Professional Documents
Culture Documents
Switching Diodes Tape and Reel Specifications and Packaging Specifications Surface Mount Information Package Outline Dimensions Reliability and Quality Assurance Replacement Devices Alphanumeric Index
1 2 3 4 5 6 7 8 9 10 11
TMOS is a registered trademark of Motorola Inc. HDTMOS and GreenLine are trademarks of Motorola Inc. Thermal Clad is a trademark of the Bergquist Company.
Motorola, Inc. 1997 Previous Edition 1994 Printed in U.S.A. All Rights Reserved
ii
Products designated as Not Recommended for New Design may become obsolete as dictated by poor market acceptance, or a technology or package that is reaching the end of its life cycle. Devices in this category have an uncertain future and do not represent a good selection for new device designs or long term usage.
All Not Recommended for New Design devices have been removed from the data book. In the event the device you need is no longer found within an appropriate section of the data book, refer to the Replacement Devices index at the back of the book to see if there is a Replacement Part for the device in question.
iii
Table of Contents
Selector Guide . . . . . . . . . . . . . . . . . . . . . 11
Bipolar Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 PlasticEncapsulated Transistors . . . . . . . . . . . . . . . . 12 PlasticEncapsulated Multiple Transistors . . . . . . . . . 18 PlasticEncapsulated Surface Mount Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110 FieldEffect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . 118 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118 TMOS FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120 Surface Mount FETs . . . . . . . . . . . . . . . . . . . . . . . . . . 121 Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . . . 123 Tuning Diodes Abrupt Junction . . . . . . . . . . . . . . . 123 Tuning Diodes HyperAbrupt Junction . . . . . . . . 126 Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129 Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 Multiple Switching Diodes . . . . . . . . . . . . . . . . . . . . . . 135 GreenLine Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . 136 Small Signal MultiIntegrated Devices . . . . . . . . . . . 138
PlasticEncapsulated Transistors . . . 21
Embossed Tape and Reel . . . . . . . . . . . . . . . . . . . . . . . . . Radial Tape in Fan Fold Box or Reel . . . . . . . . . . . . . . . . Device Markings/Date Code Characters . . . . . . . . . . . . . Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 22 22 23
GreenLine Portfolio . . . . . . . . . . . . . . . 31
Data Sheets . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
iv
Section 1
Selector Guide
In Brief . . .
This selector guide highlights semiconductors that are the most popular and have a history of high usage for the most applications. A large selection of encapsulated plastic transistors, FETs and diodes are available for surface mount and insertion assembly technology. Plastic packages include TO-92 (TO226AA), 1-Watt TO-92 (TO226AE), SOT-23, SC-70/SOT-323, SC90/SOT416, SC-59, SOD-123, SOT223, SOT363, and TSOP6. Plastic multiples are available in 14pin and 16pin dualinline packages for insertion applications: SO14 and SO16 for surface mount applications.
Selector Guide 11
Bipolar Transistors
CASE 2905 TO226AE 1WATT (TO92)
PlasticEncapsulated Transistors
Motorolas Small Signal TO226 plastic transistors encompass hundreds of devices with a wide variety of characteristics for generalpurpose, amplifier and switching applications. The popular highvolume package combines proven reliability, performance, economy and convenience to provide the perfect solution for industrial and consumer design problems. All devices are laser marked for ease of identification and shipped in antistatic containers, as part of Motorolas ongoing practice of maintaining the highest standards of quality and reliability.
23
23
Table 1. PlasticEncapsulated GeneralPurpose Transistors These generalpurpose transistors are designed for smallsignal amplification from dc to low ratio frequencies. They are also useful as oscillators and generalpurpose switches. Complementary devices shown where available (Tables 14).
V(BR)CEO Volts Min fT @ IC MHz Min mA IC mA Max hFE @ IC Min Max mA NF dB Max
NPN
PNP
Style
MPS8599 MPSA56 BC556 BC556B MPSA55 MPS2907A BC212 BC307B BC327 BC557 BC557A BC557B BC557C MPSA70 2N4403 2N4402 MPS6652 2N3905 2N3906 BC558B 2N4125 BC328
80 80 80 65 65 60 60 50 45 45 45 45 45 45 40 40 40 40 40 40 40 30 30 30 30 30 25 25
150 100 60 150 150 100 200 200(1) 150 210(1) 150 150 150 150 125 300 200 150 100 200 250 300(1) 300(1) 300(1) 300 200 250 210(1)
10 10 10 10 10 10 50 10 10 10 10 10 10 10 5.0 20 20 20 50 10 10 10 10 10 10 10 10 10
500 500 250 100 100 500 600 100 100 800 100 100 100 100 100 600 600 600 1000 200 200 100 100 100 100 200 200 800
100 100 60 120 180 100 100 120 200 100 120 120 180 380 40 100 100 50 50 50 100 110 120 200 420 50 120 100
300 400 450 450 300 500 460 630 800 220 450 800 400 300 300 150 150 300 800 220 450 800 150 360 630
1.0 100 10 2.0 2.0 100 150 2.0 2.0 100 2.0 2.0 2.0 2.0 5.0 150 150 150 500 10 10 2.0 2.0 2.0 2.0 2.0 2.0 100
1 1 1 17 17 1 1 14 17 17 17 17 17 17 1 1 1 1 1 1 1 17 17 17 17 1 1 17
Selector Guide 12
NPN
PNP
Table 2. PlasticEncapsulated LowNoise and Good hFE Linearity These devices are designed to use on applications where good hFE linearity and lownoise characteristics are required: Instrumentation, hifi preamplifier.
hFE @ IC V(BR)CEO Volts Min Max mA VT(4) mV Typ NF(5) dB Max fT MHz Typ
NPN
PNP
Style
MPS6521
(1) (2) (4) (5) (7) (8)
50 50 45 45 45 45 40 40 30 30 30 25 25
250 250 120 180 380 500 100 250 200 380 350 450 300
0.1 0.1 2.0 2.0 2.0 1.0 10 10 2.0 2.0 1.0 1.0 2.0
2.0 3.5(8) 2.0(1) 2.5 2.5 5.0 2.0 2.5 2.5 3.0 2.0 3.0
1 1 17 17 17 1 1 1 17 17 1 1 1
Typical Min VT : Total Input Noise Voltage (see BC413/BC414 and BC415/BC416 Data Sheets) at RS = 2.0 k , IC = 200 A, VCE = 5.0 Volts. NF: Noise Figure at RS = 2.0 k, IC = 200 A, VCE = 5.0 Volts. f = 30 Hz to 15 kHz. RS = 10 k , BW = 1.0 Hz, f = 100 MHz RS = 500 , BW = 1.0 Hz, f = 10 MHz
Selector Guide 13
Table 4. PlasticEncapsulated HighCurrent Transistors The following table is a listing of devices that are capable of handling a higher current range for smallsignal transistors.
V(BR)CEO Volts Min fT @ IC MHz Min mA IC mA Max hFE @ IC Min Max mA VCE(sat) @ IC & IB Volts Max mA mA Style
NPN
PNP
80 80 60 40 20
200/150(1) 60 75 75 65
50 10 50 50 10
60 40 75 75 60
400 160
17 14 1 1 1
Selector Guide 14
Selector Guide 15
Device Type
f MHz
Style
25 18 12
35 28 18
10 300 10
15 15 15
40 30 40
10 30 10
10 30 10
300 350
10 30
1 1 1
Selector Guide 16
Table 9. PlasticEncapsulated Telecom Transistors These devices are special product ranges intended for use in telecom applications.
PD mW 25C Amb IC mA Cont hFE @ IC @ VCE Min Max mA Volts fT MHz Min Style
Device Type
V(BR)CEO Volts
60
625
600
100
10
10
200
17
Selector Guide 17
Specification Tables The following short form specifications include Quad and Dual transistors listed in alphanumeric order. Some columns denote two different types of data indicated by either bold or italic typeface. See key and headings for proper identification. This applies to Table 10 and 11 of this section only.
KEY
Ref. Point Subscript Unit
TYPE NO.
Alphanumeric listing type numbers Identification Code
ID
VBE mV Max
Gp dB Min
NF @ dB Max
fT MHz Min
Cob pF Max
ton ns Max
toff ns Max
IC IB
& IC Unit
First Letter: Polarity C both types in multiple device N NPN P PNP Second Letter: Use A General Purpose Amplifier E Low Noise Audio Amplifier F Low Noise RF Amplifier G General Purpose Amplifier and Switch H Tuned RF/IF Amplifier M Differential Amplifier S High Speed Switch D Darlington
Gp Power Gain NF Noise Figure f Test Frequency AUD 1015 kHz Frequency Units: H Hertz M MHz K kHz G GHz VCE(sat) CollectorEmitter Saturation Voltage IC Test Current Current Units: u A m mA A Amp hFE1/hFE2 Current Gain Ratio VBE Differential Base Voltage |VBE1 VBE2|. Differential Amplifiers ton turnon time toff turnoff time
CurrentGainBandwidth Product
Power Dissipation specified at 25C. Single die rating. Ref. Point: A Ambient Temperature C Case Temperature
Rated Minimum CollectorEmitter Voltage Subscript letter identifies base termination listed below in order of preference. SUBSCRIPT: 0 VCEO, open
Output Capacitance, commonbase. Shown without distinction: Ccb CollectorBase Capacitance Cre CommonEmitter Reverse Transfer Capacitance
Selector Guide 18
Device
ID
ton ns Max
IC IB IC
8.0 25 10 15 4.0 4.0 4.0 4.5 8.0 8.0 4.0 8.0 8.0 4.0 4.5 4.5 5.0 5.0 6.0 5.0
45(1) 40 35 50
180(1) 90 60 120
0.2 0.25 0.4 0.4 1.5 0.4 0.25 0.25 0.15 0.5 0.5 0.7 0.5
Table 11. PlasticEncapsulated Multiple Transistors Quad Surface Mount The following table is a listing of the most popular multiple devices available in the plastic SOIC surface mount package. These devices are available in NPN, PNP, and NPN/PNP configurations.
hFE @ IC Device V(BR)CEO V(BR)CBO Min mA MHz Min fT @ IC mA
(1) Typical (12) NPN/PNP NOTE: Some columns show 2 different types of data indicated by either bold or italic typefaces. See key and headings.
Selector Guide 19
This section of the selector guide lists the smallsignal plastic devices that are available for surface mount applications. These devices are encapsulated with the latest stateoftheart mold compounds that enhance reliability and exhibit excellent performance in high temperature and high humidity environments. This package offers higher power dissipation capability for smallsignal applications.
3 4 1 2
Table 12. PlasticEncapsulated Surface Mount GeneralPurpose Transistors The following tables are a listing of smallsignal generalpurpose transistors in the SOT23, SC59, SOT223, SC70, SC90, and SOT363 surface mount packages. These devices are intended for smallsignal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and generalpurpose, low voltage switches. Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending breakdown voltage.
hFE @ IC Device Marking V(BR)CEO Min Max mA fT MHz Min
A2 A3
40 40
100 100
300 300
10 10
250 250
C (OUT)
B (IN)
R1 R2 E (GND)
mA
fT MHz Min
Table 13. PlasticEncapsulated Surface Mount Bias Resistor Transistors Table 13. for General Purpose Applications Pinout: 1Base, 2Emitter, 3Collector These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors.
Device NPN PNP NPN Marking PNP V(BR)CEO Volts (Min) hFE@ IC Min mA IC mA Max R1 Ohm R2 Ohm
R1 Ohm
R2 Ohm
R1 Ohm
R2 Ohm
Table 15. PlasticEncapsulated Surface Mount VHF/UHF Amplifiers, Mixers, Oscillators The following table is a listing of devices intended for smallsignal RF amplifier applications to VHF/UHF frequencies. These devices may also be used as VHF/UHF oscillators and mixers. Pinout: 1Base, 2Emitter, 3Collector
Device Marking V(BR)CEO ( ) Ccb(13) pF Max f T @ IC GHz Min mA
EC
20
0.15
1.0
Table 17. PlasticEncapsulated Surface Mount Darlingtons The following table is a listing of smallsignal devices that have very high hFE and input impedance characteristics. These devices utilize monolithic, cascade transistor construction. Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of descending hFE.
VCE(sat) Volts Max hFE @ IC Min Max mA
Device
Marking
V(BR)CES
Table 18. PlasticEncapsulated Surface Mount LowNoise Transistors The following table is a listing of smallsignal devices intended for low noise applications in the audio range. These devices exhibit good linearity and are candidates for hifi and instrumentation equipment. Pinout: 1Base, 2Emitter, 3Collector Devices are listed in order of ascending NF.
NF dB Typ hFE@ IC V(BR)CEO Min Max mA fT MHz Min
Device
Marking
2Q
2.0(15)
50
250
10
40
Table 20. PlasticEncapsulated Surface Mount Drivers The following is a listing of smallsignal devices intended for medium voltage driver applications at fairly high current levels. Pinout: 1Base, 2Emitter, 3Collector
hFE@ IC Device Marking V(BR)CEO VCE(sat) VBE(sat) Min Max mA
The following devices are designed to conserve energy. They offer ultralow collector saturation voltage. Case 31808 TO236AB (SOT23) PNP
MMBT1010LT1
GLP 15 0.1 1.1 300 600 100
Table 21. PlasticEncapsulated Surface Mount General Purpose Amplifiers Pinout: 1Base, 2Collector, 3Emitter, 4Collector
hFE@ IC Device Marking V(BR)CEO Min Max mA
Table 23. PlasticEncapsulated Surface Mount Darlingtons Pinout: 1Base, 2Collector, 3Emitter, 4Collector
VCE(sat) Max (V) hFE Min Max @ IC (mA)
Device
Marking
V(BR)CER
Table 24. PlasticEncapsulated Surface Mount HighVoltage Transistors Pinout: 1Base, 2Collector, 3Emitter, 4Collector
hFE Device Marking V(BR)CEO Min Max @ IC (mA) fT Min (MHz)
Table 25. PlasticEncapsulated Surface Mount High Current Transistors Pinout: 1Base, 2Collector, 3Emitter, 4Collector
Device Marking V(BR)CEO VCE(sat) Volts hFE@ IC Min Max mA
FieldEffect Transistors
JFETs
JFETs operate in the depletion mode. They are available in both P and Nchannel and are offered in both Throughhole and Surface Mount packages. Applications include general purpose amplifiers, switches and choppers, and RF amplifiers and mixers. These devices are economical and very rugged. The drain and source are interchangeable on many typical FETs.
1 CASE 2904 TO226AA (TO92)
23
Table 26. JFET LowFrequency/LowNoise The following table is a listing of smallsignal JFETs intended for lownoise applications in the audio range. These devices exhibit good linearity and are candidates for hifi and instrumentation equipment.
Re Yfs Device mmho Min @f Re Yos @ f mho Max kHz V(BR)GSS V(BR)GDO Volts Min VGS(off) Volts Min Max Min IDSS mA Max Style
kHz
Ciss pF Max
Crss pF Max
Table 27. JFET HighFrequency Amplifiers The following is a listing of smallsignal JFETs that are intended for hifrequency applications. These are candidates for VHF/UHF oscillators, mixers and frontend amplifiers.
Re Yfs @ f Device mmho Min MHz Re Yos @ f mho Max MHz NF @ RG = 1K dB Max f MHz V(BR)GSS V(BR)GDO Volts Min VGS(off) Volts Min Max IDSS mA Min Max Style
Ciss pF Max
Crss pF Max
25 25 25 25 25 25 25
20 5.0 10 20 60 30 60
5 5 5 5 5 5 5
JFETs (continued)
Table 28. JFET Switches and Choppers The following is a listing of JFETs intended for switching and chopper applications.
RDS(on) @ ID Device Max mA VGS(off) Volts Min Max Min IDSS mA Max V(BR)GSS V(BR)GDO Volts Min
Ciss pF Max
Crss pF Max
ton ns Max
toff ns Max
Style
1.0 1.0
1.0 0.5
75 30
35 30 30 30 30 25 25
28 10 10 10 10 5.0
15 15 18 10
35 55 45 25
5 5 5 5 5 5 5
TMOS FETs
1 2 3
2 3
G S
Table 29. TMOS Switches and Choppers The following is a listing of smallsignal TMOS devices that are intended for switching and chopper applications. These devices offer low RDS(on) characteristics.
RDS(on) @ ID Device Max A VGS(th) Volts Min Max
Ciss pF Max
Crss pF Max
ton ns Max
toff ns Max
Style
1.0 0.5 0.2 0.5 0.5 0.25 0.5 0.5 0.5 0.2
0.8 0.8 0.8 0.8 0.8 1.0 1.0 0.6 0.8 1.0
2.5 3.0 3.0 2.5 2.0 3.0 2.5 2.5 2.0 3.0
30 10 10 10 8.0 15 20 10 8.0 15
30 10 10 10 23 15 20 10 23 15
22 22 30 22 22 30 22 22 22 30
Table 30. Surface Mount RF JFETs The following is a list of surface mount FETs which are intended for VHF/UHF RF amplifier applications. Pinout: 1Drain, 2Source, 3Gate
NF Device Marking dB Typ f MHz mmhos Min Yfs @ VDS mmhos Max Volts V(BR)GSS Style
M6
2.0
100
4.5
7.5
15
30
Table 31. Surface Mount GeneralPurpose JFETs The following table is a listing of surface mount smallsignal general purpose FETs. These devices are intended for smallsignal amplification for DC, audio, and lower RF frequencies. They also have applications as oscillators and generalpurpose, lowvoltage switches. Pinout: 1Drain, 2Source, 3Gate
Yfs @ VDS Device Marking V(BR)GSS mmhos Min mmhos Max Volts mA Min IDSS mA Max Style
6D
25
1.0
5.0
15
1.0
5.0
Device
Marking
Table 33. TMOS FETs The following is a listing of smallsignal surface mount TMOS FETs which exhibit low RDS(on) characteristics. Pinout: 1Gate, 2Source, 3Drain
RDS(on) @ ID Device Marking Ohm mA VDSS 60 100 50 60 20 20 30 VGS(th) Volts Min Volts Max Switching Time ton ns 10 20 20 20 2.5 2.5 2.5 toff ns 10 40 20 20 15 16 16 Style
2 Cathode STYLE 1
1 Anode
1 2
3 Cathode STYLE 8
1 Anode
Typical Characteristics
Diode Capacitance versus Reverse Voltage
100 70 C T , DIODE CAPACITANCE (pF) 50 30 20 10 7 5 3 2 0.6 1 2 4 6 10 20 VR, REVERSE VOLTAGE (VOLTS) 40 60 1 0.1 TA = 25C f = 1 MHz C T , DIODE CAPACITANCE (pF) 1N5148 1000
MV1638 100
1N5456A MV1650
100
1000 C T , DIODE CAPACITANCE (pF) MV2115 C T , DIODE CAPACITANCE (pF) MV2109 MMBV2109LT1 100
100 70
40
MMBV432LT1 MV104
20
10 0.3
Table 35. GeneralPurpose Glass Abrupt Tuning Diodes High Q Capacitance Ratio @ 2.0 Volts/30 Volts The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit very high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz Device(20) pF Min pF Nominal pF Max VR(BR)R Volts Cap Ratio C2/C30 Min Q 4.0 V, 50 MHz Min
16.2 19.8 90
18 22 100
30 30 30
Table 36. GeneralPurpose Glass Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/20 Volts The following is a listing of axial leaded, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz Device pF Min pF Nominal pF Max V(BR)R Volts Cap Ratio C2/C20 Min Q 4.0 V, 50 MHz Typ
Table 37. GeneralPurpose Plastic Abrupt Tuning Diodes Capacitance Ratio @ 2.0 Volts/30 Volts The following is a listing of plastic package, generalpurpose, abrupt tuning diodes. These devices exhibit high Q characteristics.
CT @ VR = 4.0 V, 1.0 MHz Device pF Min pF Nominal pF Max VR(BR)R Volts Cap Ratio C4/C30 Min Q 4.0 V, 50 MHz Typ
Table 39. Abrupt Tuning Diodes for FM Radio Dual The following is a listing of abrupt tuning diodes that are available as dual units in a single package.
CT @ VR(22) Device pF Min pF Max Volts Cap Ratio C3/C30 Min Q 3.0 V, 50 MHz Min
V(BR)R Volts
Device Marking
Style
43
48.1
2.0
1.5(21)
100
14
M4B
1 2
2 Anode STYLE 1
1 Cathode
3 1 2
3 Cathode STYLE 8
1 Anode
Typical Characteristics
Diode Capacitance versus Reverse Voltage
20 18 C T , DIODE CAPACITANCE (pF) 16 14 12 10 8 6 4 2 0 TA = 25C f = 1 MHz MMBV105GLT1 C T , CAPACITANCE (pF) 40 36 32 28 24 20 16 12 8 4 0.3 0.5 1 2 3 5 10 20 30 0 1 3 10 30 100 MMBV109LT1 MV209
0.5 1
40 C T , DIODE CAPACITANCE (pF) C T , DIODE CAPACITANCE (pF) 36 32 28 24 20 16 12 8 4 0 0.3 TA = 25C f = 1 MHz MMBV3102LT1
50 40 f = 1 MHz 30 20 10 MMBV609LT1
0.5
10
20
30
10
20
30
40
MV7005T1
1000 C T , DIODE CAPACITANCE (pF) 500 C T , CAPACITANCE (pF) 500 300 200 100 50 30 20 10 1 MV1405 MV1403 MV1404 2 MV7404T1 3 4 5 6 7 8 9 10 TA = 25C f = 1 MHz
100 50
10
Table 42. HyperAbrupt High Capacitance Voltage Variable Diode Surface Mount The following are high capacitance voltage variable diodes intended for low frequency applications and circuits requiring large tuning capacitance.
CT @ f = 1.0 MHz Device V(BR)R Volts IR nA Min pF Max pF Cap Ratio Min Q Min Style CV Curve Figure
Table 43. HyperAbrupt High Capacitance Tuning Diodes Axial Lead Glass Package
CT @ VR Device pF Min pF Max Volts Cap Ratio C2/C10 Min Q 2.0 V, 1.0 MHz Min V(BR)R Volts CV Curve Figure
Style
96 140 200
10 10 10
12 12 12
1 1 1
11 11 11
Schottky Diodes
Schottky diodes are ideal for VHF and UHF mixer and detector applications as well as many higher frequency applications. They provide stable electrical characteristics by eliminating the pointcontact diode presently used in many applications.
1 2
STYLE 8 1 Single 3 1
STYLE 19 2 Series 3
Typical Characteristics
Capacitance versus Reverse Voltage
1 MBD101 MMBD101LT1 MMBD352LT1* MMBD353LT1* MMBD354LT1* TA = 25C C T , CAPACITANCE (pF) 2.8 2.4 2 1.6 1.2 0.8 0.4 0.6 0 0 1 2 3 * EACH DIODE 4 0 5 10 15 20 25 30 35 40 45 50 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) MBD701, MMBD701LT1 MBD301, MMBD301LT1 TA = 25C
C T , CAPACITANCE (pF)
0.9
0.8
0.7
Device
Style
Switching Diodes
Smallsignal switching diodes are intended for low current switching and steering applications. HotCarrier, PIN and generalpurpose diodes allow a wide selection for specific application requirements.
1 CASE 2904 TO226AA (TO92) 2 3 STYLE 3 1 2 CASE 18202 TO226AC (TO92)
Typical Characteristics
Capacitance versus Reverse Voltage
10 C T , DIODE CAPACITANCE (pF) TA = 25C f = 1 MHz
1 3 STYLE 4 1 3
MPN3404 1
1
MMBV3401LT1 20 V MAX VR 12 18 24 30 36
MPN3700 MMBV3700LT1 42 48 54 1
STYLE 8
SINGLE
STYLE 18 2 SINGLE 3
STYLE 19 2 3 SERIES
CASE 46301 SOT416/SC90 1 CATHODE STYLE 4 2 1 ANODE STYLE 5 2 CASE 318D04 SC59
3 2 1 STYLE 2 STYLE 4 3 SINGLE 2 STYLE 4 2 1 3 COMMON ANODE 2 1 3 COMMON CATHODE STYLE 3 2 1 3 COMMON ANODE STYLE 5 2 2 SINGLE 3
Device
Device Marking
Style
Table 46. GeneralPurpose Signal and Switching Diodes Single The following is a listing of smallsignal switching diodes in surface mount packages. These diodes are intended for low current switching and signal steering applications.
V(BR)R Device Marking Min Volts @ IBR (A) Max (A) IR @ VR Volts Min Volts VF Max Volts @ IF (mA) CT(30) Max (pF) trr Max (ns) Case Style
XQ XS
30 30
100 100
0.5 0.5
30 30
0.95 0.95
10 10
2.0 2.0
3000 3000
5 3
14 1
16 1
4
8 Diode Array (Common Anode)
14 2 3 5 7 8 9 11 12 7 6 5
7
4 3 2 1
NC Pin 1, 4, 6, 10, 13
10 11 12 13 14
2
1 1 2 14 3 5 7 8 9 11 12
5
8 2 14 3 11 12 4 5 9 10 7
16 Diode Array
NC Pin 4,6,10,13
NC Pin 6, 13
3
8 Diode Array (Common Cathode)
14 2 3 5 7 8 9 11 12 1 2 3 4
6
5 6 7 8
NC Pin 1, 4, 6, 10, 13
16 15 14 13 12 11 12
1 2
3 2 1
3 1 2
6 1
3
4 2
Small Signal HDTMOS: These devices provide our lowest ever drainsource resistance versus package size. Lower rDS(on) means less wasted energy through dissipation loss, making them especially effective for lowcurrent applications where energy conservation is crucial, such as low current switchmode power supplies, uninterruptable power supplies (UPS), power management systems, and bias switching. This makes them ideal for portable computertype products or any system where the combination of power management and energy conservation is key. Save Energy Save Money In an increasingly powerhungry world, Motorolas GreenLine portfolio makes powerful sense. So much sense that we plan to continue adding devices to the portfolio. Chances are, there are Motorola GreenLine devices applicable to one or more of your products ones that can help save energy, dollars and the environment.
Table 51. Bipolar Driver Transistor PNP These offer ultralow collector saturation voltage. Pinout: 1Base, 2Emitter, 3Collector
hFE@ IC Device Type Marking GLP GLP Case SOT23 SC59 V(BR)CEO 15 15 VCE(sat) 0.1 0.1 VBE(sat) 1.1 1.1 Min 300 300 Max 600 600 mA 100 100
MMBT1010LT1 MSD1010T1
GreenLine (continued)
Table 52. Low Leakage Switching Diodes These offer reverse leakage specifications guaranteed to 500 pA. Versions available in single and dual.
V(BR)R Device Type Marking AY A3 A5 DH DI DP XP XQ XS 4K Case SOT23 SOT23 SOT23 SC70 SC70 SC70 SC59 SC59 SC59 SOD123 Style Single Dual Anode Dual Cathode Single Dual Anode Dual Cathode Single Dual Anode Dual Cathode Single Min Volts 30 30 30 30 30 30 30 30 30 30 @ IBR (A) 100 100 100 100 100 100 100 100 100 100 Max (nA) 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 IR @ VR Volts 30 30 30 30 30 30 30 30 30 30
MMBD1000LT1 MMBD1005LT1 MMBD1010LT1 MMBD2000T1 MMBD2005T1 MMBD2010T1 MMBD3000T1 MMBD3005T1 MMBD3010T1 MMSD1000T1
Table 53. Small Signal HDTMOS MOSFETs These provide the lowest drainsource resistance versus package size.
RDS(on) Max Device Type Marking Channel @Vgs1 (10 V) @Vgs2 (4.5 V) @Vgs3 (2.5 V) VDSS VGS(th) Volts Min Volts Max Switching Time t(on) ns t(off) ns Style
4
1 2
R1
R3 Q2 VENBL (5) R5 R4 Q4 R6
MDC3105LT1
INTERNAL CIRCUIT DIAGRAMS Table 54. Low Voltage Bias Stabilizer A silicon SMALLBLOCK integrated circuit which maintains stable bias current in various discrete bipolar junction and field effect transistors.
VCC (Volts) Device Type Marking Min Max ICC A Vref Volts Vref Volts
Table 55. Integrated Relay/Solenoid Driver Monolithic circuit block to switch 3.0 V to 5.0 V relays. It is intended to replace an array of three to six discrete components.
VCC (Volts) Device Type Min Max Min Vin (Volts) Max Vsat (Volts) Iin (mA) IC(on) (mA)
Section 2
Plastic-Encapsulated Transistors
In Brief . . .
Motorolas plastic transistors and diodes encompass hundreds of devices spanning the gamut from general-purpose amplifiers and switches with a wide variety of characteristics to dedicated special-purpose devices for the most demanding applications. The popular TO-92, 1-Watt TO-92 and TO-116 combine proven reliability performance and economy for through-the-hole manufacturing, while the SOT-23, SC-59, SC-70/SOT-323, SC90/SOT416, SOT-223, and SO-16 offer the same solutions for surface mount manufacturing. As an additional service to our customers Motorola will, upon request, supply many of these devices in tape and reel for automatic insertion. Contact your Motorola representative for ordering information. This section contains both single and multiple plasticencapsulated transistors. NOTE: All SOT-23 package devices have had a T1 suffix NOTE: added to the device title.
3 3 1 2 2 1 1 2 4
3 2
1 2
16 14 1 1
21
SC-59:
SC-70/ SOT-323:
SOT-223:
SO-16:
ABC D
The D represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
22
MOTOROLA
2N3903 2N3904*
*Motorola Preferred Device
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 60 6.0 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS(1)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
23
2N3903 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 2N3903 2N3904 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.2 0.3 Vdc 20 40 35 70 50 100 30 60 15 30 150 300 Vdc
Collector Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 2N3903 2N3904 td tr ts tf 35 35 175 200 50 ns ns ns ns
24
2N3903 2N3904
DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 0 0.5 V < 1 ns CS < 4 pF* 9.1 V < 1 ns 1N916 CS < 4 pF* 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k
TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10
1.0 0.1
0.2 0.3
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 3. Capacitance
25
2N3903 2N3904
500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0 V 50 70 100 200 40 V 15 V 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
100 70 50 30 20 10 7 5 IC/IB = 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA
IC = 0.5 mA IC = 50 mA
f, FREQUENCY (kHz)
Figure 9.
Figure 10.
26
2N3903 2N3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50
h fe , CURRENT GAIN
200
20 10 5
100 70 50
2 1
30
0.1
0.2
0.1
0.2
5.0
10
1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
27
2N3903 2N3904
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C)
1.0
2.0
5.0
10
20
50
100
200
20
40
60
80
100
120
140
160
180 200
28
MOTOROLA
2N3905 2N3906*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 60C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD PD TJ, Tstg Value 40 40 5.0 200 625 5.0 250 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C mW Watts mW/C C
THERMAL CHARACTERISTICS(1)
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. Indicates Data in addition to JEDEC Requirements. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 40 5.0 50 50 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
29
2N3905 2N3906
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) hFE 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 2N3905 2N3906 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.25 0.4 Vdc 30 60 40 80 50 100 30 60 15 30 150 300 Vdc
Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)
mmhos
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc 3 0 Vdc mAdc, IB1 = IB2 = 1.0 mAd ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) 2N3905 2N3906 2N3905 2N3906 td tr ts tf 35 35 200 225 60 75 ns ns ns
Fall Time
ns
210
2N3905 2N3906
3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 1N916 CS < 4 pF* 10 k < 1 ns 275 3V
TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 3.0 2.0 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10
QT QA
1.0 0.1
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
200
Figure 3. Capacitance
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200
100 70 50 30 20 10 7 5 IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
211
2N3905 2N3906
TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA IC = 1.0 mA
4.0
3.0
2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100
1.0
0 0.1
0.1
0.2
40
100
Figure 7.
Figure 8.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20
h fe , DC CURRENT GAIN
200
100 70 50
10 7
30
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
212
2N3905 2N3906
TYPICAL STATIC CHARACTERISTICS
2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
+25C TO +125C
0.6
55C TO +25C
0.2
1.0
2.0
100
200
20
40
160
180 200
213
MOTOROLA
2N4123 2N4124
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N4123 30 40 5.0 200 625 5.0 1.5 12 55 to +150 2N4124 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IE = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. V(BR)CEO 2N4123 2N4124 V(BR)CBO 2N4123 2N4124 V(BR)EBO ICBO IEBO 40 30 5.0 50 50 Vdc nAdc nAdc 30 25 Vdc Vdc
214
2N4123 2N4124
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) hFE 2N4123 2N4124 2N4123 2N4124 VCE(sat) VBE(sat) 50 120 25 60 150 360 0.3 0.95 Vdc Vdc
(IC = 50 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc)
(IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k ohm, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
200 100 70 50 30 20 tf tr td ts
3.0 2.0
Cobo 10.0 7.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200
1.0 0.1
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS)
20 30 40
5.0
Figure 1. Capacitance
215
2N4123 2N4124
AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE (VCE = 5 Vdc, TA = 25C) Bandwidth = 1.0 Hz
12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 200 W IC = 1 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1 k IC = 50 mA NF, NOISE FIGURE (dB) 14 f = 1 kHz 12 10 8 6 4 2 0 0.1 IC = 1 mA IC = 0.5 mA IC = 50 mA IC = 100 mA
0.2
0.4
40
100
h PARAMETERS
(VCE = 10 V, f = 1 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50 20 10 5
200
100 70 50
2 1
0.1
0.2
5.0
10
1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
5.0
10
216
2N4123 2N4124
STATIC CHARACTERISTICS
2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VBE(sat) @ IC/IB = 10
1.2
1.0 0.5 0 0.5 1.0 1.5 2.0 55C to +25C +25C to +125C +25C to +125C
20
40
180 200
217
MOTOROLA
Amplifier Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N4125
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 30 30 4.0 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 30 30 4.0 50 50 Vdc Vdc Vdc nAdc nAdc
REV 2
218
2N4125
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage(1) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 50 25 VCE(sat) VBE(sat) 0.95 0.4 Vdc 150 Vdc
10 7.0
200 100 ts td tr tf
CAPACITANCE (pF)
5.0
70 50 30 20
3.0 2.0
10.0 7.0 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 REVERSE BIAS (VOLTS) 10 20 30 50 5.0 1.0
VCC = 3.0 V IC/IB = 10 VBE(off) = 0.5 V 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 200
Figure 1. Capacitance
219
2N4125
AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 5.0 Vdc, TA = 25C Bandwidth = 1.0 Hz
5.0 4.0 NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 1 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2 k IC = 50 mA 2.0 12 f = 1 kHz 10 IC = 0.5 mA 8.0 6.0 4.0 2.0 0 0.1 IC = 50 mA IC = 100 mA IC = 1 mA
3.0
1.0
SOURCE RESISTANCE = 2 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100
0 0.1
0.2
0.4
40
100
h PARAMETERS
VCE = 10 V, f = 1 kHz, TA = 25C
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 70 50 30 20
100 70 50
10 7.0 5.0 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10
1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
5.0
10
220
2N4125
STATIC CHARACTERISTICS
2.0 h FE, DC CURRENT GAIN (NORMALIZED) TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
0.6
0.4
55C to +25C
0.2
VCE(sat) @ IC/IB = 10
20
40
180 200
221
MOTOROLA
2N4264
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 15 30 6.0 200 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 12 Vdc, VEB(off) = 0.25 Vdc) (VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100C) Collector Cutoff Current (VCE = 12 Vdc, VEB(off) = 0.25 Vdc) V(BR)CEO 15 V(BR)CBO 30 V(BR)EBO 6.0 IBEV ICEX 100 0.1 10 nAdc Adc Vdc Vdc Vdc
REV 2
222
2N4264
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc, TA = 55C) (IC = 30 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc)(1) (IC = 200 mAdc, VCE = 1.0 Vdc)(1) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc)(1) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc)(1) hFE 25 40 20 40 30 20 VCE(sat) VBE(sat) 0.65 0.75 0.8 0.95 0.22 0.35 Vdc 160 Vdc
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time TurnOn Time TurnOff Time Storage Time Total Control Charge ( (VCC = 10 Vdc, VEB(off) = 2.0 Vdc, IC = 100 mAdc, IB1 = 10 mAdc) (Fig. 1, Test Condition C) VCC = 10 Vdc, (IC = 10 mAdc, for ts) (IC = 100 mA for tf) (IB1 = 10 mA) (IB2 = 10 mA) (Fig. 1, Test Condition C) (VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) (Fig. 1, Test Condition A) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Fig. 1, Test Condition A) (VCC = 10 Vdc, IC = 10 mA, IB1 = IB2 = 10 mAdc) (Fig. 1, Test Condition B) (VCC = 3.0 Vdc, IC = 10 mAdc, IB = mAdc) (Fig. 3, Test Condition A) td tr ts tf ton toff ts QT 8.0 15 20 15 25 35 20 80 ns ns ns ns ns ns ns pC
V3 0 V2
223
2N4264
CURRENT GAIN CHARACTERISTICS
100 70 h FE, DC CURRENT GAIN 50 TJ = 125C 25C 30 20 15C 55C 2N4264 VCE = 1 V
10 1.0
2.0
3.0
5.0
7.0
30
50
70
100
200
270 t1 +10 V V 0 <1 ns 9.2 k PULSE WIDTH (t1) = 5 s DUTY CYCLE = 2% 3V 8 pF CS < 4 pF C COPT TIME C < COPT C=0
If IB were suddenly removed, the transistor would continue to conduct until QS is removed from the active regions through an external path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a charge, QT, of opposite polarity, equal in magnitude, can be stored on an external capacitor, C, to neutralize the internal charge and considerably reduce the turnoff time of the transistor. Figure 3 shows the test circuit and Figure 4 the turnoff waveform. Given QT from Figure 13, the external C for worstcase turnoff in any circuit is: C = QT/V, where V is defined in Figure 3.
224
2N4264
ON CONDITION CHARACTERISTICS
1.0 VCE, MAXIMUM COLLECTOREMITTER VOLTAGE (VOLTS) 2N4264 TJ = 25C IC = 10 mA 0.6 50 mA 100 mA 200 mA
0.8
0.4
0.2
0.1
0.2
0.3
0.5
0.7
1.0
5.0
7.0
10
20
30
50
IC/IB = 10 TJ = 25C
MAX VCE(sat)
( 55C to 25C)
1.0
2.0 3.0
200
40
200
225
2N4264
DYNAMIC CHARACTERISTICS
200 100 t d, DELAY TIME (ns) 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0V td @ VEB(off) = 3 V t r , RISE TIME (ns) VCC = 10 V TJ = 25C 200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VCC = 3 V VCC = 10 V IC/IB = 10 TJ = 25C TJ = 125C
2V
200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 IC/IB = 10 IC/IB = 20 VCC = 10 V TJ = 25C TJ = 125C
30 20
IC/IB = 20
10 7.0 5.0 ts
^ ts 1/8 tf
IB1 = IB2
1000 700 500 300 200 QT 100 70 50 30 VCC = 3 V VCC = 10 V VCC = 3 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 QA IC/IB = 10 TJ = 25C TJ = 125C
5.0
3.0
Cobo
2.0 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (Vdc) 5.0 10
20
226
MOTOROLA
2N4400 2N4401*
*Motorola Preferred Device
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 60 6.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 60 6.0 0.1 0.1 Vdc Vdc Vdc Adc Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
227
2N4400 2N4401
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) hFE 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 2N4400 2N4401 VCE(sat) VBE(sat) 20 20 40 40 80 50 100 20 40 0.75 150 300 0.4 0.75 0.95 1.2 Vdc Vdc
(IC = 500 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc)
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time ( (VCC = 30 Vdc, VBE = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf 15 20 225 30 ns ns ns ns
4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
228
2N4400 2N4401
TRANSIENT CHARACTERISTICS
25C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 100C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS) 20 30 50 10 20 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 300 500 QT
VCC = 30 V IC/IB = 10
QA
Figure 3. Capacitances
100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
300 200 t s, STORAGE TIME (ns) ts = ts 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns)
100 70 50
10 7.0
30
5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
229
2N4400 2N4401
SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C Bandwidth = 1.0 Hz
10 IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k IC = 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 A IC = 100 A IC = 500 A IC = 1.0 mA
6.0
6.0
4.0
4.0
2.0 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between selected from both the 2N4400 and 2N4401 lines, and the hfe and other h parameters for this series of transistors. To same units were used to develop the correspondingly numobtain these curves, a highgain and a lowgain unit were bered curves on each graph.
300 hie , INPUT IMPEDANCE (OHMS) 200 hfe , CURRENT GAIN 50 k 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2
20 k 10 k 5.0 k
100 70 50 30 20 0.1 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2
0.2
0.3
2.0
3.0
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
20 10 5.0 2.0 1.0 0.1 2N4401 UNIT 1 2N4401 UNIT 2 2N4400 UNIT 1 2N4400 UNIT 2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
Figure 14. Output Admittance Motorola SmallSignal Transistors, FETs and Diodes Device Data
2N4400 2N4401
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 1.0 25C 0.7 0.5 0.3 0.2 0.1 55C
0.2
0.3
0.5
0.7
1.0
2.0
30
50
70
100
200
300
500
1.0 TJ = 25C
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0 0.01
0.02 0.03
0.2
0.3
2.0
3.0
5.0 7.0
10
20
30
50
0.6
VBE @ VCE = 10 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500
231
MOTOROLA
2N4402 2N4403*
*Motorola Preferred Device
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 5.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 40 5.0 0.1 0.1 Vdc Vdc Vdc Adc Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
232
2N4402 2N4403
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) hFE 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 Both VCE(sat) VBE(sat) 0.75 0.95 1.3 0.4 0.75 Vdc 30 30 60 50 100 50 100 20 150 300 Vdc
(IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc)(1) (IC = 500 mAdc, VCE = 2.0 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time ( (VCC = 30 Vdc, VBE = + 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mA, IB2 = 15 mA) td tr ts tf 15 20 225 30 ns ns ns ns
+ 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. TurnOn Time Motorola SmallSignal Transistors, FETs and Diodes Device Data
2N4402 2N4403
TRANSIENT CHARACTERISTICS
25C 30 20 CAPACITANCE (pF) 100C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 20 30 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 10 7.0 5.0 Ccb
VCC = 30 V IC/IB = 10
QT QA
Figure 3. Capacitances
100 70 50 t, TIME (ns) 30 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
200 IC/IB = 10 t s, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts = ts 1/8 tf 30 20 IC/IB = 20
10
20
30
50
70
100
200
300
500
234
2N4402 2N4403
SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C Bandwidth = 1.0 Hz
10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k NF, NOISE FIGURE (dB) 8
0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between selected from both the 2N4402 and 2N4403 lines, and the hfe and other h parameters for this series of transistors. To same units were used to develop the correspondingly obtain these curves, a highgain and a lowgain unit were numbered curves on each graph.
1000 700 500 hfe , CURRENT GAIN 300 200 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2
100 70 50
100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 3.0 5.0 7.0 10
Figure 12. Voltage Feedback Ratio Motorola SmallSignal Transistors, FETs and Diodes Device Data
2N4402 2N4403
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 55C
0.2
0.3
0.5
0.7
1.0
2.0
30
50
70
100
200
300
500
1.0 0.8
0.2
0 0.005
0.01
0.02
0.03
0.2
2.0
3.0
5.0
7.0
10
20
30
50
0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2
0.6
VBE(sat) @ VCE = 10 V
0.4
0.2
0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500
236
MOTOROLA
Amplifier Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N4410
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 120 5.0 250 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 500 Adc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) Collector Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CEX V(BR)CBO V(BR)EBO ICBO IEBO 0.01 1.0 0.1 Adc 80 120 120 5.0 Vdc Vdc Vdc Vdc Adc
REV 1
237
2N4410
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 60 60 VCE(sat) VBE(sat) VBE(on) 400 0.2 0.8 0.8 Vdc Vdc Vdc
0.2
0.3
0.5
0.7
1.0
10
20
30
50
70
100
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
238
2N4410
101 VCE = 30 V IC, COLLECTOR CURRENT ( A) 100 101 102 103 104 105 0.4 TJ = 125C
IC = ICES
0.3
0.2 0 0.1 0.2 0.3 0.4 0.1 VBE, BASEEMITTER VOLTAGE (VOLTS)
0.5
0.6
1.0
TJ = 25C
2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 TJ = 55C to +135C
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100
Figure 4. On Voltages
100 70 50 10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F C, CAPACITANCE (pF) VBB 8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo
TJ = 25C
Cobo
0.3
2.0
3.0
5.0 7.0
10
20
Figure 7. Capacitances
239
2N4410
1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V 100 50 0.2 0.3 0.5 tr @ VCC = 30 V IC/IB = 10 TJ = 25C tr @ VCC = 120 V t, TIME (ns) 5000 3000 2000 tf @ VCC = 30 V 1000 500 300 200 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25C
1.0
50
100
200
100
200
240
MOTOROLA
Amplifier Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N5087
Motorola Preferred Device
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 50 3.0 50 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO ICBO IEBO 50 50 50 50 Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces 2N5086/D)
241
2N5087
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(1) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 250 250 250 VCE(sat) VBE(on) 800 0.3 0.85 Vdc Vdc
242
2N5087
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 3.0 2.0 1.0 mA 100 A 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 A 100 A 30 A 10 A IC = 1.0 mA
BANDWIDTH = 1.0 Hz RS
BANDWIDTH = 1.0 Hz
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A) 2 2 1 2 + 20 log10 en2 ) 4KTRS ) In RS 4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
Figure 5. Wideband Motorola SmallSignal Transistors, FETs and Diodes Device Data 243
2N5087
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C 25C
200
55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100
0.6
0.4
40
100 A 50 A
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 55C to 25C 0.8 25C to 125C 1.6 25C to 125C
55C to 25C
2.4 0.1
50
100
Figure 9. On Voltages
244
2N5087
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 1.0 ts
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C
245
2N5087
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.05
0.1
0.2
0.5
1.0
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25C
1.0 ms 100 s dc TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10 s
1.0 s
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
40
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 40 20 ICEO
246
MOTOROLA
Amplifier Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N5088 2N5089
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5088 30 35 3.0 50 625 5.0 1.5 12 55 to +150 2N5089 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. RJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO 2N5088 2N5089 V(BR)CBO 2N5088 2N5089 ICBO 2N5088 2N5089 IEBO 50 100 50 50 nAdc 35 30 nAdc 30 25 Vdc Vdc
247
2N5088 2N5089
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) hFE 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 VCE(sat) VBE(on) 300 400 350 450 300 400 900 1200 0.5 0.8 Vdc Vdc
(IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(2) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc)(2)
RS
in en
IDEAL TRANSISTOR
248
2N5088 2N5089
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS 0 20 RS 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz
10 7.0 5.0
300 A 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz IC = 10 mA
8.0
IC = 10 mA
12
8.0 100 A 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 A 10 A
249
2N5088 2N5089
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 55C
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) RVBE, BASEEMITTER TEMPERATURE COEFFICIENT (mV/ C)
0.4 0.8
0.6
1.2
0.4
1.6
TJ = 25C to 125C
0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
2.0 55C to 25C 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)
20
50 100
Figure 9. On Voltages
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)
8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25C
500
300 200
100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25C
1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
250
MOTOROLA
Amplifier Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N5209 2N5210
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 50 4.0 50 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO ICBO IEBO 50 50 50 50 Vdc Vdc nAdc nAdc
251
2N5209 2N5210
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) hFE 2N5209 2N5210 2N5209 2N5210 2N5209 2N5210 VCE(sat) VBE(on) 100 200 150 250 150 250 300 600 0.7 0.85 Vdc Vdc
(IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(1) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc)
RS
in en
IDEAL TRANSISTOR
252
2N5209 2N5210
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS 0 20 RS 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz
10 7.0 5.0
300 A 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz IC = 10 mA
8.0
IC = 10 mA
12
8.0 100 A 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 A 10 A
253
2N5209 2N5210
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 55C
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) RVBE, BASEEMITTER TEMPERATURE COEFFICIENT (mV/ C)
0.4 0.8
0.6
1.2
0.4
1.6
TJ = 25C to 125C
0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
2.0 55C to 25C 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)
20
50 100
Figure 9. On Voltages
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)
8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25C
500
300 200
100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25C
1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
254
MOTOROLA
Amplifier Transistors
PNP Silicon
2N5400 2N5401*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5400 120 130 5.0 600 625 5.0 1.5 12 55 to +150 2N5401 150 160 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) (VCB = 120 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO 2N5400 2N5401 V(BR)CBO 2N5400 2N5401 V(BR)EBO ICBO 2N5400 2N5401 2N5400 2N5401 IEBO 100 50 100 50 50 130 160 5.0 120 150
Vdc
Vdc
Vdc
255
2N5400 2N5401
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 2N5400 2N5401 2N5400 2N5401 2N5400 2N5401 VCE(sat) VBE(sat) 1.0 1.0 0.2 0.5 Vdc 30 50 40 60 40 50 180 240 Vdc
(IC = 50 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)
256
2N5400 2N5401
200 150 TJ = 125C h FE, CURRENT GAIN 100 70 50 55C 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 VCE = 1.0 V VCE = 5.0 V 25C
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
103 IC, COLLECTOR CURRENT ( A) 102 101 TJ = 125C 100 75C 101 102 103 0.3 REVERSE 25C FORWARD VCE = 30 V IC = ICES
0.2
0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASEEMITTER VOLTAGE (VOLTS)
0.6
0.7
257
2N5400 2N5401
V, TEMPERATURE COEFFICIENT (mV/ C) 1.0 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 VB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VC for VCE(sat) TJ = 55C to 135C
Figure 4. On Voltages
10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F 100 RB 5.1 k Vin 100 1N914 3.0 k RC Vout
C, CAPACITANCE (pF)
VBB + 8.8 V
VCC 30 V
TJ = 25C
Cobo
0.3
2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS)
10
20
Figure 7. Capacitances
2000 IC/IB = 10 TJ = 25C tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V
258
MOTOROLA
Amplifier Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
2N5550 2N5551*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5550 140 160 6.0 600 625 5.0 1.5 12 55 to +150 2N5551 160 180 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) (VCB = 120 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO ICBO 2N5550 2N5551 2N5550 2N5551 IEBO 100 50 100 50 50 160 180 6.0 140 160
Vdc
Vdc
Vdc
259
2N5550 2N5551
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat) Both Types 2N5550 2N5551 VBE(sat) Both Types 2N5550 2N5551 1.0 1.2 1.0 0.15 0.25 0.20 Vdc 60 80 60 80 20 30 250 250 Vdc
(IC = 50 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)
260
2N5550 2N5551
500 300 200 h FE, DC CURRENT GAIN 100 55C 50 30 20 10 7.0 5.0 0.1 TJ = 125C 25C VCE = 1.0 V VCE = 5.0 V
0.2
0.3
0.5
0.7
1.0
10
20
30
50
70
100
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
261
2N5550 2N5551
101 VCE = 30 V IC, COLLECTOR CURRENT ( A) 100 101 102 103 104 105 0.4 TJ = 125C
IC = ICES
0.3
0.2 0 0.1 0.2 0.3 0.4 0.1 VBE, BASEEMITTER VOLTAGE (VOLTS)
0.5
0.6
1.0
TJ = 25C
2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 TJ = 55C to +135C
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100
Figure 4. On Voltages
100 70 50 10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F C, CAPACITANCE (pF) VBB 8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo
TJ = 25C
Cobo
0.3
2.0
3.0
5.0 7.0
10
20
Figure 7. Capacitances
262
2N5550 2N5551
1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V 100 50 0.2 0.3 0.5 tr @ VCC = 30 V IC/IB = 10 TJ = 25C tr @ VCC = 120 V t, TIME (ns) 5000 3000 2000 tf @ VCC = 30 V 1000 500 300 200 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25C
1.0
50
100
200
100
200
263
MOTOROLA
Darlington Transistors
NPN Silicon
COLLECTOR 3 BASE 2
2N6426* 2N6427
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 12 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (1) (IC = 10 mAdc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 40 40 12 1.0 50 50 Vdc Vdc Vdc
mAdc
nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
264
2N6426 2N6427
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 5.0 Vdc) hFE 2N6426 2N6427 2N6426 2N6427 2N6426 2N6427 VCE(sat) VBE(sat) VBE(on) 0.71 0.9 1.52 1.24 1.2 1.5 2.0 1.75 Vdc Vdc 20,000 10,000 30,000 20,000 20,000 14,000 200,000 100,000 300,000 200,000 200,000 140,000 Vdc
(IC = 500 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc)
mmhos
dB
in en
IDEAL TRANSISTOR
265
2N6426 2N6427
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
500 200 en, NOISE VOLTAGE (nV) 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 A 10 A
IC = 1.0 mA
200
100 70 50 30 20
BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 A 10 10 A 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 A
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
266
2N6426 2N6427
SMALLSIGNALCHARACTERISTICS
20 TJ = 25C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALLSIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
2.0
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
Figure 6. Capacitance
200 k TJ = 125C hFE, DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
25C
1.5
1.0
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.0
25C TO 125C
2.0
0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
500
267
2N6426 2N6427
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
SINGLE PULSE ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25C TC = 25C
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP
268
MOTOROLA
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520 Base Current Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO 6.0 5.0 IB IC PD 250 500 625 5.0 1.5 12 55 to +150 mAdc mAdc mW mW/C Watts mW/C C
1 2 3
PD
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 2N6515 2N6519 2N6517, 2N6520 V(BR)CBO 2N6515 2N6519 2N6517, 2N6520 V(BR)EBO 2N6515, 2N6517 2N6519, 2N6520 6.0 5.0 250 300 350 Vdc 250 300 350 Vdc Vdc
Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
REV 1
269
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) hFE 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 2N6515 2N6519 2N6517, 2N6520 VCE(sat) VBE(sat) VBE(on) 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc 35 30 20 50 45 30 50 45 30 45 40 20 25 20 15 300 270 200 220 200 200 Vdc
Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc)
SWITCHING CHARACTERISTICS
TurnOn Time (VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) TurnOff Time (VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. ton toff 200 3.5 s s
270
PNP 2N6519
TJ = 125C 25C
100 70
25C
100 70 50
55C
55C 50
30 20 1.0
30 20 1.0
2.0
3.0
50
70 100
50 70 100
2N6517
200 VCE = 10 V hFE , DC CURRENT GAIN 100 70 50 55C 30 20 25C TJ = 125C hFE , DC CURRENT GAIN 100 70 200 VCE = 10 V
2N6520
50 30 20
10 1.0
2.0
50 70 100
10 1.0
50 70 100
2N6515, 2N6517
100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
2N6519, 2N6520
100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
30 20
30 20
10 1.0
2.0
50 70
100
10 1.0
50 70 100
271
Figure 4. On Voltages
2N6515, 2N6517
RV, TEMPERATURE COEFFICIENTS (mV/C) 2.0 1.5 1.0 0.5 0 RVC for VCE(sat) 55C to 25C IC IB
2N6519, 2N6520
RV, TEMPERATURE COEFFICIENTS (mV/C) 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 RVC for VCE(sat) 55C to 125C RVB for VBE IC IB
2.5
+ 10
25C to 125C
+ 10
25C to 125C 55C to 25C
2.0
50
70
100
50 70 100
2N6515, 2N6517
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Ceb C, CAPACITANCE (pF) TJ = 25C 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2
2N6519, 2N6520
Ceb TJ = 25C
Ccb
Ccb
0.5
50 100 200
0.5 1.0 2.0 5.0 10 20 50 100 200 VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
272
td @ VBE(off) = 2.0 V
2.0
50
70 100
50 70 100
2N6515, 2N6517
10 k 7.0 k 5.0 k 3.0 k 2.0 k t, TIME (ns) 1.0 k 700 500 300 200 100 1.0 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C 2.0 k ts ts 1.0 k 700 500 300 200 100 70 50 30 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 20 1.0 tf
2N6519, 2N6520
50 70 100
273
+10.8 V
20 k
50 SAMPLING SCOPE
APPROXIMATELY 1.35 V
0.05
SINGLE PULSE ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
500 IC, COLLECTOR CURRENT (mA) 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 1.0 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 2N6515 2N6519 2N6517, 2N6520 500 TA = 25C TC = 25C 100 ms 100 s 10 s 1.0 ms
FIGURE A tP PP PP
274
MOTOROLA
2SA1774
PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
DEVICE MARKING
2SA1774 = F9
COLLECTOR 3
THERMAL CHARACTERISTICS
Rating Power Dissipation(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 55 ~ + 150 Unit mW C C 1 BASE 2 EMITTER
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, D.C. 2%.
REV 1
275
2SA1774
TYPICAL ELECTRICAL CHARACTERISTICS
1000 TA = 25C IC, COLLECTOR CURRENT (mA) 120 DC CURRENT GAIN TA = 75C 300 A 250 200 150 30 0 100 IB = 50 A 0 3 6 9 12 15 10 0.1 1 10 100 TA = 25C 100 TA = 25C VCE = 10 V
90
60
Figure 1. IC VCE
2 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1
0.5
TA = 25C VCE = 5 V
10
20
40
60
80
100
150 200
Figure 4. On Voltage
20 VCB (V)
30
40
Figure 5. Capacitance
Figure 6. Capacitance
276
MOTOROLA
Preliminary Information
2SC4617
NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
3 2 1
DEVICE MARKING
2SC4617 = B9
COLLECTOR 3
THERMAL CHARACTERISTICS
Rating Power Dissipation(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 125 150 55 ~ + 150 Unit mW C C 1 BASE 2 EMITTER
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, D.C. 2%.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
277
2SC4617
TYPICAL ELECTRICAL CHARACTERISTICS
60 TA = 25C IC, COLLECTOR CURRENT (mA) 50 40 30 20 10 0 160 A 140 A DC CURRENT GAIN 120 A 100 A 80 A 60 A 40 A IB = 20 A 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 8 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) TA = 75C 1000 TA = 25C VCE = 10 V
TA = 25C 100
Figure 1. IC VCE
2 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1
0.5
TA = 25C VCE = 5 V
10
20
40
60
80
100
150 200
Figure 4. On Voltage
18
16
14
12
10
2 VEB (V)
10
20 VCB (V)
30
40
Figure 5. Capacitance
Figure 6. Capacitance
278
MOTOROLA
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC182 50 60 BC183 30 45 6.0 100 350 2.8 1.0 8.0 55 to +150 BC184 30 45 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO BC182 BC183 BC184 V(BR)CBO BC182 BC183 BC184 V(BR)EBO ICBO BC182 BC183 BC184 IEBO 0.2 0.2 0.2 15 15 15 15 nA 60 45 45 6.0 V nA 50 30 30 V V
Emitter Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCB = 50 V, VBE = 0) (VCB = 30 V, VBE = 0) EmitterBase Leakage Current (VEB = 4.0 V, IC = 0)
279
ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) hFE BC182 BC183 BC184 BC182 BC183 BC184 BC182 BC183 BC184 VCE(sat) VBE(sat) VBE(on) 0.55 0.5 0.62 0.83 0.7 0.07 0.2 0.25 0.6 1.2 V V 40 40 100 120 120 250 80 80 130 500 800 800 V
Collector Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA)(1) Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)(1) BaseEmitter On Voltage (IC = 100 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)(1)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) fT BC182 BC183 BC184 BC182 BC183 BC184 Cob Cib hfe BC182 BC183 BC184 BC182A BC182B NF 125 125 240 125 240 500 900 900 260 500 dB 150 150 150 100 120 140 200 240 280 8.0 5.0 pF pF MHz
Common Base Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Common Base Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz) (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz)
4.0 10 10 4.0
280
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
VCE = 10 V TA = 25C
30
50
1.0 0.4
20
40
Figure 4. Capacitances
170 160
140
130
120 0.1
0.2
5.0
10
281
MOTOROLA
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC212 50 60 BC213 30 45 5.0 100 350 2.8 1.0 8.0 55 to +150 BC214 30 45 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W
V(BR)CBO
Vdc
V(BR)EBO
Vdc
ICBO
nAdc
IEBO
nAdc
282
ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) hFE BC212 BC213 BC214 BC212 BC213 BC214 BC212, BC214 BC213 VCE(sat) VBE(sat) VBE(on) 0.6 0.10 0.25 1.0 0.62 0.6 1.4 0.72 Vdc Vdc 40 40 100 60 80 140 120 140 600 Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc)(1) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc)(1) Base Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) fT BC212 BC214 BC213 Cob NF BC214 BC212, BC213 hfe BC212 BC213 BC214 BC212B 60 80 140 200 400 2 10 280 320 360 6.0 pF dB MHz
CommonBase Output Capacitance (VCB = 10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k , f = 1.0 kHz) (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
283
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mAdc)
0 0.1 0.2
400 300 200 C, CAPACITANCE (pF) 150 100 80 60 40 30 20 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 VCE = 10 V TA = 25C
1.0
20 30 40
Figure 4. Capacitances
0.5 0.3
150 140
130
120
110
0.01 0.1
0.2
5.0
10
100 0.1
0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc)
5.0
10
284
MOTOROLA
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg BC237 45 50 6.0 BC238 25 30 5.0 100 350 2.8 1.0 8.0 55 to +150 BC239 25 30 5.0 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mA, IC = 0) Collector Cutoff Current (VCE = 30 V, VBE = 0) BC237 BC238 BC239 BC237 BC238 BC239 BC238 BC239 BC237 BC238 BC239 BC237 V(BR)CEO 45 25 25 6.0 5.0 5.0 0.2 0.2 0.2 0.2 0.2 0.2 15 15 15 4.0 4.0 4.0 A V
V(BR)EBO
ICES nA
REV 1
285
ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) hFE BC237A BC237B/238B BC237C/238C/239C BC237 BC239 BC237A BC237B/238B BC237C/238C/239C BC237A BC237B/238B BC237C/238C/239C VCE(sat) BC237/BC238/BC239 BC237/BC239 BC238 VBE(sat) VBE(on) 0.55 0.5 0.62 0.83 0.7 0.6 0.83 1.05 V 0.07 0.2 0.2 0.6 0.8 V 120 120 120 200 380 90 150 270 170 290 500 120 180 300 800 800 220 460 800 V
Collector Emitter On Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) BaseEmitter On Voltage (IC = 100 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 0.5 mA, VCE = 3.0 V, f = 100 MHz) fT BC237 BC238 BC239 BC237 BC238 BC239 Cobo Cibo NF BC239 (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) BC237 BC238 BC239 2.0 2.0 2.0 2.0 4.0 10 10 4.0 150 150 150 100 120 140 200 240 280 8.0 4.5 pF pF dB MHz
CollectorBase Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2.0 k, f = 1.0 kHz)
286
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
VCE = 10 V TA = 25C
30
50
1.0 0.4
20
40
Figure 4. Capacitances
170 160
140
130
120 0.1
0.2
5.0
10
287
MOTOROLA
Amplifier Transistors
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC307, B, C 45 50 5.0 100 350 2.8 1.0 8.0 55 to +150 BC308C 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) CollectorEmitter Leakage Current (VCES = 50 V, VBE = 0) (VCES = 30 V, VBE = 0) (VCES = 50 V, VBE = 0) TA = 125C (VCES = 30 V, VBE = 0) TA = 125C BC307,B,C BC308C BC307,B,C BC308C BC307,B,C BC308C BC307,B,C BC308C V(BR)CEO V(BR)EBO ICES 0.2 0.2 0.2 0.2 15 15 4.0 4.0 nAdc A 45 25 5.0 5.0 Vdc Vdc
REV 1
288
ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) hFE BC307B BC307C/308C BC307 BC307B/308B BC307C/308C BC307B BC307C/308C VCE(sat) VBE(sat) VBE(on) 0.55 0.7 1.0 0.62 0.7 Vdc 0.10 0.30 0.25 0.3 0.6 Vdc 120 200 420 150 270 290 500 180 300 800 460 800 Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see Note 1) (IC = 100 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Common Base Capacitance (VCB = 10 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, f = 200 Hz) fT BC307,B,C BC308C Ccbo NF BC307,B,C 2.0 10 280 320 6.0 pF dB MHz
BC308C
2.0
10
1. IC = 10 mAdc on the constant base current characteristic, which yields the point IC = 11 mAdc, VCE = 1.0 V.
289
0.3
400 300 200 C, CAPACITANCE (pF) 150 100 80 60 40 30 20 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 VCE = 10 V TA = 25C
1.0
20 30 40
Figure 4. Capacitances
0.5 0.3
150 140
130
120
110
0.01 0.1
0.2
5.0
10
100 0.1
0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mAdc)
5.0
10
290
MOTOROLA
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC327,-16,-25 BC328,-16,-25
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC327 45 50 5.0 800 625 5.0 1.5 12 55 to +150 BC328 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector Emitter Breakdown Voltage (IC = 100 A, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) BC327 BC328 ICES BC327 BC328 IEBO 100 100 100 nAdc V(BR)CEO BC327 BC328 V(BR)CES BC327 BC328 V(BR)EBO ICBO 100 100 nAdc 50 30 5.0 Vdc nAdc 45 25 Vdc Vdc
291
BC327,-16,-25 BC328,-16,-25
ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC327/BC328 BC32716/BC32816 BC32725/BC32825 VBE(on) VCE(sat) 100 100 160 40 630 250 400 1.2 0.7 Vdc Vdc
(IC = 300 mA, VCE = 1.0 V) BaseEmitter On Voltage (IC = 300 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA)
SMALLSIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Cob fT 11 260 pF MHz
1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001
D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 5.0 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) JC(t) 10 20 50 100
0.002
0.005
0.01
1.0 s
1.0 ms
100
10 1.0
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOREMITTER VOLTAGE
100
10 0.1
1000
292
BC327,-16,-25 BC328,-16,-25
0.6
0.4 IC = 300 mA 0.2 0 0.01 IC = 10 mA 0.1 1.0 10 IB, BASE CURRENT (mA) 100 IC = 100 mA
0.4
0.2 VCE(sat) @ IC/IB = 10 0 1.0 10 100 IC, COLLECTOR CURRENT (mA) 1000
Figure 5. On Voltages
100
C, CAPACITANCE (pF)
Cib 10
1.0
2.0
VB for VBE
Cob
1.0
1000
1.0 0.1
100
Figure 7. Capacitances
293
MOTOROLA
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC337,-16,-25,-40 BC338,-16,-25,-40
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC337 45 50 5.0 800 625 5.0 1.5 12 55 to +150 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector Emitter Breakdown Voltage (IC = 100 A, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) BC337 BC338 ICES BC337 BC338 IEBO 100 100 100 nAdc V(BR)CEO BC337 BC338 V(BR)CES BC337 BC338 V(BR)EBO ICBO 100 100 nAdc 50 30 5.0 Vdc nAdc 45 25 Vdc Vdc
294
BC337,-16,-25,-40 BC338,-16,-25,-40
ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC337/BC338 BC33716/BC33816 BC33725/BC33825 BC33740/BC33840 VBE(on) VCE(sat) 100 100 160 250 60 630 250 400 630 1.2 0.7 Vdc Vdc
(IC = 300 mA, VCE = 1.0 V) BaseEmitter On Voltage (IC = 300 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA)
SMALLSIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) Cob fT 15 210 pF MHz
1.0 0.7 0.5 0.3 0.2 0.1 0.05 0.07 0.02 0.05 0.03 0.02 0.01 0.001
D = 0.5 0.2 0.1 P(pk) SINGLE PULSE 0.01 SINGLE PULSE t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 2.0 5.0 JC(t) = (t) JC JC = 100C/W MAX JA(t) = r(t) JA JA = 375C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) JC(t) 10 20 50 100
0.002
0.005
0.01
1.0 s
1.0 ms
100
10 1.0
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOREMITTER VOLTAGE 100
10 0.1
1000
295
BC337,-16,-25,-40 BC338,-16,-25,-40
0.4
0.4
0.2 0 0.01
0.2 VCE(sat) @ IC/IB = 10 0 0.1 1 IB, BASE CURRENT (mA) 10 100 1 10 100 IC, COLLECTOR CURRENT (mA) 1000
Figure 5. On Voltages
100
Cib 10
VB for VBE
Cob
1000
1 0.1
100
Figure 7. Capacitances
296
MOTOROLA
Amplifier Transistors
COLLECTOR 2 3 BASE NPN 1 EMITTER 3 BASE
COLLECTOR 2
PNP 1 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg Value 20 25 5.0 1.0 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector Base Breakdown Voltage (IC = 100 A, IE = 0 ) Emitter Base Breakdown Voltage (IE = 100 A, IC = 0) Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150C) Emitter Cutoff Current (VEB = 5.0 V, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 10 1.0 10 20 25 5.0 Vdc Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V, IC = 0.5 A) (VCE = 1.0 V, IC = 1.0 A) Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz) CollectorEmitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) BaseEmitter On Voltage (IC = 1.0 A, VCE = 1.0 V) hFE 50 85 60 fT VCE(sat) VBE(on) 65 375 0.5 1.0 MHz V V
297
IC = 10 mA 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA)
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(on) @ VCE = 1.0 V 0.6 VBE(sat) @ IC/IB = 10 VB , TEMPERATURE COEFFICIENT (mV/ C)
0.8
1.2
0.4
2.0
0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA)
2.4
Figure 3. On Voltages
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)
80 Cibo 40 Cobo 0 Cobo Cibo 5.0 1.0 10 2.0 15 3.0 20 4.0 25 5.0
30
Figure 6. Capacitance
298
MOTOROLA
BC372 BC373
1 2
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg BC372 100 100 12 1.0 625 5.0 1.5 12 55 to +150 BC373 80 80 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 V, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. BC372 BC373 IEBO V(BR)CES BC372 BC373 V(BR)CBO BC372 BC373 V(BR)EBO ICBO 100 100 100 nAdc 100 80 12 Vdc nAdc 100 80 Vdc Vdc
299
BC372 BC373
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) Base Emitter Saturation Voltage (IC = 250 mAdc, IB = 0.25 mAdc) hFE 8.0 10 VCE(sat) VBE(sat) 1.0 1.4 160 1.1 2.0 Vdc Vdc K
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 100 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 5.0 Vdc, Rg = 100 k ohm, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. fT Cob NF 100 200 10 2.0 25 MHz pF dB
1.6 VBE(sat) @ IC/IB = 100 1.4 1.2 VOLTAGE (V) 1 0.8 0.6 0.4 0.2 VCE(sat) @ IC/IB = 100 VBE(on) @ VCE = 5 V
100
Cib Cob
100
10
10 0.6 1
600
1 0.1
100
Figure 4. Capacitances
2100
MOTOROLA
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC489,A,B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 80 5.0 0.5 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 80 80 5.0 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS*
DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE BC489 BC489A BC489B 40 60 100 160 15 160 260 400 250 400
(IC = 1.0 Adc, VCE = 5.0 Vdc)* 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
2101
BC489,A,B
ON CHARACTERISTICS* (Continued)
Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)(1) VCE(sat) VBE(sat) 0.85 0.9 1.2 0.2 0.3 0.5 Vdc Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. fT Cob Cib 200 7.0 50 MHz pF pF
TURNON TIME 5.0 s +10 V 0 tr = 3.0 ns Vin 5.0 F 1.0 V 100 RB 100 VCC +40 V RL OUTPUT Vin
TURNOFF TIME +VBB 100 RB 5.0 F 5.0 s tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 100 VCC +40 V RL OUTPUT
2102
BC489,A,B
80 60 40 Cibo TJ = 25C
100 70 50
20
10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
30 2.0
3.0
200
4.0 0.1
Figure 3. Capacitance
1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C 10
ts
tf tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
10 5.0 7.0
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0
P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) TJ(pk) TC = P(pk) ZJC(t) TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
ZJC(t) = r(t) RJC ZJA(t) = r(t) RJA 20 50 100 200 500 t, TIME (ms) 1.0 k 2.0 k
2.0
5.0
10
2103
BC489,A,B
1.0 k 700 500 300 200 100 70 50 30 20 10 1.0 TA = 25C TC = 25C 1.0 s
100 s 1.0 ms
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC489 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 70 100
400 TJ =125C hFE , DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500
VCE = 1.0 V
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V
0.6
0.4
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500
0.2
0 0.05
0.1
0.2
20
50
Figure 8. On Voltages
2104
BC489,A,B
1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4
2.0
2.4
2.8 0.5
1.0
2.0
200
500
0 0.5
1.0
2.0
500
TJ = 25C 0.8
1.0
0.8
1.2
0.6
2.0
2.4
10
20
50
2.8 0.5
1.0
2.0
500
2105
MOTOROLA
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC490,A
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 80 4.0 0.5 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 80 80 4.0 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS*
DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. hFE BC490 BC490A 40 60 100 15 140 400 250
2106
BC490,A
ON CHARACTERISTICS(1) (Continued)
Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) VBE(sat) 0.9 1.0 1.2 0.25 0.5 0.5 Vdc Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. fT Cob Cib 150 9.0 110 MHz pF pF
TURNON TIME 5.0 s +10 V 0 tr = 3.0 ns Vin 5.0 F 1.0 V 100 RB 100 VCC +40 V RL OUTPUT Vin
TURNOFF TIME +VBB 100 RB 5.0 F 5.0 s tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 100 VCC +40 V RL OUTPUT
2107
BC490,A
10 30 7.0 20 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 5.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
Cobo
50 100
Figure 3. Capacitance
tf
500
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0
P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) TJ(pk) TC = P(pk) ZJC(t) TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
ZJC(t) = r(t) RJC ZJA(t) = r(t) RJA 20 50 100 200 500 t, TIME (ms) 1.0 k 2.0 k
2.0
5.0
10
2108
BC490,A
1.0 k 700 IC, COLLECTOR CURRENT (mA) 500 300 200 TA = 25C 100 70 50 30 20 10 1.0 TC = 25C
100 s
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V
1.0 s 1.0 ms
0.4
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC490 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500
Figure 7. On Voltages
1.0
0.8 1.2
0.6
1.6
0.4
0.2
0 0.05
0.1
0.2
20
50
2.8 0.5
1.0
2.0
200
500
400 TJ = 125C hFE , DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5
VCE = 1.0 V
0.7
1.0
2.0
3.0
5.0
50
70
100
200
300
500
2109
BC490,A
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V
0.6 IC = 10 mA 0.4
50 mA
100 mA
250 mA
500 mA
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500
0.2
0 0.05 0.1
0.2
10
20
50
0.8 1.2
2.0
2.4
2.8 0.5
1.0
2.0
500
2110
MOTOROLA
Darlington Transistors
NPN Silicon
COLLECTOR 1 BASE 2
BC517
EMITTER 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCB VEB IC PD PD TJ, Tstg Value 30 40 10 1.0 625 12 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, VBE = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 nAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES V(BR)CBO V(BR)EBO ICES ICBO IEBO 30 40 10 500 100 100 Vdc Vdc Vdc nAdc nAdc nAdc
2111
BC517
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) hFE VCE(sat) VBE(on) 30,000 1.0 1.4 Vdc Vdc
v 2.0%.
RS
in en
IDEAL TRANSISTOR
2112
BC517
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
500 200 en, NOISE VOLTAGE (nV) 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 A 10 A
IC = 1.0 mA
200
100 70 50 30 20
BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 A 10 10 A 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 A
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2113
BC517
SMALLSIGNAL CHARACTERISTICS
20 TJ = 25C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALLSIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
2.0
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
Figure 6. Capacitance
200 k TJ = 125C hFE, DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
25C
1.5
1.0
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.0
25C TO 125C
2.0
0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
500
2114
BC517
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
SINGLE PULSE ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25C TC = 25C
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP
2115
MOTOROLA
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC546 65 80 BC547 45 50 6.0 100 625 5.0 1.5 12 55 to +150 BC548 30 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc) Emitter Base Breakdown Voltage (IE = 10 mA, IC = 0) Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125C) BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546/547/548 V(BR)CEO 65 45 30 80 50 30 6.0 6.0 6.0 0.2 0.2 0.2 15 15 15 4.0 V
V(BR)CBO
V(BR)EBO
ICES nA
REV 1
2116
ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) hFE BC547A/548A BC546B/547B/548B BC548C BC546 BC547 BC548 BC547A/548A BC546B/547B/548B BC547C/BC548C BC547A/548A BC546B/547B/548B BC548C VCE(sat) VBE(sat) VBE(on) 0.55 0.7 0.77 0.09 0.2 0.3 0.7 0.25 0.6 0.6 V V 110 110 110 110 200 420 90 150 270 180 290 520 120 180 300 450 800 800 220 450 800 V
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (IC = 10 mA, IB = See Note 1) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) BaseEmitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V)
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC546 BC547 BC548 Cobo Cibo hfe BC546 BC547/548 BC547A/548A BC546B/547B/548B BC547C/548C NF BC546 BC547 BC548 2.0 2.0 2.0 10 10 10 125 125 125 240 450 220 330 600 500 900 260 500 900 dB 150 150 150 300 300 300 1.7 10 4.5 pF pF MHz
Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 V, IC = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1.0 kHz, f = 200 Hz)
2117
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 1.0 20 2.0 5.0 10 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10
0.4
0.02
10
20
0.2
100
BC547/BC548
10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 400 300 200
VCE = 10 V TA = 25C
1.0
20
40
1.0
30
50
Figure 5. Capacitances
2118
BC547/BC548
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TA = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4
0.2 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200
Figure 8. On Voltage
2.0 TA = 25C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA VB, TEMPERATURE COEFFICIENT (mV/ C)
1.0
1.4
0.8
0.4
2.6
3.0 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) 50 100 200
0.02
0.05
0.1
5.0
10
20
BC546
f T, CURRENTGAIN BANDWIDTH PRODUCT 40 TA = 25C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob
500
VCE = 5 V TA = 25C
200 100 50
20
2.0
0.1
0.2
50
100
2119
MOTOROLA
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC549B,C BC550B,C
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC549 30 30 5.0 100 625 5.0 1.5 12 55 to +150 BC550 45 50 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 30 V, IE = 0, TA = +125C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO BC549B,C BC550B,C V(BR)CBO BC549B,C BC550B,C V(BR)EBO ICBO IEBO 15 5.0 15 nAdc Adc nAdc 30 50 5.0 Vdc 30 45 Vdc Vdc
2120
BC549B,C BC550B,C
ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) BaseEmitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE BC549B/550B BC549C/550C BC549B/550B BC549C/550C VCE(sat) VBE(sat) VBE(on) 0.55 0.52 0.55 0.62 0.7 0.075 0.3 0.25 1.1 0.25 0.6 0.6 Vdc Vdc 100 100 200 420 150 270 290 500 450 800 Vdc
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC549B/BC550B BC549C/BC550C NF1 NF2 fT Ccbo hfe 240 450 330 600 0.6 500 900 dB 2.5 10 250 2.5 MHz pF
Noise Figure (IC = 200 Adc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) (IC = 200 Adc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz) NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 s Duty cycle = 2%.
RS
in en
IDEAL TRANSISTOR
2121
BC549B,C BC550B,C
2.0 hFE, NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 TA = 25C VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
100 80 60 40 30 20
VCE = 10 V TA = 25C
0.5 0.7
1.0
50
1.0 0.4
0.6
1.0
20
40
Figure 5. Capacitance
170 160
140
130
120 0.1
0.2
5.0
10
2122
MOTOROLA
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC556 65 80 BC557 45 50 5.0 100 625 5.0 1.5 12 55 to +150 BC558 30 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) V(BR)CEO BC556 BC557 BC558 V(BR)CBO BC556 BC557 BC558 V(BR)EBO BC556 BC557 BC558 ICES BC556 BC557 BC558 BC556 BC557 BC558 2.0 2.0 2.0 100 100 100 4.0 4.0 4.0 nA 5.0 5.0 5.0 80 50 30 V 65 45 30 V V
2123
ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 V) hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C VCE(sat) VBE(sat) VBE(on) 0.55 0.62 0.7 0.7 0.82 0.7 1.0 V 0.075 0.3 0.25 0.3 0.6 0.65 V 120 120 120 120 180 420 90 150 270 170 290 500 120 180 300 500 800 800 220 460 800 V
Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see Note 1) (IC = 100 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) fT BC556 BC557 BC558 Cob NF BC556 BC557 BC558 hfe BC556 BC557/558 BC557A BC556B/557B/558B BC557C 125 125 125 240 450 220 330 600 500 900 260 500 900 2.0 2.0 2.0 10 10 10 280 320 360 3.0 6.0 pF dB MHz
Output Capacitance (VCB = 10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 V, RS = 2.0 kW, f = 1.0 kHz, f = 200 Hz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
Note 1: IC = 10 mAdc on the constant base current characteristics, which yields the point IC = 11 mAdc, VCE = 1.0 V.
2124
BC557/BC558
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10
100 200
0 0.1 0.2
2.0 VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOREMITTER VOLTAGE (V) TA = 25C 1.6
0.8
0.4
0.02
10 20
0.2
100
3.0 2.0
1.0
2.0
4.0 6.0
10
20 30 40
1.0
2.0 3.0
5.0
10
20
30
50
Figure 5. Capacitances
2125
BC556
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5.0 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4
0.2 0.2 0 0.2 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (AMP) 0.5 50 100 200 5.0 10 20 1.0 2.0 IC, COLLECTOR CURRENT (mA)
0.1 0.2
Figure 8. On Voltage
1.0
1.4
1.2
1.8
VB for VBE
55C to 125C
0.8
2.2
0.4 TJ = 25C 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20
2.6
3.0 0.2
0.5 1.0
100 200
500
VCE = 5.0 V
200 100 50
20
50 100
2126
D = 0.5 0.2 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZJC(t) = (t) RJC RJC = 83.3C/W MAX ZJA(t) = r(t) RJA RJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 500 1.0 k 2.0 k 5.0 k 10 k
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
200 1s IC, COLLECTOR CURRENT (mA) 100 50 TA = 25C TJ = 25C 3 ms The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
10 5.0
BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 5.0 10 30 45 65 100 VCE, COLLECTOREMITTER VOLTAGE (V)
2.0 1.0
2127
MOTOROLA
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC559x 30 30 5.0 100 625 5.0 1.5 12 55 to +150 BC560C 45 50 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = +125C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO BC559B, C BC560C V(BR)CBO BC559B, C BC560C V(BR)EBO ICBO IEBO 15 5.0 15 nAdc Adc nAdc 30 50 5.0 Vdc 30 45 Vdc Vdc
replaces BC559/D
2128
ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = see note 1) (IC = 100 mAdc, IB = 5.0 mAdc, see note 2) BaseEmitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) BaseEmitter On Voltage (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE BC559B BC559C/560C BC559B BC559C/560C VCE(sat) VBE(sat) VBE(on) 0.55 0.52 0.55 0.62 0.7 0.075 0.3 0.25 1.1 0.25 0.6 Vdc Vdc 100 100 180 380 150 270 290 500 460 800 Vdc
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz) BC559B BC559C/BC560C NF1 NF2 fT Ccbo hfe 240 450 330 600 0.5 500 900 dB 2.0 10 250 2.5 MHz pF
Noise Figure (IC = 200 Adc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz) (IC = 200 Adc, VCE = 5.0 Vdc, RS = 100 k, f = 1.0 kHz, f = 200 kHz) NOTES: 1. IB is value for which IC = 11 mA at VCE = 1.0 V. 2. Pulse test = 300 s Duty cycle = 2%.
2129
100 80 60 40 30 20
VCE = 10 V TA = 25C
50
1.0
20
40
Figure 4. Capacitance
170 160
140
130
120 0.1
0.2
5.0
10
2130
MOTOROLA
Darlington Transistors
NPN Silicon
COLLECTOR 1 BASE 2
BC618
EMITTER 3
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 55 80 12 1.0 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/C Watts mW/C C CASE 2904, STYLE 17 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 55 80 12 50 50 50 Vdc Vdc Vdc nAdc nAdc nAdc
2131
BC618
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Collector Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) Base Emitter Saturation Voltage (IC = 200 mA, IB = 0.2 mA) DC Current Gain (IC = 100 A, VCE = 5.0 Vdc) (IC = 10 mA, VCE = 5.0 Vdc) (IC = 200 mA, VCE = 5.0 Vdc) (IC = 1.0 A, VCE = 5.0 Vdc) VCE(sat) VBE(sat) hFE 2000 4000 10000 4000 50000 1.1 1.6 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 500 mA, VCE = 5.0 Vdc, P = 100 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 5.0 V, IE = 0, f = 1.0 MHz) fT Cob Cib 150 4.5 5.0 7.0 9.0 MHz pF pF
RS
in en
IDEAL TRANSISTOR
2132
BC618
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
500 200 en, NOISE VOLTAGE (nV) 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 A 10 A
IC = 1.0 mA
200
100 70 50 30 20
BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 A 10 10 A 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 A
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2133
BC618
SMALLSIGNAL CHARACTERISTICS
20 TJ = 25C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALLSIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
2.0
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
Figure 6. Capacitance
200 k TJ = 125C hFE, DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
25C
1.5
1.0
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.0
25C TO 125C
2.0
0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
500
2134
BC618
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
SINGLE PULSE ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25C TC = 25C
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP
2135
MOTOROLA
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC635 45 45 BC637 60 60 5.0 0.5 625 5.0 1.5 12 55 to +150 BC639 80 80 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) V(BR)CEO BC635 BC637 BC639 V(BR)CBO BC635 BC637 BC639 V(BR)EBO ICBO 100 10 nAdc Adc 45 60 80 5.0 Vdc 45 60 80 Vdc Vdc
Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125C) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2136
ON CHARACTERISTICS(1)
DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 VCE(sat) VBE(on) 25 40 40 40 25 250 160 160 0.5 1.0 Vdc Vdc
(IC = 500 mA, VCE = 2.0 V) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) BaseEmitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT Cob Cib 200 7.0 50 MHz pF pF
2137
100
50
20
300 500
1000
0.8
100
VCE = 2 V
0.6
0.4
50
0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 0 1 10 100 IC, COLLECTOR CURRENT (mA) 1000
0.2
1.0 VCE = 2 VOLTS T = 0C to +100C 1.6 V for VBE 2.2 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000
2138
MOTOROLA
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BC636 45 45 BC638 60 60 5.0 0.5 625 5.0 1.5 12 55 to +150 BC640 80 80 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage* (IC = 10 mAdc, IB = 0) V(BR)CEO BC636 BC638 BC640 V(BR)CBO BC636 BC638 BC640 V(BR)EBO ICBO 100 10 nAdc Adc 45 60 80 5.0 Vdc 45 60 80 Vdc Vdc
Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125C) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
2139
ON CHARACTERISTICS(1)
DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC636 BC638 BC640 VCE(sat) VBE(on) 25 40 40 40 25 0.25 0.5 250 160 160 0.5 1.0 Vdc Vdc
(IC = 500 mA, VCE = 2.0 V) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) BaseEmitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT Cob Cib 150 9.0 110 MHz pF pF
2140
50
20
0.8
100
VCE = 2 V
0.6
0.4
50
0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 1000 0 1 100 10 IC, COLLECTOR CURRENT (mA) 1000
0.2
1.0 VCE = 2 VOLTS T = 0C to +100C 1.6 V for VBE 2.2 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000
2141
MOTOROLA
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit
DEVICE MARKING
BC80716LT1 = 5A; BC80725LT1 = 5B; BC80740LT1 = 5C
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA) Collector Emitter Breakdown Voltage (VEB = 0, IC = 10 A) Emitter Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TJ = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)EBO ICBO 100 5.0 nA A 45 50 5.0 V V V
REV 1
2142
ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC80716 BC80725 BC80740 VCE(sat) VBE(on) 100 160 250 40 250 400 600 0.7 1.2 V V
(IC = 500 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) Base Emitter On Voltage (IC = 500 mA, IB = 1.0 V)
2143
MOTOROLA
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 45 50 5.0 500 Unit V V V mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit
DEVICE MARKING
BC81716LT1 = 6A; BC81725LT1 = 6B; BC81740LT1 = 6C
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA) Collector Emitter Breakdown Voltage (VEB = 0, IC = 10 A) Emitter Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CES V(BR)EBO ICBO 100 5.0 nA A 45 50 5.0 V V V
REV 2
2144
ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC81716 BC81725 BC81740 VCE(sat) VBE(on) 100 160 250 40 250 400 600 0.7 1.2 V V
(IC = 500 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) Base Emitter On Voltage (IC = 500 mA, VCE = 1.0 V)
2145
MOTOROLA
NPN Silicon
1 BASE
COLLECTOR 3
2 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 BC850 45 50 6.0 100 BC848 BC849 30 30 5.0 100 Unit V V V mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit
1 2 3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
DEVICE MARKING
BC846ALT1 = 1A; BC846BLT1 = 1B; BC847ALT1 = 1E; BC847BLT1 = 1F; BC847CLT1 = 1G; BC848ALT1 = 1J; BC848BLT1 = 1K; BC848CLT1 = 1L
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage BC846A,B (IC = 10 mA) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector Emitter Breakdown Voltage BC846A,B (IC = 10 A, VEB = 0) BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C Collector Base Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 1.0 mA) BC846A,B BC847A,B,C, BC850B,C BC848A,B,C, BC849B,C BC846A,B BC847A,B,C BC848A,B,C, BC849B,C, BC850B,C V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 15 5.0 V
V(BR)CES
V(BR)CBO
V(BR)EBO
Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
ICBO
nA A
REV 1
2146
ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B, BC849B, BC850B BC847C, BC848C, BC849C, BC850C VCE(sat) VBE(sat) VBE(on) hFE 110 200 420 580 90 150 270 180 290 520 0.7 0.9 660 220 450 800 0.25 0.6 700 770 V V mV
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3
0.4
0.02
10
20
0.2
100
Figure 3. Collector Saturation Region Motorola SmallSignal Transistors, FETs and Diodes Device Data
BC847/BC848
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C 400 300 200
VCE = 10 V TA = 25C
1.0
20
40
1.0
30
50
Figure 5. Capacitances
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TA = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4
0.2 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200
Figure 8. On Voltage
2.0 TA = 25C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA VB, TEMPERATURE COEFFICIENT (mV/ C)
1.0
1.4
0.8
0.4
2.6
3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200
0.02
0.05
0.1
5.0
10
20
2148
BC846
40 TA = 25C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob
500
VCE = 5 V TA = 25C
200 100 50
20
2.0
0.1
0.2
50
100
2149
MOTOROLA
NPN Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC70 which is designed for low power surface mount applications.
