A semiconductor device has material removed from the back of the substrate and a manufacturing process is provided for manufacturing these devices. A buffer layer of differing material provided between the active layers and the substrate prevents etching of the active layers during the removal process. The source-to-drain path may be laid out on the surface of the chip in a variety of patterns, including "packed" patterns concentrating a large path area in a small surface area of the chip.
A semiconductor device has material removed from the back of the substrate and a manufacturing process is provided for manufacturing these devices. A buffer layer of differing material provided between the active layers and the substrate prevents etching of the active layers during the removal process. The source-to-drain path may be laid out on the surface of the chip in a variety of patterns, including "packed" patterns concentrating a large path area in a small surface area of the chip.
A semiconductor device has material removed from the back of the substrate and a manufacturing process is provided for manufacturing these devices. A buffer layer of differing material provided between the active layers and the substrate prevents etching of the active layers during the removal process. The source-to-drain path may be laid out on the surface of the chip in a variety of patterns, including "packed" patterns concentrating a large path area in a small surface area of the chip.