Static random-access memory

Static random-access memory (static RAM or SRAM) is a type

of random-access memory (RAM) that uses latching circuitry
(flip-flop) to store each bit. SRAM is volatile memory; data is lost
when power is removed.

The term static differentiates SRAM from DRAM (dynamic

random-access memory):
A static RAM chip from a Nintendo
SRAM will hold its data permanently in the presence of Entertainment System clone (2K ×
power, while data in DRAM decays in seconds and thus 8 bits)
must be periodically refreshed.
SRAM is faster than DRAM but it is more expensive in
terms of silicon area and cost.
Typically, SRAM is used for the cache and internal registers of a CPU while DRAM is used
for a computer's main memory.

History
Semiconductor bipolar SRAM was invented in 1963 by Robert Norman at Fairchild Semiconductor.[1]
Metal–oxide–semiconductor SRAM (MOS-SRAM) was invented in 1964 by John Schmidt at Fairchild
Semiconductor. It was a 64-bit MOS p-channel SRAM.[2][3]

SRAM was the main driver behind any new CMOS-based technology fabrication process since the
1960s, when CMOS was invented.[4]

In 1964, Arnold Farber and Eugene Schlig, working for IBM, created a hard-wired memory cell, using a
transistor gate and tunnel diode latch. They replaced the latch with two transistors and two resistors, a
configuration that became known as the Farber-Schlig cell. That year they submitted an invention
disclosure, but it was initially rejected.[5][6] In 1965, Benjamin Agusta and his team at IBM created a 16-
bit silicon memory chip based on the Farber-Schlig cell, with 80 transistors, 64 resistors, and 4 diodes.

In April 1969, Intel Inc. introduced its first product, Intel 3101, a SRAM memory chip intended to replace
bulky magnetic-core memory modules; Its capacity was 64 bits (In the first versions, only 63 bits were
usable due to a bug)[7] and was based on bipolar junction transistors[8] it was designed by using
rubylith.[9]

Characteristics
Though it can be characterized as volatile memory, SRAM exhibits data remanence.[10]

SRAM offers a simple data access model and does not require a refresh circuit. Performance and
reliability are good and power consumption is low when idle.[11]
Since SRAM requires more transistors per bit to implement, it is less dense and more expensive than
DRAM and also has a higher power consumption during read or write access. The power consumption of
SRAM varies widely depending on how frequently it is accessed.[11]

Applications

Embedded use
Many categories of industrial and scientific subsystems,
automotive electronics, and similar embedded systems, contain
SRAM which, in this context, may be referred to as ESRAM.[12]
Some amount (kilobytes or less) is also embedded in practically
all modern appliances, toys, etc. that implement an electronic user
interface. SRAM cells on the die of a
STM32F103VGT6 microcontroller
SRAM in its dual-ported form is sometimes used for real-time as seen by a scanning electron
microscope. Manufactured by
digital signal processing circuits.[13]
STMicroelectronics using a 180-
nanometre process. Topology of the
cells is clearly visible.
In computers
SRAM is also used in personal computers, workstations, routers
and peripheral equipment: CPU register files, internal CPU
caches, internal GPU caches and external burst mode SRAM
caches, hard disk buffers, router buffers, etc. LCD screens and
printers also normally employ SRAM to hold the image displayed
Comparison image of 180
(or to be printed). LCDs can have SRAM in their LCD controllers. nanometre SRAM cells on a
SRAM was used for the main memory of many early personal STM32F103VGT6 microcontroller
computers such as the ZX80, TRS-80 Model 100, and VIC-20. as seen by an optical microscope

Some early memory cards in the late 1980s to early 1990s used
SRAM as a storage medium, which required a lithium battery to keep the contents of the SRAM.[14][15]

Integrated on chip
SRAM may be integrated on chip for:

the RAM in microcontrollers (usually from around 32 bytes to a megabyte),

the on-chip caches in more powerful CPUs, such as the x86 family, and many others (from
8 KB, up to many megabytes),
the registers and parts of the state-machines used in some microprocessors (see register
file),
scratchpad memory,
application-specific integrated circuits (ASICs) (usually in the order of kilobytes),
 and in field-programmable gate arrays (FPGAs) and complex programmable logic devices
(CPLDs).

