilit y. The device can be power ed fr om a single-ended supply
(which may be as low as +5V), but by including a negat ive supply, t emper at ur es
below 0C can be measur ed. To minimize self-heat ing, an unloaded AD594/AD595
will oper at e wit h a supply cur r ent of 160A, but is also capable of deliver ing 5mA
t o a load.
The AD594 is pr ecalibr at ed by laser wafer t r imming t o mat ch t he char act er ist ics of
t ype J (ir on/const ant an) t her mocouples, and t he AD595 is laser t r immed for t ype K
TEMP ERATURE SENSORS
7.10
(chr omel/alumel). The t emper at ur e t r ansducer volt ages and gain cont r ol r esist or s
ar e available at t he package pins so t hat t he cir cuit can be r ecalibr at ed for ot her
t her mocouple t ypes by t he addit ion of r esist or s. These t er minals also allow mor e
pr ecise calibr at ion for bot h t her mocouple and t her momet er applicat ions. The
AD594/AD595 is available in t wo per for mance gr ades. The C and t he A ver sions
have calibr at ion accur acies of 1C and 3C, r espect ively. Bot h ar e designed t o be
used wit h cold junct ions bet ween 0 t o +50C. The cir cuit shown in Figur e 7.11 will
pr ovide a dir ect out put fr om a t ype J t her mocouple (AD594) or a t ype K
t her mocouple (AD595) capable of measur ing 0 t o +300C.
AD594/AD595 MONOLITHIC THERMOCOUPLE AMPLIFIERS
WITH COLD-JUNCTION COMPENSATION
ICE
POINT
COMP
+
OVERLOAD
DETECT
V
OUT
10mV/C
+5V
BROKEN
THERMOCOUPLE
ALARM
4.7k
G
+
TC

+TC
+
+A
THERMOCOUPLE
G
AD594/AD595
TYPE J: AD594
TYPE K: AD595
0.1F
Figure 7.11
The AD596/AD597 ar e monolit hic set -point cont r oller s which have been opt imized
for use at elevat ed t emper at ur es as ar e found in oven cont r ol applicat ions. The
device cold-junct ion compensat es and amplifies a t ype J /K t her mocouple t o der ive an
int er nal signal pr opor t ional t o t emper at ur e. They can be configur ed t o pr ovide a
volt age out put (10mV/C) dir ect ly fr om t ype J /K t her mocouple signals. The device is
packaged in a 10-pin met al can and is t r immed t o oper at e over an ambient r ange
fr om +25C t o +100C. The AD596 will amplify t her mocouple signals cover ing t he
ent ir e 200C t o +760C t emper at ur e r ange r ecommended for t ype J t her mocouples
while t he AD597 can accommodat e 200C t o +1250C t ype K input s. They have a
calibr at ion accur acy of 4C at an ambient t emper at ur e of 60C and an ambient
t emper at ur e st abilit y specificat ion of 0.05C/C fr om +25C t o +100C.
None of t he t her mocouple amplifier s pr eviously descr ibed compensat e for
t her mocouple non-linear it y, t hey only pr ovide condit ioning and volt age gain. High
TEMP ERATURE SENSORS
7.11
r esolut ion ADCs such as t he AD77XX family can be used t o digit ize t he
t her mocouple out put dir ect ly, allowing a micr ocont r oller t o per for m t he t r ansfer
funct ion linear izat ion as shown in Figur e 7.12. The t wo mult iplexed input s t o t he
ADC ar e used t o digit ize t he t her mocouple volt age and t he cold-junct ion
t emper at ur e sensor out put s dir ect ly. The input PGA gain is pr ogr ammable fr om 1
t o 128, and t he ADC r esolut ion is bet ween 16 and 22 bit s (depending upon t he
par t icular ADC select ed). The micr ocont r oller per for ms bot h t he cold-junct ion
compensat ion and t he linear izat ion ar it hmet ic.
AD77XX ADC USED WITH
TMP35 TEMPERATURE SENSOR FOR CJC
MUX
TMP35

