MOS fabr ication pr ocess

nMOS CMOS BiCMOS

for logic for I/O and driver circuit

nMOS fabr ication

Summar y of an nMOS pr ocess

Depletion mode only

SiO 2

Mask Layout
L-Edit layout program

Technology Setup
Setup > Technology > MOSIS: Orbit 2U SCNA

CIF Layer s
Setup > CIF

CIF Layer Names

CMOS Poly Gate (CPF) CMOS Electr ode (CPS) CMOS Active Ar ea CMOS Metal Fir st CMOS Metal Second CMOS Well N-diff CMOS Select N CMOS Select P CMOS Contact Poly CMOS Contact Electr ode CMOS Contact Active CMOS Via Poly (Poly1) (Poly2) Active (Thinox=n-diff + tr ansistor channel) Metal 1 Metal 2 N well N select P select Poly contact Poly2 contact Active contact Via

CMOS Over glass

Over glass

Enhancement Mode NMOS Mask Layout

(1) Use Layout program (L-Edit) to draw 6 masks of an enhancement mode nMOS process by using L-edit and Orbit 2m double metal, double poly, CMOS technology.
4 4

10

20

2 2 4 4 4 4 28

Mask #1- CAA

Use CAA (CMOS Active Ar ea) layer to dr aw a W=28 H=20 r ectangular and define the n-diffusion +tr ansistor channel.

4 4

20

2 2 4 4 4 4 28

Mask #2- CPG

Use CPG (CMOS Poly Gate) layer to dr aw a W=4 H=24 and a W=8 H=8 r ectangular s and define the poly gate.
4 4

10

20

2 2 4 4 4 4 28

Mask #2 again for n +-diffusion (CSN)

Use CSN (CMOS select N) to dr aw a W=32 H=24 r ectangular for you to select the n-diffusion r egion within CAA, but not pr otected by CPG.

4 4

10

20

2 2 4 4 4 4 28

Cr oss-Section

Mask #3- CCP & CCA

CCP

CCA

CCA

Use CCP (CMOS Contact Poly) and CCA (CMOS Contact Active) to dr aw 5 W=4 H=4 r ectangular to open the poly contacts thr ough thick OX

4 4

10

20

2 2 4 4 4 4 28

Cr oss Section after Mask #3

Mask #4 - CMF

CMF

Use CMF to dr aw metal lines to contact Poly and n-diffusion thr ough CCP and CCA open ar eas.

4 4

10

20

2 2 4 4 4 4 28

Cr oss Section after Mask #4

Mask #5 Via layer

CVA
Use CVA to dr aw 3 W=4, H=4 via openings thr ough OX.

Mask #6 Over galss Opening

COG
Use COG to dr aw 3 W=4, H=4 via openings thr ough Over glass (demo pur pose, violate design r ules).

Summar y of nMOS Layer s

Over glass
Poly1(CPG)

OX n +- diffusion

COG CVA Metal (CMF) OX

n +- diffusion Thin OX

P-doped Si wafer