Hobbyists
Hobbyists, specifically home-built processor enthusiasts,[16] often prefer SRAM due to the ease of
interfacing. It is much easier to work with than DRAM as there are no refresh cycles and the address and
data buses are often directly accessible. In addition to buses and power connections, SRAM usually
requires only three controls: Chip Enable (CE), Write Enable (WE) and Output Enable (OE). In
synchronous SRAM, Clock (CLK) is also included.[17]

Types of SRAM

Non-volatile SRAM
Non-volatile SRAM (nvSRAM) has standard SRAM functionality, but they save the data when the power
supply is lost, ensuring preservation of critical information. nvSRAMs are used in a wide range of
situations – networking, aerospace, and medical, among many others[18] – where the preservation of data
is critical and where batteries are impractical.

Pseudostatic RAM
Pseudostatic RAM (PSRAM) is DRAM combined with a self-refresh circuit.[19] It appears externally as
slower SRAM, albeit with a density and cost advantage over true SRAM, and without the access
complexity of DRAM.

By transistor type
Bipolar junction transistor (used in TTL and ECL) – very fast but with high power
consumption
MOSFET (used in CMOS) – low power

By numeral system
Binary
Ternary

By function
Asynchronous – independent of clock frequency; data in and data out are controlled by
address transition. Examples include the ubiquitous 28-pin 8K × 8 and 32K × 8 chips (often
but not always named something along the lines of 6264 and 62C256 respectively), as well
as similar products up to 16 Mbit per chip.
Synchronous – all timings are initiated by the clock edges. Address, data in and other
control signals are associated with the clock signals.
In the 1990s, asynchronous SRAM used to be employed for fast access time. Asynchronous SRAM was
used as main memory for small cache-less embedded processors used in everything from industrial
electronics and measurement systems to hard disks and networking equipment, among many other
applications. Nowadays, synchronous SRAM (e.g. DDR SRAM) is rather employed similarly to
synchronous DRAM – DDR SDRAM memory is rather used than asynchronous DRAM. Synchronous
memory interface is much faster as access time can be significantly reduced by employing pipeline
architecture. Furthermore, as DRAM is much cheaper than SRAM, SRAM is often replaced by DRAM,
especially in the case when a large volume of data is required. SRAM memory is, however, much faster
for random (not block / burst) access. Therefore, SRAM memory is mainly used for CPU cache, small
on-chip memory, FIFOs or other small buffers.

By feature
Zero bus turnaround (ZBT) – the turnaround is the number of clock cycles it takes to change
access to SRAM from write to read and vice versa. The turnaround for ZBT SRAMs or the
latency between read and write cycle is zero.
syncBurst (syncBurst SRAM or synchronous-burst SRAM) – features synchronous burst
write access to SRAM to increase write operation to SRAM.
DDR SRAM – synchronous, single read/write port, double data rate I/O.
Quad Data Rate SRAM – synchronous, separate read and write ports, quadruple data rate
I/O.

Design
A typical SRAM cell is made up of six MOSFETs, and is often
called a 6T SRAM cell. Each bit in the cell is stored on four
transistors (M1, M2, M3, M4) that form two cross-coupled
inverters. This storage cell has two stable states which are used to
denote 0 and 1. Two additional access transistors serve to control
the access to a storage cell during read and write operations. 6T
SRAM is the most common kind of SRAM.[20] In addition to 6T
SRAM, other kinds of SRAM use 4, 5, 7,[21] 8, 9,[20] 10[22] (4T,
5T, 7T 8T, 9T, 10T SRAM), or more transistors per bit.[23][24][25] A six-transistor CMOS SRAM cell.
Four-transistor SRAM is quite common in stand-alone SRAM WL: word line. BL: bit line.
devices (as opposed to SRAM used for CPU caches), implemented
in special processes with an extra layer of polysilicon, allowing
for very high-resistance pull-up resistors.[26] The principal drawback of using 4T SRAM is increased
static power due to the constant current flow through one of the pull-down transistors (M1 or M2).

This is sometimes used to implement more than one (read and/or write) port, which may be useful in
certain types of video memory and register files implemented with multi-ported SRAM circuitry.

Generally, the fewer transistors needed per cell, the smaller each cell can be. Since the cost of processing
a silicon wafer is relatively fixed, using smaller cells and so packing more bits on one wafer reduces the
cost per bit of memory.
Memory cells that use fewer than four transistors are possible;
however, such 3T[27][28] or 1T cells are DRAM, not SRAM (even
the so-called 1T-SRAM).