COLLECTOR 3 1 BASE 2 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC846 65 80 6.0 100 BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc
1 2 3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Junction and Storage Temperature Symbol PD RqJA PD TJ, Tstg Max 150 833 2.4 55 to +150 Unit mW C/W mW/C C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F; BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA) Collector Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector Base Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series BC846 Series BC847 Series BC848 Series V(BR)CEO 65 45 30 80 50 30 80 50 30 6.0 6.0 5.0 15 5.0 V
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
nA A
2150
ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C BC846A, BC847A, BC848A BC846B, BC847B, BC848B BC847C, BC848C VCE(sat) VBE(sat) VBE(on) hFE 110 200 420 580 90 150 270 180 290 520 0.7 0.9 660 220 450 800 0.25 0.6 700 770 V V mV
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10
0.4
0.02
10
20
0.2
100
2151
BC847/BC848
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C 400 300 200
VCE = 10 V TA = 25C
1.0
20
40
1.0
30
50
Figure 5. Capacitances
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TA = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4
0.2 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200
Figure 8. On Voltage
2.0 TA = 25C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA VB, TEMPERATURE COEFFICIENT (mV/ C)
1.0
1.4
0.8
0.4
2.6
3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200
0.02
0.05
0.1
5.0
10
20
2152
BC846
40 TA = 25C C, CAPACITANCE (pF) 20 Cib 10 6.0 4.0 Cob
500
VCE = 5 V TA = 25C
200 100 50
20
2.0
0.1
0.2
50
100
2153
MOTOROLA
PNP Silicon
1 BASE
BC856ALT1,BLT1
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC856 65 80 5.0 100 BC857 45 50 5.0 100 BC858 30 30 5.0 100
2 EMITTER Unit V V V mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit
1 2 3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
DEVICE MARKING
BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F; BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA) Collector Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector Base Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO 65 45 30 80 50 30 80 50 30 5.0 5.0 5.0 15 4.0 V
V(BR)CES
V(BR)CBO
V(BR)EBO
Collector Cutoff Current (VCB = 30 V) Collector Cutoff Current (VCB = 30 V, TA = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
ICBO
nA A
REV 1
2154
ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) BC856A, BC857A, BC585A BC856A, BC857A, BC858A BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C VCE(sat) VBE(sat) VBE(on) 0.6 0.75 0.82 0.7 0.9 V 0.3 0.65 V hFE 125 220 420 90 150 270 180 290 520 250 475 800 V
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V)
2155
BC857/BC858
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10
100 200
0 0.1 0.2
2.0 VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOREMITTER VOLTAGE (V) TA = 25C 1.6
0.8
0.4
0.02
10 20
0.2
100
3.0 2.0
1.0
2.0
4.0 6.0
10
20 30 40
1.0
2.0 3.0
5.0
10
20
30
50
Figure 5. Capacitances
2156
BC856
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5.0 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4
0.2 0.2 0 0.2 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (AMP) 0.5 50 100 200 5.0 10 20 1.0 2.0 IC, COLLECTOR CURRENT (mA)
0.1 0.2
Figure 8. On Voltage
1.0
1.4
1.2
1.8
VB for VBE
55C to 125C
0.8
2.2
0.4 TJ = 25C 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20
2.6
3.0 0.2
0.5 1.0
100 200
500
VCE = 5.0 V
200 100 50
20
50 100
2157
D = 0.5 0.2 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZJC(t) = r(t) RJC RJC = 83.3C/W MAX ZJA(t) = r(t) RJA RJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 500 1.0 k 2.0 k 5.0 k 10 k
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
200 1s IC, COLLECTOR CURRENT (mA) 100 50 TA = 25C TJ = 25C 3 ms The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.
10 5.0
BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 5.0 10 30 45 65 100 VCE, COLLECTOREMITTER VOLTAGE (V)
2.0 1.0
2158
MOTOROLA
PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC70 which is designed for low power surface mount applications.
COLLECTOR 3 1 BASE 2 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BC856 65 80 5.0 100 BC857 45 50 5.0 100 BC858 30 30 5.0 100 Unit V V V mAdc
1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board, (1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 55 to +150 Unit mW C/W C
DEVICE MARKING
BC856AWT1 = 3A; BC856BWT1 = 3B; BC857AWT1 = 3E; BC857BWT1 = 3F; BC858AWT1 = 3J; BC858BWT1 = 3K; BC858CWT1 = 3L
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mA) Collector Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector Base Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 1.0 mA) BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO 65 45 30 80 50 30 80 50 30 5.0 5.0 5.0 15 4.0 V
V(BR)CES
V(BR)CBO
V(BR)EBO
Collector Cutoff Current (VCB = 30 V) Collector Cutoff Current (VCB = 30 V, TA = 150C) 1. FR5 = 1.0 x 0.75 x 0.062 in
Preferred devices are Motorola recommended choices for future use and best overall value.
ICBO
nA A
2159
ON CHARACTERISTICS
DC Current Gain (IC = 10 A, VCE = 5.0 V) BC856A, BC857A, BC585A BC856A, BC857A, BC858A BC858C BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C VCE(sat) VBE(sat) VBE(on) 0.6 0.75 0.82 0.7 0.9 V 0.3 0.65 V hFE 125 220 420 90 150 270 180 290 520 250 475 800 V
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) Base Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V)
2160
BC857/BC858
2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS)
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mAdc) 50 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10
100 200
0 0.1 0.2
2.0 VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOREMITTER VOLTAGE (V) TA = 25C 1.6
0.8
0.4
0.02
10 20
0.2
100
3.0 2.0
1.0
2.0
4.0 6.0
10
20 30 40
1.0
2.0 3.0
5.0
10
20
30
50
Figure 5. Capacitances
2161
BC856
1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5.0 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4
0.2 0.2 0 0.2 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (AMP) 0.5 50 100 200 5.0 10 20 1.0 2.0 IC, COLLECTOR CURRENT (mA)
0.1 0.2
Figure 8. On Voltage
1.0
1.4
1.2
1.8
VB for VBE
55C to 125C
0.8
2.2
0.4 TJ = 25C 0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20
2.6
3.0 0.2
0.5 1.0
100 200
500
VCE = 5.0 V
200 100 50
20
50 100
2162
D = 0.5 0.2 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 ZJC(t) = r(t) RJC RJC = 83.3C/W MAX ZJA(t) = r(t) RJA RJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 500 1.0 k 2.0 k 5.0 k 10 k
SINGLE PULSE
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
200 1s IC, COLLECTOR CURRENT (mA) 100 50 TA = 25C TJ = 25C 3 ms The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.
10 5.0
BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 5.0 10 30 45 65 100 VCE, COLLECTOREMITTER VOLTAGE (V)
2.0 1.0
2163
MOTOROLA
BCP53T1
Motorola Preferred Device
BASE 1 EMITTER 3
2 3
DEVICE MARKING
AH
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath Symbol RJA TL Max 83.3 260 10 Unit C/W C Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2164
BCP53T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 Adc, RBE = 1.0 kohm) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO ICBO IEBO 100 80 100 5.0 100 10 Vdc Vdc Vdc Vdc nAdc Adc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) hFE 25 40 25 VCE(sat) VBE(on) 250 0.5 1.0 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) fT 50 MHz
200
VCE = 2 V 100 50
100
50
20
300 500
1000
20
1000
0.6
V(BE)on @ VCE = 2 V
C, CAPACITANCE (pF)
V(BE)sat @ IC/IB = 10
Cib
0.4
Cob 2 4 6 8 10 12 14 16 18 20
V, VOLTAGE (VOLTS)
Figure 3. Saturation and ON Voltages Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
BCP56T1 SERIES
Motorola Preferred Device
COLLECTOR 2,4
1 2 3
DEVICE MARKING
BCP56T1 = BH BCP56-10T1 = BK BCP56-16T1 = BL
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RJA TL Max 83.3 260 10 Unit C/W C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2166
BCP56T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 100 80 5.0 100 10 Vdc Vdc Vdc nAdc Adc
ON CHARACTERISTICS (2)
DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) (IC = 150 mA, VCE = 2.0 V) hFE All Part Types BCP56T1 BCP56-10T1 BCP56-16T1 All Types VCE(sat) VBE(on) 25 40 63 100 25 250 160 250 0.5 1.0 Vdc Vdc
(IC = 500 mA, VCE = 2.0 V) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% fT 130 MHz
2167
BCP56T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
1000
10
100
1000
1000
100
20
10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
10 1.0
1000
4.0 0.1
Figure 3. Capacitance
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4
0.6
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 200 500
0.2 0 0.05
0.1
0.2
20
50
Figure 4. On Voltages
2168
MOTOROLA
BCP68T1
Motorola Preferred Device
2 3
BASE 1 EMITTER 3
DEVICE MARKING
CA
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RJA TL Max 83.3 260 10 Unit C/W C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2169
BCP68T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CES V(BR)CEO V(BR)EBO ICBO IEBO 25 20 5.0 10 10 Vdc Vdc Vdc Adc Adc
ON CHARACTERISTICS (2)
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE 50 85 60 VCE(sat) VBE(on) 375 0.5 1.0 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% fT 60 MHz
30
10
1000
2170
BCP68T1
TYPICAL ELECTRICAL CHARACTERISTICS
1.0 TJ = 25C VBE(sat) @ IC/IB = 10 Cib, CAPACITANCE (pF) 80 TJ = 25C 70
0.6
60
0.4
50
0.2
40
30
1.0
5.0
Figure 3. On Voltage
Figure 4. Capacitance
25
0.8
1.2
15
10
2.4
5.0
20
2.8 1.0
1000
Figure 5. Capacitance
0.6
= 1000 mA I C = 10 mA = 100 mA
0.4
= 50 mA
0.2
= 500 mA
0 0.01
0.1
100
2171
MOTOROLA
BCP69T1
Motorola Preferred Device
2 3
BASE 1 EMITTER 3
DEVICE MARKING
CE
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath Symbol RJA TL Max 83.3 260 10 Unit C/W C Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2172
BCP69T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CES V(BR)CEO V(BR)EBO ICBO IEBO 25 20 5.0 10 10 Vdc Vdc Vdc Adc Adc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc) hFE 50 85 60 VCE(sat) VBE(on) 375 0.5 1.0 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc) fT 60 MHz
20 10
1000
30 10
1000
TJ = 25C 120
0.6
80 Cib 40 Cob 0 Cob Cib 5.0 1.0 1.0 2.0 1.5 3.0 2.0 4.0 2.5 5.0
0.4
0.2
0 1.0
Figure 4. Capacitances Motorola SmallSignal Transistors, FETs and Diodes Device Data 2173
MOTOROLA
BCW29LT1 BCW30LT1
3 1
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BCW29LT1 = C1; BCW30LT1 = C2
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IE = 0) CollectorEmitter Breakdown Voltage (IC = 100 Adc, VEB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IC = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 100 10 nAdc Adc 32 32 32 5.0 Vdc Vdc Vdc Vdc
2174
BCW29LT1 BCW30LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE BCW29 BCW30 VCE(sat) VBE(on) 0.6 0.75 0.3 Vdc 120 215 260 500 Vdc
SMALLSIGNAL CHARACTERISTICS
Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) Cobo NF 10 7.0 dB pF
2175
BCW29LT1 BCW30LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 3.0 2.0 1.0 mA 100 A 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 A 100 A 30 A 10 A IC = 1.0 mA
BANDWIDTH = 1.0 Hz RS
BANDWIDTH = 1.0 Hz
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A)
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 5. Wideband 2176 Motorola SmallSignal Transistors, FETs and Diodes Device Data
BCW29LT1 BCW30LT1
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C 25C
200
55C 100 80 60 40 0.003 0.005 BCW29LT1 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
1.0 IC, COLLECTOR CURRENT (mA) TA = 25C BCW29LT1 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
100
0.6
0.4
40
100 A 50 A
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 55C to 25C 0.8 25C to 125C 1.6 25C to 125C
55C to 25C
2.4 0.1
50
100
Figure 9. On Voltages
2177
BCW29LT1 BCW30LT1
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 1.0 ts
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 BCW29LT1 hfe 200 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C BCW29LT1 hfe 200 @ IC = 1.0 mA
2178
BCW29LT1 BCW30LT1
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.05
0.1
0.2
0.5
1.0
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICEO
4 0
2 0
2179
MOTOROLA
BCW33LT1
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 20 30 5.0 100 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BCW33LT1 = D3
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 32 Vdc, IE = 0) (VCB = 32 Vdc, IE = 0, TA = 100C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CBO V(BR)EBO ICBO 100 10 nAdc Adc 32 32 5.0 Vdc Vdc Vdc
2180
BCW33LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) Base Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE 420 VCE(sat) VBE(on) 0.55 0.70 0.25 Vdc 800 Vdc
2181
BCW33LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 A BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 A 10 A IC = 1.0 mA 300 A 100 A BANDWIDTH = 1.0 Hz RS
100 A
30 A
BANDWIDTH = 1.0 Hz
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 7. Wideband 2182 Motorola SmallSignal Transistors, FETs and Diodes Device Data
BCW33LT1
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (mA) BCW33LT1 TJ = 25C 100
0.8 IC = 1.0 mA 10 mA 50 mA
0.6
100 mA
60 200 A 40 100 A 20
0.4
0.2
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
1.4
1.6 0.8
2183
BCW33LT1
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts
t, TIME (ns)
VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100
50 70
100
500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
D = 0.5
0.2
FIGURE 19A
DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
0.05
0.1
0.2
0.5
1.0
2184
BCW33LT1
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO
4 0
2 0
Figure 16A.
2185
MOTOROLA
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BCW60ALT1 = AA, BCW60BLT1 = AB, BCW60DLT1 = AD
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES IEBO 20 20 20 nAdc Adc nAdc 32 5.0 Vdc Vdc
2186
ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) hFE BCW60A BCW60B BCW60D BCW60A BCW60B BCW60D BCW60A BCW60B BCW60D hfe BCW60A BCW60B BCW60D VCE(sat) VBE(sat) 0.7 0.6 VBE(on) 0.6 0.75 1.05 0.85 Vdc 0.55 0.35 Vdc 125 175 350 250 350 700 Vdc 20 30 100 120 175 380 60 70 100 220 310 630
Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 10 mAdc, IB = 0.25 mAdc) Base Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 50 mAdc, IB = 0.25 mAdc) Base Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 10 mAdc, IB1 = 1.0 mAdc) TurnOff Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 ) ton toff 800 150 ns ns
2187
100 A
30 A
BANDWIDTH = 1.0 Hz
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 7. Wideband 2188 Motorola SmallSignal Transistors, FETs and Diodes Device Data
TJ = 125C
200
25C
55C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100
0.6
60 200 A 40 100 A 20
0.4
0.2
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
1.4
1.6 0.8
2189
t, TIME (ns)
VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100
50 70
100
500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA
2190
0.2
0.05
0.1
0.2
0.5
1.0
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO
4 0
2 0
Figure 19A.
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms
100 s 10 s 1.0 s
TC = 25C TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
dc
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
40
Figure 20.
2191
MOTOROLA
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BCW61BLT1 = BB, BCW61CLT1 = BC, BCW61DLT1 = BD
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES 20 20 nAdc Adc 32 5.0 Vdc Vdc
2192
ON CHARACTERISTICS
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) hFE BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D hfe BCW61B BCW61C BCW61D VCE(sat) VBE(sat) 0.68 0.6 VBE(on) 0.6 0.75 1.05 0.85 Vdc 0.55 0.25 Vdc 175 250 350 350 500 700 Vdc 30 40 100 140 250 380 80 100 100 310 460 630
Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 10 mAdc, IB = 0.25 mAdc) Base Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 10 mAdc, IB = 0.25 mAdc) Base Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 10 mAdc, IB1 = 1.0 mAdc) TurnOff Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990 ) ton toff 800 150 ns ns
2193
BANDWIDTH = 1.0 Hz RS
BANDWIDTH = 1.0 Hz
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A)
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 5. Wideband 2194 Motorola SmallSignal Transistors, FETs and Diodes Device Data
0.6
0.4
40
100 A 50 A
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 55C to 25C 0.8 25C to 125C 1.6 25C to 125C
55C to 25C
2.4 0.1
50
100
Figure 8. On Voltages
2195
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
D = 0.5
0.2
FIGURE 19
DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
0.05
0.1
0.2
0.5
1.0
2196
4 0
2 0
2197
MOTOROLA
BCW65ALT1
3 1
2 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 32 60 5.0 800 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BCW65ALT1 = EA
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc, IE = 0) (VCE = 32 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CES V(BR)EBO ICES IEBO 20 20 20 nAdc Adc nAdc 32 60 5.0 Vdc Vdc Vdc
2198
BCW65ALT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) hFE 35 75 100 35 VCE(sat) VBE(sat) 2.0 0.7 0.3 Vdc 220 250 Vdc
SWITCHING CHARACTERISTICS
TurnOn Time (IB1 = IB2 = 15 mAdc) TurnOff Time (IC = 150 mAdc, RL = 150 ) ton toff 100 400 ns ns
2199
MOTOROLA
BCW68GLT1
3 1 2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 45 60 5.0 800 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
BCW68GLT1 = DH
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 10 Adc, VEB = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCE= 45 Vdc, IE = 0) (VCE= 45 Vdc, IB = 0, TA = 150C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CES V(BR)EBO ICES IEBO 20 10 20 nAdc Adc nAdc 45 60 5.0 Vdc Vdc Vdc
2200
BCW68GLT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 1.0 Vdc) CollectorEmitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc) BaseEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) hFE 120 160 60 VCE(sat) VBE(sat) 400 1.5 2.0 Vdc Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB= 0.5 Vdc, IC = 0, f = 1.0 MHz) Noise Figure (IC= 0.2 mAdc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz) fT Cobo Cibo NF 100 18 105 10 MHz pF pF dB
2201
MOTOROLA
BCW69LT1 BCW70LT1
3 1
2 EMITTER
MAXIMUM RATINGS
Rating CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VEBO IC Value 45 5.0 100 Unit Vdc Vdc mAdc
DEVICE MARKING
BCW69LT1 = H1; BCW70LT1 = H2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 100 Adc, VEB = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 100C) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CES V(BR)EBO ICBO 100 10 nAdc Adc 45 50 5.0 Vdc Vdc Vdc
2202
BCW69LT1 BCW70LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE BCW69 BCW70 VCE(sat) VBE(on) 120 215 0.6 260 500 0.3 0.75 Vdc Vdc
CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) BaseEmitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
Output Capacitance (IE = 0, VCB = 10 Vdc, f = 1.0 MHz) Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) Cobo NF 7.0 10 pF dB
2203
BCW69LT1 BCW70LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 3.0 2.0 1.0 mA 100 A 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 A 100 A 30 A 10 A IC = 1.0 mA
BANDWIDTH = 1.0 Hz RS
BANDWIDTH = 1.0 Hz
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A)
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 5. Wideband 2204 Motorola SmallSignal Transistors, FETs and Diodes Device Data
BCW69LT1 BCW70LT1
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 1.0 TA = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA) 100
0.6
0.4
40
100 A 50 A
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 55C to 25C 0.8 25C to 125C 1.6 25C to 125C
55C to 25C
2.4 0.1
50
100
Figure 8. On Voltages
2205
BCW69LT1 BCW70LT1
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 1.0 ts
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 16 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
0.05
0.1
0.2
0.5
1.0
2206
BCW69LT1 BCW70LT1
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICEO
4 0
2 0
2207
MOTOROLA
BCW72LT1
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 45 50 5.0 100 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BCW72LT1 = K2
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, VEB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 100C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 100 10 nAdc mAdc 45 45 50 5.0 Vdc Vdc Vdc Vdc
2208
BCW72LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 2.5 mAdc) Base Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc) Base Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc) hFE 200 VCE(sat) VBE(sat) VBE(on) 0.6 0.75 0.85 Vdc 0.21 0.25 Vdc 450 Vdc
100 A
30 A
Figure 3. Noise Voltage Motorola SmallSignal Transistors, FETs and Diodes Device Data
BCW72LT1
NOISE FIGURE CONTOURS
(VCE = 5.0 Vdc, TA = 25C)
500 k RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 500 700 1k BANDWIDTH = 1.0 Hz 1M 500 k 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A)
BANDWIDTH = 1.0 Hz
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 7. Wideband
2210
BCW72LT1
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C
200
25C
55C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100
0.6
60 200 A 40 100 A 20
0.4
0.2
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
1.4
1.6 0.8
2211
BCW72LT1
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts
t, TIME (ns)
VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100
50 70
100
500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA
2212
BCW72LT1
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.05
0.1
0.2
0.5
1.0
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO
4 0
2 0
Figure 19A.
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms
100 s 10 s 1.0 s
TC = 25C TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
dc
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
40
Figure 20.
2213
MOTOROLA
MAXIMUM RATINGS
Value Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC BCX17LT1 BCX19LT1 45 50 5.0 500 BCX18LT1 BCX20LT1 25 30 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
BCX17LT1 = T1; BCX18LT1 = T2; BCX19LT1 = U1; BCX20LT1 = U2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
2214
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CEO BCX17, 19 BCX18, 20 V(BR)CES BCX17, 19 BCX18, 20 ICBO IEBO 100 5.0 10 nAdc Adc Adc 50 30 45 25 Vdc Vdc
ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) CollectorEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) BaseEmitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) hFE 100 70 40 VCE(sat) VBE(on) 600 0.62 1.2 Vdc Vdc
2215
MOTOROLA
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 45 45 5.0 200 Unit Vdc Vdc Vdc mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BCX70GLT1 = AG; BCX70JLT1 = AJ; BCX70KLT1 = AK
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 2.0 mAdc, IE= 0) Emitter Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) Collector Cutoff Current (VCE = 32 Vdc) (VCE = 32 Vdc, TA = 150C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICES IEBO 20 20 20 nAdc mAdc nAdc 45 5.0 Vdc Vdc
2216
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K BCX70G BCX70J BCX70K VCE(sat) VBE(sat) 0.7 0.6 VBE(on) 0.55 1.05 0.85 0.75 Vdc 0.55 0.35 Vdc 40 100 120 250 380 60 90 100 220 460 630 Vdc
Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 10 mAdc, IB = 0.25 mAdc) Base Emitter Saturation Voltage (IC = 50 mAdc, IB = 1.25 mAdc) (IC = 50 mAdc, IB = 0.25 mAdc) Base Emitter On Voltage (IC = 2.0 mAdc, VCE = 5.0 Vdc)
Noise Figure (IC = 0.2 mAdc, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 10 mAdc, IB1 = 1.0 mAdc) TurnOff Time (IB2 = 1.0 mAdc, VBB = 3.6 Vdc, R1 = R2 = 5.0 k, RL = 990) ton toff 150 800 ns ns
2217
100 A
30 A
BANDWIDTH = 1.0 Hz
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 7. Wideband 2218 Motorola SmallSignal Transistors, FETs and Diodes Device Data
TJ = 125C
200
25C
55C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100
0.6
60 200 A 40 100 A 20
0.4
0.2
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
1.4
1.6 0.8
2219
t, TIME (ns)
VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100
50 70
100
500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA
2220
0.2
0.05
0.1
0.2
0.5
1.0
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO
4 0
2 0
Figure 19A.
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms
100 s 10 s 1.0 s
TC = 25C TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
dc
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
40
Figure 20.
2221
MOTOROLA
BDB01C
1 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD Value 80 80 5.0 0.5 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc Adc Watt mW/C Watt mW/C C
PD
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 80 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = 5.0 V) V(BR)CEO 80 ICBO IEBO 100 0.01 nAdc Vdc
mAdc
REV 1
2222
BDB01C
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 2.0 V) Collector Emitter Saturation Voltage(1) (IC = 1000 mA, IB = 100 mA) Collector Emitter On Voltage(1) (IC = 1000 mA, VCE = 1.0 V) hFE 40 25 VCE(sat) VBE(on) 400 0.7 1.2 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cob 50 30 MHz pF
400 TJ = 125C hFE , DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500
VCE = 1.0 V
0.6
0.4
0.4
0.2
0 0.05
0.1
0.2
10
20
50
0 0.5
1.0
2.0
200
500
Figure 3. On Voltages
2223
BDB01C
VB, TEMPERATURE COEFFICIENT (mV/C) 0.8 1.2 C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25C
20
2.0
2.4
10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
2.8 0.5
1.0
2.0
200
500
4.0 0.1
Figure 5. Capacitance
300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25C DUTY CYCLE 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25C TC = 25C 1.0 s 1.0 ms 100 s
100 70 50
dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN BDB01C LIMIT 2.0 5.0 10 20 45 60 80 100 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2224
MOTOROLA
BDB02C
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD Value 80 80 5.0 0.5 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc Adc Watt mW/C Watt mW/C C CASE 2905, STYLE 1 TO92 (TO226AE)
PD
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 80 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = 5.0 V) V(BR)CEO 80 ICBO IEBO 0.1 100 nAdc Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 2.0 V) Collector Emitter Saturation Voltage(1) (IC = 1000 mA, IB = 100 mA) Collector Emitter On Voltage(1) (IC = 1000 mA, VCE = 1.0 V) hFE 40 25 VCE(sat) VBE(on) 400 0.7 1.2 Vdc Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width REV 1 fT Cob 50 30 MHz pF
2225
BDB02C
400 TJ = 125C hFE, DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5 0.7
VCE = 1.0 V
1.0
2.0
3.0
5.0
50
70
100
200
300
500
0.6 IC = 10 mA 0.4
50 mA
100 mA
250 mA
500 mA
0.4
0.2
0 0.05 0.1
0.2
10
20
50
0 0.5 1.0
2.0
500
Figure 3. On Voltages
2.0
2.4
10 7.0
Cobo
2.8 0.5
1.0
2.0
500
5.0 0.1
0.2
50 100
Figure 5. Capacitance
2226
BDB02C
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz 300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25C DUTY CYCLE 10% 2 k 1 k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 BDB02C 2.0 5.0 10 20 45 60 80 100 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) TA = 25C TC = 25C 10 s dc 1.0 ms 100 s
100 70 50
2227
MOTOROLA
BDC01D
1 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BDC01D 100 100 5.0 0.5 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc Adc Watts mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 100 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = 5.0 V) V(BR)CEO ICBO IEBO 100 0.1 100 Vdc
mAdc
nAdc
2228
BDC01D
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 2.0 V) Collector Emitter Saturation Voltage(1) (IC = 1000 mA, IB = 100 mA) Collector Emitter On Voltage(1) (IC = 1000 mA, VCE = 1.0 V) hFE 40 25 VCE(sat) VBE(on) 400 0.7 1.2 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cob 50 30 MHz pF
400 TJ = 125C hFE , DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500
VCE = 1.0 V
0.6
0.4
0.4
0.2
0 0.05
0.1
0.2
10
20
50
0 0.5
1.0
2.0
200
500
Figure 3. On Voltages
2229
BDC01D
VB, TEMPERATURE COEFFICIENT (mV/C) 0.8 1.2 C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25C
20
2.0
2.4
10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
2.8 0.5
1.0
2.0
200
500
4.0 0.1
Figure 5. Capacitance
300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25C DUTY CYCLE 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25C TC = 25C 1.0 s 1.0 ms 100 s
100 70 50
dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW05 MPSW06 10 20 60 80 100 2.0 5.0 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2230
MOTOROLA
RF Transistor
NPN Silicon
COLLECTOR 1 3 BASE 2 EMITTER
BF199
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 25 40 4.0 100 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO 25 V(BR)CBO 40 V(BR)EBO 4.0 ICBO 100 nAdc Vdc Vdc Vdc
2231
BF199
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 7.0 mAdc, VCE = 10 Vdc) BaseEmitter On Voltage (IC = 7.0 mAdc, VCE = 10 Vdc) hFE 40 VBE(on) 770 900 85 mVdc
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 4.0 mAdc, VCE = 10 Vdc, RS = 50 , f = 35 MHz) fT 400 Cre Nf 2.5 0.25 0.35 dB 750 pF MHz
2232
BF199
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 1000 700 500 300 200 100 VCE = 10 V TA = 25C BF199 10
C, CAPACITANCE (pF)
20 10
Cre @ IE = 0
100
0.1
0.2
Figure 2. Capacitances
20 10 5
45 MHz 10.7 MHz b11e 470 kHz < 0.2 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)
2 1
Figure 4. b11e
mmhos
20 10 5
10.7 MHz
200 100 50
10.7 MHz
2 1 b21e, at 470 kHz < 0.5 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)
20
Figure 5. b21e
2233
BF199
10 VCE = 10 V 5 45 MHz mmhos 2 mmhos 1 0.5 10.7 MHz 470 kHz 100 MHz 200 100 50 VCE = 10 V f = 0.47 to 45 MHz
20 10 5
0.2 0.1
200 VCE = 10 V 100 50 mhos 45 MHz 10.7 MHz 20 10 5 470 kHz 100 MHz
2234
MOTOROLA
RF Transistor
NPN Silicon
COLLECTOR 1 3 BASE 2 EMITTER
BF224
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 30 45 4.0 50 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO 30 V(BR)CBO 45 V(BR)EBO 4.0 ICBO IEBO 100 100 nAdc nAdc Vdc Vdc Vdc
2235
BF224
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 7.0 mAdc, VCE = 10 Vdc) BaseEmitter On Voltage (IC = 7.0 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 VBE(on) VCE(sat) 0.15 0.77 0.9 Vdc mVdc
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product (IC = 1.5 mAdc, VCE = 10 Vdc, f = 100 MHz) (IC = 7.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCE = 10 Vdc, IE = 0, f = 1.0 MHz) Noise Figure (IC = 1.0 mAdc, VCE = 10 Vdc, RS = 50 , f = 100 MHz) (IC = 1.0 mAdc, VCE = 10 Vdc, RS = 50 , f = 200 MHz) fT 300 Cre Nf 2.5 3.5 0.28 dB 600 850 pF MHz
2236
BF224
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 1000 700 500 300 200 100 VCE = 10 V TA = 25C BF224 10
C, CAPACITANCE (pF)
20 10
Cre @ IE = 0
100
0.1
0.2
Figure 2. Capacitances
20 10 5
45 MHz 10.7 MHz b11e 470 kHz < 0.2 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)
2 1
Figure 4. b11e
mmhos
20 10 5
10.7 MHz
200 100 50
10.7 MHz
2 1 b21e, at 470 kHz < 0.5 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)
20
Figure 5. b21e
2237
BF224
10 VCE = 10 V 5 45 MHz mmhos 2 mmhos 1 0.5 10.7 MHz 470 kHz 100 MHz 200 100 50 VCE = 10 V f = 0.47 to 45 MHz
20 10 5
0.2 0.1
200 VCE = 10 V 100 50 mhos 45 MHz 10.7 MHz 20 10 5 470 kHz 100 MHz
2238
MOTOROLA
NPN Silicon
COLLECTOR 1 3 BASE
BF240
2 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 4.0 25 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 40 40 4.0 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) BaseEmitter On Voltage (IC = 1.0 mAdc, VCE = 10 Vdc) hFE VBE(on) 65 0.65 0.7 220 0.74 Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 1.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Common Emitter Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Cre 600 0.28 0.34 MHz pF
REV 1
2239
BF240
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 1000 700 500 300 200 100 VCE = 10 V TA = 25C BF240 10
C, CAPACITANCE (pF)
20 10
Cre @ IE = 0
100
0.1
0.2
Figure 2. Capacitances
20 10 5
45 MHz 10.7 MHz b11e 470 kHz < 0.2 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)
2 1
Figure 4. b11e
mmhos
20 10 5
10.7 MHz
200 100 50
10.7 MHz
2 1 b21e, at 470 kHz < 0.5 mmhos 4 5 6 7 8 IC, COLLECTOR CURRENT (mA)
20
Figure 5. b21e
2240
BF240
10 VCE = 10 V 5 45 MHz mmhos 2 mmhos 1 0.5 10.7 MHz 470 kHz 100 MHz 200 100 50 VCE = 10 V f = 0.47 to 45 MHz
20 10 5
0.2 0.1
200 VCE = 10 V 100 50 mhos 45 MHz 10.7 MHz 20 10 5 470 kHz 100 MHz
2241
MOTOROLA
BF393
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 300 300 6.0 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB =0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO 300 V(BR)CBO 300 V(BR)EBO 6.0 ICBO IEBO 0.1 0.1 Adc Adc Vdc Vdc Vdc
(Replaces BF392/D)
2242
BF393
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 VCE(sat) VBE(sat) 2.0 2.0 Vdc Vdc
2243
BF393
200 VCE = 10 Vdc hFE, DC CURRENT GAIN TJ = +125C
100
2.0
3.0
5.0
20
30
50
70
100
100 50 C, CAPACITANCE (pF) 20 10 5.0 Ccb 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) Ceb
30 20
100
200
10 1.0
2.0
50
70 100
Figure 2. Capacitances
1.4 IC, COLLECTOR CURRENT (mA) 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1.0 2.0 5.0 10 20 MPSA43 MPSA42 50 100 TA = 25C TC = 25C 100 ms 100 s 10 s 1.0 ms
200
500
Figure 4. On Voltages
2244
MOTOROLA
BF420 BF422
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BF420 300 300 5.0 500 625 5.0 1.5 12 55 to +150 BF422 250 250 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO BF420 BF422 V(BR)CBO BF420 BF422 V(BR)EBO BF420 BF422 ICBO BF420 BF422 IEBO BF420 BF422 100 0.01 nAdc 5.0 5.0 Adc 300 250 Vdc 300 250 Vdc Vdc
2245
BF420 BF422
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE BF420 BF422 VCE(sat) VBE(sat) 2.0 0.5 Vdc 50 50 Vdc
2246
BF420 BF422
200 VCE = 10 Vdc hFE, DC CURRENT GAIN TJ = +125C
100
2.0
3.0
5.0
20
30
50
70
100
100 50 C, CAPACITANCE (pF) 20 10 5.0 Ccb 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) Ceb
30 20
100
200
10 1.0
2.0
50
70 100
Figure 2. Capacitances
1.4 IC, COLLECTOR CURRENT (mA) 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1.0 2.0 5.0 10 20 MPSA43 MPSA42 50 100 TA = 25C TC = 25C 100 ms 100 s 10 s 1.0 ms
200
500
Figure 4. On Voltages
2247
MOTOROLA
BF421 BF423
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD BF421 300 300 5.0 500 625 5.0 1.5 12 55 to +150 BF423 250 250 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
PD
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO BF421 BF423 V(BR)CBO BF421 BF423 V(BR)EBO BF421 BF423 ICBO BF421 BF423 IEBO BF421 BF423 100 0.01 nAdc 5.0 5.0 300 250 Vdc 300 250 Vdc Vdc
mAdc
2248
BF421 BF423
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 25 mA, VCE = 20 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 20 mA, IB = 2.0 mA) hFE BF421 BF423 VCE(sat) VBE(sat) 50 50 0.5 2.0 Vdc Vdc
2249
BF421 BF423
150 100 hFE, DC CURRENT GAIN +25C 70 50 55C TJ = +125C VCE = 10 Vdc
2.0 Ccb 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100200 500 1000 VR, REVERSE VOLTAGE (VOLTS)
0 1.0
2.0
50
100
Figure 2. Capacitances
100 s
200 100
BF423 50
1.5 WATT THERMAL LIMITATION @ TC = 25C 625 mW THERMAL LIMITATION @ TA = 25C
0.4
BF421
20 10
0.2
VCE(sat) @ IC/IB = 10 mA
0 1.0
2.0
50
100
5.0 3.0
BONDING WIRE LIMITATION SECOND BREAKDOWN LIMITATION TJ = 150C 100 200 300 5.0 10 20 30 50 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 4. On Voltages
2250
MOTOROLA
BF493S
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 350 350 6.0 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 250 Vdc) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 250 Vdc, IE = 0, TA = 25C) (VCB = 250 Vdc, IE = 0, TA = 100C) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICES IEBO ICBO 0.005 1.0 350 350 6.0 10 0.1 Vdc Vdc Vdc nAdc
mAdc mAdc
2251
BF493S
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter On Voltage (IC = 20 mA, IB = 2.0 mA) hFE 25 40 VCE(sat) VBE(sat) 2.0 2.0 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) CommonEmitter Feedback Capacitance (VCB = 100 Vdc, IE = 0, f = 1.0 MHz) fT Cre 50 1.6 MHz pF
2252
BF493S
150 100 hFE, DC CURRENT GAIN +25C 70 50 55C TJ = +125C VCE = 10 Vdc
2.0 Ccb 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100200 500 1000 VR, REVERSE VOLTAGE (VOLTS)
0 1.0
2.0
50
100
Figure 2. Capacitances
100 s
200 100
MPSA93 50
1.5 WATT THERMAL LIMITATION @ TC = 25C 625 mW THERMAL LIMITATION @ TA = 25C
0.4
MPSA92
20 10
0.2
VCE(sat) @ IC/IB = 10 mA
0 1.0
2.0
50
100
5.0 3.0
BONDING WIRE LIMITATION SECOND BREAKDOWN LIMITATION TJ = 150C 100 200 300 5.0 10 20 30 50 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 4. On Voltages
2253
MOTOROLA
BF720T1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation up to TA = 25C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VCER VEBO IC PD Tstg TJ Value 300 300 300 5.0 100 1.5 65 to +150 150 Unit Vdc Vdc Vdc Vdc mAdc Watts C C
1 2 3
DEVICE MARKING
DC
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction-to-Ambient(1) Symbol RJA Max 83.3 Unit C/W
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 100 Adc, RBE = 2.7 k) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 250 Vdc, RBE = 2.7 k) (VCE = 200 Vdc, RBE = 2.7 k, TJ = 150C) V(BR)CEO V(BR)CBO V(BR)CER V(BR)EBO ICBO ICER 50 10 nAdc Adc 300 300 300 5.0 10 Vdc Vdc Vdc Vdc nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2254
BF720T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 25 mAdc, VCE = 20 Vdc) Collector-Emitter Saturation Voltage (IC = 30 mAdc, IB = 5.0 mAdc) hFE VCE(sat) 50 0.6 Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 35 MHz) Feedback Capacitance (VCE = 30 Vdc, IC = 0, f = 1.0 MHz) fT Cre 60 1.6 MHz pF
2255
MOTOROLA
BF721T1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation up to TA = 25C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VCER VEBO IC PD Tstg TJ Value 300 300 300 5.0 100 1.5 65 to +150 150 Unit Vdc Vdc Vdc Vdc mAdc Watts C C
1 2 3
DEVICE MARKING
DF
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RJA Max 83.3 Unit C/W
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 100 Adc, RBE = 2.7 k) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 250 Vdc, RBE = 2.7 k) (VCE = 200 Vdc, RBE = 2.7 k, TJ = 150C) V(BR)CEO V(BR)CBO V(BR)CER V(BR)EBO ICBO ICER 50 10 nAdc Adc 300 300 300 5.0 10 Vdc Vdc Vdc Vdc nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
2256
BF721T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (VCE = 25 mAdc, VCE = 20 Vdc) Collector-Emitter Saturation Voltage (IC = 30 mAdc, IB = 5.0 mAdc) hFE 50
VCE(sat)
0.8
Vdc
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (VCE = 10 Vdc, IC = 10 mAdc, f = 35 MHz) Feedback Capacitance (VCE = 30 Vdc, IC = 0, f = 1.0 MHz) fT Cre 60 1.6 MHz pF
2257
MOTOROLA
BF844
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 400 450 6.0 300 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 400 Vdc, IE = 0) Collector Cutoff Current (VCE = 400 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO 400 450 450 6.0 0.1 500 0.1 Vdc Vdc Vdc Vdc Adc nAdc Adc
2258
BF844
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 50 45 20 VCE(sat) VBE(sat) 0.4 0.5 0.75 0.75 Vdc 200 Vdc
DYNAMIC CHARACTERISTICS
High Frequency Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) TurnOn Time (VCC = 150 Vdc, VBE(off) = 4.0 V, IC = 30 mAdc, IB1 = 3.0 mAdc) TurnOff Time (VCC = 150 Vdc, IC = 30 mAdc, IB1 = IB2 = 3.0 mAdc) 1. Pulse Test: Pulse Width |hfe| Cob Cib ton toff 1.0 6.0 110 0.6 10 pF pF s s
2259
BF844
160 140 hFE, DC CURRENT GAIN 120 100 80 60 40 55C 20 1.0 2.0 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 200 300 25C TA = 125C VCE = 10 V VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 0.5
0.4
IC = 1.0 mA
IC = 10 mA
IC = 50 mA
0.1
0 10
30
100
10 k
50 k
1000 1.0 ms IC, COLLECTOR CURRENT (mA) 300 200 100 TA = 25C TC = 25C 100 s
1.0 s
0.6
VBE(on) @ VCE = 10 V
0.4
20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID FOR DUTY CYCLE 10% 2.0 20 50 10 100 5.0 VCE, COLLECTOR VOLTAGE (VOLTS) 200 500
0.2
VCE(sat) @ IC/IB = 10
2.0 0 0.1 0.3 30 3.0 10 1.0 IC, COLLECTOR CURRENT (mA) 100 300 1.0 1.0
Figure 3. On Voltages
100 50 C, CAPACITANCE (pF) 20 10 5.0 2.0 1.0 0.3 0.5 TA = 25C f = 1.0 MHz 1.0 3.0 10 30 REVERSE BIAS (VOLTS) 100 300 Cob |h fe |, SMALLSIGNAL CURRENT GAIN Cib
10
0.2 0.3
30
100
Figure 5. Capacitance
2260
BF844
10 5.0 +9.7 V PW = 50 s DUTY CYCLE = 2.0% Vin
t, TIME ( s)
2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25C VBE(off) = 4.0 Vdc tr td 50 100 Vin RB 0 4.0 V VCC RL Vout
CS 4.0 pF*
10 5.0 ts t, TIME ( s) 2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25C 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 tf 11.4 V +10.7 V
Vin
2261
MOTOROLA
VHF Transistor
NPN Silicon
COLLECTOR 1 3 BASE 2 EMITTER
BF959
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 20 30 3.0 100 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 20 30 3.0 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) (IC = 20 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 30 mAdc, IB = 2.0 mAdc) hFE 35 40 VCE(sat) VBE(sat) 1.0 1.0 Vdc Vdc
2262
BF959
1000 500 hFE , DC CURRENT GAIN 200 200 100 100 50 40 30 20 10 mV 50 40 30 20 10 1 2 3 4 5 10 20 30 50 100 1 500
4 5
10
20
30
50
Figure 1. hFE at 10 V
f T, CURRENTGAIN BANDWIDTH PRODUCT (GHz)
2.0 1.8 C, CAPACITANCE (pF) 1.6 1.4 1.2 1 0.8 0.6 0.4 1 2 3 4 5 10 20 2V 10 V 5V
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 30 40 50 100 1 2 3 4 5 10 20 30 50 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Cre Cib Cob
Figure 4. Capacitances
10 5 4 3 2 Y11e (ms) 1 0.5 0.4 0.3 0.2 0.1 b11e Y22e ( s) g11e VCE = 10 V
500 b22e 300 200 VCE = 10 V 100 50 40 30 20 10 1 2 3 4 5 10 20 30 50 100 1 2 3 4 5 10 20 30 50 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) g22e
2263
MOTOROLA
BSP16T1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Base Current Total Device Dissipation, TA = 25C (1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC IB PD Tstg TJ Value 300 350 6.0 1000 500 1.5 65 to +150 150 Unit Vdc Vdc Vdc mAdc mAdc Watts C C
2 3
DEVICE MARKING
BT2
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 83.3 Unit C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0, L = 25 mH) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 250 Vdc, IB = 0) CollectorBase Cutoff Current (VCB = 280 Vdc, IE = 0) EmitterBase Cutoff Current (VEB = 6.0 Vdc, IC = 0) V(BR)CEO 300 V(BR)CBO 300 ICES ICBO IEBO 20 1.0 Adc 50 Adc Adc Vdc Vdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2264
BSP16T1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted)
Characteristics Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (VCE = 10 Vdc, IC = 50 mAdc) Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) hFE 30 VCE(sat) 2.0 120 Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (VCE = 10 Vdc, IC = 10 mAdc, f = 30 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) fT 15 Cobo 15 pF MHz
2265
MOTOROLA
BSP19AT1
Motorola Preferred Device
BASE 1 EMITTER 3
2 3
DEVICE MARKING
SP19A
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction-to-Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RJA TL Max 156 260 10 Unit C/W C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2266
BSP19AT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Cutoff Current (VCB = 400 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CEO 350 ICBO IEBO 10 20 Adc nAdc Vdc
ON CHARACTERISTICS (2)
DC Current Gain (IC = 20 mAdc, VCE = 10 Vdc) Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 5.0 MHz) Collector-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) Base-Emitter Saturation Voltage (IC = 50 mAdc, IB = 4.0 mAdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0% hFE 40 fT 70 VCE(sat) VBE(sat) 1.3 0.5 Vdc Vdc MHz
2267
MOTOROLA
BSP52T1
Motorola Preferred Device
2 3
EMITTER 3
DEVICE MARKING
AS3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RJA TL Max 156 260 10 Unit C/W C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2268
BSP52T1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CBO 90 V(BR)EBO 5.0 ICES IEBO 10 10 Adc Adc Vdc Vdc
ON CHARACTERISTICS (2)
DC Current Gain (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, IB = 0.5 mAdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% hFE 1000 2000 VCE(sat) VBE(on) 1.9 1.3 Vdc Vdc
2269
MOTOROLA
BSP62T1
Motorola Preferred Device
2 3
EMITTER 3
DEVICE MARKING
BS3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RJA TL Max 83.3 260 10 Unit C/W C Sec
1. Device mounted on a FR4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2270
BSP62T1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Emitter Cutoff Current (VCE = 80 Vdc, VBE = 0) Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CBO 90 V(BR)EBO 5.0 ICBO IEBO 10 10 Adc Adc Vdc Vdc
ON CHARACTERISTICS (2)
DC Current Gain (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base-Emitter On Voltage (IC = 500 mAdc, IB = 0.5 mAdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% hFE 1000 2000 VCE(sat) VBE(on) 1.9 1.3 Vdc Vdc
2271
BSP62T1
200 hFE, DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 10 V 25C VCE = 2.0 V 5.0 V TA = 125C
55C
2.0 TA = 25C
2.0 1.0
V, VOLTAGE (VOLTS)
4.0 3.0
1.6
1.2 VBE(on) @ VCE = 5.0 V 0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 0.4
2.0
5.0
10
20
50
100
200
500
1K
0 0.3 0.5
1.0
10
20 30
50
100
200 300
Figure 3. On Voltage
2.0 1.8 1.6 IC = 10 mA 1.4 1.2 1.0 0.8 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1K 2K 5K 10K IB, BASE CURRENT (A) 50 mA 100 mA 175 mA 300 mA TA = 25C
2272
MOTOROLA
COLLECTOR 3
BSS63LT1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage RBE = 10 k Collector Current Continuous Symbol VCEO VCER 110 IC 100 Value 100
2 EMITTER
1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BSS63LT1 = T1
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc) Collector Emitter Breakdown Voltage (IC = 10 Adc, IE = 0, RBE = 10 k) Collector Base Breakdown Voltage (IE = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc) Collector Cutoff Current (VCB = 90 Vdc, IE = 0) Collector Cutoff Current (VCE = 110 Vdc, RBE = 10 k) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 100 V(BR)CER 110 V(BR)CBO 110 V(BR)EBO 6.0 ICBO ICER IEBO 200 10 nAdc 100 Adc nAdc Vdc Vdc Vdc Vdc
REV 1
2273
BSS63LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 25 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 25 mAdc, IB = 2.5 mAdc) Base Emitter Saturation Voltage (IC = 25 mAdc, IB = 2.5 mAdc) hFE 30 30 VCE(sat) VBE(sat) 900 250 mVdc mVdc
2274
MOTOROLA
Driver Transistor
NPN Silicon
1 BASE
COLLECTOR 3
BSS64LT1
2 EMITTER
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 80 120 5.0 100 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BSS64LT1 = AM
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 4.0 mAdc) Collector Base Breakdown Voltage (IC = 100 mAdc) Emitter Base Breakdown Voltage (IE = 100 mAdc) Collector Cutoff Current (VCE = 90 Vdc) (TA = 150C) Emitter Cutoff Current (VEB = 4.0 Vdc) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 80 V(BR)CBO 120 V(BR)EBO 5.0 ICBO IEBO 200 0.1 500 nAdc Adc Vdc Vdc Vdc
REV 1
2275
BSS64LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (VCE = 1.0 Vdc, IC = 10 mAdc) Collector Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 400 Adc) (IC = 50 mAdc, IB = 15 mAdc) Forward Base Emitter Voltage HFE 20 VCE(sat) VBE(sat) 0.15 0.2 Vdc
2276
MOTOROLA
Switching Transistor
NPN Silicon
1 BASE
COLLECTOR 3
BSV52LT1
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Collector Current Continuous Symbol VCEO VCBO IC Value 12 20 100 Unit Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BSV52LT1 = B2
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) (VCB = 10 Vdc, IE = 0, TA = 125C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 12 ICBO 100 5.0 nAdc Adc Vdc
2277
BSV52LT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 300 Adc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) HFE 25 40 25 VCE(sat) VBE(sat) 700 850 1200 300 250 400 mVdc 120 mVdc
SWITCHING CHARACTERISTICS
Storage Time (IC = IB1 = IB2 = 10 mAdc) TurnOn Time (VBE = 1.5 Vdc, IC = 10 mAdc, IB = 3.0 mAdc) TurnOff Time (IC = 10 mAdc, IB = 3.0 mAdc) ts ton toff 18 12 ns 13 ns ns
2278
MOTOROLA
DTA114YE
3 2 1
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 11 4 Y E i s h o u s e d i n t h e SOT416/SC90 package which is ideal for lowpower surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1 R2
OUT (3)
GND (2)
R1 = 10 k R2 = 47 k
DEVICE MARKING
DTA114YE = 59
THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 55 to +150 150 mW C C
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
REV 1
2279
DTA114YE
TYPICAL ELECTRICAL CHARACTERISTICS
1 G I , DC CURRENT GAIN (NORMALIZED) IO/II = 10 VO(on), OUTPUT VOLTAGE (V) TA = 25C 25C 0.1 75C
180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IO, OUTPUT CURRENT (mA) 80 90 100 25C VO(on) = 10 V 25C TA = 75C
0.01
0.001
20
80
100 TA = 75C IO, OUTPUT CURRENT (mA) 25C V I , INPUT VOLTAGE (VOLTS)
25C 10
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
+12 V
LOAD
2280
MOTOROLA
DTA143EE
3 2 1
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by i n t e g r a t i n g t h e m i n t o a s i n g l e d e v i c e . T h e D TA 1 4 3 E E i s h o u s e d i n t h e SOT416/SC90 package which is ideal for lowpower surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1 R2
OUT (3)
GND (2)
R1 = 4.7 k R2 = 4.7 k
DEVICE MARKING
DTA143EE = 43
THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 55 to +150 150 mW C C
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. * Typical electrical characteristic curves are not available at this time.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
2281
MOTOROLA
DTC114TE
3 2 1
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. The DTC114TE is housed in the SOT416/SC90 package which is ideal for low power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1
OUT (3)
R1 = 10 k
GND (2)
DEVICE MARKING
DTC114TE = 94
THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 55 to +150 150 mW C C
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. * Typical electrical characteristic curves are not available at this time.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
2282
MOTOROLA
DTC114YE
3 2 1
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. The DTC114YE is housed in the SOT416/SC90 package which is ideal for low power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1 R2
OUT (3)
GND (2)
R1 = 10 k R2 = 47 k
DEVICE MARKING
DTC114YE = 69
THERMAL CHARACTERISTICS
Power Dissipation @ TA = 25C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 55 to +150 150 mW C C
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
REV 1
2283
DTC114YE
TYPICAL ELECTRICAL CHARACTERISTICS
1 VO(on), OUTPUT VOLTAGE (V) IO/II = 10 TA = 25C 25C 0.1 75C G I , DC CURRENT GAIN (NORMALIZED) 300 250 200 25C 150 100 50 0 VO(on) = 10 TA = 75C 25C
0.01
0.001
20
80
90 100
100 TA = 75C IO, OUTPUT CURRENT (mA) 25C V I , INPUT VOLTAGE (VOLTS)
25C 10
0.1
10
40
50
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C
2284
DTC114YE
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED LOAD
+12 V
VCC
OUT IN LOAD
2285
MOTOROLA
MBT3904DW1T1
(3) (2) (1)
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) Symbol VCEO VCBO VEBO IC 200 200 Value 40 40 60 40 6.0 5.0 Unit Vdc Vdc Vdc
(3) (4) (5) (6) Q1 Q2
MBT3906DW1T1
(2) (1)
mAdc
Q1 Q2
THERMAL CHARACTERISTICS
Characteristic Total Package Dissipation(1) TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 55 to +150 Unit mW MBT3946DW1T1* C/W C
Q1 Q2 (3) (2) (1) (4) (5) (6)
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint.
DEVICE MARKING
MBT3904DW1T1 = MA MBT3946DW1T1 = 46 MBT3906DW1T1 = A2
(4)
(5)
(6)
2286
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = 30 Vdc, VEB = 3.0 Vdc) V(BR)CEO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)CBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) V(BR)EBO MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) IBL MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) ICEX MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) 50 50 50 50 nAdc 6.0 5.0 nAdc 60 40 Vdc 40 40 Vdc Vdc
ON CHARACTERISTICS (2)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE MBT3904DW1T1 (NPN) 40 70 100 60 30 60 80 100 60 30 VCE(sat) MBT3904DW1T1 (NPN) VBE(sat) MBT3904DW1T1 (NPN) 0.65 0.65 0.85 0.95 0.85 0.95 0.2 0.3 0.25 0.4 Vdc 300 300 Vdc
MBT3906DW1T1 (PNP)
MBT3906DW1T1 (PNP)
MBT3906DW1T1 (PNP)
2287
mmhos
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) MBT3904DW1T1 (NPN) (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz) MBT3906DW1T1 (PNP)
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC = 3.0 Vdc, VBE = 0.5 Vdc) (VCC = 3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = 1.0 mAdc) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) MBT3904DW1T1 (NPN) MBT3906DW1T1 (PNP) td tr ts tf 35 35 ns 35 35 200 225 ns 50 75
2288
+3 V +10.9 V 10 k 275
t1
+3 V +10.9 V 275 10 k
1.0 0.1
0.2 0.3
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 3. Capacitance
2289
TIME (ns)
tr @ VCC = 3.0 V
100 70 50 30 20 10 7 5 IC/IB = 10
IC = 0.5 mA IC = 50 mA
f, FREQUENCY (kHz)
Figure 10. Noise Figure Motorola SmallSignal Transistors, FETs and Diodes Device Data
20 10 5
100 70 50
2 1
30
0.1
0.2
5.0
10
0.1
0.2
5.0
10
MBT3904DW1T1 (NPN)
1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
5.0
10
2291
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 MBT3904DW1T1 (NPN) VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C)
1.0
2.0
5.0
10
20
50
100
200
20
40
60
80
100
120
140
160
180 200
2292
3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 Cs < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 1N916 10 k < 1 ns
3V 275
Cs < 4 pF*
QT QA
1.0 0.1
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
200
TIME (ns)
tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
IC/IB = 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
2293
4.0
3.0
1.0
0 0.1
Figure 25.
Figure 26.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) MBT3906DW1T1 (PNP) h fe , DC CURRENT GAIN 200 100 70 50 30 20 MBT3906DW1T1 (PNP)
100 70 50
10 7
30
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
MBT3906DW1T1 (PNP)
1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 30. Voltage Feedback Ratio Motorola SmallSignal Transistors, FETs and Diodes Device Data
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
+25C TO +125C
55C TO +25C
0.2
1.0
2.0
100
200
20
40
160
180 200
2295
MOTOROLA
Chopper Transistor
PNP Silicon
COLLECTOR 3 1 BASE
MMBT404ALT1
Motorola Preferred Device
2 EMITTER
1 2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 35 40 25 150 Unit Vdc Vdc Vdc mAdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
DEVICE MARKING
MMBT404ALT1 = 2N
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board,* TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,** TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature * FR5 = 1.0 x 0.75 x 0.062 in. ** Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0)
Preferred devices are Motorola recommended choices for future use and best overall value.
35 40 25
100 100
2296
MMBT404ALT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 12 mAdc, VCE = 0.15 Vdc) CollectorEmitter Saturation Voltage (IC = 12 mAdc, IB = 0.4 mAdc) (IC = 24 mAdc, IB = 1.0 mAdc) BaseEmitter Saturation Voltage (IC = 12 mAdc, IB = 0.4 mAdc) (IC = 24 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 0.85 1.0 0.15 0.2 Vdc 100 400 Vdc
SMALLSIGNAL CHARACTERISTICS
Output Capacitance (VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz) Cobo 20 pF
SWITCHING CHARACTERISTICS
Delay time (VCC = 10 Vdc, IC = 10 mAdc) (Figure 1) Rise Time (IB1 = 1.0 mAdc, VBE(off) = 14 Vdc) Storage Time (VCC = 10 Vdc, IC = 10 mAdc) Fall Time (IB1 = IB2 = 1.0 mAdc) (Figure 1) td tr ts tf 43 180 675 160 ns ns ns ns
VCC = 10 V
1.0 k TO SCOPE
Voltages and resistor values shown are for IC = 10 mA, IC/IB = 10 and IB1 = IB2
2297
MOTOROLA
VHF/UHF Transistor
NPN Silicon
1 BASE
MMBT918LT1
COLLECTOR 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 15 30 3.0 50
1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT918LT1 = M3B
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 30 3.0 50 Vdc Vdc Vdc nAdc
2298
MMBT918LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 20 0.4 1.0 Vdc Vdc
VCC
1000 pF BYPASS
0.018 F 0.018 F 3 0.018 F NF TEST CONDITIONS IC = 1.0 mA VCE = 6.0 VOLTS RS = 50 f = 60 MHz Gpe TEST CONDITIONS IC = 6.0 mA VCE = 12 VOLTS f = 200 MHz C G 0.018 F 50
RF VM
2299
MOTOROLA
MMBT1010LT1 MSD1010T1
Motorola Preferred Devices
3 1 2
3 2 1
DEVICE MARKING
MMBT1010LT1 = GLP MSD1010T1 = GLP
THERMAL CHARACTERISTICS
Rating Power Dissipation TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 250 1.8 RJA TJ Tstg 556 150 55 ~ + 150 Unit mW mW/C C/W C C BASE EMITTER COLLECTOR
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol V(BR)CEO V(BR)EBO ICBO ICEO hFE1(2) VCE(sat)(2) Condition IC = 10 mA, IB = 0 IE = 10 A, IE = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 5 V, IC = 100 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA Min 15 5.0 300 Max 0.1 100 600 0.1 0.1 0.19 1.1 Unit Vdc Vdc A A Vdc
VBE(sat)(2)
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (2) Pulse Test: Pulse Width 300 s, D.C. 2%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2300
MOTOROLA
MMBT2222AWT1
Motorola Preferred Device
1 BASE 2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 40 75 6.0 600 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 55 to +150 Unit mW C/W C
DEVICE MARKING
MMBT2222AWT1 = 1P
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 60 Vdc, VEB = 3.0 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 75 6.0 20 10 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2301
MMBT2222AWT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (1) (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) HFE 35 50 75 100 40 VCE(sat) VBE(sat) 0.6 1.2 2.0 0.3 1.0 Vdc Vdc
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 1. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf 10 ns 25 225 ns 60
2302
MOTOROLA
COLLECTOR 3
MMBT2222LT1 MMBT2222ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC 2222 30 60 5.0 600 2222A 40 75 6.0
2 EMITTER
1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125C) (VCB = 60 Vdc, IE = 0, TA = 125C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222A MMBT2222A V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO 30 40 60 75 5.0 6.0 10 0.01 0.01 10 10 100 20 Vdc Vdc Vdc nAdc Adc
IEBO IBL
nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2303
MMBT2222LT1 MMBT2222ALT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) (IC = 150 mAdc, VCE = 10 Vdc) (3) (IC = 150 mAdc, VCE = 1.0 Vdc) (3) (IC = 500 mAdc, VCE = 10 Vdc) (3) Collector Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) hFE 35 50 75 35 100 50 30 40 VCE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A VBE(sat) MMBT2222 MMBT2222A MMBT2222 MMBT2222A 0.6 1.3 1.2 2.6 2.0 0.4 0.3 1.6 1.0 Vdc 300 Vdc
MMBT2222A only
MMBT2222 MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc)
mmhos
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity.
2304
MMBT2222LT1 MMBT2222ALT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V +16 V 0 2 V 1.0 to 100 s, DUTY CYCLE 2.0% 1 k < 2 ns 200 +16 V 0 CS* < 10 pF 14 V < 20 ns 1k 1N914 CS* < 10 pF 1.0 to 100 s, DUTY CYCLE 2.0% + 30 V 200
4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.
1000 700 500 hFE , DC CURRENT GAIN 300 200 100 70 50 30 20 10 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
50
70
100
200
300
1.0 0.8
0.6
0.4
0.2
0 0.005
0.01
0.02 0.03
0.05
0.1
0.2
2.0
3.0
5.0
10
20
30
50
2305
MMBT2222LT1 MMBT2222ALT1
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 ts = ts 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C
t, TIME (ns)
tf
10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE
10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 A 100 A 500 A 1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
5.0 10
20
50 100
0 50
100 200
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
300 200
100 70 50 1.0
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS)
20 30
50
2.0
50
70 100
Figure 9. Capacitances
2306
MMBT2222LT1 MMBT2222ALT1
1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 0 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVB for VBE RqVC for VCE(sat) +0.5
0.2
2307
MOTOROLA
Switching Transistors
NPN Silicon
1 BASE
COLLECTOR 3
MMBT2369LT1 MMBT2369ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCES VCBO VEBO IC Value 15 40 40 4.5 200
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT2369LT1 = M1J; MMBT2369ALT1 = 1JA
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (3) (IC = 10 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 10 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO 15 V(BR)CES 40 V(BR)CBO 40 V(BR)EBO 4.5 ICBO ICES MMBT2369A 0.4 0.4 30
Adc
2308
MMBT2369LT1 MMBT2369ALT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (3) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = 55C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = 55C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) hFE MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A MMBT2369 MMBT2369A VCE(sat) MMBT2369 MMBT2369A MMBT2369A MMBT2369A MMBT2369A VBE(sat) MMBT2369A MMBT2369A MMBT2369A MMBT2369A 0.7 0.85 1.02 1.15 1.60 0.25 0.20 0.30 0.25 0.50 Vdc 40 40 20 30 20 20 120 120 Vdc
SWITCHING CHARACTERISTICS
Storage Time (IB1 = IB2 = IC = 10 mAdc) TurnOn Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) TurnOff Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) 3. Pulse Test: Pulse Width ts ton toff 10 18 8.0 12 ns 5.0 13 ns ns
2309
MMBT2369LT1 MMBT2369ALT1
SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227
+10.6 V 0 1.5 V t1 3V 270 +10.75 V 0 9.15 V < 1 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2% t1 270
< 1 ns
3.3 k
Cs* < 4 pF
3.3 k
Cs* < 4 pF
+10.8 V 2 V 0
t1
10 V
95 +11.4 V 0 8.6 V
t1
10 V
95
< 1 ns
1k
Cs* < 12 pF
1k 1N916
Cs* < 12 pF
* Total shunt capacitance of test jig and connectors. TURNON WAVEFORMS Vin 0 ton 10% Vout 90% Vin 3.3 k 3.3 k 0.0023 F 0.005 F VBB + 0.1 F 50 0.0023 F 0.005 F 0.1 F +V =3V CC 220 0.1 F Vout 0 TO OSCILLOSCOPE INPUT IMPEDANCE = 50 RISE TIME = 1 ns TURNOFF WAVEFORMS Vin Vout toff 10% 90% VBB = +12 V Vin = 15 V
PULSE GENERATOR Vin RISE TIME < 1 ns SOURCE IMPEDANCE = 50 PW 300 ns DUTY CYCLE < 2%
50
6 5 4 CAPACITANCE (pF) 3 Cib Cob TJ = 25C LIMIT TYPICAL SWITCHING TIMES (nsec)
20
td
1 0.1
2 0.2 0.5 1.0 2.0 REVERSE BIAS (VOLTS) 5.0 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100
2310
MMBT2369LT1 MMBT2369ALT1
500 VCC = 10 V 25C 100C QT, F = 10 QT, F = 40 +5 V 100 0 50 QA, VCC = 10 V 20 10 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 QA, VCC = 3 V V < 1 ns 4.3 k 270 VALUES REFER TO IC = 10 mA TEST
t1
3V 10 pF MAX
Cs* < 4 pF
C=0
+6 V 0 4 V
t1
10 V
980
< 1 ns
500
Cs* < 3 pF
0.8
0.4
0.2 0.02
0.05
0.1
0.2
10
20
2311
MMBT2369LT1 MMBT2369ALT1
200 hFE , MINIMUM DC CURRENT GAIN TJ = 125C 100 75C 25C 15C 50 55C VCE = 1 V
1.4 V(sat) , SATURATION VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 F = 10 TJ = 25C COEFFICIENT (mV/ C) MAX VBE(sat)
1.0 0.5 0 0.5 1.0 1.5 VB for VBE(sat) MAX VCE(sat) 1 2 5 10 20 IC, COLLECTOR CURRENT (mA) 50 100 2.0 2.5 0 10 20 30 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100
VC VB
VC for VCE(sat)
APPROXIMATE DEVIATION FROM NOMINAL 55C to +25C 0.15 mV/C 0.4 mV/C 25C to 125C 0.15 mV/C 0.3 mV/C
MIN VBE(sat)
2312
MOTOROLA
COLLECTOR 3
MMBT2484LT1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 60 60 6.0 50
2 EMITTER
1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT2484LT1 = 1U
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) (VCB = 45 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 60 V(BR)CBO 60 V(BR)EBO 5.0 ICBO IEBO 10 10 10 nAdc Adc nAdc Vdc Vdc Vdc
2313
MMBT2484LT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc) hFE 250 VCE(sat) VBE(on) 0.95 0.35 Vdc 800 Vdc
RS
in en
IDEAL TRANSISTOR
2314
MMBT2484LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS 0 20 RS 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz
10 7.0 5.0
300 A 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz IC = 10 mA
8.0
IC = 10 mA
12
8.0 100 A 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 A 10 A
2315
MMBT2484LT1
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 55C
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) RVBE, BASEEMITTER TEMPERATURE COEFFICIENT (mV/ C)
0.4 0.8
0.6
1.2
0.4
1.6
TJ = 25C to 125C
0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
2.0 55C to 25C 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)
20
50 100
Figure 9. On Voltages
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)
8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25C
500
300 200
100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25C
1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
2316
MOTOROLA
MMBT2907AWT1
Motorola Preferred Device
1 BASE 2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 60 60 5.0 600 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 55 to +150 Unit mW C/W C
DEVICE MARKING
MMBT2907AWT1 = 2F
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 60 60 5.0 50 50 Vdc Vdc Vdc nAdc nAdc
v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2317
MMBT2907AWT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (1) (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) HFE 75 100 100 100 50 VCE(sat) VBE(sat) 1.3 2.6 0.4 1.6 Vdc Vdc
SWITCHING CHARACTERISTICS
TurnOn Time Delay Time Rise Time Storage Time Fall Time TurnOff Time 1. Pulse Test: Pulse Width (VCC = 6.0 Vd IC = 150 mAdc, 6 0 Vdc, 150 Ad IB1 = IB2 = 15 mAdc) (VCC = 30 Vd 30 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) 150 15 ton td tr ts tf toff 45 10 40 ns 80 30 100
2318
MOTOROLA
COLLECTOR 3
MMBT2907LT1 MMBT2907ALT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC 2907 40 60 5.0 600
2 EMITTER
1
2907A 60
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT2907LT1 = M2B; MMBT2907ALT1 = 2F
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE(off) = 0.5 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) MMBT2907 MMBT2907A MMBT2907 MMBT2907A IB V(BR)CEO MMBT2907 MMBT2907A V(BR)CBO V(BR)EBO ICEX ICBO 0.020 0.010 20 10 50 nAdc 40 60 60 5.0 50 Vdc Vdc nAdc Adc Vdc
(VCB = 50 Vdc, IE = 0, TA = 125C) Base Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2319
MMBT2907LT1 MMBT2907ALT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) hFE MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A MMBT2907 MMBT2907A VCE(sat) VBE(sat) 1.3 2.6 0.4 1.6 Vdc 35 75 50 100 75 100 100 30 50 300 Vdc
(IC = 500 mAdc, VCE = 10 Vdc) (3) Collector Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)
SWITCHING CHARACTERISTICS
TurnOn Time Delay Time Rise Time TurnOff Time Storage Time Fall Time (VCC = 6.0 Vd IC = 150 mAdc, 6 0 Vdc, 150 Ad IB1 = IB2 = 15 mAdc) 15 (VCC = 30 Vdc, IC = 150 mAdc, 30 Vd 150 Ad IB1 = 15 mAdc) 15 ton td tr toff ts tf 45 10 40 100 80 30 ns ns
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 16 V 200 ns 50 1.0 k INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 30 V 200 ns
30 V 200
+15 V
1.0 k 1.0 k 50
1N916
2320
MMBT2907LT1 MMBT2907ALT1
TYPICAL CHARACTERISTICS
3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 55C
0.2 0.3
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200 300
500
1.0
0.4
0.2
0 0.005
0.01
0.2
2.0
3.0
5.0 7.0 10
20 30
50
300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT tr
500 VCC = 30 V IC/IB = 10 TJ = 25C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V 200 300 500 10 7.0 5.0 5.0 7.0 10 ts = ts 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C
t, TIME (ns)
2321
MMBT2907LT1 MMBT2907ALT1
TYPICAL SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C
10 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, Rs = 430 500 A, Rs = 560 50 A, Rs = 2.7 k 100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0
6.0
6.0
4.0
4.0
2.0
2.0
5.0 10
20
50
100
50
100
200
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)
VCE = 20 V TJ = 25C
1.0
10
20 30
5.0
10
20
50
100 200
500 1000
Figure 9. Capacitances
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(on) @ VCE = 10 V
+0.5 0 RqVC for VCE(sat) 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2 0.5 1.0 2.0 RqVB for VBE
0.6
0.4
0.2
0 0.1 0.2
50 100 200
500
5.0 10 20
2322
MOTOROLA
Switching Transistor
PNP Silicon
1 BASE
COLLECTOR 3
MMBT3640LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 12 12 4.0 80
2 EMITTER
1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT3640LT1 = 2J
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 6.0 Vdc, VBE = 0) (VCE = 6.0 Vdc, VBE = 0, TA = 65C) Base Cutoff Current (VCE = 6.0 Vdc, VEB = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES IB 0.01 1.0 10 nAdc 12 12 12 4.0 Vdc Vdc Vdc Vdc Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
2323
MMBT3640LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(3)
DC Current Gain (IC = 10 mAdc, VCE = 0.3 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = 65C) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 30 20 VCE(sat) VBE(sat) 0.75 0.8 0.95 1.0 1.5 0.2 0.6 0.25 Vdc 120 Vdc
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time ( (VCC = 6.0 Vdc, IC = 50 mAdc, VEB(off) = 1.9 Vdc, IB1 = 5.0 mAdc) ( (VCC = 6.0 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc) td tr ts tf ton toff 35 75 25 60 ns 10 ns 30 20 ns 12 ns
TurnOn Time (VCC = 6.0 Vdc, IC = 50 mAdc, VEB(off) = 1.9 Vdc, IB1 = 5.0 mAdc) (VCC = 1.5 Vdc, IC = 10 mAdc, IB1 = 0.5 mAdc) TurnOff Time (VCC = 6.0 Vdc, IC = 50 mAdc, VEB(off) = 1.9 Vdc, IB1 = IB2 = 5.0 mAdc) (VCC = 1.5 Vdc, IC = 10 mAdc, IB1 = IB2 = 0.5 mAdc) 3. Pulse Test: Pulse Width
VBB = +1.9 V VCC = 6.0 V 1.0 k 0 0.1 F 680 110 Vout 5.0 V
Vin 6.8 V TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 100 ns Zin = 50 OHMS NOTES: Collector Current = 50 mA, FALL TIME 1.0 ns NOTES: TurnOn and TurnOff Time NOTES: Base Currents = 5.0 mA.
Vin 0 TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 200 ns Zin = 50 OHMS NOTES: Collector Current = 10 mA, FALL TIME 1.0 ns NOTES: TurnOn and TurnOff Time NOTES: Base Currents = 0.5 mA.
Figure 1.
Figure 2.
2324
MMBT3640LT1
200 VCE = 1.0 V hFE, DC CURRENT GAIN 100 70 50 30 20 0.2 10 0.1 0.2 5.0 10 20 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 50 100 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 TJ = 125C V, VOLTAGE (VOLTS) 25C 55C 1.4 1.2 1.0 0.8 VBE(on) @ VCE = 1.0 V 0.6 0.4 TJ = 25C VBE(sat) @ IC/IB = 10
Figure 4. On Voltages
+0.5
25C to 125C
0.4
1.0 25C to 125C RVB for VBE 2.0 0.1 0.2 55C to 25C 50 100
0.2
1.5
0 0.01 0.02
2.0
5.0
10
2000 TJ = 25C f = 100 MHz 1000 800 600 400 1.0 V VCE = 10 V C, CAPACITANCE (pF)
200 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
2.0 3.0
5.0 7.0 10
20
Figure 8. Capacitance
2325
MOTOROLA
MMBT3904LT1
Motorola Preferred Device
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT3904LT1 = 1AM
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBL ICEX 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2326
MMBT3904LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(3)
DC Current Gain (1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) HFE 40 70 100 60 30 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.2 0.3 Vdc 300 Vdc
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) ( (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts tf 35 ns 35 200 ns 50
2327
MMBT3904LT1
DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 0 0.5 V < 1 ns CS < 4 pF* 9.1 V < 1 ns 1N916 CS < 4 pF* 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k
TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10
1.0 0.1
0.2 0.3
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 3. Capacitance
2328
MMBT3904LT1
500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0 V 50 70 100 200 40 V 15 V 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
100 70 50 30 20 10 7 5 IC/IB = 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA
IC = 0.5 mA IC = 50 mA
f, FREQUENCY (kHz)
Figure 9.
Figure 10.
2329
MMBT3904LT1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50
h fe , CURRENT GAIN
200
20 10 5
100 70 50
2 1
30
0.1
0.2
0.1
0.2
5.0
10
1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
2330
MMBT3904LT1
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C)
1.0
2.0
5.0
10
20
50
100
200
20
40
60
80
100
120
140
160
180 200
2331
MOTOROLA
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 Symbol VCEO VCBO VEBO IC Value 40 40 60 40 6.0 5.0 200 200 Unit Vdc Vdc Vdc
3
mAdc
1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA TJ, Tstg Max 150 833 55 to +150 Unit mW C/W C
DEVICE MARKING
MMBT3904WT1 = AM MMBT3906WT1 = 2A
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = 30 Vdc, VEB = 3.0 Vdc) V(BR)CEO MMBT3904WT1 MMBT3906WT1 V(BR)CBO MMBT3904WT1 MMBT3906WT1 V(BR)EBO MMBT3904WT1 MMBT3906WT1 IBL MMBT3904WT1 MMBT3906WT1 ICEX MMBT3904WT1 MMBT3906WT1 50 50 50 50 nAdc 6.0 5.0 nAdc 60 40 Vdc 40 40 Vdc Vdc
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
2332
ON CHARACTERISTICS(2)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE MMBT3904WT1 40 70 100 60 30 60 80 100 60 30 VCE(sat) MMBT3904WT1 MMBT3906WT1 VBE(sat) MMBT3904WT1 MMBT3906WT1 0.65 0.65 0.85 0.95 0.85 0.95 0.2 0.3 0.25 0.4 Vdc 300 300 Vdc
MMBT3906WT1
mmhos
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 2. Pulse Test: Pulse Width (VCC = 3.0 Vdc, VBE = 0.5 Vdc) (VCC = 3.0 Vdc, VBE = 0.5 Vdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc) (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = 1.0 mAdc) MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 MMBT3904WT1 MMBT3906WT1 td tr ts tf 35 35 35 35 200 225 50 75 ns
ns
2333
+3 V +10.9 V 10 k 275
t1
+3 V +10.9 V 275 10 k
TJ = 25C TJ = 125C 10 MMBT3904WT1 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10 MMBT3904WT1
1.0 0.1
0.2 0.3
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 3. Capacitance
2334
TIME (ns)
tr @ VCC = 3.0 V
40 V 15 V 2.0 V 50 70 100
IC/IB = 20 IC/IB = 10
SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA
IC = 0.5 mA IC = 50 mA IC = 100 mA
f, FREQUENCY (kHz)
2335
20 10 5
100 70 50
2 1
30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.1
0.2
5.0
10
MMBT3904WT1
1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
5.0
10
2336
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 MMBT3904WT1 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C)
1.0
2.0
5.0
10
20
50
100
200
20
40
60
80
100
120
140
160
180 200
2337
0.2 0.3
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
500 300 200 100 TIME (ns) 70 50 30 20 10 7 5 tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) MMBT3906WT1 IC/IB = 10
500 300 200 t f , FALL TIME (ns) 100 70 50 30 20 10 7 5 IC/IB = 10 MMBT3906WT1 IC/IB = 20 VCC = 40 V IB1 = IB2
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 24. Fall Time Motorola SmallSignal Transistors, FETs and Diodes Device Data
3.0
1.0
SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz)
0 0.1
Figure 25.
Figure 26.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 MMBT3906WT1 200 hfe , CURRENT GAIN hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20 MMBT3906WT1
100 70 50
10 7.0 5.0 0.1 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
MMBT3906WT1
1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0
10
Figure 29. Input Impedance Motorola SmallSignal Transistors, FETs and Diodes Device Data
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
1.0
55C TO +25C
0.2
VCE(sat) @ IC/IB = 10
20
40
180 200
2340
MOTOROLA
COLLECTOR 3
MMBT3906LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 40 40 5.0 200
2 EMITTER
1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT3906LT1 = 2A
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Width 300 s, Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2341
MMBT3906LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(3)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) HFE 60 80 100 60 30 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.25 0.4 Vdc 300 Vdc
mmhos
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 3.0 Vdc, VBE = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) ( (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts tf 35 ns 35 225 ns 75
3V +9.1 V 275 < 1 ns 275 10 k 0 CS < 4 pF* 1N916 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V CS < 4 pF*
< 1 ns +0.5 V 10 k
10.6 V
2342
MMBT3906LT1
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 3.0 2.0 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10
QT QA
1.0 0.1
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
200
Figure 3. Capacitance
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200
TIME (ns)
tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
2343
MMBT3906LT1
TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA IC = 1.0 mA
4.0
3.0
2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100
1.0
0 0.1
0.1
0.2
40
100
Figure 7.
Figure 8.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20
h fe , DC CURRENT GAIN
200
100 70 50
10 7
30
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
2344
MMBT3906LT1
TYPICAL STATIC CHARACTERISTICS
2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
+25C TO +125C
0.6
55C TO +25C
0.2
1.0
2.0
100
200
20
40
160
180 200
2345
MOTOROLA
Switching Transistor
NPN Silicon
COLLECTOR 3 1 BASE
MMBT4401LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 600
1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT4401LT1 = 2X
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. V(BR)CEO 40 V(BR)CBO 60 V(BR)EBO 6.0 IBEV ICEX 0.1 0.1 Adc Adc Vdc Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2346
MMBT4401LT1
ELECTRICAL CHARACTERISTICS (continued) (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(3)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 20 40 80 100 40 VCE(sat) VBE(sat) 0.75 0.95 1.2 0.4 0.75 Vdc 300 Vdc
mmhos
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf 15 ns 20 225 ns 30
4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
2347
MMBT4401LT1
TRANSIENT CHARACTERISTICS
25C 30 20 CAPACITANCE (pF) Q, CHARGE (nC) Cobo 10 7.0 5.0 Ccb 3.0 2.0 0.1 100C 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 2.0 3.0 5.0 10 1.0 REVERSE VOLTAGE (VOLTS) 20 30 50 10 20 200 50 70 100 30 IC, COLLECTOR CURRENT (mA) 300 500 QT
VCC = 30 V IC/IB = 10
QA
Figure 3. Capacitances
100 70 50 t, TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VEB = 2.0 V td @ VEB = 0 IC/IB = 10
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
300 200 t s, STORAGE TIME (ns) ts = ts 1/8 tf IB1 = IB2 IC/IB = 10 to 20 t f , FALL TIME (ns)
100 70 50
10 7.0
30
5.0 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
2348
MMBT4401LT1
SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C Bandwidth = 1.0 Hz
10 IC = 1.0 mA, RS = 150 IC = 500 A, RS = 200 IC = 100 A, RS = 2.0 k IC = 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 A IC = 100 A IC = 500 A IC = 1.0 mA
6.0
6.0
4.0
4.0
2.0 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C selected from the MMBT4401LT1 lines, and the same units This group of graphs illustrates the relationship between were used to develop the correspondingly numbered curves hfe and other h parameters for this series of transistors. To on each graph. obtain these curves, a highgain and a lowgain unit were
300 hie , INPUT IMPEDANCE (OHMS) 200 hfe , CURRENT GAIN 50 k MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2
20 k 10 k 5.0 k
0.2
0.3
2.0
3.0
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
0.2
0.3
2.0 3.0
5.0 7.0 10
Figure 13. Voltage Feedback Ratio Motorola SmallSignal Transistors, FETs and Diodes Device Data
MMBT4401LT1
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 1.0 25C 0.7 0.5 0.3 0.2 0.1 55C
0.2
0.3
0.5
0.7
1.0
2.0
30
50
70
100
200
300
500
1.0 TJ = 25C
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0 0.01
0.02 0.03
0.2
0.3
2.0
3.0
5.0 7.0
10
20
30
50
0.6
VBE @ VCE = 10 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0 0.1 0.2 0.5 50 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 500
2350
MOTOROLA
Switching Transistor
PNP Silicon
1 BASE
COLLECTOR 3
MMBT4403LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 40 40 5.0 600
2 EMITTER
1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT4403LT1 = 2T
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO 40 V(BR)CBO 40 V(BR)EBO 5.0 IBEV ICEX 0.1 0.1 Adc Adc Vdc Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2351
MMBT4403LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc)(3) (IC = 500 mAdc, VCE = 2.0 Vdc)(3) Collector Emitter Saturation Voltage(3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 30 60 100 100 20 VCE(sat) VBE(sat) 0.75 0.95 1.3 0.4 0.75 Vdc 300 Vdc
mmhos
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ( (VCC = 30 Vdc, VEB = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) td tr ts tf 15 ns 20 225 ns 30
1.0 to 100 s, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
2352
MMBT4403LT1
TRANSIENT CHARACTERISTICS
25C 30 20 CAPACITANCE (pF) 100C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 20 30 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 10 7.0 5.0 Ccb
VCC = 30 V IC/IB = 10
QT QA
Figure 3. Capacitances
100 70 50 t r , RISE TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
200 IC/IB = 10 t s, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts = ts 1/8 tf 30 20 IC/IB = 20
10
20
30
50
70
100
200
300
500
2353
MMBT4403LT1
SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C Bandwidth = 1.0 Hz
10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k NF, NOISE FIGURE (dB) 8
0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C selected from the MMBT4403LT1 lines, and the same units This group of graphs illustrates the relationship between were used to develop the correspondinglynumbered curves hfe and other h parameters for this series of transistors. To on each graph. obtain these curves, a highgain and a lowgain unit were
1000 700 500 hfe , CURRENT GAIN 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2
100 70 50
100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2
Figure 13. Output Admittance Motorola SmallSignal Transistors, FETs and Diodes Device Data
MMBT4403LT1
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 55C
0.2
0.3
0.5
0.7
1.0
2.0
30
50
70
100
200
300
500
1.0 0.8
0.2
0 0.005
0.01
0.02
0.03
0.2
2.0
3.0
5.0
7.0
10
20
30
50
0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2
0.6
VBE(sat) @ VCE = 10 V
0.4
0.2
0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500
2355
MOTOROLA
MMBT5087LT1
Motorola Preferred Device
3 1 2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 50 50 3.0 50 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
MMBT5087LT1 = 2Q
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) (VCB = 35 Vdc, IE = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO ICBO 10 50 50 50 Vdc Vdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2356
MMBT5087LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) BaseEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 250 250 250 VCE(sat) VBE(sat) 800 0.3 0.85 Vdc Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 20 mAdc, VCE = 5.0 Vdc, RS = 10 k, f = 1.0 kHz) (IC = 100 Adc, VCE = 5.0 Vdc, RS = 3.0 k, f = 1.0 kHz) fT Cobo hfe NF 2.0 2.0 40 250 4.0 900 MHz pF dB
2357
MMBT5087LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 3.0 2.0 1.0 mA 100 A 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 A 100 A 30 A 10 A IC = 1.0 mA
BANDWIDTH = 1.0 Hz RS
BANDWIDTH = 1.0 Hz
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A)
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 5. Wideband 2358 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MMBT5087LT1
TYPICAL STATIC CHARACTERISTICS
VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 1.0 TA = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA) 100
0.6
0.4
40
100 A 50 A
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 55C to 25C 0.8 25C to 125C 1.6 25C to 125C
55C to 25C
2.4 0.1
50
100
Figure 8. On Voltages
2359
MMBT5087LT1
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 1.0 ts
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 16 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
0.05
0.1
0.2
0.5
1.0
2360
MMBT5087LT1
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICEO
4 0
2 0
2361
MOTOROLA
COLLECTOR 3
MMBT5088LT1 MMBT5089LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC 5088LT1 30 35 4.5 50
2 EMITTER
1
5089LT1 25 30
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT5088LT1 = 1Q; MMBT5089LT1 = 1R
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO MMBT5088 MMBT5089 V(BR)CBO MMBT5088 MMBT5089 ICBO MMBT5088 MMBT5089 IEBO MMBT5088 MMBT5089 50 100 50 50 nAdc 35 30 nAdc 30 25 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2362
MMBT5088LT1 MMBT5089LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) hFE MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 VCE(sat) VBE(sat) 0.8 0.5 Vdc 300 400 350 450 300 400 900 1200 Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc)
RS
in en
IDEAL TRANSISTOR
2363
MMBT5088LT1 MMBT5089LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS 0 20 RS 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz
10 7.0 5.0
300 A 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz IC = 10 mA
8.0
IC = 10 mA
12
8.0 100 A 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 A 10 A
2364
MMBT5088LT1 MMBT5089LT1
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 55C
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) RVBE, BASEEMITTER TEMPERATURE COEFFICIENT (mV/ C)
0.4 0.8
0.6
1.2
0.4
1.6
TJ = 25C to 125C
0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
2.0 55C to 25C 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)
20
50 100
Figure 9. On Voltages
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)
8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25C
500
300 200
100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25C
1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
2365
MOTOROLA
COLLECTOR 3
MMBT5401LT1
Motorola Preferred Device
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 150 160 5.0 500 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT5401LT1 = 2L
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0, TA = 100C) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 150 V(BR)CBO 160 V(BR)EBO 5.0 ICES 50 50 nAdc Adc Vdc Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2366
MMBT5401LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 50 60 50 VCE(sat) VBE(sat) 1.0 1.0 0.2 0.5 Vdc 240 Vdc
2367
MMBT5401LT1
200 150 TJ = 125C h FE, CURRENT GAIN 100 70 50 55C 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 VCE = 1.0 V VCE = 5.0 V 25C
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
103 IC, COLLECTOR CURRENT ( A) 102 101 TJ = 125C 100 75C 101 102 103 0.3 REVERSE 25C FORWARD VCE = 30 V IC = ICES
0.2
0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASEEMITTER VOLTAGE (VOLTS)
0.6
0.7
2368
MMBT5401LT1
0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 V, TEMPERATURE COEFFICIENT (mV/ C) 1.0 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 VB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VC for VCE(sat) TJ = 55C to 135C
Figure 4. On Voltages
10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F 100 RB 5.1 k Vin 100 1N914 3.0 k RC Vout
C, CAPACITANCE (pF)
VBB + 8.8 V
VCC 30 V
TJ = 25C
Cobo
0.3
2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS)
10
20
Figure 7. Capacitances
2000 IC/IB = 10 TJ = 25C tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V
2369
MOTOROLA
COLLECTOR 3
MMBT5550LT1 MMBT5551LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 140 160 6.0 600
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT5550LT1 = M1F; MMBT5551LT1 = G1
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100C) (VCB = 120 Vdc, IE = 0, TA = 100C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO MMBT5550 MMBT5551 V(BR)CBO MMBT5550 MMBT5551 V(BR)EBO 6.0 ICBO MMBT5550 MMBT5551 MMBT5550 MMBT5551 IEBO 50 100 50 100 50 160 180 140 160
Vdc
Vdc
Vdc
2370
MMBT5550LT1 MMBT5551LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE MMBT5550 MMBT5551 MMBT5550 MMBT5551 MMBT5550 MMBT5551 VCE(sat) Both Types MMBT5550 MMBT5551 VBE(sat) Both Types MMBT5550 MMBT5551 1.0 1.2 1.0 0.15 0.25 0.20 Vdc 60 80 60 80 20 30 250 250 Vdc
(IC = 50 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)
2371
MMBT5550LT1 MMBT5551LT1
500 300 200 h FE, DC CURRENT GAIN 100 55C 50 30 20 10 7.0 5.0 0.1 TJ = 125C 25C VCE = 1.0 V VCE = 5.0 V
0.2
0.3
0.5
0.7
1.0
10
20
30
50
70
100
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
101 VCE = 30 V IC, COLLECTOR CURRENT ( A) 100 101 102 103 104 105 0.4 TJ = 125C V, VOLTAGE (VOLTS)
1.0
TJ = 25C
0.4
0.3
0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASEEMITTER VOLTAGE (VOLTS)
0.5
0.6
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA)
50
100
Figure 4. On Voltages
2372
MMBT5550LT1 MMBT5551LT1
2.5 V, TEMPERATURE COEFFICIENT (mV/ C) 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F VBB 8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout TJ = 55C to +135C
1000 TJ = 25C 500 300 t, TIME (ns) 200 100 50 Cobo 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V tr @ VCC = 30 V IC/IB = 10 TJ = 25C tr @ VCC = 120 V
0.3
2.0
3.0
5.0 7.0
10
20
1.0
50
100
200
Figure 7. Capacitances
5000 3000 2000 tf @ VCC = 30 V 1000 t, TIME (ns) 500 300 200 100 50 0.2 0.3 0.5 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25C
100
200
2373
MOTOROLA
Darlington Transistor
NPN Silicon
COLLECTOR 3 BASE 1
MMBT6427LT1
Motorola Preferred Device
EMITTER 2
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 40 40 12 500 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT6427LT1 = 1V
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IC = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 40 V(BR)CBO 40 V(BR)EBO 12 ICES ICBO IEBO 50 50 nAdc 1.0 nAdc Adc Vdc Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2374
MMBT6427LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 0.5 mAdc) (IC = 500 mAdc, IB = 0.5 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 0.5 mAdc) Base Emitter On Voltage (IC = 50 mAdc, VCE = 5.0 Vdc) hFE 10,000 20,000 14,000 VCE(sat)(3) VBE(sat) VBE(on) 1.75 2.0 Vdc 1.2 1.5 Vdc 100,000 200,000 140,000 Vdc
RS
in en
IDEAL TRANSISTOR
2375
MMBT6427LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
500 200 en, NOISE VOLTAGE (nV) 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 A 10 A
IC = 1.0 mA
200
100 70 50 30 20
BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 A 10 10 A 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 A
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2376
MMBT6427LT1
SMALLSIGNAL CHARACTERISTICS
20 TJ = 25C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALLSIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
2.0
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
Figure 6. Capacitance
200 k TJ = 125C hFE, DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
25C
1.5
1.0
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.0
25C TO 125C
2.0
0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
500
2377
MMBT6427LT1
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
SINGLE PULSE ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
FIGURE A tP PP PP
2378
MOTOROLA
Amplifier Transistors
NPN Silicon
1 BASE
COLLECTOR 3
MMBT6428LT1 MMBT6429LT1
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC 6428LT1 50 60 6.0 200 6429LT1 45 55 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT6428LT1 = 1KM; MMBT6429LT1 = 1L
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO MMBT6428 MMBT6429 V(BR)CBO MMBT6428 MMBT6429 ICES ICBO IEBO 0.01 0.01 Adc 0.1 Adc 60 55 Adc 50 45 Vdc Vdc
2379
MMBT6428LT1 MMBT6429LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.01 mAdc, VCE = 5.0 Vdc) hFE MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 MMBT6428 MMBT6429 VCE(sat) VBE(on) 0.56 0.66 0.2 0.6 Vdc 250 500 250 500 250 500 250 500 650 1250 Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 mAdc)
RS
in en
IDEAL TRANSISTOR
2380
MMBT6428LT1 MMBT6429LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS 0 20 RS 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz
10 7.0 5.0
300 A 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz IC = 10 mA
8.0
IC = 10 mA
12
8.0 100 A 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 A 10 A
2381
MMBT6428LT1 MMBT6429LT1
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 55C
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) RVBE, BASEEMITTER TEMPERATURE COEFFICIENT (mV/ C)
0.4 0.8
0.6
1.2
0.4
1.6
TJ = 25C to 125C
0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
2.0 55C to 25C 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)
20
50 100
Figure 9. On Voltages
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)
8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25C
500
300 200
100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25C
1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
2382
MOTOROLA
MMBT6517LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Base Current Collector Current Continuous Symbol VCEO VCBO VEBO IB IC Value 350 350 5.0 250 500
1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBT6517LT1 = 1Z
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc) Collector Base Breakdown Voltage (IC = 100 mAdc) Emitter Base Breakdown Voltage (IE = 10 mAdc) Collector Cutoff Current (VCB = 250 Vdc) Emitter Cutoff Current (VEB = 5.0 Vdc) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO 350 V(BR)CBO 350 V(BR)EBO 6.0 ICBO IEBO 50 50 nAdc nAdc Vdc Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2383
MMBT6517LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (3) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 30 mAdc, IB = 3.0 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 10 Vdc) hFE 20 30 30 20 15 VCE(sat) VBE(sat) VBE(on) 2.0 0.75 0.85 0.90 Vdc 0.30 0.35 0.50 1.0 Vdc 200 200 Vdc
2384
MMBT6517LT1
200 VCE = 10 V hFE , DC CURRENT GAIN 100 70 50 55C 30 20 25C TJ = 125C f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
30 20
10 1.0
2.0
50 70 100
10 1.0
2.0
50 70
100
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
+ 10
25C to 125C
55C to 25C
2.0
50
70
100
Figure 3. On Voltages
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Ceb
TJ = 25C
Ccb
0.5
50 100 200
Figure 5. Capacitance
2385
MMBT6517LT1
1.0 k 700 500 300 200 t, TIME (ns) tr 100 70 50 30 20 10 1.0 VCE(off) = 100 V IC/IB = 5.0 TJ = 25C t, TIME (ns) 10 k 7.0 k 5.0 k 3.0 k 2.0 k 1.0 k 700 500 300 200 100 1.0 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C ts
td @ VBE(off) = 2.0 V
2.0
50
70 100
2.0 3.0
50
70 100
+VCC VCC ADJUSTED FOR VCE(off) = 100 V 1.0 k 50 9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD7000 2.2 k
+10.8 V
20 k
50 SAMPLING SCOPE
APPROXIMATELY 1.35 V
RESISTANCE (NORMALIZED)
0.05
SINGLE PULSE ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
2386
MMBT6517LT1
FIGURE A tP PP PP
2387
MOTOROLA
MMBT6520LT1
Motorola Preferred Device
2 EMITTER
1 2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Base Current Collector Current Continuous Symbol VCEO VCBO VEBO IB IC Value 350 350 5.0 250 500 Unit Vdc Vdc Vdc mA mAdc
DEVICE MARKING
MMBT6520LT1 = 2Z
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mA) CollectorBase Breakdown Voltage (IC = 100 A) EmitterBase Breakdown Voltage (IE = 10 A) Collector Cutoff Current (VCB = 250 V) Emitter Cutoff Current (VEB = 4.0 V) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 350 350 5.0 50 50 Vdc Vdc Vdc nA nA
Preferred devices are Motorola recommended choices for future use and best overall value.
