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2sk2651

2sk2651

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Published by Maria Reinoso
une diode utile
une diode utile

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Categories:Topics, Art & Design
Published by: Maria Reinoso on Nov 27, 2011
Copyright:Attribution Non-commercial

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11/27/2011

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2SK2651-01MR
N-channel MOS-FET
FAP-IIS Series
900V
2,5Ω
6A 50W
>Features > Outline Drawing
-High Speed Switching-Low On-Resistance-No Secondary Breakdown-Low Driving Power-High Voltage-V
GS
= ± 30V Guarantee-Repetitive Avalanche Rated
>Applications
-Switching Regulators-UPS-DC-DC converters-General Purpose Power Amplifier
>Maximum Ratings and Characteristics > Equivalent Circuit
-Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item SymbolRatingUnitDrain-Source-VoltageV
DS
900 VContinous Drain CurrentI
D
6 APulsed Drain CurrentI
D(puls)
24 AGate-Source-VoltageV
GS
±30 VRepetitive or Non-Repetitive (T
ch
 
150°C)I
AR
6 AAvalanche EnergyE
AS
71,9 mJMax. Power DissipationP
D
50 WOperating and Storage Temperature RangeT
ch
150 °CT
stg
-55 ~ +150°C
-Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Item SymbolTest conditionsMin. Typ. Max. UnitDrain-Source Breakdown-VoltageV
(BR)DSS
I
D
=1mA V
GS
=0V900 VGate Threshhold VoltageV
GS(th)
I
D
=1mA V
DS=
V
GS
3,5 4,0 4,5 VZero Gate Voltage Drain CurrentI
DSS
V
DS
=900V T
ch
=25°C10 500 µAV
GS
=0V T
ch
=125°C0,2 1,0 mAGate Source Leakage CurrentI
GSS
V
GS
=±30V V
DS
=0V10 100 nADrain Source On-State ResistanceR
DS(on)
I
D
=3A V
GS
=10V1,87 2,5
Forward Transconductanceg
fs
I
D
=3A V
DS
=25V4 SInput CapacitanceC
iss
V
DS
=25V900 pFOutput CapacitanceC
oss
V
GS
=0V130 pFReverse Transfer CapacitanceC
rss
f=1MHz 70 pFTurn-On-Time t
on
(t
on
=t
d(on)
+t
r
)t
d(on)
V
CC
=600V25 nst
r
I
D
=6A80 nsTurn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)t
d(off)
V
GS
=10V70 nst
f
R
GS
=10
40 nsAvalanche CapabilityI
AV
L = 100µHT
ch
=25°C6 ADiode Forward On-VoltageV
SD
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C1,0 VReverse Recovery Timet
rr
I
F
=I
DR
V
GS
=0V850 nsReverse Recovery ChargeQ
rr
-dI
F
 /dt=100A/µs T
ch
=25°C8,5 µC- Thermal CharacteristicsItem SymbolTest conditionsMin. Typ. Max. UnitThermal ResistanceR
th(ch-c)
channel to case3,125°C/WR
th(ch-a)
channel to air62,5 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98

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