Access to the cell is enabled by the word line (WL in figure)

which controls the two access transistors M5 and M6 which, in
turn, control whether the cell should be connected to the bit lines:
BL and BL. They are used to transfer data for both read and write
operations. Although it is not strictly necessary to have two bit
Four-transistor SRAM provides
lines, both the signal and its inverse are typically provided in order
advantages in density at the cost of
to improve noise margins and speed. manufacturing complexity. The
resistors must have small
During read accesses, the bit lines are actively driven high and low dimensions and large values.
by the inverters in the SRAM cell. This improves SRAM
bandwidth compared to DRAMs – in a DRAM, the bit line is
connected to storage capacitors and charge sharing causes the bit line to swing upwards or downwards.
The symmetric structure of SRAMs also allows for differential signaling, which makes small voltage
swings more easily detectable. Another difference with DRAM that contributes to making SRAM faster
is that commercial chips accept all address bits at a time. By comparison, commodity DRAMs have the
address multiplexed in two halves, i.e. higher bits followed by lower bits, over the same package pins in
order to keep their size and cost down.

The size of an SRAM with m address lines and n data lines is 2m words, or 2m × n bits. The most
common word size is 8 bits, meaning that a single byte can be read or written to each of 2m different
words within the SRAM chip. Several common SRAM chips have 11 address lines (thus a capacity of
211 = 2,048 = 2k words) and an 8-bit word, so they are referred to as "2k × 8 SRAM".
The dimensions of an SRAM cell on an IC is determined by the minimum feature size of the process used
to make the IC.

SRAM operation
An SRAM cell has three states:

Standby: The circuit is idle.

Reading: The data has been requested.
Writing: Updating the contents.
SRAM operating in read and write modes should have "readability" and "write stability", respectively.
The three different states work as follows:

Standby
If the word line is not asserted, the access transistors M5 and M6 disconnect the cell from the bit lines.
The two cross-coupled inverters formed by M1 – M4 will continue to reinforce each other as long as they
are connected to the supply.

Reading
In theory, reading only requires asserting the word line WL and reading the SRAM cell state by a single
access transistor and bit line, e.g. M6, BL. However, bit lines are relatively long and have large parasitic
capacitance. To speed up reading, a more complex process is used in practice: The read cycle is started by
precharging both bit lines BL and BL, to high (logic 1) voltage. Then asserting the word line WL enables
both the access transistors M5 and M6, which causes one bit line BL voltage to slightly drop. Then the BL
and BL lines will have a small voltage difference between them. A sense amplifier will sense which line
has the higher voltage and thus determine whether there was 1 or 0 stored. The higher the sensitivity of
the sense amplifier, the faster the read operation. As the NMOS is more powerful, the pull-down is easier.
Therefore, bit lines are traditionally precharged to high voltage. Many researchers are also trying to
precharge at a slightly low voltage to reduce the power consumption.[29][30]

Writing
The write cycle begins by applying the value to be written to the bit lines. To write a 0, a 0 is applied to
the bit lines, such as setting BL to 1 and BL to 0. This is similar to applying a reset pulse to an SR-latch,
which causes the flip flop to change state. A 1 is written by inverting the values of the bit lines. WL is
then asserted and the value that is to be stored is latched in. This works because the bit line input-drivers
are designed to be much stronger than the relatively weak transistors in the cell itself so they can easily
override the previous state of the cross-coupled inverters. In practice, access NMOS transistors M5 and
M6 have to be stronger than either bottom NMOS (M1, M3) or top PMOS (M2, M4) transistors. This is
easily obtained as PMOS transistors are much weaker than NMOS when same sized. Consequently, when
one transistor pair (e.g. M3 and M4) is only slightly overridden by the write process, the opposite
transistors pair (M1 and M2) gate voltage is also changed. This means that the M1 and M2 transistors can
be easier overridden, and so on. Thus, cross-coupled inverters magnify the writing process.

Bus behavior
RAM with an access time of 70 ns will output valid data within 70 ns from the time that the address lines
are valid. Some SRAM cells have a "page mode", where words of a page (256, 512, or 1024 words) can
be read sequentially with a significantly shorter access time (typically approximately 30 ns). The page is
selected by setting the upper address lines and then words are sequentially read by stepping through the
lower address lines.

