BAV99LT1

Preferred Device

Dual Series Switching Diode

MAXIMUM RATINGS (Each Diode)
Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (Note 1.) (averaged over any 20 ms period) Repetitive Peak Forward Current NonRepetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 S Symbol VR IF IFM(surge) VRRM IF(AV) Value 70 215 500 70 715 Unit Vdc mAdc mAdc V mA ANODE 1 CATHODE 2

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3 CATHODE/ANODE

IFRM IFSM

450 2.0 1.0 0.5

mA A
3 1 2

MARKING DIAGRAM

A7 M

THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR5 Board (Note 1.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate (Note 2.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range Symbol PD Max 225 1.8 RqJA PD 556 300 Unit mW mW/C C/W

CASE 318 SOT23 STYLE 11

A7 = Device Code M = Date Code

ORDERING INFORMATION
mW Device BAV99LT1 2.4 RqJA TJ, Tstg 417 65 to +150 mW/C C/W C
Preferred devices are recommended choices for future use and best overall value.

Package SOT23

Shipping 3000/Tape & Reel

OFF CHARACTERISTICS (TA = 25C unless otherwise noted) (Each Diode)

Characteristic Reverse Breakdown Voltage (I(BR) = 100 A) Reverse Voltage Leakage Current (VR = 70 Vdc) (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc, TJ = 150C) Diode Capacitance (VR = 0, f = 1.0 MHz) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) Symbol V(BR) IR Min 70 Max 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Unit Vdc mAdc

CD VF

pF mVdc

Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100 W Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) 1. FR5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

trr VFR

ns V

Semiconductor Components Industries, LLC, 2000

September, 2000 Rev. 1

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Publication Order Number: BAV99LT1/D

BAV99LT1
820 +10 V 2k 100 H 0.1 F DUT IF 0.1 F tr 10% tp t IF trr t

50 OUTPUT PULSE GENERATOR

50 INPUT SAMPLING OSCILLOSCOPE

90% VR IR INPUT SIGNAL

iR(REC) = 1 mA OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA)

Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp trr

Figure 1. Recovery Time Equivalent Test Circuit

CURVES APPLICABLE TO EACH DIODE

100 IF, FORWARD CURRENT (mA) I R, REVERSE CURRENT ( A) 10 TA = 150C 1.0 TA = 125C

10 TA = 85C 1.0 TA = 25C TA = -40C 0.1 0.2 0.4 0.6 0.8 1.0 1.2

0.1

TA = 85C TA = 55C

0.01 TA = 25C 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS)

0.001

VF, FORWARD VOLTAGE (VOLTS)

Figure 2. Forward Voltage

Figure 3. Leakage Current

0.68 CD , DIODE CAPACITANCE (pF)

0.64

0.60

0.56

0.52

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitance

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BAV99LT1 INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection
0.037 0.95

interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process.
0.037 0.95

0.079 2.0 0.035 0.9 0.031 0.8

inches mm

SOT23 SOT23 POWER DISSIPATION The power dissipation of the SOT23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT23 package, PD can be calculated as follows:
PD = TJ(max) TA RJA

into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts.
PD = 150C 25C 556C/W = 225 milliwatts

The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values

The 556C/W for the SOT23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint.

SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. Always preheat the device. The delta temperature between the preheat and soldering should be 100C or less.* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. The soldering temperature and time shall not exceed 260C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.

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BAV99LT1
PACKAGE DIMENSIONS

A L

SOT23 (TO236AB) PLASTIC PACKAGE CASE 31809 ISSUE AF

3 1 2

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60

C D H K J

STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE ANODE

Thermal Clad is a trademark of the Bergquist Company

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 3036752175 or 8003443860 Toll Free USA/Canada Fax: 3036752176 or 8003443867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 3036752167 or 8003443810 Toll Free USA/Canada N. American Technical Support: 8002829855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+1) 3033087140 (MonFri 2:30pm to 7:00pm CET) Email: ONlitgerman@hibbertco.com French Phone: (+1) 3033087141 (MonFri 2:00pm to 7:00pm CET) Email: ONlitfrench@hibbertco.com English Phone: (+1) 3033087142 (MonFri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLLFREE ACCESS*: 0080044223781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 3033087143 (MonFri 8:00am to 5:00pm MST) Email: ONlitspanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: 3036752121 (TueFri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 00180044223781 Email: ONlitasia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031 Phone: 81357402700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local Sales Representative.

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BAV99LT1/D