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SRAM Design

Increase Read Noise Margin

Vi Vo

d >> a Increase cell Vdd Increase Vth

Vdd Vo

SNMHigh SNMLow Vi

Reduce wordline Vdd Dont allow readcurrent through cell

SRAM Cell Design: Write Margin

Vi Vo

Vdd Write Noise Margin Vo

Vi

How to Improve Write Margin

Vi Vo

a >> p Decrease Cell Vdd Increase WL Vdd

Vdd Write Noise Margin Vo

Vi

SRAM Cell Sizing

Min Size

Tradeoffs Read Noise Margin Cell Read Current Write Noise Margin Cell Size

d >> a d ~ 3 x a a >> p

Layout of SRAM Cell

[Takeda, et. al., JSSC, Jan 2006]

7-T Cell

[Takeda, et. al., JSSC, Jan 2006]

Read/Write Circuitry

[Takeda, et. al., JSSC, Jan 2006]

Read Waveforms

[Takeda, et. al., JSSC, Jan 2006]

Write Waveforms

[Takeda, et. al., JSSC, Jan 2006]

7-T Cell Layout

[Takeda, et. al., JSSC, Jan 2006]

Hiding gaps

[Takeda, et. al., JSSC, Jan 2006]

Area overheads

Same configuration
[Takeda, et. al., JSSC, Jan 2006]

Same Speed

8-T Cell

[Takeda, et. al., JSSC, Jan 2006]

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