Section A Self-Test

A1. Consider an n-type silicon in which the dopant concentration ND=1017. Find the electron and hole concentrations at equilibrium for T=250oK, 300oK, and 350oK. Find the resistivity of (a) intrinsic silicon and (b) p-type silicon with NA=1016cm-3. Use ni=1.5x1010cm-3 and assume that for intrinsic silicon, n=1350cm2/Vs and p=480cm2/Vs, and for the doped silicon n=1110cm2/Vs and p=400cm2/Vs. For a silicon pn junction with NA=1017cm-3 and ND=1016cm-3 find, at T=300oK, the built-in voltage, the width of the depletion region, and the distance it extends in the p side and the n side of the junction. Use ni=1.5x1010cm-3. In a 10m long bar of donor-doped silicon, what donor concentration is needed to realize a drift current density of 1mA/m2 in response to an applied voltage of 0.5V? Although the carrier mobilities change with doping concentration, you may assume n to be constant and use the value for intrinsic silicon, 1350cm2/Vs. Calculate the built-in voltage of a pn junction in which the p and n regions are doped equally with 1016 atoms/cm3. Assume ni=1010cm-3. With no external voltage applied, what is the width of the depletion region, and how far does it extend into the p and n regions? If the cross-sectional area of the junction is 100m2, find the magnitude of the charge stored on either side of the junction.

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A5.