Notes - Solid State
Notes - Solid State
Solid State
Solid
No particular pattern is
Particle follow a definite
followed, and particles are
regular arrangement.
randomly arranged.
Difference between Crystalline and
Amorphous Solids
No particular pattern is
Particle follow a definite followed, and particles are
regular arrangement. randomly arranged.
Difference between Crystalline and
Amorphous Solids
Have a range of
Have a fixed or sharp temperature in which they
melting point and enthalpy melts as M.P. and the
of fusion. enthalpy of fusion is not
fixed.
Difference between Crystalline and
Amorphous Solids
Pseudo solids or
True solids. supercooled liquids.
Difference between Crystalline and
Amorphous Solids
B C
AB: Same arrangement B C Different arrangement
DC: Different arrangement along AB and CD
Difference between Crystalline and
Amorphous Solids
Example: Example:
Ag, Fe, Cu, NaCl, H2O(s), Glass, plastic, amorphous
diamond, quartz, sucrose silica, rubber, starch
(sugar)
Different crystalline
structure of the same Diamond
substance are called
its polymorphic forms.
Ionic solids
Covalent solids
Solids
Metallic solids
Molecular solids
Ionic Solids
Constituent particles
Atoms Electrical
(Nonmetals) conductivity
Very hard
Physical state
(Graphite → soft) Examples
Diamond, SiC,
SiO2, graphite
Melting point Very high
Covalent Solids
Examples
Diamond, SiC,
SiO2, graphite
Covalent Solids
Graphite
Graphite belongs
to covalent solids,
but it is soft and a good
conductor of electricity.
Good conductor in
Force of Electrical
Metallic bond solid and molten
interaction conductivity state
Type of Force of
molecules interaction
Dispersion force
Non-polar
or london forces
Dipole-dipole
Polar
H-bonding
I2 (s), CCl4, Xe
Non-
polar
Molecular
solids Polar SO2, SF4
H-bonded
H2O, H3BO3
Molecular Solids
Examples
Polar Soft Low
Lattice Point
Each constituent
particle (molecule,
atom, and ions) will be
represented by a dot (.)
Space
In 2-D lattice
Lattice
points
3-D Lattice
In 3-D Space
lattice
Lattice
points
Points to Remember!!
Lattice
Crystal structure
Unit Cell
Each such
parallelepiped
is called a unit cell.
Unit Cell
In 2-D Space
lattice
Unit cell
3-D Unit Cell
In 3-D Space
lattice
Lattice
points
Unit cell
Characteristics of Unit Cell
Unit Cell a, b 𝜸
𝛾 ≠ 90o,
Rhombic a=b 𝛾 ≠ 60o &
𝛾 ≠ 120o
Unit Cell
Non-primitive or centred
Primitive unit cell unit cell
Primitive Unit Cell
Primitive/Simple
unit cell
Non-Primitive or Centred Unit Cell
Non-primitive or
Centred Unit Cell
End-centred (E.C.)
Non-Primitive or Centred Unit Cell
It contains one constituent particle (atom, molecule, or ion) at its body centre
besides the particles at its corners. In body centred unit cell, the constituent
particles are present at the eight corners of the unit cell and also at the
centre of the unit cell as shown below.
Body-centred
unit cell
Non-Primitive or Centred Unit Cell
Such a unit cell contains one constituent particle present at the centre of
each face, besides the ones that at its corners. In face centred unit cell,
constituent particles are present at the eight corners of the unit cell and also
at the centre of six faces of the unit cell as shown below.
Face-centred
unit cell
Non-Primitive or Centred Unit Cell
In such a unit cell, one constituent particle is present at the centre of any two
opposite faces besides the ones present at its corners. In end centred unit cell,
constituent particles are present at the eight corners of the unit cell and also at
the centre of any two opposite faces of the unit cell as shown below.