ADC
OUTPUT
REGISTER
CONTROL
REGISTER
SERIAL
INTERFACE
PGA
3V OR 5V
(DEPENDING ON ADC)
THERMO
COUPLE
AD77XX SERIES
(16-22 BITS)
TO MICROCONTROLLER
G=1 TO 128
0.1F
AIN1+
AIN1
AIN2
AIN2+
Figure 7.12
RESI STANCE TEMP ERATURE DETECTORS (RTDS)
The Resist ance Temper at ur e Det ect or , or t he RTD, is a sensor whose r esist ance
changes wit h t emper at ur e. Typically built of a plat inum (Pt ) wir e wr apped ar ound a
cer amic bobbin, t he RTD exhibit s behavior which is mor e accur at e and mor e linear
over wide t emper at ur e r anges t han a t her mocouple. Figur e 7.13 illust r at es t he
t emper at ur e coefficient of a 100 RTD and t he Seebeck coefficient of a Type S
t her mocouple. Over t he ent ir e r ange (appr oximat ely 200C t o +850C), t he RTD is
a mor e linear device. Hence, linear izing an RTD is less complex.
TEMP ERATURE SENSORS
7.12
RESISTANCE TEMPERATURE DETECTORs (RTD)
n Platinum (Pt) the Most Common
n 100, , 1000 Standard Values
n Typical TC = 0.385% / C,
0.385 / / C for 100 Pt RTD
n Good Linearity - Better than Thermocouple,
Easily Compensated
0 400 800
0.275
0.300
0.325
0.350
0.375
0.400
5.50
6.50
7.50
8.50
9.50
10.5
11.5
TYPE S
THERMOCOUPLE
100 Pt RTD
RTD
RESISTANCE
TC, / C
TYPE S
THERMOCOUPLE
SEEBECK
COEFFICIENT,
V / C
TEMPERATURE - C
Figure 7.13
Unlike a t her mocouple, however , an RTD is a passive sensor and r equir es cur r ent
excit at ion t o pr oduce an out put volt age. The RTD's low t emper at ur e coefficient of
0.385%/C r equir es similar high-per for mance signal condit ioning cir cuit r y t o t hat
used by a t her mocouple; however , t he volt age dr op acr oss an RTD is much lar ger
t han a t her mocouple out put volt age. A syst em designer may opt for lar ge value
RTDs wit h higher out put , but lar ge-valued RTDs exhibit slow r esponse t imes.
Fur t her mor e, alt hough t he cost of RTDs is higher t han t hat of t her mocouples, t hey
use copper leads, and t her moelect r ic effect s fr om t er minat ing junct ions do not affect
t heir accur acy. And finally, because t heir r esist ance is a funct ion of t he absolut e
t emper at ur e, RTDs r equir e no cold-junct ion compensat ion.
Caut ion must be exer cised using cur r ent excit at ion because t he cur r ent t hr ough t he
RTD causes heat ing. This self-heat ing changes t he t emper at ur e of t he RTD and
appear s as a measur ement er r or . Hence, car eful at t ent ion must be paid t o t he
design of t he signal condit ioning cir cuit r y so t hat self-heat ing is kept below 0.5C.
Manufact ur er s specify self-heat ing er r or s for var ious RTD values and sizes in st ill
and in moving air . To r educe t he er r or due t o self-heat ing, t he minimum cur r ent
should be used for t he r equir ed syst em r esolut ion, and t he lar gest RTD value chosen
t hat r esult s in accept able r esponse t ime.
Anot her effect t hat can pr oduce measur ement er r or is volt age dr op in RTD lead
wir es. This is especially cr it ical wit h low-value 2-wir e RTDs because t he
t emper at ur e coefficient and t he absolut e value of t he RTD r esist ance ar e bot h small.
If t he RTD is locat ed a long dist ance fr om t he signal condit ioning cir cuit r y, t hen t he
lead r esist ance can be ohms or t ens of ohms, and a small amount of lead r esist ance
can cont r ibut e a significant er r or t o t he t emper at ur e measur ement . To illust r at e
TEMP ERATURE SENSORS
7.13
t his point , let us assume t hat a 100 plat inum RTD wit h 30-gauge copper leads is
locat ed about 100 feet fr om a cont r oller 's display console. The r esist ance of 30-gauge
copper wir e is 0.105/ft , and t he t wo leads of t he RTD will cont r ibut e a t ot al 21 t o
t he net wor k which is shown in Figur e 7.14. This addit ional r esist ance will pr oduce a
55C er r or in t he measur ement ! The leads' t emper at ur e coefficient can cont r ibut e an
addit ional, and possibly significant , er r or t o t he measur ement . To eliminat e t he
effect of t he lead r esist ance, a 4-wir e t echnique is used.
A 100 Pt RTD WITH 100 FEET
OF 30-GAUGE LEAD WIRES
R = 10.5
R = 10.5
COPPER
COPPER
100
Pt RTD
RESISTANCE TC OF COPPER = 0.40%/C @ 20C
RESISTANCE TC OF Pt RTD = 0.385%/ C @ 20C
Figure 7.14
In Figur e 7.15, a 4-wir e, or Kelvin, connect ion is made t o t he RTD. A const ant
cur r ent is applied t hough t he FORCE leads of t he RTD, and t he volt age acr oss t he
RTD it self is measur ed r emot ely via t he SENSE leads. The measur ing device can be
a DVM or an inst r ument at ion amplifier , and high accur acy can be achieved pr ovided
t hat t he measur ing device exhibit s high input impedance and/or low input bias
cur r ent . Since t he SENSE leads do not car r y appr eciable cur r ent , t his t echnique is
insensit ive t o lead wir e lengt h. Sour ces of er r or s ar e t he st abilit y of t he const ant
cur r ent sour ce and t he input impedance and/or bias cur r ent s in t he amplifier or
DVM.
RTDs ar e gener ally configur ed in a four -r esist or br idge cir cuit . The br idge out put is
amplified by an inst r ument at ion amplifier for fur t her pr ocessing. However , high
r esolut ion measur ement ADCs such as t he AD77XX ser ies allow t he RTD out put t o
be digit ized dir ect ly. In t his manner , linear izat ion can be per for med digit ally,
t her eby easing t he analog cir cuit r equir ement s.
TEMP ERATURE SENSORS
7.14
FOUR-WIRE OR KELVIN CONNECTION TO Pt RTD
FOR ACCURATE MEASUREMENTS
I
FORCE
LEAD
FORCE
LEAD
R
LEAD
R
LEAD
100
Pt RTD
SENSE
LEAD
SENSE
LEAD
TO HIGH - Z
IN-AMP OR ADC
Figure 7.15
Figur e 7.16 shows a 100 Pt RTD dr iven wit h a 400A excit at ion cur r ent sour ce.
The out put is digit ized by one of t he AD77XX ser ies ADCs. Not e t hat t he RTD
excit at ion cur r ent sour ce also gener at es t he 2.5V r efer ence volt age for t he ADC via
t he 6.25k r esist or . Var iat ions in t he excit at ion cur r ent do not affect t he cir cuit
accur acy, since bot h t he input volt age and t he r efer ence volt age var y r at iomet r ically
wit h t he excit at ion cur r ent . However , t he 6.25k r esist or must have a low
t emper at ur e coefficient t o avoid er r or s in t he measur ement . The high r esolut ion of
t he ADC and t he input PGA (gain of 1 t o 128) eliminat es t he need for addit ional
condit ioning cir cuit s.
The ADT70 is a complet e Pt RTD signal condit ioner which pr ovides an out put
volt age of 5mV/C when using a 1k RTD (see Figur e 7.17). The Pt RTD and t he
1k r efer ence r esist or ar e bot h excit ed wit h 1mA mat ched cur r ent sour ces. This
allows t emper at ur e measur ement s t o be made over a r ange of appr oximat ely 50C
t o +800C.
The ADT70 cont ains t he t wo mat ched cur r ent sour ces, a pr ecision r ail-t o-r ail out put
inst r ument at ion amplifier , a 2.5V r efer ence, and an uncommit t ed r ail-t o-r ail out put
op amp. The ADT71 is t he same as t he ADT70 except t he int er nal volt age r efer ence
is omit t ed. A shut down funct ion is included for bat t er y power ed equipment t hat
r educes t he quiescent cur r ent fr om 3mA t o 10A. The gain or full-scale r ange for t he
Pt RTD and ADT701 syst em is set by a pr ecision ext er nal r esist or connect ed t o t he
inst r ument at ion amplifier . The uncommit t ed op amp may be used for scaling t he
int er nal volt age r efer ence, pr oviding a "Pt RTD open" signal or "over t emper at ur e"
war ning, pr oviding a heat er swit ching signal, or ot her ext er nal condit ioning
det er mined by t he user . The ADT70 is specified for oper at ion fr om 40C t o +125C
and is available in 20-pin DIP and SOIC packages.
TEMP ERATURE SENSORS
7.15
INTERFACING A Pt RTD TO A HIGH RESOLUTION ADC

ADC
OUTPUT
REGISTER
CONTROL
REGISTER
SERIAL
INTERFACE
PGA
3V OR 5V
(DEPENDING ON ADC)
AD77XX SERIES
(16-22 BITS)
TO MICROCONTROLLER
G=1 TO 128
400A
100
Pt RTD
+

AIN1+
AIN1
MUX
+VREF
VREF
R
REF
6.25k
Figure 7.16
CONDITIONING THE PLATINUM RTD USING THE ADT70
2.5V
REFERENCE
SHUT
DOWN
1k Pt
RTD
1k REF
RES
INST
AMP
R
G
= 50k
MATCHED
1mA SOURCES
+5V
-1V TO -5V
OUT = 5mV/ C
ADT70
GND
REF
Note: Some Pins Omitted
for Clarity
+