2388
MMBT6520LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 30 mA, VCE = 10 V) (IC = 50 mA, VCE = 10 V) (IC = 100 mA, VCE = 10 V) CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) (IC = 50 mA, IB = 5.0 mA) BaseEmitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) (IC = 20 mA, IB = 2.0 mA) (IC = 30 mA, IB = 3.0 mA) BaseEmitter On Voltage (IC = 100 mA, VCE = 10 V) hFE 20 30 30 20 15 VCE(sat) VBE(sat) VBE(on) 0.75 0.85 0.90 2.0 Vdc 0.30 0.35 0.50 1.0 Vdc 200 200 Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 mA, VCE = 20 V, f = 20 MHz) CollectorBase Capacitance (VCB= 20 V, f = 1.0 MHz) EmitterBase Capacitance (VEB= 0.5 V, f = 1.0 MHz) fT Ccb Ceb 40 200 6.0 100 MHz pF pF
2389
MMBT6520LT1
200 f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) VCE = 10 V TJ = 125C 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz
100 70
25C
55C 50
30 20
30 20 1.0
2.0
3.0
50
70 100
10 1.0
2.0
50 70
100
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 VCE(sat) @ IC/IB = 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
+ 10
25C to 125C
55C to 25C
2.0
50
70
100
Figure 3. On Voltages
TJ = 25C
td @ VBE(off) = 2.0 V
tr 100 70 50 30 20 10 1.0
Ccb
0.5
50 100 200
2.0
50
70 100
Figure 5. Capacitance
2390
MMBT6520LT1
10 k 7.0 k 5.0 k 3.0 k 2.0 k t, TIME (ns) 1.0 k 700 500 300 200 100 1.0 tf VCE(off) = 100 V IC/IB = 5.0 IB1 = IB2 TJ = 25C ts
2.0 3.0
50
70 100
+VCC VCC ADJUSTED FOR VCE(off) = 100 V 1.0 k 50 9.2 V PULSE WIDTH 100 s tr, tf 5.0 ns DUTY CYCLE 1.0% FOR PNP TEST CIRCUIT, REVERSE ALL VOLTAGE POLARITIES 1/2MSD7000 2.2 k
+10.8 V
20 k
50 SAMPLING SCOPE
APPROXIMATELY 1.35 V
0.05
SINGLE PULSE ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
2391
MMBT6520LT1
FIGURE A tP PP PP
2392
MOTOROLA
Driver Transistors
NPN Silicon
COLLECTOR 3 1 BASE
MMBTA05LT1 MMBTA06LT1*
*Motorola Preferred Device
2 EMITTER
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC MMBTA05 60 60 4.0 500 MMBTA06 80 80 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBTA05LT1 = 1H; MMBTA06LT1 = 1GM
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 1. FR 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. MMBTA05 MMBTA06 V(BR)CEO MMBTA05 MMBTA06 V(BR)EBO ICES ICBO 0.1 0.1 60 80 4.0 0.1 Vdc Vdc
mAdc mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2393
MMBTA05LT1 MMBTA06LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) hFE 100 100 VCE(sat) VBE(on) 0.25 1.2 Vdc Vdc
2394
MOTOROLA
MMBTA13LT1 MMBTA14LT1*
*Motorola Preferred Device
3 1 2
EMITTER 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 300 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBTA13LT1 = 1M; MMBTA14LT1 = 1N
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CES ICBO IEBO 30 100 100 Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2395
MMBTA13LT1 MMBTA14LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(3)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MMBTA13 MMBTA14 MMBTA13 MMBTA14 VCE(sat) VBE 5000 10,000 10,000 20,000 1.5 2.0 Vdc Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)
RS
in en
IDEAL TRANSISTOR
2396
MMBTA13LT1 MMBTA14LT1
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
500 200 en, NOISE VOLTAGE (nV) 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA)
2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 A 10 A
IC = 1.0 mA
200
100 70 50 30 20
BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 A 10 10 A 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 A
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2397
MMBTA13LT1 MMBTA14LT1
SMALLSIGNAL CHARACTERISTICS
20 TJ = 25C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALLSIGNAL CURRENT GAIN
2.0
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
Figure 6. Capacitance
200 k TJ = 125C hFE, DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
25C
1.5
1.0
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.0
25C TO 125C
2.0
0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
500
2398
MMBTA13LT1 MMBTA14LT1
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
SINGLE PULSE ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25C TC = 25C
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP
2399
MOTOROLA
MMBTA20LT1
3 1
2 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VEBO IC Value 40 4.0 100 Unit Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBTA20LT1 = 1C
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR)CEO V(BR)EBO ICBO 40 4.0 100 Vdc Vdc nAdc
2400
MMBTA20LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 40 400 0.25 Vdc
2401
MMBTA20LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 A BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 A 10 A IC = 1.0 mA 300 A 100 A BANDWIDTH = 1.0 Hz RS
100 A
30 A
BANDWIDTH = 1.0 Hz
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 7. Wideband 2402 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MMBTA20LT1
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C
200
25C
55C 100 80 60 40 0.004 0.006 0.01 MPS390 VCE = 1.0 V 4 VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100
0.8 IC = 1.0 mA 10 mA 50 mA
0.6
100 mA
60 200 A 40 100 A 20
0.4
0.2
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
1.4
1.6 0.8
2403
MMBTA20LT1
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts
t, TIME (ns)
VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100
50 70
100
500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS3904 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPS3904 hfe 200 @ IC = 1.0 mA
2404
MMBTA20LT1
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.05
0.1
0.2
0.5
1.0
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO
4 0
2 0
Figure 19A.
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms
100 s 10 s 1.0 s
TC = 25C TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
dc
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
40
Figure 20.
2405
MOTOROLA
* MMBTA42LT1 MMBTA43LT1
*Motorola Preferred Device
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous
DEVICE MARKING
MMBTA42LT1 = 1D; MMBTA43LT1 = M1E
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO MMBTA42 MMBTA43 V(BR)CBO MMBTA42 MMBTA43 V(BR)EBO ICBO MMBTA42 MMBTA43 IEBO MMBTA42 MMBTA43 0.1 0.1 0.1 0.1 300 200 6.0 300 200
Vdc
Vdc
Vdc Adc
Adc
2406
MMBTA42LT1 MMBTA43LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(3)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE Both Types Both Types MMBTA42 MMBTA43 VCE(sat) MMBTA42 MMBTA43 VBE(sat) 0.5 0.5 0.9 Vdc 25 40 40 40 Vdc
2407
MMBTA42LT1 MMBTA43LT1
200 VCE = 10 Vdc hFE, DC CURRENT GAIN TJ = +125C
100
2.0
3.0
5.0
20
30
50
70
100
100 50 C, CAPACITANCE (pF) 20 10 5.0 Ccb 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) Ceb
30 20
100
200
10 1.0
2.0
50
70 100
Figure 2. Capacitances
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 5.0 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
Figure 4. On Voltages
2408
MOTOROLA
Driver Transistors
PNP Silicon
1 BASE
COLLECTOR 3
MMBTA55LT1 * MMBTA56LT1
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC MMBTA55 60 60 4.0 500 80 80
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg Symbol 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) MMBTA55 MMBTA56 MMBTA55 MMBTA56 V(BR)CEO V(BR)EBO ICES ICBO 60 80 4.0 0.1 0.1 0.1 Vdc Vdc Adc Adc
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) hFE VCE(sat) VBE(on) fT 100 100 0.25 1.2 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2409
MOTOROLA
Darlington Transistors
PNP Silicon
COLLECTOR 3 BASE 1
MMBTA63LT1 MMBTA64LT1 *
*Motorola Preferred Device
EMITTER 2
3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCES VCBO VEBO IC Value 30 30 10 500 Unit Vdc Vdc Vdc mAdc
1 2
DEVICE MARKING
MMBTA63LT1 = 2U; MMBTA64LT1 = 2V
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg Characteristic Symbol 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc) Collector Cutoff Current (VCB = 30 Vdc) Emitter Cutoff Current (VEB = 10 Vdc) V(BR)CEO ICBO IEBO hFE MMBTA63 MMBTA64 MMBTA63 MMBTA64 VCE(sat) VBE(on) fT 5,000 10,000 10,000 20,000 1.5 2.0 Vdc Vdc 30 100 100 Vdc nAdc nAdc
ON CHARACTERISTICS
DC Current Gain(3) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc)
Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)
125
MHz
2410
MMBTA63LT1 MMBTA64LT1
200 hFE , DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3 10 V 25C VCE = 2.0 V 5.0 V TA = 125C
55C
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
2.0 TA = 25C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.10.2 0.5 1 2 5 10 20 50 100200500 1K2K 5K10K IB, BASE CURRENT (A) IC = 10 mA 50 mA 100 mA 175 mA 300 mA
1.2 VBE(on) @ VCE = 5.0 V 0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 0.4
0 0.3 0.5
1.0
Figure 2. On Voltage
5.0
10
20
50
100 200
500
1K
2411
MOTOROLA
COLLECTOR 3
MMBTA70LT1
MAXIMUM RATINGS
Rating CollectorEmitter Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VEBO IC Value 40 4.0 100
2 EMITTER
1
DEVICE MARKING
MMBTA70LT1 = M2C
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg Symbol 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) EmitterBase Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)EBO ICBO 40 4.0 100 Vdc Vdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 40 400 0.25 Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. fT Cobo 125 4.0 MHz pF
2412
MMBTA70LT1
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 3.0 2.0 1.0 mA 100 A 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 A 100 A 30 A 10 A IC = 1.0 mA
BANDWIDTH = 1.0 Hz RS
BANDWIDTH = 1.0 Hz
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A)
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 5. Wideband Motorola SmallSignal Transistors, FETs and Diodes Device Data 2413
MMBTA70LT1
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C 25C
200
55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100
0.6
0.4
40
100 A 50 A
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 55C to 25C 0.8 25C to 125C 1.6 25C to 125C
55C to 25C
2.4 0.1
50
100
Figure 9. On Voltages
2414
MMBTA70LT1
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 1.0 ts
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 200 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA
2415
MMBTA70LT1
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.05
0.1
0.2
0.5
1.0
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICEO
4 0
2 0
2416
MOTOROLA
COLLECTOR 3
* MMBTA92LT1 MMBTA93LT1
*Motorola Preferred Device
2 EMITTER
3 1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC MMBTA92 300 300 5.0 500 MMBTA93 200 200 5.0 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
MMBTA92LT1 = 2D; MMBTA93LT1 = 2E
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(3) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
V(BR)CEO MMBTA92 MMBTA93 V(BR)CBO MMBTA92 MMBTA93 V(BR)EBO ICBO MMBTA92 MMBTA93 IEBO 0.25 0.25 0.1 300 200 5.0 300 200
Vdc
Vdc
Vdc Adc
Adc
2417
MMBTA92LT1 MMBTA93LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(3)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE Both Types Both Types MMBTA92 MMBTA93 VCE(sat) MMBTA92 MMBTA93 VBE(sat) 0.5 0.5 0.9 Vdc 25 40 25 25 Vdc
2418
MMBTA92LT1 MMBTA93LT1
150 100 hFE, DC CURRENT GAIN +25C 70 50 55C TJ = +125C VCE = 10 Vdc
2.0 Ccb 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100200 500 1000 VR, REVERSE VOLTAGE (VOLTS)
0 1.0
2.0
50
100
Figure 2. Capacitances
1.0
0.4
0.2
VCE(sat) @ IC/IB = 10 mA
0 1.0
2.0
50
100
Figure 4. On Voltages
2419
MOTOROLA
VHF/UHF Transistor
MMBTH10LT1
COLLECTOR 3 1 BASE
3
Motorola Preferred Device
NPN Silicon
2 EMITTER
1 2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc
DEVICE MARKING
MMBTH10LT1 = 3EM
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
Preferred devices are Motorola recommended choices for future use and best overall value.
2420
MMBTH10LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) BaseEmitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) CommonBase Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) fT Ccb Crb rbCc 650 0.7 0.65 9.0 MHz pF pF ps hFE VCE(sat) VBE 60 0.5 0.95 Vdc Vdc Symbol Min Typ Max Unit
2421
MMBTH10LT1
TYPICAL CHARACTERISTICS
COMMONBASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) yib, INPUT ADMITTANCE
80 y ib , INPUT ADMITTANCE (mmhos) 70 60 bib jb ib (mmhos) 50 40 30 20 10 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 50 60 20 1000 MHz 30 40 700 400 200 100 gib 0 10
10
20
30
40 50 gib (mmhos)
60
70
80
30 1000 MHz
2422
MMBTH10LT1
TYPICAL CHARACTERISTICS
COMMONBASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) yrb, REVERSE TRANSFER ADMITTANCE
y rb , REVERSE TRANSFER ADMITTANCE (mmhos) 5.0 0 100 4.0 MPS H11 3.0 brb 2.0 MPS H10 4.0 grb 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 5.0 2.0 1.8 1.2 0.8 1000 MHz 0.4 0 0.4 grb (mmhos) 0.8 1.2 1.6 2.0 brb 1.0 jb rb (mmhos) 200
2.0
400
3.0 700
1.0
1000 MHz
4.0
400 200
8.0
10
2423
MOTOROLA
MMBTH24LT1
Motorola Preferred Device
2 EMITTER
1 2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 30 40 4.0 50 Unit Vdc Vdc Vdc mAdc
DEVICE MARKING
MMBTH24LT1 = M3A
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
Preferred devices are Motorola recommended choices for future use and best overall value.
2424
MMBTH24LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic ON CHARACTERISTICS DC Current Gain (IC = 8.0 mAdc, VCE = 10 Vdc) SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product(3) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Conversion Gain (213 MHz to 45 MHz) (IC= 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms) (60 MHz to 45 MHz) (IC = 8.0 mAdc, VCC = 20 Vdc, Oscillator Injection = 150 mVrms) 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT Ccb 400 19 CG 24 20 620 0.25 24 0.45 MHz pF dB hFE 30 Symbol Min Typ Max Unit
2425
MOTOROLA
UHF/VHF Transistor
PNP Silicon
Designed for UHF/VHF Amplifier Applications High Current Gain Bandwidth Product fT = 2000 MHz Min @ 10 mA
1 BASE
COLLECTOR 3
MMBTH69LT1
Motorola Preferred Device
2 EMITTER
3 1 2
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Symbol VCEO VCBO VEBO Value 15 15 4.0 Unit Vdc Vdc Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB)
DEVICE MARKING
MMBTH69LT1 = M3J
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 15 4.0 100 Vdc Vdc Vdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 10 Vdc) hFE 30 300
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCE = 10 Vdc, IE = 0, f = 1.0 MHz) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Preferred devices are Motorola recommended choices for future use and best overall value.
fT Crb
2000
0.35
MHz pF
2426
MOTOROLA
UHF/VHF Transistor
PNP Silicon
1 BASE
COLLECTOR 3
MMBTH81LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Symbol VCEO VCBO VEBO Value 20 20 3.0
2 EMITTER
1
DEVICE MARKING
MMBTH81LT1 = 3D
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-5 Board,(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RJA PD 556 300 2.4 RJA TJ, Tstg Symbol Min 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 20 20 3.0 100 100 Vdc Vdc Vdc nAdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 5.0 mAdc, IB = 0.5 mAdc) BaseEmitter On Voltage (IC = 5.0 mAdc, VCE = 10 Vdc) hFE VCE(sat) VBE(on) 60 0.5 0.9 Vdc Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 5.0 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) CollectorEmitter Capacitance (IB = 0, VCB = 10 Vdc, f = 1.0 MHz) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
fT Ccb Cce
600
0.85 0.65
MHz pF pF
2427
MOTOROLA
MMPQ2222 * MMPQ2222A
*Motorola Preferred Device
16
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 0.52 4.2 PD 0.8 6.4 TJ, Tstg 2.4 19.2 55 to +150 1.0 8.0 MMPQ2222 30 60 5.0 500 Four Transistors Equal Power Watts mW/C Watts mW/C C MMPQ2222A 40 75 Unit Vdc Vdc Vdc mAdc
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IB = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MMPQ2222 MMPQ2222A IEBO MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A V(BR)CEO V(BR)CBO V(BR)EBO ICBO 50 10 100 nAdc 30 40 60 75 5.0 Vdc Vdc Vdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2428
MMPQ2222 MMPQ2222A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 100 mA, VCE = 10 V) (IC = 1.0 mA, VCE = 10 V) (IC = 10 mA, VCE = 10 V) (IC = 150 mA, VCE = 10 V) (IC = 300 mA, VCE = 10 V) (IC = 500 mA, VCE = 10 V) (IC = 150 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE MMPQ2222A MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A MMPQ2222A VCE(sat) MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A VBE(sat) MMPQ2222 MMPQ2222A MMPQ2222 MMPQ2222A 1.3 1.2 2.6 2.0 0.4 0.3 1.6 1.0 Vdc 35 50 75 75 100 100 30 40 50 300 Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product(1) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 200 350 4.5 17 MHz pF pF
SWITCHING CHARACTERISTICS
TurnOn Time (VCC = 30 Vdc, VBE(off) = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) TurnOff Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ton 25 ns
toff
250
ns
2429
MOTOROLA
MMPQ2369
Motorola Preferred Device
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 0.4 3.2 PD 0.66 5.3 TJ, Tstg 1.92 15.4 55 to +150 0.72 6.4 Value 15 40 4.5 500 Four Transistors Equal Power Watts mW/C Watts mW/C C Unit Vdc Vdc Vdc mAdc
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 40 4.5 0.4 Vdc Vdc Vdc
mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2430
MMPQ2369
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 20 VCE(sat) VBE(sat) 0.25 0.9 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 450 550 2.5 3.0 4.0 5.0 MHz pF pF
SWITCHING CHARACTERISTICS
TurnOn Time (VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) TurnOff Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) 1. Pulse Test: Pulse Width ton 9.0 ns
toff
15
ns
2431
MOTOROLA
MMPQ2907 MMPQ2907A
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.52 4.2 0.8 6.4 MMPQ2907 40 60 5.0 600 Four Transistors Equal Power 1.0 8.0 2.4 19.2 55 to +150 Watts mW/C Watts mW/C C MMPQ2907A 60 Unit Vdc Vdc Vdc mAdc
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MMPQ2907 MMPQ2907A IEBO MMPQ2907 MMPQ2907A V(BR)CEO V(BR)CBO V(BR)EBO ICBO 50 10 50 nAdc 40 60 60 5.0 Vdc Vdc Vdc nAdc
REV 1
2432
MMPQ2907 MMPQ2907A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 100 Adc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 300 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE MMPQ2907A MMPQ2907A MMPQ2907/2907A MMPQ2907/2907A MMPQ2907/2907A MMPQ2907/2907A VCE(sat) MMPQ2907 MMPQ2907 MMPQ2907 VBE(sat) MMPQ2907 MMPQ2907 MMPQ2907A 1.3 2.6 2.6 0.4 1.6 1.6 Vdc 75 100 75/100 100 30/50 50 300 Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product(1) (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 200 350 6.0 20 MHz pF pF
SWITCHING CHARACTERISTICS
TurnOn Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) TurnOff Time (VCC = 6.0 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ton toff 30 100 ns ns
2433
MOTOROLA
MMPQ3467
Motorola Preferred Device
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Power Dissipation @ TA = 25C Derate above 25C Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.52 4.2 1.0 8.0 Value 40 40 5.0 1.0 Four Transistors Equal Power 1.2 9.6 2.5 20 55 to +150 Watts mW/C Watts mW/C C Unit Vdc Vdc Vdc Adc
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 5.0 200 200 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2434
MMPQ3467
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 500 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage(1) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 500 mAdc, IB = 50 mAdc) hFE VCE(sat) VBE(sat) 20 0.23 0.9 0.5 1.2 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 190 10 55 MHz pF pF
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 500 mAdc, IB1 = 50 mAdc) TurnOff Time (IC = 500 mAdc, IB1 = IB2 = 50 mAdc) 1. Pulse Test: Pulse Width ton toff 20 60 ns ns
2435
MOTOROLA
MMPQ3725
Motorola Preferred Device
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Operating and Storage Junction Temperature Range Symbol VCEO VCES VEB IC TJ, Tstg Value 40 60 5.0 1.0 55 to +150 Four Transistors Equal Power 1.4 11.2 2.5 2.0 55 to +150 Watts mW/C Watts mW/C C Unit Vdc Vdc Vdc Adc C
Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.6 4.8 1.0 8.0
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, VBE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CES V(BR)EBO ICBO 40 60 5.0 0.5 Vdc Vdc Vdc
mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2436
MMPQ3725
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) hFE 35 25 VCE(sat) VBE(sat) 0.8 75 45 0.32 0.9 200 0.45 1.1 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 50 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 275 5.1 62 MHz pF pF
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 500 mAdc, IB1 = 50 mAdc, VBE(off) = 3.8 Vdc) TurnOff Time (IC = 500 mAdc, IB1 = IB2 = 50 mAdc) 1. Pulse Test: Pulse Width ton toff 20 50 ns ns
2437
MOTOROLA
NPN Silicon
MMPQ3904
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 0.4 3.2 PD 0.66 5.3 TJ, Tstg 1.92 15.4 55 to +150 800 6.4 mW mW/C Watts mW/C C Value 40 60 6.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2438
MMPQ3904
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 50 75 VCE(sat) VBE(sat) 90 160 200 0.1 0.65 0.2 0.85 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 250 300 2.0 4.0 4.0 8.0 MHz pF pF
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 10 Vdc, VBE(off) = 0.5 Vdc, IB1 = 1.0 mAdc) TurnOff Time (IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 1. Pulse Test: Pulse Width ton toff 37 136 ns ns
2439
MOTOROLA
PNP Silicon
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Power Dissipation @ TA = 25C Derate above 25C Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.4 3.2 0.66 5.3 Value 40 40 5.0 200 Four Transistors Equal Power 800 6.4 1.92 15.4 55 to +150 mW mW/C Watts mW/C C Unit Vdc Vdc Vdc mAdc
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 5.0 50 50 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2440
MMPQ3906
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 60 75 VCE(sat) VBE(sat) 160 180 200 0.1 0.65 0.25 0.85 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cob Cib 200 250 3.3 4.8 4.5 10 MHz pF pF
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 10 mAdc, VBE(off) = 0.5 Vdc, IB1 = 1.0 mAdc) TurnOff Time (IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 1. Pulse Test: Pulse Width ton toff 43 155 ns ns
2441
MOTOROLA
1 2 3 4 5 6 7 8
16 15 14 13 12 11 10 9
MMPQ6700
Voltage and current are negative for PNP transistors
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 0.4 3.2 0.66 5.3 Value 40 40 5.0 200 Four Transistors Equal Power 0.72 6.4 1.92 15.4 55 to +150 Watts mW/C Watts mW/C C Unit Vdc Vdc Vdc mAdc
1 16
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 5.0 50 50 Vdc Vdc Vdc nAdc nAdc
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 35 50 70 VCE(sat) VBE(sat) 0.25 0.9 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width PNP NPN fT Cob Cib 10 8.0 200 4.5 MHz pF pF
2442
MOTOROLA
MMPQ6842
Voltage and current are negative for PNP transistors
16 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCB VEB IC Each Transistor Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 0.4 3.2 PD 0.66 5.3 TJ, Tstg 1.92 15.4 55 to +150 0.72 6.4 Value 30 30 4.0 200 Four Transistors Equal Power Watts mW/C Watts mW/C C Unit Vdc Vdc Vdc mAdc
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 30 30 4.0 50 50 Vdc Vdc Vdc nAdc nAdc
2443
MMPQ6842
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.5 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc, 0C Base Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc) hFE 30 50 70 0.05 0.65 0.15 0.9 Vdc Vdc
v T v 70C)
VCE(sat) VBE(sat)
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product(1) (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) PNP NPN fT Cob Cib 5.0 4.0 10 8.0 200 350 3.0 4.5 MHz pF pF
2444
MOTOROLA
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of PIN 1 damage to the die. BASE Available in 8 mm embossed tape and reel. Use the (INPUT) Device Number to order the 7 inch/3000 unit reel. Replace T1 with T3 in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Symbol VCBO VCEO IC PD R1 R2 PIN 3 COLLECTOR (OUTPUT)
MMUN2111LT1 SERIES
Motorola Preferred Devices
3 1 2
THERMAL CHARACTERISTICS
Rating Thermal Resistance Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath Symbol RJA TJ, Tstg TL Value 625 65 to +150 260 10 Unit C/W C C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMUN2111T1/D)
2445
MMUN2111LT1 SERIES
DEVICE MARKING AND RESISTOR VALUES (Continued)
Device MMUN2116LT1(2) MMUN2130LT1(2) MMUN2131LT1(2) MMUN2132LT1(2) MMUN2133LT1(2) MMUN2134LT1(2) Marking A6F A6G A6H A6J A6K A6L R1 (K) 4.7 1.0 2.2 4.7 4.7 22 R2 (K) 1.0 2.2 4.7 47 47
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS(3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2130LT1/MMUN2131LT1 (IC = 10 mA, IB = 1 mA) MMUN2115LT1/MMUN2116LT1/ MMUN2132LT1/MMUN2133LT1/MMUN2134LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MMUN2111LT1 MMUN2112LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2113LT1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
2. New devices. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2446
MMUN2111LT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MMUN2115LT1 MMUN2116LT1 MMUN2131LT1 MMUN2132LT1 (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MMUN2130LT1 Input Resistor MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185
R1/R2
2447
MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2111LT1
250 PD , POWER DISSIPATION (MILLIWATTS) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
200
25C
150
50
0 50
50
100
150
100
10
50
25C TA = 25C
10
0.1
0.01 0.001 0 1 2
2448
MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2112LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = 25C 25C 1 75C h FE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
0.1
0.01
100
75C
25C TA = 25C
10
0.1 VO = 5 V
0.01 0 1 2 3 4 5 6 7
50
0.001
10
0.1
10
20
30
40
50
2449
MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2113LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 h FE , CURRENT GAIN (NORMALIZED)
25C
0.01
40
10
100
100
TA = 75C
25C 25C
10 1
0.6
0.4
0.1
0.2
0.01 VO = 5 V
50
0.001
10
0.1
10
40
50
2450
MMUN2111LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2114LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 25C VCE = 10 V 25C TA = 75C
0.01
0.001
80
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
10
+12 V
LOAD 0.1
10
40
50
2451
MOTOROLA
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace T1 with T3 in the Device Number to order the13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Symbol VCBO VCEO IC PD R1 PIN 3 COLLECTOR (OUTPUT)
MMUN2211LT1 SERIES
Motorola Preferred Devices
3 1
THERMAL CHARACTERISTICS
Thermal Resistance Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RJA TJ, Tstg TL 625 65 to +150 260 10 C/W C C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMUN2211T1/D)
2452
MMUN2211LT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS(3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 350 350 5.0 15 30 200 150 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1 (IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1 MMUN2232LT1/MMUN2233LT1/MMUN2234LT1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k ) MMUN2211LT1 MMUN2212LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2213LT1
VCE(sat)
VOL VOH 4.9 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k ) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k ) MMUN2230LT1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k ) MMUN2215LT1 MMUN2216LT1 MMUN2233LT1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
Vdc
2453
MMUN2211LT1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(3)
Input Resistor MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2211LT1/MMUN2212LT1/MMUN2213LT1 MMUN2214LT1 MMUN2215LT1/MMUN2216LT1 MMUN2230LT1/MMUN2231LT1/MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055 0.38 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 1.0 0.1 0.47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185 0.56 k
Resistor Ratio
R1/R2
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
2454
MMUN2211LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2211LT1
250 PD , POWER DISSIPATION (MILLIWATTS) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 25C 75C
200
0.1
150
0.01
50
50
150
0.001
80
1000 h FE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V Cob , CAPACITANCE (pF) TA = 75C 25C 25C 100
4 f = 1 MHz lE = 0 V TA = 25C
10
100
50
25C TA = 25C
10
0.1
0.001
0.1
10
50
2455
MMUN2211LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2212LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 25C 75C h FE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75C 25C 25C 100
0.1
0.01
4 f = 1 MHz lE = 0 V TA = 25C
100
75C
25C TA = 25C
10
0.1
0.01 VO = 5 V 0 2 4 6 8 10
10
20
30
40
50
0.001
0.1
10
20
30
40
50
2456
MMUN2211LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2213LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = 25C 25C 1 1000 h FE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
75C
0.1
10
100
100 75C 10
25C TA = 25C
0.6
0.4
0.1
0.2
0.01 VO = 5 V
50
2457
MMUN2211LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MMUN2214LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 300 250 200 25C 150 100 50 0 VCE = 10 TA = 75C 25C
0.01
0.001
80
80 90 100
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
TA = 25C 10
25C 75C 1
0.1
10
40
50
2458
MMUN2211LT1 SERIES
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED LOAD
+12 V
VCC
OUT IN LOAD
2459
MOTOROLA
MPQ2222 MPQ2222A*
*Motorola Preferred Device
14 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD TJ, Tstg 0.65 5.2 MPQ2222 30 60 5.0 500 Total Device 1.9 15.2 Watts mW/C C MPQ2222A 40 Unit Vdc Vdc Vdc mAdc
55 to +150
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 66 Unit C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO MPQ2222 MPQ2222A V(BR)CBO MPQ2222 MPQ2222A V(BR)EBO MPQ2222 MPQ2222A ICBO MPQ2222 MPQ2222A IEBO 50 10 100 nAdc 5.0 6.0 nAdc 60 75 Vdc 40 40 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MPQ2221/D)
2460
MPQ2222 MPQ2222A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 300 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mA, IB = 50 mA) Base Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mA, IB = 50 mA) hFE MPQ2222A MPQ2222A MPQ2222,A MPQ2222,A MPQ2222 MPQ2222A VCE(sat) MPQ2222 MPQ2222A MPQ2222 MPQ2222A VBE(sat) MPQ2222 MPQ2222A MPQ2222 MPQ2222A 0.6 1.3 1.2 2.6 2.0 0.4 0.3 1.6 1.0 Vdc 35 50 75 100 30 40 300 Vdc
SWITCHING CHARACTERISTICS
TurnOn Time (VCC = 30 Vdc, VBE(off) = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) TurnOff Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ton MPQ2222A toff MPQ2222A 285 ns 35 ns
200
200
9.9 V
619 0
1.0 k
1N916 0.5 V SCOPE Rin > 100 k ohms Cin 12 pF RISE TIME 5.0 ns 500 ms 13.8 V 3.0 V SCOPE Rin > 100 k ohms Cin 12 pF RISE TIME 5.0 ns
2461
MPQ2222 MPQ2222A
4.0 h FE, DC CURRENT GAIN (NORMALIZED) 3.0 2.0 25C 1.0 0.7 0.5 0.3 0.2 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) 55C TJ = 175C VCE = 1.0 V VCE = 10 V
+0.8
25C TO 175C
0.8
1.6
Figure 4. ON Voltages
NOISE FIGURE
(VCE = 10 Vdc, TA = 25C)
6.0 5.0 NF, NOISE FIGURE (dB) 4.0 3.0 2.0 1.0 0 0.1 NF, NOISE FIGURE (dB) 10 f = 1.0 kHz 8.0 IC = 10 mA RS = 4.3 kW IC = 100 mA RS = 1.0 kW IC = 1.0 mA 100 mA 10 mA 6.0
4.0
2.0
0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
2462
MPQ2222 MPQ2222A
f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 500 300 200 100 70 50 30 20 10 VCE = 20 V TJ = 25C f = 100 MHz 30 TJ = 25C 20 C, CAPACITANCE (pF)
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20 30
3.0 0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
Figure 9. Capacitances
QT, TOTAL CONTROL CHARGE HIGH GAIN TYPES LOW GAIN TYPES ALL TYPES
10 3.0
300 t s ,t f , STORAGE AND FALL TIME (ns) ts IC/IB = 10 100 70 50 IC/IB = 10 30 20 LOW GAIN TYPES TJ = 25C 10 20 30 50 70 100 200 300 tf IC/IB = 20 t s ,t f , STORAGE AND FALL TIME (ns) 200
300 200 ts IC/IB = 10 100 70 50 30 20 HIGH GAIN TYPES TJ = 25C IC/IB = 10 tf IC/IB = 20
2463
MPQ2222 MPQ2222A
GENERATOR RISE TIME 2.0 ns PW 200 ns +30 V DUTY CYCLE = 2.0% 200 SCOPE Rin > 100 k ohms Cin 12 pF RISE TIME 5.0 ns +16.2 V 1.0 k 0 > 200 ns 0 1N916 RISE TIME 3.0% DUTY CYCLE = 2.0% +30 V
200 SCOPE Rin > 100 k ohms Cin 12 pF RISE TIME 5.0 ns
9.9 V
619
13.8 V
3.0 V
Figure 15. Storage Time and Fall Time Equivalent Test Circuit
2464
MOTOROLA
MPQ2369
Motorola Preferred Device
14 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD TJ, Tstg 0.5 5.0 Value 15 40 4.5 500 Total Device 1.5 15 Watts mW/C C Unit Vdc Vdc Vdc mAdc
55 to +125
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 83 Unit C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 40 4.5 0.4 Vdc Vdc Vdc
mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2465
MPQ2369
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 20 VCE(sat) VBE(sat) 0.25 0.9 Vdc Vdc
SWITCHING CHARACTERISTICS
TurnOn Time (VCC = 3.0 Vdc, VBE = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) TurnOff Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) 1. Pulse Test: Pulse Width ton toff 9.0 15 ns ns
2466
MPQ2369
+10 V 980 SCOPE +6.0 V 0 4.0 V PULSE WIDTH = 300 ns tf 1.0 ns DUTY CYCLE 2.0% 500 CS 3.0 pF
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 1.0 2.0 3.0 5.0 7.0 10 td @ VBE(off) = 1.5 V 20 30 50 70 100 tr @ VCC = 3.0 V tr @ VCC = 10 V t, TIME (ns) IC/IB = 10 TJ = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) tf VCC = 10 V IC/IB = 10 TJ = 25C
ts
VCC = 3.0 V
VCC = 3.0 V
270 +10.75 V 3.3 k 0 1.5 V PULSE WIDTH = 300 ns tr < 1.0 ns DUTY CYCLE 2.0% CS < 4.0 pF 0 4.15 V PULSE WIDTH = 300 ns tf 1.0 ns DUTY CYCLE 2.0% SCOPE +10.75 V 3.3 k
270 SCOPE
CS < 4.0 pF
2467
MPQ2369
f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 5.0 TJ = 25C 3.0 C, CAPACITANCE (pF) 2.0 Cob Cib 2.0 k VCE = 10 V f = 100 MHz 1.0 k 700 500
300 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
Figure 6. Capacitance
500 300 200 h FE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 V, VOLTAGE (VOLTS) 25C 55C TJ = 150C
1.4 TJ = 25C 1.2 1.0 0.8 0.6 0.4 0.2 0 0.2 0.5 1.0 VCE(SAT) @ IC/IB = 10 VBE(SAT) @ IC/IB = 10 VBE(ON) @ VCE = 1.0 V
2.0
5.0
10
20
50
100
200
Figure 9. ON Voltages
1.0
+2.0
*APPLIES FOR IC/IB hFE/3.0 +1.0 *qVC FOR VCE(SAT) 0 55C TO 25C 1.0 25C TO 150C
0.4
25C TO 150C
0.2
0 0.05
1.0
2.0
2468
MOTOROLA
MPQ2483 MPQ2484*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 0.825 6.7 TJ, Tstg 2.4 19.2 Watts mW/C C 900 7.2 mW mW/C Value 40 60 6.0 50 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc CASE 64606, STYLE 1 TO116
14 1
55 to +150
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 134 70 26 Unit C/W C/W % %
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 45 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 60 6.0 20 20 Vdc Vdc Vdc nAdc nAdc
1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2469
MPQ2483 MPQ2484
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain(2) (IC = 0.1 mAdc, VCE = 5.0 Vdc) hFE MPQ2483 MPQ2484 MPQ2483 MPQ2484 MPQ2483 MPQ2484 VCE(sat) VBE(sat) 0.58 0.70 0.7 0.8 0.13 0.15 0.35 0.5 Vdc 100 200 150 300 150 300 Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage(2) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)
2470
MOTOROLA
MPQ6100A MPQ6600A1*
Voltage and Current are negative for PNP Transistors
*Motorola Preferred Device
MPQ6100A TYPE A
14 13 12 11 10 9 8
COMPLEMENTARY
MPQ6600A1 TYPE B
14 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 0.825 6.7 TJ, Tstg 55 to +150 2.4 19.2 Watts mW/C C 900 7.2 mW mW/C MPQ6100A MPQ6600A1 45 60 5.0 50 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance(1) Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit C/W C/W % %
1. RJA is measured with the device soldered into a typical printed circuit board.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2471
MPQ6100A MPQ6600A1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) V(BR)CEO MPQ6100A, 6600A1 V(BR)CBO 60 V(BR)EBO 5.0 ICBO 10 nAdc Vdc 45 Vdc Vdc
ON CHARACTERISTICS(2)
DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 Adc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 100 Adc) Base Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 100 Adc) hFE MPQ6100A, 6600A1 MPQ6100A, 6600A1 MPQ6100A, 6600A1 MPQ6100A, 6600A1 VCE(sat) VBE(sat) 0.8 0.25 Vdc 100 150 150 125 Vdc
2472
MPQ6100A MPQ6600A1
SPOT NOISE FIGURE
(VCE = 10 Vdc, TA = 25C)
12 NOISE FIGURE (dB) 1 mA NOISE FIGURE (dB) 10 8 6 4 2 0 100 A 10 A 1.0 k 10 k Rs, SOURCE RESISTANCE (OHMS) 100 k
12 10 8 6 4 2 0 10 A 1 mA 100 A
100 k
IC = 100 A, RS = 30 k hFE, DC CURRENT GAIN IC = 10 A, RS = 100 k IC = 1.0 mA, RS = 1.0 k IC = 10 A, RS = 10 k IC = 100 A, RS = 3.0 k 800
10
2473
MOTOROLA
14
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC MPQ2906 MPQ2907 40 60 5.0 600 Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD TJ, Tstg 0.65 6.5 Total Device 1.9 19 Watts mW/C C MPQ2907A 60 Unit Vdc Vdc Vdc mAdc
55 to +125
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 66 Unit C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IE = 0) 1. Pulse Test: Pulse Width MPQ2906, MPQ2907 MPQ2907A IEBO MPQ2906,7 Only 50 nAdc V(BR)CEO MPQ2906, MPQ2907 MPQ2907A V(BR)CBO V(BR)EBO ICBO 40 60 60 5.0 50 Vdc Vdc nAdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
2474
ON CHARACTERISTICS
DC Current Gain(1) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 300 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mA, IB = 500 mA) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 500 mA, IB = 50 mA) hFE MPQ2907A MPQ2907A MPQ2906 MPQ2907 MPQ2907A MPQ2907A MPQ2906 MPQ2907 MPQ2906 MPQ2907 MPQ2907A VCE(sat) MPQ2906, MPQ2907 MPQ2907A VBE(sat) MPQ2906, MPQ2907 MPQ2906, MPQ2907 MPQ2907A 1.3 2.6 2.6 0.4 1.6 1.6 Vdc 75 100 35 75 100 100 40 100 20 30 50 300 Vdc
SWITCHING CHARACTERISTICS
TurnOn Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) TurnOff Time (VCC = 6.0 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 1. Pulse Test: Pulse Width ton MPQ2907A Only toff MPQ2907A Only 180 ns 45 ns
30 INPUT Zo = 50 W PRF = 150 PPS RISE TIME 2.0 ns 1.0 k 0 16 V 200 ns 50 INPUT Zo = 50 W PRF = 150 PPS RISE TIME 2.0 ms 1.0 k 0 30 V 200 ns 50
+15 V
6.0
200
1.0 k
37
2475
+25C
55C 0.3 0.2 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) VCE = 10 V VCE = 1.0 V
1.2
+25C TO +175C
1.0
2.0 55C TO +25C 3.0 1.0 2.0 5.0 10 20 50 100 200 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 4. ON Voltages
NOISE FIGURE
(VCE = 10 V, TA = 25C)
6.0 5.0 NF, NOISE FIGURE (dB) 4.0 3.0 2.0 1.0 0 0.1 VCE = 10 Vdc TA = 25C NF, NOISE FIGURE (dB) IC = 10 mA RS = 4.7 kW IC = 1.0 mA RS = 0.7 kW IC = 100 mA RS = 1.2 kW 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) 10 IC = 10 mA 100 mA f = 1.0 kHz
8.0
6.0
4.0
2.0
1.0 mA
2476
200
10 7.0 5.0
100 80 60
3.0 0.5 0.7 1.0 2.0 3.0 5.0 10 20 30 50 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitance
500 300 200 100 70 50 30 20 10 5.0 7.0 td Q, CHARGE (pC) t, TIME (ns) tr IC/IB = 10 TJ = 25C VCC = 30 V, VBE(off) = 2.0 V VCC = 10 V, VBE(off) = 0 V
5000 3000 2000 1000 700 500 300 200 QA, ACTIVE REGION CHARGE VCC = 30 V TJ = 25C QT, TOTAL CONTROL CHARGE
10
20
30
50
70 100
200 300
500
10
20
30
50
70 100
200 300
500
500 300 t s , STORAGE TIME (ns) 200 100 70 50 30 20 IC/IB = 20 IC/IB = 10 ts ts 1/8 tf t f , FALL TIME (ns)
500 300 200 IC/IB = 20 100 70 50 30 20 10 5.0 7.0 IC/IB = 10 VCC = 30 V IB1 = IB2 TJ = 25C
10 5.0 7.0
10
20
30
50
70 100
200 300
500
10
20
30
50
70 100
200 300
500
2477
30 V
200 SCOPE
30 V
200 SCOPE
1.0 k 0 16 V
3.0 V
2478
MOTOROLA
MPQ3467
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 650 5.2 PD 1.25 10 TJ, Tstg 55 to +150 3.2 25.6 Watts mW/C C 1500 12 mW mW/C Value 40 40 5.0 1.0 Four Transistors Equal Power Unit Vdc Vdc Vdc Adc CASE 64606, STYLE 1 TO116
14 1
THERMAL CHARACTERISTICS
RqJC Junction to Case 100 39 45 5.0 RqJA Junction to Ambient 193 83.2 55 10
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 5.0 200 200 Vdc Vdc Vdc nAdc nAdc
1. Second Breakdown occurs at power levels greater than 2 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2479
MPQ3467
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain(2) (IC = 500 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage(2) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(2) (IC = 500 mAdc, IB = 50 mAdc) hFE VCE(sat) VBE(sat) 20 0.23 0.90 0.5 1.2 Vdc Vdc
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 500 mAdc, IB1 = 50 mAdc) TurnOff Time (IC = 500 mAdc, IB1 = IB2 = 50 mAdc) 2. Pulse Test: Pulse Width ton toff 40 90 ns ns
2480
MPQ3467
200 V(sat) , SATURATION VOLTAGE (VOLTS) IC = 10 IB1 = 10 IB2 VCC = 30 V TJ = 25C TJ = 125C F = 10, 20 F = 10 F = 20 ts ts 1/8 tf 20 50 70 100 200 300 500 700 1000 IC, COLLECTOR CURRENT (mA) 1.6 1.4 1.2 1.0 VBE(sat) 0.8 0.6 0.4 0.2 0 50 70 100 200 300 500 700 1000 IC, COLLECTOR CURRENT (mA) MAX VCE(sat) MIN F = 10 TJ = 25C MAX
100 70 50
30
TJ = 125C TJ = 25C
30
TJ = 55C
20
10 50
70
100
500
700
1000
2481
MOTOROLA
MPQ3725
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCES VEBO IC One Transistor Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 1.0 8.0 TJ, Tstg 55 to +150 2.5 20 Watts mW/C C Value 40 60 5.0 1.0 Four Transistors Equal Power Unit Vdc Vdc Vdc Adc
14 1
THERMAL CHARACTERISTICS
Characteristic Symbol Max One Transistor Thermal Resistance, Junction to Ambient(1) RqJA 125 Effective For Four Transistors 50 C/W Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CES V(BR)EBO ICBO 40 60 5.0 0.5 Vdc Vdc Vdc
mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
2482
MPQ3725
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(2)
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) hFE 35 25 VCE(sat) VBE(sat) 0.8 75 45 0.32 0.9 200 0.45 1.1 Vdc Vdc
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 500 mAdc, IB1 = 50 mAdc VBE(off) = 3.8 Vdc) TurnOff Time (IC = 500 mAdc, IB1 = IB2 = 50 mAdc) 2. Pulse Test: Pulse Width ton 20 35 ns
toff
50
60
ns
2483
MPQ3725
2.0 IC , COLLECTOR CURRENT (AMP) 1.0 0.5 0.3 0.2 TJ = 200C 0.1 0.05 0.03 0.02 3.0 SECOND BREAKDOWN LIMITED THERMAL LIMITATION @ TC = 25C PULSE DUTY CYCLE 10% APPLICABLE TO RATED BVCEO 4.0 6.0 8.0 10 20 30 40 60 dc
10 ms
TYPICAL DC CHARACTERISTICS
400 TJ = 125C h FE , DC CURRENT GAIN 200 25C 100 80 60 40 V, VOLTAGE (VOLTS) VCE = 1.0 V 1.4 TJ = 25C 1.2 1.0 0.8 0.6 0.4 0.2 20 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) 0 10 VCE(sat) @ IC/IB = 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10
55C
Figure 4. ON Voltages
+2.5
+2.0 +1.5 +1.0 +0.5 0 0.5 1.0 1.5 2.0 2.5 10 20 30 50 *qVC FOR VCE(sat)
0.6
0.4
0.2
0 0.5
50
100
200
500
100
200 300
500
1000
2484
MPQ3725
TYPICAL DYNAMIC CHARACTERISTICS
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 500 VCE = 10 Vdc f = 100 MHz TJ = 25C 100 70 50 C, CAPACITANCE (pF) 30 20 Cob Cib TJ = 25C
300 200
100 70 50 4.0
10 7.0 5.0
6.0
10
20
40
60
100
200
400
3.0 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
Figure 8. Capacitance
200 100 50 t, TIME (ns) 30 20 10 5.0 3.0 2.0 10 20 30 td @ VBE(off) = 0 V VBE(off) = 3.8 Vdc VCC = 30 Vdc 50 100 200 300 500 1000 IC /IB = 10 TJ = 25C
200 tf @ IC/IB = 10 100 tr @ VCC = 10 Vdc tr @ VCC = 30 Vdc t, TIME (ns) 70 50 30 20 tf @ IC/IB = 20 ts @ IC/IB = 20 ts @ IC/IB = 10 VCC = 10 Vdc TJ = 25C
1000
10
1.0
0.1
0.01 0 20 40 60 80 100 120 140 160 180 200 TJ, JUNCTION TEMPERATURE (C)
2485
MOTOROLA
14
13
12
11
10
MPQ3762
PNP
14
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 750 5.98 PD 1.25 10 TJ, Tstg 55 to +150 3.2 25.6 Watts mW/C C 1700 13.6 mW mW/C Value 40 40 5.0 1.5 Four Transistors Equal Power Unit Vdc Vdc Vdc Adc
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance(1) Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 100 39 46 5.0 Junction to Ambient 167 73.5 56 10 Unit C/W C/W % %
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 5.0 100 100 Vdc Vdc Vdc nAdc nAdc
2486
MPQ3762
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(2)
DC Current Gain (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) hFE 35 30 20 VCE(sat) VBE(sat) 0.9 1.0 1.25 1.4 0.3 0.6 0.55 0.9 Vdc 70 65 35 Vdc
SWITCHING CHARACTERISTICS
TurnOn Time (VCC = 30 Vdc, IC = 1.0 Adc, IB1 = 100 mAdc, VBE(off) = 2.0 Vdc) TurnOff Time (VCC = 30 Vdc, IC = 1.0 Adc, IB1 = IB2 = 100 mAdc) 2. Pulse Test: Pulse Width ton toff 50 120 ns ns
2487
MPQ3762
200 V(sat) , SATURATION VOLTAGE (VOLTS) IC = 10 IB1 = 10 IB2 VCC = 30 V TJ = 25C TJ = 125C F = 10, 20 F = 10 F = 20 ts ts 1/8 tf 20 50 70 100 200 300 500 700 1000 IC, COLLECTOR CURRENT (mA) 1.6 1.4 1.2 1.0 VBE(sat) 0.8 0.6 0.4 0.2 0 50 70 100 200 300 500 700 1000 IC, COLLECTOR CURRENT (mA) MAX VCE(sat) MIN F = 10 TJ = 25C MAX
100 70 50
30
TJ = 125C TJ = 25C
30
TJ = 55C
20
10 50
70
100
500
700
1000
2488
MOTOROLA
MPQ3798 MPQ3799*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 0.5 4.0 PD 0.825 6.7 TJ, Tstg 55 to +150 2.4 19.2 Watts m/C C 0.9 7.2 Watts mW/C MPQ3798 40 60 5.0 50 Four Transistors Equal Power MPQ3799 60 Unit Vdc Vdc Vdc mAdc CASE 64606, STYLE 1 TO116
14 1
THERMAL CHARACTERISTICS
RqJC Junction to Case 151 52 34 2.0 RqJA Junction to Ambient 250 139 70 26
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO MPQ3798 MPQ3799 V(BR)CBO V(BR)EBO ICBO IEBO 40 60 60 5.0 10 20 Vdc Vdc nAdc nAdc Vdc
1. Second breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2489
MPQ3798 MPQ3799
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) hFE MPQ3798 MPQ3799 MPQ3798 MPQ3799 MPQ3798 MPQ3799 MPQ3798 MPQ3799 VCE(sat) VBE(sat) 0.62 0.68 0.7 0.8 0.12 0.07 0.2 0.25 Vdc 100 225 150 300 150 300 125 250 Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) (IC = 1.0 mAdc, IB = 100 mAdc) Base Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) (IC = 1.0 mAdc, IB = 100 mAdc)
2490
MPQ3798 MPQ3799
1000 500 h FE , CURRENT GAIN h FE , CURRENT GAIN 0.1 1000 500
200 100
200 100
1.0
1.0
0.4
0.4
Figure 3. ON Voltages
Figure 4. ON Voltages
2491
MOTOROLA
MPQ3904
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg 2.4 19.2 55 to +150 Watts mW/C C 900 7.2 mW mW/C Value 40 60 6.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc
14 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit C/W C/W % %
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 40 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2492
MPQ3904
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 50 75 VCE(sat) VBE(sat) 90 160 200 0.1 0.65 0.2 0.85 Vdc Vdc
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 10 mAdc, VBE(off) = 0.5 Vdc, IB1 = 1.0 mAdc) TurnOff Time (IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 1. Pulse Test: Pulse Width ton toff 37 136 ns ns
2493
MPQ3904
DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 k 0 0.5 V < 1 ns CS < 4 pF* 9.1 V < 1 ns 1N916 CS < 4 pF* 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k
TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cibo 3.0 2.0 Cobo 5000 3000 2000 1000 700 500 300 200 100 70 50 QT QA VCC = 40 V IC/IB = 10
1.0 0.1
0.2 0.3
2.0 3.0
5.0 7.0 10
20 30 40
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
Figure 3. Capacitance
2494
MPQ3904
500 300 200 100 70 50 30 20 10 7 5 td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 2.0 V 50 70 100 200 40 V 15 V 10 7 5 IC/IB = 10 500 300 200 t r, RISE TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
100 70 50 30 20 10 7 5 IC/IB = 10
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
SOURCE RESISTANCE = 200 W IC = 1.0 mA SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1.0 k IC = 50 mA
IC = 0.5 mA IC = 50 mA
f, FREQUENCY (kHz)
Figure 9.
Figure 10.
2495
MPQ3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50
h fe , CURRENT GAIN
200
20 10 5
100 70 50
2 1
30
0.1
0.2
0.1
0.2
5.0
10
1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10
0.2
0.1
0.2
0.1 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
2496
MPQ3904
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
1.2 TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 0.2 0 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ C)
1.0
2.0
5.0
10
20
50
100
200
20
40
60
80
100
120
140
160
180 200
2497
MOTOROLA
MPQ3906
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg 55 to +150 2.4 19.2 Watts mW/C C 900 7.2 mW mW/C Value 40 40 5.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc
14 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit C/W C/W % %
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 40 40 5.0 50 50 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2498
MPQ3906
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 60 75 VCE(sat) VBE(sat) 160 180 200 0.1 0.65 0.25 0.85 Vdc Vdc
SWITCHING CHARACTERISTICS
TurnOn Time (IC = 10 mAdc, VBE(off) = 0.5 Vdc, IB1 = 1.0 mAdc) TurnOff Time (IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 1. Pulse Test: Pulse Width ton toff 43 155 ns ns
3V +9.1 V 275 < 1 ns +0.5 V 10 k 0 CS < 4 pF* 10.6 V 300 ns DUTY CYCLE = 2% 10 < t1 < 500 ms DUTY CYCLE = 2% t1 10.9 V 1N916 10 k < 1 ns
3V 275
CS < 4 pF*
2499
MPQ3906
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25C TJ = 125C 10 7.0 CAPACITANCE (pF) Q, CHARGE (pC) 5.0 Cobo Cibo 3.0 2.0 5000 3000 2000 1000 700 500 300 200 100 70 50 VCC = 40 V IC/IB = 10
QT QA
1.0 0.1
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS (VOLTS)
20 30 40
1.0
2.0 3.0
200
Figure 3. Capacitance
500 300 200 100 70 50 30 20 10 7 5 IC/IB = 10 500 300 200
100 70 50 30 20 10 7 5 IC/IB = 10
TIME (ns)
tr @ VCC = 3.0 V 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
2500
MPQ3906
TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
5.0 SOURCE RESISTANCE = 200 W IC = 1.0 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 2.0 k IC = 50 mA 12 f = 1.0 kHz 10 IC = 0.5 mA 8 6 4 2 0 IC = 50 mA IC = 100 mA IC = 1.0 mA
4.0
3.0
2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 0.2 0.4 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 40 100
1.0
0 0.1
0.1
0.2
40
100
Figure 7.
Figure 8.
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
300 hoe, OUTPUT ADMITTANCE (m mhos) 100 70 50 30 20
h fe , DC CURRENT GAIN
200
100 70 50
10 7
30
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10
0.1
0.2
0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
2501
MPQ3906
TYPICAL STATIC CHARACTERISTICS
2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 55C +25C VCE = 1.0 V
0.1 0.1
0.2
0.3
0.5
0.7
1.0
20
30
50
70
100
200
0.6
0.4
0.2
0 0.01
0.02
0.03
0.05
0.07
0.1
0.7
1.0
2.0
3.0
5.0
7.0
10
+25C TO +125C
0.6
55C TO +25C
0.2
1.0
2.0
100
200
20
40
160
180 200
2502
MOTOROLA
14
13
12
11
10
COMPLEMENTARY
MPQ6502 TYPE B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) MPQ6001, MPQ6002, MPQ6502 Derate above 25C MPQ6001, MPQ6002, MPQ6502 Total Device Dissipation @ TC = 25C MPQ6001, MPQ6002, MPQ6502 Derate above 25C MPQ6001, MPQ6002, MPQ6502 Operating and Storage Junction Temperature Range PD Watts 0.65 1.25 mW/C 5.18 PD Watts 1.0 3.0 mW/C 8.0 TJ, Tstg 55 to +150 24 C 10 Value 30 60 5.0 500 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc
14 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Each Die Effective, 4 Die Coupling Factors Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 MPQ6001, MPQ6002, MPQ6502 MPQ6001, MPQ6002, MPQ6502 MPQ6001, MPQ6002, MPQ6502 MPQ6001, MPQ6002, MPQ6502 Junction to Case 125 41.6 30 20 Junction to Ambient 193 100 % 60 24 Unit C/W
REV 3
2503
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 30 60 5.0 30 30 Vdc Vdc Vdc nAdc nAdc
ON CHARACTERISTICS
DC Current Gain(2) (IC = 1.0 mAdc, VCE = 10 Vdc) hFE MPQ6001 MPQ6002, MPQ6502 MPQ6001 MPQ6002, MPQ6502 MPQ6001 MPQ6002, MPQ6502 MPQ6001 MPQ6002, MPQ6502 VCE(sat) VBE(sat) 1.3 2.0 0.4 1.4 Vdc 25 50 35 75 40 100 20 30 Vdc
(IC = 300 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc) Base Emitter Saturation Voltage(2) (IC = 150 mAdc, IB = 15 mAdc) (IC = 300 mAdc, IB = 30 mAdc)
SWITCHING CHARACTERISTICS
TurnOn Time (VCC = 30 Vdc, VEB = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc, Figure 1) TurnOff Time (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) 2. Pulse Test: Pulse Width ton 30 ns
toff
225
ns
2504
TJ = 25C
0.8
1.6
Figure 2. ON Voltages
NOISE FIGURE
(VCE = 10 Vdc, TA = 25C)
6.0 5.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 4.0 3.0 2.0 1.0 0 0.1 10 f = 1.0 kHz 8.0 IC = 10 mA RS = 4.3 kW IC = 100 mA RS = 1.0 kW IC = 1.0 mA 100 mA 10 mA
6.0
4.0
2.0
0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS)
2505
MOTOROLA
MPQ6426
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 30 40 12 500 Four Die Equal Power 900 7.2 2400 19.2 mW mW/C mW mW/C C Unit Vdc Vdc Vdc mAdc
14 1
Each Die Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 500 4.0 825 6.7
55 to +150
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit C/W C/W % %
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CEO 30 V(BR)CBO 40 V(BR)EBO 12 ICBO IEBO 100 100 nAdc nAdc Vdc Vdc Vdc
1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
2506
MPQ6426
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(2)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 5000 10,000 VCE(sat) VBE(on) 2.0 1.5 Vdc Vdc
2507
MPQ6426
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
500 BANDWIDTH = 1.0 Hz RS 0 i n , NOISE CURRENT (pA) 10 mA 100 mA 20 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) IC = 1.0 mA 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 100 mA 10 mA
IC = 1.0 mA
200 BANDWIDTH = 10 Hz TO 15.7 kHz 70 50 30 20 1.0 mA 10 1.0 2.0 5.0 10 20 50 100 200 500 1000 100 mA IC = 10 mA NF, NOISE FIGURE (dB) 100
14 12 10 8.0 6.0 4.0 2.0 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 RS, SOURCE RESISTANCE (kW) RS, SOURCE RESISTANCE (kW) IC = 1.0 mA 100 mA BANDWIDTH = 10 Hz TO 15.7 kHz 10 mA
DYNAMIC CHARACTERISTICS
20 h fe , SMALLSIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
2.0
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
0.5
1.0
2.0
5.0
10
20
50
100
200
500
Figure 5. Capacitance
2508
MOTOROLA
MPQ6700
14 13 12 11 10 9 8
MPQ6502
For Specifications, See MPQ6001 Data
COMPLEMENTARY
4 TYPE B
MPQ6600A1
For Specifications, See MPQ6100A Data
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg 2400 19.2 55 to +150 mW mW/C C CASE 64606, STYLE 1 TO116 TYPE B 900 7.2 mW mW/C
14 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit C/W C/W % %
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) V(BR)CEO 40 V(BR)CBO 40 V(BR)EBO 5.0 ICBO IEBO 50 50 nAdc nAdc Vdc Vdc Vdc
1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2509
MPQ6700
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(2)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 30 50 70 VCE(sat) VBE(sat) 0.9 0.25 Vdc Vdc
2510
MPQ6700
500 300 200 h FE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 TJ = 125C 25C 55C h FE, DC CURRENT GAIN 500 300 200 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 TJ = 125C
25C
55C
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(on) @ VCE = 1.0 V 0.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10
0.6
0.4
0.4
0.2
VCE(sat) @ IC/IB = 10
0.2 VCE(sat) @ IC/IB = 10 100 200 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
0 0.2
0.5
1.0
2.0
5.0
10
20
50
Figure 3. ON Voltage
Figure 4. ON Voltage
+2.0
+1.0
1.0
1.0
55C TO 25C
2.0
55C TO 25C
3.0 0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
3.0 0.2
0.5
1.0
2.0
5.0
10
20
50 100 200
2511
MPQ6700
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
0.6
0.6
0.4
0.4
0.2
0.2 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA)
5.0
10 20
50 100
50
500 300 200 100 70 50 30 20 10 7.0 5.0 2.0 3.0 2.0 V VBE(off) = 0 5.0 7.0 10 20 30 50 70 100 200 IC/IB = 10 TJ = 25C
500 300 200 100 70 50 30 20 Tr @ VCC = 3.0 V 10 7.0 5.0 2.0 3.0 5.0 7.0 10 2.0 V td @ VBE(off) = 0 20 30 50 70 100 200 tr @ VCC = 40 V IC/IB = 10 TJ = 25C
t, TIME (ns)
tr @ VCC = 3.0 V 40 V
t, TIME (ns)
500 300 200 100 70 50 30 20 10 7.0 5.0 2.0 3.0 tf @ IC/IB = 10 ts = ts = 1/8 tf VCC = 3.0 V IB1 = IB2 TJ = 25C 20 t, TIME (ns) IC/IB = 10 IC/IB = 20
500 300 200 100 70 50 30 20 10 7.0 5.0 2.0 3.0 tf @ IC/IB = 10 IC/IB = 20 ts = ts 1/8 tf VCC = 40 V IB1 = IB2 IC/IB = 10 IC/IB = 20
t, TIME (ns)
5.0 7.0 10
20
30
50 70 100
200
5.0 7.0 10
20
30
50 70 100
200
2512
MPQ6700
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 500 TJ = 25C VCE = 20 V f = 100 MHz 700 500 TJ = 25C VCE = 20 V f = 100 MHz
300 200
2.0
3.0
5.0 7.0
10
20
30
3.0 2.0 1.5 1.0 0.7 0.06 0.1 0.2 0.4 0.6 1.0 2.0
Cib
4.0 6.0 10
20
40 60
1.0 2.0
4.0
10
20
40
2513
MOTOROLA
MPQ6842
14 13 12 11 10 9 8 COMPLEMENTARY
4 TYPE B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Each Transistor Total Device Dissipation @ TA = 25C(1) Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 500 4.0 PD 825 6.7 TJ, Tstg 55 to +150 2400 19.2 mW mW/C C 900 7.2 mW mW/C Value 30 30 4.0 200 Four Transistors Equal Power Unit Vdc Vdc Vdc mAdc CASE 64606, STYLE 1 TO116 TYPE B
14 1
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 151 52 34 2.0 Junction to Ambient 250 139 70 26 Unit C/W C/W % %
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IE = 0) V(BR)CEO 30 V(BR)CBO 30 V(BR)EBO 4.0 ICBO IEBO 50 50 nAdc nAdc Vdc Vdc Vdc
1. Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%.
2514
MPQ6842
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(2)
DC Current Gain (IC = 0.5 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc, 0C T 70C) Base Emitter Saturation Voltage (IC = 0.5 mAdc, IB = 0.05 mAdc) hFE 30 50 70 VCE(sat) VBE(sat) 0.65 0.9 0.05 0.15 Vdc Vdc
2515
MPQ6842
500 300 200 h FE, DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 TJ = 125C 25C 55C h FE, DC CURRENT GAIN 500 300 200 100 70 50 30 20 10 7.0 5.0 0.2 VCE = 1.0 V VCE = 5.0 V 0.5 1.0 2.0 5.0 10 20 50 100 200 TJ = 125C
25C
55C
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(on) @ VCE = 1.0 V 0.6 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10
0.6
0.4
0.4
0.2
VCE(sat) @ IC/IB = 10
0.2 VCE(sat) @ IC/IB = 10 100 200 0 0.2 0.5 1.0 2.0 4.0 10 20 40 100
0 0.2
0.5
1.0
2.0
5.0
10
20
50
Figure 3. ON Voltage
Figure 4. ON Voltage
+2.0
+1.0
1.0
1.0
55C TO 25C
2.0
55C TO 25C
3.0 0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
3.0 0.2
0.5
1.0
2.0
5.0
10
20
50 100 200
2516
MPQ6842
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
0.6
0.6
0.4
0.4
0.2
0.2 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA)
5.0
10 20
50 100
50
VCC +5 V 5 7 22 TP3
NOTES: 1. Unless otherwise noted, all resistors carbon composition 1/ W 5%, all capacitors dipped mica 2%. 4 2. Use short interconnect wiring with good power and ground buses. 3. TP1 thru TP4 are coaxial connectors to accept scope probe tip and provide a good ground. 4. Device under test is MPQ6842. 5. 160 pF load does not include stray or scope probe capacitance. 6. Scope probe resistance > 5 kW. Scope probe capacitance < 10 pF.
0.1 mF CERAMIC
50% tPLH
50% 0.3 V tr
2517
MOTOROLA
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector CurrentContinuous Symbol VCEO VCBO VEBO IC Each Die Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 750 5.98 PD 1.25 10 TJ, Tstg 3.2 25.6 55 to +150 Watts mW/C C 1700 13.6 mW mW/C MPQ7041 150 150 MPQ7042 200 200 5.0 500 Four Die Equal Power MPQ7043 250 250 Unit Vdc
14
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 100 39 46 5.0 Junction to Ambient 167 73.5 56 10 Unit C/W C/W % %
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO MPQ7041 MPQ7042 MPQ7043 V(BR)CBO MPQ7041 MPQ7042 MPQ7043 V(BR)EBO 5.0 ICBO MPQ7041 MPQ7042 MPQ7043 100 100 100 nAdc 150 200 250 Vdc 150 200 250 Vdc Vdc
Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 150 Vdc, IE = 0) (VCB = 180 Vdc, IE = 0)
Preferred devices are Motorola recommended choices for future use and best overall value.
2518
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 40 VCE(sat) VBE(sat) 0.7 0.9 0.3 0.5 Vdc 45 60 80 Vdc
DC CHARACTERISTICS
200 VCE = 10 V h FE, DC CURRENT GAIN TJ = 125C 1.2 V, VOLTAGE (VOLTS) 100 70 55C 50 25C 1.0 0.8 0.6 0.4 0.2 0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 VBE(on) @ IC/IB = 10 V 1.4 TJ = 25C
30 20 1.0
5.0
Figure 2. ON Voltages
2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0
IC/IB = 10
25C TO 125C
55C TO 25C
55C TO 125C
5.0 7.0
10
20
30
50
70
100
2519
MOTOROLA
14
13
12
11
10
MPQ7051
Voltage and current are negative for PNP transistors
COMPLEMENTARY
4 TYPE B
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 150 150 5.0 500 Four Die Equal Power 1700 13.6 3.2 25.6 mW mW/C Watts mW/C C Unit Vdc Vdc Vdc mAdc CASE 64606, STYLE 1 TO116 TYPE B
14 1
Each Die Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD PD TJ, Tstg 750 5.98 1.25 10
55 to +150
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 100 39 46 5.0 Junction to Ambient 167 73.5 56 10 Unit C/W C/W % %
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO 150 V(BR)CBO 150 V(BR)EBO 5.0 ICBO IEBO 100 250 nAdc nAdc Vdc Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2520
MPQ7051
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 35 25 VCE(sat) VBE(sat) 0.9 0.7 Vdc Vdc
2521
MPQ7051
DC CHARACTERISTICS
100 70
25C
100 70 50
55C
55C 50
30 20 1.0
30 20 1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
2.0 3.0
5.0 7.0 10
20 30
50 70 100
1.4 TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 VBE(on) @ IC/IB = 10 V V, VOLTAGE (VOLTS)
1.4 TJ = 25C 1.2 1.0 0.8 0.6 0.4 0.2 5.0 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE(sat) @ IC/IB = 10 5.0 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V
Figure 3. ON Voltages
Figure 4. ON Voltages
2.5
2.5 IC/IB = 10
2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0
2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0
25C TO 125C
55C TO 25C
55C TO 125C
55C TO 125C
5.0 7.0
10
20
30
50
70
100
5.0 7.0 10
20 30
50 70 100
2522
MOTOROLA
MPQ7091 MPQ7093*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC MPQ7091 150 150 5.0 500 Four Die Equal Power 1700 13.6 3.2 25.6 mW mW/C Watts mW/C C MPQ7093 250 250 Unit Vdc Vdc Vdc mAdc
14 1
Each Die Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range PD 750 5.98 PD 1.25 10 TJ, Tstg
55 to +150
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Coupling Factors Each Die Effective, 4 Die Q1Q4 or Q2Q3 Q1Q2 or Q3Q4 Junction to Case 100 39 46 5.0 Junction to Ambient 167 73.5 56 10 Unit C/W C/W % %
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 120 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MPQ7091 MPQ7093 IEBO 100 V(BR)CEO MPQ7091 MPQ7093 V(BR)CBO MPQ7091 MPQ7093 V(BR)EBO 5.0 ICBO 250 250 nAdc nAdc 150 250 Vdc 150 250 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2523
MPQ7091 MPQ7093
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 35 25 VCE(sat) VBE(sat) 0.7 0.9 0.3 0.5 Vdc 40 55 50 Vdc
DC CHARACTERISTICS
200 VCE = 10 V h FE, DC CURRENT GAIN TJ = 125C 1.2 V, VOLTAGE (VOLTS) 100 70 50 25C 1.0 0.8 0.6 0.4 0.2 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0 1.0 2.0 3.0 VCE(sat) @ IC/IB = 10 5.0 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 1.4 TJ = 25C
55C
30 20 1.0
5.0 7.0 10
20 30
50 70 100
Figure 2. ON Voltages
2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0
55C TO 125C
5.0 7.0 10
20 30
50 70 100
2524
MOTOROLA
Chopper Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS404A
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 35 40 25 150 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) Emitter Cutoff Current (VBE = 10 Vdc, IC = 0) 2. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 35 40 25 100 100 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2525
MPS404A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 12 mAdc, VCE = 0.15 Vdc) Collector Emitter Saturation Voltage (IC = 12 mAdc, IB = 0.4 mAdc) (IC = 24 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 12 mAdc, IB = 0.4 mAdc) (IC = 24 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 0.85 1.0 0.15 0.2 Vdc 30 400 Vdc
100
0.9 NORMAL MODE INVERTED MODE 0.82 VBE(sat) @ IC/IB = 2 VBC(sat) @ IE/IB = 2 TJ = 25C
80
60 VCE(sat) @ IC/IB = 10
0.74
0.66
20
0.58
0 1.0
2.0 3.0
5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) IE, EMITTER CURRENT (mA)
50 70 100
0.50 1.0
2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) IE, EMITTER CURRENT (mA)
50 70 100
2526
MPS404A
NORMAL MODE
200 10 7.0 hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 100 80 60 55C 40 30 20 25C 5.0 TJ = 125C 55C 25C
INVERTED MODE
10 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
1.0 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
TJ = 125C 25C
55C
50 70 100
1.0 1.0
2.0 3.0
50 70 100
0.5
TJ = 25C
0.3
0.3
0.2
0.2
0.1
0.1
1.0
2.0
5.0
0 0.05 0.1
0.2
10
20
50
2527
MPS404A
100 rec(on), EMITTERCOLLECTOR ON RESISTANCE (OHMS) 70 50 30 20 20
NOTE: The dynamic resistance between the emitter and NOTE: collector is measured with the device operated in NOTE: the Inverted Mode.
10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2.0 0.05 0.1 0.2 0.5 1.0 2.0
5.0
10
20
50
2.0 k 1.0 k 700 500 t, TIME (ns) 300 200 100 70 50 30 20 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 tr VCC = 10 V IC/IB = 0 TJ = 25C t, TIME (ns)
300 200
tf
50 70 100
1.0 k TO SCOPE
VCC (6.0 V)
Voltages and resistor values shown are for IC = 10 mA. IC/IB = 10 and IB1 = IB2. Resistor values changed to obtain curves in Figures 11 and 12.
MEASUREMENT PROCEDURE C1 is increased until the toff time of the output waveform is decreased to 0.2 s, QS is then calculated by QS = C1 Vin. QS3 or QS7 by BLine Electronics or equivalent may also be used.
VOLTAGE WAVEFORMS 0 6.0 V Vout 6.0 V >5.0 s Vin tr, tf < 15 ns 10% toff
2528
MOTOROLA
Amplifier Transistors
COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg MPS650 MPS750 40 60 5.0 2.0 625 5.0 1.5 12 55 to +150 MPS651 MPS751 60 80 Unit Vdc Vdc Vdc Adc mW mW/C Watt mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter Base Breakdown Voltage (IC = 0, IE = 10 Adc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 V, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. MPS650, MPS750 MPS651, MPS751 IEBO V(BR)CEO MPS650, MPS750 MPS651, MPS751 V(BR)CBO MPS650, MPS750 MPS651, MPS751 V(BR)EBO ICBO 0.1 0.1 0.1 Adc 60 80 5.0 Vdc Adc 40 60 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2529
ON CHARACTERISTICS(1)
DC Current Gain (IC = 50 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) (IC = 1.0 A, VCE = 2.0 V) (IC = 2.0 A, VCE = 2.0 V) Collector Emitter Saturation Voltage (IC = 2.0 A, IB = 200 mA) (IC = 1.0 A, IB = 100 mA) BaseEmitter On Voltage (IC = 1.0 A, VCE = 2.0 V) Base Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA) hFE 75 75 75 40 VCE(sat) VBE(on) VBE(sat) 0.5 0.3 1.0 1.2 Vdc Vdc Vdc
NPN
300 270 240 hFE, DC CURRENT GAIN 210 180 150 120 90 60 30 0 10 20 50 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) 55C 25C TJ = 125C hFE, DC CURRENT GAIN VCE = 2.0 V 250 225 200 175 150 125 100 75 50 25 0 10 20 55C 25C TJ = 125C
PNP
VCE = 2.0 V
2530
NPN
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A TJ = 25C
PNP
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 IC = 10 mA IC = 100 mA 50 100 200 500 IC = 500 mA IC = 2.0 A TJ = 25C
0 0.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 5 IB, BASE CURRENT (mA)
TA = 25C
WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 100
2531
MOTOROLA
Amplifier Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS918* MPS3563
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPS918 15 30 3.0 50 350 2.8 0.85 6.8 55 to +150 MPS3563 12 30 2.0 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 357 147 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 3.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO MPS918 MPS3563 V(BR)CBO MPS918 MPS3563 V(BR)EBO MPS918 MPS3563 ICBO MPS918 MPS3563 10 50 3.0 2.0 nAdc 30 30 Vdc 15 12 Vdc Vdc
1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 1.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2532
MPS918 MPS3563
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(2) (IC = 3.0 mAdc, VCE = 1.0 Vdc) (IC = 8.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE MPS918 MPS3563 VCE(sat) MPS918 VBE(sat) MPS918 1.0 Vdc 20 20 200 0.4 Vdc
FUNCTIONAL TEST
CommonEmitter Amplifier Power Gain (IC = 6.0 mAdc, VCB = 12 Vdc, f = 200 MHz) (IC = 8.0 mAdc, VCE = 10 Vdc, f = 200 MHz) (Gfd + Gre 20 dB) Gpe MPS918 MPS3563 Pout MPS918 MPS918 25 % 15 14 30 mW dB
Power Output (IC = 8.0 mAdc, VCB = 15 Vdc, f = 500 MHz) Oscillator Collector Efficiency (IC = 8.0 mAdc, VCB = 15 Vdc, Pout = 30 mW, f = 500 MHz) 2. Pulse Test: Pulse Width
2533
MOTOROLA
MPS2222 MPS2222A*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPS2222 30 60 5.0 600 625 5.0 1.5 12 55 to +150 MPS2222A 40 75 6.0 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125C) (VCB = 50 Vdc, IE = 0, TA = 125C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MPS2222 MPS2222A MPS2222 MPS2222A MPS2222 MPS2222A MPS2222A ICBO MPS2222 MPS2222A MPS2222 MPS2222A IEBO MPS2222A IBL MPS2222A 20 nAdc 0.01 0.01 10 10 100 nAdc Adc V(BR)CEO V(BR)CBO V(BR)EBO ICEX 30 40 60 75 5.0 6.0 10 Vdc Vdc Vdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2534
MPS2222 MPS2222A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) hFE 35 50 75 35 100 50 30 40 VCE(sat) MPS2222 MPS2222A MPS2222 MPS2222A VBE(sat) MPS2222 MPS2222A MPS2222 MPS2222A 0.6 1.3 1.2 2.6 2.0 0.4 0.3 1.6 1.0 Vdc 300 Vdc
MPS2222A only
MPS2222 MPS2222A
(IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc)
mmhos
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time
MPS2222A only
td tr ts tf 10 25 225 60 ns ns ns ns
( (VCC = 30 Vdc, VBE(off) = 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) ( (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity.
2535
MPS2222 MPS2222A
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V +16 V 0 2 V 1.0 to 100 s, DUTY CYCLE 2.0% 1 k < 2 ns 200 +16 V 0 CS* < 10 pF 14 V < 20 ns 1k 1N914 CS* < 10 pF 1.0 to 100 s, DUTY CYCLE 2.0% + 30 V 200
4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.
TJ = 125C
25C 100 70 50 30 20 10 0.1 55C VCE = 1.0 V VCE = 10 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0 0.005
0.01
0.02 0.03
0.05
0.1
0.2
2.0
3.0
5.0
10
20
30
50
2536
MPS2222 MPS2222A
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 ts = ts 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C
t, TIME (ns)
tf
10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE
10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 A 100 A 500 A 1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
5.0 10
20
50 100
0 50
100 200
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
300 200
100 70 50 1.0
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS)
20 30
50
2.0
50
70 100
Figure 9. Capacitances
2537
MPS2222 MPS2222A
1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 0 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVB for VBE RqVC for VCE(sat) +0.5
0.2
2538
MOTOROLA
Switching Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS2369 MPS2369A*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD TJ, Tstg Value 15 40 40 4.5 200 625 5.0 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 200 Unit C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 10 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 125C) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) 1. Pulse Test: Pulse Width V(BR)CEO MPS2369A V(BR)CES MPS2369,A V(BR)CBO MPS2369,A V(BR)EBO MPS2369,A ICBO MPS2369,A ICES MPS2369,A 0.4 30 0.4 Adc Adc 4.5 Vdc 40 Vdc 40 Vdc 15 Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2539
MPS2369 MPS2369A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc, TA = 55C) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = 55C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125C) (IC = 10 mAdc, IB = 1.0 mAdc, TA = 55C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) hFE MPS2369A MPS2369 MPS2369 MPS2369A MPS2369A MPS2369A MPS2369 MPS2369A VCE(sat) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A VBE(sat) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A 0.7 0.5 0.85 1.02 1.15 1.60 0.25 0.20 0.30 0.25 0.50 Vdc 20 40 40 20 30 20 20 120 120 Vdc
SWITCHING CHARACTERISTICS
Storage Time (IB1 = IB2 = IC = 10 mAdc) (Figure 3) TurnOn Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) (Figure 1) TurnOff Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Figure 2) 1. Pulse Test: Pulse Width ts MPS2369,A ton MPS2369,A toff MPS2369,A 10 18 ns 8.0 12 ns 5.0 13 ns
2540
MPS2369 MPS2369A
+10.6 V 0 1.5 V t1 3.0 V 270
< 1.0 ns
3.3 k
+10.75 V 0 4.15 V
t1
3.3 k
+6.0 V 0 4.0 V
t1
10 V 980
500
2541
MOTOROLA
MPS2907 MPS2907A*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg 500 to +150 Watts mW/C C mW mW/C MPS2907 40 60 5.0 600 MPS2907A 60 Unit Vdc Vdc Vdc mAdc
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 150C) Base Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) 1. Pulse Test: Pulse Width MPS2907 MPS2907A MPS2907 MPS2907A IB MPS2907 MPS2907A V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO 0.02 0.01 20 10 50 nAdc 40 60 60 5.0 50 Vdc Vdc Vdc nAdc Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
2542
MPS2907 MPS2907A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE MPS2907 MPS2907A MPS2907 MPS2907A MPS2907 MPS2907A MPS2907, MPS2907A MPS2907 MPS2907A VCE(sat) VBE(sat) 1.3 2.6 0.4 1.6 Vdc 35 75 50 100 75 100 100 30 50 300 Vdc
SWITCHING CHARACTERISTICS
TurnOn Time Delay Time Rise Time TurnOff Time Storage Time Fall Time (VCC = 6.0 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Fi Ad ) (Figure 2) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figures 1 and 5) 15 Ad ) (Fi d ton td tr toff ts tf 45 10 40 100 80 30 ns ns ns ns ns ns
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity.
INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 16 V 200 ns 50 1.0 k
30 V 200
INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 30 V 200 ns
+15 V
1.0 k 1.0 k 50
1N916
2543
MPS2907 MPS2907A
TYPICAL CHARACTERISTICS
3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 55C
0.2 0.3
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200 300
500
1.0
0.4
0.2
0 0.005
0.01
0.2
2.0
3.0
5.0 7.0 10
20 30
50
300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT tr
500 VCC = 30 V IC/IB = 10 TJ = 25C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V 200 300 500 10 7.0 5.0 5.0 7.0 10 ts = ts 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C
t, TIME (ns)
2544
MPS2907 MPS2907A
TYPICAL SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C
10 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, Rs = 430 500 A, Rs = 560 50 A, Rs = 2.7 k 100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0
6.0
6.0
4.0
4.0
2.0
2.0
5.0 10
20
50
100
50
100
200
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)
VCE = 20 V TJ = 25C
1.0
10
20 30
5.0
10
20
50
100 200
500 1000
Figure 9. Capacitances
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(on) @ VCE = 10 V
+0.5 0 RqVC for VCE(sat) 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2 0.5 1.0 2.0 RqVB for VBE
0.6
0.4
0.2
0 0.1 0.2
50 100 200
500
5.0 10 20
2545
MOTOROLA
Switching Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS3638A
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value 25 25 25 4.0 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Emitter Sustaining Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0) (VCE = 15 Vdc, VBE = 0, TA = 65C) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) Base Current (VCE = 15 Vdc, VBE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES IEBO IB 0.035 2.0 35 0.035 nA 25 25 25 4.0 Vdc Vdc Vdc Vdc
mAdc
mAdc
(Replaces MPS3638/D)
2546
MPS3638A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(2)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 300 mAdc, VCE = 2.0 Vdc) Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc) (IC = 300 mAdc, IB = 30 mAdc) Base Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc) (IC = 300 mAdc, IB = 30 mAdc) hFE 80 100 100 20 VCE(sat) VBE(sat) 0.80 1.1 2.0 0.25 1.0 Vdc Vdc
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time TurnOn Time TurnOff Time (VCC = 10 Vdc IC = 300 mAdc IB1 = 30 mAdc) Vdc, mAdc, ( (VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc, IB2 = 30 mAdc) (IC = 300 mAdc, IB1 = 30 mAdc) (IC = 300 mAdc, IB1 = 30 mAdc, IB2 = 30 mAdc) td tr ts tf ton toff 20 70 140 70 75 170 ns ns ns ns ns ns
2547
MPS3638A
SWITCHING TIME EQUIVALENT TEST CIRCUIT
30 V < 2 ns +2 V 0 1.0 k 16 V 10 to 100 s, DUTY CYCLE = 2% CS* < 10 pF 200 +14 V 0 1.0 k 16 V 1.0 to 100 s, DUTY CYCLE = 2% CS* < 10 pF < 20 ns 30 V 200
+ 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope
TRANSIENT CHARACTERISTICS
25C 30 20 CAPACITANCE (pF) 100C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 10 20 10 7.0 5.0 Ccb
VCC = 30 V IC/IB = 10
QT QA
0.2 0.3
2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS)
20
30
300
500
Figure 3. Capacitances
2548
MPS3638A
TRANSIENT CHARACTERISTICS (Continued)
25C 100C
100 70 50 t r , RISE TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
200 IC/IB = 10 t s, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts = ts 1/8 tf 30 20 IC/IB = 20
10
20
30
50
70
100
200
300
500
2549
MPS3638A
SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C Bandwidth = 1.0 Hz
10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k NF, NOISE FIGURE (dB) 8
0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C selected from the 2N4402 line, and the same units were This group of graphs illustrates the relationship between used to develop the correspondinglynumbered curves on hfe and other h parameters for this series of transistors. To each graph. obtain these curves, a highgain and a lowgain unit were
1000 700 500 hfe , CURRENT GAIN 300 200 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4402 UNIT 1 2N4402 UNIT 2
100 70 50
100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 2N4402 UNIT 1 2N4402 UNIT 2 3.0 5.0 7.0 10
Figure 13. Output Admittance Motorola SmallSignal Transistors, FETs and Diodes Device Data
MPS3638A
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 55C
0.2
0.3
0.5
0.7
1.0
2.0
30
50
70
100
200
300
500
1.0 0.8
0.2
0 0.005
0.01
0.02
0.03
0.2
2.0
3.0
5.0
7.0
10
20
30
50
0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2
0.6
VBE(sat) @ VCE = 10 V
0.4
0.2
0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500
2551
MOTOROLA
Switching Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS3640
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 12 12 4.0 80 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 6.0 Vdc, VBE = 0) (VCE = 6.0 Vdc, VBE = 0, TA = 65C) Base Current (VCE = 6.0 Vdc, VEB = 0) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES IB 0.01 1.0 10 nAdc 12 12 12 4.0 Vdc Vdc Vdc Vdc Adc
2552
MPS3640
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 10 mAdc, VCE = 0.3 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = 65C) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 30 20 VCE(sat) VBE(sat) 0.75 0.75 0.95 1.0 1.5 0.2 0.6 0.25 Vdc 120 Vdc
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time TurnOn Time (VCC = 6.0 Vdc, IC = 50 mAdc, IB1 = 5.0 mAdc) (VCC = 1.5 Vdc, IC = 10 mAdc, IB1 = 0.5 mAdc) TurnOff Time (VCC = 6.0 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc) (VCC = 1.5 Vdc, IC = 10 mAdc, IB1 = IB2 = 0.5 mAdc) 1. Pulse Test: Pulse Width (VCC = 6.0 Vdc, IC = 50 mAdc, VBE(off) = 1.9 Vdc, IB1 = 5.0 mAdc) 5 0 Ad ) (VCC = 6.0 Vdc, IC = 50 mAdc, IB1 = IB2 = 5.0 mAdc) td tr ts tf ton toff 35 75 25 60 ns 10 30 20 12 ns ns ns ns ns
VBB = +1.9 V VCC = 6.0 V 1.0 k 0 0.1 F 680 110 Vout 5.0 V
Vin 6.8 V TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 100 ns Zin = 50 OHMS NOTES: Collector Current = 50 mA, FALL TIME 1.0 ns NOTES: TurnOn and TurnOff Time NOTES: Base Currents = 5.0 mA.
