KM416S4030C is 67,108,864 bits synchronous high data CMOS rate Dynamic RAM organized synchronous as 4 x 1,048,576 words by 16 s high performance with SAMSUNG MRS cycle with address key programs design allows precise cycle control are possible on with the use of system clock I / O transactions ble burst length and programmable mance memory system applications.
KM416S4030C is 67,108,864 bits synchronous high data CMOS rate Dynamic RAM organized synchronous as 4 x 1,048,576 words by 16 s high performance with SAMSUNG MRS cycle with address key programs design allows precise cycle control are possible on with the use of system clock I / O transactions ble burst length and programmable mance memory system applications.
KM416S4030C is 67,108,864 bits synchronous high data CMOS rate Dynamic RAM organized synchronous as 4 x 1,048,576 words by 16 s high performance with SAMSUNG MRS cycle with address key programs design allows precise cycle control are possible on with the use of system clock I / O transactions ble burst length and programmable mance memory system applications.