0.1F
Figure 7.17
TEMP ERATURE SENSORS
7.16
THERMI STORS
Similar in funct ion t o t he RTD, t her mist or s ar e low-cost t emper at ur e-sensit ive
r esist or s and ar e const r uct ed of solid semiconduct or mat er ials which exhibit a
posit ive or negat ive t emper at ur e coefficient . Alt hough posit ive t emper at ur e
coefficient devices ar e available, t he most commonly used t her mist or s ar e t hose wit h
a negat ive t emper at ur e coefficient . Figur e 7.18 shows t he r esist ance-t emper at ur e
char act er ist ic of a commonly used NTC (Negat ive Temper at ur e Coefficient )
t her mist or . The t her mist or is highly non-linear and, of t he t hr ee t emper at ur e
sensor s discussed, is t he most sensit ive.
RESISTANCE CHARACTERISTICS OF A
10k NTC THERMISTOR
0
10
20
30
40
0 20 40 60 80 100
THERMISTOR
RESISTANCE
k
TEMPERATURE - C
Nominal Value @ 25 C
ALPHA THERMISTOR, INCORPORATED
RESISTANCE/TEMPERATURE CURVE 'A'
10 k THERMISTOR, #13A1002-C3
Figure 7.18
The t her mist or 's high sensit ivit y (t ypically, 44,000ppm/C at 25C, as shown in
Figur e 7.19), allows it t o det ect minut e var iat ions in t emper at ur e which could not be
obser ved wit h an RTD or t her mocouple. This high sensit ivit y is a dist inct advant age
over t he RTD in t hat 4-wir e Kelvin connect ions t o t he t her mist or ar e not needed t o
compensat e for lead wir e er r or s. To illust r at e t his point , suppose a 10k NTC
t her mist or , wit h a t ypical 25C t emper at ur e coefficient of 44,000ppm/C, wer e
subst it ut ed for t he 100 Pt RTD in t he example given ear lier , t hen a t ot al lead wir e
r esist ance of 21 would gener at e less t han 0.05C er r or in t he measur ement . This is
r oughly a fact or of 500 impr ovement in er r or over an RTD.
TEMP ERATURE SENSORS
7.17
TEMPERATURE COEFFICIENT OF
10k NTC THERMISTOR
-20000
-30000
-40000
-50000
-60000
0 20 40 60 80 100
THERMISTOR
TEMPERATURE
COEFFICIENT
ppm/ C
TEMPERATURE - C
ALPHA THERMISTOR, INCORPORATED
RESISTANCE/TEMPERATURE CURVE 'A'
10 k THERMISTOR, #13A1002-C3
Figure 7.19
However , t he t her mist or 's high sensit ivit y t o t emper at ur e does not come wit hout a
pr ice. As was shown in Figur e 7.18, t he t emper at ur e coefficient of t her mist or s does
not decr ease linear ly wit h incr easing t emper at ur e as it does wit h RTDs; t her efor e,
linear izat ion is r equir ed for all but t he nar r owest of t emper at ur e r anges. Ther mist or
applicat ions ar e limit ed t o a few hundr ed degr ees at best because t hey ar e mor e
suscept ible t o damage at high t emper at ur es. Compar ed t o t her mocouples and RTDs,
t her mist or s ar e fr agile in const r uct ion and r equir e car eful mount ing pr ocedur es t o
pr event cr ushing or bond separ at ion. Alt hough a t her mist or 's r esponse t ime is shor t
due t o it s small size, it s small t her mal mass makes it ver y sensit ive t o self-heat ing
er r or s.
Ther mist or s ar e ver y inexpensive, highly sensit ive t emper at ur e sensor s. However ,
we have shown t hat a t her mist or 's t emper at ur e coefficient var ies fr om 44,000
ppm/C at 25C t o 29,000ppm/C at 100C. Not only is t his non-linear it y t he
lar gest sour ce of er r or in a t emper at ur e measur ement , it also limit s useful
applicat ions t o ver y nar r ow t emper at ur e r anges if linear izat ion t echniques ar e not
used.
It is possible t o use a t her mist or over a wide t emper at ur e r ange only if t he syst em
designer can t oler at e a lower sensit ivit y t o achieve impr oved linear it y. One appr oach
t o linear izing a t her mist or is simply shunt ing it wit h a fixed r esist or . Par alleling t he
t her mist or wit h a fixed r esist or incr eases t he linear it y significant ly. As shown in
Figur e 7.20, t he par allel combinat ion exhibit s a mor e linear var iat ion wit h
t emper at ur e compar ed t o t he t her mist or it self. Also, t he sensit ivit y of t he
combinat ion st ill is high compar ed t o a t her mocouple or RTD. The pr imar y
TEMP ERATURE SENSORS
7.18
disadvant age t o t his t echnique is t hat linear izat ion can only be achieved wit hin a
nar r ow r ange.
LINEARIZATION OF NTC THERMISTOR
USING A 5.17k SHUNT RESISTOR
0
10
20
30
40
0 20 40 60 80 100
RESISTANCE
k
TEMPERATURE - C
THERMISTOR
PARALLEL COMBINATION
Figure 7.20
The value of t he fixed r esist or can be calculat ed fr om t he following equat ion:
R =
RT RT RT RT RT
RT RT RT
2 1 3 2 1 3
1 3 2 2
+
+
( )
,
wher e RT1 is t he t her mist or r esist ance at T1, t he lowest t emper at ur e in t he
measur ement r ange, RT3 is t he t her mist or r esist ance at T3, t he highest
t emper at ur e in t he r ange, and RT2 is t he t her mist or r esist ance at T2, t he midpoint ,
T2 = (T1 +T3)/2.
For a t ypical 10k NTC t her mist or , RT1 = 32,650 at 0C, RT2 = 6,532 at 35C,
and RT3 = 1,752 at 70C. This r esult s in a value of 5.17k for R. The accur acy
needed in t he signal condit ioning cir cuit r y depends on t he linear it y of t he net wor k.
For t he example given above, t he net wor k shows a non-linear it y of 2.3C/ + 2.0 C.
The out put of t he net wor k can be applied t o an ADC t o per for m fur t her linear izat ion
as shown in Figur e 7.21. Not e t hat t he out put of t he t her mist or net wor k has a slope
of appr oximat ely 10mV/C, which implies a 12-bit ADC has mor e t han sufficient
r esolut ion.
TEMP ERATURE SENSORS
7.19
LINEARIZED THERMISTOR AMPLIFIER
10k NTC
THERMISTOR
5.17k
LINEARIZATION
RESISTOR
226A
LINEARITY 2C, 0C TO +70C
V
OUT
0.994V @ T = 0C
V
OUT
0.294V @ T =70C
V
OUT
/ T 10mV/C
AMPLIFIER
OR ADC
Figure 7.21
SEMI CONDUCTOR TEMP ERATURE SENSORS
Moder n semiconduct or t emper at ur e sensor s offer high accur acy and high linear it y
over an oper at ing r ange of about 55C t o +150C. Int er nal amplifier s can scale t he
out put t o convenient values, such as 10mV/C. They ar e also useful in cold-junct ion-
compensat ion cir cuit s for wide t emper at ur e r ange t her mocouples.
All semiconduct or t emper at ur e sensor s make use of t he r elat ionship bet ween a
bipolar junct ion t r ansist or 's (BJ T) base-emit t er volt age t o it s collect or cur r ent :
V
BE
kT
q
I
c
I
s

|
.

`
,
ln
wher e k is Bolt zmann's const ant , T is t he absolut e t emper at ur e, q is t he char ge of
an elect r on, and I
s
is a cur r ent r elat ed t o t he geomet r y and t he t emper at ur e of t he
t r ansist or s. (The equat ion assumes a volt age of at least a few hundr ed mV on t he
collect or , and ignor es Ear ly effect s.)
If we t ake N t r ansist or s ident ical t o t he fir st (see Figur e 7.22) and allow t he t ot al
cur r ent I
c
t o be shar ed equally among t hem, we find t hat t he new base-emit t er
volt age is given by t he equat ion
V
N
kT
q
I
c
N I
s

|
.

`
,
ln
TEMP ERATURE SENSORS
7.20
BASIC RELATIONSHIPS FOR SEMICONDUCTOR
TEMPERATURE SENSORS
I
C
I
C
V
BE
V
N
V
BE
V
BE
V
N
kT
q
N = = = = ln( )
V
BE
kT
q
I
C
I
S
= =






ln V
N
kT
q
I
C
N I
S
= =







ln
INDEPENDENT OF I
C
, I
S
ONE TRANSISTOR
N TRANSISTORS
Figure 7.22
Neit her of t hese cir cuit s is of much use by it self because of t he st r ongly t emper at ur e
dependent cur r ent I
s
, but if we have equal cur r ent s in one BJ T and N similar BJ Ts
t hen t he expr ession for t he difference bet ween t he t wo base-emit t er volt ages is
pr opor t ional t o absolut e t emper at ur e and does not cont ain I
s
.
V
BE
V
BE
V
N
kT
q
I
c
I
s
kT
q
I
c
N I
s

|
.

`
,

|
.

`
,
ln ln
V
BE
V
BE
V
N
kT
q
I
c
I
s
I
c
N I
s

|
.

`
,

|
.

`
,

]
]
]
]
ln ln
V
BE
V
BE
V
N
kT
q
I
c
I
s
I
c
N I
s
kT
q
N
|
.

`
,

|
.