Vin 0 TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 200 ns Zin = 50 OHMS NOTES: Collector Current = 10 mA, FALL TIME 1.0 ns NOTES: TurnOn and TurnOff Time NOTES: Base Currents = 0.5 mA.
Figure 1.
Figure 2.
2553
MPS3640
200 VCE = 1.0 V hFE, DC CURRENT GAIN 100 70 50 30 20 0.2 10 0.1 0.2 5.0 10 20 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 50 100 0 0.1 0.2 VCE(sat) @ IC/IB = 10 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 TJ = 125C V, VOLTAGE (VOLTS) 25C 55C 1.4 1.2 1.0 0.8 VBE(on) @ VCE = 1.0 V 0.6 0.4 TJ = 25C VBE(sat) @ IC/IB = 10
Figure 4. On Voltages
+0.5
25C to 125C
0.4
1.0 25C to 125C RVB for VBE 2.0 0.1 0.2 55C to 25C 50 100
0.2
1.5
0 0.01 0.02
2.0
5.0
10
2000 TJ = 25C f = 100 MHz 1000 800 600 400 1.0 V VCE = 10 V C, CAPACITANCE (pF)
200 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
2.0 3.0
5.0 7.0 10
20
Figure 8. Capacitance
2554
MOTOROLA
Switching Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS3646
Motorola Preferred Device
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous 10 ms Pulse Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value 15 40 40 5.0 300 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector Emitter Sustaining Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) (VCE = 20 Vdc, VBE = 0, TA = 65C) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES 0.5 3.0 40 15 40 5.0 Vdc Vdc Vdc Vdc
mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2555
MPS3646
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 0.5 Vdc) (IC = 300 mA, VCE = 1.0 Vdc) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mAdc) (IC = 30 mA, IB = 3.0 mA, TA = 65C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) (IC = 300 mAdc, IB = 30 mA) hFE 30 25 15 0.73 120 0.2 0.28 0.5 0.3 0.95 1.2 1.7
VCE(sat)
Vdc
VBE(sat)
Vdc
SWITCHING CHARACTERISTICS
TurnOn Time Delay Time Rise Time TurnOff Time Fall Time ( (VCC = 10 Vdc, IC = 300 mAdc, IB1 = IB2 = 30 mAdc) ) (Figure 1) (VCC = 10 Vdc, IC = 300 mAdc, IB1 = 30 mAdc) Vd Ad Ad ) (Figure 1) ton td tr toff tf ts 18 10 15 28 15 18 ns ns ns ns ns ns
Storage Time (VCC = 10 Vdc, IC = 10 mAdc, IB1 = IB2 = 10 mAdc) (Figure 2) 1. Pulse Test: Pulse Width
V3 0 V2
2556
MPS3646
CURRENT GAIN CHARACTERISTICS
100 70 h FE, DC CURRENT GAIN 50 TJ = 125C 25C 30 20 15C 55C MPS3646 VCE = 1 V
10 1.0
2.0
3.0
5.0
7.0
30
50
70
100
200
200 TJ = 125C h FE, DC CURRENT GAIN 100 70 50 25C 15C 55C MPS3646 VCE = 1 V
30 20 1.0
2.0
3.0
5.0
7.0
30
50
70
100
200
270 t1 +10 V V 0 <1 ns 9.2 k PULSE WIDTH (t1) = 5 s DUTY CYCLE = 2% 3V 8 pF CS < 4 pF C COPT TIME C < COPT C=0
If IB were suddenly removed, the transistor would continue to conduct until QS is removed from the active regions through an external path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a charge, QT, of opposite polarity, equal in magnitude, can be stored on an external capacitor, C, to neutralize the internal charge and considerably reduce the turnoff time of the transistor. Figure 3 shows the test circuit and Figure 4 the turnoff waveform. Given QT from Figure 13, the external C for worstcase turnoff in any circuit is: C = QT/V, where V is defined in Figure 3.
2557
MPS3646
ON CONDITION CHARACTERISTICS
1.0 VCE, MAXIMUM COLLECTOREMITTER VOLTAGE (VOLTS) MPS3646 TJ = 25C IC = 10 mA 0.6 50 mA 100 mA 200 mA
0.8
0.4
0.2
0.1
0.2
0.3
0.5
0.7
1.0
5.0
7.0
10
20
30
50
1.0 VCE, MAXIMUM COLLECTOREMITTER VOLTAGE (VOLTS) MPS3646 TJ = 25C IC = 10 mA 0.6 50 mA 100 mA 200 mA
0.8
0.4
0.2
0.1
0.2
0.3
0.5
0.7
1.0
5.0
7.0
10
20
30
50
IC/IB = 10 TJ = 25C
MAX VCE(sat)
( 55C to 25C)
1.0
2.0 3.0
200
40
200
2558
MPS3646
DYNAMIC CHARACTERISTICS
200 100 t d, DELAY TIME (ns) 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 0V td @ VEB(off) = 3 V t r , RISE TIME (ns) VCC = 10 V TJ = 25C 200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 VCC = 3 V VCC = 10 V IC/IB = 10 TJ = 25C TJ = 125C
2V
200 100 70 50 30 20 10 7.0 5.0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 200 IC/IB = 10 IC/IB = 20 VCC = 10 V TJ = 25C TJ = 125C
30 20
IC/IB = 20
10 7.0 5.0 ts
^ ts 1/8 tf
IB1 = IB2
1000 700 500 300 200 QT 100 70 50 30 VCC = 3 V VCC = 10 V VCC = 3 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 QA IC/IB = 10 TJ = 25C TJ = 125C
5.0
3.0
Cobo
2.0 0.1 0.2 0.5 1.0 2.0 REVERSE BIAS (Vdc) 5.0 10
20
2559
MOTOROLA
MPS3904
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 60C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD PD TJ, Tstg Value 40 60 6.0 100 625 5.0 450 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C mW Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) Base Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL 40 60 6.0 50 50 Vdc Vdc Vdc nAdc nAdc
REV 1
2560
MPS3904
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 40 70 100 60 30 VCE(sat) VBE(sat) 0.65 0.85 1.1 0.2 0.3 Vdc 300 Vdc
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time ( (VCC = 3.0 Vdc, VBE(off) = 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) ( (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) td tr ts tf 35 50 900 90 ns ns ns ns
2561
MPS3904
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 A BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 A 10 A IC = 1.0 mA 300 A 100 A BANDWIDTH = 1.0 Hz RS
100 A
30 A
BANDWIDTH = 1.0 Hz
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 7. Wideband 2562 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MPS3904
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C
200
25C
55C 100 80 60 40 0.004 0.006 0.01 MPS3904 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100
0.8 IC = 1.0 mA 10 mA 50 mA
0.6
100 mA
60 200 A 40 100 A 20
0.4
0.2
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
1.4
1.6 0.8
2563
MPS3904
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts
t, TIME (ns)
VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100
50 70
100
500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS3904 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPS3904 hfe 200 @ IC = 1.0 mA
2564
MPS3904
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.05
0.1
0.2
0.5
1.0
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 40 20 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO
Figure 19A.
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms
100 s 10 s 1.0 s
TC = 25C TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
dc
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
40
Figure 20.
2565
MOTOROLA
MPS3906
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 5.0 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) Base Cutoff Current (VCE = 30 Vdc, VEB(off) = 3.0 Vdc) 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICEX IBL 40 40 5.0 50 50 Vdc Vdc Vdc nAdc nAdc
REV 1
2566
MPS3906
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE 60 80 100 60 30 VCE(sat) VBE(sat) 0.65 0.85 0.95 0.25 0.4 Vdc 300 Vdc
mmhos
dB
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time ( (VCC = 3.0 Vdc, VBE(off) = + 0.5 Vdc, IC = 10 mAdc, IB1 = 1.0 mAdc) (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc) 1 0 Ad ) td tr ts tf 35 50 600 90 ns ns ns ns
2567
MPS3906
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 3.0 2.0 1.0 mA 100 A 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 A 100 A 30 A 10 A IC = 1.0 mA
BANDWIDTH = 1.0 Hz RS
BANDWIDTH = 1.0 Hz
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A)
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 5. Wideband 2568 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MPS3906
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C 25C
200
55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100
0.6
0.4
40
100 A 50 A
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 55C to 25C 0.8 25C to 125C 1.6 25C to 125C
55C to 25C
2.4 0.1
50
100
Figure 9. On Voltages
2569
MPS3906
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 1.0 ts
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS3906 hfe 200 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPS3906 hfe 200 @ IC = 1.0 mA
2570
MPS3906
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.05
0.1
0.2
0.5
1.0
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25C
1.0 ms 100 s dc TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10 s
1.0 s
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
40
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICEO
4 0
2 0
2571
MOTOROLA
Amplifier Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS4124
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value 25 30 5.0 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector Base Breakdown Voltage (IC = 10 mA, IE = 0) Emitter Base Breakdown Voltage (IC = 0, IE = 10 mA) Collector Cutoff Current (VCB = 20 V, IE = 0) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) V(BR)CEO 25 V(BR)CBO 30 V(BR)EBO 5.0 ICBO IEBO 50 50 nAdc nAdc Vdc Vdc Vdc
(Replaces MPS4123/D)
2572
MPS4124
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mA, VCE = 1.0 V) (IC = 50 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) hFE 120 60 VCE(sat) VBE(sat) 0.95 0.3 Vdc 360 Vdc
2573
MOTOROLA
Amplifier Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS4126
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg Value 25 25 4.0 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) Collector Base Breakdown Voltage (IC = 10 mA, IE = 0) Emitter Base Breakdown Voltage (IC = 0, IE = 10 mA) Collector Cutoff Current (VCB = 20 V, IE = 0) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) V(BR)CEO 25 V(BR)CBO 25 V(BR)EBO 4.0 ICBO IEBO 50 50 nAdc nAdc Vdc Vdc Vdc
(Replaces MPS4125/D)
2574
MPS4126
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 2.0 mA, VCE = 1.0 V) (IC = 50 mA, VCE = 1.0 V) Collector Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) Base Emitter Saturation Voltage (IC = 50 mA, IB = 5.0 mA) hFE 120 60 VCE(sat) VBE(sat) 0.95 0.4 Vdc 360 Vdc
2575
MOTOROLA
Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS4250
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value 40 40 40 5.0 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/C mW mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 5.0 mA) Collector Emitter Sustaining Voltage(1) (IC = 5.0) Collector Base Breakdown Voltage (IC = 10 mA) Emitter Base Breakdown Voltage (IE = 10 mA) Collector Cutoff Current (VCB = 50 V) (VCB = 40 V, TA = 65C) Emitter Cutoff Current (VEB = 3.0 V) 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. V(BR)CES V(BR)CEO(sus) V(BR)CBO V(BR)EBO ICBO IEBO 10 3.0 20 nA mA nA 40 40 40 5.0 Vdc Vdc Vdc Vdc
2576
MPS4250
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) Collector Emitter Saturation Voltage(1) (IC = 10 mA, IB = 0.5 mA) Base Emitter Saturation Voltage(1) (IC = 10 mA, IB = 0.5 mA) hFE 250 250 VCE(sat) VBE(sat) 0.25 0.9 Vdc Vdc
2577
MOTOROLA
MPS5179
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD PD Tstg Value 12 20 2.5 50 200 1.14 300 1.71 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C mW mW/C C
1 2 3
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.001 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.01 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 150C) VCEO(sus) V(BR)CBO V(BR)EBO ICBO 0.02 1.0 12 20 2.5 Vdc Vdc Vdc Adc
ON CHARACTERISTICS
DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) VBE(sat) 25 250 0.4 1.0 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2578
MPS5179
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
TYPE 1N3195 TYPE 1N3195 L3 1200 91 L1 C2 2.0 10 10 k 1200 Q 1.0 5.0 EXTERNAL SHIELD L2 0.1 F 0.001 F RFC 1.0 H 0.1 F +VCC 1200 2.0 10 C7 TO 50 LOAD
DC COMMON
2.0 10 C6
L1 13/4 Turns, #18 AWG, 0.5 L, 0.5 Diameter L2 2 Turns, #16 AWG, 0.5 L, 0.5 Diameter L3 2 Turns, #13 AWG, 0.25 L, 0.5 Diameter (Position 1/4 from L2)
Figure 1. 200 MHz Amplifier Power Gain and Noise Figure Circuit
2579
MOTOROLA
Amplifier Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS6428
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 60 6.0 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Collector Cutoff Current (VCE = 30 Vdc) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO ICES ICBO IEBO 50 60 0.025 0.01 0.01 Vdc Vdc
mA mA mA
2580
MPS6428
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (VCE = 5.0 Vdc, IC = 0.01 mAdc) (VCE = 5.0 Vdc, IC = 0.1 mAdc) (VCE = 5.0 Vdc, IC = 1.0 mAdc) (VCE = 5.0 Vdc, IC = 10 mAdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 100 mAdc, IB = 5.0 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 250 250 250 250 VCE(sat) VBE(on) 0.56 0.2 0.6 0.66 Vdc 650 Vdc
mmhos
2581
MOTOROLA
Amplifier Transistor
NPN Silicon
2 BASE
COLLECTOR 3
MPS6507
1 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 20 30 3.0 50 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (2) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0, TA = 60C) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 50 1.0 nAdc mAdc 20 30 3.0 Vdc Vdc Vdc
ON CHARACTERISTICS
DC Current Gain(2) (IC = 2.0 mAdc, VCE = 10 Vdc) hFE 25 75
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) SmallSignal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, f = 20 MHz) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. fT Cobo hfe 700 20 800 1.25 2.5 MHz pF
2582
MOTOROLA
Amplifier Transistors
COLLECTOR 3 2 BASE
1 EMITTER
COLLECTOR 3 2 BASE
1 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage MPS6521 MPS6523 Collector Base Voltage MPS6521 MPS6523 Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 40 4.0 100 625 5.0 1.5 12 55 to +150 25 Vdc mAdc mW mW/C Watts mW/C C Symbol VCEO 25 25 Vdc
1 2 3
NPN
PNP
Unit Vdc
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 0.5 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0) MPS6521 MPS6523 V(BR)CEO V(BR)EBO ICBO 0.05 0.05 25 4.0 Vdc Vdc
mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MPS6520/D)
2583
ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 2.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 50 mAdc, IB = 5.0 mAdc) hFE MPS6521 MPS6521 MPS6523 MPS6523 VCE(sat) 150 300 150 300 600 600 0.5 Vdc
2584
9.1 V
< 1.0 ns
1N916
100 A
30 A
2585
BANDWIDTH = 1.0 Hz
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 7. Wideband
2586
TJ = 125C
200
25C
55C 100 80 60 40 0.004 0.006 0.01 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100
0.6
60 200 A 40 100 A 20
0.4
0.2
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
1.4
1.6 0.8
Figure 11. On Voltages Motorola SmallSignal Transistors, FETs and Diodes Device Data
t, TIME (ns)
VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100
50 70
100
500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C hfe 200 @ IC = 1.0 mA
Figure 18. Output Admittance Motorola SmallSignal Transistors, FETs and Diodes Device Data
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
D = 0.5
0.2 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k
0.05
0.1
0.2
0.5
1.0
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO
4 0
2 0
Figure 19A.
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms
100 s 10 s 1.0 s
TC = 25C TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
dc
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
40
Figure 20.
2589
BANDWIDTH = 1.0 Hz RS
BANDWIDTH = 1.0 Hz
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
Figure 25. Wideband 2590 Motorola SmallSignal Transistors, FETs and Diodes Device Data
TJ = 125C 25C
200
55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100
0.6
0.4
40
100 A 50 A
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 55C to 25C 0.8 25C to 125C 1.6 25C to 125C
55C to 25C
2.4 0.1
50
100
Figure 29. On Voltages Motorola SmallSignal Transistors, FETs and Diodes Device Data
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPS6523 hfe 100 @ IC = 1.0 mA MPS6521 hfe 200 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPS6521 hfe 200 @ IC = 1.0 mA
Figure 36. Output Admittance Motorola SmallSignal Transistors, FETs and Diodes Device Data
D = 0.5
0.2
0.05
0.1
0.2
0.5
1.0
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25C
1.0 ms 100 s dc TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10 s
1.0 s
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
40
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICEO
4 0
2 0
Figure 39. Typical Collector Leakage Current Motorola SmallSignal Transistors, FETs and Diodes Device Data 2593
MOTOROLA
Audio Transistor
NPN Silicon
COLLECTOR 3 2 BASE
MPS6560
1 EMITTER
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 25 25 5.0 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/mW C/mW
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 4.0 Vdc, IC = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICES ICBO IEBO 25 25 5.0 100 100 100 Vdc Vdc Vdc nAdc nAdc nAdc
REV 1
2594
MPS6560
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(2)
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) Base Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) hFE 35 50 50 VCE(sat) VBE(on) 200 0.5 1.2 Vdc Vdc
2595
MOTOROLA
Amplifier Transistors
COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage MPS6601/6651 MPS6602/6652 Collector Base Voltage MPS6601/6651 MPS6602/6652 Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 25 30 4.0 1000 625 5.0 1.5 12 55 to +150 Vdc mAdc mW mW/C Watts mW/C C Symbol VCEO 25 40 Vdc Value Unit Vdc
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCE = 25 Vdc, IB = 0) (VCE = 30 Vdc, IB = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0) MPS6601/6651 MPS6602/6652 ICBO MPS6601/6651 MPS6602/6652 0.1 0.1 V(BR)CEO MPS6601/6651 MPS6602/6652 V(BR)CBO MPS6601/6651 MPS6602/6652 V(BR)EBO ICES 0.1 0.1 Adc 25 40 4.0 Vdc Adc 25 40 Vdc Vdc
1. RqJA is measured with the device soldered into a typical printed circuit board.
Preferred devices are Motorola recommended choices for future use and best overall value.
2596
ON CHARACTERISTICS
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) BaseEmitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) hFE 50 50 30 VCE(sat) VBE(on) 0.6 1.2 Vdc Vdc
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC = 40 Vdc, IC = 500 mAdc, IB1 = 50 mAdc mAdc, tp 300 ns Duty Cycle) td 25 30 250 50 ns ns ns ns
tr ts tf
TURNON TIME 1.0 V VCC +40 V 5.0 ms +10 V 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities * CS Vin 100 RB RL OUTPUT Vin
t 6.0 pF
t 6.0 pF
2597
100 70 50 VCE = 1.0 V TJ = 25C 10 100 IC, COLLECTOR CURRENT (mA) 1000
30
20 10
1000
300 200
300 200
30 10
1.0
TJ = 25C
0.6
0.6
0.4
0.4
0.2 0 1.0
VCE(SAT) @ IC/IB = 10
0.2
VCE(SAT) @ IC/IB = 10
10
100
1000
0 1.0
10
100
1000
Figure 6. On Voltages
Figure 7. On Voltages
2598
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
40
Cib
80 Cib 40 Cob Cob Cib 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 25 5.0
20 Cob 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 25 5.0
0 Cob Cib
Figure 8. Capacitance
Figure 9. Capacitance
6.0
8.0
8.0
6.0 IC = 100 mA
4.0
4.0
10 k 5k 3k 1k t, TIME (NS) 500 ts 200 100 50 20 10 10 20 50 100 200 tf tr td 500 1000 td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C
10 k 5k 3k 1k t, TIME (NS) 500 200 100 50 20 10 10 20 50 100 200 tf tr td 500 1000 ts td @ VBE(off) = 0.5 V VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C
2599
1.2
1.2
1.6
2.0
10
100
1000
10
100
1000
200 100 50
1.0 s
200 100 50
1.0 s
20 10 1.0
MPS6601 MPS6602
MPS6651 MPS6652 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 2.0 5.0 10 20 40
20 10
1.0 VCE , COLLECTOR VOLTAGE (VOLTS) VCE , COLLECTOR VOLTAGE (VOLTS) TJ = 25C 0.8
0.6 IC = 1000 mA 0.4 IC = 50 mA IC = 100 mA IC = 500 mA IC = 250 mA 1.0 IB, BASE CURRENT (mA) 10 100
0.6 IC = 1000 mA 0.4 IC = 50 mA IC = 100 mA IC = 500 mA IC = 250 mA 1.0 IB, BASE CURRENT (mA) 10 100
0.2
IC = 10 mA
0 0.01
0.1
2600
t, TIME (SECONDS)
2601
MOTOROLA
MPS6714 MPS6715
MAXIMUM RATINGS
Rating Collector Emitter Voltage MPS6714 MPS6715 Collector Base Voltage MPS6714 MPS6715 Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 40 50 5.0 1.0 1.0 8.0 2.5 20 55 to +150 Vdc Adc Watts mW/C Watts mW/C C Symbol VCEO 30 40 Vdc Value Unit Vdc
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPS6714 MPS6715 IEBO V(BR)CEO MPS6714 MPS6715 V(BR)CBO MPS6714 MPS6715 V(BR)EBO ICBO 0.1 0.1 0.1 Adc 40 50 5.0 Vdc Adc 30 40 Vdc Vdc
2602
MPS6714 MPS6715
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) Base Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE 60 50 VCE(sat) VBE(on) 250 0.5 1.2 Vdc Vdc
0.4
0.2 0
5.0
10 20
50 100
1.0
0.8
1.2
0.6
1.6
0.4
VCE(sat) @ IC/IB = 10
2.4
2.8 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA)
5.0 10 20
Figure 3. ON Voltages
2603
MPS6714 MPS6715
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 60 80 TJ = 25C
40
Cibo
Figure 6. Capacitance
200 TA = 25C 100 50 TC = 25C DUTY CYCLE 10% CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS6714 MPS6715 2.0 5.0 10 20 30 40
20 10 1.0
2604
MOTOROLA
MPS6717
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 80 5.0 500 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc mAdc Watts mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 80 80 5.0 0.1 10 Vdc Vdc Vdc Adc Adc
2605
MPS6717
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 250 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 250 mAdc, IB = 10 mAdc) Base Emitter On Voltage (IC = 250 mAdc, VCE = 1.0 Vdc) hFE 80 50 VCE(sat) VBE(on) 250 0.5 1.2 Vdc Vdc
400 TJ = 125C hFE , DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500
VCE = 1.0 V
0.6
0.4
0.4
0.2
0 0.05
0.1
0.2
10
20
50
0 0.5
1.0
2.0
200
500
Figure 3. On Voltages
2606
MPS6717
VB, TEMPERATURE COEFFICIENT (mV/C) 0.8 1.2 C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25C
20
2.0
2.4
10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
2.8 0.5
1.0
2.0
200
500
4.0 0.1
Figure 5. Capacitance
300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25C DUTY CYCLE 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 MPS6717 2.0 5.0 10 20 60 80 100 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) TA = 25C TC = 25C 1.0 s dc 1.0 ms 100 s
100 70 50
2607
MOTOROLA
MPS6724 MPS6725
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPS6724 40 50 12 1000 1.0 8.0 2.5 20 55 to +150 MPS6725 50 60 Unit Vdc Vdc Vdc mAdc Watts mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 1.0 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPS6724 MPS6725 IEBO V(BR)CES MPS6724 MPS6725 V(BR)CBO MPS6724 MPS6725 V(BR)EBO ICBO 100 100 100 nAdc 50 60 12 Vdc nAdc 40 50 Vdc Vdc
REV 1
2608
MPS6724 MPS6725
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 1000 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 1000 mAdc, IB = 2.0 mAdc) Base Emitter On Voltage (IC = 1000 mAdc, VCE = 5.0 Vdc) hFE 25,000 4,000 VCE(sat) VBE(on) 40,000 1.5 2.0 Vdc Vdc
2.0
5.0
10
20
30
200 k
25C
2.0
1.5
1.0
20
30
50 70 100
200 300
500
0.5 0.1
0.2
5.0
10
20
50
100 200
500 1000
2609
MPS6724 MPS6725
TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.6
1.0
25C TO 125C
2.0
0.8
0.6
6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
Figure 4. ON Voltages
4.0 h FE , SMALLSIGNAL CURRENT GAIN VCE = 5.0 V TJ = 25C f = 100 MHz C, CAPACITANCE (pF)
20 TJ = 25C 10 7.0 5.0 Cobo 3.0 2.0 1.0 2.0 5.0 10 20 50 100 200 500 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
2.0
Cibo
Figure 7. Capacitance
2610
MOTOROLA
MPS6726 MPS6727
MAXIMUM RATINGS
Rating Collector Emitter Voltage MPS6726 MPS6727 Collector Base Voltage MPS6726 MPS6727 Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 40 50 5.0 1.0 1.0 8.0 2.5 20 55 to +150 Vdc Adc Watts mW/C Watts mW/C C Symbol VCEO 30 40 Vdc Value Unit Vdc
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) MPS6726 MPS6727 IEBO V(BR)CEO MPS6726 MPS6727 V(BR)CBO MPS6726 MPS6727 V(BR)EBO ICBO 0.1 0.1 0.1 Adc 40 50 5.0 Vdc Adc 30 40 Vdc Vdc
2611
MPS6726 MPS6727
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) Base Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE 60 50 VCE(sat) VBE(on) 250 0.5 1.2 Vdc Vdc
200
0.8
h FE , CURRENT GAIN
0.6
0.4
0.2 TJ = 25C 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA)
20 10
20
50
100
200
500
1000
50 100
0.8
1.2
0.6
1.6
0.4
0.2
2.4
0 1.0 2.0
5.0
10
20
50 100 200
500 1000
Figure 3. ON Voltages
2612
MPS6726 MPS6727
f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 120 160 TJ = 25C
100 70 50
80 Cibo 40 Cobo
30 10
0 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Cobo Cibo 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 25 5.0
Figure 6. Capacitance
100 ms
200 100 50
DUTY CYCLE 10% MPS6726 MPS6727 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 30 40
20 10 1.0
2613
MOTOROLA
Amplifier Transistors
COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Symbol VCEO VCBO MPS8098 MPS8598 60 60 MPS8099 Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg 6.0 500 625 5.0 1.5 12 55 to +150 MPS8099 MPS8599 80 80 MPS8598 MPS8599 5.0 Vdc mAdc mW mW/C
1
Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPS8098, MPS8598 MPS8099, MPS8599 IEBO MPS8098, MPS8099 MPS8598, MPS8599 0.1 0.1 V(BR)CEO MPS8098, MPS8598 MPS8099, MPS8599 V(BR)CBO MPS8098, MPS8598 MPS8099, MPS8599 V(BR)EBO MPS8098, MPS8099 MPS8598, MPS8599 ICES ICBO 0.1 0.1 Adc 6.0 5.0 0.1 Adc Adc 60 80 Vdc 60 80 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2614
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) BaseEmitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) MPS8098, MPS8598 MPS8099, MPS8599 hFE 100 100 75 VCE(sat) VBE(on) 0.5 0.6 0.7 0.8 0.4 0.3 Vdc 300 Vdc
TURNON TIME 1.0 V VCC +40 V 5.0 ms +10 V Vin 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities * CS RB 100 RL OUTPUT Vin
100
t 6.0 pF
t 6.0 pF
2615
30 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA)
30 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
40 TJ = 25C 20 C, CAPACITANCE (pF) C, CAPACITANCE (pF) Cibo 10 8.0 6.0 4.0 Cobo 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
40 TTJ==25C J 25C 20 Cibo 10 8.0 6.0 Cobo 4.0 2.0 0.1 0.2
0.5 1.0
2.0
5.0
10 20
50 100
ts
ts
tf
tf
tr
tr 200
2616
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPS8598 DUTY CYCLE 10% MPS8599 2.0 3.0 5.0 7.0 10 20 30 50 70 100
1.0
10
20 30
50
100 200
30 0.2
0.5
1.0 2.0
5.0
10
20
50 100 200
1.0
1.0
0.6
0.6
0.4
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
2617
TJ = 25C IC = 200 mA
1.6
1.6
1.2
1.2
0.8
0.8
0.2
0.5
1.0
2.0
5.0
10
20
1.4
1.0
1.0
1.4
1.8
2.2
2.6 3.0 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA)
0.5
1.0
2.0
5.0
10
20
50
100
200
D = 0.5 0.2 0.1 0.05 SINGLE PULSE 0.02 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 1.0 k 2.0 k 5.0 k ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) 10 k 20 k 50 k 100 k
2618
MOTOROLA
Amplifier Transistors
COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSA05 MPSA55 60 60 4.0 500 625 5.0 1.5 12 55 to +150 MPSA06 MPSA56 80 80 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) MPSA05, MPSA55 MPSA06, MPSA56 V(BR)CEO MPSA05, MPSA55 MPSA06, MPSA56 V(BR)EBO ICES ICBO 0.1 0.1 60 80 4.0 0.1 Vdc Adc Adc Vdc
1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
2619
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) hFE 100 100 VCE(sat) VBE(on) 0.25 1.2 Vdc Vdc
50
TURNON TIME 1.0 V VCC +40 V 5.0 ms +10 V Vin 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities * CS RB 100 RL OUTPUT Vin
100
t 6.0 pF
t 6.0 pF
2620
100 70 50
30 20 2.0 3.0
30 2.0
3.0
5.0 7.0 10
20
30
50
70 100
200
5.0 7.0 10
20 30
50 70 100
200
10 8.0 6.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 Cobo 50 100
Cobo
50 100
1.0 k 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C 5.0 7.0 10
ts t, TIME (ns)
1.0 k 700 500 300 200 100 70 50 30 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C
ts
tf
10 5.0 7.0 10
2621
100 ms 1.0 ms
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSA55 MPSA56 20 30 50 70 100
TJ = 125C
VCE = 1.0 V
1.0
10
20 30
50
100
5.0 10
20
50
100 200
500
1.0
1.0
0.8
0.6
0.6
0.4
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 50 100 200 500
0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 50 100 200 500
2622
0.4 IC = 10 mA
0.4 IC = 10 mA
0.2 0
0.2
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
0.5
1.0
2.0
5.0
10
20
50
1.2
0.8
0.8
1.2
2.0
2.0
1.0
2.0
5.0
10
20
50
100
200
500
5.0
10
20
50
100 200
500
D = 0.5 0.2 ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) 5.0 k 10 k 20 k 50 k 100 k
0.2 0.1 0.05 0.1 0.07 0.05 0.03 0.02 0.01 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) 500 1.0 k 2.0 k SINGLE PULSE 0.02 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2
2623
MOTOROLA
Darlington Transistors
NPN Silicon
COLLECTOR 3 BASE 2
MPSA13 MPSA14 *
*Motorola Preferred Device
EMITTER 1
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 500 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, IB = 0) Collector Cutoff Current (VCB= 30 Vdc, IE = 0) Emitter Cutoff Current (VEB= 10 Vdc, IC = 0) V(BR)CES ICBO IEBO 30 100 100 Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2624
MPSA13 MPSA14
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MPSA13 MPSA14 MPSA13 MPSA14 VCE(sat) VBE(on) 5,000 10,000 10,000 20,000 1.5 2.0 Vdc Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)
RS
in en
IDEAL TRANSISTOR
2625
MPSA13 MPSA14
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
500 200 en, NOISE VOLTAGE (nV) 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 A 10 A
IC = 1.0 mA
200
100 70 50 30 20
BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 A 10 10 A 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 A
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2626
MPSA13 MPSA14
SMALLSIGNAL CHARACTERISTICS
20 TJ = 25C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALLSIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
2.0
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
Figure 6. Capacitance
200 k TJ = 125C hFE, DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
25C
1.5
1.0
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.0
25C TO 125C
2.0
0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
500
2627
MPSA13 MPSA14
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
SINGLE PULSE ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25C TC = 25C
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP
2628
MOTOROLA
Chopper Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPSA17
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VEBO IC PD PD TJ, Tstg Value 40 15 100 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CEO V(BR)EBO ICBO IEBO 40 15 100 100 Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MPSA16/D)
2629
MPSA17
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 200 600 0.25 Vdc
2630
MPSA17
500 TA = 25C VCE = 10 Vdc
h fe , DC CURRENT GAIN
300 200
100 70 50 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA)
1000 h fe , SMALL SIGNAL CURRENT GAIN 700 500 400 300 200 f = 1.0 kHz TA = 25C VCE = 5.0 Vdc
2.0 1.8 1.6 V, VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VCE (SAT) @ IC/IB = 10 2.0 3.0 5.0 10 20 30 50 100 VBE(on)
100 0.1
0.3
3.0
5.0 7.0 10
0 1.0
200
10 7.0
TA = 25C
4.0
2.0
1.0 0.5 1.0 2.0 0.4 0.7 1.0 2.0 4.0 7.0 10 20 40 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
2631
MOTOROLA
MPSA18
Motorola Preferred Device
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 45 45 6.5 200 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. RJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO 45 45 6.5 1.0 50 Vdc Vdc Vdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2632
MPSA18
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(2)
DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.5 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 400 500 500 500 VCE(sat) VBE(on) 0.08 0.6 0.2 0.3 0.7 Vdc 580 850 1100 1150 1500 Vdc
RS
in en
IDEAL TRANSISTOR
2633
MPSA18
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE
30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS 0 20 RS 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz
10 7.0 5.0
300 A 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA)
BANDWIDTH = 1.0 Hz IC = 10 mA
8.0
IC = 10 mA
12
8.0 100 A 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 A 10 A
2634
MPSA18
h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 55C
0.02
0.03
0.05
0.1
1.0
2.0
3.0
5.0
10
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) RVBE, BASEEMITTER TEMPERATURE COEFFICIENT (mV/ C)
0.4 0.8
0.6
1.2
0.4
1.6
TJ = 25C to 125C
0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
2.0 55C to 25C 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA)
20
50 100
Figure 9. On Voltages
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz)
8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25C
500
300 200
100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25C
1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
2635
MOTOROLA
Amplifier Transistor
NPN Silicon
MPSA20
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO IC PD PD TJ, Tstg Value 40 4.0 100 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)EBO ICBO 40 4.0 100 Vdc Vdc nAdc
2636
MPSA20
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(2) (IC = 5.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 40 400 0.25 Vdc
2637
MPSA20
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
20 IC = 1.0 mA en, NOISE VOLTAGE (nV) 300 A BANDWIDTH = 1.0 Hz RS = 0 In, NOISE CURRENT (pA) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 2.0 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 0.1 10 20 50 100 200 500 1 k f, FREQUENCY (Hz) 2k 5k 10 k 30 A 10 A IC = 1.0 mA 300 A 100 A BANDWIDTH = 1.0 Hz RS
100 A
30 A
BANDWIDTH = 1.0 Hz
500 k RS , SOURCE RESISTANCE (OHMS) 200 k 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 100 50 10 20 30 50 70 100
10 Hz to 15.7 kHz
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 7. Wideband 2638 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MPSA20
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C
200
25C
55C 100 80 60 40 0.004 0.006 0.01 MPSA20 VCE = 1.0 V VCE = 10 V 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
100
0.8 IC = 1.0 mA 10 mA 50 mA
0.6
100 mA
60 200 A 40 100 A 20
0.4
0.2
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 2.0 5.0 10 20 0.5 1.0 IC, COLLECTOR CURRENT (mA) 50 100 VBE(sat) @ IC/IB = 10
1.4
1.6 0.8
2639
MPSA20
TYPICAL DYNAMIC CHARACTERISTICS
300 200 100 70 50 30 20 10 7.0 5.0 3.0 1.0 2.0 td @ VBE(off) = 0.5 Vdc tr 1000 VCC = 3.0 V IC/IB = 10 TJ = 25C 700 500 300 200 t, TIME (ns) 100 70 50 30 20 10 1.0 tf ts
t, TIME (ns)
VCC = 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100
50 70
100
500 TJ = 25C f = 100 MHz 300 200 5.0 V C, CAPACITANCE (pF) VCE = 20 V
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 hoe, OUTPUT ADMITTANCE (m mhos) hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPSA20 hfe 200 @ IC = 1.0 mA VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPSA20 hfe 200 @ IC = 1.0 mA
2640
MPSA20
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19A DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.05
0.1
0.2
0.5
1.0
104 VCC = 30 Vdc IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICBO AND ICEX @ VBE(off) = 3.0 Vdc ICEO
4 0
2 0
Figure 19A.
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 1.0 ms
100 s 10 s 1.0 s
TC = 25C TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
dc
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 20 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 19. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
40
Figure 20.
2641
MOTOROLA
Darlington Transistor
NPN Silicon
COLLECTOR 3 BASE 2
MPSA27
EMITTER 1
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VEBO IC PD MPSA27 60 10 500 625 5.0 55 to +150 Unit Vdc Vdc mAdc mW mW/C C
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 200 Unit C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 40 V, IE = 0) (VCB = 50 V, IE = 0) Collector Cutoff Current (VCE = 30 V, VBE = 0) (VCE = 40 V, VBE = 0) (VCE = 50 V, VBE = 0) Emitter Cutoff Current (VEB = 10 Vdc) V(BR)CES V(BR)CBO ICBO 60 60 100 Vdc Vdc nAdc
ICES
500
nAdc
IEBO
100
nAdc
2642
MPSA27
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) Collector Emitter Saturation Voltage (IC = 100 mA, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mA, VCE = 5.0 Vdc) hFE 10,000 10,000 VCE(sat) VBE(on) 1.5 2.0 Vdc Vdc
2643
MPSA27
VCE = 5.0 V 120 h FE , DC CURRENT GAIN (k) V, VOLTAGE (VOLTS) 100 80 60 40 20 0 1.0 2.0 3.0 TA = 55C 10 20 30 100 200 500 1k TA = 25C TA = 125C 1.6 1.4 1.2 1.0 0.8 0.6 1.0 2.0 3.0 10 20 30 VCE(S) @ IC/IB = 1.0 k 100 200 500 1k TA = 25C VBE(S) @ IC/IB = 1.0 k VBE(ON) @ VCE = 5.0 V
Figure 2. ON Voltages
1.6 hfe , SMALLSIGNAL CURRENT GAIN 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k IC = 10 mA IC = 100 mA IC = 500 mA IC = 250 mA TA = 25C
2.0
1.0 0.8 0.6 0.4 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
1.0 ms 1.0 s
100 ms
200 TA = 25C 100 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 4.0 6.0 10 20 40 50 60 TC = 25C
20 10 1.0
2644
MOTOROLA
Darlington Transistors
NPN Silicon
COLLECTOR 3
MPSA28 MPSA29*
*Motorola Preferred Device
BASE 2
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSA28 80 80 12 500 625 5.0 1.5 12 55 to +150 MPSA29 100 100 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Collector Cutoff Current (VCE = 60 Vdc, VBE = 0) (VCE = 80 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) MPSA28 MPSA29 ICES MPSA28 MPSA29 IEBO 500 500 100 nAdc V(BR)CES MPSA28 MPSA29 V(BR)CBO MPSA28 MPSA29 V(BR)EBO ICBO 100 100 nAdc 80 100 12 Vdc nAdc 80 100 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2645
MPSA28 MPSA29
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.01 mAdc) (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 10,000 10,000 VCE(sat) VBE(on) 0.7 0.8 1.4 1.2 1.5 2.0 Vdc Vdc
2646
MPSA28 MPSA29
VCE = 5.0 V h FE , DC CURRENT GAIN (k) 200 100 50 20 10 5.0 2.0 1.0 1.0 2.0 5.0 10 20 50 100 200 500 1k TA = 25C TA = 55C V, VOLTAGE (VOLTS) TA = 125C 1.8 VBE(S) @ IC/IB = 1.0 k 1.6 TA = 25C 1.4 1.2 1.0 0.8 0.6 1.0 2.0 5.0 VCE(S) @ IC/IB = 1.0 k VBE(ON) @ VCE = 5.0 V
10
20
50
100
200
500
1k
Figure 2. ON Voltages
2.4 25C to 125C VCE , COLLECTOR VOLTAGE (VOLTS) TA = 25C 2.0 IC = 500 mA 1.6 IC = 250 mA
1.0
55C to 25C
3.0
1.2
IC = 10 mA
IC = 100 mA
4.0
0.8
0.4 0.2 1.0 2.0 10 20 100 200 1 k 1.5 k IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
200 100 50
20 10 1.0
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSA28 VALID FOR DUTY CYCLE 10% MPSA29
0.2 0.1 0.3 0.5 1.0 2.0 5.0 10 20 50 100 200 300
2.0
5.0
10
20
50
100
2647
MOTOROLA
MPSA42* MPSA43
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSA42 300 300 6.0 500 625 5.0 1.5 12 55 to +150 MPSA43 200 200 6.0 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/mW C/mW
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSA42 MPSA43 IEBO MPSA42 MPSA43 0.1 0.1 V(BR)CEO MPSA42 MPSA43 V(BR)CBO MPSA42 MPSA43 V(BR)EBO ICBO 0.1 0.1 Adc 300 200 6.0 Vdc Adc 300 200 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2648
MPSA42 MPSA43
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) MPSA42 MPSA43 VBE(sat) hFE 25 40 40 VCE(sat) 0.5 0.4 0.9 Vdc Vdc
2649
MPSA42 MPSA43
200 VCE = 10 Vdc hFE, DC CURRENT GAIN TJ = +125C
100
2.0
3.0
5.0
20
30
50
70
100
100 50 C, CAPACITANCE (pF) 20 10 5.0 Ccb 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) Ceb
30 20
100
200
10 1.0
2.0
50
70 100
Figure 2. Capacitances
1.4 IC, COLLECTOR CURRENT (mA) 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.5 CURRENT LIMIT THERMAL LIMIT (PULSE CURVES @ TC = 25C) SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 1.0 2.0 5.0 10 20 MPSA43 MPSA42 50 100 TA = 25C TC = 25C 100 ms 100 s 10 s 1.0 ms
200
500
Figure 4. On Voltages
2650
MOTOROLA
MPSA44
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 400 500 6.0 300 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 400 Vdc, IE = 0) Collector Cutoff Current (VCE = 400 Vdc, VBE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO 400 500 500 6.0 0.1 500 0.1 Vdc Vdc Vdc Vdc Adc nAdc Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
2651
MPSA44
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain(1) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage(1) (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE 40 50 45 40 VCE(sat) VBE(sat) 0.4 0.5 0.75 0.75 Vdc 200 Vdc
2652
MPSA44
160 140 hFE, DC CURRENT GAIN 120 100 80 60 40 55C 20 1.0 2.0 100 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 200 300 25C TA = 125C VCE = 10 V VCE , COLLECTOREMITTER VOLTAGE (VOLTS) 0.5
0.4
IC = 1.0 mA
IC = 10 mA
IC = 50 mA
0.1
0 10
30
100
10 k
50 k
1000 1.0 ms IC, COLLECTOR CURRENT (mA) 300 200 100 TA = 25C TC = 25C 100 s
1.0 s
0.6
VBE(on) @ VCE = 10 V
0.4
20 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID FOR DUTY CYCLE 10% 2.0 MPSA44 200 500
0.2
VCE(sat) @ IC/IB = 10
2.0 0 0.1 0.3 30 3.0 10 1.0 IC, COLLECTOR CURRENT (mA) 100 300 1.0 1.0
Figure 3. On Voltages
100 50 C, CAPACITANCE (pF) 20 10 5.0 2.0 1.0 0.3 0.5 TA = 25C f = 1.0 MHz 1.0 3.0 10 30 REVERSE BIAS (VOLTS) 100 300 Cob |h fe |, SMALLSIGNAL CURRENT GAIN Cib
10
0.2 0.3
30
100
Figure 5. Capacitance
2653
MPSA44
10 5.0 +9.7 V PW = 50 S DUTY CYCLE = 2.0% Vin
t, TIME ( s)
2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25C VBE(off) = 4.0 Vdc tr td 50 100 Vin RB 0 4.0 V VCC RL Vout
CS 4.0 pF*
10 5.0 ts t, TIME ( s) 2.0 1.0 0.5 VCC = 150 V IC/IB = 10 TA = 25C 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 tf 11.4 V +10.7 V
Vin
2654
MOTOROLA
Darlington Transistors
PNP Silicon
COLLECTOR 3
BASE 2
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSA62 20 20 10 500 625 5.0 1.5 12 55 to +150 MPSA63 MPSA64 30 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Cutoff Current (VCB= 15 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES MPSA62 MPSA63, MPSA64 ICBO MPSA62 MPSA63, MPSA64 IEBO 100 100 100 nAdc 20 30 nAdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2655
ON CHARACTERISTICS(1)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MPSA63 MPSA64 MPSA62 MPSA63 MPSA64 VCE(sat) MPSA62 MPSA63, MPSA64 VBE(on) MPSA62 MPSA63, MPSA64 1.4 2.0 1.0 1.5 Vdc 5,000 10,000 20,000 10,000 20,000 Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 0.01 mAdc) (IC = 100 mAdc, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc)
2656
55C
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
2.0 TA = 25C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.10.2 0.5 1 2 5 10 20 50 100200500 1K2K 5K10K IB, BASE CURRENT (A) IC = 10 mA 50 mA 100 mA 175 mA 300 mA
1.2 VBE(on) @ VCE = 5.0 V 0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 0.4
0 0.3 0.5
1.0
Figure 2. On Voltage
1000 IC, COLLECTOR CURRENT (mA) 1.0 ms 300 200 100 50 20 10 1.0 TA = 25C TC = 25C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE 10%) MPSA62 MPSA63 2.0 4.0 6.0 10 20 40 60 VCE, COLLECTOR VOLTAGE (VOLTS) 1.0 s 100 s
5.0
10
20
50
100 200
500
1K
2657
MOTOROLA
Amplifier Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPSA70
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VEBO IC PD PD TJ, Tstg Value 40 4.0 100 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)EBO ICBO 40 4.0 100 Vdc Vdc nAdc
2658
MPSA70
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 40 400 0.25 Vdc
2659
MPSA70
TYPICAL NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 3.0 2.0 1.0 mA 100 A 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 A 100 A 30 A 10 A IC = 1.0 mA
BANDWIDTH = 1.0 Hz RS
BANDWIDTH = 1.0 Hz
1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100
10 Hz to 15.7 kHz
0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A)
4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzmans Constant (1.38 x 1023 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms)
+ 20 log10
en2
) 4KTRS ) In 2RS2 1 2
Figure 5. Wideband 2660 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MPSA70
TYPICAL STATIC CHARACTERISTICS
400
TJ = 125C 25C
200
55C 100 80 60 40 0.003 0.005 MPSA70 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100
1.0 IC, COLLECTOR CURRENT (mA) TA = 25C MPSA70 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA
100
0.6
0.4
40
100 A 50 A
0.2
20
0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA)
TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100
1.4
1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 55C to 25C 0.8 25C to 125C 1.6 25C to 125C
55C to 25C
2.4 0.1
50
100
Figure 9. On Voltages
2661
MPSA70
TYPICAL DYNAMIC CHARACTERISTICS
500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 1.0 ts
t, TIME (ns)
tf
2.0
3.0
50 70
100
50 70 100
2.0
3.0
5.0 7.0
10
20
30
50
1.0 0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 MPSA70 hfe 200 @ IC = 1.0 mA hoe, OUTPUT ADMITTANCE (m mhos) VCE = 10 Vdc f = 1.0 kHz TA = 25C
200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C MPSA70 hfe 200 @ IC = 1.0 mA
2662
MPSA70
r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5
0.2
0.05
0.1
0.2
0.5
1.0
400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25C
1.0 ms 100 s dc TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10 s
1.0 s
The safe operating area curves indicate ICVCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.
40
104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 101 102 ICEO
4 0
2 0
2663
MOTOROLA
Darlington Transistors
PNP Silicon
COLLECTOR 3 BASE 2
MPSA75 MPSA77
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VEBO IC PD TJ, Tstg MPSA75 40 10 500 625 5.0 55 to +150 MPSA77 60 Unit Vdc Vdc Adc mW mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 200 Unit C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB= 30 V, IE = 0) (VCB = 50 V, IE = 0) Collector Cutoff Current (VCE = 30 V, VBE = 0) (VCE = 50 V, VBE = 0) Emitter Cutoff Current (VEB = 10 Vdc) MPSA75 MPSA77 MPSA75 MPSA77 MPSA75 MPSA77 ICES MPSA75 MPSA77 IEBO 500 500 100 nAdc V(BR)CES V(BR)CBO ICBO 100 100 nAdc 40 60 40 60 Vdc Vdc nAdc
ON CHARACTERISTICS
DC Current Gain (IC = 10 mA, VCE = 5.0 V) (IC = 100 mA, VCE = 5.0 V) Collector Emitter Saturation Voltage (IC = 100 mA, IB = 0.1 mAdc) Base Emitter On Voltage (IC = 100 mA, VCE = 5.0 Vdc) hFE 10,000 10,000 VCE(sat) VBE 1.5 2.0 Vdc Vdc
2664
MPSA75 MPSA77
200 hFE , DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3 10 V 25C VCE = 2.0 V 5.0 V TA = 125C
55C
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
2.0 TA = 25C 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.10.2 0.5 1 2 5 10 20 50 100200500 1K2K 5K10K IB, BASE CURRENT (A) IC = 10 mA 50 mA 100 mA 175 mA 300 mA
1.2 VBE(on) @ VCE = 5.0 V 0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 0.4
0 0.3 0.5
1.0
Figure 2. On Voltage
1000 IC, COLLECTOR CURRENT (mA) 1.0 ms 300 200 100 50 20 10 1.0 TA = 25C TC = 25C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (DUTY CYCLE 10%) MPSA75 MPSA77 2.0 4.0 6.0 10 20 40 60 VCE, COLLECTOR VOLTAGE (VOLTS) 1.0 s 100 s
5.0
10
20
50
100 200
500
1K
2665
MOTOROLA
MPSA92* MPSA93
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSA92 300 300 5.0 500 625 5.0 1.5 12 55 to +150 MPSA93 200 200 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) (VCB = 160 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSA92 MPSA93 IEBO V(BR)CEO MPSA92 MPSA93 V(BR)CBO MPSA92 MPSA93 V(BR)EBO ICBO 0.25 0.25 0.1 Adc 300 200 5.0 Vdc Adc 300 200 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2666
MPSA92 MPSA93
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE Both Types Both Types MPSA92 MPSA93 VCE(sat) MPSA92 MPSA93 VBE(sat) 0.5 0.4 0.9 Vdc 25 40 25 25 Vdc
2667
MPSA92 MPSA93
150 100 hFE, DC CURRENT GAIN +25C 70 50 55C TJ = +125C VCE = 10 Vdc
2.0 Ccb 1.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100200 500 1000 VR, REVERSE VOLTAGE (VOLTS)
0 1.0
2.0
50
100
Figure 2. Capacitances
100 s
200 100
MPSA93 50
1.5 WATT THERMAL LIMITATION @ TC = 25C 625 mW THERMAL LIMITATION @ TA = 25C
0.4
MPSA92
20 10
0.2
VCE(sat) @ IC/IB = 10 mA
0 1.0
2.0
50
100
5.0 3.0
BONDING WIRE LIMITATION SECOND BREAKDOWN LIMITATION TJ = 150C 100 200 300 5.0 10 20 30 50 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 4. On Voltages
2668
MOTOROLA
NPN Silicon
COLLECTOR 3 1 BASE 2 EMITTER
MPSH10 MPSH11
Motorola Preferred Devices
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD PD TJ, Tstg Value 25 30 3.0 350 2.8 1.0 8.0 55 to +150 Unit Vdc Vdc Vdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 100 100 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2669
MPSH10 MPSH11
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) Base Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) hFE VCE(sat) VBE(on) 60 0.5 0.95 Vdc Vdc
2670
MOTOROLA
CATV Transistor
NPN Silicon
COLLECTOR 3 1 BASE 2 EMITTER
MPSH17
Motorola Preferred Device
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD TJ, Tstg Value 15 20 3.0 350 2.81 55 to +150 Unit Vdc Vdc Vdc mW mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient (Printed Circuit Board Mounting) Symbol RqJA Max 357 Unit C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 15 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 15 20 3.0 100 Vdc Vdc Vdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2671
MPSH17
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) hFE VCE(sat) 25 250 0.5
FUNCTIONAL TEST
Amplifier Power Gain (IC = 5.0 mAdc, VCC = 12 Vdc, RS = 50 ohms, f = 200 MHz) Gpe 24 dB
2672
MOTOROLA
RF Amplifier Transistor
PNP Silicon
COLLECTOR 3 1 BASE 2 EMITTER
MPSH81
Motorola Preferred Device
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD TJ, Tstg Value 20 20 3.0 350 2.81 55 to +150 Unit Vdc Vdc Vdc mW mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Symbol RqJA Max 357 Unit C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 20 20 3.0 100 100 Vdc Vdc Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2673
MPSH81
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 mAdc, VCE = 10 Vdc) Collector Emitter Saturation Voltage (IC = 5.0 mAdc, IB = 0.5 mAdc) Base Emitter On Voltage (IC = 5.0 mAdc, VCE = 10 Vdc) hFE VCE(sat) VBE(on) 60 0.5 0.9 Vdc Vdc
2674
MPSH81
TYPICAL COMMONBASE yPARAMETERS
(VCB = 10 Vdc, TA = 25C, Frequency Points in MHz)
30 40 50 250 MHz b ib , (mmhos) 8.0 mA 70 80 90 12 mA 100 110 20 0 20 40 60 gib, (mmhos) 80 100 120 140 7.0 8.0 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 grb, (mmhos) 100 MHz brb , (mmhos) 60 3.0 4.0 IC = 12 mA 5.0 6.0 930 8.0 mA 4.0 mA 930 MHz 450 MHz IC = 4.0 mA 1.0 2.0 450 0 100 MHz 250
14 12 12 mA 8.0 mA 10 8.0 6.0 4.0 2.0 0 450 250 100 MHz IC = 4.0 mA 12 mA 8.0 mA
930
450 930
IC = 4.0 mA
20 120 100
80
60
40 gfb, (mmhos)
20
20
40
2.0
0.5
0.5
1.0
2.0
2.5
3.0
3.5
1000 900 800 700 600 500 400 300 200 100 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 IC, COLLECTOR CURRENT (mA) VCE = 10 V f = 100 MHz
2675
MOTOROLA
Amplifier Transistor
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPSL01
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 120 140 5.0 150 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0 ) Emitter Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 75 Vdc, IE = 0) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 120 140 5.0 1.0 100 Vdc Vdc Vdc Adc nAdc
2676
MPSL01
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(1) (IC = 10 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)(1) hFE VCE(sat) VBE(sat) 1.2 1.4 0.20 0.30 Vdc 50 300 Vdc
2677
MPSL01
500 300 200 h FE, DC CURRENT GAIN 100 55C 50 30 20 10 7.0 5.0 0.1 TJ = 125C 25C VCE = 1.0 V VCE = 5.0 V
0.2
0.3
0.5
0.7
1.0
10
20
30
50
70
100
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
101 VCE = 30 V IC, COLLECTOR CURRENT ( A) 100 101 102 103 104 105 0.4 TJ = 125C
IC = ICES
0.3
0.1 0.2 0 0.1 0.2 0.3 0.4 VBE, BASEEMITTER VOLTAGE (VOLTS)
0.5
0.6
2678
MPSL01
1.0 V, TEMPERATURE COEFFICIENT (mV/ C) TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 TJ = 55C to +135C
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.1 1.0 2.0 3.0 5.0 10 20 30 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 50 100
Figure 4. On Voltages
100 70 50 10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F C, CAPACITANCE (pF) VBB 8.8 V 100 RB 5.1 k Vin 100 1N914 VCC 30 V 3.0 k RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo
TJ = 25C
Cobo
0.3
2.0
3.0
5.0 7.0
10
20
Figure 7. Capacitances
1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V tr @ VCC = 30 V IC/IB = 10 TJ = 25C tr @ VCC = 120 V t, TIME (ns)
5000 3000 2000 tf @ VCC = 30 V 1000 500 300 200 100 50 0.2 0.3 0.5 ts @ VCC = 120 V tf @ VCC = 120 V IC/IB = 10 TJ = 25C
1.0
50
100
200
100
200
2679
MOTOROLA
Amplifier Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPSL51
1 2 3
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 100 100 4.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 100 100 4.0 1.0 100 Vdc Vdc Vdc Adc nAdc
2680
MPSL51
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain(1) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) hFE VCE(sat) VBE(sat) 1.2 1.2 0.25 0.30 Vdc 40 250 Vdc
2681
MPSL51
200 150 TJ = 125C h FE, CURRENT GAIN 100 70 50 55C 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 VCE = 1.0 V VCE = 5.0 V 25C
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA
103 IC, COLLECTOR CURRENT ( A) 102 101 TJ = 125C 100 75C 101 102 103 0.3 REVERSE 25C FORWARD VCE = 30 V IC = ICES
0.2
0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASEEMITTER VOLTAGE (VOLTS)
0.6
0.7
2682
MPSL51
0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 V, TEMPERATURE COEFFICIENT (mV/ C) 1.0 TJ = 25C 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 0.1 VB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VC for VCE(sat) TJ = 55C to 135C
Figure 4. On Voltages
10.2 V Vin 10 s INPUT PULSE tr, tf 10 ns DUTY CYCLE = 1.0% 0.25 F 100 RB 5.1 k Vin 100 1N914 3.0 k RC Vout
C, CAPACITANCE (pF)
VBB + 8.8 V
VCC 30 V
TJ = 25C
Cobo
0.3
2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS)
10
20
Figure 7. Capacitances
2000 IC/IB = 10 TJ = 25C tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V
2683
MOTOROLA
MPSW01 MPSW01A *
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage MPSW01 MPSW01A Collector Base Voltage MPSW01 MPSW01A Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg Symbol VCEO 30 40 VCBO 40 50 5.0 1000 1.0 8.0 2.5 20 55 to +150 Vdc mAdc Watts mW/C Watts mW/C C Vdc Value Unit Vdc
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW01 MPSW01A IEBO V(BR)CEO MPSW01 MPSW01A V(BR)CBO MPSW01 MPSW01A V(BR)EBO ICBO 0.1 0.1 0.1 Adc 40 50 5.0 Vdc Adc 30 40 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2684
MPSW01 MPSW01A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) BaseEmitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE 55 60 50 VCE(sat) VBE(on) 0.5 1.2 Vdc Vdc
0.4
0.2 0
5.0
10 20
50 100
1.0
0.8
1.2
0.6
1.6
0.4
VCE(sat) @ IC/IB = 10
2.4
2.8 1.0 2.0 5.0 10 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA)
5.0 10 20
Figure 3. ON Voltages
2685
MPSW01 MPSW01A
f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 60 80 TJ = 25C
40
Cibo
Figure 6. Capacitance
200 TA = 25C 100 50 TC = 25C DUTY CYCLE 10% CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW01 MPSW01A 2.0 5.0 10 20 30 40
20 10 1.0
2686
MOTOROLA
MPSW05 MPSW06*
*Motorola Preferred Device
1 2
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSW05 60 60 4.0 500 1.0 8.0 2.5 20 55 to +150 MPSW06 80 80 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW05 MPSW06 ICBO MPSW05 MPSW06 IEBO 0.1 0.1 0.1 Adc V(BR)CEO MPSW05 MPSW06 V(BR)EBO ICES 0.5 0.5 Adc 60 80 4.0 Vdc Adc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2687
MPSW05 MPSW06
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 250 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 250 mAdc, IB = 10 mAdc) BaseEmitter Saturation Voltage (IC = 250 mAdc, VCE = 5.0 Vdc) hFE 80 60 VCE(sat) VBE(sat) 0.4 1.2 Vdc Vdc
400 TJ = 125C hFE , DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500
VCE = 1.0 V
0.6
0.4
0.4
0.2
0 0.05
0.1
0.2
10
20
50
0 0.5
1.0
2.0
200
500
Figure 3. On Voltages
2688
MPSW05 MPSW06
VB, TEMPERATURE COEFFICIENT (mV/C) 0.8 1.2 C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25C
20
2.0
2.4
10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100
2.8 0.5
1.0
2.0
200
500
4.0 0.1
Figure 5. Capacitance
300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25C DUTY CYCLE 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25C TC = 25C 1.0 s 1.0 ms 100 s
100 70 50
dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW05 MPSW06 10 20 60 80 100 2.0 5.0 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2689
MOTOROLA
MPSW10
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 300 300 6.0 500 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 6.0 0.2 0.1 Vdc Vdc Vdc Adc Adc
2690
MPSW10
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 30 mAdc, IB = 3.0 mAdc) BaseEmitter On Voltage (IC = 30 mAdc, VCE = 10 Vdc) hFE 25 40 40 VCE(sat) VBE(on) 0.75 0.85 Vdc Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Ccb 45 3.0 MHz pF
100 70 50
25C
55C
30 20 1.0
2.0
50
70 100
0.2
0.5
20 30
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 5.0 0.2 0 1.0 2.0 VCE(sat) @ IC/IB = 10 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 55C to 125C RVB for VBE 55C to 25C RVC for VCE(sat) IC IB
+ 10
25C to 125C
Figure 3. On Voltages
2691
MPSW10
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz TJ = 25C Ceb
30 20
Ccb
0.5
100
200
10 1.0
2.0 3.0
50
70 100
Figure 5. Capacitance
1k IC, COLLECTOR CURRENT (mA) 500 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 ms 1.0 s 100 50 TA = 25C DUTY CYCLE 10% 10 20 50 100 200 300 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 100 s
200
20 10
2692
MOTOROLA
MPSW13 MPSW14
EMITTER 1
1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 1.0 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc Adc Watts mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES ICBO IEBO 30 100 100 Vdc nAdc nAdc
REV 1
2693
MPSW13 MPSW14
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MPSW13 MPSW14 MPSW13 MPSW14 VCE(sat) VBE(on) 5,000 10,000 10,000 20,000 1.5 2.0 Vdc Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| ftest. fT 125 MHz
2.0
5.0
10
20
30
200 k
25C
2.0
1.5
1.0
20
30
50 70 100
200 300
500
0.5 0.1
0.2
5.0
10
20
50
100 200
500 1000
2694
MPSW13 MPSW14
TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.6
1.0
25C TO 125C
2.0
0.8
0.6
6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)
Figure 4. ON Voltages
4.0 h FE , SMALLSIGNAL CURRENT GAIN VCE = 5.0 V TJ = 25C f = 100 MHz C, CAPACITANCE (pF)
20 TJ = 25C 10 7.0 5.0 Cobo 3.0 2.0 1.0 2.0 5.0 10 20 50 100 200 500 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)
2.0
Cibo
Figure 7. Capacitance
2695
MOTOROLA
MPSW42
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 300 300 6.0 500 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 6.0 0.1 0.1 Vdc Vdc Vdc Adc Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
2696
MPSW42
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 40 VCE(sat) VBE(sat) 0.5 0.9 Vdc Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) Collector Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) fT Ccb 50 3.0 MHz pF
100 70 50
25C
55C
30 20 1.0
2.0
50
70 100
0.2
0.5
20 30
1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 5.0 0.2 0 1.0 2.0 VCE(sat) @ IC/IB = 10 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V TJ = 25C
2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 55C to 125C RVB for VBE 55C to 25C RVC for VCE(sat) IC IB
+ 10
25C to 125C
Figure 3. On Voltages
2697
MPSW42
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 f T, CURRENTGAIN BANDWIDTH PRODUCT (MHz) 100 70 50 TJ = 25C VCE = 20 V f = 20 MHz TJ = 25C Ceb
30 20
Ccb
0.5
100
200
10 1.0
2.0 3.0
50
70 100
Figure 5. Capacitance
1k IC, COLLECTOR CURRENT (mA) 500 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1.0 ms 1.0 s 100 50 TA = 25C DUTY CYCLE 10% 10 20 50 100 200 300 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 100 s
200
20 10
2698
MOTOROLA
MPSW45 MPSW45A*
*Motorola Preferred Device
EMITTER 1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSW45 40 50 12 1.0 1.0 8.0 2.5 20 55 to +150 MPSW45A 50 60 12 1.0 Unit Vdc Vdc Vdc Adc Watts mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) MPSW45 MPSW45A IEBO V(BR)CES MPSW45 MPSW45A V(BR)CBO MPSW45 MPSW45A V(BR)EBO ICBO 100 100 100 nAdc 50 60 12 Vdc nAdc 40 50 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2699
MPSW45 MPSW45A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 200 mAdc, VCE = 5.0 Vdc) (IC = 500 mAdc, VCE = 5.0 Vdc) (IC = 1.0 Adc, VCE = 5.0 Vdc) Collector Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) Base Emitter Saturation Voltage (IC = 1.0 Adc, IB = 2.0 mAdc) Base Emitter On Voltage (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 25,000 15,000 4,000 VCE(sat) VBE(sat) VBE(on) 150,000 1.5 2.0 2.0 Vdc Vdc Vdc
RS
in en
IDEAL TRANSISTOR
2700
MPSW45 MPSW45A
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
500 200 en, NOISE VOLTAGE (nV) 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k BANDWIDTH = 1.0 Hz RS 0 i n, NOISE CURRENT (pA) 2.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 50 k 100 k 100 A 10 A
IC = 1.0 mA
200
100 70 50 30 20
BANDWIDTH = 10 Hz TO 15.7 kHz IC = 10 A 10 10 A 8.0 6.0 4.0 2.0 0 1.0 IC = 1.0 mA 100 A
100 A
1.0 mA 10
1.0
2.0
5.0
500
100 0
2.0
5.0
500
100 0
2701
MPSW45 MPSW45A
SMALLSIGNAL CHARACTERISTICS
20 TJ = 25C 10 C, CAPACITANCE (pF) 7.0 5.0 Cibo Cobo |h fe |, SMALLSIGNAL CURRENT GAIN 4.0 VCE = 5.0 V f = 100 MHz TJ = 25C
2.0
3.0
2.0 0.04
0.1
20
40
0.2 0.5
1.0
2.0
500
Figure 6. Capacitance
200 k TJ = 125C hFE, DC CURRENT GAIN 100 k 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
25C
1.5
1.0
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
1.6 TJ = 25C 1.4 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0
1.0
25C TO 125C
2.0
0.8 VCE(sat) @ IC/IB = 1000 0.6 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
500
2702
MPSW45 MPSW45A
1.0 0.7 0.5 0.3 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.05 SINGLE PULSE D = 0.5 0.2
SINGLE PULSE ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t) ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)
0.2
0.5
1.0
2.0
5.0
10
20 50 t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10 k
1.0 k 700 500 300 200 100 70 50 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TA = 25C TC = 25C
1.0 ms 100 s
FIGURE A tP
1.0 s
PP
PP
t1 1/f DUTY CYCLE 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) 40 1 + t1 f + ttP
2703
MOTOROLA
MPSW51 MPSW51A*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range MPSW51 MPSW51A MPSW51 MPSW51A Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 30 40 40 50 5.0 1000 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc CASE 2905, STYLE 1 TO92 (TO226AE) Vdc mAdc Watts mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW51 MPSW51A IEBO V(BR)CEO MPSW51 MPSW51A V(BR)CBO MPSW51 MPSW51A V(BR)EBO ICBO 0.1 0.1 0.1 Adc 40 50 5.0 Vdc Adc 30 40 Vdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2704
MPSW51 MPSW51A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 1000 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 1000 mAdc, IB = 100 mAdc) Base Emitter On Voltage (IC = 1000 mAdc, VCE = 1.0 Vdc) hFE 55 60 50 VCE(sat) VBE(on) 0.7 1.2 Vdc Vdc
0.8
h FE , CURRENT GAIN
0.6
0.4
0.2 TJ = 25C 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA)
20 10
20
50
100
200
500
1000
50 100
0.8
1.2
0.6
1.6
0.4
0.2
2.4
0 1.0 2.0
5.0
10
20
50 100 200
500 1000
Figure 3. ON Voltages
2705
MPSW51 MPSW51A
f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 300 200 C, CAPACITANCE (pF) 120 160 TJ = 25C
100 70 50
80 Cibo 40 Cobo
30 10
0 20 50 100 200 500 1000 IC, COLLECTOR CURRENT (mA) Cobo Cibo 5.0 1.0 10 15 20 2.0 3.0 4.0 VR, REVERSE VOLTAGE (VOLTS) 25 5.0
Figure 6. Capacitance
100 ms
200 100 50
DUTY CYCLE 10% MPSW51 MPSW51A CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 30 40
20 10 1.0
2706
MOTOROLA
MPSW55 MPSW56*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg MPSW55 60 60 4.0 500 1.0 8.0 2.5 20 55 to +150 MPSW56 80 80 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Emitter Base Breakdown Voltage (IE = 100 mAdc, IC = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width MPSW55 MPSW56 ICBO MPSW55 MPSW56 IEBO 0.1 0.1 0.1 Adc V(BR)CEO MPSW55 MPSW56 V(BR)EBO ICES 0.5 0.5 Adc 60 80 4.0 Vdc Adc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2707
MPSW55 MPSW56
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 250 mAdc, VCE = 1.0 Vdc) Collector Emitter Saturation Voltage (IC = 250 mAdc, IB = 10 mAdc) BaseEmitter On Voltage (IC = 250 mAdc, VCE = 5.0 Vdc) hFE 100 50 VCE(sat) VBE(on) 0.5 1.2 Vdc Vdc
400 TJ = 125C hFE, DC CURRENT GAIN 200 25C 55C 100 80 60 40 0.5 0.7
VCE = 1.0 V
1.0
2.0
3.0
5.0
50
70
100
200
300
500
0.6 IC = 10 mA 0.4
50 mA
100 mA
250 mA
500 mA
0.4
0.2
0 0.05 0.1
0.2
10
20
50
0 0.5 1.0
2.0
500
Figure 3. On Voltages
2708
MPSW55 MPSW56
VB, TEMPERATURE COEFFICIENT (mV/C) 0.8 1.2 C, CAPACITANCE (pF) 100 70 50 30 20 Cibo TJ = 25C
2.0
2.4
10 7.0
Cobo
2.8 0.5
1.0
2.0
500
5.0 0.1
0.2
50 100
Figure 5. Capacitance
200 IC, COLLECTOR CURRENT (mA) VCE = 2.0 V TJ = 25C 100 70 50 DUTY CYCLE 10% 2 k 1 k 500 200 100 50 20 20 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25C TC = 25C dc dc 1.0 s 1.0 ms 100 s
30
CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW55 MPSW56 2.0 5.0 10 20 60 80 100 VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
2709
MOTOROLA
MPSW63 MPSW64 *
*Motorola Preferred Device
BASE 2
EMITTER 1
1
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSW63 MPSW64 30 30 10 500 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CES ICBO IEBO 30 100 100 Vdc nAdc nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
2710
MPSW63 MPSW64
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) hFE MPSW63 MPSW64 MPSW63 MPSW64 VCE(sat) VBE(on) 5,000 10,000 10,000 20,000 1.5 2.0 Vdc Vdc
(IC = 100 mAdc, VCE = 5.0 Vdc) CollectorEmitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) BaseEmitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc)
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2. fT = |hfe| ftest. fT 125 MHz
200 h FE, DC CURRENT GAIN (X1.0 k) TJ = 125C 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3
10 V
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
1.2
0.8
3.0 5.0
10
30 50 100
300
Figure 2. ON Voltage
2711
MPSW63 MPSW64
R qV , TEMPERATURE COEFFICIENT (mV/ C) +5.0 +4.0 +3.0 +2.0 +1.0 0 1.0 2.0 3.0 4.0 RqVB FOR VBE 5.0 0.3 0.5 1.0 2.0 *RqVC FOR VCE(sat) 50C TO +25C +25C TO +125C 5.0 10 20 50 100 300 +25C TO +125C 50C TO +25C *APPLIES FOR IC/IB hFE/100 f T , CURRENTGAIN BANDWIDTH PRODUCT (MHz) 600 400 300 200 TJ = 25C VCE = 20 V
2 k
Cibo
1 k
100 ms
500 1.0 s TA = 25C 200 DUTY CYCLE 10% 100 1.5 2.0 TC = 25C
0.5
1.0
2.0
5.0
10
20 30
5.0
10
20
30
Figure 6. Capacitance
2712
MOTOROLA
MPSW92
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 300 300 5.0 500 1.0 8.0 2.5 20 55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/C Watts mW/C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 100 Adc, IC = 0) Collector Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 5.0 0.25 0.1 Vdc Vdc Vdc Adc Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
2713
MPSW92
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) CollectorEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) BaseEmitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 25 VCE(sat) VBE(sat) 0.5 0.9 Vdc Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) CollectorBase Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width fT Ccb 50 6.0 MHz pF
100 70 50
25C 55C
30 20 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
2714
MPSW92
R qV, TEMPERATURE COEFFICIENTS (mV/ C) 1.4 1.2 TJ = 25C V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 1.0 VCE(sat) @ IC/IB = 10 2.0 3.0 5.0 7.0 10 5.0 VCE(sat) @ IC/IB = 5.0 20 30 50 70 100 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 10 V 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 RqVB FOR VBE 55C TO 125C RqVC FOR VCE(sat) 55C TO 25C IC/IB = 10 25C TO 125C
Figure 3. ON Voltages
100 70 50 C, CAPACITANCE (pF) 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.5 1.0 2.0
Ceb
TJ = 25C
30 20
Ccb
5.0 10
20
50 100 200
10 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
Figure 5. Capacitance
1 k IC , COLLECTOR CURRENT (mA) 500 100 ms 200 1.0 s 100 1.0 ms 50 TA = 25C TC = 25C MPSW92 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
20 10 10
2715
MOTOROLA
MSA1022-CT1
Motorola Preferred Device
COLLECTOR 3
3 2 1
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc CASE 318D03, STYLE 1 SC59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 ~ +150 Unit mW C C
DEVICE MARKING
Marking Symbol
ECX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MSA1022BT1/D)
2716
MOTOROLA
MSB709-RT1
Motorola Preferred Device
COLLECTOR 3
3 2 1
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc mAdc CASE 318D03, STYLE 1 SC59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 ~ +150 Unit mW C C
DEVICE MARKING
Marking Symbol
ARX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
2717
MOTOROLA
MSB710-RT1
Motorola Preferred Device
COLLECTOR 3
2 BASE
1 EMITTER
2 1
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 ~ +150 Unit mW C C
DEVICE MARKING
CRX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
Preferred devices are Motorola recommended choices for future use and best overall value.
replaces MSB710QT1/D
2718
MSB710-RT1
ELECTRICAL CHARACTERISTICS (TA = 25C)
Characteristic CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) CollectorBase Cutoff Current (VCB = 20 Vdc, IE = 0) DC Current Gain(1) (VCE = 10 Vdc, IC = 150 mAdc) (VCE = 10 Vdc, IC = 500 mAdc) CollectorEmitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc) CollectorBase Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, D.C. 2%. Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO Min 50 60 7.0 Max 0.1 Unit Vdc Vdc Vdc Adc hFE1 hFE2 VCE(sat) VBE(sat) Cob 120 40 240 0.6 1.5 15 Vdc Vdc pF
2719
MOTOROLA
MSB1218A-RT1
Motorola Preferred Devices
1 2
COLLECTOR 3
DEVICE MARKING
MSB1218ART1 = BR 1 BASE Symbol PD TJ Tstg Max 150 150 55 ~ + 150 Unit mW C C 2 EMITTER
THERMAL CHARACTERISTICS
Rating Power Dissipation(1) Junction Temperature Storage Temperature Range
ELECTRICAL CHARACTERISTICS
Characteristic CollectorEmitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 10 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IE = 0) CollectorBase Cutoff Current (VCB = 20 Vdc, IE = 0) CollectorEmitter Cutoff Current (VCE = 10 Vdc, IB = 0) DC Current Gain(2) (VCE = 10 Vdc, IC = 2.0 mAdc) CollectorEmitter Saturation Voltage(2) (IC = 100 mAdc, IB = 10 mAdc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 VCE(sat) Min 45 45 7.0 210 Max 0.1 100 340 0.5 Unit Vdc Vdc Vdc A A Vdc
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, D.C. 2%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2720
MSB1218A-RT1
250 PD , POWER DISSIPATION (MILLIWATTS) TA = 25C IC, COLLECTOR CURRENT (mA) 200 120
150
90
60
50
30 0
0 50
50
100
150
Figure 2. IC VCE
1000 VCE = 10 V TA = 75C DC CURRENT GAIN TA = 25C 100 TA = 25C VCE , COLLECTOR-EMITTER VOLTAGE (V)
2 TA = 25C 1.5
0.5
10 0.1
10
100
0 0.01
0.1
10
100
900 800 COLLECTOR VOLTAGE (mV) 700 600 500 400 300 200 100 0 0.2 0.5 1 5 10 20 40 60 80 100 150 200 TA = 25C VCE = 5 V
Figure 5. On Voltage
2721
MSB1218A-RT1
13 Cib, INPUT CAPACITANCE (pF) 12 Cob, CAPACITANCE (pF) 11 10 9 8 7 6 0 1 2 VEB (V) 3 4 14 12 10 8 6 4 2 0 0 10 20 VCB (V) 30 40
Figure 6. Capacitance
Figure 7. Capacitance
2722
MOTOROLA
COLLECTOR 3
MSC2295-BT1 MSC2295-CT1
Motorola Preferred Devices
2 BASE
2 1
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 ~ +150 Unit mW C C
VBX
MSC2295BT1
VCX
MSC2295CT1
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
Preferred devices are Motorola recommended choices for future use and best overall value.
2723
MOTOROLA
MSC3130T1
Motorola Preferred Device
COLLECTOR 3
3 2 1
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc CASE 318D03, STYLE 1 SC59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 ~ +150 Unit mW C C
DEVICE MARKING
Marking Symbol
1SX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
Preferred devices are Motorola recommended choices for future use and best overall value.
2724
MOTOROLA
COLLECTOR 3
MSD601-RT1* MSD601-ST1
*Motorola Preferred Device
2 BASE
3 2 1
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 ~ +150 Unit mW C C
YRX
MSD601RT1
YSX
MSD601ST1
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2725
MOTOROLA
MSD602-RT1
Motorola Preferred Device
COLLECTOR 3
3 2
2 BASE
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 ~ +150 Unit mW C C
DEVICE MARKING
Marking Symbol
WRX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2726
MOTOROLA
MSD1328-RT1
Motorola Preferred Device
COLLECTOR 3
3 2 1
2 BASE
1 EMITTER Unit Vdc Vdc Vdc mAdc mAdc CASE 318D03, STYLE 1 SC59
THERMAL CHARACTERISTICS
Characteristic Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 ~ +150 Unit mW C C
DEVICE MARKING
Marking Symbol
1DRX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
Preferred devices are Motorola recommended choices for future use and best overall value.
2727
MOTOROLA
MSD1819A-RT1
Motorola Preferred Devices
DEVICE MARKING
MSD1819A-RT1 = ZR
COLLECTOR 3
THERMAL CHARACTERISTICS
Rating Power Dissipation(1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 55 ~ + 150 Unit mW C C 1 BASE 2 EMITTER
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IE = 0) Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0) DC Current Gain(2) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) Collector-Emitter Saturation Voltage(2) (IC = 100 mAdc, IB = 10 mAdc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICEO hFE1 hFE2 VCE(sat) Min 50 60 7.0 210 90 Max 0.1 100 340 0.5 Vdc Unit Vdc Vdc Vdc A A
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 s, D.C. 2%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2728
MSD1819A-RT1
PD , POWER DISSIPATION (MILLIWATTS) 250 IC, COLLECTOR CURRENT (mA) 60 TA = 25C 200 50 40 30 20 10 0 160 A 140 A 120 A 100 A 80 A 60 A 40 A IB = 20 A 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) 8
150
50
0 50
150
Figure 2. IC VCE
1000 TA = 25C TA = 75C DC CURRENT GAIN VCE = 10 V VCE , COLLECTOR-EMITTER VOLTAGE (V)
2 TA = 25C 1.5
TA = 25C 100
0.5
10 0.1
0 0.01
0.1
10
100
900 800 COLLECTOR VOLTAGE (mV) 700 600 500 400 300 200 100 0 0.2 0.5 1 5 10 20 40 60 80 100 150 200 TA = 25C VCE = 5 V
Figure 5. On Voltage
2729
MSD1819A-RT1
20 7 6 Cob, CAPACITANCE (pF) 5 4 3 2 1
18
16
14
12
10
2 VEB (V)
10
20 VCB (V)
30
40
Figure 6. Capacitance
Figure 7. Capacitance
2730
MOTOROLA
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC59 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count
R1 PIN3 COLLECTOR (OUTPUT)
MUN2111T1 SERIES
Motorola Preferred Devices
The SC59 package can be soldered using wave or reflow. PIN2 The modified gullwinged leads absorb thermal stress duringBASE R2 soldering eliminating the possibility of damage to the die. (INPUT) Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel.
PIN1 EMITTER (GROUND)
3 2 1
THERMAL CHARACTERISTICS
Thermal Resistance JunctiontoAmbient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RJA TJ, Tstg TL 625 65 to +150 260 10 C/W C C Sec
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 5
2731
MUN2111T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (VCB = 50 V, IE = 0) CollectorEmitter Cutoff Current (VCE = 50 V, IB = 0) EmitterBase Cutoff Current (VEB = 6.0 V, IC = 0) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 nAdc nAdc mAdc
CollectorBase Breakdown Voltage (IC = 10 A, IE = 0) CollectorEmitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS(3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2130T1 MUN2131T1 MUN2116T1 MUN2132T1 MUN2134T1 VOL MUN2111T1 MUN2112T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2113T1 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 Vdc 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Vdc
VCE(sat)
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2732
MUN2111T1 SERIES
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25C unless otherwise noted)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN2130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN2115T1 MUN2116T1 MUN2131T1 MUN2132T1 Input Resistor MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2111T1/MUN2112T1/MUN2113T1 MUN2114T1 MUN2115T1/MUN2116T1 MUN2130T1/MUN2131T1/MUN2132T1 MUN2133T1 MUN2134T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055 0.38
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 1.0 0.1 0.47
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185 0.56
Resistor Ratio
R1/R2
200
150
50
0 50
150
2733
MUN2111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN2111T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 75C 0.1 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
25C
10
100
4 f = 1 MHz lE = 0 V TA = 25C
25C TA = 25C
0.1
0.01 0.001 0 1 2
50
10
0.1
10
40
50
2734
MUN2111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN2112T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 TA = 25C 25C 1 75C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
0.1
0.01
4 f = 1 MHz lE = 0 V TA = 25C
0.1
50
0.001
TA = 25C 10 75C
25C
0.1
10
20
30
40
50
2735
MUN2111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN2113T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10
1000
25C
0.01
40
10
100
1 f = 1 MHz lE = 0 V TA = 25C
100
TA = 75C
25C 25C
10 1
0.6
0.4
0.1
0.2
50
0.001
0.1
10
50
2736
MUN2111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN2114T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 25C VCE = 10 V 25C TA = 75C
0.01
0.001
80
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C
10
+12 V
LOAD 0.1
10
50
2737
MOTOROLA
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC59 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC59 package can be soldered using wave or reflow. The modified gullwinged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel.