Production challenges
With the introduction of the FinFET transistor implementation of SRAM cells, they started to suffer from
increasing inefficiencies in cell sizes. Over the last 30 years (from 1987 to 2017) with a steadily
decreasing transistor size (node size) the footprint-shrinking of the SRAM cell topology itself slowed
down, making it harder to pack the cells more densely.[4]
Besides issues with size a significant challenge of modern SRAM cells is a static current leakage. The
current, that flows from positive supply (Vdd), through the cell, and to the ground, increases exponentially
when the cell's temperature rises. The cell power drain occurs in both active and idle states, thus wasting
useful energy without any useful work done. Even though in the last 20 years the issue was partially
addressed by the Data Retention Voltage technique (DRV) with reduction rates ranging from 5 to 10, the
decrease in node size caused reduction rates to fall to about 2.[4]

With these two issues it became more challenging to develop energy-efficient and dense SRAM
memories, prompting semiconductor industry to look for alternatives such as STT-MRAM and F-
RAM.[4][31]

Research
In 2019 a French institute reported on a research of an IoT-purposed 28nm fabricated IC.[32] It was based
on fully depleted silicon on insulator-transistors (FD-SOI), had two-ported SRAM memory rail for
synchronous/asynchronous accesses, and selective virtual ground (SVGND). The study claimed reaching
an ultra-low SVGND current in a "sleep" and read modes by finely tuning its voltage.[32]

See also
Flash memory
Miniature Card, a discontinued SRAM memory card standard
In-memory processing