`
,

]
]
]
]
]
]
ln ln( )
The cir cuit shown in Figur e 7.23 implement s t he above equat ion and is known as
t he "Br okaw Cell" (see Refer ence 10). The volt age V
BE
= V
BE
V
N
appear s acr oss
r esist or R2. The emit t er cur r ent in Q2 is t her efor e V
BE
/R2. The op amp's ser vo
loop and t he r esist or s, R, for ce t he same cur r ent t o flow t hr ough Q1. The Q1 and Q2
cur r ent s ar e equal and ar e summed and flow int o r esist or R1. The cor r esponding
volt age developed acr oss R1 is pr opor t ional t o absolut e t emper at ur e (PTAT) and
given by:
TEMP ERATURE SENSORS
7.21
( )
V
PTAT
V
BE
V
N
R
R
R
kT
q
N

2R1
2
2
1
2
ln( ) .
CLASSIC BANDGAP TEMPERATURE SENSOR
"BROKAW CELL" R R
+
I
2
I
1
Q2
NA
Q1
A
R2
R1
V
N
V
BE
(Q1)
V
BANDGAP
= 1.205V
+V
IN
V
PTAT
= 2
R1
R2
kT
q
ln(N)
V
BE
V
BE
V
N
kT
q
N = = = = ln( )
Figure 7.23
The bandgap cell r efer ence volt age, V
BANDGAP
, appear s at t he base of Q1 and is
t he sum of V
BE
(Q1) and V
PTAT
. V
BE(Q1)
is complement ar y t o absolut e
t emper at ur e (CTAT), and summing it wit h V
PTAT
causes t he bandgap volt age t o be
const ant wit h r espect t o t emper at ur e (assuming pr oper choice of R1/R2 r at io and N
t o make t he bandgap volt age equal t o1.205V). This cir cuit is t he basic band-gap
t emper at ur e sensor , and is widely used in semiconduct or t emper at ur e sensor s.
Cu r r en t a n d Volt a ge Ou t p u t Temp er a t u r e Sen sor s
The concept s used in t he bandgap t emper at ur e sensor discussion above can be used
as t he basis for a var iet y of IC t emper at ur e sensor s t o gener at e eit her cur r ent or
volt age out put s. The AD592 and TMP17 (see Figur e 7.24) ar e cur r ent out put
sensor s which have scale fact or s of 1A/K. The sensor s do not r equir e ext er nal
calibr at ion and ar e available in sever al accur acy gr ades. The AD592 is available in
t hr ee accur acy gr ades. The highest gr ade ver sion (AD592CN) has a maximum er r or
@25C of 0.5C and 1.0C er r or fr om 25C t o +105C. Linear it y er r or is 0.35C.
The TMP17 is available in t wo accur acy gr ades. The highest gr ade ver sion
(TMP17F) has a maximum er r or @25C of 2.5C and 3.5C er r or fr om 40C t o
+105C. Typical linear it y er r or is 0.5C. The AD592 is available in a TO-92 package
and t he TMP17 in an SO-8 package.
TEMP ERATURE SENSORS
7.22
CURRENT OUTPUT SENSORS: AD592, TMP17
n 1A/K Scale Factor
n Nominal Output Current @ +25C: 298.2A
n Operation from 4V to 30V
n 0.5C Max Error @ 25C, 1.0C Error Over Temp,
0.1C Typical Nonlinearity (AD592CN)
n 2.5C Max Error @ 25C, 3.5C Error Over Temp,
0.5C Typical Nonlinearity (TMP17F)
n AD592 Specified from 25C to +105C
n TMP17 Specified from 40C to +105C
V+
V
AD592: TO-92 PACKAGE
TMP17: SO-8 PACKAGE
Figure 7.24
RATIOMETRIC VOLTAGE OUTPUT SENSORS
R(T)
I(V
S
)
AD22103
V
S
= +3.3V
REFERENCE
INPUT
ADC
+

GND
V
OUT
V
OUT
V
S
V
V
mV
C
T
A
= = + +








3 3
0 25
28
.
.
0.1F
Figure 7.25
TEMP ERATURE SENSORS
7.23
In some cases, it is desir able for t he out put of a t emper at ur e sensor t o be r at iomet r ic
wit h it s supply volt age. The AD22103 (see Figur e 7.25) has an out put t hat is
r at iomet r ic wit h it s supply volt age (nominally 3.3V) accor ding t o t he equat ion:
V
OUT
V
S
V
V
mV
C
T
A
+

|
.

`
,

3 3
0 25
28
.
. .
The cir cuit shown in Figur e 7.25 uses t he AD22103 power supply as t he r efer ence t o
t he ADC, t her eby eliminat ing t he need for a pr ecision volt age r efer ence. The
AD22103 is specified over a r ange of 0C t o +100C and has an accur acy bet t er t han
2.5C and a linear it y bet t er t han 0.5C.
The TMP35/TMP36/TMP37 ar e low volt age (2.7V t o 5.5V) SOT-23 (5-pin), SO-8, or
TO-92 packaged volt age out put t emper at ur e sensor s wit h a 10mV/C (TMP35/36) or
20mV/C (TMP37) scale fact or (see Figur e 7.26). Supply cur r ent is below 50A,
pr oviding ver y low self-heat ing (less t han 0.1C in st ill air ). A shut down feat ur e is
pr ovided which r educes t he cur r ent t o 0.5A.
The TMP35 pr ovides a 250mV out put at +25C and r eads t emper at ur e fr om +10C
t o +125C. The TMP36 is specified fr om 40C t o +125C. and pr ovides a 750mV
out put at 25C. Bot h t he TMP35 and TMP36 have an out put scale fact or of
+10mV/C. The TMP37 is int ended for applicat ions over t he r ange +5C t o +100C,
and pr ovides an out put scale fact or of 20mV/C. The TMP37 pr ovides a 500mV
out put at +25C.
ABSOLUTE VOLTAGE OUTPUT SENSORS
WITH SHUTDOWN
n V
OUT
:
u TMP35, 250mV @ 25C, 10mV/C (+10C to +125C)
u TMP36, 750mV @ 25C, 10mV/C (40C to +125C)
u TMP37, 500mV @ 25C, 20mV/C ( +5C to +100C)
n 2C Error Over Temp (Typical), 0.5C Non-Linearity (Typical)
n Specified 40C to +125C
n 50A Quiescent Current, 0.5A in Shutdown Mode
TMP35
TMP36
TMP37
+V
S
= 2.7V TO 5.5V
V
OUT
SHUTDOWN
SOT-23-5
ALSO
SO-8
OR TO-92
0.1F
Figure 7.26
TEMP ERATURE SENSORS
7.24
The ADT45/ADT50 ar e volt age out put t emper at ur e sensor s packaged in a SOT-23-3
package designed for an oper at ing volt age of 2.7V t o 12V (see Figur e 7.27). The
devices ar e specified over t he r ange of 40C t o +125C. The out put scale fact or for
bot h devices is 10mV/C. Typical accur acies ar e t1C at +25C and t2C over t he
40C t o +125C r ange. The ADT45 pr ovides a 250mV out put at +25C and is
specified for t emper at ur e fr om 0C t o +100C. The ADT50 pr ovides a 750mV out put
at +25C and is specified for t emper at ur e fr om 40C t o +125C.
ADT45/ADT50 ABSOLUTE VOLTAGE OUTPUT SENSORS
n V
OUT
:
u ADT45, 250mV @ 25C, 10mV/C Scale Factor
u ADT50, 750mV @ 25C, 10mV/C Scale Factor
n 2C Error Over Temp (Typical), 0.5C Non-Linearity (Typical)
n Specified 40C to +125C
n 60A Quiescent Current
ADT45
ADT50
+V
S
= 2.7V TO 12V
V
OUT
0.1F
SOT-23
Figure 7.27
If t he ADT45/ADT50 sensor s ar e t her mally at t ached and pr ot ect ed, t hey can be
used in any t emper at ur e measur ement applicat ion wher e t he maximum
t emper at ur e r ange of t he medium is bet ween 40C t o +125C. Pr oper ly cement ed
or glued t o t he sur face of t he medium, t hese sensor s will be wit hin 0.01C of t he
sur face t emper at ur e. Caut ion should be exer cised, as any wir ing t o t he device can
act as heat pipes, int r oducing er r or s if t he sur r ounding air -sur face int er face is not
isot her mal. Avoiding t his condit ion is easily achieved by dabbing t he leads of t he
sensor and t he hookup wir es wit h a bead of t her mally conduct ive epoxy. This will
ensur e t hat t he ADT45/ADT50 die t emper at ur e is not affect ed by t he sur r ounding
air t emper at ur e.
TEMP ERATURE SENSORS
7.25
In t he SOT-23-3 package, t he t her mal r esist ance junct ion-t o-case,
J C
, is 180C/W.
The t her mal r esist ance case-t o-ambient ,
CA
, is t he differ ence bet ween
J A
and