R1 PIN2 R2 BASE (INPUT) PIN1 EMITTER (GROUND) PIN3 COLLECTOR (OUTPUT)
MUN2211T1 SERIES
Motorola Preferred Devices
3 2 1
THERMAL CHARACTERISTICS
Thermal Resistance JunctiontoAmbient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RJA TJ, Tstg TL 625 65 to +150 260 10 C/W C C Sec
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
2738
MUN2211T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (VCB = 50 V, IE = 0) CollectorEmitter Cutoff Current (VCE = 50 V, IB = 0) EmitterBase Cutoff Current (VEB = 6.0 V, IC = 0) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 nAdc nAdc mAdc
CollectorBase Breakdown Voltage (IC = 10 A, IE = 0) CollectorEmitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS(3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 350 350 5.0 15 30 200 150 0.25 Vdc
CollectorEmitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN2230T1/MUN2231T1 (IC = 10 mA, IB = 1 mA) MUN2215T1/MUN2216T1/ MUN2232T1/MUN2233T1/MUN2234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN2211T1 MUN2212T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2213T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
Vdc
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2739
MUN2211T1 SERIES
ELECTRICAL CHARACTERISTICS (Continued) (TA = 25C unless otherwise noted)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN2230T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN2215T1 MUN2216T1 MUN2233T1 Input Resistor MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2211T1/MUN2212T1/MUN2213T1 MUN2214T1 MUN2215T1/MUN2216T1 MUN2230T1/MUN2231T1/MUN2232T1 MUN2233T1 MUN2234T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055 0.38
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 1.0 0.1 0.47
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185 0.56
Resistor Ratio
R1/R2
200
150
0 50
150
2740
MUN2211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN2211T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 25C 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
0.1
0.01
0.001
80
10
100
4 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.1
50
0.001
0.1
10
40
50
2741
MUN2211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN2212T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
0.01
10
100
4 f = 1 MHz IE = 0 V TA = 25C
75C
25C TA = 25C
10
0.1
0.01 VO = 5 V
10
20
30
40
50
0.001
10
0.1
10
40
50
2742
MUN2211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN2213T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
10 IC/IB = 10
TA = 25C 25C
75C
0.1
10
100
1 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.6
0.4
0.1
0.2
50
0.001
2743
MUN2211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN2214T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 300 250 200 25C 150 100 50 0 VCE = 10 TA = 75C 25C
0.01
0.001
80
90 100
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
TA = 25C 10
25C 75C 1
0.1
10
40
50
2744
MUN2211T1 SERIES
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED LOAD
+12 V
VCC
OUT IN LOAD
2745
MOTOROLA
MUN5111DW1T1 SERIES
Motorola Preferred Devices
5 4
(3)
(2) R1 R2
(1)
MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2)
Rating CollectorBase Voltage CollectorEmitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Thermal Resistance JunctiontoAmbient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25C(1) RJA TJ, Tstg PD 833 65 to +150 *150 C/W C mW
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2746
MUN5111DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (VCB = 50 V, IE = 0) CollectorEmitter Cutoff Current (VCE = 50 V, IB = 0) EmitterBase Cutoff Current (VEB = 6.0 V, IC = 0) MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 nAdc nAdc mAdc
CollectorBase Breakdown Voltage (IC = 10 A, IE = 0) CollectorEmitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS(3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 0.25 Vdc
CollectorEmitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130DW1T1/MUN5131DW1T1 (IC = 10 mA, IB = 1 mA) MUN5115DW1T1/MUN5116DW1T1/ MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5111DW1T1 MUN5112DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) MUN5113DW1T1 3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
2747
MUN5111DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130DW1T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5115DW1T1 MUN5116DW1T1 MUN5131DW1T1 MUN5132DW1T1 Input Resistor MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 0.8 0.055 0.38 0.038
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 1.0 0.1 0.47 0.047
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 1.2 0.185 0.56 0.056
R1/R2
200
150
50
0 50
150
2748
MUN5111DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5111DW1T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
10
100
4 f = 1 MHz lE = 0 V TA = 25C
25C TA = 25C
0.1
0.01 0.001 0 1 2
50
10
0.1
10
40
50
2749
MUN5111DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5112DW1T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
1 TA = 25C
25C
75C 0.1
0.01
0.1
VO = 5 V 9 10
50
0.1
10
40
50
2750
MUN5111DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5113DW1T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10
25C
0.01
40
10
100
1 f = 1 MHz lE = 0 V TA = 25C
100
TA = 75C
25C 25C
10 1
0.6
0.4
0.1
0.2
50
0.001
0.1
10
40
50
2751
MUN5111DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5114DW1T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 25C VCE = 10 V 25C TA = 75C
0.01
0.001
80
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
25C 10
0.1
10
40
50
2752
MUN5111DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5115DW1T1
1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C
VCE = 10 V
VCE = 5.0 V
VCE = 10 V
2753
MOTOROLA
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC70/SOT323 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC70/SOT323 package can be soldered using wave or reflow. The modified gullwinged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. Replace T1 with T3 in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating CollectorBase Voltage CollectorEmitter Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Symbol VCBO VCEO IC PD
R1 PIN1 R2 BASE (INPUT) PIN2 EMITTER (GROUND) PIN3 COLLECTOR (OUTPUT)
MUN5111T1 SERIES
Motorola Preferred Devices
1 2
THERMAL CHARACTERISTICS
Thermal Resistance JunctiontoAmbient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RJA TJ, Tstg TL 833 65 to +150 260 10 C/W C C Sec
1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2754
MUN5111T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (VCB = 50 V, IE = 0) CollectorEmitter Cutoff Current (VCE = 50 V, IB = 0) EmitterBase Cutoff Current (VEB = 6.0 V, IC = 0) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 nAdc nAdc mAdc
CollectorBase Breakdown Voltage (IC = 10 A, IE = 0) CollectorEmitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS(3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 250 250 5.0 15 27 140 130 0.25 Vdc
CollectorEmitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5130T1/MUN5131T1 (IC = 10 mA, IB = 1 mA) MUN5115T1/MUN5116T1/ MUN5132T1/MUN5133T1/MUN5134T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5113T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2755
MUN5111T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5130T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5115T1 MUN5116T1 MUN5131T1 MUN5132T1 Input Resistor MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5111T1/MUN5112T1/MUN5113T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5130T1/MUN5131T1/MUN5132T1 MUN5133T1 MUN5134T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055 0.38
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 1.0 0.1 0.47
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185 0.56
Resistor Ratio
R1/R2
200
150
50
0 50
150
2756
MUN5111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5111T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
10
100
4 f = 1 MHz lE = 0 V TA = 25C
25C TA = 25C
0.1
0.01 0.001 0 1 2
50
10
0.1
10
40
50
2757
MUN5111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5112T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
1 TA = 25C
25C
75C 0.1
0.01
0.1
VO = 5 V 9 10
50
0.1
10
40
50
2758
MUN5111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5113T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10
25C
0.01
40
10
100
1 f = 1 MHz lE = 0 V TA = 25C
100
TA = 75C
25C 25C
10 1
0.6
0.4
0.1
0.2
50
0.001
0.1
10
40
50
2759
MUN5111T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5114T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 25C VCE = 10 V 25C TA = 75C
0.01
0.001
80
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
25C 10
+12 V
LOAD 0.1
10
40
50
2760
MOTOROLA
MUN5211DW1T1 SERIES
Motorola Preferred Devices
5 4
(3)
(2) R1 R2
(1)
MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC RJA TJ, Tstg PD Marking 7A 7B 7C 7D 7E 7F 7G 7H 7J 7K 7L 7M R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 Value 50 50 100 Unit Vdc Vdc mAdc C/W C mW
THERMAL CHARACTERISTICS
Thermal Resistance Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25C(1) 833 65 to +150 *150
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2761
MUN5211DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS(3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5230DW1T1/MUN5231DW1T1 (IC = 10 mA, IB = 1 mA) MUN5215DW1T1/MUN5216DW1T1 MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5211lDW1T1 MUN5212DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5213DW1T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2762
MUN5211DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) (Continued)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5230DW1T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5215DW1T1 MUN5216DW1T1 MUN5233DW1T1 Input Resistor MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 0.8 0.055 0.38 0.038
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 1.0 0.1 0.47 0.047
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 1.2 0.185 0.56 0.056
R1/R2
200
150
50
0 50
150
2763
MUN5211DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5211DW1T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 25C 0.1 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
0.01
0.001
50
10
100
4 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.1
50
0.001
0.1
10
50
2764
MUN5211DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5212DW1T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 25C 0.1 TA = 25C 75C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75C 25C 25C 100
0.01
10
100
4 f = 1 MHz IE = 0 V TA = 25C
75C
25C TA = 25C
10
0.1
0.01 VO = 5 V
50
0.001
10
0.1
10
20
30
40
50
2765
MUN5211DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5213DW1T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
1 25C 75C
TA = 25C 0.1
10
100
1 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.6
0.4
0.1
0.2
50
0.001
2766
MUN5211DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5214DW1T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 300 250 200 25C 150 100 50 0 VCE = 10 TA = 75C 25C
0.01
0.001
80
90 100
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C
25C 10
0.1
10
50
2767
MUN5211DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5215DW1T1
1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C
VCE = 10 V
VCE = 5.0 V
VCE = 10 V
VCE = 5.0 V
2768
MOTOROLA
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-70/SOT-323 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel Use the Device Number to order the 7 inch/3000 unit reel. Replace T1 with T3 in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Symbol VCBO VCEO IC PD
R1 PIN1 R2 BASE (INPUT) PIN2 EMITTER (GROUND) PIN3 COLLECTOR (OUTPUT)
MUN5211T1 SERIES
Motorola Preferred Devices
1 2
THERMAL CHARACTERISTICS
Thermal Resistance Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath RJA TJ, Tstg TL 833 65 to +150 260 10 C/W C C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New devices. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2769
MUN5211T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS(3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 60 100 140 140 350 350 5.0 15 30 200 150 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5230T1/MUN5231T1 (IC = 10 mA, IB = 1 mA) MUN5215T1/MUN5216T1 MUN5232T1/MUN5233T1/MUN5234T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5211lT1 MUN5212T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5213T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2770
MUN5211T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5230T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5215T1 MUN5216T1 MUN5233T1 Input Resistor MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5211T1/MUN5212T1/MUN5213T1 MUN5214T1 MUN5215T1/MUN5216T1 MUN5230T1/MUN5231T1/MUN5232T1 MUN5233T1 MUN5234T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 0.8 0.17 0.8 0.055 0.38
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 1.0 0.21 1.0 0.1 0.47
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 1.2 0.25 1.2 0.185 0.56
Resistor Ratio
R1/R2
200
150
50
0 50
150
2771
MUN5211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5211T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 25C 0.1 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
0.01
0.001
50
10
100
4 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.1
50
0.001
0.1
10
50
2772
MUN5211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5212T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 25C 0.1 TA = 25C 75C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75C 25C 25C 100
0.01
10
100
4 f = 1 MHz IE = 0 V TA = 25C
75C
25C TA = 25C
10
0.1
0.01 VO = 5 V
50
0.001
10
0.1
10
20
30
40
50
2773
MUN5211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5213T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
1 25C 75C
TA = 25C 0.1
10
100
1 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.6
0.4
0.1
0.2
50
0.001
2774
MUN5211T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5214T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 300 250 200 25C 150 100 50 0 VCE = 10 TA = 75C 25C
0.01
0.001
80
90 100
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C
25C 10
0.1
10
50
2775
MUN5211T1 SERIES
TYPICAL APPLICATIONS FOR NPN BRTs
+12 V
ISOLATED LOAD
+12 V
VCC
OUT IN LOAD
2776
MOTOROLA
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT363 package which is ideal for low power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MUN5311DW1T1 SERIES
Motorola Preferred Devices
5 4
(3) R1 Q1
(2) R2
(1)
MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, minus sign for Q2 (PNP) omitted)
Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC RJA TJ, Tstg PD Marking 11 12 13 14 15 16 30 31 32 33 34 35 R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 Value 50 50 100 Unit Vdc Vdc mAdc C/W C mW
THERMAL CHARACTERISTICS
Thermal Resistance Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25C(1) 833 65 to +150 *150
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New resistor combinations. Updated curves to follow in subsequent data sheets.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
2777
MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, minus sign for Q2 (PNP) omitted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 ICBO ICEO IEBO 50 50 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 nAdc nAdc mAdc
Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO V(BR)CEO
Vdc Vdc
ON CHARACTERISTICS(3)
DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 0.25 Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1 (IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1 MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1 Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) MUN5311lDW1T1 MUN5312DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 MUN5313DW1T1
VCE(sat)
VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2
Vdc
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
2778
MUN5311DW1T1 SERIES
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, minus sign for Q2 (PNP) omitted)
(Continued) Characteristic Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k) MUN5330DW1T1 (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k) MUN5315DW1T1 MUN5316DW1T1 MUN5333DW1T1 Input Resistor MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 Symbol VOH Min 4.9 Typ Max Unit Vdc
R1
7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 0.8 0.055 0.38 0.038
10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 1.0 0.1 0.47 0.047
13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 1.2 0.185 0.56 0.056
R1/R2
200
150
50
0 50
150
2779
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5311DW1T1 NPN TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = 25C 25C 0.1 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
0.01
0.001
50
10
100
4 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.1
50
0.001
0.1
10
50
2780
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5311DW1T1 PNP TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
10
100
4 f = 1 MHz lE = 0 V TA = 25C
25C TA = 25C
0.1
0.01 0.001 0 1 2
50
10
0.1
10
40
50
2781
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5312DW1T1 NPN TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 25C 0.1 TA = 25C 75C hFE, DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = 75C 25C 25C 100
0.01
10
100
4 f = 1 MHz IE = 0 V TA = 25C
75C
25C TA = 25C
10
0.1
0.01 VO = 5 V
50
0.001
10
0.1
10
20
30
40
50
2782
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5312DW1T1 PNP TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V
1 TA = 25C
25C
75C 0.1
0.01
0.1
VO = 5 V 9 10
50
0.1
10
40
50
2783
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5313DW1T1 NPN TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C 25C 100
1 25C 75C
TA = 25C 0.1
10
100
1 f = 1 MHz IE = 0 V TA = 25C
25C TA = 25C
0.6
0.4
0.1
0.2
50
0.001
2784
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5313DW1T1 PNP TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10
25C
0.01
40
10
100
1 f = 1 MHz lE = 0 V TA = 25C
100
TA = 75C
25C 25C
10 1
0.6
0.4
0.1
0.2
50
0.001
0.1
10
40
50
2785
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5314DW1T1 NPN TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE, DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = 25C 25C 0.1 75C 300 250 200 25C 150 100 50 0 VCE = 10 TA = 75C 25C
0.01
0.001
80
90 100
4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C
25C 10
0.1
10
50
2786
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5314DW1T1 PNP TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 25C VCE = 10 V 25C TA = 75C
0.01
0.001
80
4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25C
25C 10
0.1
10
40
50
2787
MUN5311DW1T1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS MUN5315DW1T1
1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25C HFE, DC CURRENT GAIN (NORMALIZED) 1000 TA = 25C
VCE = 10 V
VCE = 10 V
VCE = 5.0 V
VCE = 5.0 V
VCE = 10 V
VCE = 10 V
VCE = 5.0 V
VCE = 5.0 V
2788
MOTOROLA
Amplifier Transistors
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
P2N2222A
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 75 6.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO ICEO IBEX 0.01 10 10 10 20 nAdc nAdc nAdc 40 75 6.0 10 Vdc Vdc Vdc nAdc Adc
2789
P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 35 50 75 35 100 50 40 VCE(sat) VBE(sat) 0.6 1.2 2.0 0.3 1.0 Vdc 300 Vdc
mmhos
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time ( (VCC = 30 Vdc, VBE(off) = 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Fi Ad ) (Figure 2) td tr ts tf 10 25 225 60 ns ns ns ns
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity.
2790
P2N2222A
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V +16 V 0 2 V 1.0 to 100 s, DUTY CYCLE 2.0% 1 k < 2 ns 200 +16 V 0 CS* < 10 pF 14 V < 20 ns 1k 1N914 4 V CS* < 10 pF 1.0 to 100 s, DUTY CYCLE 2.0% + 30 V 200
Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope.
TJ = 125C
25C 100 70 50 30 20 10 0.1 55C VCE = 1.0 V VCE = 10 V 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k
0.6
IC = 1.0 mA
10 mA
150 mA
500 mA
0.4
0.2
0 0.005
0.01
0.02 0.03
0.05
0.1
0.2
2.0
3.0
5.0
10
20
30
50
2791
P2N2222A
200 100 70 50 t, TIME (ns) 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 10 TJ = 25C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 500 300 200 100 70 50 30 20 10 7.0 5.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 ts = ts 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C
t, TIME (ns)
tf
10 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k RS = OPTIMUM RS = SOURCE RS = RESISTANCE
10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 50 A 100 A 500 A 1.0 mA
6.0
6.0
4.0
4.0
2.0
2.0
5.0 10
20
50 100
0 50
100 200
5.0 k 10 k 20 k
50 k 100 k
f, FREQUENCY (kHz)
300 200
100 70 50 1.0
0.2 0.3
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS)
20 30
50
2.0
50
70 100
Figure 9. Capacitances
2792
P2N2222A
1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 10 V 0.4 1.0 V COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 0 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 RqVB for VBE RqVC for VCE(sat) +0.5
0.2
2793
MOTOROLA
Amplifier Transistor
PNP Silicon
COLLECTOR 1 2 BASE 3 EMITTER
P2N2907A
MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 60 60 5.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 150C) Emitter Cutoff Current (VEB = 3.0 Vdc) Collector Cutoff Current (VCE = 10 V) Base Cutoff Current (VCE = 30 Vdc, VEB(off) = 0.5 Vdc) 1. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO ICEO IBEX 0.01 10 10 10 50 nAdc nAdc nAdc 60 60 5.0 50 Vdc Vdc Vdc nAdc Adc
2794
P2N2907A
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 75 100 100 100 50 VCE(sat) VBE(sat) 1.3 2.6 0.4 1.6 Vdc 300 Vdc
SWITCHING CHARACTERISTICS
TurnOn Time Delay Time Rise Time TurnOff Time Storage Time Fall Time (VCC = 6.0 Vd IC = 150 mAdc, 6 0 Vdc, 150 Ad IB1 = IB2 = 15 mAdc) (Figure 2) 15 (VCC = 30 Vdc, IC = 150 mAdc, 30 Vd 150 Ad IB1 = 15 mAdc) (Figures 1 and 5) 15 ton td tr toff ts tf 50 10 40 110 80 30 ns ns ns ns ns ns
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 16 V 200 ns 50 1.0 k INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns 0 30 V 200 ns
30 V 200
+15 V
1.0 k 1.0 k 50
1N916
2795
P2N2907A
TYPICAL CHARACTERISTICS
3.0 hFE , NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 55C
0.2 0.3
2.0
3.0
5.0 7.0
10
20
30
50 70 100
200 300
500
1.0
0.4
0.2
0 0.005
0.01
0.2
2.0
3.0
5.0 7.0 10
20 30
50
300 200 100 70 50 30 20 td @ VBE(off) = 0 V 10 7.0 5.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT tr
500 VCC = 30 V IC/IB = 10 TJ = 25C t, TIME (ns) 300 200 tf 100 70 50 30 20 2.0 V 200 300 500 10 7.0 5.0 5.0 7.0 10 ts = ts 1/8 tf VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C
t, TIME (ns)
2796
P2N2907A
TYPICAL SMALL SIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C
10 10 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) IC = 1.0 mA, Rs = 430 500 A, Rs = 560 50 A, Rs = 2.7 k 100 A, Rs = 1.6 k Rs = OPTIMUM SOURCE RESISTANCE NF, NOISE FIGURE (dB) 8.0
6.0
6.0
4.0
4.0
2.0
2.0
5.0 10
20
50
100
50
100
200
5.0 k 10 k
20 k
50 k
f, FREQUENCY (kHz)
VCE = 20 V TJ = 25C
1.0
10
20 30
5.0
10
20
50
100 200
500 1000
Figure 9. Capacitances
1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(on) @ VCE = 10 V
+0.5 0 RqVC for VCE(sat) 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2 0.5 1.0 2.0 RqVB for VBE
0.6
0.4
0.2
0 0.1 0.2
50 100 200
500
5.0 10 20
2797
MOTOROLA
PZT651T1
Motorola Preferred Device
2 3
BASE 1 EMITTER 3
DEVICE MARKING
651
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from JunctiontoAmbient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RJA TL Max 156 260 10 Unit C/W C Sec
1. Device mounted on a FR4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2798
PZT651T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) BaseEmitter Cutoff Current (VEB = 4.0 Vdc) CollectorBase Cutoff Current (VCB = 80 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO 60 80 5.0 0.1 100 Vdc Vdc Vdc Adc nAdc
ON CHARACTERISTICS (2)
DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) CollectorEmitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) BaseEmitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) BaseEmitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) CurrentGain Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0% hFE 75 75 75 40 VCE(sat) VBE(on) VBE(sat) fT 75 0.5 0.3 1.0 1.2 Vdc Vdc MHz Vdc
2799
MOTOROLA
PZT751T1
Motorola Preferred Device
BASE 1
2 3
DEVICE MARKING
ZT751
THERMAL CHARACTERISTICS
Thermal Resistance from JunctiontoAmbient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath RJA TL 156 260 10 C/W C Sec
1. Device mounted on a FR4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2800
PZT751T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) BaseEmitter Cutoff Current (VEB = 4.0 Vdc) CollectorBase Cutoff Current (VCB = 80 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO 60 80 5.0 0.1 100 Vdc Vdc Vdc Adc nAdc
ON CHARACTERISTICS (2)
DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) CollectorEmitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) BaseEmitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) BaseEmitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) CurrentGainBandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. hFE 75 75 75 40 VCE(sat) VBE(on) VBE(sat) fT 75 0.5 0.3 1.0 1.2 Vdc Vdc MHz Vdc
2801
MOTOROLA
PZT2222AT1
Motorola Preferred Device
COLLECTOR 2, 4
BASE 1 3 EMITTER
2 3
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (Open Collector) Collector Current Total Power Dissipation up to TA = 25C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 40 75 6.0 600 1.5 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts C C
THERMAL CHARACTERISTICS
Thermal Resistance from Junction to Ambient Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath RJA TL 83.3 260 10 C/W C Sec
DEVICE MARKING
P1F
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Base-Emitter Cutoff Current (VCE = 60 Vdc, VBE = 3.0 Vdc) Collector-Emitter Cutoff Current (VCE = 60 Vdc, VBE = 3.0 Vdc) Emitter-Base Cutoff Current (VEB = 3.0 Vdc, IC = 0)
Preferred devices are Motorola recommended choices for future use and best overall value.
40 75 6.0
20 10 100
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x 0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
REV 2
2802
PZT2222AT1
ELECTRICAL CHARACTERISTICS continued (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = 55C) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) Noise Figure (VCE = 10 Vdc, IC = 100 Adc, f = 1.0 kHz) hFE 35 50 70 35 100 50 40 VCE(sat) VBE(sat) 0.6 hie 2.0 0.25 hre hfe 50 75 hoe 5.0 25 F 35 200 4.0 dB 300 375 mhos 8.0 1.25 8.0x10-4 4.0x10-4 1.2 2.0 k 0.3 1.0 Vdc 300 Vdc
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cc Ce 300 8.0 25 MHz pF pF
2803
PZT2222AT1
Vi 90% R1 0 tr tp 10% Vi R2 Vo D.U.T. VCC
Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time
Vi = 0.5 V to +9.9 V, VCC = +30 V, R1 = 619 , R2 = 200 . PULSE GENERATOR: PULSE DURATION RISE TIME DUTY FACTOR tp tr = 200 ns 2 ns 0.02 OSCILLOSCOPE: INPUT IMPEDANCE INPUT CAPACITANCE RISE TIME Zi Ci tr > 100 k < 12 pF < 5 ns
Vi +16.2 V
R1 0 TIME Vi D1 13.8 V
Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time
2804
MOTOROLA
PZT2907AT1
Motorola Preferred Device
4 1 2 3
BASE 1
3 EMITTER
THERMAL CHARACTERISTICS
Thermal Resistance Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath RJA TL 83.3 260 10 C/W C Sec
DEVICE MARKING
P2F
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 50 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCE = 30 Vdc, VBE = 0.5 Vdc) Base-Emitter Cutoff Current (VCE = 30 Vdc, VBE = 0.5 Vdc) V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBEX 60 60 5.0 10 50 50 Vdc Vdc Vdc nAdc nAdc nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
2805
PZT2907AT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(2)
DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base-Emitter Saturation Voltages (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) hFE 75 100 100 100 50 VCE(sat) VBE(sat) 1.3 2.6 0.4 1.6 Vdc 300 Vdc
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (IC = 50 mAdc, VCE = 20 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 2.0 Vdc, IC = 0, f = 1.0 MHz) fT Cc Ce 200 8.0 30 MHz pF pF
SWITCHING TIMES
Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0%. (VCC = 6.0 Vdc, IC = 150 mAdc, 6 0 Vd 150 Ad IB1 = IB2 = 15 mAdc) 15 (VCC = 30 Vdc, IC = 150 mAdc, Vd 150 Ad IB1 = 15 mAdc) 15 ton td tr toff ts tf 45 10 40 100 80 30 ns ns
30 V INPUT Zo = 50 PRF = 150 Hz RISE TIME 2.0 ns 0 16 V 200 ns 50 INPUT Zo = 50 PRF = 150 Hz RISE TIME 2.0 ns 0 30 V 50 200 ns
+15 V
6.0 V
200
1.0 k
37
1.0 k
1.0 k
1N916
2806
PZT2907AT1
TYPICAL ELECTRICAL CHARACTERISTICS
1000
100
10 0.1
1000
0.6
VBE(on) @ VCE = 10 V
0.4
0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 REVERSE VOLTAGE (VOLTS)
Figure 5. ON Voltage
Figure 6. Capacitances
2807
MOTOROLA
PZTA14T1
Motorola Preferred Device
SOT223 PACKAGE MEDIUM POWER NPN SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
4 1
BASE 1
2 3
EMITTER 3
DEVICE MARKING
P1N
THERMAL CHARACTERISTICS
Thermal Resistance Junction-to-Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath RJA TL 83.3 260 10 C/W C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2808
PZTA14T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 100 Adc, IB = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 10 Vdc, IC = 0) V(BR)CBO V(BR)CES V(BR)EBO ICBO IEBO 30 30 10 0.1 0.1 Vdc Vdc Vdc Adc Adc
ON CHARACTERISTICS (2)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base-Emitter On Voltage (IC = 100 mAdc, VCE = 5.0 Vdc) hFE 10,000 20,000 VCE(sat) VBE(on) 1.5 2.0 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT 125 MHz
2809
PZTA14T1
TYPICAL ELECTRICAL CHARACTERISTICS
200 k 100 k hFE, DC CURRENT GAIN 70 k 50 k 30 k 20 k 10 k 7.0 k 5.0 k 55C TJ = 125C |h FE|, SMALL-SIGNAL CURRENT GAIN
2.0
25C
VCE = 5.0 V 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500
10
0.2 0.5
1.0
2.0
200
500
1.6
TJ = 25C
20 TJ = 25C
1.4 V, VOLTAGE (VOLTS) C, CAPACITANCE (pF) VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 10 7.0 5.0 Cibo Cobo
0.8
VCE(sat) @ IC/IB = 1000 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
Figure 3. On Voltages
Figure 4. Capacitance
1.0
2.0
1.5
4.0
VB for VBE
1.0
55C to 25C
0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A)
500 1000
10
200 300
500
2810
MOTOROLA
PZTA42T1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 300 300 6.0 500 1.5 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts C C
1 2 3
DEVICE MARKING
P1D
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction-to-Ambient(1) Symbol RJA Max 83.3 Unit C/W
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 Adc, IC = 0) Collector-Base Cutoff Current (VCB = 200 Vdc, IE = 0) Emitter-Base Cutoff Current (VBE = 6.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 6.0 0.1 0.1 Vdc Vdc Vdc Adc Adc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2. 2. Pulse Test Conditions, tp = 300 s, = 0.02.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2811
PZTA42T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) ON CHARACTERISTICS
DC Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) hFE 25 40 40
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Feedback Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Collector-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) Base-Emitter Saturation Voltage (IC = 20 mAdc, IB = 2.0 mAdc) fT Cre VCE(sat) VBE(sat) 50 3.0 0.5 0.9 MHz pF Vdc Vdc
2812
MOTOROLA
PZTA64T1
Motorola Preferred Device
4 1
BASE 1
2 3
EMITTER 3
DEVICE MARKING
P2V
THERMAL CHARACTERISTICS
Thermal Resistance from Junction to Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath RJA TL 83.3 260 10 C/W C Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
2813
PZTA64T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 100 Adc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 A, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 A, IC = 0) Emitter-Base Cutoff Current (VBE = 10 Vdc, IC = 0) Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CES V(BR)CBO V(BR)EBO IEBO ICBO 30 30 10 0.1 0.1 Vdc Vdc Vdc Adc Adc
ON CHARACTERISTICS(2)
DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) Base-Emitter On-Voltage (VCE = 5.0 Vdc, IC = 100 mAdc) hFE 10,000 20,000 VCE(sat) VBE(on) 1.5 2.0 Vdc Vdc
DYNAMIC CHARACTERISTICS
Current-Gain Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. fT 125 MHz
2814
PZTA64T1
200 hFE, DC CURRENT GAIN (X1.0 K) 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 25C VCE = 2.0 V 5.0 V TA = 125C
10 V
55C
2.0 1.0
V, VOLTAGE (VOLTS)
4.0 3.0
1.6
1.2 VBE(on) @ VCE = 5.0 V 0.8 VCE(sat) @ IC/IB = 1000 IC/IB = 100 0.4
2.0
5.0
500
1K
0 0.3 0.5
1.0
200 300
Figure 3. On Voltage
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.1 0.2 0.5 IC = 10 mA 50 mA 100 mA 175 mA TA = 25C 300 mA
1.0 2.0 5.0 10 20 50 100 200 500 1K 2K IB, BASE CURRENT (A)
5K 10K
2815
MOTOROLA
PZTA92T1
Motorola Preferred Device
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Total Power Dissipation up to TA = 25C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 300 300 5.0 500 1.5 65 to +150 150 Unit Vdc Vdc Vdc mAdc Watts C C
2 3
DEVICE MARKING
P2D
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RJA Max 83.3 Unit C/W
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorBase Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 100 Adc, IC = 0) CollectorBase Cutoff Current (VCB = 200 Vdc, IE = 0) EmitterBase Cutoff Current (VBE = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 300 300 5.0 0.25 0.1 Vdc Vdc Vdc Adc Adc
ON CHARACTERISTICS
DC Current Gain(2) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 30 mAdc, VCE = 10 Vdc) Saturation Voltages (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) hFE 25 40 25 VCE(sat) VBE(sat) Vdc 0.5 0.9
DYNAMIC CHARACTERISTICS
CollectorBase Capacitance @ f = 1.0 MHz (VCB = 20 Vdc, IE = 0) CurrentGain Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Ccb fT 50 6.0 pF MHz
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. 2. Pulse Test: Pulse Width 300 s; Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
2816
MOTOROLA
PZTA96T1
Motorola Preferred Device
MAXIMUM RATINGS
Rating CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current Total Power Dissipation up to TA = 25C(1) Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 450 450 5.0 500 1.5 65 to +150 150 Unit Vdc Vdc Vdc
mAdc Watts C C
2 3
DEVICE MARKING
ZTA96
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance from Junction to Ambient(1) Symbol RJA Max 83.3 Unit C
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) CollectorEmitter Breakdown Voltage (IC = 100 Adc, IE = 0) EmitterBase Breakdown Voltage (IE = 10 Adc, IC = 0) CollectorBase Cutoff Current (VCB = 400 Vdc, IE = 0) EmitterBase Cutoff Current (VBE = 4.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 450 450 5.0 0.1 0.1 Vdc Vdc Vdc Adc Adc
ON CHARACTERISTICS
DC Current Gain(2) (IC = 10 mAdc, VCE = 10 Vdc) Saturation Voltages (IC = 20 mAdc, IB = 2.0 mAdc) (IC = 20 mAdc, IB = 2.0 mAdc) hFE 50 150 Vdc VCE(sat) VBE(sat) 0.6 1.0
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. 2. Pulse Test: Pulse Width 300 s; Duty Cycle = 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
2817
MOTOROLA
Advance Information
Integrated Relay/Solenoid Driver
Optimized to Switch 3 V to 5 V Relays from a 5 V Rail Compatible with TX and TQ Series Telecom Relays Rated up to 300 mW at 3 V to 5 V Features Low Input Drive Current Internal Zener Clamp Routes Induced Current to Ground Rather Than Back to Supply Guaranteed Off State with No Input Connection Supports Large Systems with Minimal OffState Leakage ESD Resistant in Accordance with the 2000 V Human Body Model Provides a Robust Driver Interface Between Relay Coil and Sensitive Logic Circuits Applications include: Telecom Line Cards and Telephony Industrial Controls Security Systems Appliances and White Goods Automated Test Equipment Automotive Controls This device is intended to replace an array of three to six discrete components with an integrated SMT part. It is available in a SOT23 package. It can be used to switch other 3 to 5 Vdc Inductive Loads such as solenoids and small DC motors. MAXIMUM RATINGS
Rating Power Supply Voltage Recommended Operating Supply Voltage Input Voltage Reverse Input Voltage Output Sink Current Continuous Junction Temperature Operating Ambient Temperature Range Storage Temperature Range Symbol VCC VCC Vin(fwd) Vin(rev) IO TJ TA Tstg
MDC3105LT1
Motorola Preferred Device
3 1 2
INTERNAL CIRCUIT DIAGRAM Vout Vin 1.0 k 6.8 V (1) 33 k GND (2) (3)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) Derate above 25C Thermal Resistance Junction to Ambient 1. FR5 PCB of 1 x 0.75 x 0.062, TA = 25C
Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a new product. Specifications and information herein are subject to change without notice.
Symbol PD RqJA
Unit mW C/W
2818
MDC3105LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Output Zener Breakdown Voltage (@ IT = 10 mA Pulse) Output Leakage Current @ 0 Input Voltage (Vout = 5.5 Vdc, Vin = O.C., TA = 25C) (Vout = 5.5 Vdc, Vin = O.C., TA = 85C) V(BRout) V(BRout) IOO 5.0 30 6.4 6.8 0.7 7.2 V A
ON CHARACTERISTICS
Input Bias Current @ Vin = 4.0 Vdc (IO = 250 mA, Vout = 0.4 Vdc, TA = 40C) (correlated to a measurement @ 25C) Output Saturation Voltage (IO = 250 mA, Vin = 4.0 Vdc, TA = 40C) (correlated to a measurement @ 25C) Output Sink Current Continuous (TA = 40C, VCE = 0.4 Vdc, Vin = 4.0 Vdc ) (correlated to a measurement @ 25C) IC(on) 250 Iin 2.5 Vdc 0.2 0.4 mA mAdc
1. Minimum input slew rate must be followed to avoid overdissipating the device.
tf 90% 50% 10% tPLH 90% 50% 10% tTHL tTLH tPHL
Vin
Vout
2819
MDC3105LT1
+4.5 VCC +5.5 Vdc
+ + AROMAT TX2L23 V
74HC04 OR EQUIVALENT
74HC04 OR EQUIVALENT
GND (2)
GND (2)
Figure 2. A 3.0V, 200mW Dual Coil Latching Relay Application with 5.0 VHCMOS Interface
+ + AROMAT TX2L23 V
74HC04 OR EQUIVALENT
74HC04 OR EQUIVALENT
GND (2)
GND (2)
Figure 3. A 3.0V, 200mW Dual Coil Latching Relay Application with 3.0 VHCMOS Interface 2820 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MDC3105LT1
+4.5 VCC +5.5 Vdc
+ + AROMAT TX2L23 V
74LS04
74LS04
GND (2)
GND (2)
Figure 4. A 3.0V, 200mW Dual Coil Latching Relay Application with TTL Interface
+ AROMAT R1 TX25 V R2
+ AROMAT TX25 V
Max Continuous Current Calculation R1 = R2 = 178 Nominal @ TA = 25C Vout (3) Assuming 10% Make Tolerance, R1 = R2 = (178 ) (0.9) = 160 Min @ TA = 25C TC for Annealed Copper Wire is 0.4%/C R1 = R2 = (160 ) [1+(0.004) (4025)] = 118 Min @ 40C
74HC04 OR EQUIVALENT
Vin (1)
N
Io
2821
MDC3105LT1
TYPICAL OPERATING WAVEFORMS
(Circuit of Figure 5)
4.5 225
175
2.5
125
1.5
75
500M
25 10 30 50 TIME (ms) 70 90
172
132
92
52
12 10 30 50 TIME (ms) 70 90
600 500 400 hFE 300 200 100 0 1 10 100 Io, OUTPUT SINK CURRENT (mA) 1000 Vo = 1.0 V Vo = 0.25 V TJ = 85C TJ = 25C TJ = 125C
0.6 1 0.4 10 50
175 125
250 IC = 350 mA
TJ = 40C
0.2
0 1E5
1E2
Figure 11. Collector Saturation Region Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
MDC5001T1
SILICON SMALLBLOCK INTEGRATED CIRCUIT
5 4
R3
THERMAL CHARACTERISTICS
Characteristic Total Device Power Dissipation (FR5 PCB of 1 0.75 0.062, TA = 25C) Derate above 25C Thermal Resistance, Junction to Ambient Symbol PD 150 1.2 RJA 833 Max Unit mW mW/C C/W
REV 1
2823
MDC5001T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Recommended Operating Supply Voltage Power Supply Current (VCC = 2.75 V) Vref, Iout are unterminated See Figure 8 Q2 Collector Emitter Breakdown Voltage (IC2 = 10 A, IB2 = 0) Reference Voltage (VENBL = VCC = 2.75 V, Vout = 0.7 V) (Iout = 30 A) (Iout = 150 A) See Figure 1 Reference Voltage (VENBL = VCC = 2.75 V, Vout = 0.7 V, 40C TA +85C) VCC Pulse Width = 10 mS, Duty Cycle = 1% (Iout = 10 A) (Iout = 30 A) (Iout = 100 A) See Figures 2 and 11 Symbol VCC ICC Min 1.8 Typ 2.75 130 Max 10 200 Unit Volts A
V(BR)CEO2 Vref
15
Volts Volts
2.050 2.110
2.075 2.135
2.100 2.160
DVref
5.0 15 25 10 30 50
mV
The following SPICE models are provided as a convenience to the user and every effort has been made to insure their accuracy. However, no responsibility for their accuracy is assumed by Motorola.
.MODEL Q4 NPN
BF = 136 BR = 0.2 CJC = 318.6 f CJE = 569.2 f CJS = 1.9 p EG = 1.215 FC = 0.5 IKF = 24.41 m IKR = 0.25 IRB = 0.0004 IS = 256E18 ISC = 1 f ISE = 500E18 ITF = 0.9018 MJC = 0.2161 MJE = 0.3373 MJS = 0.13 NC = 1.09 NE = 1.6 NF = 1.005 RB = 140 RBM = 70 RC = 180 RE = 1.6 TF = 553.6 p TR = 10 n VAF = 267.6 VAR = 12 VJC = 0.4172 VJE = 0.7245 VJS = 0.39 VTF = 10 XTB = 1.5 XTF = 2.077 XTI = 3
RESISTOR VALUES
R1 = 12 K R2 = 6 K R3 = 3.4 K R4 = 12 K R5 = 20 K R6 = 40 K
These models can be retrieved electronically by accessing the Motorola Web page at http://designnet.sps.mot.com/models and searching the section on SMALLBLOCK models
2824
MDC5001T1
TYPICAL OPEN LOOP CHARACTERISTICS
10 = 1000 m A = 500 m A = 100 m A = 10 mA Iout Iout Iout Iout 6 V ENBL = VCC TJ = 25C 8 7 6 5 4 3 2 1 7 8 9 0 0 1 2 3 4
2825
5 Vref (Vdc)
MDC5001T1
TYPICAL OPEN LOOP CHARACTERISTICS (Refer to Circuits of Figures 10 through 15)
50 40 30 20 V ref (mV) 10 0 10 20 30 40 50 45 35 25 15 5 5 15 25 35 45 55 TJ, JUNCTION TEMPERATURE (C) Iout = 10 mA ICC , SUPPLY CURRENT ( m Adc) VCC = 2.75 Vdc VENBL = VCC Iout = 500 mA Iout = 100 mA Iout = 30 mA 900 800 700 600 500 400 300 200 100 65 75 85 0 0 1 2 3 4 5 6 7 VCC, SUPPLY VOLTAGE (Vdc) 8 9 10 TJ = 85C TJ = 25C VENBL = VCC TJ = 40C
TJ = 40C TJ = 25C
TJ = 85C
0.5
1.0
2.5
3.0
TJ = 25C MIN VENBL FOR STABLE Vref @ VCC 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Venable (Vdc) 3.5 4.0 4.5 5.0
2826
MDC5001T1
TYPICAL CLOSED LOOP PERFORMANCE (Refer to Circuits of Figures 16 & 17)
1.5 1.0 0.5 IC3 = 15 mA IC3 = 10 mA V ref (%) IC3 = 3 mA VCC = 2.75 Vdc VENBL = VCC
4.0 3.0 2.0 1.0 0 1.0 IC3 = 1 mA 2.0 3.0 65 75 85 0 VCC = 2.75 Vdc VENBL = VCC TA = 25C 50 100 150 200 250 EXTERNAL TRANSISTOR DC BETA @ IC3 300 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA
D IC 3 (%)
5.0
D I C 3 (%)
5.0 IC3 = 15 mA IC3 = 10 mA IC3 = 3 mA IC3 = 1 mA 0 50 250 100 150 200 HFE, EXTERNAL TRANSISTOR DC BETA 300
10 15
2827
MDC5001T1
OPEN LOOP TEST CIRCUITS
ICC ICC VCC (4) VCC (4)
Q1 Q1 ENABLE (5) Vref (6) Q2 MDC5001 + Q4 Iout VCC GND (2) & (3) GND (2) & (3) + VBE3 = 0.7 V A V Vref Iout (1) Iout Iref
ENABLE (5)
Q4 VCC
See NOTE 1
VCC (4)
VCC (4)
Q1
IB Vref (6) ENABLE (5) Iref V Vref A GND (2) & (3) Q4
Q1
ENABLE (5)
Q2 MDC5001
Q4
VBE3 = 0.7 V
1.5 V
See NOTE 1
VCC (4) + + VCC = 2.75 V ENABLE (5) IENBL A + Q1 VCC Vref (6) Q2 MDC5001 Q4 Iout (1) Iout Iref = 30 mA ENABLE (5) +
VCC (4)
Q1
Vref (6) Q2 MDC5001 Q4 Iout (1) Iout Vref + V Iout A + VBE3 = 0.7 V Iref
VENBL VENBL + GND (2) & (3) VBE3 = 0.7 V GND (2) & (3)
See NOTE 1
NOTE 1: VBE3 is used to simulate actual operating conditions that reduce VCE2 & HFE2, and increase IB2 & Vref.
2828
MDC5001T1
CLOSED LOOP TEST CIRCUITS
VCC (4) A IC3
Q1
Vref (6) ENABLE (5) Q2 MDC5001 + VCC = 2.75 V Q4 Iout (1) A Iout V Vref VBE3
Q3
Figure 16. Vref and RF Stage IC3 versus HFE3 Test Circuit
Q1
Vref (6) ENABLE (5) Q2 MDC5001 + VCC = 2.75 V Q4 0.1 mF 100 pF 0.018 mF GND (2) & (3) NOTE: External RCs used to Maintain Broadband Stability of MRF941 51 100 pF 0.018 mF Iout (1) 1K VBE3 Q3 MRF941 HFE = 113
51
2829
MDC5001T1
APPLICATION CIRCUITS
VCC (4) REGULATED VCC = 2.75 Vdc
470 pF RF IN
8.0 nH 9 pF
Figure 18. Class A Biasing of a Typical 900 MHz BJT Amplifier Application
VCC (4) REGULATED VCC = 2.75 Vdc
ID = 15 mAdc R5 43 W RFC
Q1
Vref = 2.085 Vdc 1000 pF 6.8 nH 2.7 pF 1K RF OUT R6 22 K + EGS 5 Vdc Q3 MRF9811 Typ
Figure 19. Class A Biasing of a Typical 890 MHz Depletion Mode GaAs FET Amplifier 2830 Motorola SmallSignal Transistors, FETs and Diodes Device Data
Section 3
GreenLine Portfolio
In Brief . . .
New in this revision is Motorolas GreenLine portfolio of devices. These devices feature energyconserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the power demands of your products. In an increasingly powerhungry world, Motorolas GreenLine portfolio makes powerful sense. So much sense that we plan to continue adding devices to the portfolio. Chances are, there are Motorola GreenLine devices applicable to one or more of your products ones that can help save energy, dollars and the environment. Currently, our portfolio consists of three families: LowLeakage Switching Diodes: Reverse leakage specifications guaranteed to 500 pA. They help extend battery life and are ideal for small battery powered systems in which standby power is essential. Applications include ESD protection, reverse voltage protection, and steering logic. Bipolar Output Driver Transistors: Ultralow collector saturation voltage. They deliver more energy to the intended load with less power wasted through dissipation loss. Especially effective in lower voltage battery powered applications and prolong battery life in portable and handheld communications and personal digital equipment. Applications include low voltage display light drivers and general output drivers. Small Signal HDTMOS: Lowest ever drainsource resistance versus package size. Lower rDS(on) means less wasted energy through dissipation loss. Especially effective for lowcurrent applications where energy conservation is crucial. These small MOSFETs are ideal for spacesensitive power management circuitry. Applications include low current switchmode power supplies, uninterruptable power supplies (UPS), power management systems, and bias switching. This chapter exclusively highlights the GreenLine devices, which are also listed in their respective Transistor, Diode and MOSFET chapters.
3 3 1 2 2 1
6 4 1 2 1 3 2 3
3 1 2 1
31
MOTOROLA
BSS84LT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the Greenline Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Reduced power loss conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, load switching, power management in portable and batterypowered products such as computers, printers, cellular and cordless telephones. 1 Energy Efficient
GATE
3 DRAIN
3 1 2
DEVICE MARKING
BSS84LT1 = PD
ORDERING INFORMATION
Device BSS84LT1 BSS84LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
32
BSS84LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) GateSource Threaded Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 5.0 Vdc, ID = 100 mAdc) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 2.5 0.130 0.520 V A ( (VDD = 15 Vdc, ID = 2.5 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 30 10 5.0 pF VGS(th) rDS(on) |yfs| 0.8 50 5.0 2.0 10 Vdc Ohms mS V(BR)DSS IDSS IGSS 0.1 15 60 60 Adc 50 Vdc Adc Symbol Min Typ Max Unit
0.15 0.1
33
BSS84LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 9 VGS = 4.5 V 8 7 6 5 4 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AMPS) 55C 25C 150C RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
2 1.8 1.6 1.4 1.2 1 0.8 0.6 55 VGS = 4.5 V ID = 0.13 A VGS = 10 V ID = 0.52 A
45
95
145
0.1
TJ = 150C
25C
55C
0.01
0.001
0.5
1.0
1.5
2.0
2.5
3.0
34
MOTOROLA
BSS138LT1
Motorola Preferred Device
3 1 2
2 SOURCE
DEVICE MARKING
BSS138LT1 = J1
ORDERING INFORMATION
Device BSS138LT1 BSS138LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
35
BSS138LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) GateSource Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) GateSource Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = 40C to +85C) (VGS = 5.0 Vdc, ID = 200 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time TurnOff Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) Vdc 0 2 Adc ) td(on) td(off) 20 20 ns (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss 40 12 3.5 50 25 5.0 pF VGS(th) rDS(on) gfs 100 5.6 10 3.5 mmhos 0.5 1.5 Vdc Ohms V(BR)DSS IDSS IGSS 0.1 0.5 0.1 Adc 50 Vdc Adc Symbol Min Typ Max Unit
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature.
36
BSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.8 TJ = 25C 0.7 I D , DRAIN CURRENT (AMPS) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 VGS = 3.25 V VGS = 3.0 V VGS = 2.75 V VGS = 2.5 V I D , DRAIN CURRENT (AMPS) VGS = 3.5 V 0.9 0.8 0.7 150C 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) VGS, GATETOSOURCE VOLTAGE (VOLTS) VDS = 10 V 55C 25C
ID = 1.0 mA
0.875
20
45
70
95
120
145
4 ID = 200 mA 2
0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC)
37
BSS138LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 10 9 8 150C 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 2.5 V RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 8 VGS = 2.75 V 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) 25C 150C
55C
VGS = 10 V 4 3.5 3 2.5 2 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35
150C
25C
55C
0.4
0.45
0.5
120 100
0.1
TJ = 150C
25C
55C 80 60 Ciss
0.01
40 20 Coss Crss 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 5 10 15 20 25 VSD, DIODE FORWARD VOLTAGE (VOLTS)
0.001
38
MOTOROLA
MGSF1N02LT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dcdc converters and power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT23 Surface Mount Package Saves Board Space
3 DRAIN
1 2 3
1 GATE 2 SOURCE
ORDERING INFORMATION
Device MGSF1N02LT1 MGSF1N02LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
39
MGSF1N02LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 6) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.8 0.6 0.75 V A ( (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 125 120 45 pF VGS(th) rDS(on) 0.075 0.115 0.090 0.130 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
1.5
TJ = 150C
310
MGSF1N02LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 0.2 150C 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ID, DRAIN CURRENT (AMPS) 55C VGS = 4.5 V 25C 0.14 0.13 0.12 0.11 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 55 5 45 95 145 VGS = 4.5 V ID = 1 A VGS = 10 V ID = 2 A
10 VDS = 16 V TJ = 25C 8
4 ID = 2.0 A
2 0 0 1000 2000
3000
4000
5000
6000
0.1
0.01
0.001 0 0.2 0.4 0.6 0.8 1 VSD, DIODE FORWARD VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
TJ = 150C
25C
55C
10
10
15
20
Figure 8. Capacitance
311
MOTOROLA
MGSF1N03LT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dcdc converters and power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT23 Surface Mount Package Saves Board Space
3 DRAIN
1 2
ORDERING INFORMATION
Device MGSF1N03LT1 MGSF1N03LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
312
MGSF1N03LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 6) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.8 0.6 0.75 V A ( (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 140 100 40 pF VGS(th) rDS(on) 0.08 0.125 0.10 0.145 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 30 Vdc Adc Symbol Min Typ Max Unit
1.5 55C TJ = 150C 0.5 25C 0 1 1.5 2 2.5 3 VGS, GATETOSOURCE VOLTAGE (VOLTS) 3.5
1.5
3.25 V
313
MGSF1N03LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS 0.24 150C 0.16 0.14 0.12 0.1 0.08 55C 0.06 0.04 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) VGS = 10 V 150C
0.19
0.14
25C
55C 0.09
0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ID, DRAIN CURRENT (AMPS)
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 55 25 0 25 50 75 100 125 150 VGS = 10 V ID = 2 A VGS = 4.5 V ID = 1 A
10 VDS = 24 V TJ = 25C 8
4 ID = 2.0 A
2 0 0 1000 2000
3000
4000
5000
6000
0.1
TJ = 150C
25C
55C
0.01
Ciss
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Figure 8. Capacitance
314
MOTOROLA
MGSF1P02ELT1
Preliminary Information
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dcdc converters and power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life
3 DRAIN
1 2
2 SOURCE
ORDERING INFORMATION
Device MGSF1P02ELT1 MGSF1P02ELT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
315
MGSF1P02ELT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 0.75 Adc) (VGS = 2.5 Vdc, ID = 0.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 6) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.5 0.6 0.75 V A ( (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 130 120 60 pF VGS(th) rDS(on) 0.20 0.32 0.26 0.50 0.7 0.85 1.2 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
316
MOTOROLA
MGSF1P02LT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dcdc converters and power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life
3 DRAIN
1 2
2 SOURCE
ORDERING INFORMATION
Device MGSF1P02LT1 MGSF1P02LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
317
MGSF1P02LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.5 Adc) (VGS = 4.5 Vdc, ID = 0.75 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 6) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.5 0.6 0.75 V A ( (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 130 120 60 pF VGS(th) rDS(on) 0.235 0.375 0.350 0.500 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
3.25 V
25C
0.25 0
3.5
10
318
MGSF1P02LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 0.55 0.4 0.38 0.36 0.34 0.32 0.3 0.28 0.26 0.24 0.22 0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
0.45 25C 0.4 55C 0.35 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID, DRAIN CURRENT (AMPS)
1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 55 5 45 95 145 VGS = 4.5 V ID = .75 A VGS = 10 V ID = 1.5 A
10 VDS = 16 V TJ = 25C 8
0.1
0.01
0.001
C, CAPACITANCE (pF)
TJ = 150C
25C
55C
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
10
10
Figure 8. Capacitance
319
MOTOROLA
Preliminary Information
MGSF3441VT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
1 2 5 6 DRAIN
D D G
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
3 GATE SOURCE 4
5 sec
ORDERING INFORMATION
Device MGSF3441VT1 MGSF3441VT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
320
MGSF3441VT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 3.3 A) (VGS = 2.5 Vdc, ID = 2.9 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.80 1.0 20 1.2 A A V ( (VDD = 15 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 27 17 52 45 3000 50 30 80 70 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 0.45 rDS(on) 0.078 0.110 0.090 0.135 Ohms Vdc V(BR)DSS 20 IDSS IGSS 1.0 4.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
321
MGSF3441VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 VGS = 4.5 V 16 ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 3.0 V 12 2.5 V 8.0 2.0 V 4.0 1.5 V 0 0 1.0 2.0 3.0 4.0 5.0 VDS, DRAINTOSOURCE VOLTAGE (V) 0 0 1.0 2.0 3.0 4.0 VGS, GATETOSOURCE VOLTAGE (V) 4.0 V 3.5 V 16 25C 12 20 TC = 55C 125C
8.0
4.0
1400 1200
0.24 C, CAPACITANCE (pF) VGS = 2.5 V 0.18 1000 800 600 400 Coss 200 0 0 4.0 8.0 12 16 20 ID, DRAIN CURRENT (A) 0 0 4.0 8.0 12 16 20 VDS, DRAINTOSOURCE VOLTAGE (V) Crss Ciss
0.12
VGS = 4.5 V
0.06
Figure 4. Capacitance
4.0
VDS = 10 V ID = 3.3 A
1.8 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V ID = 3.3 A
3.0
2.0
1.0 0 0 2.0 4.0 6.0 8.0 10 Qg, TOTAL GATE CHARGE (nC)
25
25
50
75
100
125
150
322
MGSF3441VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 TJ = 150C R DS(on) , ONRESISTANCE ( W ) IS , SOURCE CURRENT (A) 10 TJ = 25C 0.24 0.30 ID = 3.3 A
0.18
0.12
0.06 0
1.0 0 0.25 0.50 0.75 1.00 1.25 1.50 VSD, SOURCETODRAIN VOLTAGE (V)
2.0
4.0
6.0
8.0
20
12
ID = 250 mA
8.0
4.0 0 25 0 25 50 75 100 125 0.01 0.1 1.0 TIME (sec) 10 TJ, TEMPERATURE (C)
2.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1.0 DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1.0 10 30 t1 NOTES: PDM 1. DUTY CYCLE, D = t1/t2 2. PER UNIT BASE = 2. RthJA = 62.5C/W 3. TJM TA = PDMZthJA(t) 4. SURFACE MOUNTED
SINGLE PULSE
t2
323
MOTOROLA
Preliminary Information
MGSF3441XT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
ORDERING INFORMATION
Device MGSF3441XT1 MGSF3441XT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
324
MGSF3441XT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 1.5 A) (VGS = 2.5 Vdc, ID = 1.2 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.80 1.0 20 1.2 A A V ( (VDD = 15 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 27 17 52 45 3000 50 30 80 70 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 0.45 rDS(on) 0.078 0.110 0.100 0.135 Ohms Vdc V(BR)DSS 20 IDSS IGSS 1.0 4.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
325
MOTOROLA
Preliminary Information
MGSF3442VT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
5 sec
ORDERING INFORMATION
Device MGSF3442VT1 MGSF3442VT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
326
MGSF3442VT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 4.0 A) (VGS = 2.5 Vdc, ID = 3.4 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 8.0 24 36 10 20 40 60 20 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 0.6 rDS(on) 0.058 0.072 0.070 0.095 Ohms Vdc V(BR)DSS 20 IDSS IGSS 1.0 5.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
327
MGSF3442VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 VGS = 4.5 V 4.0 V 3.5 V 3.0 V 2.5 V 16 ID , DRAIN CURRENT (A) 20 TC = 55C 125C 25C
12 2.0 V 8.0
12
8.0
4.0 1.5 V 0 0 1.0 2.0 3.0 4.0 5.0 VDS, DRAINTOSOURCE VOLTAGE (V)
4.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS, GATETOSOURCE VOLTAGE (V)
0.14 R DS(on) , ONRESISTANCE ( W) 0.12 VGS = 2.5 V C, CAPACITANCE (pF) 0.10 0.08 0.06 0.04 0.02 0 0 4.0 8.0 12 16 20 ID, DRAIN CURRENT (A)
1200 1000 800 600 400 200 0 0 4.0 8.0 12 16 20 VDS, DRAINTOSOURCE VOLTAGE (V) Ciss
VGS = 4.5 V
Coss Crss
Figure 4. Capacitance
1.8 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V ID = 4.0 A
4.0
3.0
2.0
1.0 0 0 2.0 4.0 6.0 8.0 Qg, TOTAL GATE CHARGE (nC)
25
25
50
75
100
125
150
328
MGSF3442VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 TJ = 150C R DS(on) , ONRESISTANCE ( W) IS , SOURCE CURRENT (A) TJ = 25C 10 0.16 0.20 ID = 4.0 A
0.12
0.08
0.04 0
1.0 0 0.25 0.50 0.75 1.00 1.25 1.50 VSD, SOURCETODRAIN VOLTAGE (V)
2.0
4.0
6.0
8.0
0.2 0.1 V GS(th) , VARIANCE (V) 0 0.1 0.2 0.3 0.4 50 ID = 250 mA
20
12
8.0
4.0 0 25 0 25 50 75 100 125 0.01 0.1 1.0 TIME (sec) 10 TJ, TEMPERATURE (C)
2.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1.0 DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1.0 10 30 t1 NOTES: PDM 1. DUTY CYCLE, D = t1/t2 2. PER UNIT BASE = 2. RthJA = 62.5C/W 3. TJM TA = PDMZthJA(t) 4. SURFACE MOUNTED
SINGLE PULSE
t2
329
MOTOROLA
Preliminary Information
MGSF3442XT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
ORDERING INFORMATION
Device MGSF3442XT1 MGSF3442XT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
330
MGSF3442XT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 1.7 A) (VGS = 2.5 Vdc, ID = 1.3 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 8.0 24 36 10 20 40 60 20 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 0.6 rDS(on) 0.058 0.072 0.070 0.095 Ohms Vdc V(BR)DSS 20 IDSS IGSS 1.0 5.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
331
MOTOROLA
Preliminary Information
MGSF3454VT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
5 sec
ORDERING INFORMATION
Device MGSF3454VT1 MGSF3454VT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
332
MGSF3454VT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 4.2 A) (VGS = 4.5 Vdc, ID = 3.4 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 20 30 35 20 15 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 1.0 rDS(on) 0.05 0.07 0.065 0.095 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 25 100 nAdc Adc Vdc Symbol Min Typ Max Unit
333
MGSF3454VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 VGS = 10, 9, 8, 7, 6V I D , DRAIN CURRENT (A) 16 5V I D , DRAIN CURRENT (A) 16 20 TJ = 55C 25C
12 4V
12
125C
4 3V 0 0 1 2 3 4
0.16 C, CAPACITANCE (pF) 400 320 240 160 80 0 0 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 0 Crss 6 12 Coss
0.08
18
24
30
Figure 4. Capacitance
10 VGS, GATETOSOURCE VOLTAGE (V) RDS(on) , ONRESISTANCE (OHMS) (NORMALIZED) VDS = 15 V ID = 4.2 A
1.25
2 0 0 1.5 3.0 4.5 6.0 7.5 9.0 Qg, TOTAL GATE CHARGE (nC)
1.00
0.75 50
25
125
150
334
MGSF3454VT1
TYPICAL ELECTRICAL CHARACTERISTICS
40 RDS(on) , ONRESISTANCE (OHMS) I S , SOURCE CURRENT (A) 0.20
0.16
10
TJ = 150C TJ = 25C
0.12
0.08
ID = 4.2 A
0.04
1 0 0.25 0.50 0.75 1.00 1.25 1.5 1.75 VSD, SOURCETODRAIN VOLTAGE (V)
10
0.4 0.2 V GS(th) , VARIANCE (V) 0.0 0.2 0.4 0.6 0.8 50
30
18
12
25
25
50
75
100
0 0.01
0.10
10.00
0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 1.0E03 1.0E02 t1 P(pk)
0.01 1.0E04
RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 1.0E+00 1.0E+01
335
MOTOROLA
Preliminary Information
MGSF3454XT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
ORDERING INFORMATION
Device MGSF3454XT1 MGSF3454XT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
336
MGSF3454XT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.75 A) (VGS = 4.5 Vdc, ID = 1.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 15 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 345 215 140 pF VGS(th) 1.0 rDS(on) 0.05 0.07 0.065 0.095 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 25 100 nAdc Adc Vdc Symbol Min Typ Max Unit
337
MGSF3454XT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.16 R DS(on) , ONRESISTANCE (W) 0.14 0.12 VGS = 4.5 V 0.10 0.08 55C 0.06 0.04 0 0.5 1.0 1.5 2.0 2.5 3.0 ID, DRAIN CURRENT (AMPS) 10 0 4.0 8.0 12 16 20 24 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 25C TJ = 150C C, CAPACITANCE (pF) 1000
100
Figure 4. Capacitance
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 55 5.0 45 95 145 TJ, JUNCTION TEMPERATURE (C) ID = 1.5 A VGS = 4.5 V
8.0
6.0
4.0
2.0 0 0 2.0 4.0 6.0 8.0 10 QG, TOTAL GATE CHARGE (nC)
1.6 R DS(on) , ONRESISTANCE (NORMALIZED) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 55 5.0 45 95 145 TJ, JUNCTION TEMPERATURE (C) IS, SOURCE CURRENT (AMPS) ID = 6.4 A VGS = 10 V
10
1.0
TJ = 150C
25C 55C
0.1
0.01
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCETODRAIN VOLTAGE (VOLTS)
338
MGSF3454XT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.5 R DS(on) , ONRESISTANCE (W) 2.0 1.8 0.4 1.6 0.3 V GS(th) (VOLTS) 1.4 1.2 1.0 0.8 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATETOSOURCE VOLTAGE (VOLTS) 0.6 50 25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) ID = 250 mA
20
16 POWER (WATTS)
12
8.0
1.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1.0 10 100 1.0 k SQUARE WAVE PULSE DURATION (sec) P(pk) RJA(t) = r(t) RJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TA = P(pk) RJA(t)
t1
339
MOTOROLA
Preliminary Information
MGSF3455VT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
5 sec
ORDERING INFORMATION
Device MGSF3455VT1 MGSF3455VT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
340
MGSF3455VT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 3.5 A) (VGS = 4.5 Vdc, ID = 2.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 15 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 3000 20 30 35 20 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 1.0 rDS(on) 0.080 0.134 0.100 0.190 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 5.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
341
MGSF3455VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 VGS = 10, 9, 8, 7 V I D , DRAIN CURRENT (A) 16 5V 12 6V I D , DRAIN CURRENT (A) 16 20 TJ = 55C 25C 125C 12
4V
4 3V 0 0 1 2 3 4
0.24 C, CAPACITANCE (pF) 420 340 260 180 100 0 20 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 0 Crss
Coss
0.06
12
18
24
30
Figure 4. Capacitance
10 VGS, GATETOSOURCE VOLTAGE (V) RDS(on) , ONRESISTANCE (OHMS) (NORMALIZED) VDS = 15 V ID = 3.5 A
25
125
150
342
MGSF3455VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 RDS(on) , ONRESISTANCE (OHMS) 0.40
10 TJ = 150C
0.32
0.24
TJ = 25C
0.16
ID = 3.5 A
0.08 0
1 0 0.25 0.50 0.75 1.00 1.25 1.5 1.75 VSD, SOURCETODRAIN VOLTAGE (V)
10
0.60 0.45 V GS(th) , VARIANCE (V) 0.30 0.15 0.0 0.15 0.3 50 ID = 250 A
30
18
12
6 0 0.01
25
0.10
10.00
0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 1.0E03 1.0E02 t1 P(pk)
0.01 1.0E04
RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 1.0E+00 1.0E+01
343
MOTOROLA
Preliminary Information
MGSF3455XT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
ORDERING INFORMATION
Device MGSF3455XT1 MGSF3455XT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
344
MGSF3455XT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.45 A) (VGS = 4.5 Vdc, ID = 1.2 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.85 1.0 5.0 A A V ( (VDD = 15 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 3000 20 30 35 20 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 1.0 rDS(on) 0.080 0.134 0.100 0.190 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 5.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
345
MOTOROLA
Switching Diode
Part of the GreenLine Portfolio of devices with energyconserving traits. This switching diode has the following features: Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste Offered in four Surface Mount package types Available in 8 mm Tape and Reel in quantities of 3,000 Applications ESD Protection Reverse Polarity Protection Steering Logic MediumSpeed Switching
MMBD1000LT1
3 1 2
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM (surge) Value 30 200 500 Unit Vdc mAdc
1
MMBD2000T1
3
mA
DEVICE MARKING
MMBD1000LT1 = AY MMBD2000T1 = DH MMBD3000T1 = XP MMSD1000T1 = 4K
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Derate above 25C MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Thermal Resistance Junction to Ambient MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA C/W 556 833 TJ, Tstg 55 to +150 C
1
MMSD1000T1
2
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
346
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
347
MOTOROLA
Switching Diode
Part of the GreenLine Portfolio of devices with energyconserving traits. This switching diode has the following features: Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a nonforwardbiased condition. Offered in four Surface Mount package types Available in 8 mm Tape and Reel in quantities of 3,000 Applications ESD Protection Reverse Polarity Protection Steering Logic MediumSpeed Switching
ANODE 3 CATHODE 1 2 CATHODE
MMBD1005LT1
3 1 2
MMBD2005T1
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM (surge) Value 30 200 500 Unit Vdc mAdc mA
1 2
DEVICE MARKING
MMBD1005LT1 = A3 MMBD2005T1 = DI MMBD3005T1 = XQ MMBD3005T1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1005LT1, MMBD3005T1 MMBD2005T1 Derate above 25C MMBD1005LT1, MMBD3005T1 MMBD2005T1 Thermal Resistance Junction to Ambient MMBD1005LT1, MMBD3005T1 MMBD2005T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA 556 833 55 to +150 C Max Unit mW CASE 318D-04, STYLE 5 SC59 mW/C C/W
2 1
TJ, Tstg
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
348
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a nonforwardbiased condition.
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
349
MOTOROLA
Switching Diode
Part of the GreenLine Portfolio of devices with energyconserving traits. This switching diode has the following features: Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a nonforwardbiased condition. Offered in four Surface Mount package types Available in 8 mm Tape and Reel in quantities of 3,000 Applications ESD Protection Reverse Polarity Protection Steering Logic MediumSpeed Switching
3 CATHODE ANODE 1 2 ANODE
MMBD1010LT1
3 1 2
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM (surge) Value 30 200 500 Unit Vdc mAdc mA
MMBD2010T1
3 1 2
DEVICE MARKING
MMBD1010LT1 = A5 MMBD2010T1 = DP MMBD3010T1 = XS
MMBD3010T1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1010LT1, MMBD3010T1 MMBD2010T1 Derate above 25C MMBD1010LT1, MMBD3010T1 MMBD2010T1 Thermal Resistance Junction to Ambient MMBD1010LT1, MMBD3010T1 MMBD2010T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA 556 833 55 to +150 C Max Unit mW
2 1 3
mW/C C/W
TJ, Tstg
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
350
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a nonforwardbiased condition.
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
351
MOTOROLA
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT23 Surface Mount Package Saves Board Space
MMBF0201NLT1
Motorola Preferred Device
3 DRAIN
3 1
1 GATE 2 SOURCE
mW C C/W C
DEVICE MARKING
N1 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device MMBF0201NLT1 MMBF0201NLT3 Reel Size 7 13 Tape Width 12 mm embossed tape 12 mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
352
MMBF0201NLT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 5) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.85 0.3 0.75 V A ( (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 ) td(on) tr td(off) tf QT 2.5 2.5 15 0.8 1400 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 45 25 5.0 pF VGS(th) rDS(on) gFS 0.75 1.0 450 1.0 1.4 mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
353
MMBF0201NLT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.0 VGS = 5 V
0.8
0.8
VGS = 4 V
0.6
0.6
VGS = 10, 9, 8, 7, 6 V
0.4
0.4
0.2
0.2
VGS = 3 V
0.3
0.6
0.9
1.2
1.4
1.5
2.4 2.0
ONRESISTANCE (OHMS)
1.2
0.9
VGS = 4.5 V
1.5
1.0
0.5
20
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 25 0 25 50 75 100 125 150 ID = 250 A
TEMPERATURE (C)
354
MMBF0201NLT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.8 RDS(on) , NORMALIZED (OHMS) 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V @ 100 mA VGS = 10 V @ 300 mA C, CAPACITANCE (pF)
100
80
60 Ciss
40
20
Coss Crss
25
25
50
75
100
125
150
10
15
20
Figure 8. Capacitance
10
1.0
0.001
1.4
355
MOTOROLA
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life
MMBF0202PLT1
Motorola Preferred Device
3 DRAIN
3 1 2
1 GATE
mW C C/W C
DEVICE MARKING
P3 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device MMBF0202PLT1 MMBF0202PLT3 Reel Size 7 13 Tape Width 12 mm embossed tape 12 mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMBF0202P/D) 356 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MMBF0202PLT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V, ID = 200 mA) (VDD = 15 Vdc, RL = 75 , ID = 200 mAdc, mAdc VGEN = 10 V, RG = 6.0 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 2700 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 50 45 20 pF VGS(th) rDS(on) gFS 0.9 2.0 600 1.4 3.5 mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.5 0.3 0.75 V A
357
MMBF0202PLT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.0 TC = 55C I D , DRAIN CURRENT (AMPS) 0.8 125C 0.6 I D , DRAIN CURRENT (AMPS) 25C
0.6
0.4
0.4 3V 0.2
0.2
ONRESISTANCE (OHMS)
4 200 mA 3
2 VGS = 4.5 V 1 VGS = 10 V 0 0 100 200 300 ID, DRAIN CURRENT (AMPS) 400 500
2 50 mA 1
16 14 VGS(th) , NORMALIZED 12 10 8 6 590 4 2 0 0 230 690 2270 3500 ID = 200 mA 2160 VDS = 10 V VDS = 16 V
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 50 25 0 50 75 25 TEMPERATURE (C) 100 125 150 ID = 250 A
358
MMBF0202PLT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.30 1.25 RDS(on) , NORMALIZED (OHMS) 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 50 25 0 25 50 75 100 125 150 VGS = 10 V @ 200 mA VGS = 4.5 V @ 50 mA C, CAPACITANCE (pF)
140 120 100 80 60 40 20 0 0 5 10 TJ, JUNCTION TEMPERATURE (C) Crss 15 20 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) Ciss Coss
Figure 8. Capacitance
10
359
MOTOROLA
MMBF2201NT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SC70 / SOT 323 Surface Mount Package Saves Board Space
3 DRAIN
1 GATE 2 SOURCE
mW mW/C C C/W C
DEVICE MARKING
N1 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device MMBF2201NT1 MMBF2201NT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
360
MMBF2201NT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 5) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.85 0.3 0.75 V A ( (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 ) td(on) tr td(off) tf QT 2.5 2.5 15 0.8 1400 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 45 25 5.0 pF VGS(th) rDS(on) gFS 0.75 1.0 450 1.0 1.4 mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
TYPICAL CHARACTERISTICS
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 4 7 8 2 3 5 6 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9 10 VGS = 2.5 V VGS = 3 V VGS = 3.5 V RDS , ON RESISTANCE (OHMS) ID , DRAIN CURRENT (AMPS) VGS = 4 V 1.6 1.4 1.2 VGS = 4.5 V 1.0 ID = 100 mA 0.8 0.6 0.4 0.2 0 60 40 20 0 20 40 60 80 TEMPERATURE (C) 100 120 140 160 VGS = 10 V ID = 300 mA
361
MMBF2201NT1
TYPICAL CHARACTERISTICS
10 RDS , ON RESISTANCE (OHMS) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 GATE SOURCE VOLTAGE (VOLTS) 9 10 0 0.1 0.2 0.5 0.3 0.4 0.6 ID, DRAIN CURRENT (AMPS) 0.7 0.8 VGS = 4.5 V
ID = 300 mA
VGS = 10 V
2 0
1.0
45 40 VGS = 0 V F = 1 mHz
35 0.1 C, CAPACITANCE (pF) 30 25 20 15 10 5 Coss Crss 0 2 4 8 12 16 6 10 14 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 18 20 Ciss
0.01
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE DRAIN FORWARD VOLTAGE (VOLTS) 1.0
1.0 0.9 I D , DRAIN CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE SOURCE VOLTAGE (VOLTS) 4.0 4.5 55 25 150
362
MOTOROLA
MMBF2202PT1
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SC70/SOT323 Surface Mount Package Saves Board Space
3 DRAIN
1 GATE
2 SOURCE
mW mW/C C C/W C
DEVICE MARKING
P3 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device MMBF2202PT1 MMBF2202PT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
363
MMBF2202PT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V, ID = 200 mA) (VDD = 15 Vdc, RL = 75 , ID = 200 mAdc, mAdc VGEN = 10 V, RG = 6.0 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 2700 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 50 45 20 pF VGS(th) rDS(on) gFS 1.5 2.0 600 2.2 3.5 mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.5 0.3 0.75 V A
364
MMBF2202PT1
TYPICAL CHARACTERISTICS
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 40 20 0 20 40 60 80 100 120 140 160 VGS = 10 V ID = 200 mA VGS = 4.5 V ID = 50 mA
ID = 200 mA
10
TEMPERATURE (C)
365
MMBF2202PT1
6 rDS(on) , ON RESISTANCE (OHMS) 5 4 3 2 1 0 VGS = 10 V VGS = 4.5 V 1.0 0.9 I D, DRAIN CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 55 150 25
0.8 0.7 0.6 0.5 0.4 0.3 VGS = 3.5 V 0.2 0.1 VGS = 3 V VGS = 4 V VGS = 5 V
25 0.1 150
VGS = 4.5 V
0.01
0.001
0.5
1.0
1.5
2.0
2.5
10
50 45 40 C, CAPACITANCE (pF) 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 Coss Crss 16 18 20 VDS, DRAINSOURCE VOLTAGE (VOLTS) Ciss VGS = 0 V f = 1 MHz
366
MOTOROLA
MMBT1010LT1 MSD1010T1
Motorola Preferred Devices
3 1 2
3 2 1
DEVICE MARKING
MMBT1010LT1 = GLP MSD1010T1 = GLP
THERMAL CHARACTERISTICS
Rating Power Dissipation TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 250 1.8 RJA TJ Tstg 556 150 55 ~ + 150 Unit mW mW/C C/W C C BASE EMITTER COLLECTOR
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol V(BR)CEO V(BR)EBO ICBO ICEO hFE1(2) VCE(sat)(2) Condition IC = 10 mA, IB = 0 IE = 10 A, IE = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 5 V, IC = 100 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA Min 15 5.0 300 Max 0.1 100 600 0.1 0.1 0.19 1.1 Unit Vdc Vdc A A Vdc
VBE(sat)(2)
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (2) Pulse Test: Pulse Width 300 s, D.C. 2%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
367
368
Section 4
SmallSignal FieldEffect Transistors and MOSFETs
In Brief . . .
The data sheets on the following pages are designed to emphasize those FETs that by virtue of widespread industry use, ease of manufacture, and low relative cost, merit first consideration for new equipment design. CAUTION: Static electricity is a surface phenomenon which most commonly occurs when two dissimilar materials come into contact and then separate. Electro Static Discharge (ESD) damage of semiconductor components by operating personnel is quickly becoming a very prominent and significant problem. From simple bipolar designs to sensitive MOSFET structures, ESD has its unforgiving effect of degradation or destruction. Motorola believes it is important to extend any emphasizing note of cautiousness when handling and testing ANY FET product. Precautions include, but are not limited to, the implementation of static safe workstations and proper handling techniques. Additionally, it is very important to keep FET devices in their antistatic shipping containers and away from staticgenerating materials. NOTE: All SOT-23 package devices have had a T1 suffix NOTE: added to the device title.
1 2 3
3 3 1 2 2 1
6 4 1 2 1 3 2 3
3 1 2 1
41
SOT-223:
ABC D
The D represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
42
MOTOROLA
2N7000
Motorola Preferred Device
MAXIMUM RATINGS
Rating Drain Source Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 20 40 200 500 350 2.8 55 to +150 mW mW/C C Unit Vdc Vdc Vdc Vpk mAdc CASE 2904, STYLE 22 TO92 (TO226AA)
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 357 300 Unit C/W C
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125C) GateBody Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IDSS IGSSF 1.0 1.0 10 60 Vdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) DrainSource OnVoltage (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 4.5 Vdc, ID = 75 mAdc) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
VGS(th) rDS(on)
0.8
3.0
Vdc Ohm
VDS(on)
REV 3
43
2N7000
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1) (continued)
OnState Drain Current (VGS = 4.5 Vdc, VDS = 10 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) Id(on) gfs 75 100 mAdc mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 V VGS = 0, V, 0 f = 1.0 MHz) Ciss Coss Crss 60 25 5.0 pF
SWITCHING CHARACTERISTICS(1)
TurnOn Delay Time TurnOff Delay Time ( (VDD = 15 V, ID = 500 mA, Rgen = 25 ohms, RL = 25 ohms) ton toff 10 10 ns
2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 7V 6V 5V 4V 3V 9.0 10 TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V
0.6
0.4
0.2
1.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 60 20 + 20 + 60 T, TEMPERATURE (C) + 100 + 140 VGS = 10 V ID = 200 mA
1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 60 20 + 20 + 60 T, TEMPERATURE (C) + 100 + 140 VDS = VGS ID = 1.0 mA
44
MOTOROLA
2N7002LT1
Motorola Preferred Device
2 SOURCE
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) Drain Current Continuous TC = 25C(1) Drain Current Continuous TC = 100C(1) Drain Current Pulsed(2) GateSource Voltage Continuous Nonrepetitive (tp 50 s) Symbol VDSS VDGR ID ID IDM VGS VGSM Value 60 60 115 75 800 20 40 Unit Vdc Vdc mAdc
1 2
Vdc Vpk
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board,(3) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(4) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RJA PD Max 225 1.8 556 300 2.4 RJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
2N7002LT1 = 702
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) GateBody Leakage Current, Forward (VGS = 20 Vdc) GateBody Leakage Current, Reverse (VGS = 20 Vdc) 1. 2. 3. 4. TJ = 25C TJ = 125C V(BR)DSS IDSS IGSSF IGSSR 60 1.0 500 100 100 Vdc Adc nAdc nAdc
The Power Dissipation of the package may result in a lower continuous drain current. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. FR5 = 1.0 x 0.75 x 0.062 in. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
45
2N7002LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(2)
Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) OnState Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) Static DrainSource OnState Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Static DrainSource OnState Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25C TC = 125C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25C TC = 125C Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mAdc) VGS(th) ID(on) VDS(on) rDS(on) gFS 80 7.5 13.5 7.5 13.5 mmhos 3.75 0.375 Ohms 1.0 500 2.5 Vdc mA Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss 50 25 5.0 pF pF pF
SWITCHING CHARACTERISTICS(2)
TurnOn Delay Time TurnOff Delay Time ( (VDD = 25 Vdc, ID 500 mAdc, RG = 25 , RL = 50 )
td(on) td(off)
30 40
ns ns
46
2N7002LT1
2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAN SOURCE VOLTAGE (VOLTS) 7V 6V 5V 4V 3V 9.0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 0.8 1.0 VDS = 10 V 55C 125C 25C
0.6
0.4
0.2
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 60 20 + 20 + 60 T, TEMPERATURE (C) + 100 + 140 VGS = 10 V ID = 200 mA
1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 60 20 + 20 + 60 T, TEMPERATURE (C) + 100 + 140 VDS = VGS ID = 1.0 mA
47
MOTOROLA
TMOS Switching
NChannel Enhancement
2 GATE
1 DRAIN
BS107 BS107A
3 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 20 30 250 500 350 55 to 150 mW C Unit Vdc Vdc Vpk mAdc
1 2 3
OFF CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 130 Vdc, VGS = 0) DrainSource Breakdown Voltage (VGS = 0, ID = 100 Adc) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IDSS V(BR)DSX IGSS VGS(Th) rDS(on) 4.5 4.8 28 14 6.0 6.4 200 0.01 30 10 nAdc Vdc nAdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Static DrainSource On Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) 1.0 3.0 Vdc Ohms
SWITCHING CHARACTERISTICS
TurnOn Time TurnOff Time ton toff 6.0 12 15 15 ns ns
1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
REV 1
48
BS107 BS107A
RESISTIVE SWITCHING
+25 V 23 PULSE GENERATOR Vin 40 pF 50 50 1M 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout ton 90% toff 90% 10% 90% 50% 10% PULSE WIDTH 50%
5.0 250 mA C, CAPACITANCE (pF) VGS = 10 V 2.0 1.0 100 mA 0.5 0.2 0.1 55
160 140 120 100 80 60 40 20 35 85 105 45 15 +5.0 25 65 TJ, JUNCTION TEMPERATURE (C) 125 145 0 0 Crss Coss 40 10 20 30 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 50 Ciss
0.8 ID(on) , DRAIN CURRENT (AMPS) VGS = 10 V 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1.0 5.0 6.0 7.0 8.0 2.0 3.0 4.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 I D(on) , DRAIN CURRENT (AMPS) 0.7
0.7 10 V 0.6 0.5 0.4 0.3 0.2 0.1 0 2.0 10 4.0 6.0 8.0 12 14 16 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 3.0 V 18 20 4.0 V 5.0 V
49
BS107 BS107A
0.7 ID(on), DRAIN CURRENT (AMPS) 0.6 0.5 0.4 0.3 0.2 0.1 1.0 2.0 3.0 4.0 3.0 V 5.0 4.0 V 10 V 5.0 V
410
MOTOROLA
BS170
2 GATE 3 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current(1) Total Device Dissipation @ TA = 25C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID PD TJ, Tstg
OFF CHARACTERISTICS
Gate Reverse Current (VGS = 15 Vdc, VDS = 0) DrainSource Breakdown Voltage (VGS = 0, ID = 100 Adc) IGSS V(BR)DSS 60 0.01 90 10 nAdc Vdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DrainSource On Resistance (VGS = 10 Vdc, ID = 200 mAdc) Drain Cutoff Current (VDS = 25 Vdc, VGS = 0 Vdc) Forward Transconductance (VDS = 10 Vdc, ID = 250 mAdc) VGS(Th) rDS(on) ID(off) gfs 0.8 2.0 1.8 200 3.0 5.0 0.5 Vdc A mmhos
SWITCHING CHARACTERISTICS
TurnOn Time (ID = 0.2 Adc) See Figure 1 TurnOff Time (ID = 0.2 Adc) See Figure 1 ton toff 4.0 4.0 10 10 ns ns
1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
REV 1
411
BS170
RESISTIVE SWITCHING
+25 V ton 125 40 pF 50 1.0 M 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout OUTPUT V INVERTED out 10% INPUT (Vin Amplititude 10 Volts) Vin PULSE WIDTH toff
2.0 VGS(th), THRESHOLD VOLTAGE I D(on) , DRAIN CURRENT (AMPS) VDS = VGS ID = 1.0 mA
2.0 VGS = 10 V 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 5.0 V 0.4 4.0 V
1.6
1.2
0.8
0.8
0.4 0 50
150
4.0
100 VGS = 0 V
1.6
80
1.2 7.0 V 0.8 6.0 V 0.4 5.0 V 4.0 V 0 20 10 30 VDS, DRAIN TOSOURCE VOLTAGE (VOLTS) 40
60
412
MOTOROLA
BSS84LT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the Greenline Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Reduced power loss conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, load switching, power management in portable and batterypowered products such as computers, printers, cellular and cordless telephones. 1 Energy Efficient
GATE
3 DRAIN
3 1 2
DEVICE MARKING
BSS84LT1 = PD
ORDERING INFORMATION
Device BSS84LT1 BSS84LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
413
BSS84LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) GateSource Threaded Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 5.0 Vdc, ID = 100 mAdc) Transfer Admittance (VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 2.5 0.130 0.520 V A ( (VDD = 15 Vdc, ID = 2.5 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 30 10 5.0 pF VGS(th) rDS(on) |yfs| 0.8 50 5.0 2.0 10 Vdc Ohms mS V(BR)DSS IDSS IGSS 0.1 15 60 60 Adc 50 Vdc Adc Symbol Min Typ Max Unit
0.15 0.1
414
BSS84LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 9 VGS = 4.5 V 8 7 6 5 4 3 2 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AMPS) 55C 25C 150C RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 0 0.1 0.2 0.3 0.4 0.5 0.6 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
2 1.8 1.6 1.4 1.2 1 0.8 0.6 55 VGS = 4.5 V ID = 0.13 A VGS = 10 V ID = 0.52 A
45
95
145
0.1
TJ = 150C
25C
55C
0.01
0.001
0.5
1.0
1.5
2.0
2.5
3.0
415
MOTOROLA
BSS123LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Symbol VDSS VGS VGSM ID IDM
3 1 2
Unit Vdc Vdc Vpk Adc CASE 318 08, STYLE 21 SOT 23 (TO 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(3) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
BSS123LT1 = SA
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 250 Adc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 100 Vdc) TJ = 25C TJ = 125C GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 15 60 50 nAdc 100 Vdc Adc
ON CHARACTERISTICS(4)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 100 mAdc) 1. 2. 3. 4. VGS(th) rDS(on) gfs 0.8 80 5.0 2.8 6.0 Vdc mmhos
The Power Dissipation of the package may result in a lower continuous drain current. Pulse Width 300 ms, Duty Cycle 2.0%. FR 5 = 1.0 0.75 0.062 in. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
v
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
416
BSS123LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss 20 9.0 4.0 pF pF pF
SWITCHING CHARACTERISTICS(4)
TurnOn Delay Time TurnOff Delay Time ( (VCC = 30 Vdc, IC = 0.28 Adc, VGS = 10 Vdc, RGS = 50 ) td(on) td(off) 20 40 ns ns
REVERSE DIODE
Diode Forward OnVoltage (ID = 0.34 Adc, VGS = 0 Vdc) 4. Pulse Test: Pulse Width VSD 1.3 V
2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAN SOURCE VOLTAGE (VOLTS) 7V 6V 5V 4V 3V 9.0 10 TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V
VDS = 10 V 0.8
55C 125C
25C
0.6
0.4
0.2
1.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 60 20 + 20 + 60 T, TEMPERATURE (C) + 100 + 140 VGS = 10 V ID = 200 mA
1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 60 20 + 20 + 60 T, TEMPERATURE (C) + 100 + 140 VDS = VGS ID = 1.0 mA
417
MOTOROLA
BSS138LT1
Motorola Preferred Device
3 1 2
2 SOURCE
DEVICE MARKING
BSS138LT1 = J1
ORDERING INFORMATION
Device BSS138LT1 BSS138LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
418
BSS138LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) GateSource Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) GateSource Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = 40C to +85C) (VGS = 5.0 Vdc, ID = 200 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time TurnOff Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) Vdc 0 2 Adc ) td(on) td(off) 20 20 ns (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss 40 12 3.5 50 25 5.0 pF VGS(th) rDS(on) gfs 100 5.6 10 3.5 mmhos 0.5 1.5 Vdc Ohms V(BR)DSS IDSS IGSS 0.1 0.5 0.1 Adc 50 Vdc Adc Symbol Min Typ Max Unit
(1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature.