References
1. "1966: Semiconductor RAMs Serve High-speed Storage Needs" ([Link]
[Link]/siliconengine/semiconductor-rams-serve-high-speed-storage-needs/). Computer
History Museum. Retrieved 19 June 2019.
2. "1970: MOS dynamic RAM competes with magnetic core memory on price" ([Link]
[Link]/siliconengine/mos-dynamic-ram-competes-with-magnetic-core-memory-o
n-price/). Computer History Museum.
3. "Memory lectures" ([Link]
[Link]) (PDF).
4. Walker, Andrew (December 17, 2018). "The Trouble with SRAM" ([Link]
he-trouble-with-sram/). EE Times.
5. US 3354440A ([Link]
A), Arnold S. Farber & Eugene S. Schlig, "Nondestructive memory array", issued 1967-11-
21, assigned to IBM
6. Emerson W. Pugh; Lyle R. Johnson; John H. Palmer (1991). IBM's 360 and Early 370
Systems ([Link] MIT Press. p. 462.
ISBN 9780262161237.
7. Volk, Andrew M.; Stoll, Peter A.; Metrovich, Paul (First Quarter 2001). "Recollections of Early
Chip Development at Intel" ([Link]
s/research/[Link]#page=11) (PDF). Intel Technology
Journal. 5 (1): 11 – via Intel.
 8. "Intel at 50: Intel's First Product – the 3101" ([Link]
[Link] Intel Newsroom.
2018-05-14. Archived from the original ([Link]
st-product-3101/) on 2023-02-01. Retrieved 2023-02-01.
9. Intel 64 bit static RAM rubylith : 6 ([Link]
18783), c. 1970, retrieved 2023-01-28
10. Sergei Skorobogatov (June 2002). "Low temperature data remanence in static RAM" (http://
[Link]/techreports/[Link]). University of Cambridge, Computer
Laboratory. doi:10.48456/tr-536 ([Link] Retrieved 2008-02-27.
11. Null, Linda; Lobur, Julia (2006). The Essentials of Computer Organization and Architecture
([Link] Jones and Bartlett Publishers.
p. 282. ISBN 978-0763737696. Retrieved 2021-09-14.
12. Fahad Arif (Apr 5, 2014). "Microsoft Says Xbox One's ESRAM is a "Huge Win" – Explains
How it Allows Reaching 1080p/60 FPS" ([Link]
n-explains-reaching-1080p60-fps/). Retrieved 2020-03-24.
13. Shared Memory Interface with the TMS320C54x DSP ([Link]
[Link]) (PDF), retrieved 2019-05-04
14. Stam, Nick (December 21, 1993). "PCMCIA's System Architecture" ([Link]
m/books?id=x2Fa5SDi0G8C&dq=memory+cards+SRAM+battery&pg=PA270). PC Mag. Ziff
Davis, Inc. – via Google Books.
15. Matzkin, Jonathan (December 26, 1989). "$399 Atari Portfolio Takes on Hand-held Poqet
PC" ([Link]
g=PT318). PC Mag. Ziff Davis, Inc. – via Google Books.
16. "Homemade CPU – from scratch : Svarichevsky Mikhail" ([Link]
-cpus). [Link].
17. "Embedded Systems Course- module 15: SRAM memory interface to microcontroller in
embedded systems" ([Link]
Retrieved 2024-04-12.
18. Computer organization ([Link] (4th ed.). [S.l.]:
McGraw-Hill. 1996-07-01. ISBN 978-0-07-114323-3.
19. "3.0V Core Async/Page PSRAM Memory" ([Link]
cron%20Technology%20Inc%20PDFs/[Link]) (PDF). Micron.
Retrieved 2019-05-04.
20. Rathi, Neetu; Kumar, Anil; Gupta, Neeraj; Singh, Sanjay Kumar (2023). "A Review of Low-
Power Static Random Access Memory (SRAM) Designs" ([Link]
ent/10134887). 2023 IEEE Devices for Integrated Circuit (DevIC). pp. 455–459.
doi:10.1109/DevIC57758.2023.10134887 ([Link]
134887). ISBN 979-8-3503-4726-5. S2CID 258984439 ([Link]
usID:258984439).
21. Chen, Wai-Kai (October 3, 2018). The VLSI Handbook ([Link]
rMsqBgAAQBAJ&dq=5+transistor+sram&pg=SA1-PA35). CRC Press. ISBN 978-1-4200-
0596-7 – via Google Books.
22. Kulkarni, Jaydeep P.; Kim, Keejong; Roy, Kaushik (2007). "A 160 mV Robust Schmitt Trigger
Based Subthreshold SRAM". IEEE Journal of Solid-State Circuits. 42 (10): 2303.
Bibcode:2007IJSSC..42.2303K ([Link]
doi:10.1109/JSSC.2007.897148 ([Link]
S2CID 699469 ([Link]
23. "0.45-V operating Vt-variation tolerant 9T/18T dual-port SRAM" ([Link]
ocument/5770728). March 2011. pp. 1–4. doi:10.1109/ISQED.2011.5770728 ([Link]
g/10.1109%2FISQED.2011.5770728). S2CID 6397769 ([Link]
pusID:6397769).
24. United States Patent 6975532: Quasi-static random access memory ([Link]
[Link]/publicationDetails/biblio?FT=D&date=20051213&DB=EPODOC&locale=en_EP&
CC=US&NR=6975532B1&KC=B1&ND=4)
25. "Area Optimization in 6T and 8T SRAM Cells Considering Vth Variation in Future Processes
-- MORITA et al. E90-C (10): 1949 -- IEICE Transactions on Electronics" ([Link]
[Link]/web/20081205085037/[Link]
49). Archived from the original ([Link]
1949) on 2008-12-05.
26. Preston, Ronald P. (2001). "14: Register Files and Caches" ([Link]
30509010902/[Link] (PDF).
The Design of High Performance Microprocessor Circuits. IEEE Press. p. 290. Archived
from the original ([Link]
(PDF) on 2013-05-09. Retrieved 2013-02-01.
27. United States Patent 6975531: 6F2 3-transistor DRAM gain cell ([Link]
[Link]/[Link])
28. 3T-iRAM(r) Technology ([Link]
29. Kabir, Hussain Mohammed Dipu; Chan, Mansun (January 2, 2015). "SRAM precharge
system for reducing write power" ([Link]
14.970761). HKIE Transactions. 22 (1): 1–8. doi:10.1080/1023697X.2014.970761 ([Link]
[Link]/10.1080%2F1023697X.2014.970761). S2CID 108574841 ([Link]
org/CorpusID:108574841) – via CrossRef.
30. "CiteSeerX" ([Link]
CiteSeerX. CiteSeerX [Link].3735 ([Link]
[Link].3735).
31. Walker, Andrew (February 6, 2019). "The Race is On" ([Link]
on/). EE Times.
32. Reda, Boumchedda (May 20, 2019). "Ultra-low voltage and energy efficient SRAM design
with new technologies for IoT applications" ([Link]
ument). Grenoble Alpes University.

Retrieved from "[Link]