J C
, and is det er mined by t he char act er ist ics of t he t her mal connect ion. Wit h no air
flow and t he device solder ed on a PC boar d,
J A
is 300C/W. The t emper at ur e
sensor 's power dissipat ion, P
D
, is t he pr oduct of t he t ot al volt age acr oss t he device
and it s t ot al supply cur r ent (including any cur r ent deliver ed t o t he load). The r ise in
die t emper at ur e above t he medium's ambient t emper at ur e is given by:
T
J
= P
D
(
J C
+
CA
) + T
A
.
Thus, t he die t emper at ur e r ise of an unloaded ADT45/ADT50 (SOT-23-3 package)
solder ed on a boar d in st ill air at 25C and dr iven fr om a +5V supply (quiescent
cur r ent = 60A, P
D
= 300W) is less t han 0.09C. In or der t o pr event fur t her
t emper at ur e r ise, it is impor t ant t o minimize t he load cur r ent , always keeping it less
t han 100A.
The t r ansient r esponse of t he ADT45/ADT50 sensor s t o a st ep change in
t emper at ur e is det er mined by t he t her mal r esist ances and t he t her mal mass of t he
die and t he case. The t her mal mass of t he case var ies wit h t he measur ement
medium since it includes anyt hing t hat is in dir ect cont act wit h t he package. In all
pr act ical cases, t he t her mal mass of t he case is t he limit ing fact or in t he t her mal
r esponse t ime of t he sensor and can be r epr esent ed by a single-pole RC t ime
const ant . Ther mal mass is oft en consider ed t he t her mal equivalent of elect r ical
capacit ance.
The t her mal t ime const ant of a t emper at ur e sensor is defined t o be t he t ime
r equir ed for t he sensor t o r each 63.2% of t he final value for a st ep change in t he
t emper at ur e. Figur e 7.28 shows t he t her mal t ime const ant of t he ADT45/ADT50
ser ies of sensor s wit h t he SOT-23-3 package solder ed t o 0.338" x 0.307" copper PC
boar d as a funct ion of air flow velocit y. Not e t he r apid dr op fr om 32 seconds t o 12
seconds as t he air velocit y incr eases fr om 0 (st ill air ) t o 100 LFPM. As a point of
r efer ence, t he t her mal t ime const ant of t he ADT45/ADT50 ser ies in a st ir r ed oil bat h
is less t han 1 second, which ver ifies t hat t he major par t of t he t her mal t ime const ant
is det er mined by t he case.
The power supply pin of t hese sensor s should be bypassed t o gr ound wit h a 0.1F
cer amic capacit or having ver y shor t leads (pr efer ably sur face mount ) and locat ed as
close t o t he power supply pin as possible. Since t hese t emper at ur e sensor s oper at e
on ver y lit t le supply cur r ent and could be exposed t o ver y host ile elect r ical
envir onment s, it is impor t ant t o minimize t he effect s of EMI/RFI on t hese devices.
The effect of RFI on t hese t emper at ur e sensor s is manifest ed as abnor mal DC shift s
in t he out put volt age due t o r ect ificat ion of t he high fr equency noise by t he int er nal
IC junct ions. In t hose cases wher e t he devices ar e oper at ed in t he pr esence of high
fr equency r adiat ed or conduct ed noise, a lar ge value t ant alum elect r olyt ic capacit or
(>2.2F) placed acr oss t he 0.1F cer amic may offer addit ional noise immunit y.
TEMP ERATURE SENSORS
7.26
THERMAL RESPONSE IN FORCED AIR FOR SOT-23-3
0 100 200 300 400
500
600 700
0
5
10
15
20
25
30
35
AIR VELOCITY - LFPM
TIME
CONSTANT-
SECONDS
SOT-23-3 SOLDERED TO 0.338" x 0.307" Cu PCB
V+ = 2.7V TO 5V
NO LOAD
Figure 7.28
Di gi t a l Ou t p u t Temp er a t u r e Sen sor s
Temper at ur e sensor s which have digit al out put s have a number of advant ages over
t hose wit h analog out put s, especially in r emot e applicat ions. Opt o-isolat or s can also
be used t o pr ovide galvanic isolat ion bet ween t he r emot e sensor and t he
measur ement syst em. A volt age-t o-fr equency conver t er dr iven by a volt age out put
t emper at ur e sensor accomplishes t his funct ion, however , mor e sophist icat ed ICs ar e
now available which ar e mor e efficient and offer sever al per for mance advant ages.
The TMP03/TMP04 digit al out put sensor family includes a volt age r efer ence,
V
PTAT
gener at or , sigma-delt a ADC, and a clock sour ce (see Figur e 7.29). The
sensor out put is digit ized by a fir st -or der sigma-delt a modulat or , also known as t he
"char ge balance" t ype analog-t o-digit al conver t er . This conver t er ut ilizes t ime-
domain over sampling and a high accur acy compar at or t o deliver 12 bit s of effect ive
accur acy in an ext r emely compact cir cuit .
The out put of t he sigma-delt a modulat or is encoded using a pr opr iet ar y t echnique
which r esult s in a ser ial digit al out put signal wit h a mar k-space r at io for mat (see
Figur e 7.30) t hat is easily decoded by any micr opr ocessor int o eit her degr ees
cent igr ade or degr ees Fahr enheit , and r eadily t r ansmit t ed over a single wir e. Most
impor t ant ly, t his encoding met hod avoids major er r or sour ces common t o ot her
modulat ion t echniques, as it is clock-independent . The nominal out put fr equency is
35Hz at + 25C, and t he device oper at es wit h a fixed high-level pulse widt h (T1) of
10ms.
TEMP ERATURE SENSORS
7.27
DIGITAL OUTPUT SENSORS: TMP03/04
REFERENCE
VOLTAGE
TEMP
SENSOR
VPTAT
SIGMA-DELTA
ADC
CLOCK
(1MHz)
OUTPUT
(TMP04)
OUTPUT
(TMP03)
TMP03/TMP04
+V
S
= 4.5 TO 7V
GND
Figure 7.29
TMP03/TMP04 OUTPUT FORMAT
n T1 Nominal Pulse Width = 10ms
n 1.5C Error Over Temp, 0.5C Non-Linearity (Typical)
n Specified 40C to +100C
n Nominal T1/T2 @ 0C = 60%
n Nominal Frequency @ +25C = 35Hz
n 6.5mW Power Consumption @ 5V
n TO-92, SO-8, or TSSOP Packages
T1 T2
TEMPERATURE C
T
T
( ) = =





235
400 1
2
TEMPERATURE F
T
T
( ) = =





455
720 1
2
Figure 7.30
TEMP ERATURE SENSORS
7.28
The TMP03/TMP04 out put is a st r eam of digit al pulses, and t he t emper at ur e
infor mat ion is cont ained in t he mar k-space r at io per t he equat ions:
Temper at ur e C
T
T
( )
|
.

