Professional Documents
Culture Documents
TIP31/TIP31A/TIP31B/TIP31C: NPN Epitaxial Silicon Transistor
TIP31/TIP31A/TIP31B/TIP31C: NPN Epitaxial Silicon Transistor
July 2008
TIP31/TIP31A/TIP31B/TIP31C
NPN Epitaxial Silicon Transistor
Features
Complementary to TIP32/TIP32A/TIP32B/TIP32C
VCEO
Collector-Emitter Voltage : TIP31 : TIP31A : TIP31B : TIP31C Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C)
VEBO IC ICP IB PC
TJ TSTG
www.fairchildsemi.com 1
IC = 30mA, IB = 0
40 60 80 100
V V V V
ICEO
0.3 0.3
mA mA
ICES
VCE(sat) VBE(sat) fT
* Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product
www.fairchildsemi.com 2
Typical Characteristics
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
1000
10000
VCE = 4V
IC/IB = 10
100
1000
VBE(sat)
10
100
VCE(sat)
10
50
IC(MAX) (PULSE)
45
IC(MAX) (DC)
s 5m s 1m
100s
40 35 30 25 20 15 10 5 0
TIP31 VCEO MAX. TIP31A VCEO MAX. TIP31B VCEO MAX. TIP31C VCEO MAX.
0.1 10 100
25
50
o
75
100
125
150
175
200
www.fairchildsemi.com 3
Mechanical Dimensions
TO220
www.fairchildsemi.com 4
www.fairchildsemi.com 5