There are 3 reasons for this : 1.
An individual MOS transistor occupies less chip area2.
MOS fabrication process involves fewer steps and as aresult achieves fewer critical defects per unit chip areathan in bipolar circuit fabrication.3.
Dynamic circuit techniques that require fewer transistorsto realise a given circuit function are practical in MOStechnology.
LSI (and thus VLSI) circuits significantly cheaper tomanufacture than bipolar circuits of equivalent function.