`
,

235
400 1
2
Temper at ur e F
T
T
( )
|
.

`
,

455
720 1
2
.
Popular micr ocont r oller s, such as t he 80C51 and 68HC11, have on-chip t imer s
which can easily decode t he mar k-space r at io of t he TMP03/TMP04. A t ypical
int er face t o t he 80C51 is shown in Figur e 7.31. Two t imer s, labeled Timer 0 and
Timer 1 ar e 16 bit s in lengt h. The 80C51's syst em clock, divided by t welve, pr ovides
t he sour ce for t he t imer s. The syst em clock is nor mally der ived fr om a cr yst al
oscillat or , so t iming measur ement s ar e quit e accur at e. Since t he sensor 's out put is
r at iomet r ic, t he act ual clock fr equency is not impor t ant . This feat ur e is impor t ant
because t he micr ocont r oller 's clock fr equency is oft en defined by some ext er nal
t iming const r aint , such as t he ser ial baud r at e.
INTERFACING TMP04 TO A MICROCONTROLLER
CPU
TIMER
CONTROL
OSCILLATOR 12
TIMER 0
TIMER 1
80C51 MICROCONTROLLER
TMP04
OUT
V+
GND
+5V
NOTE: ADDITIONAL
PINS OMITTED
FOR CLARITY
XTAL
P1.0
0.1F
Figure 7.31
Soft war e for t he sensor int er face is st r aight for war d. The micr ocont r oller simply
monit or s I/O por t P1.0, and st ar t s Timer 0 on t he r ising edge of t he sensor out put .
The micr ocont r oller cont inues t o monit or P1.0, st opping Timer 0 and st ar t ing Timer
1 when t he sensor out put goes low. When t he out put r et ur ns high, t he sensor 's T1
and T2 t imes ar e cont ained in r egist er s Timer 0 and Timer 1, r espect ively. Fur t her
soft war e r out ines can t hen apply t he conver sion fact or shown in t he equat ions above
and calculat e t he t emper at ur e.
TEMP ERATURE SENSORS
7.29
The TMP03/TMP04 ar e ideal for monit or ing t he t her mal envir onment wit hin
elect r onic equipment . For example, t he sur face mount ed package will accur at ely
r eflect t he t her mal condit ions which affect near by int egr at ed cir cuit s. The TO-92
package, on t he ot her hand, can be mount ed above t he sur face of t he boar d t o
measur e t he t emper at ur e of t he air flowing over t he boar d.
The TMP03 and TMP04 measur e and conver t t he t emper at ur e at t he sur face of
t heir own semiconduct or chip. When t hey ar e used t o measur e t he t emper at ur e of a
near by heat sour ce, t he t her mal impedance bet ween t he heat sour ce and t he sensor
must be consider ed. Oft en, a t her mocouple or ot her t emper at ur e sensor is used t o
measur e t he t emper at ur e of t he sour ce, while t he TMP03/TMP04 t emper at ur e is
monit or ed by measur ing T1 and T2. Once t he t her mal impedance is det er mined, t he
t emper at ur e of t he heat sour ce can be infer r ed fr om t he TMP03/TMP04 out put .
One example of using t he TMP04 t o monit or a high power dissipat ion
micr opr ocessor or ot her IC is shown in Figur e 7.32. The TMP04, in a sur face mount
package, is mount ed dir ect ly beneat h t he micr opr ocessor 's pin gr id ar r ay (PGA)
package. In a t ypical applicat ion, t he TMP04's out put would be connect ed t o an
ASIC wher e t he mar k-space r at io would be measur ed. The TMP04 pulse out put
pr ovides a significant advant age in t his applicat ion because it pr oduces a linear
t emper at ur e out put , while needing only one I/O pin and wit hout r equir ing an ADC.
MONITORING HIGH POWER MICROPROCESSOR
OR DSP WITH TMP04
FAST MICROPROCESSOR, DSP, ETC.,
IN PGA PACKAGE
PGA SOCKET
PC BOARD
TMP04 IN SURFACE
MOUNT PACKAGE
Figure 7.32
Th er most a t i c Swi t ch es a n d Set p oi n t Con t r oller s
Temper at ur e sensor s used in conjunct ion wit h compar at or s can act as t her most at ic
swit ches. ICs such as t he ADT05 accomplish t his funct ion at low cost and allow a
single ext er nal r esist or t o pr ogr am t he set point t o 2C accur acy over a r ange of
40C t o +150C (see Figur e 7.33). The device asser t s an open collect or out put when
t he ambient t emper at ur e exceeds t he user -pr ogr ammed set point t emper at ur e. The
ADT05 has appr oximat ely 4C of hyst er esis which pr event s r apid t her mal on/off
cycling. The ADT05 is designed t o oper at e on a single supply volt age fr om +2.7V t o
TEMP ERATURE SENSORS
7.30
+7.0V facilit at ing oper at ion in bat t er y power ed applicat ions as well as indust r ial
cont r ol syst ems. Because of low power dissipat ion (200W @3.3V), self-heat ing
er r or s ar e minimized, and bat t er y life is maximized. An opt ional int er nal 200k
pull-up r esist or is included t o facilit at e dr iving light loads such as CMOS input s.
The set point r esist or is det er mined by t he equat ion:
R
SET
M C
T
SET
C C
k
+

39
281 6
90 3

( ) .
. .
The set point r esist or should be connect ed dir ect ly bet ween t he R
SET
pin (Pin 4) and
t he GND pin (Pin 5). If a gr ound plane is used, t he r esist or may be connect ed
dir ect ly t o t his plane at t he closest available point .
The set point r esist or can be of near ly any r esist or t ype, but it s init ial t oler ance and
t her mal dr ift will affect t he accur acy of t he pr ogr ammed swit ching t emper at ur e. For
most applicat ions, a 1% met al-film r esist or will pr ovide t he best t r adeoff bet ween
cost and accur acy. Once R
SET
has been calculat ed, it may be found t hat t he
calculat ed value does not agr ee wit h r eadily available st andar d r esist or s of t he
chosen t oler ance. In or der t o achieve a value as close as possible t o t he calculat ed
value, a compound r esist or can be const r uct ed by connect ing t wo r esist or s in ser ies
or par allel.
ADT05 THERMOSTATIC SWITCH
n 2C Setpoint Accuracy
n 4C Preset Hysteresis
n Specified Operating Range: 40C to + 150C
n Power Dissipation: 200W @ 3.3V
SET-
POINT
TEMP
SENSOR
200k
R
SET
+V
S
= 2.7V TO 7V
OUT
R
PULL-UP
ADT05
SOT-23-5
0.1F
Figure 7.33
TEMP ERATURE SENSORS
7.31
The TMP01 is a dual set point t emper at ur e cont r oller which also gener at es a PTAT
out put volt age (see Figur e 7.34 and 7.35). It also gener at es a cont r ol signal fr om one
of t wo out put s when t he device is eit her above or below a specific t emper at ur e
r ange. Bot h t he high/low t emper at ur e t r ip point s and hyst er esis band ar e
det er mined by user -select ed ext er nal r esist or s.
TMP01 PROGRAMMABLE SETPOINT CONTROLLER
VPTAT
+

