MDV1525 – Single N-Channel Trench MOSFET 30V

MDV1525
Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ

General Description Features

The MDV1525 uses advanced MagnaChip’s MOSFET
VDS = 30V
Technology, which provides high performance in on-state
ID = 24A @VGS = 10V
resistance, fast switching performance and excellent
RDS(ON)
quality. MDV1525 is suitable for DC/DC converter and < 10.1mΩ @VGS = 10V
general purpose applications. < 14.0mΩ @VGS = 4.5V

100% UIL Tested

100% Rg Tested

D
D D D D D D D D

G
S S S G G S S S

PDFN33 S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
o
TC=25 C (Silicon limited) 37.2
TC=25oC (Package limited) 24
(1) o
A
Continuous Drain Current TC=70 C ID 24
TA=25oC 13.8(3)
o
TA=70 C 11.1(3)
Pulsed Drain Current IDM 60 A
o
TC=25 C 24.5
o
TC=70 C 15.6
Power Dissipation PD W
TA=25oC 3.4(3)
TA=70oC 2.2(3)
Single Pulse Avalanche Energy (2) EAS 48 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

(1)
Thermal Resistance, Junction-to-Ambient RθJA 36 o
C/W
Thermal Resistance, Junction-to-Case RθJC 5.1

May. 2011. Version1.2 1 MagnaChip Semiconductor Ltd.

 MDV1525 – Single N-Channel Trench MOSFET 30V
Ordering Information

Part Number Temp. Range Package Packing Quantity Rohs Status

o
MDV1525URH -55~150 C PowerDFN33 Tape & Reel 5000 units Halogen Free

Electrical Characteristics (TJ = 25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.3 1.9 2.7
VDS = 30V, VGS = 0V - - 1
Drain Cut-Off Current IDSS
TJ=55oC - - 5 µA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = 10V, ID = 11A - 8.2 10.1
Drain-Source ON Resistance RDS(ON) TJ=125oC - 11.9 14.6 mΩ
VGS = 4.5V, ID = 9A - 11.5 14.0
Forward Transconductance gfs VDS = 5V, ID = 11A - 27.3 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) 8.8 12.6 16.4
Total Gate Charge Qg(4.5V) VDS = 15.0V, ID = 11A, 4.2 6.0 7.8
nC
Gate-Source Charge Qgs VGS = 10V - 2.5 -
Gate-Drain Charge Qgd - 1.8 -
Input Capacitance Ciss 568 811 1054
VDS = 15.0V, VGS = 0V,
Reverse Transfer Capacitance Crss 54 77 100 pF
f = 1.0MHz
Output Capacitance Coss 108 154 200
Turn-On Delay Time td(on) - 6.8 -
Rise Time tr VGS = 10V, VDS = 15.0V, - 11.8 -
ns
Turn-Off Delay Time td(off) ID = 11A, RG = 3.0Ω - 20.0 -
Fall Time tf - 7.1 -
Gate Resistance Rg f=1 MHz 1.0 1.6 3.0 Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 11A, VGS = 0V - 0.83 1.1 V
Body Diode Reverse Recovery Time trr - 22.2 33.3 ns
IF = 11A, dl/dt = 100A/µs
Body Diode Reverse Recovery Charge Qrr - 13.8 20.7 nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 16.8A, VDD = 27V, VGS = 10V
3. T < 10sec.

May. 2011. Version1.2 2 MagnaChip Semiconductor Ltd.

 MDV1525 – Single N-Channel Trench MOSFET 30V

May. 2011. Version1.2 3 MagnaChip Semiconductor Ltd.

 MDV1525 – Single N-Channel Trench MOSFET 30V
20 15
4.5V
3.5V

Drain-Source On-Resistance [mΩ]

15 8.0V 12
ID, Drain Current [A]

VGS = 10V VGS = 4.5V

10 9

VGS = 10V

3.0V
5 6

0 3
0.0 0.5 1.0 1.5 2.0 5 10 15 20

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

24
1.8
VGS=10V ※ Notes :
ID=11.0A ID = 11.0A
20
1.6
Drain-Source On-Resistance
Drain-Source On-Resistance
RDS(ON), (Normalized)

16
RDS(ON) [mΩ ],

1.4

1.2 12

1.0 8 TA = 25℃

0.8 4

0.6 0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10

TJ, Junction Temperature [ C]

o VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

16
※ Notes : ※ Notes :
VGS = 0V
VDS = 5V
1
10
IDR, Reverse Drain Current [A]

12
ID, Drain Current [A]

TA=25℃
8 10
0

TA=25℃

4
-1
10

0
0 1 2 3 4 5 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

VGS, Gate-Source Voltage [V] VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

May. 2011. Version1.2 4 MagnaChip Semiconductor Ltd.

 MDV1525 – Single N-Channel Trench MOSFET 30V
10
1200
Ciss = Cgs + Cgd (Cds = shorted)
※ Note : ID = 11A Coss = Cds + Cgd
Crss = Cgd
Ciss
8
900
VGS, Gate-Source Voltage [V]

Capacitance [pF]
6
600

4
※ Notes ;
300 1. VGS = 0 V
Coss
2. f = 1 MHz
2
Crss

0
0 0 5 10 15 20 25 30
0 3 6 9 12 15
VDS, Drain-Source Voltage [V]
Q G, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

50

Operation in This Area

is Limited by R DS(on)
2
10 40

10 ms
ID, Drain Current [A]
ID, Drain Current [A]

100 ms 30
1
10 1s
10s
DC
20
0
10

10

Single Pulse
-1 TJ=Max rated
10
TC=25℃
0
25 50 75 100 125 150
-1 0 1 2
10 10 10 10
T C, Case Temperature [℃]
VDS, Drain-Source Voltage [V]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature

1
10

D=0.5

0.2
Zθ JC, Thermal Response

0
10
0.1
0.05
0.02
-1
10 0.01

single pulse
-2
10 ※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC

-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response

Curve

May. 2011. Version1.2 5 MagnaChip Semiconductor Ltd.

 MDV1525 – Single N-Channel Trench MOSFET 30V
Package Dimension

PowerDFN33 (3.3x3.3mm)
Dimensions are in millimeters, unless otherwise specified

May. 2011. Version1.2 6 MagnaChip Semiconductor Ltd.

 MDV1525 – Single N-Channel Trench MOSFET 30V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

May. 2011. Version1.2 7 MagnaChip Semiconductor Ltd.