End-centred
unit cell
Crystal systems
Cubic
Triclinic Tetragonal
Crystal
system
Monoclinic Orthorhombic
Rhombohedral
Hexagonal or trigonal
Crystal systems
𝜸 = 90°
Cubic
Face-centred Body-centred
Simple cubic
cubic cubic
Crystal systems
𝜸 = 90°
a=b≠c 𝛼 = β = 𝛾 = 90o c
𝞪 = 90°
Unit cell found Examples b
a 𝛃 = 90°
White tin,
Primitive, BC
SnO2, TiO2
Crystal systems
Tetragonal
Primitive Body-centred
Crystal systems
𝜸 = 90°
Edge length Angle
c
a≠b≠c 𝛼 = β = 𝛾 = 90o
𝞪 = 90°
Orthorhombic
system
Simple (primitive), end-centred, body-centred, and face-centred unit cells
are possible in an orthorhombic crystal system.
𝜸 = 90°
Edge length Angle
c
a≠b≠c 𝛼 = β = 𝛾 = 90o
𝞪 = 90°
Rhombohedral or Trigonal
crystal system
𝜸 ≠ 90°
Edge length Angle
a=b=c 𝛼 = β = 𝛾 ≠ 90o c
𝞪 ≠ 90°
b
Unit cell found Examples a 𝛃 ≠ 90°
Calcite (CaCO3),
Primitive
cinnabar (HgS)
Hexagonal
a=b≠c
Edge length Angle 𝜸 = 120°
𝛼 = β = 90o
a=b≠c
𝛾 = 120o c
Graphite, b
Primitive a
ZnO, CdS
Hexagonal Rhombohedral
or trigonal
Primitive Primitive
Crystal systems
𝛃 ≠ 120°, 90°,
60°
Edge length Angle
𝛼 = 𝛾 = 90o b
a≠b≠c
β ≠ 120o, 90o, 60o
𝞪 = 90°
𝜸 ≠ 90°
Edge length Angle
c
a≠b≠c 𝛼 ≠ β ≠ 𝛾 ≠ 90o
𝞪 ≠ 90°
Unit cell found Examples
b
K2Cr2O7, CuSO4.5H2O, a 𝛃 ≠ 90°
Primitive
H3BO3
Monoclinic Triclinic
Primitive,
Cubic a=b=c 𝛼 = β = 𝛾 = 90o
BCC, FCC
Primitive,
Tetragonal a=b≠c 𝛼 = β = 𝛾 = 90o
BC
Primitive,
Orthorhombic a≠b≠c 𝛼 = β = 𝛾 = 90o
BC, FC, EC
Crystal systems
Rhombohedral
a=b=c 𝛼 = β = 𝛾 ≠ 90o Primitive
or Trigonal
𝛼 = 𝛾 = 90o, Primitive,
Monoclinic a≠b≠c
β ≠ 90o EC
𝛼 = β = 90o,
Hexagonal a=b≠c Primitive
𝛾 = 120o
Contribution of Corner Particles
Contributes ⅛ part
to the unit cell.
Contribution of Face-Centred Particles
Contributes ½ part
to the unit cell.
Contribution of Edge-Centred Particles
Contributes ¼ part
to the unit cell.
Contribution of Body-Centred Particles
Contributes 1 part
(fully) to the unit cell.
Effective number of particles
Effective number of 1
= 8× = 1
particles in a unit cell 8
Simple Cubic Unit Cell
r
Relation between a & r
a = 2r
Volume of 𝝅 × 100
the unit cell = 3
a = (2r)3
= 6
≈ 52.33%
Body-Centred Cubic Unit Cell
Effective number of 1
particles in a unit = 8×
8
+ (1 × 1) = 2
cell
Body-Centred Cubic Unit Cell
Body-Centred Cubic Unit Cell
r a
2r a
r
Body-Centred Cubic Unit Cell
√3a = 4r
4r
a = √3
Packing efficiency (P.E)
√3 π × 100
Volume of
the unit cell = a3 = (4r/√3)
3
= 8
≈ 68%
Face-Centred Cubic Unit Cell
Effective number of 1 1
particles in a unit cell = 8×
8
+ 6×
2 = 4
Face-Centred Cubic Unit Cell
a > 2r
Spheres are touching
along the face diagonal
√2a = 4r
Packing Efficiency in FCC
4 × (4/3) πr3
× 100
P.E. = 4r 3
√2
π × 100
= 3√2
≈ 74%
Density of a unit cell
It is the ratio of
mass of the spheres
present in unit cell and
total volume
of unit cell.