TEMPERATURE
SENSOR AND
VOLTAGE
REFERENCE
+

HYSTERESIS
GENERATOR
OVER
UNDER
V+
2.5V
VREF
SET
HIGH
SET
LOW
R1
R2
R3
GND
WINDOW
COMPARATOR
TMP01
Figure 7.34
The TMP01 consist s of a bandgap volt age r efer ence combined wit h a pair of mat ched
compar at or s. The r efer ence pr ovides bot h a const ant 2.5V out put and a PTAT
out put volt age which has a pr ecise t emper at ur e coefficient of 5mV/K and is 1.49V
(nominal) at +25C. The compar at or s compar e VPTAT wit h t he ext er nally set
t emper at ur e t r ip point s and gener at e an open-collect or out put signal when one of
t heir r espect ive t hr esholds has been exceeded.
Hyst er esis is also pr ogr ammed by t he ext er nal r esist or chain and is det er mined by
t he t ot al cur r ent dr awn out of t he 2.5V r efer ence. This cur r ent is mir r or ed and used
t o gener at e a hyst er esis offset volt age of t he appr opr iat e polar it y aft er a compar at or
has been t r ipped. The compar at or s ar e connect ed in par allel, which guar ant ees t hat
t her e is no hyst er esis over lap and eliminat es er r at ic t r ansit ions bet ween adjacent
t r ip zones.
TEMP ERATURE SENSORS
7.32
The TMP01 ut ilizes laser t r immed t hin-film r esist or s t o maint ain a t ypical
t emper at ur e accur acy of t1C over t he r at ed t emper at ur e r ange. The open-collect or
out put s ar e capable of sinking 20mA, enabling t he TMP01 t o dr ive cont r ol r elays
dir ect ly. Oper at ing fr om a +5V supply, quiescent cur r ent is only 500A maximum.
TMP01 SETPOINT CONTROLLER KEY FEATURES
n V
C
: 4.5 to 13.2V
n Temperature Output: VPTAT, +5mV/K
n Nominal 1.49V Output @ 25C
n 1C Typical Accuracy Over Temperature
n Specified Operating Range: 55C to + 125C
n Resistor-Programmable Hysteresis
n Resistor-Programmable Setpoints
n Precision 2.5V 8mV Reference
n 400A Quiescent Current, 1A in Shutdown
n Packages: 8-Pin Dip, 8-Pin SOIC, 8-Pin TO-99
n Other Setpoint Controllers:
u Dual Setpoint Controllers: ADT22/ADT23
(3V Versions of TMP01 with Internal Hysteresis)
u Quad Setpoint Controller: ADT14
Figure 7.35
The ADT22/23-ser ies ar e similar t o t he TMP01 but have int er nal hyst er esis and ar e
designed t o oper at e on a 3V supply. A quad (ADT14) set point cont r oller is also
available.
ADCs Wi t h On -Ch i p Temp er a t u r e Sen sor s
The AD7816/7817/7818-ser ies digit al t emper at ur e sensor s have on-boar d
t emper at ur e sensor s whose out put s ar e digit ized by a 10-bit 9s conver sion t ime
swit ched capacit or SAR ADC. The ser ial int er face is compat ible wit h t he Int el 8051,
Mot or ola SPI and QSPI, and Nat ional Semiconduct or 's MICROWIRE
pr ot ocol. The device family offer s a var iet y of input opt ions for fur t her flexibilit y.
The AD7416/7417/7418 ar e similar but have st andar d ser ial int er faces. Funct ional
block diagr ams of t he AD7816, AD7817, and AD7818 ar e shown in Figur es 7.36, 37,
and 38, and key specificat ions in Figur e 7.39
TEMP ERATURE SENSORS
7.33
AD7816 10-BIT DIGITAL TEMPERATURE SENSOR
WITH SERIAL INTERFACE
2.5V
REF
10-BIT
CHARGE
REDISTRIBUTION
SAR ADC
TEMP
SENSOR
OVER TEMP
REGISTER
A > B
CLOCK
+V
DD
= 2.7V TO 5.5V
OTI
SCLK
D
IN/OUT
AGND
RD/WR
CONVST
MUX
REF
IN
CONTROL
REGISTER
OUTPUT
REGISTER
AD7816
Figure 7.36
AD7817 10-BIT MUXED INPUT ADC WITH TEMP SENSOR
2.5V
REF
10-BIT
CHARGE
REDISTRIBUTION
SAR ADC
TEMP
SENSOR
OVER TEMP
REGISTER
CONTROL
REGISTER
A > B
CLOCK
+V
DD
= 2.7V TO 5.5V
OTI
SCLK
D
OUT
AGND
RD/WR
CONVST
MUX
REF
IN
DGND BUSY
V
IN1
V
IN2
V
IN3
V
IN4
CS
OUTPUT
REGISTER
D
IN
AD7817
Figure 7.37
TEMP ERATURE SENSORS
7.34
AD7818 SINGLE INPUT 10-BIT ADC WITH TEMP SENSOR
2.5V
REF
10-BIT
CHARGE
REDISTRIBUTION
SAR ADC
TEMP
SENSOR
OVER TEMP
REGISTER
A > B
CLOCK
+V
DD
= 2.7V TO 5.5V
OTI
SCLK
AGND CONVST
MUX
CONTROL
REGISTER
OUTPUT
REGISTER
V
IN1
D
IN/OUT
RD/WR
AD7818
Figure 7.38
AD7816/7817/7818 - SERIES TEMP SENSOR
10-BIT ADCs WITH SERIAL INTERFACE
n 10-Bit ADC with 9s Conversion Time
n Flexible Serial Interface (Intel 8051, Motorola SPI and QSPI,
National MICROWIRE)
n On-Chip Temperature Sensor: 55C to +125C
n Temperature Accuracy: 2C from 40C to +85C
n On-Chip Voltage Reference: 2.5V 1%
n +2.7V to +5.5V Power Supply
n 4W Power Dissipation at 10Hz Sampling Rate
n Auto Power Down after Conversion
n Over-Temp Interrupt Output
n Four Single-Ended Analog Input Channels: AD7817
n One Single-Ended Analog Input Channel: AD7818
n AD7416/7417/7418: Similar, but have I
2
C Compatible Interface
Figure 7.39
TEMP ERATURE SENSORS
7.35
MI CROP ROCESSOR TEMP ERATURE MONI TORI NG
Today's comput er s r equir e t hat har dwar e as well as soft war e oper at e pr oper ly, in
spit e of t he many t hings t hat can cause a syst em cr ash or lockup. The pur pose of
har dwar e monit or ing is t o monit or t he cr it ical it ems in a comput ing syst em and t ake
cor r ect ive act ion should pr oblems occur .
Micr opr ocessor supply volt age and t emper at ur e ar e t wo cr it ical par amet er s. If t he
supply volt age dr ops below a specified minimum level, fur t her oper at ions should be
halt ed unt il t he volt age r et ur ns t o accept able levels. In some cases, it is desir able t o
r eset t he micr opr ocessor under "br ownout " condit ions. It is also common pr act ice t o
r eset t he micr opr ocessor on power -up or power -down. Swit ching t o a bat t er y backup
may be r equir ed if t he supply volt age is low.
Under low volt age condit ions it is mandat or y t o inhibit t he micr opr ocessor fr om
wr it ing t o ext er nal CMOS memor y by inhibit ing t he Chip Enable signal t o t he
ext er nal memor y.
Many micr opr ocessor s can be pr ogr ammed t o per iodically out put a "wat chdog"
signal. Monit or ing t his signal gives an indicat ion t hat t he pr ocessor and it s soft war e
ar e funct ioning pr oper ly and t hat t he pr ocessor is not st uck in an endless loop.
The need for har dwar e monit or ing has r esult ed in a number of ICs, t r adit ionally
called "micr opr ocessor super visor y pr oduct s," which per for m some or all of t he above
funct ions. These devices r ange fr om simple manual r eset gener at or s (wit h
debouncing) t o complet e micr ocont r oller -based monit or ing sub-syst ems wit h on-chip
t emper at ur e sensor s and ADCs. Analog Devices' ADM-family of pr oduct s is