419
BSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.8 TJ = 25C 0.7 I D , DRAIN CURRENT (AMPS) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 VGS = 3.25 V VGS = 3.0 V VGS = 2.75 V VGS = 2.5 V I D , DRAIN CURRENT (AMPS) VGS = 3.5 V 0.9 0.8 0.7 150C 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) VGS, GATETOSOURCE VOLTAGE (VOLTS) VDS = 10 V 55C 25C
ID = 1.0 mA
0.875
20
45
70
95
120
145
4 ID = 200 mA 2
0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC)
420
BSS138LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 10 9 8 150C 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 2.5 V RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 8 VGS = 2.75 V 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) 25C 150C
55C
VGS = 10 V 4 3.5 3 2.5 2 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35
150C
25C
55C
0.4
0.45
0.5
120 100
0.1
TJ = 150C
25C
55C 80 60 Ciss
0.01
40 20 Coss Crss 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 5 10 15 20 25 VSD, DIODE FORWARD VOLTAGE (VOLTS)
0.001
421
MOTOROLA
MGSF1N02LT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dcdc converters and power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT23 Surface Mount Package Saves Board Space
3 DRAIN
1 2 3
1 GATE 2 SOURCE
ORDERING INFORMATION
Device MGSF1N02LT1 MGSF1N02LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
422
MGSF1N02LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 6) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.8 0.6 0.75 V A ( (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 125 120 45 pF VGS(th) rDS(on) 0.075 0.115 0.090 0.130 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
1.5
TJ = 150C
423
MGSF1N02LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 0.2 150C 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ID, DRAIN CURRENT (AMPS) 55C VGS = 4.5 V 25C 0.14 0.13 0.12 0.11 0.1 0.09 0.08 0.07 0.06 0.05 0.04 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 55 5 45 95 145 VGS = 4.5 V ID = 1 A VGS = 10 V ID = 2 A
10 VDS = 16 V TJ = 25C 8
4 ID = 2.0 A
2 0 0 1000 2000
3000
4000
5000
6000
0.1
0.01
0.001 0 0.2 0.4 0.6 0.8 1 VSD, DIODE FORWARD VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
TJ = 150C
25C
55C
10
10
15
20
Figure 8. Capacitance
424
MOTOROLA
MGSF1N03LT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dcdc converters and power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT23 Surface Mount Package Saves Board Space
3 DRAIN
1 2
ORDERING INFORMATION
Device MGSF1N03LT1 MGSF1N03LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
425
MGSF1N03LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 6) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.8 0.6 0.75 V A ( (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 140 100 40 pF VGS(th) rDS(on) 0.08 0.125 0.10 0.145 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 30 Vdc Adc Symbol Min Typ Max Unit
1.5 55C TJ = 150C 0.5 25C 0 1 1.5 2 2.5 3 VGS, GATETOSOURCE VOLTAGE (VOLTS) 3.5
1.5
3.25 V
426
MGSF1N03LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS R DS(on) , DRAINTOSOURCE RESISTANCE (OHMS 0.24 150C 0.16 0.14 0.12 0.1 0.08 55C 0.06 0.04 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 ID, DRAIN CURRENT (AMPS) VGS = 10 V 150C
0.19
0.14
25C
55C 0.09
0.04 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 ID, DRAIN CURRENT (AMPS)
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 55 25 0 25 50 75 100 125 150 VGS = 10 V ID = 2 A VGS = 4.5 V ID = 1 A
10 VDS = 24 V TJ = 25C 8
4 ID = 2.0 A
2 0 0 1000 2000
3000
4000
5000
6000
0.1
TJ = 150C
25C
55C
0.01
Ciss
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Figure 8. Capacitance
427
MOTOROLA
MGSF1P02ELT1
Preliminary Information
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dcdc converters and power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life
3 DRAIN
1 2
2 SOURCE
ORDERING INFORMATION
Device MGSF1P02ELT1 MGSF1P02ELT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
428
MGSF1P02ELT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 0.75 Adc) (VGS = 2.5 Vdc, ID = 0.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 6) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.5 0.6 0.75 V A ( (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 130 120 60 pF VGS(th) rDS(on) 0.20 0.32 0.26 0.50 0.7 0.85 1.2 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
429
MOTOROLA
MGSF1P02LT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in space sensitive power management circuitry. Typical applications are dcdc converters and power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life
3 DRAIN
1 2
2 SOURCE
ORDERING INFORMATION
Device MGSF1P02LT1 MGSF1P02LT3 Reel Size 7 13 Tape Width 8mm embossed tape 8mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
430
MGSF1P02LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.5 Adc) (VGS = 4.5 Vdc, ID = 0.75 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 6) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.5 0.6 0.75 V A ( (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 6000 pC ns (VDS = 5.0 Vdc) (VDS = 5.0 Vdc) (VDG = 5.0 Vdc) Ciss Coss Crss 130 120 60 pF VGS(th) rDS(on) 0.235 0.375 0.350 0.500 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
3.25 V
25C
0.25 0
3.5
10
431
MGSF1P02LT1
RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) RDS(on) , DRAINTOSOURCE RESISTANCE (OHMS) 0.55 0.4 0.38 0.36 0.34 0.32 0.3 0.28 0.26 0.24 0.22 0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 ID, DRAIN CURRENT (AMPS) 55C 25C VGS = 10 V 150C
0.45 25C 0.4 55C 0.35 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID, DRAIN CURRENT (AMPS)
1.25 1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 55 5 45 95 145 VGS = 4.5 V ID = .75 A VGS = 10 V ID = 1.5 A
10 VDS = 16 V TJ = 25C 8
0.1
0.01
0.001
C, CAPACITANCE (pF)
TJ = 150C
25C
55C
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
10
10
Figure 8. Capacitance
432
MOTOROLA
Preliminary Information
MGSF3441VT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
1 2 5 6 DRAIN
D D G
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
3 GATE SOURCE 4
5 sec
ORDERING INFORMATION
Device MGSF3441VT1 MGSF3441VT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
433
MGSF3441VT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 3.3 A) (VGS = 2.5 Vdc, ID = 2.9 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.80 1.0 20 1.2 A A V ( (VDD = 15 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 27 17 52 45 3000 50 30 80 70 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 0.45 rDS(on) 0.078 0.110 0.090 0.135 Ohms Vdc V(BR)DSS 20 IDSS IGSS 1.0 4.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
434
MGSF3441VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 VGS = 4.5 V 16 ID, DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 3.0 V 12 2.5 V 8.0 2.0 V 4.0 1.5 V 0 0 1.0 2.0 3.0 4.0 5.0 VDS, DRAINTOSOURCE VOLTAGE (V) 0 0 1.0 2.0 3.0 4.0 VGS, GATETOSOURCE VOLTAGE (V) 4.0 V 3.5 V 16 25C 12 20 TC = 55C 125C
8.0
4.0
1400 1200
0.24 C, CAPACITANCE (pF) VGS = 2.5 V 0.18 1000 800 600 400 Coss 200 0 0 4.0 8.0 12 16 20 ID, DRAIN CURRENT (A) 0 0 4.0 8.0 12 16 20 VDS, DRAINTOSOURCE VOLTAGE (V) Crss Ciss
0.12
VGS = 4.5 V
0.06
Figure 4. Capacitance
4.0
VDS = 10 V ID = 3.3 A
1.8 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V ID = 3.3 A
3.0
2.0
1.0 0 0 2.0 4.0 6.0 8.0 10 Qg, TOTAL GATE CHARGE (nC)
25
25
50
75
100
125
150
435
MGSF3441VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 TJ = 150C R DS(on) , ONRESISTANCE ( W ) IS , SOURCE CURRENT (A) 10 TJ = 25C 0.24 0.30 ID = 3.3 A
0.18
0.12
0.06 0
1.0 0 0.25 0.50 0.75 1.00 1.25 1.50 VSD, SOURCETODRAIN VOLTAGE (V)
2.0
4.0
6.0
8.0
20
12
ID = 250 mA
8.0
4.0 0 25 0 25 50 75 100 125 0.01 0.1 1.0 TIME (sec) 10 TJ, TEMPERATURE (C)
2.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1.0 DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1.0 10 30 t1 NOTES: PDM 1. DUTY CYCLE, D = t1/t2 2. PER UNIT BASE = 2. RthJA = 62.5C/W 3. TJM TA = PDMZthJA(t) 4. SURFACE MOUNTED
SINGLE PULSE
t2
436
MOTOROLA
Preliminary Information
MGSF3441XT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
ORDERING INFORMATION
Device MGSF3441XT1 MGSF3441XT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
437
MGSF3441XT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 1.5 A) (VGS = 2.5 Vdc, ID = 1.2 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.80 1.0 20 1.2 A A V ( (VDD = 15 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 27 17 52 45 3000 50 30 80 70 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 0.45 rDS(on) 0.078 0.110 0.100 0.135 Ohms Vdc V(BR)DSS 20 IDSS IGSS 1.0 4.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
438
MOTOROLA
Preliminary Information
MGSF3442VT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
5 sec
ORDERING INFORMATION
Device MGSF3442VT1 MGSF3442VT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
439
MGSF3442VT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 4.0 A) (VGS = 2.5 Vdc, ID = 3.4 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 8.0 24 36 10 20 40 60 20 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 0.6 rDS(on) 0.058 0.072 0.070 0.095 Ohms Vdc V(BR)DSS 20 IDSS IGSS 1.0 5.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
440
MGSF3442VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 VGS = 4.5 V 4.0 V 3.5 V 3.0 V 2.5 V 16 ID , DRAIN CURRENT (A) 20 TC = 55C 125C 25C
12 2.0 V 8.0
12
8.0
4.0 1.5 V 0 0 1.0 2.0 3.0 4.0 5.0 VDS, DRAINTOSOURCE VOLTAGE (V)
4.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS, GATETOSOURCE VOLTAGE (V)
0.14 R DS(on) , ONRESISTANCE ( W) 0.12 VGS = 2.5 V C, CAPACITANCE (pF) 0.10 0.08 0.06 0.04 0.02 0 0 4.0 8.0 12 16 20 ID, DRAIN CURRENT (A)
1200 1000 800 600 400 200 0 0 4.0 8.0 12 16 20 VDS, DRAINTOSOURCE VOLTAGE (V) Ciss
VGS = 4.5 V
Coss Crss
Figure 4. Capacitance
1.8 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V ID = 4.0 A
4.0
3.0
2.0
1.0 0 0 2.0 4.0 6.0 8.0 Qg, TOTAL GATE CHARGE (nC)
25
25
50
75
100
125
150
441
MGSF3442VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 TJ = 150C R DS(on) , ONRESISTANCE ( W) IS , SOURCE CURRENT (A) TJ = 25C 10 0.16 0.20 ID = 4.0 A
0.12
0.08
0.04 0
1.0 0 0.25 0.50 0.75 1.00 1.25 1.50 VSD, SOURCETODRAIN VOLTAGE (V)
2.0
4.0
6.0
8.0
0.2 0.1 V GS(th) , VARIANCE (V) 0 0.1 0.2 0.3 0.4 50 ID = 250 mA
20
12
8.0
4.0 0 25 0 25 50 75 100 125 0.01 0.1 1.0 TIME (sec) 10 TJ, TEMPERATURE (C)
2.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE 1.0 DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1.0 10 30 t1 NOTES: PDM 1. DUTY CYCLE, D = t1/t2 2. PER UNIT BASE = 2. RthJA = 62.5C/W 3. TJM TA = PDMZthJA(t) 4. SURFACE MOUNTED
SINGLE PULSE
t2
442
MOTOROLA
Preliminary Information
MGSF3442XT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
ORDERING INFORMATION
Device MGSF3442XT1 MGSF3442XT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
443
MGSF3442XT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 8.0 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 4.5 Vdc, ID = 1.7 A) (VGS = 2.5 Vdc, ID = 1.3 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 8.0 24 36 10 20 40 60 20 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 0.6 rDS(on) 0.058 0.072 0.070 0.095 Ohms Vdc V(BR)DSS 20 IDSS IGSS 1.0 5.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
444
MOTOROLA
Preliminary Information
MGSF3454VT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
5 sec
ORDERING INFORMATION
Device MGSF3454VT1 MGSF3454VT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
445
MGSF3454VT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 4.2 A) (VGS = 4.5 Vdc, ID = 3.4 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 20 30 35 20 15 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 1.0 rDS(on) 0.05 0.07 0.065 0.095 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 25 100 nAdc Adc Vdc Symbol Min Typ Max Unit
446
MGSF3454VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 VGS = 10, 9, 8, 7, 6V I D , DRAIN CURRENT (A) 16 5V I D , DRAIN CURRENT (A) 16 20 TJ = 55C 25C
12 4V
12
125C
4 3V 0 0 1 2 3 4
0.16 C, CAPACITANCE (pF) 400 320 240 160 80 0 0 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 0 Crss 6 12 Coss
0.08
18
24
30
Figure 4. Capacitance
10 VGS, GATETOSOURCE VOLTAGE (V) RDS(on) , ONRESISTANCE (OHMS) (NORMALIZED) VDS = 15 V ID = 4.2 A
1.25
2 0 0 1.5 3.0 4.5 6.0 7.5 9.0 Qg, TOTAL GATE CHARGE (nC)
1.00
0.75 50
25
125
150
447
MGSF3454VT1
TYPICAL ELECTRICAL CHARACTERISTICS
40 RDS(on) , ONRESISTANCE (OHMS) I S , SOURCE CURRENT (A) 0.20
0.16
10
TJ = 150C TJ = 25C
0.12
0.08
ID = 4.2 A
0.04
1 0 0.25 0.50 0.75 1.00 1.25 1.5 1.75 VSD, SOURCETODRAIN VOLTAGE (V)
10
0.4 0.2 V GS(th) , VARIANCE (V) 0.0 0.2 0.4 0.6 0.8 50
30
18
12
25
25
50
75
100
0 0.01
0.10
10.00
0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 1.0E03 1.0E02 t1 P(pk)
0.01 1.0E04
RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 1.0E+00 1.0E+01
448
MOTOROLA
Preliminary Information
MGSF3454XT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
ORDERING INFORMATION
Device MGSF3454XT1 MGSF3454XT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
449
MGSF3454XT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.75 A) (VGS = 4.5 Vdc, ID = 1.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 10 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 15 nC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 345 215 140 pF VGS(th) 1.0 rDS(on) 0.05 0.07 0.065 0.095 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 25 100 nAdc Adc Vdc Symbol Min Typ Max Unit
450
MGSF3454XT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.16 R DS(on) , ONRESISTANCE (W) 0.14 0.12 VGS = 4.5 V 0.10 0.08 55C 0.06 0.04 0 0.5 1.0 1.5 2.0 2.5 3.0 ID, DRAIN CURRENT (AMPS) 10 0 4.0 8.0 12 16 20 24 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) 25C TJ = 150C C, CAPACITANCE (pF) 1000
100
Figure 4. Capacitance
1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 55 5.0 45 95 145 TJ, JUNCTION TEMPERATURE (C) ID = 1.5 A VGS = 4.5 V
8.0
6.0
4.0
2.0 0 0 2.0 4.0 6.0 8.0 10 QG, TOTAL GATE CHARGE (nC)
1.6 R DS(on) , ONRESISTANCE (NORMALIZED) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 55 5.0 45 95 145 TJ, JUNCTION TEMPERATURE (C) IS, SOURCE CURRENT (AMPS) ID = 6.4 A VGS = 10 V
10
1.0
TJ = 150C
25C 55C
0.1
0.01
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCETODRAIN VOLTAGE (VOLTS)
451
MGSF3454XT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.5 R DS(on) , ONRESISTANCE (W) 2.0 1.8 0.4 1.6 0.3 V GS(th) (VOLTS) 1.4 1.2 1.0 0.8 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 VGS, GATETOSOURCE VOLTAGE (VOLTS) 0.6 50 25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) ID = 250 mA
20
16 POWER (WATTS)
12
8.0
1.0 NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE DUTY CYCLE = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1.0 10 100 1.0 k SQUARE WAVE PULSE DURATION (sec) P(pk) RJA(t) = r(t) RJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TA = P(pk) RJA(t)
t1
452
MOTOROLA
Preliminary Information
MGSF3455VT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
5 sec
ORDERING INFORMATION
Device MGSF3455VT1 MGSF3455VT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
453
MGSF3455VT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 3.5 A) (VGS = 4.5 Vdc, ID = 2.5 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.0 5.0 1.2 A A V ( (VDD = 15 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 3000 20 30 35 20 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 1.0 rDS(on) 0.080 0.134 0.100 0.190 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 5.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
454
MGSF3455VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 VGS = 10, 9, 8, 7 V I D , DRAIN CURRENT (A) 16 5V 12 6V I D , DRAIN CURRENT (A) 16 20 TJ = 55C 25C 125C 12
4V
4 3V 0 0 1 2 3 4
0.24 C, CAPACITANCE (pF) 420 340 260 180 100 0 20 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 0 Crss
Coss
0.06
12
18
24
30
Figure 4. Capacitance
10 VGS, GATETOSOURCE VOLTAGE (V) RDS(on) , ONRESISTANCE (OHMS) (NORMALIZED) VDS = 15 V ID = 3.5 A
25
125
150
455
MGSF3455VT1
TYPICAL ELECTRICAL CHARACTERISTICS
20 RDS(on) , ONRESISTANCE (OHMS) 0.40
10 TJ = 150C
0.32
0.24
TJ = 25C
0.16
ID = 3.5 A
0.08 0
1 0 0.25 0.50 0.75 1.00 1.25 1.5 1.75 VSD, SOURCETODRAIN VOLTAGE (V)
10
0.60 0.45 V GS(th) , VARIANCE (V) 0.30 0.15 0.0 0.15 0.3 50 ID = 250 A
30
18
12
6 0 0.01
25
0.10
10.00
0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 1.0E03 1.0E02 t1 P(pk)
0.01 1.0E04
RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TC = P(pk) RJC(t) 1.0E+00 1.0E+01
456
MOTOROLA
Preliminary Information
MGSF3455XT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energy conserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
DRAIN
1 2 5 6
D D G
3 GATE SOURCE 4
Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TSOP 6 Surface Mount Package Saves Board Space Visit our Web Site at http://www.motsps.com/ospd
ORDERING INFORMATION
Device MGSF3455XT1 MGSF3455XT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. Preferred devices are Motorola recommended choices for future use and best overall value.
457
MGSF3455XT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 70C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.45 A) (VGS = 4.5 Vdc, ID = 1.2 A) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.85 1.0 5.0 A A V ( (VDD = 15 Vdc, ID = 1.0 A, VGEN = 10 V, RL = 10 ) td(on) tr td(off) tf QT 10 15 20 10 3000 20 30 35 20 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 90 50 10 pF VGS(th) 1.0 rDS(on) 0.080 0.134 0.100 0.190 Ohms Vdc V(BR)DSS 30 IDSS IGSS 1.0 5.0 100 nAdc Adc Vdc Symbol Min Typ Max Unit
458
MOTOROLA
1 GATE
DRAIN 3
MMBF170LT1
2 SOURCE
3 1 2
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 ms) Drain Current Continuous Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 20 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBF170LT1 = 6Z
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 100 mA) GateBody Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) V(BR)DSS IGSS 60 10 Vdc nAdc
ON CHARACTERISTICS (2)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 200 mA) OnState Drain Current (VDS = 25 Vdc, VGS = 0) VGS(th) rDS(on) ID(off) 0.8 3.0 5.0 0.5 Vdc
W mA
pF
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz) Ciss 60
1. FR 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle
v 2.0%.
REV 2
459
MMBF170LT1
+25 V 125 W 20 dB 50 W ATTENUATOR ton td(on) TO SAMPLING SCOPE 50 W INPUT Vout OUTPUT INVERTED Vout INPUT 50% 50 W 1 MW Vin 10% PULSE WIDTH tr 90% 10% 90% 50% td(off) 90% toff tf
PULSE GENERATOR 50 W
Vin 40 pF
2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 7V 6V 5V 4V 3V 9.0 10 TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V
0.6
0.4
0.2
1.0
2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 60 20 + 20 + 60 T, TEMPERATURE (C) + 100 + 140 VGS = 10 V ID = 200 mA
1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 60 20 + 20 + 60 T, TEMPERATURE (C) + 100 + 140 VDS = VGS ID = 1.0 mA
460
MOTOROLA
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SOT23 Surface Mount Package Saves Board Space
MMBF0201NLT1
Motorola Preferred Device
3 DRAIN
3 1
1 GATE 2 SOURCE
mW C C/W C
DEVICE MARKING
N1 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device MMBF0201NLT1 MMBF0201NLT3 Reel Size 7 13 Tape Width 12 mm embossed tape 12 mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
461
MMBF0201NLT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 5) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.85 0.3 0.75 V A ( (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 ) td(on) tr td(off) tf QT 2.5 2.5 15 0.8 1400 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 45 25 5.0 pF VGS(th) rDS(on) gFS 0.75 1.0 450 1.0 1.4 mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
462
MMBF0201NLT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.0 VGS = 5 V
0.8
0.8
VGS = 4 V
0.6
0.6
VGS = 10, 9, 8, 7, 6 V
0.4
0.4
0.2
0.2
VGS = 3 V
0.3
0.6
0.9
1.2
1.4
1.5
2.4 2.0
ONRESISTANCE (OHMS)
1.2
0.9
VGS = 4.5 V
1.5
1.0
0.5
20
1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 25 0 25 50 75 100 125 150 ID = 250 A
TEMPERATURE (C)
463
MMBF0201NLT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.8 RDS(on) , NORMALIZED (OHMS) 1.6 1.4 1.2 1.0 0.8 0.6 50 VGS = 4.5 V @ 100 mA VGS = 10 V @ 300 mA C, CAPACITANCE (pF)
100
80
60 Ciss
40
20
Coss Crss
25
25
50
75
100
125
150
10
15
20
Figure 8. Capacitance
10
1.0
0.001
1.4
464
MOTOROLA
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life
MMBF0202PLT1
Motorola Preferred Device
3 DRAIN
3 1 2
1 GATE
mW C C/W C
DEVICE MARKING
P3 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device MMBF0202PLT1 MMBF0202PLT3 Reel Size 7 13 Tape Width 12 mm embossed tape 12 mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMBF0202P/D) Motorola SmallSignal Transistors, FETs and Diodes Device Data 465
MMBF0202PLT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V, ID = 200 mA) (VDD = 15 Vdc, RL = 75 , ID = 200 mAdc, mAdc VGEN = 10 V, RG = 6.0 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 2700 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 50 45 20 pF VGS(th) rDS(on) gFS 0.9 2.0 600 1.4 3.5 mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.5 0.3 0.75 V A
466
MMBF0202PLT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.0 TC = 55C I D , DRAIN CURRENT (AMPS) 0.8 125C 0.6 I D , DRAIN CURRENT (AMPS) 25C
0.6
0.4
0.4 3V 0.2
0.2
ONRESISTANCE (OHMS)
4 200 mA 3
2 VGS = 4.5 V 1 VGS = 10 V 0 0 100 200 300 ID, DRAIN CURRENT (AMPS) 400 500
2 50 mA 1
16 14 VGS(th) , NORMALIZED 12 10 8 6 590 4 2 0 0 230 690 2270 3500 ID = 200 mA 2160 VDS = 10 V VDS = 16 V
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 50 25 0 50 75 25 TEMPERATURE (C) 100 125 150 ID = 250 A
467
MMBF0202PLT1
TYPICAL ELECTRICAL CHARACTERISTICS
1.30 1.25 RDS(on) , NORMALIZED (OHMS) 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 50 25 0 25 50 75 100 125 150 VGS = 10 V @ 200 mA VGS = 4.5 V @ 50 mA C, CAPACITANCE (pF)
140 120 100 80 60 40 20 0 0 5 10 TJ, JUNCTION TEMPERATURE (C) Crss 15 20 VDS, DRAINTOSOURCE VOLTAGE (VOLTS) Ciss Coss
Figure 8. Capacitance
10
468
MOTOROLA
MMBF2201NT1
Motorola Preferred Device
Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SC70 / SOT 323 Surface Mount Package Saves Board Space
3 DRAIN
1 GATE 2 SOURCE
mW mW/C C C/W C
DEVICE MARKING
N1 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device MMBF2201NT1 MMBF2201NT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
469
MMBF2201NT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 300 mAdc) (VGS = 4.5 Vdc, ID = 100 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 5) SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 0.85 0.3 0.75 V A ( (VDD = 15 Vdc, ID = 300 mAdc, RL = 50 ) td(on) tr td(off) tf QT 2.5 2.5 15 0.8 1400 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 45 25 5.0 pF VGS(th) rDS(on) gFS 0.75 1.0 450 1.0 1.4 mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
TYPICAL CHARACTERISTICS
1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 4 7 8 2 3 5 6 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 9 10 VGS = 2.5 V VGS = 3 V VGS = 3.5 V RDS , ON RESISTANCE (OHMS) ID , DRAIN CURRENT (AMPS) VGS = 4 V 1.6 1.4 1.2 VGS = 4.5 V 1.0 ID = 100 mA 0.8 0.6 0.4 0.2 0 60 40 20 0 20 40 60 80 TEMPERATURE (C) 100 120 140 160 VGS = 10 V ID = 300 mA
470
MMBF2201NT1
TYPICAL CHARACTERISTICS
10 RDS , ON RESISTANCE (OHMS) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 8 GATE SOURCE VOLTAGE (VOLTS) 9 10 0 0.1 0.2 0.5 0.3 0.4 0.6 ID, DRAIN CURRENT (AMPS) 0.7 0.8 VGS = 4.5 V
ID = 300 mA
VGS = 10 V
2 0
1.0
45 40 VGS = 0 V F = 1 mHz
35 0.1 C, CAPACITANCE (pF) 30 25 20 15 10 5 Coss Crss 0 2 4 8 12 16 6 10 14 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 18 20 Ciss
0.01
0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE DRAIN FORWARD VOLTAGE (VOLTS) 1.0
1.0 0.9 I D , DRAIN CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE SOURCE VOLTAGE (VOLTS) 4.0 4.5 55 25 150
471
MOTOROLA
MMBF2202PT1
Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
Part of the GreenLine Portfolio of devices with energyconserving traits. These miniature surface mount MOSFETs utilize Motorolas High Cell Density, HDTMOS process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in small power management circuitry. Typical applications are dcdc converters, power management in portable and batterypowered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) Provides Higher Efficiency and Extends Battery Life Miniature SC70/SOT323 Surface Mount Package Saves Board Space
3 DRAIN
1 GATE
2 SOURCE
mW mW/C C C/W C
DEVICE MARKING
P3 (1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device MMBF2202PT1 MMBF2202PT3 Reel Size 7 13 Tape Width 8 mm embossed tape 8 mm embossed tape Quantity 3000 10,000
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
472
MMBF2202PT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS DraintoSource Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 16 Vdc, VGS = 0 Vdc) (VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125C) GateBody Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time Gate Charge (See Figure 5) (VDS = 16 V, VGS = 10 V, ID = 200 mA) (VDD = 15 Vdc, RL = 75 , ID = 200 mAdc, mAdc VGEN = 10 V, RG = 6.0 ) td(on) tr td(off) tf QT 2.5 1.0 16 8.0 2700 pC ns (VDS = 5.0 V) (VDS = 5.0 V) (VDG = 5.0 V) Ciss Coss Crss 50 45 20 pF VGS(th) rDS(on) gFS 1.5 2.0 600 2.2 3.5 mMhos 1.0 1.7 2.4 Vdc Ohms V(BR)DSS IDSS IGSS 1.0 10 100 nAdc 20 Vdc Adc Symbol Min Typ Max Unit
SOURCEDRAIN DIODE CHARACTERISTICS Continuous Current Pulsed Current Forward Voltage(2) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. IS ISM VSD 1.5 0.3 0.75 V A
473
MMBF2202PT1
TYPICAL CHARACTERISTICS
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 40 20 0 20 40 60 80 100 120 140 160 VGS = 10 V ID = 200 mA VGS = 4.5 V ID = 50 mA
ID = 200 mA
10
TEMPERATURE (C)
474
MMBF2202PT1
6 rDS(on) , ON RESISTANCE (OHMS) 5 4 3 2 1 0 VGS = 10 V VGS = 4.5 V 1.0 0.9 I D, DRAIN CURRENT (AMPS) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 55 150 25
0.8 0.7 0.6 0.5 0.4 0.3 VGS = 3.5 V 0.2 0.1 VGS = 3 V VGS = 4 V VGS = 5 V
25 0.1 150
VGS = 4.5 V
0.01
0.001
0.5
1.0
1.5
2.0
2.5
10
50 45 40 C, CAPACITANCE (pF) 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 Coss Crss 16 18 20 VDS, DRAINSOURCE VOLTAGE (VOLTS) Ciss VGS = 0 V f = 1 MHz
475
MOTOROLA
MMFT107T1
Motorola Preferred Device
MEDIUM POWER TMOS FET 250 mA, 200 VOLTS RDS(on) = 14 OHM MAX
4 1
2 3
DEVICE MARKING
FT107
THERMAL CHARACTERISTICS
Thermal Resistance JunctiontoAmbient Maximum Temperature for Soldering Purposes Time in Solder Bath RJA TL 156 260 10 C/W C Sec
1. Device mounted on FR4 glass epoxy printed circuit using minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
476
MMFT107T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (VGS = 0, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 130 V, VGS = 0) GateBody Leakage Current Reverse (VGS = 15 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 200 30 10 Vdc nAdc nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 200 mA) DraintoSource OnVoltage (VGS = 10 V, ID = 200 mA) Forward Transconductance (VDS = 25 V, ID = 250 mA) VGS(th) RDS(on) VDS(on) gfs 1.0 300 3.0 14 2.8 Vdc Ohms Vdc mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 V VGS = 0, V, 0 f = 1.0 MHz) Ciss Coss Crss 60 30 6.0 pF
1.5
6V 4V
5V
300
1 3V
200
0.5
100
TJ = 125C 55C 0
25C
477
MMFT107T1
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) , DRAINSOURCE RESISTANCE (NORMALIZED)
10 VGS = 10 V 8 TJ = 125C
10 ID = 1 A VGS = 10 V
4 25C 2 55C 0 0 100 200 300 ID, DRAIN CURRENT (AMPS) 400 500
0.1 75
50
125
150
150
0.1
100
TJ = 125C 0.01
25C
50
0.3 0.6 0.9 1.2 1.5 VSD, SOURCEDRAIN DIODE FORWARD VOLTAGE (VOLTS)
30
10 gFS, TRANSCONDUCTANCE (mhos) 9 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 Qg, TOTAL GATE CHARGE (nC) 4 4.5 5 160 V VDS = 100 V ID = 200 mA
2 VDS = 10 V 1.5
100
400
500
Figure 8. Transconductance
478
MOTOROLA
MMFT960T1
Motorola Preferred Device
MEDIUM POWER TMOS FET 300 mA 60 VOLTS RDS(on) = 1.7 OHM MAX
4 1
2 3
DEVICE MARKING
FT960
THERMAL CHARACTERISTICS
Thermal Resistance JunctiontoAmbient Maximum Temperature for Soldering Purposes Time in Solder Bath RJA TL 156 260 10 C/W C Sec
1. Device mounted on a FR4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
479
MMFT960T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (VGS = 0, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 60 V, VGS = 0) GateBody Leakage Current (VGS = 15 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 60 10 50 Vdc Adc nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.0 A) DraintoSource OnVoltage (VGS = 10 V, ID = 0.5 A) (VGS = 10 V, ID = 1.0 A) Forward Transconductance (VDS = 25 V, ID = 0.5 A) VGS(th) RDS(on) VDS(on) gfs 600 0.8 1.7 mmhos 1.0 3.5 1.7 Vdc Ohms Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Transfer Capacitance Total Gate Charge GateSource Charge GateDrain Charge 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (VGS = 10 V, ID = 1.0 A, V 10A VDS = 48 V) (VDS = 25 V VGS = 0, V, 0 f = 1.0 MHz) Ciss Coss Crss Qg Qgs Qgd 65 33 7.0 3.2 1.2 2.0 nC pF
480
MMFT960T1
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) , DRAINSOURCE RESISTANCE (NORMALIZED)
5 VGS = 10 V 4
10 ID = 1 A VGS = 10 V
3 TJ = 125C 2 25C 1 55C 0 0 0.5 1 1.5 2 ID, DRAIN CURRENT (AMPS) 2.5
0.1 75
50
125
150
250 225 I D, DRAIN CURRENT (AMPS) 200 C, CAPACITANCE (pF) 1 175 150 125 100 75 50 25 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCEDRAIN DIODE FORWARD VOLTAGE (VOLTS) 0 0 5 Crss 10 15 20 25 VDS, DRAINSOURCE VOLTAGE (VOLTS) 30 Coss Ciss VGS = 0 V f = 1 MHz TJ = 25C
TJ = 125C 0.1
TJ = 25C
10 ID = 1 A TJ = 25C gFS , TRANSCONDUCTANCE (mhos) 9 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 Qg, TOTAL GATE CHARGE (nC) 3.5 4 VDS = 30 V VDS = 48 V
2 VDS = 10 V 1.5
0.5
2.5
Figure 8. Transconductance
481
MOTOROLA
MMFT2406T1
Motorola Preferred Device
MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS(on) = 6.0 OHM
4 1
2 3
G S
DEVICE MARKING
T2406
THERMAL CHARACTERISTICS
Thermal Resistance JunctiontoAmbient (surface mounted)(1) Lead Temperature for Soldering Purposes, 1/16 from case Time in Solder Bath RJA TL 83.3 260 10 C/W C Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
482
MMFT2406T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (VGS = 0, ID = 100 A) Zero Gate Voltage Drain Current (VDS = 120 V, VGS = 0) GateBody Leakage Current (VGS = 15 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 240 10 100 Vdc Adc nAdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 2.5 Vdc, ID = 0.1 Adc) (VGS = 10 Vdc, ID = 0.5 Adc) DraintoSource OnVoltage (VGS = 10 V, ID = 0.5 A) Forward Transconductance (VDS = 6.0 V, ID = 0.5 A) VGS(th) RDS(on) VDS(on) gFS 300 10 6.0 3.0 Vdc mmhos 0.8 2.0 Vdc Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Transfer Capacitance 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (VDS = 25 V VGS = 0, V, 0 f = 1.0 MHz) Ciss Coss Crss 125 50 20 pF
483
MOTOROLA
MMFT6661T1
Motorola Preferred Device
MEDIUM POWER TMOS FET 500 mA 90 VOLTS RDS(on) = 4.0 OHM MAX
4 1
2 3
DEVICE MARKING
T6661
THERMAL CHARACTERISTICS
Thermal Resistance JunctiontoAmbient Maximum Temperature for Soldering Purposes Time in Solder Bath RJA TL 156 260 10 C/W C Sec
1. Device mounted on FR4 glass epoxy printed circuit board using minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
484
MMFT6661T1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (VGS = 0, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 90 V, VGS = 0) GateBody Leakage Current (VGS = 15 Vdc, VDS = 0) V(BR)DSS IDSS IGSS 90 10 100 Vdc Adc nAdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DraintoSource OnResistance (VGS = 10 Vdc, ID = 1.0 Adc) DraintoSource OnVoltage (VGS = 10 V, ID = 1.0 A) (VGS = 5.0 V, ID = 0.3 A) Forward Transconductance (VDS = 25 V, ID = 0.5 A) VGS(th) RDS(on) VDS(on) gFS 200 4.0 1.6 mmhos 0.8 2.0 4.0 Vdc Ohms Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Transfer Capacitance Total Gate Charge GateSource Charge GateDrain Charge 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% (VGS = 10 V, ID = 1.0 A, V 10A VDS = 72 V) (VDS = 25 V VGS = 0, V, 0 f = 1.0 MHz) Ciss Coss Crss Qg Qgs Qgd 36 16 6.0 1.7 0.34 0.23 nC pF
0.9
0.6
0.3
485
MMFT6661T1
TYPICAL ELECTRICAL CHARACTERISTICS
RDS(on) , DRAINSOURCE RESISTANCE (NORMALIZED)
7 6 VGS = 10 V TJ = 125C
10 ID = 1 A VGS = 10 V
25C 2 55C 0 0 0.3 0.6 0.9 ID, DRAIN CURRENT (AMPS) 1.2 1.5
0.1 75
50
125
150
10
80 C, CAPACITANCE (pF) 1 70 60 50 40 30 20 10 0.01 0 0.5 1 1.5 VSD, SOURCEDRAIN DIODE FORWARD VOLTAGE (VOLTS) 2 0 0 5 Crss Coss Ciss
TJ = 125C 0.1
TJ = 25C
30
1 VDS = 10 V 0.8
0.2
0.4
1.6
1.8
0.3
1.2
1.5
Figure 8. Transconductance
486
MOTOROLA
TMOS Switching
NChannel Enhancement
2 GATE
MPF910
3 DRAIN
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25C Derate above 25C MPF910 Total Device Dissipation @ TC = 25C Derate above 25C MFE910 Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD PD TJ, Tstg Value 60 20 40 0.5 1.0 1.0 8.0 6.25 50 65 to +150 Unit Vdc Vdc Vpk Adc Watts mW/C Watts mW/C C
1 2 3
OFF CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 40 V, VGS = 0) Gate Reverse Current (VGS = 10 V, VDS = 0) DrainSource Breakdown Voltage (VGS = 0, ID = 100 A) IDSS IGSS V(BR)DSS 60 0.1 0.01 90 10 10 Adc nAdc Vdc
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) DrainSource OnVoltage (VGS = 10 V, ID = 500 mA) OnState Drain Current (VDS = 25 V, VGS = 10 V) Forward Transconductance (VDS = 15 V, ID = 500 mA) VGS(th) VDS(on) ID(on) gfs 0.3 500 100 1.5 2.5 2.5 Vdc Vdc mA mmhos
1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
REV 1
487
MPF910
RESISTIVE SWITCHING
+25 V 23
Pulse Generator To Sampling Scope 50 Input
Vin 40 pF 50 1.0 M
20 dB 50 Attenuator
Vout
50
ton 90% Output Vout Inverted 50% Input Vin 10% Pulse Width
10 v
150 (C)
4.0
488
MPF910
2.0 I D(on), DRAIN CURRENT (AMPS) 1.6 1.2
7.0 V VGS = 10 V
100 80 60 40
Ciss VGS = 10 V
8.0 V
0.8 0.4
C, CAPACITANCE (pF)
9.0 V
20
Coss Crss
40
10 5.0
VGS = 10 V
1.0 0.5 0.4 0.3 0.2 0.1 50 30 10 10 30 50 70 90 110 130 150 TJ, JUNCTION TEMPERATURE
489
MOTOROLA
TMOS Switching
NChannel Enhancement
2 GATE
3 DRAIN
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Thermal Resistance Symbol VDS VDG VGS VGSM ID IDM PD 1.0 8.0 TJ, Tstg JA 55 to 150 125 Watts mW/C C C/W MPF930 35 35 MPF960 60 60 20 40 2.0 3.0 MPF990 90 90 Unit Vdc Vdc Vdc Vpk Adc
1 2 3
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 10 Adc) V(BR)DSX MPF930 MPF960 MPF990 IGSS 35 60 90 50 nAdc Vdc
ON CHARACTERISTICS(2)
ZeroGateVoltage Drain Current (VDS = Maximum Rating, VGS = 0) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) DrainSource OnVoltage (VGS = 10 Vdc) (ID = 0.5 Adc) MPF930 MPF960 MPF990 MPF930 MPF960 MPF990 MPF930 MPF960 MPF990 IDSS VGS(Th) VDS(on) 0.4 0.6 0.6 0.9 1.2 1.2 2.2 2.8 2.8 0.7 0.8 1.2 1.4 1.7 2.4 3.0 3.5 4.8 1.0 10 3.5 Adc Vdc Vdc
1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
REV 2
490
ON CHARACTERISTICS(2) (Continued)
Static DrainSource On Resistance (VGS = 10 Vdc, ID = 1.0 Adc) rDS(on) MPF930 MPF960 MPF990 ID(on) 1.0 0.9 1.2 1.2 2.0 1.4 1.7 2.0 Amps
SWITCHING CHARACTERISTICS
TurnOn Time TurnOff Time 2. Pulse Test: Pulse Width ton 7.0 7.0 15 15 ns ns toff
RESISTIVE SWITCHING
+25 V 23 PULSE GENERATOR Vin 40 pF 50 50 1.0 M 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout ton 90% toff 90% 10% 90% 10 V INPUT Vin 50% 10% PULSE WIDTH 50%
491
2.4 ID(on), DRAIN CURRENT (AMPS) ID(on), DRAIN CURRENT (AMPS) 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0 0 1.0 6.0 7.0 8.0 2.0 3.0 4.0 5.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 VDS = 10 V
2.8 VGS = 10 V 2.4 9.0 V 2.0 1.6 7.0 V 1.2 6.0 V 0.8 5.0 V 0.4 0 0 5.0 10 20 30 40 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 4.0 V 50 8.0 V
1.2 6.0 V 0.8 5.0 V 0.4 0.2 0 0.5 1.0 2.0 3.0 4.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 4.0 V 3.0 V 5.0
492
MOTOROLA
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TC = 25C Derate above 25C Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VDS VDG VGS VGSM ID IDM PD 2.5 20 PD 1.0 8.0 TJ, Tstg 55 to +150 Watts mW/C C Watts mW/C MPF6659 35 35 MPF6660 60 60 20 40 2.0 3.0 MPF6661 90 90 Unit Vdc Vdc Vdc Vpk Adc
1 2 3
OFF CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = Maximum Rating, VGS = 0) GateBody Leakage Current (VGS = 15 Vdc, VDS = 0) DrainSource Breakdown Voltage (VGS = 0, ID = 10 Adc) MPF6659 MPF6660 MPF6661 IDSS IGSS V(BR)DSX 35 60 90 10 100 Adc nAdc Vdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) DrainSource OnVoltage (VGS = 10 Vdc, ID = 1.0 Adc) MPF6659 MPF6660 MPF6661 MPF6659 MPF6660 MPF6661 VGS(Th) VDS(on) 0.8 0.9 0.9 1.8 3.0 4.0 1.5 1.5 1.6 0.8 1.4 2.0 Vdc Vdc
1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
REV 2
493
ON CHARACTERISTICS(2) (Continued)
Static DrainSource On Resistance (VGS = 10 Vdc, ID = 1.0 Adc) rDS(on) MPF6659 MPF6660 MPF6661 ID(on) 1.0 2.0 1.8 3.0 4.0 Amps
SWITCHING CHARACTERISTICS(2)
Rise Time Fall Time TurnOn Time TurnOff Time 2. Pulse Test: Pulse Width tr tf ton 5.0 5.0 5.0 5.0 ns ns ns ns
toff
RESISTIVE SWITCHING
+25 V 23 PULSE GENERATOR 50 Vin 40 pF 50 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout ton 90% toff 90% 10% 90% 50% INPUT Vin 10% PULSE WIDTH 50% 10 V
1.0 M
494
1.2
0.8
0.8
0.4
100
1.6
80
VGS = 0 V
1.2 7.0 V 0.8 6.0 V 0.4 5.0 V 4.0 V 0 20 10 30 VDS, DRAIN SOURCE VOLTAGE (VOLTS) 40
60
10 5.0 VGS = 10 V
30
10
130
150
495
MOTOROLA
3 DRAIN
VN0300L
Motorola Preferred Device
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Nonrepetitive (tp 50 s) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 20 40 200 500 350 2.8 Unit V V Vdc Vpk mA mA mW mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 312.5 300 Unit C/W C
STATIC CHARACTERISTICS
Drain Source Breakdown Voltage (VDS = 0, ID = 10 A) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TA = 125C) GateBody Leakage (VDS = 0, VGS = 30 V) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) OnState Drain Current(1) (VDS = VGS, ID = 1.0 mA) DrainSource On Resistance(1) (VGS = 5.0 V, ID = 0.3 A) (VGS = 10 V, ID = 1.0 A) Forward Transconductance(1) (VDS = 10 V, ID = 0.5 A) 1. Pulse Test; Pulse Width < 300 ms, Duty Cycle V(BR)DSS IDSS IGSS VGS(th) ID(on) rDS(on) gfs 200 3.3 1.2 mS 0.8 1.0 10 500 100 2.5 nA V A 30 V A
v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
496
VN0300L
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, Vd 0 f = 1.0 MHz) Ciss Coss Crss 100 95 25 pF pF pF
SWITCHING CHARACTERISTICS
TurnOn Time TurnOff Time ( (VDD = 25 Vdc, ID = 1.0 A, RL = 24 , RG = 25 ) ton toff 30 30 ns ns
497
MOTOROLA
VN0610LL
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage (RGS = 1 M) Gate Source Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 20 40 190 1000 400 3.2 55 to +150 mW mW/C C Unit Vdc Vdc Vdc Vpk mAdc
1 2 3
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 312.5 300 Unit C/W C
OFF CHARACTERISTICS
Drain Source Breakdown Voltage (VGS = 0, ID = 100 A) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125C) GateBody Leakage Current, Forward (VGSF = 30 V, VDS = 0) V(BR)DSS IDSS IGSSF 10 500 100 nAdc 60 Vdc Adc
ON CHARACTERISTICS(1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static DrainSource OnResistance (VGS = 10 V, ID = 500 mA) (VGS = 10 V, ID = 500 mA, TC = 125C) DrainSource OnVoltage (VGS = 5.0 V, ID = 200 mA) (VGS = 10 V, ID = 500 mA) OnState Drain Current (VGS = 10 V, VDS 2.0 VDS(on)) Forward Transconductance (VDS 2.0 VDS(on), ID = 500 mA) 1. Pulse Test: Pulse Width VGS(th) rDS(on) VDS(on) ID(on) gfs 750 100 1.5 2.5 mAdc mhos 5.0 9.0 Vdc 0.8 2.5 Vdc
REV 1
498
VN0610LL
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, Vd 0 f = 1.0 MHz) Ciss Coss Crss 60 25 5.0 pF
SWITCHING CHARACTERISTICS(1)
TurnOn Delay Time TurnOff Delay Time 1. Pulse Test: Pulse Width ( (VDD = 15 Vdc, ID = 600 mA, Rgen = 25 , RL = 23 ) ton toff 10 10 ns
499
VN0610LL
RESISTIVE SWITCHING
+25 V ton 125 40 pF 50 1.0 M 20 dB 50 ATTENUATOR TO SAMPLING SCOPE 50 INPUT Vout OUTPUT V INVERTED out 10% INPUT (Vin Amplititude 10 Volts) Vin PULSE WIDTH toff
2.0 VGS(th), THRESHOLD VOLTAGE I D(on) , DRAIN CURRENT (AMPS) VDS = VGS ID = 1.0 mA
2.0 VGS = 10 V 1.6 9.0 V 8.0 V 1.2 7.0 V 6.0 V 5.0 V 0.4 4.0 V
1.6
1.2
0.8
0.8
0.4 0 50
150
4.0
100 VGS = 0 V
1.6
80
1.2 7.0 V 0.8 6.0 V 0.4 5.0 V 4.0 V 0 20 10 30 VDS, DRAIN TOSOURCE VOLTAGE (VOLTS) 40
60
4100
MOTOROLA
VN10LM
1 SOURCE
1 2 3
MAXIMUM RATINGS
Rating Drain Source Voltage GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Temperature Range Symbol VDSS VGS VGSM ID IDM PD TJ, Tstg Value 60 20 40 0.3 1.0 1.0 8.0 40 to +150 Unit Vdc Vdc Vpk Adc Watts mW/C C
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 100 A) ZeroGateVoltage Drain Current (VDS = 45 V, VGS = 0) GateBody Leakage Current (VGS = 15 V, VDS = 0) GateBody Leakage Current (VGS = 15 V, VDS = 0) V(BR)DSS IDSS IGSS1 IGSS2 60 0.1 10 100 100 Vdc Adc nAdc nAdc
1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width 300 s, Duty Cycle.
REV 1
4101
VN10LM
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) OnState Drain Current (VDS = 15 V, VGS = 10 V) Forward Transconductance (VDS = 15 V, ID = 500 mA) DrainSource OnVoltage (VGS = 5.0 V, ID = 200 mA) DrainSource OnVoltage (VGS = 10 V, ID = 500 mA) DrainSource OnResistance (VGS = 5.0 V, ID = 200 mA) DrainSource OnResistance (VGS = 10 V, ID = 500 mA) Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) TurnOn Time (VDS = 15 V, RL = 23 , RG = 50 , Vin = 20 V) TurnOff Time (VDS = 15 V, RL = 23 , RG = 50 , Vin = 20 V) VGS(th) ID(on) gfs VDS(on)1 VDS(on)2 rDS(on)1 rDS(on)2 Ciss Coss Crss ton toff 0.8 750 200 2.5 1.5 2.5 7.5 5.0 60 25 5.0 10 10 Vdc mA mmhos Vdc Vdc pF pF pF ns ns
4102
MOTOROLA
VN2222LL
Motorola Preferred Device
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Continuous Nonrepetitive (tp 50 s) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 20 40 150 1000 400 3.2 55 to +150 mW mW/C C Unit Vdc Vdc Vdc Vpk mAdc CASE 2904, STYLE 22 TO92 (TO226AA)
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 312.5 300 Unit C/W C
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 100 Adc) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125C) GateBody Leakage Current, Forward (VGSF = 30 Vdc, VDS = 0) V(BR)DSS IDSS IGSSF 10 500 100 nAdc 60 Vdc Adc
ON CHARACTERISTICS(1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static DrainSource OnResistance (VGS = 10 Vdc, ID = 0.5 Adc) (VGS = 10 Vdc, ID = 0.5 Vdc, TC = 125C) 1. Pulse Test: Pulse Width VGS(th) rDS(on) 7.5 13.5 0.6 2.5 Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
4103
VN2222LL
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1) (Continued)
DrainSource OnVoltage (VGS = 5.0 Vdc, ID = 200 mAdc) (VGS = 10 Vdc, ID = 500 mAdc) OnState Drain Current (VGS = 10 Vdc, VDS 2.0 VDS(on)) Forward Transconductance (VDS = 10 Vdc, ID = 500 mAdc) VDS(on) ID(on) gfs 750 100 1.5 3.75 mA mhos Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, Vd 0 f = 1.0 MHz) Ciss Coss Crss 60 25 5.0 pF
SWITCHING CHARACTERISTICS(1)
TurnOn Delay Time TurnOff Delay Time 1. Pulse Test: Pulse Width ( (VDD = 15 Vdc, ID = 600 mA, Rgen = 25 , RL = 23 ) ton toff 10 10 ns
4104
VN2222LL
2 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 1 2 3 4 5 6 7 8 9 7V 6V 5V 4V 3V 10 0 1 2 3 4 5 6 7 8 9 10 VDS, DRAIN SOURCE VOLTAGE (VOLTS) VGS, GATE SOURCE VOLTAGE (VOLTS) TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 0.8 VDS = 10 V 55C 125C 1 25C
0.6 0.4
0.2
2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 60 20 +20 +60 T, TEMPERATURE (C) +100 +140 VGS = 10 V ID = 200 mA
1.2 1.15 1.1 1.05 1 0.95 0.9 0.85 0.8 0.75 0.7 60 20 0 +20 +60 T, TEMPERATURE (C) +100 +140 VDS = VGS ID = 1 mA
4105
MOTOROLA
3 DRAIN
VN2406L
Motorola Preferred Device
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Nonrepetitive (tp 50 s) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 240 60 20 40 200 500 350 2.8 Unit Vdc Vdc Vdc Vpk mAdc mAdc mW mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 312.5 300 Unit C/W C
STATIC CHARACTERISTICS
Drain Source Breakdown Voltage (VGS = 0, ID = 100 A) Zero Gate Voltage Drain Current (VDS = 120 Vdc, VGS = 0) (VDS = 120 Vdc, VGS = 0, TA = 125C) Gate Body Leakage (VDS = 0, VGS = 15 V) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) OnState Drain Current(1) (VGS = 10 V, VDS 2.0 VDS(on)) DrainSource On Resistance(1) (VGS = 2.5 V, ID = 0.1 A) (VGS = 10 V, ID = 0.5 A) Forward Transconductance(1) (VDS = 10 V, ID = 0.5 A) 1. Pulse Test; Pulse Width < 300 s, Duty Cycle V(BR)DSS IDSS IGSS VGS(th) ID(on) rDS(on) gfs 300 10 6.0 mS 0.8 1.0 10 500 100 2.0 nAdc Vdc Adc 240 Vdc Adc
v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
4106
VN2406L
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, Vd 0 f = 1.0 MHz) Ciss Coss Crss 125 50 20 pF pF pF
SWITCHING CHARACTERISTICS
TurnOn Time (VDD = 60 Vdc, ID = 0.4 A, Vd 04A RL = 150 , RG = 25 ) TurnOff Time t(on) t(r) t(off) t(f) 8.0 8.0 23 34 ns ns ns ns
4107
MOTOROLA
3 DRAIN
VN2410L
1 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Continuous Nonrepetitive (tp 50 s) Continuous Drain Current Pulsed Drain Current Power Dissipation @ TC = 25C Derate above 25C Operating and Storage Temperature Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 240 60 20 40 200 500 350 2.8 Unit Vdc Vdc Vdc Vpk mAdc mAdc mW mW/C C
1 2 3
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16 from case for 10 seconds Symbol RJA TL Max 312.5 300 Unit C/W C
STATIC CHARACTERISTICS
Drain Source Breakdown Voltage (VGS = 0, ID = 100 A) Zero Gate Voltage Drain Current (VDS = 120 Vdc, VGS = 0) (VDS = 120 Vdc, VGS = 0, TA = 125C) Gate Body Leakage (VDS = 0, VGS = 15 V) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) OnState Drain Current(1) (VGS = 10 V, VDS 2.0 VDS(on)) DrainSource On Resistance(1) (VGS = 2.5 V, ID = 0.1 A) (VGS = 10 V, ID = 0.5 A) Forward Transconductance(1) (VDS = 10 V, ID = 0.5 A) 1. Pulse Test; Pulse Width < 300 s, Duty Cycle V(BR)DSS IDSS IGSS VGS(th) ID(on) rDS(on) gfs 300 10 10 mS 0.8 1.0 10 500 100 2.0 nAdc Vdc Adc 240 Vdc Adc
v 2.0%.
REV 1
4108
VN2410L
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, Vd 0 f = 1.0 MHz) Ciss Coss Crss 125 50 20 pF pF pF
SWITCHING CHARACTERISTICS
TurnOn Time (VDD = 60 Vdc, ID = 0.4 A, Vd 04A RL = 150 , RG = 25 ) TurnOff Time t(on) t(r) t(off) t(f) 8.0 8.0 23 34 ns ns ns ns
4109
MOTOROLA
JFETs
NChannel Depletion
General Purpose
1 DRAIN 3 GATE
2N5457
*Motorola Preferred Device
2 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Reverse Gate Source Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Range Storage Channel Temperature Range Symbol VDS VDG VGSR IG PD TJ Tstg Value 25 25 25 10 310 2.82 125 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C C C
1 2 3
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Source Voltage (VDS = 15 Vdc, ID = 100 mAdc) V(BR)GSS IGSS VGS(off) VGS 0.5 2.5 1.0 200 6.0 Vdc Vdc 25 Vdc nAdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (1) (VDS = 15 Vdc, VGS = 0) IDSS 1.0 3.0 5.0 mAdc
mmhos mmhos
pF pF
Preferred devices are Motorola recommended choices for future use and best overall value.
4110
2N5457
TYPICAL CHARACTERISTICS
5 VDS = 15 V VGS = 0 RS = 1 MW
0.01
0.1
10
100
0.001
10
1.2 VGS(off) 1.0 I D , DRAIN CURRENT (mA) 0.8 0.6 0.4 0.2 0
^ 1.2 V
VGS(off)
^ 1.2 V
VDS = 15 V
4111
2N5457
TYPICAL CHARACTERISTICS
5 VGS(off) 4
^ 3.5 V
^ 3.5 V
1 V
3 VDS = 15 V 2
0 5
10
VGS(off)
^ 5.8 V
VGS = 0 V 8
VGS(off)
^ 5.8 V
6 VDS = 15 V 4
0 7
Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS.
4112
MOTOROLA
JFET Amplifiers
PChannel Depletion
3 GATE
2 DRAIN
1 SOURCE
MAXIMUM RATINGS
Rating Drain Gate Voltage Reverse Gate Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Range Storage Channel Temperature Range Symbol VDG VGSR IG(f) PD TJ Tstg Value 40 40 10 350 2.8 65 to +135 65 to +150 Unit Vdc Vdc mAdc mW mW/C C C
1 2 3
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 30 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) (VGS = 30 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc) Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) (VDS = 15 Vdc, ID = 0.2 mAdc) (VDS = 15 Vdc, ID = 0.4 mAdc) V(BR)GSS 2N5460, 2N5461, 2N5462 IGSS 2N5460, 2N5461, 2N5462 2N5460, 2N5461, 2N5462 2N5460 2N5461 2N5462 2N5460 2N5461 2N5462 VGS(off) 0.75 1.0 1.8 0.5 0.8 1.5 5.0 1.0 6.0 7.5 9.0 4.0 4.5 6.0 nAdc Adc Vdc 40 Vdc
VGS
Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) 2N5460 2N5461 2N5462 IDSS 1.0 2.0 4.0 5.0 9.0 16 mAdc
mmhos
Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
mmhos
pF pF
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz) Equivalent ShortCircuit Input Noise Voltage (VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz) 1.0 60 2.5 115 dB
nV
Hz
4113
1000 700 500 300 200 0.2 0.3 0.5 0.7 1.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 2.0 3.0 4.0
10 9.0 I D, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATESOURCE VOLTAGE (VOLTS) 3.5 4.0 TA = 55C 25C 125C VDS = 15 V
1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 VDS = 15 V f = 1.0 kHz 7.0
16 14 I D, DRAIN CURRENT (mA) 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATESOURCE VOLTAGE (VOLTS) 7.0 8.0 TA = 55C 25C 125C VDS = 15 V
1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 5.0 7.0 10
4114
10 9.0 NF, NOISE FIGURE (dB) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VDS = 15 V VGS = 0 f = 100 Hz
4.0
3.0
2.0
1.0
0 10
20 30 50
10,000
0 1.0
10,000
COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz yis = j Ciss yos = j Cosp * + 1/ross yfs = yfs | yrs = j Crss
NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
4115
MOTOROLA
NChannel Depletion
3 GATE
1 DRAIN
2N5484 2N5486
2 SOURCE
MAXIMUM RATINGS
Rating Drain Gate Voltage Reverse Gate Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VDG VGSR ID IG(f) PD TJ, Tstg Value 25 25 30 10 350 2.8 65 to +150 Unit Vdc Vdc mAdc mAdc mW mW/C C
1 2 3
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) 2N5484 2N5486 V(BR)GSS IGSS VGS(off) 0.3 2.0 3.0 6.0 1.0 0.2 nAdc Adc Vdc 25 Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) 2N5484 2N5486 IDSS 1.0 8.0 5.0 20 mAdc
mmhos
mmhos
mmhos
mmhos
mmhos
4116
2N5484 2N5486
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 1.0 kHz) (VDS = 15 Vdc, ID = 1.0 mAdc, RG 1.0 k, f = 100 MHz) (VDS = 15 Vdc, ID = 1.0 mAdc, RG 1.0 k, f = 200 MHz) (VDS = 15 Vdc, ID = 4.0 mAdc, RG 1.0 k, f = 100 MHz) (VDS = 15 Vdc, ID = 4.0 mAdc, RG 1.0 k, f = 400 MHz) Common Source Power Gain (VDS = 15 Vdc, ID = 1.0 mAdc, f = 100 MHz) (VDS = 15 Vdc, ID = 1.0 mAdc, f = 200 MHz) (VDS = 15 Vdc, ID = 4.0 mAdc, f = 100 MHz) (VDS = 15 Vdc, ID = 4.0 mAdc, f = 400 MHz) NF 2N5484 2N5484 2N5486 2N5486 Gps 2N5484 2N5484 2N5486 2N5486 16 18 10 14 25 30 20 4.0 2.5 3.0 2.0 4.0 dB dB
POWER GAIN
24 f = 100 MHz
16
12
400 MHz Tchannel = 25C VDS = 15 Vdc VGS = 0 V 0 2.0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14
8.0 4.0
4117
2N5484 2N5486
Reference Designation NEUTRALIZING COIL INPUT TO 50 SOURCE C1 C5 Rg L3 C6 VGS COMMON VDS +15 V L1 C2 C4 CASE C7 ID = 5.0 mA C3 TO 500 LOAD C1 C2 C3 C4 C5 C6 C7 L1 L2 L3 VALUE 100 MHz 7.0 pF 1000 pF 3.0 pF 112 pF 112 pF 0.0015 F 0.0015 F 3.0 H* 0.15 H* 0.14 H* 400 MHz 1.8 pF 17 pF 1.0 pF 0.88.0 pF 0.88.0 pF 0.001 F 0.001 F 0.2 H** 0.03 H** 0.022 H**
L2
NOTE:
The noise source is a hotcold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). **L1
*L2 *L3
17 turns, (approx. depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. 41/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). 31/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE).
**L2 **L3
6 turns, (approx. depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE).
NOISE FIGURE
(Tchannel = 25C)
10 ID = 5.0 mA 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.5 6.5 VDS = 15 V VGS = 0 V
2.0 0 0
100 MHz 2.0 16 4.0 6.0 8.0 10 12 14 VDS, DRAINSOURCE VOLTAGE (VOLTS) 18 20
100 MHz
12
14
INTERMODULATION CHARACTERISTICS
+ 40 Pout , OUTPUT POWER PER TONE (dB) + 20 0 20 40 60 80 100 120 140 160 120 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 3RD ORDER INTERCEPT
+ 20
4118
2N5484 2N5486
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C)
grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS
gis @ IDSS
bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos)
10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 gos @ 0.25 IDSS gos @ IDSS bos @ IDSS and 0.25 IDSS
4119
2N5484 2N5486
COMMON SOURCE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
220
220
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
0.6
130
230
220
220
Figure 13. S22s Motorola SmallSignal Transistors, FETs and Diodes Device Data
2N5484 2N5486
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C)
grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS
big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
0.007 0.005
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
gog @ IDSS
gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
4121
2N5484 2N5486
COMMON GATE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 0.7 100 0.6 50 100 0.5 60 ID = IDSS 70 80 90 100 110 120 0.4 200 300 400 500 600 900 700 0.3 800 900 280 270 260 250 240 80 90 100 ID = IDSS 110 120 700 800 0.02 900 130 230 130 900 0.03 230 600 100 500 600 700 800 240 ID = 0.25 IDSS 0.01 0.0 280 270 260 250 ID = 0.25 IDSS 200 300 400 500 600 700 800 290 70 0.01 290 0.02 300 60 300 310 50 0.03 310 350 340 330 320 40 30 20 10 0 0.04 350 340 330 320
220
220
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
0.6
130
230
130
230
220
220
Figure 21. S22g Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
JFET Switching
NChannel Depletion
3 GATE
1 DRAIN
2N5555
2 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Forward Gate Current Total Device Dissipation @ TC = 25C Derate above 25C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IGF PD TJ Tstg Value 25 25 25 10 350 2.8 65 to +150 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C C C
1 2 3
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V) Drain Cutoff Current (VDS = 12 Vdc, VGS = 10 V, TA = 100C) V(BR)GSS IGSS ID(off) 25 1.0 10 2.0 Vdc nAdc nAdc Adc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) GateSource Forward Voltage (IG(f) = 1.0 mAdc, VDS = 0) DrainSource OnVoltage (ID = 7.0 mAdc, VGS = 0) Static DrainSource On Resistance (ID = 0.1 mAdc, VGS = 0) IDSS VGS(f) VDS(on) rDS(on) 15 1.0 1.5 150 mAdc Vdc Vdc Ohms
SWITCHING CHARACTERISTICS
TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time (VDD = 10 Vdc, ID(on) = 7.0 mAdc, ( ) VGS(on) = 0 VGS(off) = 10 Vdc) (See Figure 1) 0, 10 Vd ) (S Fi (VDD = 10 Vdc, ID(on) = 7.0 mAdc, ( ) VGS(on) = 0 VGS(off) = 10 Vdc) (See Figure 1) 0, 10 Vd ) (S Fi td(on) tr td(off) tf 5.0 5.0 15 10 ns ns ns ns
1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 3.0%.
4123
2N5555
PULSE WIDTH VDD 1.0 k 10 k PULSE GENERATOR (50 OHMS) 50 OHM COAXIAL CABLE 1.0 k 50 Rin = 50 OHMS td(on) OUTPUT INPUT PULSE RISE TIME < 1.0 ns FALL TIME < 1.0 ns NOMINAL VALUE OF ON PULSE WIDTH = 400 ns DUTY CYCLE 1.0% GENERATOR SOURCE IMPEDANCE = 50 OHMS 10% 90% tr 90% tf td(off) 10% 50 OHM COAXIAL CABLE TEKTRONIX 567 SAMPLING SCOPE INPUT 50% 10% 90% 90% 50% 10% VGS(on)
VGS(off)
POWER GAIN
24 f = 100 MHz
16
12
400 MHz Tchannel = 25C VDS = 15 Vdc VGS = 0 V 0 2.0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14
8.0 4.0
Reference Designation NEUTRALIZING COIL INPUT TO 50 SOURCE C1 C5 Rg L3 C6 VGS COMMON VDS +15 V L1 C2 C4 CASE C7 ID = 5.0 mA C3 TO 500 LOAD C1 C2 C3 C4 C5 C6 C7 L1 L2 L3
VALUE 100 MHz 7.0 pF 1000 pF 3.0 pF 112 pF 112 pF 0.0015 F 0.0015 F 3.0 H* 0.15 H* 0.14 H* 400 MHz 1.8 pF 17 pF 1.0 pF 0.88.0 pF 0.88.0 pF 0.001 F 0.001 F 0.2 H** 0.03 H** 0.022 H**
L2
NOTE:
The noise source is a hotcold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). **L1
*L2 *L3
17 turns, (approx. depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. 41/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). 31/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE).
**L2 **L3
6 turns, (approx. depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE).
4124
2N5555
NOISE FIGURE
(Tchannel = 25C)
10 ID = 5.0 mA 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.5 6.5 VDS = 15 V VGS = 0 V
2.0 0 0
100 MHz 2.0 4.0 6.0 8.0 10 12 14 16 VDS, DRAINSOURCE VOLTAGE (VOLTS) 18 20
100 MHz
12
14
INTERMODULATION CHARACTERISTICS
+ 40 Pout , OUTPUT POWER PER TONE (dB) + 20 0 20 40 60 80 100 120 140 160 120 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 3RD ORDER INTERCEPT
+ 20
4125
2N5555
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C)
grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS
gis @ IDSS
bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos)
10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 gos @ 0.25 IDSS gos @ IDSS bos @ IDSS and 0.25 IDSS
4126
2N5555
COMMON SOURCE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
220
220
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
0.6
130
230
220
220
Figure 13. S21s Motorola SmallSignal Transistors, FETs and Diodes Device Data
2N5555
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C)
grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS
big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
0.007 0.005
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
gog @ IDSS
gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
4128
2N5555
COMMON GATE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 0.7 100 0.6 50 100 0.5 60 ID = IDSS 70 80 90 100 110 120 0.4 200 300 400 500 600 900 700 0.3 800 900 280 270 260 250 240 80 90 100 ID = IDSS 110 120 700 800 0.02 900 130 230 130 900 0.03 230 600 100 500 600 700 800 240 ID = 0.25 IDSS 0.01 0.0 280 270 260 250 ID = 0.25 IDSS 200 300 400 500 600 700 800 290 70 0.01 290 0.02 300 60 300 310 50 0.03 310 350 340 330 320 40 30 20 10 0 0.04 350 340 330 320
220
220
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
0.6
130
230
130
230
220
220
Figure 21. S21g Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
JFETs Switching
NChannel Depletion
2N5640
1 DRAIN
3 GATE 2 SOURCE
1 2 3
Rating DrainSource Voltage DrainGate Voltage Reverse GateSource Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction Temperature Range Storage Temperature Range
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) Drain Cutoff Current (VDS = 15 Vdc, VGS = 6.0 Vdc) (VDS = 15 Vdc, VGS = 6.0 Vdc, TA = 100C) V(BR)GSS IGSS ID(off) 1.0 1.0 nAdc Adc 1.0 1.0 nAdc Adc 30 Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1) (VDS = 20 Vdc, VGS = 0) DrainSource OnVoltage (ID = 3.0 mAdc, VGS = 0) Static DrainSource On Resistance (ID = 1.0 mAdc, VGS = 0) 1. Pulse Test: Pulse Width IDSS VDS(on) rDS(on) 5.0 0.5 100 mAdc Vdc Ohms
REV 1
4130
2N5640
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
SMALLSIGNAL CHARACTERISTICS
Static DrainSource ON Resistance (VGS = 0, ID = 0, f = 1.0 kHz) Input Capacitance (VDS = 0, VGS = 12 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 0, VGS = 12 Vdc, f = 1.0 MHz) rds(on) Ciss Crss 100 10 4.0 Ohms pF pF
SWITCHING CHARACTERISTICS
TurnOn Delay Time Rise Time TurnOff Delay Time Fall Time VDD = 10 Vdc Vdc, VGS(on) = 0, VGS(off) = 10 Vdc, RG = 50 ID(on) = 3.0 mAdc ID(on) = 3.0 mAdc ID(on) = 3.0 mAdc ID(on) = 3.0 mAdc td(on) tr td(off) tf 8.0 10 15 30 ns ns ns ns
4131
2N5640
TYPICAL SWITCHING CHARACTERISTICS
1000 t d(on), TURNON DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD 1000 500 200 t r , RISE TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD TJ = 25C VGS(off) = 12 V
TJ = 25C VGS(off) = 12 V
1000 t d(off) , TURNOFF DELAY TIME (ns) 500 200 RK = RD t f , FALL TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 TJ = 25C VGS(off) = 12 V
1000 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD TJ = 25C VGS(off) = 12 V
NOTE 1
+VDD RD SET VDS(off) = 10 V INPUT RGEN 50 50 VGEN RK RGG VGG RT OUTPUT 50
INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0%
RGG
& RK
RD
The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (VGG). The DrainSource Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or GateDrain Capacitance (Cgd) is charged to VGG + VDS. During the turnon interval, GateSource Capacitance (C gs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (R D ) and DrainSource Resistance (rds). During the turnoff, this charge flow is reversed. Predicting turnon time is somewhat difficult as the channel resistance rds is a function of the gatesource voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turnon time is nonlinear. During turnoff, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions; 1) RK is equal to RD, which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator.
4132
2N5640
y fs, FORWARD TRANSFER ADMITTANCE (mmhos) 20 15 10 10 7.0 5.0 Tchannel = 25C VDS = 15 V C, CAPACITANCE (pF) Cgs 7.0 5.0 Cgd
1.0
20
30
50
10
30
IDSS = 10 160 mA
25 mA
50 mA
75 mA 100 mA
125 mA
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 70 40 10 20 50 80 110 Tchannel, CHANNEL TEMPERATURE (C) 140 170 ID = 1.0 mA VGS = 0
120
80 Tchannel = 25C
40
1.0
7.0
8.0
9.0 8.0
Tchannel = 25C
10 NOTE 2 The ZeroGateVoltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of GateSource Off Voltage (VGS(off) and DrainSource On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number.
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZEROGATEVOLTAGE DRAIN CURRENT (mA)
4133
MOTOROLA
JFET Amplifiers
NChannel
2 SOURCE 3 GATE
BFR30LT1 BFR31LT1
3 1
1 DRAIN
MAXIMUM RATINGS
Rating Drain Source Voltage Gate Source Voltage Symbol VDS VGS Value 25 25 Unit Vdc Vdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BFR30LT1 = M1; BFR31LT1 = M2
OFF CHARACTERISTICS
Gate Reverse Current Gate Source Cutoff Voltage Gate Source Voltage (VGS = 10 Vdc, VDS = 0) (ID = 0.5 nAdc, VDS = 10 Vdc) (ID = 1.0 mAdc, VDS = 10 Vdc) (ID = 50 mAdc, VDS = 10 Vdc) BFR30 BFR31 BFR30 BFR31 BFR30 BFR31 IGSS VGS(OFF) VGS 0.7 0.2 5.0 2.5 3.0 1.3 4.0 2.0 nAdc Vdc Vdc
1. Device mounted on FR4 glass epoxy printed circuit board using the recommended footprint. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
4134
BFR30LT1 BFR31LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (VDS = 10 Vdc, VGS = 0) BFR30 BFR31 IDSS 4.0 1.0 10 5.0 mAdc
mAdc
(ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 1.0 mAdc, VDS = 10 Vdc, f = 1.0 MHz) (ID = 200 mAdc, VDS = 10 Vdc, f = 1.0 MHz)
4135
BFR30LT1 BFR31LT1
TYPICAL CHARACTERISTICS
5 VDS = 15 V VGS = 0 RS = 1 MW
0.01
0.1
10
100
0.001
10
1.2 VGS(off) 1.0 I D , DRAIN CURRENT (mA) 0.8 0.6 0.4 0.2 0
^ 1.2 V
VGS(off)
^ 1.2 V
VDS = 15 V
4136
BFR30LT1 BFR31LT1
TYPICAL CHARACTERISTICS
5 VGS(off) 4
^ 3.5 V
^ 3.5 V
1 V
3 VDS = 15 V 2
0 5
10
VGS(off)
^ 5.8 V
VGS = 0 V 8
VGS(off)
^ 5.8 V
6 VDS = 15 V 4
0 7
Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS.
4137
MOTOROLA
J112
2 SOURCE
MAXIMUM RATINGS
Rating Drain Gate Voltage Gate Source Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value 35 35 50 350 2.8 300 65 to +150 Unit Vdc Vdc mAdc mW mW/C C C CASE 2904, STYLE 5 TO92 (TO226AA)
1 2 3
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc) Gate Reverse Current (VGS = 15 Vdc) Gate Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 Adc) DrainCutoff Current (VDS = 5.0 Vdc, VGS = 10 Vdc) V(BR)GSS IGSS VGS(off) ID(off) 35 1.0 1.0 5.0 1.0 Vdc nAdc Vdc nAdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1) (VDS = 15 Vdc) Static DrainSource On Resistance (VDS = 0.1 Vdc) Drain Gate and Source Gate OnCapacitance (VDS = VGS = 0, f = 1.0 MHz) Drain Gate OffCapacitance (VGS = 10 Vdc, f = 1.0 MHz) Source Gate OffCapacitance (VGS = 10 Vdc, f = 1.0 MHz) 1. Pulse Width = 300 s, Duty Cycle = 3.0%. IDSS rDS(on) Cdg(on) + Csg(on) Cdg(off) Csg(off) 5.0 50 28 mAdc pF
5.0 5.0
pF pF
(Replaces J111/D)
4138
J112
TYPICAL SWITCHING CHARACTERISTICS
1000 t d(on), TURNON DELAY TIME (ns) 500 200 100 50 20 10 5.0 RK = 0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = RD TJ = 25C VGS(off) = 7.0 V t r , RISE TIME (ns) 1000 500 200 100 50 20 10 5.0 RK = 0 RK = RD TJ = 25C VGS(off) = 7.0 V
1000 t d(off) , TURNOFF DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) RK = 0 RK = RD
20
30
50
20
30
50
INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0%
RGG
& RK
RD
The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (VGG). The DrainSource Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or GateDrain Capacitance (Cgd) is charged to VGG + VDS. During the turnon interval, GateSource Capacitance (C gs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (R D ) and DrainSource Resistance (rds). During the turnoff, this charge flow is reversed. Predicting turnon time is somewhat difficult as the channel resistance rds is a function of the gatesource voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turnon time is nonlinear. During turnoff, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions; 1) RK is equal to RD, which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator.
4139
J112
y fs, FORWARD TRANSFER ADMITTANCE (mmhos) 20 15 10 10 7.0 5.0 Tchannel = 25C VDS = 15 V C, CAPACITANCE (pF) Cgs 7.0 5.0 Cgd
1.0
20
30
50
10
30
IDSS = 10 160 mA
25 mA
50 mA
75 mA 100 mA
125 mA
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 70 40 10 20 50 80 110 Tchannel, CHANNEL TEMPERATURE (C) 140 170 ID = 1.0 mA VGS = 0
120
80 Tchannel = 25C
40
1.0
7.0
8.0
9.0 8.0
Tchannel = 25C
10 NOTE 2 The ZeroGateVoltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of GateSource Off Voltage (VGS(off) and DrainSource On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an J112 The electrical characteristics table indicates that an J112 has an IDSS range of 25 to 75 mA. Figure 10, shows rds(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts.
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZEROGATEVOLTAGE DRAIN CURRENT (mA)
4140
MOTOROLA
NChannel Depletion
3 GATE
J202
1 DRAIN
2 SOURCE
1 2 3
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Storage Temperature Range Symbol VDS VDG VGS IG PD Tstg Value 40 40 40 50 310 2.82 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C C
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc) Gate Reverse Current (VGS = 20 Vdc) Gate Source Cutoff Voltage (VDS = 20 Vdc, ID = 10 nAdc) V(BR)GSS IGSS VGS(off) 40 0.8 100 4.0 Vdc pA Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1) (VDS = 20 Vdc) IDSS 0.9 4.5 mAdc
mmhos
v 2.0 ms.
REV 1
4141
J202
TYPICAL CHARACTERISTICS
5 VDS = 15 V VGS = 0 RS = 1 MW
0.01
0.1
10
100
0.001
10
1.2 VGS(off) 1.0 I D , DRAIN CURRENT (mA) 0.8 0.6 0.4 0.2 0
^ 1.2 V
VGS(off)
^ 1.2 V
VDS = 15 V
4142
J202
TYPICAL CHARACTERISTICS
5 VGS(off) 4
^ 3.5 V
^ 3.5 V
1 V
3 VDS = 15 V 2
0 5
10
VGS(off)
^ 5.8 V
VGS = 0 V 8
VGS(off)
^ 5.8 V
6 VDS = 15 V 4
0 7
Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS.
4143
MOTOROLA
J304
2 SOURCE
1 2 3
MAXIMUM RATINGS
Rating Drain Gate Voltage GateSource Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Lead Temperature (1/16 from Case for 10 Seconds) Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value 30 30 10 350 2.8 300 65 to +150 Unit Vdc Vdc mA mW mW/C C C
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 nAdc) V(BR)GSS IGSS VGS(off) 2.0 6.0 30 100 Vdc pA Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 5.0 15 mA
mmhos mmhos
REV 1
4144
J304
POWER GAIN
24 f = 100 MHz
16
12
400 MHz Tchannel = 25C VDS = 15 Vdc VGS = 0 V 0 2.0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14
8.0 4.0
Reference Designation NEUTRALIZING COIL INPUT TO 50 SOURCE C1 C5 Rg L3 C6 VGS COMMON VDS +15 V L1 C2 C4 CASE C7 ID = 5.0 mA C3 TO 500 LOAD C1 C2 C3 C4 C5 C6 C7 L1 L2 L3
VALUE 100 MHz 7.0 pF 1000 pF 3.0 pF 112 pF 112 pF 0.0015 F 0.0015 F 3.0 H* 0.15 H* 0.14 H* 400 MHz 1.8 pF 17 pF 1.0 pF 0.88.0 pF 0.88.0 pF 0.001 F 0.001 F 0.2 H** 0.03 H** 0.022 H**
L2
NOTE:
The noise source is a hotcold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). **L1
*L2 *L3
17 turns, (approx. depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. 41/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). 31/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE).
**L2 **L3
6 turns, (approx. depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE).
4145
J304
NOISE FIGURE
(Tchannel = 25C)
10 ID = 5.0 mA 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.5 6.5 VDS = 15 V VGS = 0 V
2.0 0 0
100 MHz 2.0 4.0 6.0 8.0 10 12 14 16 VDS, DRAINSOURCE VOLTAGE (VOLTS) 18 20
100 MHz
12
14
INTERMODULATION CHARACTERISTICS
+ 40 Pout , OUTPUT POWER PER TONE (dB) + 20 0 20 40 60 80 100 120 140 160 120 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 3RD ORDER INTERCEPT
+ 20
4146
J304
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C)
grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS
gis @ IDSS
bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos)
10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 gos @ 0.25 IDSS gos @ IDSS bos @ IDSS and 0.25 IDSS
4147
J304
COMMON SOURCE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
220
220
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
0.6
130
230
220
220
Figure 13. S22s Motorola SmallSignal Transistors, FETs and Diodes Device Data
J304
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C)
grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS
big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
0.007 0.005
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
gog @ IDSS
gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
4149
J304
COMMON GATE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 0.7 100 0.6 50 100 0.5 60 ID = IDSS 70 80 90 100 110 120 0.4 200 300 400 500 600 900 700 0.3 800 900 280 270 260 250 240 80 90 100 ID = IDSS 110 120 700 800 0.02 900 130 230 130 900 0.03 230 600 100 500 600 700 800 240 ID = 0.25 IDSS 0.01 0.0 280 270 260 250 ID = 0.25 IDSS 200 300 400 500 600 700 800 290 70 0.01 290 0.02 300 60 300 310 50 0.03 310 350 340 330 320 40 30 20 10 0 0.04 350 340 330 320
220
220
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
0.6
130
230
130
230
220
220
Figure 21. S22g Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
J308
1 DRAIN
NChannel Depletion
3 GATE
J309 J310
Motorola Preferred Devices
2 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage GateSource Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 65 to +125 65 to +150 Unit Vdc Vdc mAdc mW mW/C C C CASE 2904, STYLE 5 TO92 (TO226AA)
1 2 3
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 25C) (VGS = 15 Vdc, VDS = 0, TA = +125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) J308 J309 J310 V(BR)GSS IGSS VGS(off) 1.0 1.0 2.0 6.5 4.0 6.5 1.0 1.0 nAdc Adc Vdc 25 Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) IDSS J308 J309 J310 VGS(f) 12 12 24 60 30 60 1.0 Vdc mAdc
CommonSource Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) CommonGate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) 1. Pulse Test: Pulse Width
4151
CommonSource Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) CommonGate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
GateDrain Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz) GateSource Capacitance (VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDS = 10 Vdc, ID = 10 mAdc, f = 450 MHz) Equivalent ShortCircuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) NF en 1.5 10 dB
nV
Hz
4152
70
70
+150C 10 0 0
1.0 4.0 3.0 2.0 ID VGS, GATESOURCE VOLTAGE (VOLTS) IDSS VGS, GATESOURCE CUTOFF VOLTAGE (VOLTS)
100 k Yfs
Yfs 10 k
96
100
72 Cgs 4.0 48
1.0 k Yos
10
Cgd 1.0 0 10
24
100 0.01
1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0 0
Figure 4. CommonSource Output Admittance and Forward Transconductance versus Drain Current
4153
24
18
12
Y21 Y22
1.2
0.67 0.27
0.024 0.94
6.0
11
40 100
20
160
30
80
40
21 11
60
80
130
0 100
20 100
700
100 1000
8.0 7.0 NF, NOISE FIGURE (dB) 6.0 5.0 Gpg 4.0 NF 3.0 2.0 1.0 0 4.0 6.0 8.0 10 12 14 16 18 ID, DRAIN CURRENT (mA) 20 22 VDD = 20 V f = 450 MHz BW 10 MHz CIRCUIT IN FIGURE 1
24 21 G pg , POWER GAIN (dB) NF, NOISE FIGURE (dB) 18 15 12 9.0 6.0 3.0 0 24
7.0 26 6.0 5.0 4.0 3.0 2.0 1.0 2.0 0 50 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Gpg VDS = 10 V ID = 10 mA TA = 25C CIRCUIT IN FIGURE 1 NF 6.0 18 14 10 G pg , POWER GAIN (dB) 22
Figure 10. Noise Figure and Power Gain versus Drain Current
4154
OUTPUT RL = 50
VS
SHIELD
VD
Figure 12. 450 MHz IMD Evaluation Amplifier Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is 29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
+40 OUTPUT POWER PER TONE (dBm) +20 0 20 40 60 80 100 120 120
FUNDAMENTAL OUTPUT Example of intercept point plot use: Assume two inband signals of 20 dBm at the amplifier input. They will result in a 3rd order IMD signal at the output of 90 dBm. Also, each signal level at the output will be 11 dBm, showing an amplifier gain of 9.0 dB and an intermodulation ratio (IMR) capability of 79 dB. The gain and IMR values apply only for signal levels below comparison. 0 +20
100
4155
MOTOROLA
1 DRAIN
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage GateSource Voltage Forward Gate Current Symbol VDS VDG VGS IG(f) Value 30 30 30 50 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBF4391LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0, TA = 25C) (VGS = 15 Vdc, VDS = 0, TA = 100C) GateSource Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 ID(off) 1.0 1.0 nAdc Adc V(BR)GSS IGSS VGS(off) 4.0 2.0 0.5 10 5.0 3.0 1.0 0.20 nAdc Adc Vdc 30 Vdc
OffState Drain Current (VDS = 15 Vdc, VGS = 12 Vdc) (VDS = 15 Vdc, VGS = 12 Vdc, TA = 100C) 1. FR 5 = 1.0
4156
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 VDS(on) MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 rDS(on) MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 30 60 100 0.4 0.4 0.4 50 25 5.0 150 75 30 Vdc mAdc
DrainSource OnVoltage (ID = 12 mAdc, VGS = 0) (ID = 6.0 mAdc, VGS = 0) (ID = 3.0 mAdc, VGS = 0) Static DrainSource OnResistance (ID = 1.0 mAdc, VGS = 0)
TYPICAL CHARACTERISTICS
1000 t d(on) , TURNON DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0
RK = 0 RK = RD TJ = 25C MMBF4391 VGS(off) = 12 V MMBF4392 = 7.0 V MMBF4393 = 5.0 V
1000 500 200 t r , RISE TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0
RK = 0 RK = RD
20
30
50
2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) Figure 2. Rise Time
20
30
50
1000 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0
RK = 0 RK = RD
1000 500 t f , FALL TIME (ns) 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0
RK = RD
RK = 0
20
30
50
2.0 3.0 5.0 7.0 10 20 ID, DRAIN CURRENT (mA) Figure 4. Fall Time
30
50
4157
RK RGG 50 VGG
RT
OUTPUT
RGEN 50 VGEN
INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0%
50
The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (VGG). The DrainSource Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) of GateDrain Capacitance (Cgd) is charged to VGG + VDS. During the turnon interval, GateSource Capacitance (Cgs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and DrainSource Resistance (rDS). During the turnoff, this charge flow is reversed. Predicting turnon time is somewhat difficult as the channel resistance rDS is a function of the gatesource voltage. While Cgs discharges, VGS approaches zero and rDS decreases. Since Cgd discharges through rDS, turnon time is nonlinear. During turnoff, the situation is reversed with rDS increasing as Cgd charges. The above switching curves show two impedance conditions; 1) RK is equal to RD which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator. 15
20
MMBF4392 MMBF4391
10 C, CAPACITANCE (pF) 7.0 5.0 3.0 2.0 1.5 1.0 0.03 0.05 0.1
Cgs
10
MMBF4393
7.0 5.0 3.0 2.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50
Tchannel = 25C VDS = 15 V
Cgd
30
200
IDSS 25 mA = 10 160 mA
50 mA
75 mA 100 mA
125 mA
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 70 40 10 20 50 80 110 140 170
ID = 1.0 mA VGS = 0
120 80 40
Tchannel = 25C
1.0
2.0 3.0 5.0 4.0 6.0 7.0 VGS, GATESOURCE VOLTAGE (VOLTS)
8.0
Tchannel, CHANNEL TEMPERATURE (C) Figure 9. Effect of Temperature on DrainSource OnState Resistance
4158
80 70 60 50 40 30 20 10 0
100 90
Tchannel = 25C
10
NOTE 2 The ZeroGateVoltage Drain Current (IDSS) is the principle determinant of other JFET characteristics. Figure 10 shows the relationship of GateSource Off Voltage (VGS(off)) and DrainSource On Resistance (rDS(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rDS(on) and VGS range for an MMBF4392 The electrical characteristics table indicates that an MMBF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rDS(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts.
3.0 2.0 1.0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZEROGATE VOLTAGE DRAIN CURRENT (mA) Figure 10. Effect of IDSS on DrainSource Resistance and GateSource Voltage
4159
MOTOROLA
NChannel
3 GATE
1 DRAIN
1
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage GateSource Voltage Gate Current Symbol VDS VDG VGS IG Value 30 30 30 10 Unit Vdc Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBF4416LT1 = M6A
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 150C) Gate Source Cutoff Voltage (ID = 1.0 nAdc, VDS = 15 Vdc) Gate Source Voltage (ID = 0.5 mAdc, VDS = 15 Vdc) V(BR)GSS IGSS VGS(off) VGS 1.0 1.0 200 6.0 5.5 Vdc Vdc 30 Vdc nAdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VGS = 15 Vdc, VGS = 0) GateSource Forward Voltage (IG = 1.0 mAdc, VDS = 0) 1. FR 5 = 1.0 IDSS VGS(f) 5.0 15 1.0 mAdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
4160
MMBF4416LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDS = 15 Vdc, ID = 5.0 mAdc, Rg 1000 , f = 100 MHz) (VDS = 15 Vdc, ID = 5.0 mAdc, Rg 1000 , f = 400 MHz) Common Source Power Gain (VDS = 15 Vdc, ID = 5.0 mAdc, f = 100 MHz) (VDS = 15 Vdc, ID = 5.0 mAdc, f = 400 MHz) NF Gps 18 10 2.0 4.0 dB dB
POWER GAIN
24 f = 100 MHz
16
12
400 MHz Tchannel = 25C VDS = 15 Vdc VGS = 0 V 0 2.0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14
8.0 4.0
4161
MMBF4416LT1
Reference Designation NEUTRALIZING COIL INPUT TO 50 SOURCE C1 C5 Rg L3 C6 VGS COMMON VDS +15 V L1 C2 C4 CASE C7 ID = 5.0 mA C3 TO 500 LOAD C1 C2 C3 C4 C5 C6 C7 L1 L2 L3 VALUE 100 MHz 7.0 pF 1000 pF 3.0 pF 112 pF 112 pF 0.0015 F 0.0015 F 3.0 H* 0.15 H* 0.14 H* 400 MHz 1.8 pF 17 pF 1.0 pF 0.88.0 pF 0.88.0 pF 0.001 F 0.001 F 0.2 H** 0.03 H** 0.022 H**
L2
NOTE:
The noise source is a hotcold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). **L1
*L2 *L3
17 turns, (approx. depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. 41/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). 31/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE).
**L2 **L3
6 turns, (approx. depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE).
NOISE FIGURE
(Tchannel = 25C)
10 ID = 5.0 mA 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.5 6.5 VDS = 15 V VGS = 0 V
2.0 0 0
100 MHz 2.0 16 4.0 6.0 8.0 10 12 14 VDS, DRAINSOURCE VOLTAGE (VOLTS) 18 20
100 MHz
12
14
INTERMODULATION CHARACTERISTICS
+ 40 Pout , OUTPUT POWER PER TONE (dB) + 20 0 20 40 60 80 100 120 140 160 120 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 3RD ORDER INTERCEPT
+ 20
4162
MMBF4416LT1
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C)
grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS
gis @ IDSS
bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos)
10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 gos @ 0.25 IDSS gos @ IDSS bos @ IDSS and 0.25 IDSS
4163
MMBF4416LT1
COMMON SOURCE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
220
220
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
0.6
130
230
220
220
Figure 13. S22s Motorola SmallSignal Transistors, FETs and Diodes Device Data
MMBF4416LT1
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C)
grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS
big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
0.007 0.005
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
gog @ IDSS
gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
4165
MMBF4416LT1
COMMON GATE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 0.7 100 0.6 50 100 0.5 60 ID = IDSS 70 80 90 100 110 120 0.4 200 300 400 500 600 900 700 0.3 800 900 280 270 260 250 240 80 90 100 ID = IDSS 110 120 700 800 0.02 900 130 230 130 900 0.03 230 600 100 500 600 700 800 240 ID = 0.25 IDSS 0.01 0.0 280 270 260 250 ID = 0.25 IDSS 200 300 400 500 600 700 800 290 70 0.01 290 0.02 300 60 300 310 50 0.03 310 350 340 330 320 40 30 20 10 0 0.04 350 340 330 320
220
220
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
0.6
130
230
130
230
220
220
Figure 21. S22g Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
MMBF5457LT1
1 DRAIN
1 2
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage Reverse GateSource Voltage Gate Current Symbol VDS VDG VGS(r) IG Value 25 25 25 10 Unit Vdc Vdc Vdc mAdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBF5457LT1 = 6D
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) Gate Source Voltage (VDS = 15 Vdc, ID = 100 Adc) V(BR)GSS IGSS VGS(off) VGS 0.5 2.5 1.0 200 6.0 Vdc Vdc 25 Vdc nAdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(2) (VDS = 15 Vdc, VGS = 0) 1. FR 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%. IDSS 1.0 5.0 mAdc
4167
MMBF5457LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance(2) (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Reverse Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) 2. Pulse Test: Pulse Width 630 ms, Duty Cycle 10%. |Yfs| |yrs| Ciss Crss 1000 10 4.5 1.5 5000 50 7.0 3.0 mhos mhos pF pF
TYPICAL CHARACTERISTICS
5 VDS = 15 V VGS = 0 RS = 1 MW 14 12 NF, NOISE FIGURE (dB) 10 8 6 4 2 0 0.01 0.1 1.0 f, FREQUENCY (kHz) 10 100 0 0.001 0.01 0.1 1.0 RS, SOURCE RESISTANCE (Megohms) 10 VDS = 15 V VGS = 0 f = 1 kHz
1.2 VGS(off) 1.0 I D , DRAIN CURRENT (mA) 0.8 0.6 0.4 0.2 0
^ 1.2 V
VGS(off)
^ 1.2 V
VDS = 15 V
4168
MMBF5457LT1
TYPICAL CHARACTERISTICS
5 VGS(off) 4
^ 3.5 V
^ 3.5 V
1 V
3 VDS = 15 V 2
0 5
10
VGS(off)
^ 5.8 V
VGS = 0 V 8
VGS(off)
^ 5.8 V
6 VDS = 15 V 4
0 7
Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS.
