Idealized Ion Implantation Systems

Schematic of an ion implanter

Schematic for a Freeman ion source. Solids can be vaporized in the oven heater
while gaseous sources may be injected directly into the arc chamber.
Mass separation stage of an ion implanter showing perpendicular magnetic
field and ion trajectory. D corresponds to the displacement for an ion of
M+δ M.
 Mυ 2
= qυB
r
Where ν is the magnitude of the ion velocity, q is the charge on the ion, M is
the ion mass, B is the magnetic field intensity, and r is the radius of curvature.

2E 2qVext
υ= =
M M

Mυ 1 M
r= = 2 Vext
qB B q

1 δM  L 
D= 1 − cos φ + sin φ 
2R M R
Example: Mass Resolution
If an analyzing magnet bends the ion beam through 450 and L = R = 50 cm, find
the displacement D that would be seen if B10 is sent through the system when it is
tuned for B11 . If the extraction potential is 20 kV, find the required field.
Since the difference in mass is 1
amu, δM 1
= = 0.1
M 10
and
1
2
1
[ ]
D = 50 cm 1 − cos450 + sin450 = 2.5cm
10
Since slit widths are typically a few millimeters, this analyzer could easily
resolve these two masses. Obviously, heavier mass species will be more
difficult to resolve and may require a larger radius magnet. According to
previous Equation
1 10 ×1.67 ×10 −27 kg
B= 2 −19
2 × 10 4
V = 0.13T = 1.3kG
0.50m 1.6 ×10 C

where the units of field are tesla (T) and kilogauss (kG).
 B11+ + e − → B11

Typical scanning systems for ion implanters. (A) Electrostatic rastering

commonly used in medium current machines. (B) Semielectrostatic
scanning used on some high current machines.
energy = ∫ power dt = ∫ IV dt = V ∫ I dt = VQ
Coulomb Scattering

Typical scattering problem. Figure inset shows electrostatic

potential as a function of distance between the nuclei. The
impact parameter is labeled b.
Vertical Projected Range

The total distance that an ion travels in the solid is the range. The
projection of this distance along the depth axis is the projected
range, Rp.
Nuclear and electronic components of S(E) for several
common silicon dopants as a function of energy.