specifically t o per for m t he var ious micr opr ocessor super visor y funct ions r equir ed in
differ ent syst ems.
CPU t emper at ur e is cr it ically impor t ant in t he Pent ium II micr opr ocessor s. For t his
r eason, all new Pent ium II devices have an on-chip subst r at e PNP t r ansist or which
is designed t o monit or t he act ual chip t emper at ur e. The collect or of t he subst r at e
PNP is connect ed t o t he subst r at e, and t he base and emit t er ar e br ought out on t wo
separ at e pins of t he Pent ium II.
The ADM1021 Micr opr ocessor Temper at ur e Monit or is specifically designed t o
pr ocess t hese out put s and conver t t he volt age int o a digit al wor d r epr esent ing t he
chip t emper at ur e. The simplified analog signal pr ocessing por t ion of t he ADM1021
is shown in Figur e 7.40.
The t echnique used t o measur e t he t emper at ur e is ident ical t o t he "V
BE
" pr inciple
pr eviously discussed. Two differ ent cur r ent s (I and NI)ar e applied t o t he sensing
t r ansist or , and t he volt age measur ed for each. In t he ADM1021, t he nominal
cur r ent s ar e I = 6A, (N = 17), NI = 102A. The change in t he base-emit t er volt age,
V
BE
, is a PTAT volt age and given by t he equat ion:
V
BE
kT
q
N ln( ) .
TEMP ERATURE SENSORS
7.36
Figur e 7.40 shows t he ext er nal sensor as a subst r at e t r ansist or , pr ovided for
t emper at ur e monit or ing in t he micr opr ocessor , but it could equally well be a discr et e
t r ansist or . If a discr et e t r ansist or is used, t he collect or should be connect ed t o t he
base and not gr ounded. To pr event gr ound noise int er fer ing wit h t he measur ement ,
t he mor e negat ive t er minal of t he sensor is not r efer enced t o gr ound, but is biased
above gr ound by an int er nal diode. If t he sensor is oper at ing in a noisy envir onment ,
C may be opt ionally added as a noise filt er . It s value is t ypically 2200pF, but should
be no mor e t han 3000pF.
ADM1021 MICROPROCESSOR TEMPERATURE MONITOR
INPUT SIGNAL CONDITIONING CIRCUITS
65kHz
LOWPASS
FILTER
OSCILLATOR
CHOPPER
AMPLIFIER
AND RECTIFIER
TO ADC
GAIN
=G
I N I
V
OUT
V
OUT
= G
kT
q
ln N
P
REMOTE
SENSING
TRANSISTOR
SPNP
I
BIAS
BIAS
DIODE
C
V
DD
= +3V TO +5.5V
kT
q
ln N V
BE
=
D+
D
Figure 7.40
To measur e V
BE
, t he sensing t r ansist or is swit ched bet ween oper at ing cur r ent s of
I and NI. The r esult ing wavefor m is passed t hr ough a 65kHz lowpass filt er t o
r emove noise, t hen t o a chopper -st abilized amplifier which per for ms t he funct ion of
amplificat ion and synchr onous r ect ificat ion. The r esult ing DC volt age is pr opor t ional
t o V
BE
and is digit ized by an 8-bit ADC. To fur t her r educe t he effect s of noise,
digit al filt er ing is per for med by aver aging t he r esult s of 16 measur ement cycles.
TEMP ERATURE SENSORS
7.37
In addit ion, t he ADM1021 cont ains an on-chip t emper at ur e sensor , and it s signal
condit ioning and measur ement is per for med in t he same manner .
One LSB of t he ADC cor r esponds t o 1C, so t he ADC can t heor et ically measur e fr om
128C t o +127C, alt hough t he pr act ical lowest value is limit ed t o 65C due t o
device maximum r at ings. The r esult s of t he local and r emot e t emper at ur e
measur ement s ar e st or ed in t he local and r emot e t emper at ur e value r egist er s, and
ar e compar ed wit h limit s pr ogr ammed int o t he local and r emot e high and low limit
r egist er s as shown in Figur e 7.41. An ALERT out put signals when t he on-chip or
r emot e t emper at ur e is out of r ange. This out put can be used as an int er r upt , or as
an SMBus aler t .
The limit r egist er s can be pr ogr ammed, and t he device cont r olled and configur ed, via
t he ser ial Syst em Management Bus (SMBus). The cont ent s of any r egist er can also
be r ead back by t he SMBus. Cont r ol and configur at ion funct ions consist of:
swit ching t he device bet ween nor mal oper at ion and st andby mode, masking or
enabling t he ALERT out put , and select ing t he conver sion r at e which can be set
fr om 0.0625Hz t o 8Hz.
STATUS
REGISTER
ADM1021 SIMPLIFIED BLOCK DIAGRAM
ADDRESS POINTER
REGISTER
ONE-SHOT
REGISTER
CONVERSION RATE
REGISTER
LOCAL TEMPERATURE
LOW LIMIT REGISTER
LOCAL TEMPERATURE
HIGH LIMIT REGISTER
REMOTE TEMPERATURE
LOW LIMIT REGISTER
REMOTE TEMPERATURE
HIGH LIMIT REGISTER
CONFIGURATION
REGISTER
INTERRUPT
MASKING
SMBUS INTERFACE
LOCAL TEMPERATURE
LOW LIMIT COMPARATOR
LOCAL TEMPERATURE
HIGH LIMIT COMPARATOR
REMOTE TEMPERATURE
LOW LIMIT COMPARATOR
REMOTE TEMPERATURE
HIGH LIMIT COMPARATOR
LOCAL TEMPERATURE
VALUE REGISTER
REMOTE TEMPERATURE
VALUE REGISTER
SIGNAL CONDITIONING
AND ANALOG MUX
8-BIT
ADC
TEMP
SENSOR
D+
D
TEST V
DD
NC GND GND NC NC TEST SDATA SCLK ADD0 ADD1
STBY
ALERT
RUN/STANDBY
B
U
S
Y
EXTERNAL DIODE OPEN CIRCUIT
Figure 7.41
TEMP ERATURE SENSORS
7.38
ADM1021 KEY SPECIFICATIONS
n On-Chip and Remote Temperature Sensing
n 1C Accuracy for On-Chip Sensor
n 3C Accuracy for Remote Sensor
n Programmable Over / Under Temperature Limits
n 2-Wire SMBus Serial Interface
n 70A Max Operating Current
n 3A Standby Current
n +3V to +5.5V Supplies
n 16-Pin QSOP Package
Figure 7.42
TEMP ERATURE SENSORS
7.39
REF ERENCES
1. Ramon Pallas-Ar eny and J ohn G. Webst er , Sen sor s a n d Si gn a l
Con d i t i on i n g, J ohn Wiley, New Yor k, 1991.
2. Dan Sheingold, Edit or , Tr a n sd u cer I n t er fa ci n g Ha n d b ook , Analog
Devices, Inc., 1980.
3. Walt Kest er , Edit or , 1992 Amp li fi er Ap p li ca t i on s Gu i d e, Sect ion 2, 3,
Analog Devices, Inc., 1992.
4. Walt Kest er , Edit or , Syst em Ap p li ca t i on s Gu i d e, Sect ion 1, 6, Analog
Devices, Inc., 1993.
5. J im Williams, Thermocouple Measurement, Li n ea r Tech n ology
Ap p li ca t i on Not e 28, Linear Technology Cor por at ion.
6. Dan Sheingold, Non li n ea r Ci r cu i t s Ha n d b ook , Analog Devices, Inc.
7. J ames Wong, Temperature Measurements Gain from Advances in High-
precision Op Amps, Elect r on i c Desi gn , 15 May 1986.
8. OMEGA Temperature Measurement Handbook, Omega Inst r ument s, Inc.
9. Ha n d b ook of Ch emi st r y a n d P h ysi cs, Chemical Rubber Co.
10. Paul Br okaw, A S imple Three-Terminal IC Bandgap Voltage Reference,
I EEE J ou r n a l of Soli d St a t e Ci r cu i t s, Vol. SC-9, December , 1974.