Density of a unit cell
Z×M
Density of Density of
unit cell = crystal
Density (𝜌) = NA × a3
Coordination Number (C.N.)
Simple cubic
Number of nearest
neighbour particles
Coordination Body-centred
in a packing is
number cubic
called coordination
number.
Face-centred cubic
Coordination Number (C.N.)
Reference particle
Nearest particle
Next nearest particle
C.N. = 6
Nearest Neighbour
Distance of the
nearest particle = a = 2r
Number of
nearest particles = 6
Nearest Neighbour in BCC
Reference particle
Nearest particle
Number of nearest
particles = 8 C.N.
Nearest Neighbour in BCC
Reference particle
Nearest particle
Reference particle
Nearest particle
Distance of nearest a
particle in FCC = √2 = 2r
Number of
nearest particles = 12
Structure in Solids
Structure of Solids
Lattice
1D 2D 3D
Structure in Solids
C.N. = 2
Structure in Solids
Square Hexagonal
arrangement arrangement
Structure in Solids
Square arrangement in
2-D lattice
Square arrangement in
2-D lattice
A
A
Structure in Solids
Square arrangement in
2-D lattice
Primitive unit cell Non-primitive unit cell
Square arrangement in
2-D lattice
Square packing in 2-D
Unit cell
Primitive Non-primitive
Effective
number of 1 2
particles (Z)
C.N. 4 4
Structure in Solids
Hexagonal arrangement in
2-D lattice
A
A
Structure in Solids
Hexagonal arrangement in
2-D lattice
Hexagonal arrangement in
2-D lattice
Hexagonal packing in 2-D
Unit cell
Primitive Non-primitive
Effective
number of 1 3
particles (Z)
C.N. 6 6
Packing in 1D, 2D and 3D
1-D
Square Hexagonal
arrangement 2-D arrangement
3-D 3-D
Tetrahedral Octahedral
voids voids
Octahedral void
Tetrahedral void
Tetrahedral Void
Tetrahedral
void
Octahedral Void
Octahedral
void
Two Methods to place 3rd layer
on the 2nd layer
ABAB pattern
Unit Cell
A
Effective Number of Particles in
Hexagonal Unit Cell
Effective number 1 1
of particles (Z) = 12 ×
6 + 2×
2 + 3×1
For the
Corner particles For the centre particles of
of two hexagonal particles of two middle layer
layers hexagonal layers
Effective number 1 1
of particles (Z) = 12 ×
6
+2×
2
+3×1 = 6
Coordination Number (C.N.)
C.N. = 12
3 spheres
above the layer
+
Each sphere 6 spheres in
touches its layer
+
3 spheres
below the layer
Cubic Close Packing (CCP)
ABCABC pattern A
C.N. = 12
3 spheres
above the layer
HCP and CCP are the
+ only closely packed
lattices (because of
Each sphere 6 spheres in
their efficiency, 74%).
touches its layer
+
3 spheres
below the layer
Tetrahedral Voids in FCC Unit Cell
- Tetrahedral void
Tetrahedral Voids in FCC Unit Cell
Body
Each tetrahedral void is present
diagonal
on the body diagonal of the
FCC unit cell.