4169
MOTOROLA
MMBF5460LT1
1 DRAIN
3 1 2
MAXIMUM RATINGS
Rating DrainGate Voltage Reverse GateSource Voltage Forward Gate Current Symbol VDG VGSR IGF Value 40 40 10 Unit Vdc Vdc mAdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBF5460LT1 = 6E
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 1.0 Adc) Gate Source Voltage (VDS = 15 Vdc, ID = 0.1 mAdc) V(BR)GSS IGSS VGS(off) VGS 0.75 0.5 5.0 1.0 6.0 4.0 nAdc Adc Vdc Vdc 40 Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 1.0 5.0 mAdc
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Equivalent ShortCircuit Input Noise Voltage (VDS = 15 Vdc, VGS = 0, RG = 1.0 M, f = 100 Hz, BW = 1.0 Hz) 1. FR 5 = 1.0 |Yfs| |yos| Ciss Crss en 1000 5.0 1.0 20 4000 75 7.0 2.0 mhos mhos pF pF nV Hz
4170
MMBF5460LT1
DRAIN CURRENT versus GATE SOURCE VOLTAGE
4.0 3.5 I D, DRAIN CURRENT (mA) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS, GATESOURCE VOLTAGE (VOLTS) 1.8 2.0 TA = 55C 25C 125C VDS = 15 V Yfs FORWARD TRANSFER ADMITTANCE (m mhos) 4000 3000 2000
1000 700 500 300 200 0.2 0.3 0.5 0.7 1.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 2.0 3.0 4.0
10 9.0 I D, DRAIN CURRENT (mA) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 0.5 1.5 2.0 2.5 3.0 1.0 VGS, GATESOURCE VOLTAGE (VOLTS) 3.5 4.0 TA = 55C 25C 125C VDS = 15 V
1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) 5.0 VDS = 15 V f = 1.0 kHz 7.0
16 14 I D, DRAIN CURRENT (mA) 12 10 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATESOURCE VOLTAGE (VOLTS) 7.0 8.0 TA = 55C 25C 125C VDS = 15 V
1000 700 500 0.5 0.7 1.0 2.0 3.0 ID, DRAIN CURRENT (mA) VDS = 15 V f = 1.0 kHz 5.0 7.0 10
4171
MMBF5460LT1
r oss , OUTPUT RESISTANCE (k ohms) 1000 700 500 300 200 IDSS = 3.0 mA 100 70 50 30 20 10 0.1 0.2 0.5 1.0 2.0 ID, DRAIN CURRENT (mA) 5.0 10 6.0 mA 10 mA 10 VDS = 15 V f = 1.0 kHz C, CAPACITANCE (pF) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0 Coss Crss 10 20 30 VDS, DRAINSOURCE VOLTAGE (VOLTS) 40 Ciss f = 1.0 MHz VGS = 0
10 9.0 NF, NOISE FIGURE (dB) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 VDS = 15 V VGS = 0 f = 100 Hz
4.0
3.0
2.0
1.0
0 10
20 30 50
10,000
0 1.0
10,000
COMMON SOURCE y PARAMETERS FOR FREQUENCIES BELOW 30 MHz yis = j Ciss yos = j Cosp * + 1/ross yfs = yfs | yrs = j Crss
NOTE: 1. Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%).
4172
MOTOROLA
JFET Transistor
NChannel
2 SOURCE 3 GATE
MMBF5484LT1
Motorola Preferred Device
1 DRAIN
3 1 2
MAXIMUM RATINGS
Rating DrainGate Voltage Reverse GateSource Voltage Forward Gate Current Continuous Device Dissipation at or Below TC = 25C Linear Derating Factor Storage Channel Temperature Range Symbol VDG VGS(r) IG(f) PD 200 2.8 Tstg 65 to +150 mW mW/C C Value 25 25 10 Unit Vdc Vdc mAdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBF5484LT1 = 6B
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 20 Vdc, VDS = 0) (VGS = 20 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) V(BR)GSS IGSS VGS(off) 0.3 1.0 0.2 3.0 nAdc Adc Vdc 25 Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 1.0 5.0 mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
4173
MMBF5484LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDS = 15 Vdc, ID = 1.0 mAdc, YG = 1.0 mmhos) (RG = 1.0 k, f = 100 MHz) (VDS = 15 Vdc, VGS = 0, YG = 1.0 mhos) (RG = 1.0 M, f = 1.0 kHz) Common Source Power Gain (VDS = 15 Vdc, ID = 1.0 mAdc, f = 100 MHz) NF Gps 16 3.0 2.5 25 dB dB
POWER GAIN
24 f = 100 MHz
16
12
400 MHz Tchannel = 25C VDS = 15 Vdc VGS = 0 V 0 2.0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14
8.0 4.0
4174
MMBF5484LT1
Reference Designation NEUTRALIZING COIL INPUT TO 50 SOURCE C1 C5 Rg L3 C6 VGS COMMON VDS +15 V L1 C2 C4 CASE C7 ID = 5.0 mA C3 TO 500 LOAD C1 C2 C3 C4 C5 C6 C7 L1 L2 L3 VALUE 100 MHz 7.0 pF 1000 pF 3.0 pF 112 pF 112 pF 0.0015 F 0.0015 F 3.0 H* 0.15 H* 0.14 H* 400 MHz 1.8 pF 17 pF 1.0 pF 0.88.0 pF 0.88.0 pF 0.001 F 0.001 F 0.2 H** 0.03 H** 0.022 H**
L2
NOTE:
The noise source is a hotcold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). **L1
*L2 *L3
17 turns, (approx. depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. 41/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). 31/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE).
**L2 **L3
6 turns, (approx. depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE).
NOISE FIGURE
(Tchannel = 25C)
10 ID = 5.0 mA 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.5 6.5 VDS = 15 V VGS = 0 V
2.0 0 0
100 MHz 2.0 16 4.0 6.0 8.0 10 12 14 VDS, DRAINSOURCE VOLTAGE (VOLTS) 18 20
100 MHz
12
14
INTERMODULATION CHARACTERISTICS
+ 40 Pout , OUTPUT POWER PER TONE (dB) + 20 0 20 40 60 80 100 120 140 160 120 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 3RD ORDER INTERCEPT
+ 20
4175
MMBF5484LT1
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C)
grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS
gis @ IDSS
bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos)
10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 gos @ 0.25 IDSS gos @ IDSS bos @ IDSS and 0.25 IDSS
4176
MMBF5484LT1
COMMON SOURCE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
220
220
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
0.6
130
230
220
220
Figure 12. S21s Motorola SmallSignal Transistors, FETs and Diodes Device Data
MMBF5484LT1
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C)
grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS
big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
0.007 0.005
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
gog @ IDSS
gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
4178
MMBF5484LT1
COMMON GATE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 0.7 100 0.6 50 100 0.5 60 ID = IDSS 70 80 90 100 110 120 0.4 200 300 400 500 600 900 700 0.3 800 900 280 270 260 250 240 80 90 100 ID = IDSS 110 120 700 800 0.02 900 130 230 130 900 0.03 230 600 100 500 600 700 800 240 ID = 0.25 IDSS 0.01 0.0 280 270 260 250 ID = 0.25 IDSS 200 300 400 500 600 700 800 290 70 0.01 290 0.02 300 60 300 310 50 0.03 310 350 340 330 320 40 30 20 10 0 0.04 350 340 330 320
220
220
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
0.6
130
230
130
230
220
220
Figure 20. S21g Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
JFET Chopper
PChannel Depletion
2 SOURCE 3 GATE 1 DRAIN
MMBFJ175LT1
Motorola Preferred Device
3 1
MAXIMUM RATINGS
Rating Drain Gate Voltage Reverse Gate Source Voltage Symbol VDG VGS(r) Value 25 25 Unit V V
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBFJ175LT1 = 6W
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (VDS = 0, ID = 1.0 A) Gate Reverse Current (VDS = 0 V, VGS = 20 V) Gate Source Cutoff Voltage (VDS = 15, ID = 10 nA) V(BR)GSS IGSS VGS(OFF) 30 3.0 1.0 6.0 V nA V
ON CHARACTERISTICS
Zero Gate Voltage Drain Current (2) (VGS = 0, VDS = 15 V) Drain Cutoff Current (VDS = 15 V, VGS = 10 V) Drain Source On Resistance (ID = 500 mA) Input Capacitance Reverse Transfer Capacitance 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle VDS = 0, VGS = 10 V f = 1.0 MHz IDSS ID(off) rDS(on) Ciss Crss 7.0 60 1.0 125 11 pF F 5.5 mA nA
v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
4180
MOTOROLA
JFET Chopper
PChannel Depletion
3 GATE
2 SOURCE
MMBFJ177LT1
1 DRAIN
3 1
MAXIMUM RATINGS
Rating DrainGate Voltage Reverse GateSource Voltage Symbol VDG VGS(r) Value 25 25 Unit Vdc Vdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBFJ177LT1 = 6Y
OFF CHARACTERISTICS
GateSource Breakdown Voltage (VDS = 0, ID = 1.0 Adc) Gate Reverse Current (VDS = 0 Vdc, VGS = 20 Vdc) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) V(BR)GSS IGSS VGS(off) 30 0.8 1.0 2.5 Vdc nAdc Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current(2) (VGS = 0, VDS = 15 Vdc) Drain Cutoff Current (VDS = 15 Vdc, VGS = 10 Vdc) Drain Source On Resistance (ID = 500 Adc) Input Capacitance Reverse Transfer Capacitance VDS = 0, VGS = 10 Vdc f = 1.0 MHz IDSS ID(off) rDS(on) Ciss Crss 1.5 20 1.0 300 11 5.5 mAdc nAdc pF
1. FR 5 = 1.0 0.75 0.062 in. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle 2%.
4181
MOTOROLA
NChannel
3 GATE
MMBFJ309LT1 MMBFJ310LT1
2 SOURCE
1 DRAIN
3 1
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBFJ309LT1 = 6U; MMBFJ310LT1 = 6T
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc) Gate Reverse Current (VGS = 15 Vdc, TA = 125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) MMBFJ309 MMBFJ310 V(BR)GSS IGSS VGS(off) 25 1.0 2.0 1.0 1.0 4.0 6.5 Vdc nAdc Adc Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 10 Vdc, VGS = 0) GateSource Forward Voltage (IG = 1.0 mAdc, VDS = 0) MMBFJ309 MMBFJ310 IDSS VGS(f) 12 24 30 60 1.0 mAdc Vdc
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Equivalent ShortCircuit Input Noise Voltage (VDS = 10 Vdc, ID = 10 mAdc, f = 100 Hz) 1. FR 5 = 1.0 |Yfs| |yos| Ciss Crss en 8.0 10 18 250 5.0 2.5 mmhos mhos pF pF nV Hz
4182
MMBFJ309LT1 MMBFJ310LT1
50 SOURCE U310 C3 L1 C5 C7 1.0 k +VDD C1 = C2 = 0.8 10 pF, JFD #MVM010W. C3 = C4 = 8.35 pF Erie #539002D. C5 = C6 = 5000 pF Erie (2443000). C7 = 1000 pF, Allen Bradley #FA5C. RFC = 0.33 H Miller #923030. L1 = One Turn #16 Cu, 1/4 I.D. (Air Core). L2P = One Turn #16 Cu, 1/4 I.D. (Air Core). L2S = One Turn #16 Cu, 1/4 I.D. (Air Core). RFC C1 C2 C4 C6 L2P L2S 50 LOAD
70
70
+150C 10 0 0
1.0 4.0 3.0 2.0 ID VGS, GATESOURCE VOLTAGE (VOLTS) IDSS VGS, GATESOURCE CUTOFF VOLTAGE (VOLTS)
100 k Yfs
Yfs 10 k
96
100
72 Cgs 4.0 48
1.0 k Yos
10
Cgd 1.0 0 10
24
100 0.01
1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0 0
Figure 4. CommonSource Output Admittance and Forward Transconductance versus Drain Current
4183
MMBFJ309LT1 MMBFJ310LT1
30 VDS = 10 V ID = 10 mA TA = 25C 3.0 |S21|, |S11| 0.85 0.45 S22 2.4 Y12 (mmhos) Y11 0.79 0.39 S21 1.8 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25C S11 0.6 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.55 0.15 100 0.61 0.21 S12 200 300 500 f, FREQUENCY (MHz) 700 1000 0.90 0.012 0.92 0.036 0.96 0.048 0.98 |S12|, |S22| 0.060 1.00
24
18
12
Y21 Y22
1.2
0.67 0.27
0.024 0.94
6.0
11
40 100
20
160
30
80
40
21 11
60
80
130
0 100
20 100
700
100 1000
8.0 7.0 NF, NOISE FIGURE (dB) 6.0 5.0 Gpg 4.0 NF 3.0 2.0 1.0 0 4.0 6.0 8.0 10 12 14 16 18 ID, DRAIN CURRENT (mA) 20 22 VDD = 20 V f = 450 MHz BW 10 MHz CIRCUIT IN FIGURE 1
24 21 G pg , POWER GAIN (dB) NF, NOISE FIGURE (dB) 18 15 12 9.0 6.0 3.0 0 24
7.0 26 6.0 5.0 4.0 3.0 2.0 1.0 2.0 0 50 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Gpg VDS = 10 V ID = 10 mA TA = 25C CIRCUIT IN FIGURE 1 NF 6.0 18 14 10 G pg , POWER GAIN (dB) 22
Figure 10. Noise Figure and Power Gain versus Drain Current
4184
MMBFJ309LT1 MMBFJ310LT1
C1 S G L1 INPUT RS = 50 C2 L2 C3 U310 D C4 L3 C5 L4 C6 BW (3 dB) 36.5 MHz ID 10 mAdc VDS 20 Vdc Device case grounded IM test tones f1 = 449.5 MHz, f2 = 450.5 MHz C1 = 110 pF Johanson Air variable trimmer. C2, C5 = 100 pF feed thru button capacitor. C3, C4, C6 = 0.56 pF Johanson Air variable trimmer. L1 = 1/8 x 1/32 x 15/8 copper bar. L2, L4 = Ferroxcube Vk200 choke. L3 = 1/8 x 1/32 x 17/8 copper bar.
OUTPUT RL = 50
VS
SHIELD
VD
Figure 12. 450 MHz IMD Evaluation Amplifier Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is 29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
+40 OUTPUT POWER PER TONE (dBm) +20 0 20 40 60 80 100 120 120
FUNDAMENTAL OUTPUT Example of intercept point plot use: Assume two inband signals of 20 dBm at the amplifier input. They will result in a 3rd order IMD signal at the output of 90 dBm. Also, each signal level at the output will be 11 dBm, showing an amplifier gain of 9.0 dB and an intermodulation ratio (IMR) capability of 79 dB. The gain and IMR values apply only for signal levels below comparison. 0 +20
100
4185
MOTOROLA
JFET Transistor
NChannel
2 SOURCE 3 GATE
MMBFU310LT1
Motorola Preferred Device
1 DRAIN
3 1 2
MAXIMUM RATINGS
Rating DrainSource Voltage GateSource Voltage Gate Current Symbol VDS VGS IG Value 25 25 10 Unit Vdc Vdc mAdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA TJ, Tstg 556 55 to +150 Unit mW mW/C C/W C
DEVICE MARKING
MMBFU310LT1 = 6C
OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate 1 Leakage Current (VGS = 15 Vdc, VDS = 0) Gate 2 Leakage Current (VGS = 15 Vdc, VDS = 0, TA = 125C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) V(BR)GSS IG1SS IG2SS VGS(off) 25 2.5 150 150 6.0 Vdc pA nAdc Vdc
ON CHARACTERISTICS
ZeroGateVoltage Drain Current (VDS = 10 Vdc, VGS = 0) GateSource Forward Voltage (IG = 10 mAdc, VDS = 0) IDSS VGS(f) 24 60 1.0 mAdc Vdc
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Output Admittance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Input Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) Reverse Transfer Capacitance (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) 1. FR 5 = 1.0 |Yfs| |yos| Ciss Crss 10 18 250 5.0 2.5 mmhos mhos pF pF
Preferred devices are Motorola recommended choices for future use and best overall value.
4186
MMBFU310LT1
50 SOURCE U310 C3 L1 C5 C7 1.0 k +VDD C1 = C2 = 0.8 10 pF, JFD #MVM010W. C3 = C4 = 8.35 pF Erie #539002D. C5 = C6 = 5000 pF Erie (2443000). C7 = 1000 pF, Allen Bradley #FA5C. RFC = 0.33 H Miller #923030. L1 = One Turn #16 Cu, 1/4 I.D. (Air Core). L2P = One Turn #16 Cu, 1/4 I.D. (Air Core). L2S = One Turn #16 Cu, 1/4 I.D. (Air Core). RFC C1 C2 C4 C6 L2P L2S 50 LOAD
70
70
+150C 10 0 0
1.0 4.0 3.0 2.0 ID VGS, GATESOURCE VOLTAGE (VOLTS) IDSS VGS, GATESOURCE CUTOFF VOLTAGE (VOLTS)
100 k Yfs
Yfs 10 k
96
100
72 Cgs 4.0 48
1.0 k Yos
10
Cgd 1.0 0 10
24
100 0.01
1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 ID, DRAIN CURRENT (mA)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0 0
Figure 4. CommonSource Output Admittance and Forward Transconductance versus Drain Current
4187
MMBFU310LT1
30 VDS = 10 V ID = 10 mA TA = 25C 3.0 |S21|, |S11| 0.85 0.45 S22 2.4 Y12 (mmhos) Y11 0.79 0.39 S21 1.8 0.73 0.33 VDS = 10 V ID = 10 mA TA = 25C S11 0.6 Y12 0 100 200 300 500 f, FREQUENCY (MHz) 700 1000 0.55 0.15 100 0.61 0.21 S12 200 300 500 f, FREQUENCY (MHz) 700 1000 0.90 0.012 0.92 0.036 0.96 0.048 0.98 |S12|, |S22| 0.060 1.00
24
18
12
Y21 Y22
1.2
0.67 0.27
0.024 0.94
6.0
11
40 100
20
160
30
80
40
21 11
60
80
130
0 100
20 100
700
100 1000
8.0 7.0 NF, NOISE FIGURE (dB) 6.0 5.0 Gpg 4.0 NF 3.0 2.0 1.0 0 4.0 6.0 8.0 10 12 14 16 18 ID, DRAIN CURRENT (mA) 20 22 VDD = 20 V f = 450 MHz BW 10 MHz CIRCUIT IN FIGURE 1
24 21 G pg , POWER GAIN (dB) NF, NOISE FIGURE (dB) 18 15 12 9.0 6.0 3.0 0 24
7.0 26 6.0 5.0 4.0 3.0 2.0 1.0 2.0 0 50 100 200 300 f, FREQUENCY (MHz) 500 700 1000 Gpg VDS = 10 V ID = 10 mA TA = 25C CIRCUIT IN FIGURE 1 NF 6.0 18 14 10 G pg , POWER GAIN (dB) 22
Figure 10. Noise Figure and Power Gain versus Drain Current
4188
MMBFU310LT1
C1 S G L1 INPUT RS = 50 C2 L2 C3 U310 D C4 L3 C5 L4 C6 BW (3 dB) 36.5 MHz ID 10 mAdc VDS 20 Vdc Device case grounded IM test tones f1 = 449.5 MHz, f2 = 450.5 MHz C1 = 110 pF Johanson Air variable trimmer. C2, C5 = 100 pF feed thru button capacitor. C3, C4, C6 = 0.56 pF Johanson Air variable trimmer. L1 = 1/8 x 1/32 x 15/8 copper bar. L2, L4 = Ferroxcube Vk200 choke. L3 = 1/8 x 1/32 x 17/8 copper bar.
OUTPUT RL = 50
VS
SHIELD
VD
Figure 12. 450 MHz IMD Evaluation Amplifier Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is 29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
+40 OUTPUT POWER PER TONE (dBm) +20 0 20 40 60 80 100 120 120
FUNDAMENTAL OUTPUT Example of intercept point plot use: Assume two inband signals of 20 dBm at the amplifier input. They will result in a 3rd order IMD signal at the output of 90 dBm. Also, each signal level at the output will be 11 dBm, showing an amplifier gain of 9.0 dB and an intermodulation ratio (IMR) capability of 79 dB. The gain and IMR values apply only for signal levels below comparison. 0 +20
100
4189
MOTOROLA
MPF102
2 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage Gate Source Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Range Storage Temperature Range Symbol VDS VDG VGS IG PD TJ Tstg Value 25 25 25 10 350 2.8 125 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C C C
1 2 3
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 10 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 2.0 nAdc) Gate Source Voltage (VDS = 15 Vdc, ID = 0.2 mAdc) V(BR)GSS IGSS VGS(off) VGS 0.5 2.0 2.0 8.0 7.5 nAdc Adc Vdc Vdc 25 Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0 Vdc) IDSS 2.0 20 mAdc
mmhos
mmhos mmhos
pF pF
4190
MPF102
POWER GAIN
24 f = 100 MHz
16
12
400 MHz Tchannel = 25C VDS = 15 Vdc VGS = 0 V 0 2.0 4.0 6.0 8.0 10 ID, DRAIN CURRENT (mA) 12 14
8.0 4.0
Reference Designation NEUTRALIZING COIL INPUT TO 50 SOURCE C1 C5 Rg L3 C6 VGS COMMON VDS +15 V L1 C2 C4 CASE C7 ID = 5.0 mA C3 TO 500 LOAD C1 C2 C3 C4 C5 C6 C7 L1 L2 L3
VALUE 100 MHz 7.0 pF 1000 pF 3.0 pF 112 pF 112 pF 0.0015 F 0.0015 F 3.0 H* 0.15 H* 0.14 H* 400 MHz 1.8 pF 17 pF 1.0 pF 0.88.0 pF 0.88.0 pF 0.001 F 0.001 F 0.2 H** 0.03 H** 0.022 H**
L2
NOTE:
The noise source is a hotcold body (AIL type 70 or equivalent) with a test receiver (AIL type 136 or equivalent). **L1
*L2 *L3
17 turns, (approx. depends upon circuit layout) AWG #28 enameled copper wire, close wound on 9/32 ceramic coil form. Tuning provided by a powdered iron slug. 41/2 turns, AWG #18 enameled copper wire, 5/16 long, 3/8 I.D. (AIR CORE). 31/2 turns, AWG #18 enameled copper wire, 1/4 long, 3/8 I.D. (AIR CORE).
**L2 **L3
6 turns, (approx. depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32 ceramic coil form. Tuning provided by an aluminum slug. 1 turn, AWG #16 enameled copper wire, 3/8 I.D. (AIR CORE). 1/2 turn, AWG #16 enameled copper wire, 1/4 I.D. (AIR CORE).
4191
MPF102
NOISE FIGURE
(Tchannel = 25C)
10 ID = 5.0 mA 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 5.5 6.5 VDS = 15 V VGS = 0 V
2.0 0 0
100 MHz 2.0 4.0 6.0 8.0 10 12 14 16 VDS, DRAINSOURCE VOLTAGE (VOLTS) 18 20
100 MHz
12
14
INTERMODULATION CHARACTERISTICS
+ 40 Pout , OUTPUT POWER PER TONE (dB) + 20 0 20 40 60 80 100 120 140 160 120 FUNDAMENTAL OUTPUT @ IDSS, 0.25 IDSS 100 3RD ORDER IMD OUTPUT @ IDSS, 0.25 IDSS VDS = 15 Vdc f1 = 399 MHz f2 = 400 MHz 3RD ORDER INTERCEPT
+ 20
4192
MPF102
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDS = 15 Vdc, Tchannel = 25C)
grs , REVERSE TRANSADMITTANCE (mmhos) brs , REVERSE SUSCEPTANCE (mmhos) 30 20 10 7.0 5.0 3.0 2.0 gis @ 0.25 IDSS 1.0 0.7 0.5 0.3 10 20 30 bis @ IDSS 5.0 3.0 2.0 brs @ IDSS 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 grs @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS
gis @ IDSS
bis @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
20 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 |bfs| @ IDSS |bfs| @ 0.25 IDSS gos, OUTPUT ADMITTANCE (mhos) bos, OUTPUT SUSCEPTANCE (mhos)
10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 gos @ 0.25 IDSS gos @ IDSS bos @ IDSS and 0.25 IDSS
4193
MPF102
COMMON SOURCE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 1.0 350 100 100 0.9 50 300 0.8 60 70 80 90 100 110 120 0.7 ID = IDSS 500 400 600 500 600 0.6 800 900 700 900 700 800 280 270 260 250 240 80 90 100 110 120 290 70 400 300 200 100 270 260 250 240 0.0 280 300 60 600 800 700 500 0.1 200 340 330 320 40 30 20 10 0 0.4 350 340 330 320
0.3 400 310 50 ID = IDSS, 0.25 IDSS 900 0.2 300 290 310
130
230
130
230
220
220
320
0.6 50 0.5 60 70 80 90 100 110 120 900 800 700 600 500 400 300 ID = IDSS 240 200 100 0.5 230 0.6 130 120 800 700 600 ID = 0.25 IDSS 500 400 300 200 100 0.4 250 110 0.3 900 0.3 280 270 260 80 90 100 0.4 300 290 60 70 310 50
310
0.6
130
230
220
220
Figure 13. S22s Motorola SmallSignal Transistors, FETs and Diodes Device Data
MPF102
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS (VDG = 15 Vdc, Tchannel = 25C)
grg , REVERSE TRANSADMITTANCE (mmhos) brg , REVERSE SUSCEPTANCE (mmhos) 20 gig, INPUT CONDUCTANCE (mmhos) big, INPUT SUSCEPTANCE (mmhos) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 10 20 30 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 gig @ IDSS, 0.25 IDSS 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 0.25 IDSS brg @ IDSS
big @ IDSS big @ 0.25 IDSS 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
0.007 0.005
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 20 30 bfg @ IDSS
1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
gog @ IDSS
gog @ 0.25 IDSS 0.01 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000 10 20 30 50 70 100 200 300 f, FREQUENCY (MHz) 500 700 1000
4195
MPF102
COMMON GATE CHARACTERISTICS
SPARAMETERS (VDS = 15 Vdc, Tchannel = 25C, Data Points in MHz)
30 40 20 10 0 0.7 100 0.6 50 100 0.5 60 ID = IDSS 70 80 90 100 110 120 0.4 200 300 400 500 600 900 700 0.3 800 900 280 270 260 250 240 80 90 100 ID = IDSS 110 120 700 800 0.02 900 130 230 130 900 0.03 230 600 100 500 600 700 800 240 ID = 0.25 IDSS 0.01 0.0 280 270 260 250 ID = 0.25 IDSS 200 300 400 500 600 700 800 290 70 0.01 290 0.02 300 60 300 310 50 0.03 310 350 340 330 320 40 30 20 10 0 0.04 350 340 330 320
220
220
30 40
20
10
0 0.5
350
340
330 320 40
30
20
10
330 320
100 0.4 50 0.3 60 70 80 0.1 90 900 100 110 120 260 250 240 100 110 120 900 270 90 0.2 ID = 0.25 IDSS 300 290 280 60 70 80 100 ID = IDSS 310 50
0.9
900 310
0.6
130
230
130
230
220
220
Figure 21. S22g Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
JFETs Switching
NChannel Depletion
3 GATE
1 DRAIN
MPF4392 MPF4393
Motorola Preferred Devices
2 SOURCE
MAXIMUM RATINGS
Rating Drain Source Voltage Drain Gate Voltage GateSource Voltage Forward Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Operating and Storage Channel Temperature Range Symbol VDS VDG VGS IG(f) PD Tchannel, Tstg Value 30 30 30 50 350 2.8 65 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C C CASE 2904, STYLE 5 TO92 (TO226AA)
1 2 3
OFF CHARACTERISTICS
Gate Source Breakdown Voltage (IG = 1.0 Adc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100C) DrainCutoff Current (VDS = 15 Vdc, VGS = 12 Vdc) (VDS = 15 Vdc, VGS = 12 Vdc, TA = 100C) Gate Source Voltage (VDS = 15 Vdc, ID = 10 nAdc) MPF4392 MPF4393 V(BR)GSS IGSS ID(off) VGS 2.0 0.5 5.0 3.0 1.0 0.1 nAdc Adc Vdc 1.0 0.2 nAdc Adc 30 Vdc
ON CHARACTERISTICS
Zero Gate Voltage Drain Current(1) (VDS = 15 Vdc, VGS = 0) DrainSource OnVoltage (ID = 6.0 mAdc, VGS = 0) (ID = 3.0 mAdc, VGS = 0) Static DrainSource On Resistance (ID = 1.0 mAdc, VGS = 0) IDSS MPF4392 MPF4393 VDS(on) MPF4392 MPF4393 rDS(on) MPF4392 MPF4393 60 100 0.4 0.4 25 5.0 75 30 Vdc mAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
4197
MPF4392 MPF4393
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
SWITCHING CHARACTERISTICS
Rise Time (See Figure 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) Fall Time (See Figure 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) TurnOn Time (See Figures 1 and 2) (ID(on) = 6.0 mAdc) (ID(on) = 3.0 mAdc) TurnOff Time (See Figures 3 and 4) (VGS(off) = 7.0 Vdc) (VGS(off) = 5.0 Vdc) tr MPF4392 MPF4393 tf MPF4392 MPF4393 ton MPF4392 MPF4393 toff MPF4392 MPF4393 20 37 35 55 4.0 6.5 15 15 ns 15 29 20 35 ns 2.0 2.5 5.0 5.0 ns ns
RK = RD
RK = 0
20
30
50
Figure 4. Fall Time Motorola SmallSignal Transistors, FETs and Diodes Device Data
MPF4392 MPF4393
VDD RD SET VDS(off) = 10 V INPUT RGEN 50 50 VGEN INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0% RK RGG VGG RT OUTPUT 50 NOTE 1 The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (VGG). The DrainSource Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or GateDrain Capacitance (Cgd) is charged to VGG + VDS. During the turnon interval, GateSource Capacitance (C gs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and DrainSource Resistance (rds). During the turnoff, this charge flow is reversed. Predicting turnon time is somewhat difficult as the channel resistance rds is a function of the gatesource voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turnon time is nonlinear. During turnoff, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions: 1) RK is equal to RD which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator.
RGG
& RK
RD = RD(RT + 50) RD + RT + 50
20
30
50
0.1
10
30
200 rds(on) , DRAINSOURCE ONSTATE RESISTANCE (OHMS) rds(on) , DRAINSOURCE ONSTATE RESISTANCE (NORMALIZED) IDSS = 10 160 mA 25 mA 50 mA 75 mA 100 mA 125 mA
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 70 40 110 10 20 50 80 Tchannel, CHANNEL TEMPERATURE (C) 140 170 ID = 1.0 mA VGS = 0
120
80
40 Tchannel = 25C 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VGS, GATESOURCE VOLTAGE (VOLTS) 7.0 8.0
Figure 8. Effect of GateSource Voltage On DrainSource Resistance Motorola SmallSignal Transistors, FETs and Diodes Device Data
MPF4392 MPF4393
100 r ds(on), DRAINSOURCE ONSTATE RESISTANCE (OHMS) 90 80 70 60 50 40 30 20 10 VGS(off) rDS(on) @ VGS = 0 Tchannel = 25C 10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 V GS , GATESOURCE VOLTAGE (VOLTS) NOTE 2 The ZeroGateVoltage Drain Current (IDSS), is the principle determinant of other JFET characteristics. Figure 10 shows the relationship of GateSource Off Voltage (VGS(off)) and DrainSource On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an MPF4392 The electrical characteristics table indicates that an MPF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rds(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts.
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZEROGATE VOLTAGE DRAIN CURRENT (mA)
4200
Section 5
SmallSignal Tuning and Switching Diodes
In Brief . . .
Packaging options include plastic DIPs and surface mount packages. Most SOT23, SC59, SC70/SOT323 and SOT223 package devices are only available in Tape and Reel. NOTE: All SOT-23 package devices have had a T1 suffix NOTE: added to the device title.
CASE 29-04 (TO-226AA)
2 3 1 2
3 3 1 2 2 1 1 2 4
3 2 1 2 1
3 2
14 1
16 1
CASE 646-06
CASE 648-08
14 1
16 1
51
SC-59:
SC-70/ SOT-323:
SOT-223:
SO-14:
SO-16:
ABC D
The D represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
52
MOTOROLA
1N5148 1N5148A
6.8 47 pF EPICAP VOLTAGEVARIABLE CAPACITANCE DIODES
VR = 4.0 Vdc, f = 1.0 MHz Min 0.43 0.43 Typ 0.45 0.45
53
1N5148 1N5148A
PARAMETER TEST METHODS
1. LS, SERIES INDUCTANCE LS is measured on a shorted package at 250 MHz using an impedance bridge (Boonton Radio Model 250A RX Meter). L = lead length. 2. CC, CASE CAPACITANCE CC is measured on an open package at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 3. CT, DIODE CAPACITANCE (C T = C C + C J ). C T is measured at 1.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 4. TR, TUNING RATIO TR is the ratio of CT measured at 4.0 Vdc divided by CT measured at 60 Vdc. 5. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q
100 70 50 C T , DIODE CAPACITANCE (pF) 30 1N5148 10 7.0 5.0 3.0
(Boonton Electronics Model 33AS8). 6. , DIODE CAPACITANCE REVERSE VOLTAGE SLOPE The diode capacitance, CT (as measured at VR = 4.0 Vdc, f = 1.0 MHz) is compared to CT (as measured at VR = 60 Vdc, f = 1.0 MHz) by the following equation which defines . log CT(4) log CT(60)
log 60 log 4
Note that a CT versus VR law is assumed as shown in the following equation where CC is included. CT
+ VKa
7. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = 65C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85C in the following equation which defines TCC: TCC
10000 7000 5000 3000 Q, FIGURE OF MERIT
+ 2pfC G
TA = 25C f = 1 MHz
1N5148
1.0 1.0
30
50 60
100
1.0
30
50 60
70 65 50
Figure 4. Normalized Figure of Merit versus Junction Temperature Motorola SmallSignal Transistors, FETs and Diodes Device Data
1N5148 1N5148A
40 I R , REVERSE CURRENT (nA) 2000
32 Q, FIGURE OF MERIT
24
16
+ 75C
30 50 f, FREQUENCY (MHz)
70
100
55
MOTOROLA
MAXIMUM RATINGS(1)
Rating Reverse Voltage Device Dissipation @ TA = 25C Derate above 25C Operating Junction Temperature Range Storage Temperature Range Symbol VR PD TJ Tstg Value 30 400 2.67 +175 65 to + 200 Unit Volts mW mW/C C C
TR, Tuning Ratio C2/C30 f = 1.0 MHz Min 2.6 2.6 2.7 Max 3.2 3.2 3.3
(Replaces 1N5441A/D)
56
+ 2pfC G
(Boonton Electronics Model 33AS8 or equivalent). 7. TCC, DIODE CAPACITANCE TEMPERATURE COEFFICIENT TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = 65C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA = +85C in the following equation, which defines TCC: TCC C + CT() 85C)) 65T(65C) 85 106 CT(25C)
1.046 NORMALIZED DIODE CAPACITANCE 1.036 1.026 1.016 1.006 VR = 30 Vdc 0.996 0.986 0.976 0.966 75 50 25 0 +25 +50 TJ, TEMPERATURE (C) +75 +100 +125 VR = 2.0 Vdc VR = 4.0 Vdc
57
200 250
375
425
500
58
MOTOROLA
Switching Diode
ANODE 3 CATHODE 2
BAL99LT1
MAXIMUM RATINGS
3
Symbol VR IF
Value 70 100
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAL99LT1 = JF
OFF CHARACTERISTICS
Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) Reverse Breakdown Voltage (IR = 100 Adc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Recovery Current (IF = 10 mAdc, VR = 5.0 Vdc, RL = 500 ) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , measured at IR = 1.0 mAdc) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 IR V(BR) VF QS CD trr VFR 715 855 1000 1250 45 1.5 6.0 1.75 pC pF ns Vdc 70 2.5 30 50 Vdc mV Adc
59
BAL99LT1
TYPICAL CHARACTERISTICS
100 10 TA = 150C IF, FORWARD CURRENT (mA) I R, REVERSE CURRENT ( A) 1.0 TA = 125C
0.1
TA = 85C
1.0
0.1 0.2
0.4
0.6
0.8
1.0
1.2
0.001
10
20
30
40
50
0.64
0.60
0.56
0.52
Figure 3. Capacitance
510
MOTOROLA
Switching Diode
3 CATHODE 1 ANODE
BAS16LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 200 500 Unit Vdc mAdc mAdc
1 2 3
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
DEVICE MARKING
BAS16LT1 = A6
OFF CHARACTERISTICS
Reverse Voltage Leakage Current (VR = 75 Vdc) (VR = 75 Vdc, TJ = 150C) (VR = 25 Vdc, TJ = 150C) Reverse Breakdown Voltage (IBR = 100 Adc) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 ) Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 ) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 IR V(BR) VF CD VFR trr QS 715 855 1000 1250 2.0 1.75 6.0 45 pF Vdc ns pC 75 1.0 50 30 Vdc mV Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
511
BAS16LT1
820 +10 V 2.0 k 100 H 0.1 F D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
10 TA = 40C
0.1
TA = 85C
1.0
TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.64
0.60
0.56
0.52
Figure 4. Capacitance
512
MOTOROLA
BAS16WT1
Motorola Preferred Device
TJ, Tstg
55 to +150
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol RJA Max 0.625 Unit C/mW
DEVICE MARKING
BAS16WT1 = A6
Symbol VF
Min
Unit mV
pF ns PC V
REV 1
513
BAS16WT1
1 ns MAX t 10% tif trr 50 DUTY CYCLE = 2% 90% VF 100 ns Irr 500 DUT
OSCILLOSCOPE R 10 M C 7 pF VC 20 ns MAX t 10% VCM VCM D1 243 pF 100 K 500 DUT BAW62
+ Qa C
DUTY CYCLE = 2% t
90% Vf 400 ns
120 ns V 90%
V 1 K 450
Vfr
DUT
50
10%
514
BAS16WT1
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (A) 10 TA = 150C 1.0 TA = 125C
0.1
TA = 85C
1.0
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.64
0.60
0.56
0.52
Figure 6. Capacitance
515
MOTOROLA
BAS21LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 250 200 625 Unit Vdc mAdc mAdc
1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAS21LT1 = JS
OFF CHARACTERISTICS
Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150C) Reverse Breakdown Voltage (IBR = 100 Adc) Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 ) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 IR V(BR) VF CD trr 1000 1250 5.0 50 pF ns 250 1.0 100 Vdc mV Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
516
BAS21LT1
820 +10 V 2.0 k 100 H 0.1 F D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 3.0 mA OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp trr
517
MOTOROLA
Preliminary Information
BAS40LT1
Motorola Preferred Device
3 1 2
DEVICE MARKING
BAS40LT1 = B1
Preferred devices are Motorola recommended choices for future use and best overall value.
518
MOTOROLA
Preliminary Information
BAS40-04LT1
Motorola Preferred Device
ANODE 3
3 1 2
Preferred devices are Motorola recommended choices for future use and best overall value.
519
MOTOROLA
Preliminary Information
BAS40-06LT1
Motorola Preferred Device
3 1 2
3 CATHODE/ANODE
Preferred devices are Motorola recommended choices for future use and best overall value.
520
MOTOROLA
Preliminary Information
BAS70LT1
Motorola Preferred Device
3 1 2
DEVICE MARKING
BAS70LT1 = BE
Preferred devices are Motorola recommended choices for future use and best overall value.
521
MOTOROLA
Preliminary Information
BAS70-04LT1
Motorola Preferred Device
ANODE 3
3 1 2
Preferred devices are Motorola recommended choices for future use and best overall value.
522
MOTOROLA
Switching Diode
This switching diode has the following features: Low Leakage Current Applications Medium Speed Switching Times Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel Use BAS116LT3 to order the 13 inch/10,000 unit reel
BAS116LT1
Motorola Preferred Device
3 1 2
3 CATHODE
1 ANODE
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 75 200 500 Unit Vdc mAdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAS116LT1 = JV
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 Adc) Reverse Voltage Leakage Current (VR = 75 Vdc) Reverse Voltage Leakage Current (VR = 75 Vdc, TJ = 150C) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 150 mAdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR VF 75 5.0 80 900 1000 1100 1250 2.0 3.0 Vdc nAdc mV
CD trr
pF s
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
523
BAS116LT1
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
524
MOTOROLA
BAT54ALT1
Motorola Preferred Device
ANODE 3
3 1 2
DEVICE MARKING
BAT54ALT1 = B6
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
525
BAT54ALT1
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
1000 TA = 150C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0 5 VF, FORWARD VOLTAGE (VOLTS) 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 30
10
1 50C
0.1 0.0
526
MOTOROLA
BAT54LT1
Motorola Preferred Device
3 1 2
DEVICE MARKING
BAT54LT1 = LV3
Min 30
REV 2
527
BAT54LT1
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
10
1 50C
0.1 0.0
528
MOTOROLA
BAT54SLT1
Motorola Preferred Device
1 ANODE
2 CATHODE 3 CATHODE/ANODE
3 1 2
DEVICE MARKING
BAT54S = LD3
Min 30
REV 2
529
BAT54SLT1
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
10
1 50C
0.1 0.0
530
MOTOROLA
BAT54SWT1
Motorola Preferred Device
1 ANODE
2 CATHODE 3 CATHODE/ANODE
1 2
DEVICE MARKING
BAT54SWT1 = B8
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
531
BAT54SWT1
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
1000 TA = 150C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0 5 VF, FORWARD VOLTAGE (VOLTS) 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 30
10
1 50C
0.1 0.0
532
MOTOROLA
BAT54T1
Motorola Preferred Device
2 1
DEVICE MARKING
BAT54T1 = BU
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
533
BAT54T1
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
10
1 50C
0.1 0.0
534
MOTOROLA
BAT54WT1
Motorola Preferred Device
3 CATHODE
1 ANODE
1 2
DEVICE MARKING
BAT54WT1 = B4
Min 30
REV 1
535
BAT54WT1
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
1000 TA = 150C 100 TA = 125C 10 1.0 TA = 85C 0.1 0.01 TA = 25C 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0 5 VF, FORWARD VOLTAGE (VOLTS) 10 15 20 VR, REVERSE VOLTAGE (VOLTS) 25 30
10
1 50C
0.1 0.0
536
MOTOROLA
BAV70LT1
Motorola Preferred Device
3 1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAV70LT1 = A4
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time RL = 100 (IF = IR = 10 mAdc, VR = 5.0 Vdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CD VF trr 715 855 1000 1250 6.0 ns 60 2.5 100 1.5 pF mVdc 70 Vdc Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
537
BAV70LT1
820 +10 V 2.0 k 100 H 0.1 F D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
0.1
TA = 85C
1.0
TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.9
0.8
0.7
0.6
Figure 4. Capacitance
538
MOTOROLA
BAV70WT1
Motorola Preferred Device
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 RqJA PD 0.625 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAV70WT1 = A4
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) (Figure 2) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) 70 Vdc
IR1 IR2 CD VF
trr VRF
Preferred devices are Motorola recommended choices for future use and best overall value.
539
BAV70WT1
BAV70
RS = 50 IF SAMPLING OSCILLOSCOPE RL = 50
tr
VR
10% OF
VR 100 W
1 K
450
I V 90%
VFR
Figure 2.
OUTPUT PULSE
540
BAV70WT1
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (A) 10 TA = 150C 1.0 TA = 125C
0.1
TA = 85C
1.0
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.9
0.8
0.7
0.6
Figure 5. Capacitance
541
MOTOROLA
BAV74LT1
3 1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAV74LT1 = JA
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 5.0 Adc) Reverse Voltage Leakage Current (VR = 50 Vdc, TJ = 125C) (VR = 50 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, measured at IR = 1.0 mA, RL = 100 ) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CD VF trr 100 0.1 2.0 1.0 4.0 pF Vdc ns 50 Vdc Adc
542
BAV74LT1
Curves Applicable to Each Anode
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (A) 10 TA = 150C TA = 85C 10 TA = 40C 1.0 TA = 125C
0.1
TA = 85C
1.0
TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.9
0.8
0.7
0.6
Figure 3. Capacitance
543
MOTOROLA
BAV99LT1
Motorola Preferred Device
3 1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 65 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAV99LT1 = A7 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina
Preferred devices are Motorola recommended choices for future use and best overall value.
544
BAV99LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 A) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) V(BR) IR 70 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Vdc
mAdc
pF mVdc
CD VF
Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100W Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
trr VFR
ns V
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
545
BAV99LT1
CURVES APPLICABLE TO EACH DIODE
100 10 TA = 150C IF, FORWARD CURRENT (mA) I R, REVERSE CURRENT ( A) 1.0 TA = 125C
0.1
TA = 85C
1.0
0.1 0.2
0.4
0.6
0.8
1.0
1.2
0.001
10
20
30
40
50
0.64
0.60
0.56
0.52
Figure 4. Capacitance
546
MOTOROLA
BAV99WT1 BAV99RWT1
Motorola Preferred Devices
3 1 2 ANODE 1 CATHODE 2
3 CATHODE/ANODE BAV99WT1 CASE 41902, STYLE 9 SC70/SOT323 CATHODE 1 3 CATHODE/ANODE BAV99RWT1 CASE 41902, STYLE 10 SC70/SOT323 ANODE 2
DEVICE MARKING
BAV99WT1 = A7 BAV99RWT1 = F7
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board,(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
Symbol PD
RqJA PD
417 65 to +150
547
BAV99WT1 BAV99RWT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 A) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) V(BR) IR 70 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Vdc
mAdc
pF mVdc
CD VF
Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)
trr VFR
ns V
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
548
BAV99WT1 BAV99RWT1
CURVES APPLICABLE TO EACH DIODE
100 10 TA = 150C IF, FORWARD CURRENT (mA) I R, REVERSE CURRENT ( A) 1.0 TA = 125C
0.1
TA = 85C
1.0
0.1 0.2
0.4
1.2
0.001
10
50
0.64
0.60
0.56
0.52
Figure 4. Capacitance
549
MOTOROLA
BAV170LT1
Motorola Preferred Device
3 1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Symbol PD Value 70 200 500 Unit Vdc mAdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAV170LT1 = JX
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 70 Vdc) Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 RL = 100 V(BR) IR CD VF 70 5.0 80 2.0 900 1000 1100 1250 3.0 Vdc nAdc pF mVdc
trr
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
550
BAV170LT1
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
551
MOTOROLA
BAV199LT1
Motorola Preferred Device
3 1 2
ANODE 1 3 CATHODE/ANODE
CATHODE 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current(1) (averaged over any 20 ms period) Repetitive Peak Forward Current NonRepetitive Peak Forward Current t = 1.0 s t = 1.0 ms t = 1.0 A Symbol VR IF IFM(surge) VRRM IF(AV) IFRM IFSM Value 70 215 500 70 715 450 2.0 1.0 0.5 Unit Vdc mAdc mAdc Vdc mAdc mAdc Adc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RqJA PD Max 225 1.8 556 300 2.4 RqJA TJ, Tstg 417 65 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAV199LT1 = JY 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
552
BAV199LT1
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (EACH DIODE)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) V(BR) IR CD VF trr 900 1000 1100 1250 3.0 s 5.0 80 2.0 pF mVdc 70 Vdc nAdc
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
553
MOTOROLA
BAW56LT1
Motorola Preferred Device
3 1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAW56LT1 = A1
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) RL = 100 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CD VF trr 715 855 1000 1250 6.0 ns 30 2.5 50 2.0 pF mVdc 70 Vdc Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
554
BAW56LT1
820 +10 V 2.0 k 100 H 0.1 F D.U.T. 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
0.1
TA = 85C
1.0
TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
1.5
1.25
1.0
0.75
Figure 4. Capacitance
555
MOTOROLA
BAW56WT1
Motorola Preferred Device
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 RqJA PD 0.625 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAW56WT1 = A1
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 60 mAdc) (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, RL = 100 , IR(REC) = 1.0 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CD VF trr 715 855 1000 1250 6.0 ns 30 2.5 50 2.0 pF mVdc 70 Vdc Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
556
BAW56WT1
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
0.1
TA = 85C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
1.5
1.25
1.0
0.75
Figure 4. Capacitance
557
MOTOROLA
BAW156LT1
Motorola Preferred Device
3 1 2
ANODE 3
CATHODE 1 2 CATHODE
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Symbol PD Value 70 200 500 Unit Vdc mAdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
BAW156LT1 = JZ
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 70 Vdc) Reverse Voltage Leakage Current (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 150 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CD VF 70 5.0 80 2.0 900 1000 1100 1250 3.0 Vdc nAdc pF mVdc
trr
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
558
BAW156LT1
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
559
MOTOROLA
DAN222
SOT416/SC90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT
3 2 1
DEVICE MARKING
DAN222 = N9
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 55 ~ + 150 Unit mW C C
REV 1
560
DAN222
TYPICAL ELECTRICAL CHARACTERISTICS
100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = 40C IR , REVERSE CURRENT (A) 10 TA = 150C 1.0 TA = 125C
0.1
TA = 85C
1.0
TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.9
0.8
0.7
0.6
INPUT PULSE
tr tp
OUTPUT PULSE
trr IF t t
RL
561
MOTOROLA
DAP222
SOT416/SC90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT
3 2 1
DEVICE MARKING
DAP222 = P9
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 55 ~ + 150 Unit mW C C
REV 1
562
DAP222
TYPICAL ELECTRICAL CHARACTERISTICS
100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = 40C IR , REVERSE CURRENT (A) 10 TA = 150C 1.0 TA = 125C
0.1
TA = 85C
1.0
TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
1.5
1.25
1.0
0.75
INPUT PULSE
tr tp
OUTPUT PULSE
trr IF t t
RL
563
MOTOROLA
M1MA141KT1 M1MA142KT1
Motorola Preferred Devices
CATHODE 3
SC70/SOT323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V100 mA SURFACE MOUNT
ANODE NO CONNECTION 1 2
1 2
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 55 ~ + 150 Unit mW C C
Symbol IR
Condition VR = 35 V VR = 75 V
Min 40 80
Unit Adc
VF VR
IF = 100 mA IR = 100 A
Vdc Vdc
CD trr(2)
pF ns
REV 2
564
M1MA141KT1 M1MA142KT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp IF t RL 10% Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100
OUTPUT PULSE
trr t
MHX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
10 TA = 40C
0.1
TA = 85C
1.0
TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.64
0.6
0.56
0.52
Figure 3. Diode Capacitance Motorola SmallSignal Transistors, FETs and Diodes Device Data 565
MOTOROLA
M1MA141WAT1 M1MA142WAT1
Motorola Preferred Devices
SC70/SOT323 PACKAGE COMMON ANODE DUAL SWITCHING DIODE 40/80 V100 mA SURFACE MOUNT
1 CATHODE
1 2
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 55 ~ + 150 Unit mW C C
Symbol IR VF VR CD trr(2)
Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 A VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR
Min 40 80
Unit Adc
Vdc Vdc
pF ns
REV 2
566
M1MA141WAT1 M1MA142WAT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp IF t RL 10% Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100
OUTPUT PULSE
trr t
MNX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = 40C IR , REVERSE CURRENT (A)
0.1
TA = 85C
1.0
TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
1.5
1.25
1.0
0.75
Figure 3. Diode Capacitance Motorola SmallSignal Transistors, FETs and Diodes Device Data 567
MOTOROLA
M1MA141WKT1 M1MA142WKT1
Motorola Preferred Devices
SC70/SOT323 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE 40/80 V100 mA SURFACE MOUNT
1 ANODE
1 2
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 55 ~ + 150 Unit mW C C
Symbol IR VF VR CD trr(2)
Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 A VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR
Min 40 80
Unit Adc
Vdc Vdc
pF ns
REV 2
568
M1MA141WKT1 M1MA142WKT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp IF t RL 10% Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100
OUTPUT PULSE
trr t
MTX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = 40C IR , REVERSE CURRENT (A)
0.1
TA = 85C
1.0
TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.9
0.8
0.7
0.6
Figure 3. Diode Capacitance Motorola SmallSignal Transistors, FETs and Diodes Device Data 569
MOTOROLA
M1MA151AT1 M1MA152AT1
Motorola Preferred Devices
ANODE 3
SC59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V100 mA SURFACE MOUNT
2 1 CATHODE NO CONNECTION
2 1
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 to + 150 Unit mW C C
Symbol IR
Condition VR = 35 V VR = 75 V
Min 40 80
Unit Adc
VF VR
IF = 100 mA IR = 100 A
Vdc Vdc
CD trr(2)
pF ns
REV 3
570
M1MA151AT1 M1MA152AT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp IF t RL 10% Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100
OUTPUT PULSE
trr t
DEVICE MARKING
Marking Symbol
Type No. Symbol 151A MA 152A MB
MAX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
571
MOTOROLA
M1MA151KT1 M1MA152KT1
Motorola Preferred Devices
CATHODE 3
SC59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V100 mA SURFACE MOUNT
2 ANODE
1 NO CONNECTION
2 1
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 to + 150 Unit mW C C
Symbol IR
Condition VR = 35 V VR = 75 V
Min 40 80
Unit Adc
VF VR
IF = 100 mA IR = 100 A
Vdc Vdc
CD trr(2)
pF ns
REV 3
572
M1MA151KT1 M1MA152KT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp IF t RL 10% Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100
OUTPUT PULSE
trr t
MHX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
573
MOTOROLA
M1MA151WAT1 M1MA152WAT1
Motorola Preferred Devices
SC59 PACKAGE COMMON ANODE DUAL SWITCHING DIODES 40/80 V100 mA SURFACE MOUNT
2 CATHODE
2 1
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 to + 150 Unit mW C C
Symbol IR VF VR CD trr(2)
Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 A VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR
Min 40 80
Unit Adc
Vdc Vdc
pF ns
REV 3
574
M1MA151WAT1 M1MA152WAT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp IF t RL 10% Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100
OUTPUT PULSE
trr t
MNX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
575
MOTOROLA
M1MA151WKT1 M1MA152WKT1
Motorola Preferred Devices
SC59 PACKAGE COMMON CATHODE DUAL SWITCHING DIODES 40/80 V100 mA SURFACE MOUNT
3 2
2 ANODE
THERMAL CHARACTERISTICS
Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 200 150 55 to + 150 Unit mW C C
Symbol IR VF VR CD trr(2)
Condition VR = 35 V VR = 75 V IF = 100 mA IR = 100 A VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR
Min 40 80
Unit Adc
Vdc Vdc
pF ns
REV 3
576
M1MA151WKT1 M1MA152WKT1
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE
tr tp IF t RL 10% Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns IF = 10 mA VR = 6 V RL = 100
OUTPUT PULSE
trr t
MTX
The X represents a smaller alpha digit Date Code. The Date Code indicates the actual month in which the part was manufactured.
577
MOTOROLA
Preliminary Information
MBD54DWT1
Motorola Preferred Device
DEVICE MARKING
MBD54DWT1 = BL
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
578
MBD54DWT1
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
10
1 50C
0.1 0.0
30
579
MOTOROLA
Designed primarily for UHF mixer applications but suitable also for use in detector and ultrafast switching circuits. Supplied in an inexpensive plastic package for lowcost, highvolume consumer requirements. Also available in Surface Mount package. Low Noise Figure 6.0 dB Typ @ 1.0 GHz Very Low Capacitance Less Than 1.0 pF @ Zero Volts High Forward Conductance 0.5 Volts (Typ) @ IF = 10 mA
MBD101 MMBD101LT1
Motorola Preferred Devices
2 CATHODE
1 ANODE
1 2
3 CATHODE
1 ANODE
MAXIMUM RATINGS
MBD101 Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR PF 280 2.2 TJ Tstg +150 55 to +150 225 1.8 mW mW/C C C MMBD101LT1 Value 7.0 Unit Volts CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
1 2
DEVICE MARKING
MMBD101LT1 = 4M
NOTE: MMBD101LT1 is also available in bulk packaging. Use MMBD101L as the device title to order this device in bulk.
Preferred devices are Motorola recommended choices for future use and best overall value.
580
MBD101 MMBD101LT1
TYPICAL CHARACTERISTICS
(TA = 25C unless noted)
1.0 0.7 IF, FORWARD CURRENT (mA) IR, REVERSE LEAKAGE (m A) 0.5 0.2 0.1 0.07 0.05 VR = 3.0 Vdc 100 TA = 85C 10
0.02 0.01 0.1 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (C) 120 130 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS)
1.0
11 10 NF, NOISE FIGURE (dB) LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (TEST CIRCUIT IN FIGURE 5)
C, CAPACITANCE (pF)
0.9
0.8
0.7
0.6
1.0
2.0
3.0
4.0
1.0
0.1
0.2
0.5
1.0
2.0
5.0
10
Figure 3. Capacitance
LOCAL OSCILLATOR
NOTES ON TESTING AND SPECIFICATIONS Note 1 CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter).
581
MOTOROLA
Space Savings:
Package SOT363 1
SOT23
40%
SOT23
70%
The MBD110DW, MBD330DW, and MBD770DW devices are spinoffs of our popular MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT23 devices. They are designed for highefficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Extremely Low Minority Carrier Lifetime Very Low Capacitance Low Reverse Leakage
MAXIMUM RATINGS
Rating Reverse Voltage MBD110DWT1 MBD330DWT1 MBD770DWT1 Symbol VR Value 7.0 30 70 120 55 to +125 55 to +150 Unit Vdc
PF TJ Tstg
mW C C
DEVICE MARKING
MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
582
Diode Capacitance (VR = 0, f = 1.0 MHz, Note 1) Total Capacitance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 3.0 V) (VR = 25 V) (VR = 35 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA)
583
10 TA = 85C TA = 40C
0.02 MBD110DWT1 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (C) 120 130
0.1 0.3
0.4
0.7
0.8
1.0
11 10 NF, NOISE FIGURE (dB) LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5)
C, CAPACITANCE (pF)
0.9
0.8
0.7
MBD110DWT1 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) 10
0.6
Figure 3. Capacitance
LOCAL OSCILLATOR
NOTES ON TESTING AND SPECIFICATIONS Note 1 CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). Note 2 Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. Note 3 LS is measured on a package having a short instead of a die, using an impedance bridge (Boonton Radio Model 250A RX Meter).
584
MBD330DWT1
200
100
0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 10 20 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100
TA = 75C 0.1
0.01
TA = 25C
1.0 TA = 25C
0.1 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2
585
1.2
0.8
200
0.4
100
0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 20 30 50 70 40 60 IF, FORWARD CURRENT (mA) 80 90 100
10 TA = 85C TA = 40C
TA = 75C 0.1
1.0 TA = 25C
0.01
TA = 25C
0.1 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0
586
MOTOROLA
MBD301 MMBD301LT1
Motorola Preferred Devices
1 2
2 CATHODE
1 ANODE
3 1 2
DEVICE MARKING
MMBD301LT1 = 4T
3 CATHODE
1 ANODE
NOTE: MMBD301LT1 is also available in bulk packaging. Use MMBD301L as the device title to order this device in bulk.
Preferred devices are Motorola recommended choices for future use and best overall value.
587
MBD301 MMBD301LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.8 f = 1.0 MHz C T, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 500
300
200
100
10
100
1.0
TA = 100C
10 TA = 85C TA = 40C
0.1
75C
1.0 TA = 25C
0.01
25C
0.001
0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2
IF(PEAK)
CAPACITIVE CONDUCTION
SINUSOIDAL GENERATOR
PADS DUT
588
MOTOROLA
MBD701 MMBD701LT1
Motorola Preferred Devices
1 2
2 CATHODE
1 ANODE
DEVICE MARKING
MMBD701LT1 = 5H
3 CATHODE
1 ANODE
NOTE: MMBD701LT1 is also available in bulk packaging. Use MMBD701L as the device title to order this device in bulk.
Preferred devices are Motorola recommended choices for future use and best overall value.
589
MBD701 MMBD701LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.0 f = 1.0 MHz C T, TOTAL CAPACITANCE (pF) 1.6 500
1.2
300
0.8
200
0.4
100
10
100
1.0
TA = 100C
10 TA = 85C TA = 40C
0.1
TA = 75C
1.0 TA = 25C
0.01
TA = 25C
0.001
0.1 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0
IF(PEAK)
CAPACITIVE CONDUCTION
SINUSOIDAL GENERATOR
PADS DUT
590
MOTOROLA
1 2
TO92
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD 280 2.8 TJ Tstg 200 2.0 +125 55 to +150 200 1.6 mW mW/C C C
1
MBV109T1
MMBV109LT1 30 200
MV209
DEVICE MARKING
MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209
Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MBV109T1, MMBV109LT1, MV209 Min 26 Nom 29 Max 32
CR, Capacitance Ratio C3/C25 f = 1.0 MHz (Note 1) Min 5.0 Max 6.5
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc. MMBV109LT1 is also available in bulk packaging. Use MMBV109L as the device title to order this device in bulk.
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMBV109LT1/D)
591
100 60 I R , REVERSE CURRENT (nA) 20 10 6.0 2.0 1.0 0.6 0.2 0.1 0.06 VR = 20 Vdc
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz Ct Cc + Cj
0.02 0.01 0.006 40 20 0 +20 +40 +60 +80 +100 +120 +140
0.002 0.001 60
592
MOTOROLA
14 1
2
16 Diode Array
8 12
10 13 14
7 2 14
11 12
MMAD130
3
8 Diode Array (Common Cathode) 14 1
4
Dual 8 Diode Array 8
5
2 3 5 7 8 9 11 12 7 6 7 Diode Array (Independent) 5 4 3 2 1 14 NC Pin 6, 13 MMAD1107 2 3 11 12 4 5 9 10 7
10 11 12 13 MMAD1109
14
REV 1
593
NOTES: 1. This parameter must be measured using pulse techniques. PW = 100 s, duty cycle 20%. 2. This parameter is measured using pulse techniques. PW = 300 s, duty cycle 2.0%. Read time is 90 s from the leading edge of the pulse. 3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle 2.0%, pulse rise time 10 ns. The total capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
1000
100 TA = +25C 10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
594
IF
Vmeas 14 2 3 5 7 8 9 11 12
IF +
Vmeas 14 2 3 5 7 8 9 11 12
Figure 2 2.1. KELVIN CONNECTION To achieve the best possible accuracy when testing bias currents over 10 mA, Kelvin connection to the leads of the device under test is mandatory. True Kelvin connection dictates that two test connections are made directly to the leads of the device. One is for power which is the bias supply, and the other is for sense which is for the measurement circuit. Kelvin connections are used to eliminate the effects of the connection resistance between the lead of the device and the contacts of the test handler and/or hand fixture. Figure 3 is an example of Kelvin connection.
VR
11
12
14
BIAS A
2 3 5 7 8 9 11 12
TEST HI MEAS
TEST LO
VR
14
Figure 1 Figure 3 1.2. BREAKDOWN It is not recommended to test breakdown on these devices due to the possibility of degrading the device. Breakdown may be checked on a curve tracer but extreme caution should be used. 2.0. FORWARD BIAS TESTING Diode arrays are designed with the pairs in parallel; therefore, care must be taken to prevent the other diodes in the array from affecting the measured value of the diode under test. Figure 2 illustrates the proper technique to measure only the correct value of the diode under test. 2.2. PULSE TESTING When testing bias currents over 10 mA, pulse testing should be used to minimize thermal drift of the measured value. The pulse width of a pulse test is approximately 300 s to 380 s. 3.0. TESTING PROTOCOL 3.1. TEST TYPES When testing in sequence all of the electrical characteristics, all reverse bias conditions should be tested before the forward bias conditions are tested. 3.2. BIASING MAGNITUDES Tests of the same test type should be grouped together with the bias conditions in ascending order. For example: VF @ 10 mA < 0.6 V VF @ 50 mA < 0.8 V VF @ 100 mA < 1 V VF @ 500 mA < 1.5 V Motorola SmallSignal Transistors, FETs and Diodes Device Data 595
MOTOROLA
MMAD1108
Motorola Preferred Device
16 1
MAXIMUM RATINGS
Rating Peak Reverse Voltage SteadyState Reverse Voltage Peak Forward Current 25C Continuous Forward Current Power Dissipation Derating Factor Operating Temperature Storage Temperature Range Symbol VRM VR IFM IF PD TA Tstg Value 50 50 500 400 500 4.0 65 to +150 65 to +150 Unit Vdc Vdc mAdc mAdc mW mW/C C C
16
15 14 13 12 11 10
NOTES: 1. This parameter must be measured using pulse techniques. PW = 100 s, duty cycle 20%. 2. This parameter is measured using pulse techniques. PW = 300 s, duty cycle 2.0%. Read time is 90 s from the leading edge of the pulse. 3. The initial instantaneous value is measured using pulse techniques. PW = 150 ns, duty cycle 2.0%, pulse rise time 10 ns. The total capacitance shunting the diode is 19 pF maximum and the equipment bandwidth is 80 MHz.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
596
MMAD1108
ELECTRICAL CHARACTERISTICS (@ 25C FreeAir Temperature) (Continued)
Characteristic Symbol Typical Value Unit
1000
100 TA = +25C 10
1.0
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
597
MMAD1108
TEST PROCEDURE FOR MULTIPLE DIODES
1.0. REVERSE BIAS TESTING 1.1. LEAKAGE Regardless of device configuration type, when testing any reverse bias condition, the forcing power supply must be applied only to the uncommon terminal of the pair. As in Figure 1, this would be pins 1 and 14. This can be referred as the high side of the test circuit. The low side of the test circuit must be connected to the common terminal of the pair which in most testers is where the current measurement is taken. This method is used to eliminate the possibility of degrading the diode in that pair which is not under test. Diode arrays with multiple pairs such as the MMAD1103, also have leakage paths in the die between common terminals of the pairs. To isolate the device under test so that the leakage from the other pairs in the package do not affect the test result, the leakage current from the common terminals of the pairs not under test must be shunted to measurement common. Figure 1 shows the test configuration for both of these cases.
1
IF
Vmeas 14 2 3 5 7 8 9 11 12
IF +
Vmeas 14 2 3 5 7 8 9 11 12
Figure 2 2.1. KELVIN CONNECTION To achieve the best possible accuracy when testing bias currents over 10 mA, Kelvin connection to the leads of the device under test is mandatory. True Kelvin connection dictates that two test connections are made directly to the leads of the device. One is for power which is the bias supply, and the other is for sense which is for the measurement circuit. Kelvin connections are used to eliminate the effects of the connection resistance between the lead of the device and the contacts of the test handler and/or hand fixture. Figure 3 is an example of Kelvin connection.
VR
11
12
14
BIAS A
2 3 5 7 8 9 11 12
TEST HI MEAS
TEST LO
VR
14
Figure 1 Figure 3 1.2. BREAKDOWN It is not recommended to test breakdown on these devices due to the possibility of degrading the device. Breakdown may be checked on a curve tracer but extreme caution should be used. 2.0. FORWARD BIAS TESTING Diode arrays are designed with the pairs in parallel; therefore, care must be taken to prevent the other diodes in the array from affecting the measured value of the diode under test. Figure 2 illustrates the proper technique to measure only the correct value of the diode under test. 2.2. PULSE TESTING When testing bias currents over 10 mA, pulse testing should be used to minimize thermal drift of the measured value. The pulse width of a pulse test is approximately 300 s to 380 s. 3.0. TESTING PROTOCOL 3.1. TEST TYPES When testing in sequence all of the electrical characteristics, all reverse bias conditions should be tested before the forward bias conditions are tested. 3.2. BIASING MAGNITUDES Tests of the same test type should be grouped together with the bias conditions in ascending order. For example: VF @ 10 mA < 0.6 V VF @ 50 mA < 0.8 V VF @ 100 mA < 1 V VF @ 500 mA < 1.5 V 598 Motorola SmallSignal Transistors, FETs and Diodes Device Data
MOTOROLA
1 ANODE
3 CATHODE/ANODE
2 CATHODE
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
1 CATHODE
3 CATHODE/ANODE
2 ANODE
DEVICE MARKING
MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1 3 CATHODE
ANODE 1 2 ANODE
OFF CHARACTERISTICS
Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 VF IR C 0.25 10 1.0 pF 0.60 V
mA
ANODE 3
CATHODE 1
REV 2
599
10 TA = 40C
TA = 85C
0.9
0.8
1.0 TA = 25C
0.7
0.1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Capacitance
5100
MOTOROLA
MMBD352WT1
3 1 2
1 ANODE
3 CATHODE/ANODE
2 CATHODE
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Symbol VR Value 7.0 Unit VCC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 1.6 RqJA PD 625 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBD352WT1 = M5
OFF CHARACTERISTICS
Forward Voltage (IF = 10 mAdc) Reverse Voltage Leakage Current (VR = 3.0 V) (VR = 7.0 V) Capacitance (VR = 0 V, f = 1.0 MHz) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 VF IR C 0.25 10 1.0 pF 0.60 V
mA
5101
MMBD352WT1
TYPICAL CHARACTERISTICS
100 I F, FORWARD CURRENT (mA) 1.0
10 TA = 40C
TA = 85C
0.9
0.8
1.0 TA = 25C
0.7
0.1 0.3 0.4 0.5 0.6 0.7 VF, FORWARD VOLTAGE (VOLTS)
Figure 2. Capacitance
5102
MOTOROLA
MMBD452LT1
Motorola Preferred Devices
3 1 2
DEVICE MARKING
MMBD452LT1 = 5N
Preferred devices are Motorola recommended choices for future use and best overall value.
5103
MMBD452LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.8 f = 1.0 MHz C T, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 500
300
200
100
10
100
1.0
TA = 100C
10 TA = 85C TA = 40C
0.1
75C
1.0 TA = 25C
0.01
25C
0.001
0.1 0 6.0 12 18 VR, REVERSE VOLTAGE (VOLTS) 24 30 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2
IF(PEAK)
CAPACITIVE CONDUCTION
SINUSOIDAL GENERATOR
PADS DUT
5104
MOTOROLA
MMBD717LT1
Motorola Preferred Device
ANODE 3
CATHODE 1 2 CATHODE
1 2
DEVICE MARKING
MMBD717LT1 = B3
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
5105
MMBD717LT1
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
5106
MOTOROLA
MMBD914LT1
Motorola Preferred Device
3 1
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBD914LT1 = 5D
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 100 mAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR CT VF trr 25 5.0 4.0 1.0 4.0 nAdc mAdc pF Vdc ns 100 Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
5107
MMBD914LT1
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
TA = 25C 1.0
0.1
TA = 85C
0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS)
0.001
10
20
30
40
50
0.68
0.64
0.60
0.56
Figure 4. Capacitance
5108
MOTOROLA
Switching Diode
Part of the GreenLine Portfolio of devices with energyconserving traits. This switching diode has the following features: Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste Offered in four Surface Mount package types Available in 8 mm Tape and Reel in quantities of 3,000 Applications ESD Protection Reverse Polarity Protection Steering Logic MediumSpeed Switching
MMBD1000LT1
3 1 2
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM (surge) Value 30 200 500 Unit Vdc mAdc
1
MMBD2000T1
3
mA
DEVICE MARKING
MMBD1000LT1 = AY MMBD2000T1 = DH MMBD3000T1 = XP MMSD1000T1 = 4K
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Derate above 25C MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Thermal Resistance Junction to Ambient MMBD1000LT1, MMBD3000T1, MMSD1000T1 MMBD2000T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA C/W 556 833 TJ, Tstg 55 to +150 C
1
MMSD1000T1
2
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
5109
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
5110
MOTOROLA
Switching Diode
Part of the GreenLine Portfolio of devices with energyconserving traits. This switching diode has the following features: Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a nonforwardbiased condition. Offered in four Surface Mount package types Available in 8 mm Tape and Reel in quantities of 3,000 Applications ESD Protection Reverse Polarity Protection Steering Logic MediumSpeed Switching
ANODE 3 CATHODE 1 2 CATHODE
MMBD1005LT1
3 1 2
MMBD2005T1
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM (surge) Value 30 200 500 Unit Vdc mAdc mA
1 2
DEVICE MARKING
MMBD1005LT1 = A3 MMBD2005T1 = DI MMBD3005T1 = XQ MMBD3005T1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1005LT1, MMBD3005T1 MMBD2005T1 Derate above 25C MMBD1005LT1, MMBD3005T1 MMBD2005T1 Thermal Resistance Junction to Ambient MMBD1005LT1, MMBD3005T1 MMBD2005T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA 556 833 55 to +150 C Max Unit mW CASE 318D-04, STYLE 5 SC59 mW/C C/W
2 1
TJ, Tstg
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
5111
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a nonforwardbiased condition.
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
5112
MOTOROLA
Switching Diode
Part of the GreenLine Portfolio of devices with energyconserving traits. This switching diode has the following features: Very Low Leakage ( 500 pA) promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a nonforwardbiased condition. Offered in four Surface Mount package types Available in 8 mm Tape and Reel in quantities of 3,000 Applications ESD Protection Reverse Polarity Protection Steering Logic MediumSpeed Switching
3 CATHODE ANODE 1 2 ANODE
MMBD1010LT1
3 1 2
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM (surge) Value 30 200 500 Unit Vdc mAdc mA
MMBD2010T1
3 1 2
DEVICE MARKING
MMBD1010LT1 = A5 MMBD2010T1 = DP MMBD3010T1 = XS
MMBD3010T1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR-4 Board (1) TA = 25C MMBD1010LT1, MMBD3010T1 MMBD2010T1 Derate above 25C MMBD1010LT1, MMBD3010T1 MMBD2010T1 Thermal Resistance Junction to Ambient MMBD1010LT1, MMBD3010T1 MMBD2010T1 Junction and Storage Temperature Symbol PD 225 150 1.8 1.2 RJA 556 833 55 to +150 C Max Unit mW
2 1 3
mW/C C/W
TJ, Tstg
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
5113
(2) Guaranteed leakage limit is for each diode in the pair contingent upon the other diode being in a nonforwardbiased condition.
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
5114
MOTOROLA
MMBD2835LT1 MMBD2836LT1
3 1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBD2835LT1 = A3X; MMBD2836LT1 = A2X
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IR = 100 Adc) Reverse Voltage Leakage Current (VR = 30 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMBD2835LT1 MMBD2836LT1 MMBD2835LT1 MMBD2836LT1 CT VF V(BR) IR 35 75 100 100 4.0 1.0 1.0 1.2 4.0 pF Vdc Vdc nAdc
trr
ns
REV 1
5115
MMBD2835LT1 MMBD2836LT1
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
TA = 25C 1.0
0.1
TA = 85C
0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS)
0.001
10
20
30
40
50
1.75
1.50
1.25
1.00
Figure 4. Capacitance
5116
MOTOROLA
MMBD2837LT1 MMBD2838LT1
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBD2837LT1 = A5; MMBD2838LT1 = MA6
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 30 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMBD2837LT1 MMBD2838LT1 MMBD2837LT1 MMBD2838LT1 CT VF V(BR) IR 0.1 0.1 4.0 1.0 1.0 1.2 4.0 pF Vdc 35 75 Vdc Adc
trr
ns
REV 1
5117
MMBD2837LT1 MMBD2838LT1
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
TA = 25C 1.0
0.1
TA = 85C
0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS)
0.001
10
20
30
40
50
0.9
0.8
0.7
0.6
Figure 4. Capacitance
5118
MOTOROLA
Switching Diode
MMBD6050LT1
3 CATHODE
1 ANODE
1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 70 200 500 Unit Vdc mAdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBD6050LT1 = 5A
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 50 Vdc) Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) Capacitance (VR = 0 V) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR VF 0.55 0.85 trr C 0.7 1.1 4.0 2.5 ns pF 70 0.1 Vdc Adc Vdc
REV 1
5119
MMBD6050LT1
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
TYPICAL CHARACTERISTICS
100 I F, FORWARD CURRENT (mA) TA = 85C 10 10 TA = 150C I R , REVERSE CURRENT (m A) TA = 40C 1.0 TA = 125C
TA = 25C 1.0
0.1
TA = 85C
0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS)
0.001
10
20
30
40
50
0.68
0.64
0.60
0.56
Figure 4. Capacitance
5120
MOTOROLA
MMBD6100LT1
3 1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBD6100LT1 = 5BM
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 50 Vdc) Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) Capacitance (VR = 0 V) V(BR) IR VF 0.55 0.85 trr C 0.7 1.1 4.0 2.5 ns pF 70 0.1 Vdc Adc Vdc
5121
MMBD6100LT1
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
TA = 25C 1.0
0.1
TA = 85C
0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS)
0.001
10
20
30
40
50
0.9
0.8
0.7
0.6
Figure 4. Capacitance
5122
MOTOROLA
MMBD7000LT1
Motorola Preferred Device
3 1 2
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR 5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
DEVICE MARKING
MMBD7000LT1 = M5C
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 50 Vdc) (VR = 100 Vdc) (VR = 50 Vdc, 125C) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) Capacitance (VR = 0 V) 1. FR 5 = 1.0 0.75 2. Alumina = 0.4 0.3 V(BR) IR IR2 IR3 VF 0.55 0.67 0.75 trr C 0.7 0.82 1.1 4.0 1.5 ns pF 100 1.0 3.0 100 Vdc Vdc Adc
Preferred devices are Motorola recommended choices for future use and best overall value.
5123
MMBD7000LT1
820 +10 V 2.0 k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE VR INPUT SIGNAL 90% IR iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
TA = 25C 1.0
0.1
TA = 85C
0.1 0.2 0.4 0.6 0.8 1.0 1.2 VF, FORWARD VOLTAGE (VOLTS)
0.001
10
20
30
40
50
0.68
0.64
0.60
0.56
Figure 4. Capacitance
5124
MOTOROLA
MMBV105GLT1
Motorola Preferred Device
3 1 2
3 Cathode
1 Anode
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 30 200 225 1.8 +125 55 to +150 Unit Vdc mAdc mW mW/C C C
DEVICE MARKING
MMBV105GLT1 = M4E
Device Type
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
5125
MMBV105GLT1
TYPICAL CHARACTERISTICS
20 18 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 16 14 12 10 8.0 6.0 4.0 2.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 10 10 100 f, FREQUENCY (MHz) 1000 f = 1.0 MHz TA = 25C VR = 3 Vdc TA = 25C 100 1000
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
5126
MOTOROLA
MMBV409LT1 MV409
Motorola Preferred Devices
2 Cathode
TO92
1 Anode
1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD 280 2.8 TJ Tstg +125 55 to +150 225 1.8 mW mW/C C C MBV409 MMBV409LT1 20 200 Unit Vdc mAdc
1 2
DEVICE MARKING
MMBV409LT1 = X5, MV409 = MV409
Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV409LT1, MV409 Min 26 Nom 29 Max 32
CR, Capacitance Ratio C3/C8 f = 1.0 MHz(1) Min 1.5 Max 1.9
Preferred devices are Motorola recommended choices for future use and best overall value.
5127
MMBV409LT1 MV409
TYPICAL CHARACTERISTICS
40 C T, DIODE CAPACITANCE (pF) 1000
Q, FIGURE OF MERIT
24
16
8 10
10
20
30
100
10
1000
100 60 I R , REVERSE CURRENT (nA) 20 10 6.0 2.0 1.0 0.6 0.2 0.1 0.06 VR = 15 Vdc
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
0.02 0.01 0.006 40 20 0 +20 +40 +60 +80 +100 +120 +140
0.002 0.001 60
5128
MOTOROLA
MMBV432LT1
Motorola Preferred Device
3 1 2
DEVICE MARKING
MMBV432LT1 = M4B
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
5129
MMBV432LT1
TYPICAL CHARACTERISTICS (Each Diode)
100 CT , DIODE CAPACITANCE (pF) 70 50 Q, FIGURE OF MERIT 450 550
350
150
10
10
50
10
200 100 50 20 10
0.98
f = 1.0 MHz
20
30
50 70 100
200 300
0.96 75
50
25
+25
+50
+75
+100
+125
f, FREQUENCY (MHz)
10
12
14
5130
MOTOROLA
MMBV609LT1
Motorola Preferred Device
3 1 2
DEVICE MARKING
MMBV609LT1 = 5L
Preferred devices are Motorola recommended choices for future use and best overall value.
5131
MMBV609LT1
TYPICAL CHARACTERISTICS
50 CT , DIODE CAPACITANCE (pF) 1000
Q, FIGURE OF MERIT
40
30
20
10
10
20
30
40
10
10
1000
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
5132
MOTOROLA
MMBV809LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Total Power Dissipation(1) @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range 1. FR5 Board 1.0 x 0.75 x 0.62 in. Symbol VR IF PD TJ Tstg Value 20 20 225 1.8 +125 55 to +125 Unit Vdc mAdc mW mW/C C C
DEVICE MARKING
MMBV809LT1 = 5K
CR, Capacitance Ratio C2/C8 f = 1.0 MHz(2) Min 1.8 Max 2.6
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
5133
MMBV809LT1
TYPICAL CHARACTERISTICS
10 9 CT , DIODE CAPACITANCE (pF) Q, FIGURE OF MERIT 8 7 6 5 4 3 2 1 0 0.5 1 2 3 4 5 8 10 15 10 0.1 1.0 f, FREQUENCY (GHz) 10 VR = 3 Vdc TA = 25C 100 1000
1000
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
600
5134
MOTOROLA
1 Anode
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1 MV2101 MV2104 MV2105 MV2108 MV2109 MV2111 MV2115
6.8100 pF 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES
3
TO92
1 Anode
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD 280 2.8 TJ Tstg +150 55 to +150 225 1.8 mW mW/C C C
1 2
MV21xx
MMBV21xxLT1 30 200
DEVICE MARKING
MMBV2101LT1 = M4G MMBV2103LT1 = 4H MMBV2105LT1 = 4U MMBV2107LT1 = 4W MMBV2108LT1 = 4X MMBV2109LT1 = 4J
REV 1
5135
CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MMBV2101LT1/MV2101 MMBV2103LT1 MV2104 MMBV2105LT1/MV2105 MMBV2107LT1 MMBV2108LT1/MV2108 MMBV2109LT1/MV2109 MV2111 MV2115 Min 6.1 9.0 10.8 13.5 19.8 24.3 29.7 42.3 90 Nom 6.8 10 12 15 22 27 33 47 100 Max 7.5 11 13.2 16.5 24.2 29.7 36.3 51.7 110
Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Typ 450 400 400 400 350 300 200 150 100 Min 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.6
TR, Tuning Ratio C2/C30 f = 1.0 MHz Typ 2.7 2.9 2.9 2.9 2.9 3.0 3.0 3.0 3.0 Max 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.2 3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop the T1 suffix when ordering any of these devices in bulk.
+ 2pfC G
5136
TA = 25C
5.0
10
15
20
25
30
MMBV2101LT1/MV2101
MV2115
TA = 25C f = 50 MHz 20 30
10 10
200
250
5137
MOTOROLA
MMBV3102LT1
Motorola Preferred Device
3 Cathode
1 Anode
1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Value 30 200 225 1.8 +125 55 to +150 Unit Vdc mAdc mW mW/C C C
DEVICE MARKING
MMBV3102LT1 = M4C
Ct, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MMBV3102LT1 Min 20 Nom 22 Max 25
CR, Capacitance Ratio C3/C25 f = 1.0 MHz Min 4.5 Typ 4.8
Preferred devices are Motorola recommended choices for future use and best overall value.
5138
MMBV3102LT1
TYPICAL CHARACTERISTICS
40 Q, FIGURE OF MERIT (x 1000) 36 CT , DIODE CAPACITANCE (pF) 32 28 24 20 16 12 8.0 4.0 0 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 f = 1.0 MHz TA = 25C 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 TA = 25C f = 50 MHz
3.0
6.0
9.0
12
15
18
21
24
27
30
1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 VR = 3.0 Vdc f = 1.0 MHz
10 VR = 20 Vdc 1.0
0.1
0.01
0.001 60
20
+20
+60
+100
+140
5139
MOTOROLA
MMBV3401LT1
Motorola Preferred Device
3 1
3 Cathode
1 Anode
MAXIMUM RATINGS
Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR PD TJ Tstg Value 20 200 2.0 +125 55 to +150 Unit Vdc mW mW/C C C
DEVICE MARKING
MMBV3401LT1 = 4D
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
5140
MMBV3401LT1
TYPICAL CHARACTERISTICS
1.6 R S , SERIES RESISTANCE (OHMS) I F , FORWARD CURRENT (mA) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2.0 4.0 6.0 8.0 10 12 14 16 0 0.5 0.6 0.7 0.8 0.9 1.0 TA = 25C 50
40
30 TA = 25C 20
10
TA = 25C
VR = 25 Vdc
+20
+60
+100
+140
5141
MOTOROLA
MMBV3700LT1 MPN3700
SILICON PIN SWITCHING DIODES
3 1 2
1 Anode
1 Anode
1 2
MAXIMUM RATINGS
Rating Reverse Voltage Total Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR PD 280 2.8 TJ Tstg +125 55 to +150 200 2.0 mW mW/C C C MPN3700 MMBV3700LT1 200 Unit Vdc
DEVICE MARKING
MMBV3700LT1 = 4R
5142
MMBV3700LT1 MPN3700
TYPICAL CHARACTERISTICS
3.2 R S , SERIES RESISTANCE (OHMS) TA = 25C I F , FORWARD CURRENT (mA) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2.0 4.0 6.0 8.0 10 12 14 16 800 700 600 500 400 300 200 100 0 0.7 0.8 0.9 1.0 TA = 25C
VR = 15 Vdc
+20
+60
+100
+140
5143
MOTOROLA
MMSD301T1 MMSD701T1
Motorola Preferred Devices
2 1
MAXIMUM RATINGS
Rating Reverse Voltage Forward Power Dissipation TA = 25C Junction Temperature Storage Temperature Range MMSD301T1 MMSD701T1 Symbol VR PF TJ Tstg Value 30 70 225 55 to +125 55 to +150 Unit Vdc mW C C
DEVICE MARKING
MMSD301T1 = XT, MMSD701T1 = XH
Preferred devices are Motorola recommended choices for future use and best overall value.
(Replaces MMSD101T1/D)
5144
MMSD301T1 MMSD701T1
TYPICAL CHARACTERISTICS MMSD301T1
2.8 CT, TOTAL CAPACITANCE (pF) 2.4 2.0 1.6 1.2 0.8 0.4 0 f = 1.0 MHz 500
MMSD301T1
200
100
0 0 3.0 6.0 9.0 12 15 18 21 VR, REVERSE VOLTAGE (VOLTS) 24 27 30 0 10 20 40 60 30 50 70 IF, FORWARD CURRENT (mA) 80 90 100
TA = 75C 0.1
0.01
TA = 25C
1.0 TA = 25C
0.1 0.2 0.4 0.6 0.8 VF, FORWARD VOLTAGE (VOLTS) 1.0 1.2
5145
MMSD301T1 MMSD701T1
TYPICAL CHARACTERISTICS MMSD701T1
2.0 CT, TOTAL CAPACITANCE (pF) f = 1.0 MHz 1.6 500 MMSD701T1 MMSD701T1 400 KRAKAUER METHOD 300
1.2
0.8
200
0.4
100
0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 10 20 30 50 70 40 60 IF, FORWARD CURRENT (mA) 80 90 100
10 TA = 85C TA = 40C
TA = 75C 0.1
1.0 TA = 25C
0.01
TA = 25C
0.1 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0
5146
MOTOROLA
Switching Diode
The switching diode has the following features: SOD123 Surface Mount Package High Breakdown Voltage Fast Speed Switching Time
1 Cathode 2 Anode
MMSD914T1
Motorola Preferred Device
2 1
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF IFM(surge) Value 100 200 500 Unit Vdc mAdc mAdc
DEVICE MARKING
MMSD914T1 = 5D
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board(1) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RqJA PD 556 300 2.4 RqJA TJ, Tstg 417 55 to +150 Unit mW mW/C C/W mW mW/C C/W C
OFF CHARACTERISTICS
Reverse Breakdown Voltage (IBR = 100 Adc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) Forward Voltage (IF = 10 mAdc) Diode Capacitance (VR = 0 Vdc, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina V(BR) IR VF CD trr 100 25 5.0 1000 4.0 4.0 Vdc nAdc mAdc mVdc pF ns
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
5147
MMSD914T1
820 +10 V 2k 100 H 0.1 F DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) IF 0.1 F tr 10% tp t IF trr t
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr
100
10 TA = 150C
I R, REVERSE CURRENT ( A)
1.0
TA = 125C
10 TA = 85C TA = 40C
0.1
TA = 85C
1.0 TA = 25C
0.1 0.2
0.4
0.6
0.8
1.0
1.2
0.001
10
20
30
40
50
0.64
0.60
0.56
0.52
Figure 4. Capacitance
5148
MOTOROLA
MPN3404
SILICON PIN SWITCHING DIODE
1 2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Power Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR PD TJ Tstg Value 20 400 4.0 +125 55 to +150 Unit Vdc mW mW/C C C
5149
MPN3404
TYPICAL CHARACTERISTICS
1.8 R S , SERIES RESISTANCE (OHMS) I F , FORWARD CURRENT (mA) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 0.5 0.6 0.7 0.8 0.9 1.0 50
40
30 TA = 25C 20
10
2.0
4.0
6.0
8.0
10
12
14
VR = 15 Vdc
+20
+60
+100
+140
5150
MOTOROLA
MSD6100
Anode 1
2 Anode
1 2 3
3 Cathode
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25C, Derate above 25C 8.0 mW/C, TJ = 65 to +150C, JC = 125C/W.
5151
MSD6100
TYPICAL CHARACTERISTICS
Curves Applicable to Each Anode
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (A) 10 TA = 150C TA = 85C 10 TA = 40C 1.0 TA = 125C
0.1
TA = 85C
1.0
TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
0.9
0.8
0.7
0.6
Figure 3. Capacitance
5152
MOTOROLA
MSD6150
3 Anode
1 2 3
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25C, Derate above 8.0 mW/C, PD = 10 W @ TC = 25C, Derate above 80 mW/C, TJ, Tstg = 55 to +150C, JC = 12.5C/W, JA = 125C.
