Enrollment No. _________________ BE. Sem-III Subject Code: 131101 Time: 10:00 to 11:00 am Q.

1 Attempt any two: Branch: Computer science &Engineering Subject Name: Basic Electronics Total Marks: 30 (10)

(1) (i) Draw and explain the input-output characteristics of PNP type silicon transistor in common emitter configuration with circuit diagram. (ii) Why CE configuration is widely used? (2) Derive the relationship between current gain of CE, CB and CC configuration of transistor. (3) Which are the different methods for transistor biasing? Explain Collector to Base bias method in detail. Q.2 (a) Define stability factor in different ways: (b) Attempt any two: (02) (08)

(1) (i) Given a germanium transistor with =70 and biased by base resistor method. Determine the operating poing Q. (ii) If another transistor of the same batch with =45 is used, what will be the new value of Ic for the same value of base resistor Rb?

Fig1: Q-2(b)-1 (2) For the circuit shown in figure below, draw the d.c. load line and locate its quiescent or d.c. working point.

Fig1: Q-2(b)-2 (3) (i) In a transistor circuit, Ie=8mA, Ic=7.89 mA, Iceo=210A. Calculate , current Icbo and . (ii) What will be the new value of Ic if =0.91 for the same value of Ie. Q.3 (a) Draw the circuit diagram of full wave rectifier and explain its working with output and input waveforms. Also derive the expression for D.C. current. (07)

OR (a) Derive expressions for the following: (i) Idc (ii) Irms (iii)Edc (iv) Pdc (v) Pac (vi) Efficiency (vii)Ripple factor

(b) Using diode equation, find the P-N Junction (Germanium) diode current (03) for a forward bias of 0.42 V at room temperature 25 C with reverse saturation current equal to 3mA. ----------------BEST OF LUCK----------------