T.V. = 8
O.V. at body
O.V. at edge
centre
centre
Number of Octahedral Voids in FCC or CCP
Number of octahedral 1
voids per unit cell = 1 + 12 ×
4
Void at body
centre Void at edge
centre
= 4
Note
In general, in close-packed
structures (HCP and FCC)
Number of O.V. = Z
Number of T.V. = 2Z
Effective number of
Z particles in one unit cell
Number of Voids in HCP
Tetrahedral Voids Octahedral Voids
Number of
tetrahedral voids = 2Z Number of
octahedral voids = Z
Number of 2×6
tetrahedral voids = = 12
Number of
octahedral voids = 6
Remember
Tetrahedral Octahedral
Unit cell Z
void (2Z) void (Z)
FCC 4 8 4
HCP 6 12 6
Ionic Compounds
Na+
Cl‒
Rock Salt (NaCl)
Effective number of
Cl– ions per unit cell = 4
Formula of ionic
compound = NaCl
Effective number of
Na+ ions per unit cell = 4
Effective number
of formula units (Z) = 4
Rock Salt (NaCl)
Coordination number
of cations = 6
Experimental
ratio,
rZn2+
rS 2–
= 0.3
rZn2+
0.225 ≤ rS 2–
< 0.414
Zinc Blende (ZnS)
Number of nearest
cations
= 4
Distance of nearest a
(ii)
anion =
√2
Number of nearest
anions
= 12
Zinc Blende (ZnS)
S2-
Zn2+ ions occupy
alternate
Number of S2– ions = 6
(non-adjacent)
tetrahedral voids.
As total
tetrahedral
voids = 12
Fluorite Structure (CaF2)
8 : 4
Other examples of :
2 1
fluorite structure
General
BaF2, BaCl2, SrF2,
So,
formula = AB2
SrCl2 etc.
Fluorite Structure (CaF2)
rF –
0.225 ≤ rCa2+
< 0.414
√3a
rF – + rCa2+ =
4
Fluorite Structure (CaF2)
Number of nearest
anion
= 8
Distance of nearest a
(ii)
cation =
√2
Number of nearest
cation
= 12
Fluorite Structure (CaF2)
For F− anion,
√3a
(i) Distance of nearest
cation
= 4
Number of nearest
cations
= 4
Distance of nearest a
(ii)
anion =
2
Number of nearest
anions
= 2
Anti-Fluorite Structure (Na2O)
Total Na2O units in O2─ ions form the Number of O2─ ions in
one unit cell = 4 FCC lattice each unit cell = 4
As total
tetrahedral
voids = 8
Na+
O2-
Anti-Fluorite Structure (Na2O)
Ratio of
Coordination 4 : 8
number
1 : 2
Examples
General
Alkali metal oxides M2O
So,
formula = A2B
(M = Li, Na, K, Rb) crystallize
in the anti-fluorite
structure.
Caesium Chloride (CsCl)
+
Cs Cs+ ions occupy
_ Number of Cs+ ions = 1
Cl cubical void
8 : 8
1 : 1
General
So,
formula = AB
Fluorite Structure (CaF2)
rCs+
Experimental ⋍
rCl– 0.93
ratio,
Other examples of
CsCl like structures rCs+
> 0.732
rCl–
Imperfections can
In a perfect crystal, all atoms be because of:
would be on their correct lattice
positions in the structure.
Conditions under which crystals
1
have been developed.
Point defects
in ionic solids
Stoichiometric defects
Defects will only be at
certain lattice positions.
Non-stoichiometric
defects
Impurity defects
Stoichiometric Defects
Point defects
in ionic solids
The formula of a
compound remains Schottky
unchanged despite Stoichiometric
the presence of defects
these defects. Frenkel
Non-stoichiometric
defects
Also known as
thermodynamic
Impurity defects
or intrinsic defects.
Schottky Defect
Perfect
Crystal Schottky defect consists of ion
vacancy in a crystal lattice, but
the stoichiometry of the
compound (and thus, electrical
neutrality) is retained.