5153
MSD6150
TYPICAL CHARACTERISTICS
Curves Applicable to Each Cathode
100 IF, FORWARD CURRENT (mA) IR , REVERSE CURRENT (A) 10 TA = 150C TA = 85C 10 TA = 40C 1.0 TA = 125C
0.1
TA = 85C
1.0
TA = 25C
0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2
1.5
1.25
1.0
0.75
Figure 3. Capacitance
5154
MOTOROLA
MV104
DUAL VOLTAGE VARIABLE CAPACITANCE DIODE
1 2
Pin 1 A1 Pin 2
Pin 3 A2 C
CT, Diode Capacitance VR = 3.0 Vdc, f = 1.0 MHz pF Device MV104 Min 37 Max 42
Q, Figure of Merit VR = 3.0 Vdc f = 100 MHz Min 100 Typ 140
CR, Capacitance Ratio C3/C30 f = 1.0 MHz Min 2.5 Max 2.8
REV 1
5155
MV104
TYPICAL CHARACTERISTICS (Each Diode)
100 CT , DIODE CAPACITANCE (pF) 70 Q, FIGURE OF MERIT 450 550
40
350
250
20
150
10 0.3
0.5
1.0
2.0
3.0
5.0 7.0 10
20
30
50
3.0
6.0
9.0
12
15
18
21
24
27
30
VR = 2.0 V 4.0 V
1.01 1.00 0.99 0.98 0.97 0.96 75 50 25 0 +25 +50 +75 +100 +125 NORMALIZED to CT at TA = 25C 30 V
200 100 50 20 10
20
30
50
70
100
200 300
f, FREQUENCY (MHz)
TA = 125C
TA = 75C
TA = 25C
5.0
10
15
20
25
30
5156
MOTOROLA
2 Anode
1 Cathode
2
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 10 Vdc, TA = 25C) Series Inductance (f = 250 MHz, Lead Length 1/16) Case Capacitance (f = 1.0 MHz, Lead Length 1/16) CT, Diode Capacitance VR = 2.0 Vdc, f = 1.0 MHz pF Device MV1403 MV1404 MV1405 Min 140 96 200 Nom 175 120 250 Max 210 144 300 Value 12 250 400 2.67 +125 65 to + 200 Unit Vdc mAdc mW mW/C C C
1
Q, Figure of Merit VR = 2.0 Vdc, f = 1.0 MHz Min 200 200 200
TR, Tuning Ratio C1/C10 f = 1.0 MHz Min C2/C10 f = 1.0 MHz Min 10 10 10
5157
TA = 25C f = 1 MHz
100 50 30 20 10 0
10
VR = 2 Vdc 100
10
20 5 10 f, FREQUENCY (MHz)
50
100
5158
MOTOROLA
2 Anode
1 Cathode
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Device Dissipation @ TA = 25C Derate above 25C Junction Temperature Storage Temperature Range Symbol VR IF PD TJ Tstg Characteristic Reverse Breakdown Voltage (IR = 10 Adc) Reverse Voltage Leakage Current (VR = 15 Vdc, TA = 25C) Series Inductance (f = 250 MHz, Lead Length 1/16) Case Capacitance (f = 1.0 MHz, Lead Length 1/16) CT, Diode Capacitance VR = 4.0 Vdc, f = 1.0 MHz pF Device MV1626 MV1628 MV1630 MV1634 MV1638 MV1648 MV1650 Min 10.8 13.5 16.2 19.8 29.7 73.8 90.0 Nom 12.0 15.0 18.0 22.0 33.0 82.0 100.0 Max 13.2 16.5 19.8 24.2 36.3 90.2 110.0 Value 20 250 400 2.67 +175 65 to + 200 Unit Vdc mAdc mW mW/C C C
Q, Figure of Merit VR = 4.0 Vdc, f = 50 MHz Typ 300 250 250 250 200 150 150
TR, Tuning Ratio C2/C20 f = 1.0 MHz Min 2.0 2.0 2.0 2.0 2.0 2.0 2.0 Max 3.2 3.2 3.2 3.2 3.2 3.2 3.2
5159
MOTOROLA
MV7005T1
Motorola Preferred Device
2 3
1 ANODE
2, 4 CATHODE
MAXIMUM RATINGS
Rating Reverse Voltage Forward Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Junction Temperature Storage Temperature Range 1. FR-4 board, 0.0625 in2, 2 oz. copper. Symbol VR IF PD TJ Tstg Value 15 50 800 6.4 +125 55 to +125 Unit Vdc mAdc mW mW/C C C
DEVICE MARKING
MV7005T1 = V7005
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
5160
MV7005T1
TYPICAL CHARACTERISTICS
CT , DIODE CAPACITANCE (NORMALIZED) 1000 CT , DIODE CAPACITANCE (pF) 500 1.06 VR = 1.0 Vdc 1.04 1.02 1.00 0.98 0.96 0.94 50 VR = 9.0 Vdc
100
25
+25
+50
+75
+100
+125
10 5 3
10
20
5161
MOTOROLA
MV7404T1
Motorola Preferred Device
SOT223 PACKAGE HIGH TUNING RATIO VOLTAGE VARIABLE SURFACE MOUNT DIODE
2 3
DEVICE MARKING
MV7404T1 = V7404
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
5162
MV7404T1
TYPICAL CHARACTERISTICS
C T , DIODE CAPACITANCE (NORMALIZED) 500 C T , DIODE CAPACITANCE (pF) 200 100 50 TA = 25C f = 1 MHz 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 50 25 0 25 50 75 100 125 150 VR = 2 Vdc f = 1.0 MHz
20 10 5
10
VR = 2 Vdc 100
10
20 5 10 f, FREQUENCY (MHz)
50
100
5163
5164
Section 6
Tape and Reel Specifications and Packaging Specifications
Use the standard device title and add the required suffix as listed in the option table on the following page. Note that the individual reels have a finite number of devices depending on the type of product contained in the tape. Also note the minimum lot size is one full reel for each line item, and orders are required to be in increments of the single reel quantity.
SOD123
8 mm
SOT223
12 mm
SO14, 16
16 mm
SC70ML/SOT363 T2 ORIENTATION
8 mm
DIRECTION OF FEED
Package SC59 SC70/SOT323 SO14 SO16 SOD123 SOT23 SOT223 SC70ML/SOT363 TSOP6
K t D
P0 P2
B1
K0 See Note 1
For Machine Reference Only Including Draft and RADII Concentric Around B0
User Direction of Feed * Top Cover Tape Thickness (t1) 0.10 mm (.004) Max.
Bar Code Label R Min Tape and Components Shall Pass Around Radius R Without Damage Bending Radius 10 Maximum Component Rotation 100 mm (3.937) Embossed Carrier
Embossment 1 mm Max
Typical Component Cavity Center Line Tape 1 mm (.039) Max Typical Component Center Line
250 mm (9.843)
DIMENSIONS
Tape Size 8 mm 12 mm 16 mm 24 mm B1 Max 4.55 mm (.179) 8.2 mm (.323) 12.1 mm (.476) 20.1 mm (.791) D 1.5 + 0.1 mm 0.0 ( 0 9 + .004 (.059 004 0.0) D1 1.0 Min (.039) 1.5 mm Min (.060) E 1.75 0.1 mm (.069 .004) F 3.5 0.05 mm (.138 .002) 5.5 0.05 mm (.217 .002) 7.5 0.10 mm (.295 .004) 11.5 0.1 mm (.453 .004) K 2.4 mm Max (.094) 6.4 mm Max (.252) 7.9 mm Max (.311) 11.9 mm Max (.468) P0 4.0 0.1 mm (.157 .004) P2 2.0 0.1 mm (.079 .002) R Min 25 mm (.98) 30 mm (1.18) T Max 0.6 mm (.024) W Max 8.3 mm (.327) 12 .30 mm (.470 .012) 16.3 mm (.642) 24.3 mm (.957)
Metric dimensions govern English are in parentheses for reference only. NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max., NOTE 1: the component cannot rotate more than 10 within the determined cavity. NOTE 2: If B1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders. NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 5.123.
Full Radius
Size 8 mm 12 mm 16 mm 24 mm
G 8.4 mm + 1.5 mm, 0.0 (.33 + .059, 0.00) 12.4 mm + 2.0 mm, 0.0 (.49 + .079, 0.00) 16.4 mm + 2.0 mm, 0.0 (.646 + .078, 0.00) 24.4 mm + 2.0 mm, 0.0 (.961 + .070, 0.00)
Reel Dimensions
Metric Dimensions Govern English are in parentheses for reference only
TO92 EIA, IEC, EIAJ Radial Tape in Fan Fold Box or On Reel
Radial tape in fan fold box or on reel of the reliable TO92 package are the best methods of capturing devices for automatic insertion in printed circuit boards. These methods of taping are compatible with various equipment for active and passive component insertion. Available in Fan Fold Box Available on 365 mm Reels Accommodates All Standard Inserters Allows Flexible Circuit Board Layout 2.5 mm Pin Spacing for Soldering EIA468, IEC 2862, EIAJ RC1008B
Ordering Notes: When ordering radial tape in fan fold box or on reel, specify the style per Figures 3 through 8. Add the suffix RLR and Style to the device title, i.e. MPS3904RLRA. This will be a standard MPS3904 radial taped and supplied on a reel per Figure 9. Fan Fold Box Information Order in increments of 2000. Reel Information Order in increments of 2000.
Packaging Specifications 65
H2B
H2B
H W2 H4 H5 L1 L F1 F2 P2 P1 P P2 D H1 W1 W T T2 T1
Item Tape Feedhole Diameter Component Lead Thickness Dimension Component Lead Pitch Bottom of Component to Seating Plane Feedhole Location Deflection Left or Right Deflection Front or Rear Feedhole to Bottom of Component Feedhole to Seating Plane Defective Unit Clipped Dimension Lead Wire Enclosure Feedhole Pitch Feedhole Center to Center Lead First Lead Spacing Dimension Adhesive Tape Thickness Overall Taped Package Thickness Carrier Strip Thickness Carrier Strip Width Adhesive Tape Width Adhesive Tape Position
Min
0.1496 0.015 0.0945 .059 0.3346 0 0 0.7086 0.610 0.3346 0.09842 0.4921 0.2342 0.1397 0.06 0.014 0.6889 0.2165 .0059
Max
4.2 0.51 2.8 4.0 9.5 1.0 1.0 19.5 16.5 11 12.9 6.75 3.95 0.20 1.44 0.65 19 6.3 0.5
0.1653 0.020 0.110 .156 0.3741 0.039 0.051 0.768 0.649 0.433 0.5079 0.2658 0.1556 0.08 0.0567 0.027 0.7481 0.2841 0.01968
NOTES:
1. Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. Component lead to tape adhesion must meet the pull test requirements established in Figures 5, 6 and 7. 4. Maximum noncumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than 1 consecutive missing component is permitted. 7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes.
Packaging Specifications 66
FLAT SIDE
Style M fan fold box is equivalent to styles E and F of reel pack dependent on feed orientation from box.
The component shall not pull free with a 300 gram load applied to the leads for 3 1 second.
Figure 2. Style M
HOLDING FIXTURE
CARRIER STRIP
CARRIER STRIP
330 mm 13 MAX
252 mm 9.92 MAX
ROUNDED SIDE OF TRANSISTOR AND ADHESIVE TAPE VISIBLE. Style P fan fold box is equivalent to styles A and B of reel pack dependent on feed orientation from box.
58 mm
2.28 MAX
Figure 3. Style P
HOLDING FIXTURE
HOLDING FIXTURE There shall be no deviation in the leads and no component leads shall be pulled free of the tape with a 500 gram load applied to the component body for 3 1 second.
The component shall not pull free with a 70 gram load applied to the leads for 3 1 second.
Figure 5. Test #1
Figure 6. Test #2
Figure 7. Test #3
Packaging Specifications 67
HUB RECESS 76.2mm 1mm RECESS DEPTH 9.5mm MIN 365mm + 3, 0mm 38.1mm 1mm 48 mm MAX
Material used must not cause deterioration of components or degrade lead solderability
ADHESIVE TAPE ON REVERSE SIDE CARRIER STRIP ADHESIVE TAPE ROUNDED SIDE CARRIER STRIP FLAT SIDE
FEED
FEED
Flat side of transistor and carrier strip visible (adhesive tape on reverse side).
Figure 9. Style A
ADHESIVE TAPE ON REVERSE SIDE CARRIER STRIP FLAT SIDE ADHESIVE TAPE CARRIER STRIP ROUNDED SIDE
FEED
FEED
Rounded side of transistor and carrier strip visible (adhesive tape on reverse side).
Packaging Specifications 68
Section 7
Surface Mount Information
In Brief . . .
Surface Mount Technology is now being utilized to offer answers to many problems that have been created in the use of insertion technology. Limitations have been reached with insertion packages and PC board technology. Surface Mount Technology offers the opportunity to continue to advance the stateoftheart designs that cannot be accomplished with insertion technology. Surface Mount Packages allow more optimum device performance with the smaller Surface Mount Configuration. Internal lead lengths, parasitic capacitance and inductance that placed limitations on chip performance have been reduced. The lower profile of Surface Mount Packages allows more boards to be utilized in a given amount of space. They are stacked closer together and utilize less total volume than insertion populated PC boards. Printed circuit costs are lowered with the reduction of the number of board layers required. The elimination or reduction of the number of plated through holes in the board contribute significantly to lower PC board prices. Surface Mount assembly does not require the preparation of components that is common on insertion technology lines. Surface Mount components are sent directly to the assembly line, eliminating an intermediate step. Automatic placement equipment is available that can place Surface Mount components at the rate of a few thousand per hour to hundreds of thousands of components per hour. Surface Mount Technology is cost effective, allowing the manufacturer the opportunity to produce smaller units and offer increased functions with the same size product.
The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device. For example, for a SOT223 device, PD is calculated as follows. PD = 150C 25C = 800 milliwatts 156C/W The 156C/W for the SOT223 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 800 milliwatts. There are other alternatives to achieving higher power dissipation from the surface mount packages. One is to increase the area of the drain/collector pad. By increasing the area of the drain/collector pad, the power dissipation can be increased.
140
80 0.0
Figure 1. Thermal Resistance versus Drain Pad Area for the SOT223 Package (Typical)
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and soldering should be 100C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. The soldering temperature and time should not exceed 260C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used since the use of forced cooling will increase the temperature gradient and will result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
STEP 5 HEATING ZONES 4 & 7 SPIKE 170C STEP 6 VENT STEP 7 COOLING 205 TO 219C PEAK AT SOLDER JOINT
100C 100C
140C
TMAX
SC59
SOT23
0.075
1.9
1.4
SC70/SOT323
SOT 416/SC90
0.091 2.3
0.248 6.3
0.275 7.0
SOT223
SO14, SO16
mm
0.65
0.5 1
0.060 1.52
0.155 4.0
0.050 1.270
inches
mm inches
1.9 mm
SOD123
0.094 2.4
0.037 0.95 0.074 1.9 0.037 0.95 0.028 0.7 0.039 1.0 inches mm
TSOP6
0.65 mm 0.65 mm
Section 8
Package Outline Dimensions
In Brief . . .
The following pages contain information on the various packages referenced on the individual data sheets. Information includes: a picture of the package, dimensions in both millimeters and inches, the various pinout configurations (styles), a cross reference for case numbers, old JEDEC TO numbers, the new JEDEC TO designation, and footprint dimensions for surface mount packages to assist in board layout.
L K
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 21: PIN 1. COLLECTOR 2. EMITTER 3. BASE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 22: PIN 1. SOURCE 2. GATE 3. DRAIN INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43
X X G H V
1
D J C SECTION XX N N
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE
STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2
STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER
STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 30: PIN 1. DRAIN 2. GATE 3. SOURCE
R P F L
B
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 0.250 0.080 0.105 0.100 0.135 0.135 MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 6.35 2.04 2.66 2.54 3.43 3.43
K
DIM A B C D F G H J K L N P R V
X X G H V
1 2 3
D J SECTION XX
N C
B
NOTES: 1. PACKAGE CONTOUR OPTIONAL WITHIN DIA B AND LENGTH A. HEAT SLUGS, IF ANY, SHALL BE INCLUDED WITHIN THIS CYLINDER, BUT SHALL NOT BE SUBJECT TO THE MIN LIMIT OF DIA B. 2. LEAD DIA NOT CONTROLLED IN ZONES F, TO ALLOW FOR FLASH, LEAD FINISH BUILDUP, AND MINOR IRREGULARITIES OTHER THAN HEAT SLUGS. MILLIMETERS MIN MAX 5.84 7.62 2.16 2.72 0.46 0.56 1.27 25.40 38.10 INCHES MIN MAX 0.230 0.300 0.085 0.107 0.018 0.022 0.050 1.000 1.500
D K F A F K
DIM A B D F K
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIM K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.050 BSC 0.100 BSC 0.014 0.016 0.500 0.250 0.080 0.105 0.050 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.49 0.41 0.56 0.407 0.482 1.27 BSC 3.54 BSC 0.36 0.41 12.70 6.35 2.03 2.66 1.27 2.93 3.43
SEATING PLANE
R D K L
X X D G H V C N
SECTION XX
A L
3
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
B S
1 2
G C D H K J
DIM A B C D G H J K L S V
INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236
MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
A L
3 2 1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D G H J K L S MILLIMETERS MIN MAX 2.70 3.10 1.30 1.70 1.00 1.30 0.35 0.50 1.70 2.10 0.013 0.100 0.09 0.18 0.20 0.60 1.25 1.65 2.50 3.00 INCHES MIN MAX 0.1063 0.1220 0.0512 0.0669 0.0394 0.0511 0.0138 0.0196 0.0670 0.0826 0.0005 0.0040 0.0034 0.0070 0.0079 0.0236 0.0493 0.0649 0.0985 0.1181
D G
C H K
A F
NOTES: 3. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 4. CONTROLLING DIMENSION: INCH.
S
1 2 3
D L G J C 0.08 (0003) H M K
INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287
MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30
STYLE 1: PIN 1. 2. 3. 4.
STYLE 2: PIN 1. 2. 3. 4.
STYLE 3: PIN 1. 2. 3. 4.
A L
6 5 1 2 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L M S MILLIMETERS MIN MAX 2.90 3.10 1.30 1.70 0.90 1.10 0.25 0.50 0.85 1.05 0.013 0.100 0.10 0.26 0.20 0.60 1.25 1.55 0_ 10 _ 2.50 3.00 INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181
S
3
D G M 0.05 (0.002) H C K J
STYLE 1: PIN 1. 2. 3. 4. 5. 6.
A L
3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40
S
1 2
V G
C 0.05 (0.002)
R N K
DIM A B C D G H J K L N R S V
A G V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K N S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40
S
1 2 3
D 6 PL
0.2 (0.008)
N J C
STYLE 1: PIN 1. 2. 3. 4. 5. 6.
STYLE 6: PIN 1. 2. 3. 4. 5. 6.
C H
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.004 0.000 0.004 0.006 0.140 0.152 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 0.00 0.10 0.15 3.55 3.85
D 3 PL 0.20 (0.008)
E J
STYLE 1: PIN 1. CATHODE 2. ANODE
A S
2 3 1 M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.80 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.031 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC
G B
B K
0.20 (0.008) A
C L H
STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE
14
B
1 7
NOTES: 1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION. 2. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 3. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 4. ROUNDED CORNERS OPTIONAL. DIM A B C D F G H J K L M N INCHES MIN MAX 0.715 0.770 0.240 0.260 0.145 0.185 0.015 0.021 0.040 0.070 0.100 BSC 0.052 0.095 0.008 0.015 0.115 0.135 0.300 BSC 0_ 10_ 0.015 0.039 MILLIMETERS MIN MAX 18.16 19.56 6.10 6.60 3.69 4.69 0.38 0.53 1.02 1.78 2.54 BSC 1.32 2.41 0.20 0.38 2.92 3.43 7.62 BSC 0_ 10_ 0.39 1.01
A F C N H G D
SEATING PLANE
J K M
A
16 9
B
1 8
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. DIM A B C D F G H J K L M S INCHES MIN MAX 0.740 0.770 0.250 0.270 0.145 0.175 0.015 0.021 0.040 0.70 0.100 BSC 0.050 BSC 0.008 0.015 0.110 0.130 0.295 0.305 0_ 10 _ 0.020 0.040 MILLIMETERS MIN MAX 18.80 19.55 6.35 6.85 3.69 4.44 0.39 0.53 1.02 1.77 2.54 BSC 1.27 BSC 0.21 0.38 2.80 3.30 7.50 7.74 0_ 10 _ 0.51 1.01
F S
T H G D
16 PL
SEATING PLANE
J T A
M
0.25 (0.010)
A
14 8
B
1 7
P 7 PL 0.25 (0.010)
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION.
G C
R X 45 _
T
SEATING PLANE
D 14 PL 0.25 (0.010)
M
K T B
S
M A
S
DIM A B C D F G J K M P R
MILLIMETERS MIN MAX 8.55 8.75 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50
INCHES MIN MAX 0.337 0.344 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.228 0.244 0.010 0.019
A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019
16
B
1 8
8 PL
0.25 (0.010)
G F
K C T
SEATING PLANE
X 45 _
M D
16 PL M
0.25 (0.010)
T B
DIM A B C D F G J K M P R
Section 9
Reliability and Quality Assurance
In Brief . . .
This Reliability and Quality Assurance section contains information on the measurement of outgoing quality, reliability data analysis, reliability stress test descriptions with the applicable MILSTD methods, statistical process control techniques, and quality assurance processing.
OUTGOING QUALITY
The Average Outgoing Quality (AOQ) refers to the number of devices per million that are outside the specification limits at the time of shipment. Motorola has established Six Sigma goals to improve its outgoing quality and will continue its error free performance focus to achieve its goal of zero parts per million (PPM) outgoing quality. Motorolas present quality level has lead to vendor certification programs with many of its customers. These programs ensure a level of quality which allows the customer either to reduce or eliminate the need for incoming inspections.
where: = failure rate 2 = chisquare function = (100 confidence level) / 100 d.f. = degrees of freedom = 2r + 2 r = number of failures t = device hours Chisquare values for 60% and 90% confidence intervals for up to 12 failures are shown in Table 11. Table 11 ChiSquare Table
ChiSquare Distribution Function 60% Confidence Level 90% Confidence Level No. Fails 0 1 2 3 4 5 6 7 8 9 10 11 12 2 Quantity 4.605 7.779 10.645 13.362 15.987 18.549 21.064 23.542 25.989 28.412 30.813 33.196 35.563
No. Fails 0 1 2 3 4 5 6 7 8 9 10 11 12
2 Quantity 1.833 4.045 6.211 8.351 10.473 12.584 14.685 16.780 18.868 20.951 23.031 25.106 27.179
D Process Average =
Total Projected Reject Devices Total Number of Devices Defects in Sample Sample Size
D Lot Size
D Total Number of Devices = Sum of units in each submitted lot D Probability of Acceptance = 1
Number of Lots Rejected Number of Lots Tested
The failure rate of semiconductor devices is inherently low. As a result, the industry uses a technique called accelerated testing to assess the reliability of semiconductors. During accelerated tests, elevated stresses are used to produce, in a short period, the same failure mechanisms as would be observed under normal use conditions. The objective of this testing is to identify these failure mechanisms and eliminate them as a cause of failure during the useful life of the product. Temperature, relative humidity, and voltage are the most frequently used stresses during accelerated testing. Their relationship to failure rates has been shown to follow an Eyring type of equation of the form: = A exp(kT) exp(B/RH) exp(CE) Where A, B, C, , and k are constants, more specifically B, C, and are numbers representing the apparent energy at which various failure mechanisms occur. These are called activation energies. T is the temperature, RH is the relative humidity, and E is the electric field. The most familiar form of this equation (shown on following page) deals with the first exponential term that shows an Arrhenius type relationship of the failure rate versus the junction temperature of semiconductors. The junction temperature is related to the ambient temperature through the thermal resistance and power dissipation. Thus, we can test devices near their maximum junction temperatures, analyze the failures to assure that they are the types that are accelerated by temperature and then by applying known acceleration factors, estimate the failure rates for lower junction. The table on the following page shows observed activation energies with references.
Table 12 Time Dependent Failure Mechanisms in Semiconductor Devices (Applicable to Discrete and Integrated Circuits)
Device Association Silicon Oxide SiliconSilicon Oxide Interface Relevant Factors Mobile Ions E/V, T Accelerating Factors T, V 1.0 Typical Activation Energy in eV
Reference 1A 2
Oxide Pinholes
E/V, T
E, T
0.71.0 (Bipolar) 1.0 (Bipolar) 0.30.4 (MOS) 0.3 (MOS) 0.8 (MOS) EPROM 1.0 Large grain Al (glassivated) 0.5 Small grain Al 0.7 CuAl/CuSiAl (sputtered)
18 5 3 4 11
E/V, T
E, T
E, T
E, T
Metallization
Electromigration
T, J
J, T
Nanda, et al.
Grain Size
Black, J.R.
Doping
Black, J.R.
12
Corrosion Chemical Galvanic Electrolytic Bond and Other Mechanical Interfaces Various Water Fab, Assembly, and Silicon Defects Intermetallic Growth Metal Scratches Mask Defects, etc. Silicon Defects
Contamination
H, E/V, T
Lycoudes, N.E.
Fitch, W.T
T, V
0.50.7 eV 0.5 eV
10 13
THERMAL RESISTANCE
Circuit performance and longterm circuit reliabiity are affected by die temperature. Normally, both are improved by keeping the junction temperatures low. Electrical power dissipated in any semiconductor device is a source of heat. This heat source increases the temperature of the die about some reference point, normally the ambient temperature of 25C in still air. The temperature increase, then, depends on the amount of power dissipated in the circuit and on the net thermal resistance between the heat source and the reference point. The temperature at the junction depends on the packaging and mounting systems ability to remove heat generated in the circuit from the junction region to the ambient environment. The basic formula for converting power dissipation to estimated junction temperature is: (1) TJ = TA + PD (JC + CA) or TJ = TA + PD (JA) (2) where: TJ = maximum junction temperature TA = maximum ambient temperature PD = calculated maximum power dissipation, including effects of external loads when applicable JC = average thermal resistance, junction to case CA = average thermal resistance, case to ambient JA = average thermal resistance, junction to ambient This Motorola recommended formula has been approved by RADC and DESC for calculating a practical maximum operating junction temperature for MILM38510 devices. Only two terms on the right side of equation (1) can be varied by the user, the ambient temperature and the device casetoambient thermal resistance, CA. (To some extent the device power dissipation can also be controlled, but under recommended use the supply voltage and loading dictate a
fixed power dissipation.) Both system air flow and the package mounting technique affect the CA thermal resistance term. JC is essentially independent of air flow and external mounting method, but is sensitive to package material, die bonding method, and die area. For applications where the case is held at essentially a fixed temperature by mounting on a large or temperature controlled heat sink, the estimated junction temperature is calculated by: TJ = TC + PD (JC) (3) where TC = maximum case temperature and the other parameters are as previously defined.
AIR FLOW
Air flow over the packages (due to a decrease in JC) reduces the thermal resistance of the package, therefore permitting a corresponding increase in power dissipation without exceeding the maximum permissible operating junction temperature. For thermal resistance values for specific packages, see the Motorola Data Book or Design Manual for the appropriate device family or contact your local Motorola sales office.
ACTIVATION ENERGY
Determination of activation energies is accomplished by testing randomly selected samples from the same population at various stress levels and comparing failure rates due to the same failure mechanism. The activation energy is represented by the slope of the curve relating to the natural logarithm of the failure rate to the various stress levels. In calculating failure rates, the comprehensive method is to use the specific activation energy for each failure mechanism applicable to the technology and circuit under consideration. A common alternative method is to use a single activation energy value for the expected failure mechanism(s) with the lowest activation energy.
MECHANICAL SHOCK
This test is used to determine the ability of the device to withstand a sudden change in mechanical stress due to abrupt changes in motion as seen in handling, transportation, or actual use. Typical Test Conditions: Acceleration = 1500 gs, Orientation = X1, Y1, Y2 plane, t = 0.5 msec, Blows = 5 Common Failure Modes: Open, short, excessive leakage, mechanical failure Common Failure Mechanisms: Die and wire bonds, cracked die, package defects Military Reference: MILSTD750, Method 2015
MOISTURE RESISTANCE
The purpose of this test is to evaluate the moisture resistance of components under temperature/humidity conditions typical of tropical environments. Typical Test Conditions: TA = 10C to 65C, rh = 80% to 98%, t = 24 hours/cycles, cycle = 10 Common Failure Modes: Parametric shifts in leakage and mechanical failure Common Failure Mechanisms: Corrosion or contaminants on or within the package materials. Poor package sealing Military Reference: MILSTD750, Method 1021
SOLDERABILITY
The purpose of this test is to measure the ability of the device leads/terminals to be soldered after an extended period of storage (shelf life). Typical Test Conditions: Steam aging = 8 hours, Flux = R, Solder = Sn60, Sn63 Common Failure Modes: Pin holes, dewetting, nonwetting Common Failure Mechanisms: Poor plating, contaminated leads Military Reference: MILSTD750, Method 2026
SOLDER HEAT
This test is used to measure the ability of a device to withstand the temperatures as may be seen in wave soldering operations. Electrical testing is the endpoint critierion for this stress. Typical Test Conditions: Solder Temperature = 260C, t = 10 seconds Common Failure Modes: Parameter shifts, mechanical failure Common Failure Mechanisms: Poor package design Military Reference: MILSTD750, Method 2031
6 5 4 3 2 1 0
2 3 4
5 6
Standard Deviations From Mean Distribution Centered At 3 2700 ppm defective 99.73% yield At 4 63 ppm defective 99.9937% yield At 5 0.57 ppm defective 99.999943% yield At 6 0.002 ppm defective 99.9999998% yield Distribution Shifted 1.5 66810 ppm defective 93.32% yield 6210 ppm defective 99.379% yield 233 ppm defective 99.9767% yield 3.4 ppm defective 99.99966% yield
Figure 1. AOQL and Yield from a Normal Distribution of Product With 6 Capability To better understand SPC principles, brief explanations have been provided. These cover process capability, implementation, and use.
PROCESS CAPABILITY
One goal of SPC is to ensure a process is CAPABLE. Process capability is the measurement of a process to produce products consistently to specification requirements. The purpose of a process capability study is to separate the inherent RANDOM VARIABILITY from ASSIGNABLE CAUSES. Once completed, steps are taken to identify and eliminate the most significant assignable causes. Random variability is generally present in the system and does not fluctuate. Sometimes, the random variability is due to basic limitations associated with the machinery, materials, personnel skills, or manufacturing methods. Assignable cause inconsistencies relate to time variations in yield, performance, or reliability. Traditionally, assignable causes appear to be random due to the lack of close examination or analysis. Figure 2 shows the impact on predictability that assignable cause can have. Figure 3 shows the difference between process control and process capability. A process capability study involves taking periodic samples from the process under controlled conditions. The performance characteristics of these samples are charted against time. In time, assignable causes can be identified and engineered out. Careful documentation of the process is the key to accurate diagnosis and successful removal of the assignable causes. Sometimes, the assignable causes will remain unclear, requiring prolonged experimentation. Elements which measure process variation control and capability are Cp and Cpk, respectively. Cp is the specification width divided by the process width or Cp = (specification width) / 6. Cpk is the absolute value of the closest specification value to the mean, minus the mean, divided by half the process width or Cpk = closest specification X/3.
PREDICTION In control assignable causes eliminated TIME TIME SIZE Out of control (assignable causes present) SIZE
Process under control all assignable causes are removed and future distribution is predictable.
? ? ? ? ? ? ? ? ? ? PREDICTION ?
TIME SIZE
SIZE
Figure 2. Impact of Assignable Causes on Process Predictable At Motorola, for critical parameters, the process capability is acceptable with a Cpk = 1.50 with continual improvement our goal. The desired process capability is a Cpk = 2 and the ideal is a Cpk = 5. Cpk, by definition, shows where the current production process fits with relationship to the specification limits. Off center distributions or excessive process variability will result in less than optimum conditions.
Figure 3. Difference Between Process Control and Process Capability be collected at appropriate time intervals to detect variations in the process. As the process begins to show improved stability, the interval may be increased. The data collected must be carefully documented and maintained for later correlation. Examples of common documentation entries are operator, machine, time, settings, product type, etc. Once the plan is established, data collection may begin. The data collected with generate X and R values that are plotted with respect to time. X refers to the mean of the values within a given subgroup, while R is the range or greatest value minus least value. When approximately 20 or more X and R values have been generated, the average of these values is computed as follows: X = (X + X2 + X3 + . . .)/K R = (R1 + R2 + R2 + . . .)/K where K = the number of subgroups measured. The values of X and R are used to create the process control chart. Control charts are the primary SPC tool used to signal a problem. Shown in Figure 4, process control charts show X and R values with respect to time and concerning reference to upper and lower control limit values. Control limits are computed as follows: R upper control limit = UCLR = D4 R R lower control limit = LCLR = D3 R X upper control limit = UCLX = X + A2 R X lower control limit = LCL X = X A2 R
154 153 152 151 150 149 148 147 LCL = 148.0 X = 150.4 UCL = 152.8
7 6 5 4 3 2 1 0
Where D4, D3, and A2 are constants varying by sample size, with values for sample sizes from 2 to 10 shown in the following partial table:
n D4 D3 2 3.27 * 3 2.57 * 4 2.28 * 5 2.11 * 6 2.00 * 7 1.92 0.08 8 1.86 0.14 9 1.82 0.18 10 1.78 0.22
A2 1.88 1.02 0.73 0.58 0.48 0.42 0.37 0.34 0.31 *For sample sizes below 7, the LCLR would technically be a negative number; in those cases there is no lower control limit; this means that for a subgroup size 6, six identical measurements would not be unreasonable.
Control charts are used to monitor the variability of critical process parameters. The R chart shows basic problems with piece to piece variability related to the process. The X chart can often identify changes in people, machines, methods, etc. The source of the variability can be difficult to find and may require experimental design techniques to identify assignable causes. Some general rules have been established to help determine when a process is OUTOFCONTROL. Figure 5 shows a control chart subdivided into zones A, B, and C corresponding to 3 sigma, 2 sigma, and 1 sigma limits respectively. In Figures 6 through 9 four of the tests that can be used to identify excessive variability and the presence of assignable causes are shown. As familiarity with a given process increases, more subtle tests may be employed successfully. Once the variability is identified, the cause of the variability must be determined. Normally, only a few factors have a significant impact on the total variability of the process. The importance of correctly identifying these factors is stressed in the following example. Suppose a process variability depends on the variance of five factors A, B, C, D, and E. Each has a variance of 5, 3, 2, 1, and 0.4, respectively. Since:
tot = tot =
A2 + B2 + C2 + D2 + E2 52 + 32 + 22 + 12 +(0.4)2 = 6.3
If only D is identified and eliminated, then: tot = 52 + 32 + 22 + (0.4)2 = 6.2 This results in less than 2% total variability improvement. If B, C, and D were eliminated, then: tot = 52 + (0.4)2 = 5.02 This gives a considerably better improvement of 23%. If only A is identified and reduced from 5 to 2, then: tot = 22 + 32 + 22 + 12 + (0.4)2 = 4.3 Identifying and improving the variability from 5 to 2 yields a total variability improvement of nearly 40%. Most techniques may be employed to identify the primary assignable cause(s). Outofcontrol conditions may be correlated to documented process changes. The product may be analyzed in detail using best versus worst part comparisons or Product Analysis Lab equipment. Multivariance analysis can be used to determine the family of variation (positional, critical, or temporal). Lastly, experiments may be run to test theoretical or factorial analysis. Whatever method is used, assignable causes must be identified and eliminated in the most expeditious manner possible. After assignable causes have been eliminated, new control limits are calculated to provide a more challenging variablility criteria for the process. As yields and variability improve, it may become more difficult to detect improvements because they become much smaller. When all assignable causes have been eliminated and the points remain within control limits for 25 groups, the process is said to in a state of control.
UCL
ZONE A (+ 3 SIGMA) ZONE B (+ 2 SIGMA) ZONE C (+ 1 SIGMA) ZONE C ( 1 SIGMA) ZONE B ( 2 SIGMA) ZONE A ( 3 SIGMA) CENTERLINE
UCL
A B C C B
LCL
LCL
Figure 6. One Point Outside Control Limit Indicating Excessive Variability UCL UCL
A B C C B
A B C C B A
LCL
LCL
Figure 7. Two Out of Three Points in Zone A or Beyond Indicating Excessive Variability
Figure 8. Four Out of Five Points in Zone B or Beyond Indicating Excessive Variability UCL
A B C C B A
LCL
Figure 9. Seven Out of Eight Points in Zone C or Beyond Indicating Excessive Variability
SUMMARY
Motorola is committed to the use of STATISTICAL PROCESS CONTROLS. These principles, used throughout manufacturing have already resulted in many significant improvements to the processes. Continued dedication to the SPC culture will allow Motorola to reach the Six Sigma and zero defect capability goals. SPC will further enhance the commitment to TOTAL CUSTOMER SATISFACTION.
Section 10
Replacement Devices
In Brief . . .
The Replacement Devices index provides you with a list of devices which had been supported with data sheets in the prior edition of the SmallSignal Transistors, FETs and Diodes data book (DL126 Rev 5) but are no longer supported in this new edition. A direct or similar replacement part is listed for those devices which have replacement parts.
REPLACEMENT DEVICES
DEVICE 1N5139 1N5139A 1N5140 1N5140A 1N5141 1N5141A 1N5142 1N5142A 1N5143 1N5143A 1N5144 1N5144A 1N5145 1N5145A 1N5146 1N5146A 1N5147 1N5147A 1N5441A 1N5443A 1N5444A 1N5445A 1N5449A 1N5450A 1N5451A 1N5452A 1N5453A 1N5455A 2N697 2N718A 2N720A 2N930 2N930A 2N956 2N1613 2N1711 2N1893 2N2102 2N2218A 2N2219 2N2219A 2N2222 2N2222A 2N2270 2N2369 2N2369A 2N2484 2N2895 2N2896 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N3019 2N3020 2N3053 REPLACEMENT MV2101 MV2101 MMBV2103LT1 MMBV2103LT1 MMBV2104LT1 MMBV2104LT1 MMBV2105LT1 MMBV2105LT1 MMBV2105LT1 MMBV2105LT1 MMBV2107LT1 MMBV2107LT1 MMBV2108LT1 MMBV2108LT1 MMBV2109LT1 MV2109 MV2111 MV2111 MV2101 MV2103 MV2104 MV2105 MV2108 MV2109 MV2111 MV2111 MV2111 MV2115 MPSA20 MPSA05 MPSA06 MPSA18 MPSA18 MPSA05 2N4410 MPSA05 MPSA06 2N4410 MPS2222A MPS2222A MPS2222A MPS2222 MPS2222A MPSA05 MPS2369 MPS2369A 2N5087 MPSA06 2N5551 MPS2907 MPS2907A MPS2907 MPS2907A MPS2907 MPS2907A MPS2907 MPS2907A MPSA06 MPSA06 MPSA20 DEVICE 2N3053A 2N3244 2N3250 2N3251 2N3251A 2N3467 2N3468 2N3497 2N3500 2N3501 2N3546 2N3634 2N3635 2N3636 2N3637 2N3700 2N3799 2N3947 2N3963 2N3964 2N4014 2N4032 2N4033 2N4036 2N4037 2N4126 2N4265 2N4405 2N4407 2N4931 2N5086 2N5668 2N5669 2N5670 2N6431 2N6433 2N6516 BA582T1 BC107 BC107A BC107B BC108 BC109C BC14010 BC14016 BC14110 BC14116 BC16016 BC16116 BC177 BC177A BC177B BC238 BC309B BC393 BC394 BC450 BC450A BC546A BC559 REPLACEMENT MPSA05 2N4403 2N4403 MPS2907A MPS2907A MPSA56 MPSA56 2N5401 2N5551 2N5551 MPSH17 2N5401 2N5401 MPSA92 MPSA92 MPSA06 MPSA18 MPS2222A MPSA18 MPSA18 MPS2222A MPS2907A MPSA56 MPSA56 MPSA56 MPS4126 2N4264 MPS8599 MPS8599 MPSA92 2N5087 2N3819 2N3819 2N3819 MPSA42 MPSA92 2N6517 MMBV3401LT1 BC237 BC237 BC237 BC3338 MPSW06 MPSW06 MPSW06 MPSW06 MPSW56 MPSW56 BC547 BC547A BC547B BC238B BC308C MPSA92 MPSA42 MPSA92 MPSA92 BC546B BC559B DEVICE BC560B BC849ALT1 BC850ALT1 BC857CLT1 BCY70 BCY71 BCY72 BDB01D BDB02D BDC02D BDC05 BF244A BF244B BF245 BF245A BF245B BF245C BF246A BF246B BF247B BF256B BF256C BF258 BF374 BF391 BF392 BF492 BF493 BFW43 BSP20AT1 BSS71 BSS72 BSS73 BSS74 BSS75 BSS76 BSS89 BSV1610 BSX20 CV12253 IRFD110 IRFD113 IRFD120 IRFD123 IRFD210 IRFD213 IRFD220 IRFD223 IRFD9120 IRFD9123 J111 J113 J203 J300 J305 MAD130P MAD1103P MAD1107P MAD1108P MAD1109P REPLACEMENT BC560C BC848ALT1 BC848ALT1 BC857ALT1 MPS2222A MPS2222A MPS2222A BDB01C BDB02C BDC01D MPSW42 2N3819 2N3819 BF245A BF245A BF245A BF245A BF245A BF245A BF245A BF256A BF256A BF422 BC338 MPSA42 MPSA42 MPSA92 MPSA92 2N5401 BF720T1 MPSA42 MPSA42 MPSA42 MPSA92 MPSA92 MPSA92 BS107 MPS2907A MPS2369A MPSA06 BSS123LT1 MMBF170LT1 BSS123LT1 MMBF170LT1 MMFT107T1 MMFT107T1 MMFT107T1 MMFT107T1 BSS123LT1 2N7002LT1 J111RLRA J113RL1 2N5458 2N5486 MMBF5484LT1 BAS16LT1 BAS16LT1 BAS16LT1 BAS16LT1 BAS16LT1
REPLACEMENT DEVICES
DEVICE MM3001 MM3725 MM4001 MMAD1106 MMBF4856LT1 MMBF4860LT1 MMBF5459LT1 MMBF5486LT1 MMBT8599LT1 MMBV2104LT1 MMPQ3799 MMSV3401T1 MPF970 MPF971 MPF3821 MPF3822 MPF4856 MPF4857 MPF4858 MPF4859 MPF4860 MPF4861 MPQ6501 MPS3638 MPS3866 MPS4123 MPS4125 MPS4258 MPS5771 MPS6520 REPLACEMENT 2N5551 MPS2222A 2N5401 BAS16LT1 MMBF4391LT1 MMBF5457LT1 MMBF5457LT1 2N5486 MMBT5551LT1 MMBV2103LT1 MMPQ3725 MMBV3401LT1 MMBFJ175LT1 MMBFJ175LT1 MMBF5457LT1 MMBF5457LT1 MPF4391RLRA 2N5639 J112 2N5638RLRA 2N5638RLRA J112 MPQ6502 MPS3638A BF224 MPS4124 MPS4126 MPS3640 MPS3640 MPS6521 DEVICE MPS6530 MPS6531 MPS6562 MPS6568A MPS6571 MPS6595 MPS8093 MPSA16 MPSH04 MPSH07A MPSH20 MPSH24 MPSH34 MPSH69 MSA1022BT1 MSB709ST1 MSB710QT1 MSB1218AST1 MSC1621T1 MSC2404CT1 MSD1819AST1 MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MV2103 MV2107 MV2113 REPLACEMENT MPS6530RLRM MPS6530RLRM MPS6651 MPS918 MPSA18 MPS3563 2N4402 MPSA17 MPSH17 MPSH17 MPSH17 MPSH17 MPSH17 MPSH81 MSA1022CT1 MSB709RT1 MSB710RT1 MSB1218ART1 MSD602RT1 MSC2295CT1 MSD1819ART1 MV2101 MMBV2103LT1 MV2108 MV2109 MV2111 MV2111 MMBV2103LT1 MV2108 MV2111 DEVICE MV2114 MVAM108 MVAM109 MVAM115 MVAM125 PBF259 PBF259S PBF259RS PBF493 PBF493R PBF493RS PBF493S VN1706L REPLACEMENT MV2115 MMBV2109LT1 MMBV2109LT1 MMBV2109LT1 MMBV2109LT1 MMBT6517LT1 MMBT6517LT1 MMBT6517LT1 MMBTA92LT1 MMBTA92LT1 MMBTA92LT1 MMBTA92LT1 MMFT107T1
Section 11
Alphanumeric Index
Alphanumeric Index
Device Page Device
BAT54LT1 . . . . . . . . . . . . . . . BAT54SLT1 . . . . . . . . . . . . . . BAT54SWT1 . . . . . . . . . . . . . BAT54T1 . . . . . . . . . . . . . . . . BAT54WT1 . . . . . . . . . . . . . . BAV70LT1 . . . . . . . . . . . . . . . BAV70WT1 . . . . . . . . . . . . . . BAV74LT1 . . . . . . . . . . . . . . . BAV99LT1 . . . . . . . . . . . . . . . BAV99RWT1 . . . . . . . . . . . .
Page
130, 527 130, 529 130, 531 130, 533 130, 535 133, 537 133, 539 133, 542 133, 544 133, 547
Device
Page
1N5148 . . . . . . . . . . . . . 123, 124, 53 1N5148A . . . . . . . . . . . . . . . . . . . . . . . 53 1N5446ARL . . . . . . . . . . . . . . 124, 56 1N5448ARL . . . . . . . . . . . . . . 124, 56 1N5456A . . . . . . . . . . . . 123, 124, 56 2N3903 . . . . . . . . . . . . . . . . . . . 12, 23 2N3904 . . . . . . . . . . . . . . . . . . . 12, 23 2N3905 . . . . . . . . . . . . . . . . . . . 12, 29 2N3906 . . . . . . . . . . . . . . . . . . . 12, 29 2N4123 . . . . . . . . . . . . . . . . . . 12, 214 2N4124 2N4125 2N4264 2N4400 2N4401 2N4402 2N4403 2N4410 2N5087 2N5088 2N5089 2N5209 2N5210 2N5400 2N5401 2N5457 2N5458 2N5460 2N5461 2N5462 2N5484 2N5485 2N5486 2N5550 2N5551 2N5555 2N5639 2N5640 2N6426 2N6427 .................. .................. .................. .................. .................. .................. .................. .................. .................. .................. 12, 214 12, 218 16, 222 12, 227 12, 227 12, 232 12, 232 12, 237 13, 241 13, 247
BC517 . . . . . . . . . . . . . . . . . . . 14, 2111 BC546 . . . . . . . . . . . . . . . . . . 12, 2116 BC546B . . . . . . . . . . . . . . . . . 12, 2116 BC547 . . . . . . . . . . . . . . . . . . 12, 2116 BC547A . . . . . . . . . . . . . . . . . 12, 2116 BC547B . . . . . . . . . . . . . . . . . 12, 2116 BC547C . . . . . . . . . . . . . . . . . 12, 2116 BC548 . . . . . . . . . . . . . . . . . . 12, 2116 BC548A . . . . . . . . . . . . . . . . . 12, 2116 BC548B . . . . . . . . . . . . . . . . . 12, 2116 BC548C . . . . . . . . . . . . . . . . . BC549B . . . . . . . . . . . . . . . . . BC549C . . . . . . . . . . . . . . . . . BC550B . . . . . . . . . . . . . . . . . BC550C . . . . . . . . . . . . . . . . . BC556 . . . . . . . . . . . . . . . . . . BC556B . . . . . . . . . . . . . . . . . BC557 . . . . . . . . . . . . . . . . . . BC557A . . . . . . . . . . . . . . . . . BC557B . . . . . . . . . . . . . . . . . 12, 2116 13, 2120 13, 2120 13, 2120 13, 2120 12, 2123 12, 2123 12, 2123 12, 2123 12, 2123
BAV99WT1 . . . . . . . . . . . . . . 133, 547 BAV170LT1 . . . . . . . . . . . . . . 134, 550 BAV199LT1 . . . . . . . . . . . . . . 134, 552 BAW56LT1 . . . . . . . . . . . . . . 133, 554 BAW56WT1 . . . . . . . . . . . . . 133, 556 BAW156LT1 . . . . . . . . . . . . . 134, 558 BC182 . . . . . . . . . . . . . . . . . . . 12, 279 BC182A . . . . . . . . . . . . . . . . . . . . . . . 279 BC182B . . . . . . . . . . . . . . . . . . . . . . . 279 BC183 . . . . . . . . . . . . . . . . . . . . . . . . 279 BC184 . . . . . . . . . . . . . . . . . . . . . . . . 279 BC212 . . . . . . . . . . . . . . . . . . . 12, 282 BC212B . . . . . . . . . . . . . . . . . . . . . . . 282 BC213 . . . . . . . . . . . . . . . . . . . . . . . . 282 BC214 . . . . . . . . . . . . . . . . . . . . . . . . 282 BC237 . . . . . . . . . . . . . . . . . . . . . . . . 285 BC237A . . . . . . . . . . . . . . . . . . . . . . . 285 BC237B . . . . . . . . . . . . . . . . . . 12, 285 BC237C . . . . . . . . . . . . . . . . . . . . . . . 285 BC238B . . . . . . . . . . . . . . . . . . . . . . . 285 BC238C . . . . . . . . . . . . . . . . . . . . . . . 285 BC239 . . . . . . . . . . . . . . . . . . . 13, 285 BC239C . . . . . . . . . . . . . . . . . . . . . . . 285 BC307 . . . . . . . . . . . . . . . . . . . . . . . . 288 BC307B . . . . . . . . . . . . . . . . . . 12, 288 BC307C . . . . . . . . . . . . . . . . . . . . . . . 288 BC308C . . . . . . . . . . . . . . . . . . . . . . . 288 BC327 . . . . . . . . . . . . . . . . . . . 12, 291 BC32716 . . . . . . . . . . . . . . . . . . . . . 291 BC32725 . . . . . . . . . . . . . . . . . . . . . 291 BC328 . . . . . . . . . . . . . . . . . . . 12, 291 BC32816 . . . . . . . . . . . . . . . . . . . . . 291 BC32825 . . . . . . . . . . . . . . . . . . . . . 291 BC337 . . . . . . . . . . . . . . . . . . . 12, 294 BC33716 . . . . . . . . . . . . . . . . . . . . . 294 BC33725 . . . . . . . . . . . . . . . . . . . . . 294 BC33740 . . . . . . . . . . . . . . . . . . . . . 294 BC338 . . . . . . . . . . . . . . . . . . . 12, 294 BC33816 . . . . . . . . . . . . . . . . . . . . . 294 BC33825 . . . . . . . . . . . . . . . . . . . . . 294 BC33840 . . . . . . . . . . . . . . . . . . . . . 294 BC368 . . . . . . . . . . . . . . . . . . . 14, 297 BC369 . . . . . . . . . . . . . . . . . . . 14, 297 BC372 . . . . . . . . . . . . . . . . . . . . . . . . 299 BC373 . . . . . . . . . . . . . . . . . . . 14, 299 BC489 . . . . . . . . . . . . . . . . . . 14, 2101 BC489A . . . . . . . . . . . . . . . . . . . . . . 2101 BC489B . . . . . . . . . . . . . . . . . . . . . . 2101 BC490 . . . . . . . . . . . . . . . . . . 14, 2106 BC490A . . . . . . . . . . . . . . . . . . . . . . 2106
. . . . . . . . . . . . . . . . . . 13, 247 . . . . . . . . . . . . . . . . . . . . . . . 251 . . . . . . . . . . . . . . . . . . . . . . . 251 . . . . . . . . . . . . . . . . . . . . . . . 255 . . . . . . . . . . . . . . . . . . 15, 255 . . . . . . . . . . . . . . . . 118, 4110 . . . . . . . . . . . . . . . . . . . . . . . 118 . . . . . . . . . . . . . . . . 118, 4113 . . . . . . . . . . . . . . . . 118, 4113 . . . . . . . . . . . . . . . . 118, 4113 . . . . . . . . . . . . . . . . 118, 4116 . . . . . . . . . . . . . . . . . . . . . . . 118 . . . . . . . . . . . . . . . . 118, 4116 . . . . . . . . . . . . . . . . . . . . . . . 259 . . . . . . . . . . . . . . . . . . 15, 259 . . . . . . . . . . . . . . . . 119, 4123 . . . . . . . . . . . . . . . . . . . . . . . 119 . . . . . . . . . . . . . . . . 119, 4130 . . . . . . . . . . . . . . . . . . 14, 264 . . . . . . . . . . . . . . . . . . 14, 264
BC557C . . . . . . . . . . . . . . . . . 12, 2123 BC558B . . . . . . . . . . . . . . . . . 12, 2123 BC559B . . . . . . . . . . . . . . . . . 13, 2128 BC559C . . . . . . . . . . . . . . . . . 13, 2128 BC560C . . . . . . . . . . . . . . . . . 13, 2128 BC618 . . . . . . . . . . . . . . . . . . 14, 2131 BC635 . . . . . . . . . . . . . . . . . . . . . . . 2136 BC636 . . . . . . . . . . . . . . . . . . . . . . . 2139 BC637 . . . . . . . . . . . . . . . . . . . . . . . 2136 BC638 . . . . . . . . . . . . . . . . . . . . . . . 2139 BC639 . . . . . . . . . . . . . . . . . . 14, 2136 BC640 . . . . . . . . . . . . . . . . . . 14, 2139 BC80716LT1 . . . . . . . . . . 110, 2142 BC80725LT1 . . . . . . . . . . 110, 2142 BC80740LT1 . . . . . . . . . . 110, 2142 BC80825WT1 . . . . . . . . . . . . . . . . 111 BC80840WT1 . . . . . . . . . . . . . . . . 111 BC81716LT1 . . . . . . . . . . 110, 2144 BC81725LT1 . . . . . . . . . . 110, 2144 BC81740LT1 . . . . . . . . . . 110, 2144 BC81825WT1 . . . . . . . . . . . . . . . . 111 BC81840WT1 . . . . . . . . . . . . . . . . 111 BC818WT1 . . . . . . . . . . . . . . . . . . . . 111 BC846ALT1 . . . . . . . . . . . . 110, 2146 BC846AWT1 . . . . . . . . . . . . 111, 2150 BC846BLT1 . . . . . . . . . . . . 110, 2146 BC846BWT1 . . . . . . . . . . . 111, 2150 BC847ALT1 . . . . . . . . . . . . 110, 2146 BC847AWT1 . . . . . . . . . . . . 111, 2150 BC847BLT1 . . . . . . . . . . . . 110, 2146 BC847BWT1 . . . . . . . . . . . 111, 2150 BC847CLT1 . . . . . . . . . . . . 110, 2146 BC847CWT1 . . . . . . . . . . . 111, 2150 BC848ALT1 . . . . . . . . . . . . 110, 2146 BC848AWT1 . . . . . . . . . . . . 111, 2150 BC848BLT1 . . . . . . . . . . . . 110, 2146 BC848BWT1 . . . . . . . . . . . 111, 2150 BC848CLT1 . . . . . . . . . . . . 110, 2146 BC848CWT1 . . . . . . . . . . . 111, 2150 BC849BLT1 . . . . . . . . . . . . . . . . . . 2146
2N6515 . . . . . . . . . . . . . . . . . . . . . . . 269 2N6517 . . . . . . . . . . . . . . . . . . 15, 269 2N6519 . . . . . . . . . . . . . . . . . . 15, 269 2N6520 . . . . . . . . . . . . . . . . . . 15, 269 2N7000 . . . . . . . . . . . . . . . . . . 120, 43 2N7002LT1 . . . . . . . . . . 122, 137, 45 2N7008 . . . . . . . . . . . . . . . . . . . . . . . 120 2SA1774 . . . . . . . . . . . . . . . . 112, 275 2SC4617 . . . . . . . . . . . . . . . . 112, 277 BAL99LT1 . . . . . . . . . . . . . . . . 132, 59 BAS16LT1 . . . . . . . . . . . . . . . BAS16WT1 . . . . . . . . . . . . . . BAS21LT1 . . . . . . . . . . . . . . . BAS4004LT1 . . . . . . . . . . . BAS4006LT1 . . . . . . . . . . . BAS40LT1 . . . . . . . . . . . . . . . BAS7004LT1 . . . . . . . . . . . BAS70LT1 . . . . . . . . . . . . . . . BAS116LT1 . . . . . . . . . . . . . . BAT54ALT1 . . . . . . . . . . . . . . 132, 511 132, 513 132, 516 130, 519 130, 520 130, 518 130, 522 130, 521 133, 523 130, 525
Alphanumeric Index
Device Page Device Page Device Page
BC849CLT1 . . . . . . . . . . . . . . . . . . 2146 BC850BLT1 . . . . . . . . . . . . . . . . . . 2146 BC850CLT1 . . . . . . . . . . . . . . . . . . 2146 BC856ALT1 . . . . . . . . . . . . 110, 2154 BC856AWT1 . . . . . . . . . . . . 111, 2159 BC856BLT1 . . . . . . . . . . . . 110, 2154 BC856BWT1 . . . . . . . . . . . 111, 2159 BC857ALT1 . . . . . . . . . . . . 110, 2154 BC857AWT1 . . . . . . . . . . . . 111, 2159 BC857BLT1 . . . . . . . . . . . . 110, 2154 BC857BWT1 . . . . . . . . . . . BC858ALT1 . . . . . . . . . . . . BC858AWT1 . . . . . . . . . . . . BC858BLT1 . . . . . . . . . . . . BC858BWT1 . . . . . . . . . . . BC858CLT1 . . . . . . . . . . . . BC858CWT1 . . . . . . . . . . . BCP53T1 . . . . . . . . . . . . . . BCP56T1 . . . . . . . . . . . . . . BCP68T1 . . . . . . . . . . . . . . 111, 2159 110, 2154 111, 2159 110, 2154 111, 2159 110, 2154 111, 2159 116, 2164 116, 2166 117, 2169 BS107 . . . . . . . . . . . . . . . . . . . 120, 48 BS107A . . . . . . . . . . . . . . . . . . 120, 48 BS170 . . . . . . . . . . . . . . . . . . 120, 411 BSP16T1 . . . . . . . . . . . . . . . 117, 2264 BSP19AT1 . . . . . . . . . . . . . 117, 2266 BSP52T1 . . . . . . . . . . . . . . . 117, 2268 BSP62T1 . . . . . . . . . . . . . . . 117, 2270 BSS63LT1 . . . . . . . . . . . . . . 116, 2273 BSS64LT1 . . . . . . . . . . . . . . 116, 2275 BSS84LT1 . . . . . 122, 137, 32, 413 BSS123LT1 . . . . . . . . 122, 137, 416 BSS138LT1 . . . 122, 137, 35, 418 BSV52LT1 . . . . . . . . . . . . . . 114, 2277 DAN222 . . . . . . . . . . . . . . . . . 133, 560 DAP222 . . . . . . . . . . . . . . . . . 133, 562 DTA114YE . . . . . . . . . . . . . 113, 2279 DTA143EE . . . . . . . . . . . . . 113, 2281 DTC114TE . . . . . . . . . . . . . 113, 2282 DTC114YE . . . . . . . . . . . . . 113, 2283 J110 . . . . . . . . . . . . . . . . . . . . . . . . . . 119 J112 . . . . . . . . . . . . . . . . . . . 119, 4138 J202 . . . . . . . . . . . . . . . . . . . 118, 4141 J304 . . . . . . . . . . . . . . . . . . . . . . . . . 4144 J308 . . . . . . . . . . . . . . . . . . . 118, 4151 J309 . . . . . . . . . . . . . . . . . . . 118, 4151 J310 . . . . . . . . . . . . . . . . . . . 118, 4151 M1MA141KT1 . . . . . . . . . . . 132, 564 M1MA141WAT1 . . . . . . . . . . 133, 566 M1MA141WKT1 . . . . . . . . . 133, 568 M1MA142KT1 . . . . . . . . . . . 132, 564 M1MA142WAT1 . . . . . . . . . . 133, 566 M1MA142WKT1 . . . . . . . . . 133, 568 M1MA151AT1 . . . . . . . . . . . 132, 570 M1MA151KT1 . . . . . . . . . . . 132, 572 M1MA151WAT1 . . . . . . . . . . 133, 574 M1MA151WKT1 . . . . . . . . . 133, 576 M1MA152AT1 . . . . . . . . . . . . . . . . . 570 M1MA152KT1 . . . . . . . . . . . . . . . . . 572 M1MA152WAT1 . . . . . . . . . . . . . . . . 574 M1MA152WKT1 . . . . . . . . . . . . . . . 576 M1MA174T1 . . . . . . . . . . . . . . . . . . . 132 MBD54DWT1 . . . . . . . . . . . . . . . . . . 578 MBD101 . . . . . . . . . . . 129, 130, 580 MBD110DWT1 . . . . . . . . . . . 130, 582 MBD301 . . . . . . . . . . . 129, 130, 587 MBD330DWT1 . . . . . . . . . . . 130, 582 MBD701 . . . . . . . . . . . 129, 130, 589 MBD770DWT1 . . . . . . . . . . . 130, 582 MBF4416DW1T1 . . . . . . . . . . . . . . . 121 MBF5457DW1T1 . . . . . . . . . . . . . . . 121 MBT3904DW1T1 . . . . . . . . 111, 2286 MBT3904DW9T1 . . . . . . . . . . . . . . . 111 MBT3906DW1T1 . . . 111, 112, 2286 MBT3906DW9T1 . . . . . . . . . . . . . . . 111 MBT3946DW1T1 . . . . . . . . . . . . . . 2286 MBV109T1 . . . . . . . . . . . . . . 128, 591 MDC3105LT1 . . . . . . . . . . . 138, 2818 MDC5001T1 . . . . . . . . . . . . 138, 2823 MGSF1N02LT1 122, 137, 39, 422 MGSF1N03LT1 122, 137, 312, 425 MGSF1P02ELT1122, 137, 315, 428 MGSF1P02LT1 122, 137, 317, 430 MGSF3441VT1 . . . . . 137, 320, 433 MGSF3441XT1 . . . . . 137, 324, 437 MGSF3442VT1 . . . . . 137, 326, 439 MGSF3442XT1 . . . . . 137, 330, 443 MGSF3454VT1 . . . . . 137, 332, 445 MGSF3454XT1 . . . . . 137, 336, 449 MGSF3455VT1 . . . . . 137, 340, 453 MGSF3455XT1 . . . . . 137, 344, 457 MMAD130 . . . . . . . . . . . . . . . 135, 593 MMAD1103 . . . . . . . . . . . . . . 135, 593 MMAD1105 . . . . . . . . . . . . . . 135, 593 MMAD1106 . . . . . . . . . . . . . . . . . . . . 135 MMAD1107 . . . . . . . . . . . . . . 135, 593 MMAD1108 . . . . . . . . . . . . . . 135, 596 MMAD1109 . . . . . . . . . . . . . . 135, 593 MMBD101LT1 . . . . . . 129, 130, 580 MMBD301LT1 . . . . . . 129, 130, 587 MMBD330T1 . . . . . . . . . . . . . . . . . . 130 MMBD352LT1 . . . . . . 129, 130, 599 MMBD352WT1 . . . . . . . . . 130, 5101 MMBD353LT1 . . . . . . 129, 130, 599 MMBD354LT1 . . . . . . 129, 130, 599 MMBD355LT1 . . . . . . . . . . . . . . . . . 599 MMBD452LT1 . . . . . . . . . . . . . . . . 5103 MMBD701LT1 . . . . . . 129, 130, 589 MMBD717LT1 . . . . . . . . . . . . . . . . 5105 MMBD770T1 . . . . . . . . . . . . . . . . . . 130 MMBD914LT1 . . . . . . . . . . 132, 5107 MMBD1000LT1133, 137, 346, 5109 MMBD1005LT1 134, 137, 348, 5111 MMBD1010LT1134, 137, 350, 5113 MMBD2000T1 133, 137, 346, 5109 MMBD2005T1 134, 137, 348, 5111 MMBD2010T1 134, 137, 350, 5113 MMBD2835LT1 . . . . . . . . . 133, 5115 MMBD2836LT1 . . . . . . . . . 133, 5115 MMBD2837LT1 . . . . . . . . . 133, 5117 MMBD2838LT1 . . . . . . . . . 133, 5117 MMBD3000T1 133, 137, 346, 5109 MMBD3005T1 134, 137, 348, 5111 MMBD3010T1 134, 137, 350, 5113 MMBD6050LT1 . . . . . . . . . 132, 5119 MMBD6100LT1 . . . . . . . . . 133, 5121 MMBD7000LT1 . . . . . . . . . 133, 5123 MMBF170LT1 . . . . . . . . . . . . 122, 459 MMBF0201NLT1122, 137, 352, 461 MMBF0202PLT1122, 137, 356, 465 MMBF2201NT1 122, 137, 360, 469 MMBF2201PT1 . . . . . . . . . . . . . . . . 122 MMBF2202PT1 . . . . . 137, 363, 472 MMBF4391LT1 . . . . . . . . . . 122, 4156 MMBF4392LT1 . . . . . . . . . . 122, 4156 MMBF4393LT1 . . . . . . . . . . 122, 4156 MMBF4416LT1 . . . . . . . . . . 121, 4160 MMBF5457LT1 . . . . . . . . . . 121, 4167 MMBF5460LT1 . . . . . . . . . . 121, 4170 MMBF5484LT1 . . . . . . . . . . 121, 4173 MMBFJ175LT1 . . . . . . . . . . 122, 4180
BCP69T1 . . . . . . . . . . . . . . 117, 2172 BCW29LT1 . . . . . . . . . . . . . . . . . . . 2174 BCW30LT1 . . . . . . . . . . . . . . . . . . . 2174 BCW33LT1 . . . . . . . . . . . . . . . . . . . 2180 BCW60ALT1 . . . . . . . . . . . . . . . . . . 2186 BCW60BLT1 . . . . . . . . . . . . . . . . . . 2186 BCW60DLT1 . . . . . . . . . . . . . . . . . 2186 BCW61BLT1 . . . . . . . . . . . . . . . . . . 2192 BCW61CLT1 . . . . . . . . . . . . . . . . . 2192 BCW61DLT1 . . . . . . . . . . . . . . . . . 2192 BCW65ALT1 . . . . . . . . . . . . . . . . . . BCW68GLT1 . . . . . . . . . . . . . . . . . BCW69LT1 . . . . . . . . . . . . . . . . . . . BCW70LT1 . . . . . . . . . . . . . . . . . . . BCW72LT1 . . . . . . . . . . . . . . . . . . . BCX17LT1 . . . . . . . . . . . . . . . . . . . BCX18LT1 . . . . . . . . . . . . . . . . . . . BCX19LT1 . . . . . . . . . . . . . . . . . . . BCX20LT1 . . . . . . . . . . . . . . . . . . . BCX70GLT1 . . . . . . . . . . . . . . . . . . 2198 2200 2202 2202 2208 2214 2214 2214 2214 2216
BCX70JLT1 . . . . . . . . . . . . . . . . . . 2216 BCX70KLT1 . . . . . . . . . . . . . . . . . . 2216 BDB01C . . . . . . . . . . . . . . . . 13, 2222 BDB02C . . . . . . . . . . . . . . . . 13, 2225 BDC01D . . . . . . . . . . . . . . . . 13, 2228 BF199 . . . . . . . . . . . . . . . . . . 16, 2231 BF224 . . . . . . . . . . . . . . . . . . 16, 2235 BF240 . . . . . . . . . . . . . . . . . . . . . . . 2239 BF393 . . . . . . . . . . . . . . . . . . 15, 2242 BF420 . . . . . . . . . . . . . . . . . . 15, 2245 BF421 . . . . . . . . . . . . . . . . . . 15, 2248 BF422 . . . . . . . . . . . . . . . . . . 15, 2245 BF423 . . . . . . . . . . . . . . . . . . 15, 2248 BF493S . . . . . . . . . . . . . . . . . 15, 2251 BF720T1 . . . . . . . . . . . . . . . 117, 2254 BF721T1 . . . . . . . . . . . . . . . 117, 2256 BF844 . . . . . . . . . . . . . . . . . . 15, 2258 BF959 . . . . . . . . . . . . . . . . . . 16, 2262 BFR30LT1 . . . . . . . . . . . . . . . . . . . . 4134 BFR31LT1 . . . . . . . . . . . . . . . . . . . . 4134
Alphanumeric Index
Device Page Device Page Device Page
MMBFJ177LT1 . . . . . . . . . . 122, 4181 MMBFJ309LT1 . . . . . . . . . . 121, 4182 MMBFJ310LT1 . . . . . . . . . . 121, 4182 MMBFU310LT1 . . . . . . . . . 121, 4186 MMBT404ALT1 . . . . . . . . . 115, 2296 MMBT918LT1 . . . . . . . . . . . 114, 2298 MMBT1010LT1116, 136, 2300, 367 MMBT2222ALT1 . . . . . . . . 110, 2303 MMBT2222AWT1 . . . . . . . 111, 2301 MMBT2222LT1 . . . . . . . . . . . . . . . . 2303 MMBT2369ALT1 . . . . . . . . 114, 2308 MMBT2369LT1 . . . . . . . . . . 114, 2308 MMBT2484LT1 . . . . . . . . . . 115, 2313 MMBT2907ALT1 . . . . . . . . 110, 2319 MMBT2907AWT1 . . . . . . . 111, 2317 MMBT2907LT1 . . . . . . . . . . . . . . . . 2319 MMBT3640LT1 . . . . . . . . . . 114, 2323 MMBT3904LT1 . . . . . . . . . . 110, 2326 MMBT3904WT1 . . . . . . . . . 111, 2332 MMBT3906LT1 . . . . . . . . . . 110, 2341 MMBT3906WT1 . . . . . . . . . 111, 2332 MMBT4401LT1 . . . . . . . . . . 110, 2346 MMBT4403LT1 . . . . . . . . . . 110, 2351 MMBT5087LT1 . . . . . . . . . . 115, 2356 MMBT5088LT1 . . . . . . . . . . . . . . . . 2362 MMBT5089LT1 . . . . . . . . . . 115, 2362 MMBT5401LT1 . . . . . . . . . . 116, 2366 MMBT5550LT1 . . . . . . . . . . . . . . . . 2370 MMBT5551LT1 . . . . . . . . . . 116, 2370 MMBT6427LT1 . . . . . . . . . . . . . . . . 2374 MMBT6428LT1 . . . . . . . . . . 115, 2379 MMBT6429LT1 . . . . . . . . . . 115, 2379 MMBT6517LT1 . . . . . . . . . . 116, 2383 MMBT6520LT1 . . . . . . . . . . 116, 2388 MMBTA05LT1 . . . . . . . . . . . . . . . . . 2393 MMBTA06LT1 . . . . . . . . . . . 116, 2393 MMBTA13LT1 . . . . . . . . . . . 115, 2395 MMBTA14LT1 . . . . . . . . . . . 115, 2395 MMBTA20LT1 . . . . . . . . . . . . . . . . . 2400 MMBTA42LT1 . . . . . . . . . . . 116, 2406 MMBTA43LT1 . . . . . . . . . . . . . . . . . 2406 MMBTA55LT1 . . . . . . . . . . . . . . . . . 2409 MMBTA56LT1 . . . . . . . . . . . 116, 2409 MMBTA63LT1 . . . . . . . . . . . . . . . . . 2410 MMBTA64LT1 . . . . . . . . . . . 115, 2410 MMBTA70LT1 . . . . . . . . . . . . . . . . . 2412 MMBTA92LT1 . . . . . . . . . . . 116, 2417 MMBTA93LT1 . . . . . . . . . . . . . . . . . 2417 MMBTH10LT1 . . . . . . . . . . 114, 2420 MMBTH24LT1 . . . . . . . . . . 114, 2424 MMBTH69LT1 . . . . . . . . . . 114, 2426 MMBTH81LT1 . . . . . . . . . . 114, 2427 MMBV105GLT1 . . . . 126, 128, 5125 MMBV109LT1 . . . . . . 126, 128, 591 MMBV409LT1 . . . . . 127, 128, 5127 MMBV432LT1 . . . . . 123, 125, 5129 MMBV609LT1 . . . . . 127, 128, 5131 MMBV809LT1 . . . . . 127, 128, 5133 MMBV2101LT1 . . . . 123, 125, 5135 MMBV2103LT1 . . . . . . . . . 125, 5135 MMBV2105LT1 . . . . 123, 125, 5135 MMBV2107LT1 . . . . . . . . . 125, 5135 MMBV2108LT1 . . . . . . . . . 125, 5135 MMBV2109LT1 . . . . 123, 125, 5135 MMBV3102LT1 . . . . 127, 128, 5138 MMBV3401LT1 . . . . 131, 132, 5140 MMBV3700LT1 . . . . 131, 132, 5142 MMFT107T1 . . . . . . . . . . . . . 122, 476 MMFT960T1 . . . . . . . . . . . . . 122, 479 MMFT2406T1 . . . . . . . . . . . . 122, 482 MMFT6661T1 . . . . . . . . . . . . 122, 484 MMPQ2222 . . . . . . . . . . . . . . . . . . 2428 MMPQ2222A . . . . . . . . . . . . 19, 2428 MMPQ2369 . . . . . . . . . . . . . 19, 2430 MMPQ2907 . . . . . . . . . . . . . . . . . . 2432 MMPQ2907A . . . . . . . . . . . . 19, 2432 MMPQ3467 . . . . . . . . . . . . . 19, 2434 MMPQ3725 . . . . . . . . . . . . . 19, 2436 MMPQ3904 . . . . . . . . . . . . . 19, 2438 MMPQ3906 . . . . . . . . . . . . . 19, 2440 MMPQ6700 . . . . . . . . . . . . . 19, 2442 MMPQ6842 . . . . . . . . . . . . . . . . . . 2443 MMSD71RKT1 . . . . . . . . . . . . . . . . . 132 MMSD101T1 . . . . . . . . . . . . . . . . . . 130 MMSD301T1 . . . . . . . . . . . 130, 5144 MMSD701T1 . . . . . . . . . . . 130, 5144 MMSD914T1 . . . . . . . . . . . 132, 5147 MMSD1000T1 133, 137, 346, 5109 MMUN2111LT1 . . . . . . . . . 112, 2445 MMUN2112LT1 . . . . . . . . . 112, 2445 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... ......... 112, 2445 112, 2445 112, 2445 112, 2446 112, 2446 112, 2446 112, 2446 112, 2446 112, 2446 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 112, 2452 MPN3404 . . . . . . . . . 131, 132, 5149 MPN3700 . . . . . . . . . 131, 132, 5142 MPQ2222 . . . . . . . . . . . . . . . . . . . . 2460 MPQ2222A . . . . . . . . . . . . . . 19, 2460 MPQ2369 . . . . . . . . . . . . . . . 19, 2465 MPQ2483 . . . . . . . . . . . . . . . 19, 2469 MPQ2484 . . . . . . . . . . . . . . . 19, 2469 MPQ2906 . . . . . . . . . . . . . . . . . . . . 2471 MPQ2907 . . . . . . . . . . . . . . . . . . . . 2471 MPQ2907A . . . . . . . . . . . . . . 19, 2471 MPQ3467 . . . . . . . . . . . . . . . MPQ3725 . . . . . . . . . . . . . . . MPQ3762 . . . . . . . . . . . . . . . MPQ3798 . . . . . . . . . . . . . . . MPQ3799 . . . . . . . . . . . . . . . MPQ3904 . . . . . . . . . . . . . . . MPQ3906 . . . . . . . . . . . . . . . MPQ6001 . . . . . . . . . . . . . . . MPQ6002 . . . . . . . . . . . . . . . MPQ6100A . . . . . . . . . . . . . . 19, 2476 19, 2479 19, 2483 19, 2486 19, 2486 19, 2489 19, 2495 19, 2500 19, 2500 19, 2503
MPQ6426 . . . . . . . . . . . . . . . 19, 2506 MPQ6502 . . . . . . . . . . . . . . . 19, 2500 MPQ6600A1 . . . . . . . . . . . . . 19, 2503 MPQ6700 . . . . . . . . . . . . . . . 19, 2509 MPQ6842 . . . . . . . . . . . . . . . 19, 2514 MPQ7041 . . . . . . . . . . . . . . . . . . . . 2518 MPQ7042 . . . . . . . . . . . . . . . 19, 2518 MPQ7043 . . . . . . . . . . . . . . . 19, 2518 MPQ7051 . . . . . . . . . . . . . . . 19, 2520 MPQ7091 . . . . . . . . . . . . . . . . . . . . 2523 MPQ7093 . . . . . . . . . . . . . . . 19, 2523 MPS404A . . . . . . . . . . . . . . . 17, 2525 MPS650 . . . . . . . . . . . . . . . . 14, 2529 MPS651 . . . . . . . . . . . . . . . . 14, 2529 MPS750 . . . . . . . . . . . . . . . . 14, 2529 MPS751 . . . . . . . . . . . . . . . . 14, 2529 MPS918 . . . . . . . . . . . . . . . . 16, 2532 MPS2222 . . . . . . . . . . . . . . . . . . . . 2534 MPS2222A . . . . . . . . . . . . . . 12, 2534 MPS2369 . . . . . . . . . . . . . . . . . . . . 2539 MPS2369A . . . . . . . . . . . . . . 16, 2539 MPS2907 . . . . . . . . . . . . . . . . . . . . 2542 MPS2907A . . . . . . . . . . . . . . 12, 2542 MPS3563 . . . . . . . . . . . . . . . 16, 2532 MPS3638A . . . . . . . . . . . . . . . . . . . 2546 MPS3640 . . . . . . . . . . . . . . . . . . . . 2552 MPS3646 . . . . . . . . . . . . . . . 16, 2555 MPS3904 . . . . . . . . . . . . . . . 13, 2560 MPS3906 . . . . . . . . . . . . . . . 13, 2566 MPS4124 . . . . . . . . . . . . . . . . . . . . 2572 MPS4126 MPS4250 MPS5179 MPS6428 MPS6507 MPS6521 MPS6523 MPS6560 MPS6601 MPS6602 . . . . . . . . . . . . . . . . . . . . 2574 . . . . . . . . . . . . . . . 13, 2576 . . . . . . . . . . . . . . . 16, 2578 . . . . . . . . . . . . . . . 13, 2580 . . . . . . . . . . . . . . . . . . . . 2582 . . . . . . . . . . . . . . . 13, 2583 . . . . . . . . . . . . . . . 13, 2583 . . . . . . . . . . . . . . . . . . . . 2594 . . . . . . . . . . . . . . . . . . . . 2596 . . . . . . . . . . . . . . . 12, 2596
MPF102 . . . . . . . . . . . . . . . . 118, 4190 MPF910 . . . . . . . . . . . . . . . . . 120, 487 MPF930 . . . . . . . . . . . . . . . . . 120, 490 MPF960 . . . . . . . . . . . . . . . . . 120, 490 MPF990 . . . . . . . . . . . . . . . . . 120, 490 MPF4392 . . . . . . . . . . . . . . 119, 4197 MPF4393 . . . . . . . . . . . . . . 119, 4197 MPF6659 . . . . . . . . . . . . . . . 120, 493 MPF6660 . . . . . . . . . . . . . . . 120, 493 MPF6661 . . . . . . . . . . . . . . . 120, 493
Alphanumeric Index
Device
MPS6651 MPS6652 MPS6714 MPS6715 MPS6717 MPS6724 MPS6725 MPS6726 MPS6727 MPS8098
Page
Device
Page
Device
MUN5211DW1T1 . . . . . . . . MUN5211T1 . . . . . . . . . . . . MUN5212DW1T1 . . . . . . . MUN5212T1 . . . . . . . . . . . . MUN5213DW1T1 . . . . . . . MUN5213T1 . . . . . . . . . . . . MUN5214DW1T1 . . . . . . . MUN5214T1 . . . . . . . . . . . . MUN5215DW1T1 . . . . . . . MUN5215T1 . . . . . . . . . . . . MUN5216DW1T1 . . . . . . . MUN5216T1 . . . . . . . . . . . . MUN5230DW1T1 . . . . . . . MUN5230T1 . . . . . . . . . . . . MUN5231DW1T1 . . . . . . . MUN5231T1 . . . . . . . . . . . . MUN5232DW1T1 . . . . . . . MUN5232T1 . . . . . . . . . . . . MUN5233DW1T1 . . . . . . . MUN5233T1 . . . . . . . . . . . . MUN5234DW1T1 . . . . . . . MUN5234T1 . . . . . . . . . . . . MUN5235DW1T1 . . . . . . . MUN5311DW1T1 . . . . . . . . MUN5312DW1T1 . . . . . . . MUN5313DW1T1 . . . . . . . MUN5314DW1T1 . . . . . . . MUN5315DW1T1 . . . . . . . MUN5316DW1T1 . . . . . . . MUN5330DW1T1 . . . . . . .
Page
113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2769 113, 2761 113, 2777 113, 2777 113, 2777 113, 2777 113, 2777 113, 2777 113, 2777
. . . . . . . . . . . . . . . . . . . . 2596 . . . . . . . . . . . . . . . 12, 2596 . . . . . . . . . . . . . . . . . . . . 2602 . . . . . . . . . . . . . . . 14, 2602 . . . . . . . . . . . . . . . 13, 2605 . . . . . . . . . . . . . . . . . . . . 2608 . . . . . . . . . . . . . . . . . . . . 2608 . . . . . . . . . . . . . . . . . . . . 2611 . . . . . . . . . . . . . . . 14, 2611 . . . . . . . . . . . . . . . . . . . . 2614
MSB709RT1 . . . . . . . . . . . 111, 2717 MSB710RT1 . . . . . . . . . . . 111, 2718 MSB1218ART1 . . . . . . . . 111, 2720 MSC2295BT1 . . . . . . . . . 114, 2723 MSC2295CT1 . . . . . . . . . 114, 2723 MSC3130T1 . . . . . . . . . . . . 114, 2724 MSC3930BT1 . . . . . . . . . . . . . . . . 111 MSD601RT1 . . . . . . . . . . 111, 2725 MSD601ST1 . . . . . . . . . . . 111, 2725 MSD602RT1 . . . . . . . . . . 111, 2726 MSD1010T1 . 116, 136, 2300, 367 MSD1328RT1 . . . . . . . . . 111, 2727 MSD1819ART1 . . . . . . . . 111, 2728 MSD6100 . . . . . . . . . . . . . . . . . . . . 5151 MSD6150 . . . . . . . . . . . . . . . . . . . . 5153 MUN2111T1 . . . . . . . . . . . . 112, 2731 MUN2112T1 . . . . . . . . . . . . 112, 2731 MUN2113T1 . . . . . . . . . . . . 112, 2731 MUN2114T1 . . . . . . . . . . . . 112, 2731 MUN2115T1 . . . . . . . . . . . . 112, 2731 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 ............ ............ ............ ............ ............ ............ ............ ............ ............ ............ 112, 2731 112, 2731 112, 2731 112, 2731 112, 2731 112, 2731 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 112, 2738 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746 113, 2754 113, 2746
MPS8099 . . . . . . . . . . . . . . . 12, 2614 MPS8598 . . . . . . . . . . . . . . . . . . . . 2614 MPS8599 . . . . . . . . . . . . . . . 12, 2614 MPSA05 . . . . . . . . . . . . . . . . 12, 2619 MPSA06 . . . . . . . . . . . . . . . . 12, 2619 MPSA13 . . . . . . . . . . . . . . . . 14, 2624 MPSA14 . . . . . . . . . . . . . . . . 14, 2624 MPSA17 . . . . . . . . . . . . . . . . 17, 2629 MPSA18 . . . . . . . . . . . . . . . . 13, 2632 MPSA20 . . . . . . . . . . . . . . . . 12, 2636 MPSA27 MPSA28 MPSA29 MPSA42 MPSA43 MPSA44 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64 MPSA70 MPSA75 MPSA77 MPSA92 MPSA93 MPSH10 MPSH11 MPSH17 MPSH81 . . . . . . . . . . . . . . . . 14, 2642 . . . . . . . . . . . . . . . . . . . . . 2645 . . . . . . . . . . . . . . . . 14, 2645 . . . . . . . . . . . . . . . . 15, 2648 . . . . . . . . . . . . . . . . . . . . . 2648 . . . . . . . . . . . . . . . . 15, 2651 . . . . . . . . . . . . . . . . 12, 2619 . . . . . . . . . . . . . . . . 12, 2619 . . . . . . . . . . . . . . . . . . . . . 2655 . . . . . . . . . . . . . . . . 14, 2655 . . . . . . . . . . . . . . . . 14, 2655 . . . . . . . . . . . . . . . . 12, 2658 . . . . . . . . . . . . . . . . 14, 2664 . . . . . . . . . . . . . . . . 14, 2664 . . . . . . . . . . . . . . . . 15, 2666 . . . . . . . . . . . . . . . . . . . . . 2666 . . . . . . . . . . . . . . . . 16, 2669 . . . . . . . . . . . . . . . . 16, 2669 . . . . . . . . . . . . . . . . 16, 2671 . . . . . . . . . . . . . . . . 16, 2673
MUN2215T1 . . . . . . . . . . . . MUN2216T1 . . . . . . . . . . . . MUN2230T1 . . . . . . . . . . . . MUN2231T1 . . . . . . . . . . . . MUN2232T1 . . . . . . . . . . . . MUN2233T1 . . . . . . . . . . . . MUN2234T1 . . . . . . . . . . . . MUN5111DW1T1 . . . . . . . . MUN5111T1 . . . . . . . . . . . . MUN5112DW1T1 . . . . . . . . MUN5112T1 . . . . . . . . . . . . MUN5113DW1T1 . . . . . . . . MUN5113T1 . . . . . . . . . . . . MUN5114DW1T1 . . . . . . . . MUN5114T1 . . . . . . . . . . . . MUN5115DW1T1 . . . . . . . . MUN5115T1 . . . . . . . . . . . . MUN5116DW1T1 . . . . . . . . MUN5116T1 . . . . . . . . . . . . MUN5130DW1T1 . . . . . . . MUN5130T1 . . . . . . . . . . . . MUN5131DW1T1 . . . . . . . MUN5131T1 . . . . . . . . . . . . MUN5132DW1T1 . . . . . . . MUN5132T1 . . . . . . . . . . . . MUN5133DW1T1 . . . . . . . MUN5133T1 . . . . . . . . . . . . MUN5134DW1T1 . . . . . . . MUN5134T1 . . . . . . . . . . . . MUN5135DW1T1 . . . . . . .
MUN5331DW1T1 . . . . . . . 113, 2777 MUN5332DW1T1 . . . . . . . 113, 2777 MUN5333DW1T1 . . . . . . . 113, 2777 MUN5334DW1T1 . . . . . . . 113, 2777 MUN5335DW1T1 . . . . . . . . . . . . . 2777 MV104 . . . . . . . . . . . . 123, 125, 5155 MV209 . . . . . . . . . . . . . 126, 128, 591 MV409 . . . . . . . . . . . . 127, 128, 5127 MV1403 . . . . . . . . . . . 127, 128, 5157 MV1404 . . . . . . . . . . . 127, 128, 5157 MV1405 MV1626 MV1628 MV1630 MV1634 MV1638 MV1648 MV1650 MV2101 MV2104 . . . . . . . . . . . 127, 128, 5157 . . . . . . . . . . . . . . . . 124, 5159 . . . . . . . . . . . 123, 124, 5159 . . . . . . . . . . . . . . . . 124, 5159 . . . . . . . . . . . . . . . . 124, 5159 . . . . . . . . . . . 123, 124, 5159 . . . . . . . . . . . . . . . . 124, 5159 . . . . . . . . . . . 123, 124, 5159 . . . . . . . . . . . 123, 124, 5135 . . . . . . . . . . . . . . . . 124, 5135
MPSL01 . . . . . . . . . . . . . . . . . . . . . 2676 MPSL51 . . . . . . . . . . . . . . . . . . . . . 2680 MPSW01 . . . . . . . . . . . . . . . . . . . . . 2684 MPSW01A . . . . . . . . . . . . . . 14, 2684 MPSW05 . . . . . . . . . . . . . . . . . . . . . 2687 MPSW06 . . . . . . . . . . . . . . . . 13, 2687 MPSW10 . . . . . . . . . . . . . . . . . . . . . 2690 MPSW13 . . . . . . . . . . . . . . . . . . . . . 2693 MPSW14 . . . . . . . . . . . . . . . . . . . . . 2693 MPSW42 . . . . . . . . . . . . . . . . 15, 2696 MPSW45 . . . . . . . . . . . . . . . . . . . . . 2699 MPSW45A . . . . . . . . . . . . . . 14, 2699 MPSW51 . . . . . . . . . . . . . . . . . . . . . 2704 MPSW51A . . . . . . . . . . . . . . 14, 2704 MPSW55 . . . . . . . . . . . . . . . . . . . . . 2707 MPSW56 . . . . . . . . . . . . . . . . 13, 2707 MPSW63 . . . . . . . . . . . . . . . . . . . . . 2710 MPSW64 . . . . . . . . . . . . . . . . 14, 2710 MPSW92 . . . . . . . . . . . . . . . . 15, 2713 MSA1022CT1 . . . . . . . . . 114, 2716
MV2105 . . . . . . . . . . . 123, 124, 5135 MV2108 . . . . . . . . . . . . . . . . 124, 5135 MV2109 . . . . . . . . . . . 123, 124, 5135 MV2111 . . . . . . . . . . . . . . . . 124, 5135 MV2115 . . . . . . . . . . . 123, 124, 5135 MV7005T1 . . . . . . . . 127, 128, 5160 MV7404T1 . . . . . . . . 127, 128, 5162 P2N2222A . . . . . . . . . . . . . . 17, 2789 P2N2907A . . . . . . . . . . . . . . 17, 2794 PZT651T1 . . . . . . . . . . . . . . 117, 2798
Alphanumeric Index
Device
PZT751T1 . . . . . . . . . . . . . . PZT2222AT1 . . . . . . . . . . . PZT2907AT1 . . . . . . . . . . . PZTA14T1 . . . . . . . . . . . . . . PZTA42T1 . . . . . . . . . . . . . . PZTA64T1 . . . . . . . . . . . . . . PZTA92T1 . . . . . . . . . . . . . .
Page
117, 2800 117, 2802 117, 2805 117, 2808 117, 2811 117, 2813 117, 2816
Device
Page
Device
Page
PZTA96T1 . . . . . . . . . . . . . . 117, 2817 VN10LM . . . . . . . . . . . . . . . 120, 4101 VN0300L . . . . . . . . . . . . . . . . 120, 496 VN0610LL . . . . . . . . . . . . . . . 120, 498 VN2222LL . . . . . . . . . . . . . . 120, 4103 VN2406L . . . . . . . . . . . . . . . 120, 4106 VN2410L . . . . . . . . . . . . . . . 120, 4108
1 2 3 4 5 6 7 8 9 10 11
Selector Guide Plastic-Encapsulated Transistors GreenLine Portfolio Devices Small-Signal Field-Effect Transistors and MOSFETs Small-Signal Tuning and Switching Diodes Tape and Reel Specifications and Packaging Specifications Surface Mount Information Package Outline Dimensions Reliability and Quality Assurance Replacement Devices Alphanumeric Index