Schottky
Defect
Characteristics
Defects Defects
Electrical
Stability
conductivity
Non-Stoichiometric Defects
Point defects
in ionic solids
The formula
Stoichiometric defects of compound
gets modified
because of the
Non-stoichiometric presence of
defects these defects.
Impurity defects
Non-Stoichiometric Defects
Point defects
in ionic solids
Stoichiometric
defects
Metal excess
Non-stoichiometric
defects
Metal
deficiency
Impurity defects
Metal Excess Defect
Example:
NaCl and KCl show such defects
Heating of NaCl
Zn2+
On heating, it loses some
O2- Zn2+ O2- Zn2+ O2- Zn2+ O2-
O2‒ ions in the form of O2
and turns yellow.
Zn2+ O2- Zn2+ O2- Zn2+ O2- Zn2+
Δ 1
ZnO Zn2+ + O
2 2 + 2e‒ electrons
Metal Excess Defect
Point defects
in ionic solids
Stoichiometric
defects
Non-stoichiometric
defects
Substitutional
impurity
Impurity defects
Interstitial
impurity
Substitutional Impurity Defects
Impurity
Each Sr2+ replaces two Na+ sites
Defect by occupying a site of one Na+
and other site remaining vacant.
Substitutional Impurity Defects
Other example:
solid solution of
CdCl2 and AgCl.
Impurity Defects
Point defects
in ionic solids
Stoichiometric
defects
Non-stoichiometric
defects
Substitutional
impurity
Impurity defects
Interstitial
impurity
Interstitial Impurity Defect
Point defects in
non-ionic compounds
Vacancy Impurity
defect defects
Vacancy Defect
Perfect
Crystal Such defect arises when
some of the lattice sites
in the crystal are vacant.
Vacancy
Defect Density of crystal decreases.
Interstitial Defect
Interstitial
Defect Density of crystal increases.
Electrical Properties of Solids
On the basis
of electrical
conductivity
Conductors Insulators
Semiconductors
Electrical Properties of Solids
Conductivity
Type of solid range Examples
(ohm‒1 m‒1)
Germanium (Ge),
Semiconductor 10‒6 to 104
Silicon (Si) etc.
MnO, CoO;
Insulator 10‒20 to 10‒10
NiO, CuO
Band Theory
MO’s
AO’s
Empty
Overlap of
atomic orbitals ABMO
in solids E Nan 1 1 1
gives rise to BMO
bands 3s1 3s1 3s1
of energy Atom 1 Atom 2 Atom n
levels.
Filled with
electrons
Overlapping of Bands
Conduction
band (CB)
Overlapping
of bands
Valence
band (VB)
Band of Orbital in Crystal of Sodium
Band Gap
Conduction
band
3p Energy difference
E between the valence
band and the
1 Valence conduction band
3s band
Electrical Conductivity
CB
CB
CB No Small Large
E Energy Energy Energy
VB Gap Gap Gap
VB VB
Temperature
Thermal vibrations
of the nuclei produce
electrical resistance
Electrical
conductivity
Semiconductors
Electrical
Temperature conductivity
Electron easily
On heating jumps from
VB to CB
Magnetic Properties
Electron
Electron
Atomic Direction
nucleus of spin
(a) (b)
Paramagnetic
Diamagnetic
Ferromagnetic
Antiferromagnetic
Ferrimagnetic
Paramagnetic Substances
In an unmagnetised piece of a
Substances that are attracted
ferromagnetic substance, the domains
very strongly by a magnetic field
are randomly oriented and their
magnetic moments get cancelled.
MnO
Ferromagnetic Substances
Examples
They are weakly attracted by Fe3O4, ferrites like
magnetic field as compared to MgFe2O4 and ZnFe2O4
ferromagnetic substances.
Ferrimagnetic Substances
On heating, ferrimagnetic
substance convert into
paramagnetic substances.