MITSUBISHI Nch POWER MOSFET

FS22SM-12A
HIGH-SPEED SWITCHING USE

FS22SM-12A

OUTLINE DRAWING
15.9MAX.

Dimensions in mm
4.5 1.5

5.0
f 3.2

2
2

20.0

1.0

5.45

5.45

19.5MIN.

4.4

0.6

2.8

G 10V DRIVE G VDSS ................................................................................ 600V G rDS (ON) (MAX) .............................................................. 0.30 G ID ......................................................................................... 22A

GATE DRAIN SOURCE DRAIN

TO-3P

APPLICATION SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.

MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA PD Tch Tstg

(Tc = 25C)

Parameter Drain-source voltage Gate-source voltage Drain current VGS = 0V VDS = 0V

Conditions

Ratings 600 30 22 66 22 200 55 ~ +150 55 ~ +150 4.8

Unit V V A A A W C C g Sep. 2001

Drain current (Pulsed) Avalanche drain current (Pulsed) L = 200H Maximum power dissipation Channel temperature Storage temperature Weight Typical value

MITSUBISHI Nch POWER MOSFET

FS22SM-12A
HIGH-SPEED SWITCHING USE

ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter

(Tch = 25C)

Test conditions ID = 1mA, VGS = 0V IG = 100A, VDS = 0V VGS = 25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 11A, VGS = 10V ID = 11A, VGS = 10V ID = 11A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz

Limits Min. 600 30 2.5 14.4 Typ. 3.0 0.23 2.53 24.0 4600 420 100 60 100 630 140 1.5 Max. 10 1 3.5 0.30 3.30 2.0 0.625

Unit V V A mA V V S pF pF pF ns ns ns ns V C/W

Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance

VDD = 200V, ID = 11A, VGS = 10V, RGEN = R GS = 50

IS = 11A, VGS = 0V Channel to case

PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 250 MAXIMUM SAFE OPERATING AREA
7 5 3 2

POWER DISSIPATION PD (W)

tw = 10s 100s 1ms

10 ms

200

DRAIN CURRENT ID (A)

101

7 5 3 2

150

100

100

7 5 3 2

TC = 25C Single Pulse

DC

50

101
7 5 3 2

50

100

150

200

2 3

5 7 101

2 3

5 7 102

2 3

5 7

CASE TEMPERATURE TC (C)

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS (TYPICAL) 50

VGS = 20V,10V,8V,6V

OUTPUT CHARACTERISTICS (TYPICAL) 20

DRAIN CURRENT ID (A)

40
TC = 25C Pulse Test

DRAIN CURRENT ID (A)

16
VGS = 20V,10V,8V,6V,5V PD = 200W

30
5V

12

20
PD = 200W 4V

8
TC = 25C Pulse Test

10

4
4V

10

20

30

40

50

12

16

20

DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN-SOURCE VOLTAGE VDS (V) Sep. 2001

MITSUBISHI Nch POWER MOSFET

FS22SM-12A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40
TC = 25C Pulse Test

ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5

DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) ()

32

0.4

24

0.3
VGS = 10V

16
ID = 40A 30A 20A 10A

0.2

VGS = 20V

0.1
TC = 25C Pulse Test

12

16

20

0 101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A)

GATE-SOURCE VOLTAGE VGS (V)

TRANSFER CHARACTERISTICS (TYPICAL) 40 103

7 5 3 2

FORWARD TRANSFER ADMITTANCE VS. DRAIN CURRENT (TYPICAL)

DRAIN CURRENT ID (A)

FORWARD TRANSFER ADMITTANCE yfs (S)

32

102
7 5 3 2

TC = 25C,75C,125C

24

16

101
7 5 3 2 VDS = 10V Pulse Test 2 3 5 7 101 2 3 5 7 102

TC = 25C VDS = 10V Pulse Test

12

16

20

100 0 10

GATE-SOURCE VOLTAGE VGS (V)

DRAIN CURRENT ID (A)

CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL)

104 7 5

SWITCHING CHARACTERISTICS (TYPICAL) 103

Ciss 7 5 td(off)

SWITCHING TIME (ns)

CAPACITANCE Ciss, Coss, Crss (pF)

3 2 103 7 5 3 2 102 7 5 3 2 101

3 2 tf

Coss

102
7 5 3 2 td(on)

tr

Crss TCh = 25C VGS = 0V f = 1MHZ 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3

TCh = 25C VGS = 10V VDD = 200V RGEN = RGS = 50 2 3 5 7 101 2 3 5 7 102

101

100

DRAIN-SOURCE VOLTAGE VDS (V)

DRAIN CURRENT ID (A)

Sep. 2001

MITSUBISHI Nch POWER MOSFET

FS22SM-12A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS. GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40
VGS = 0V Pulse Test TC = 25C 75C 125C

GATE-SOURCE VOLTAGE VGS (V)

20

16

SOURCE CURRENT IS (A)

400

VDS = 100V 200V 400V

32

12

24

16

4
TCh = 25C ID = 22A

80

160

240

320

0.8

1.6

2.4

3.2

4.0

GATE CHARGE Qg (nC)

SOURCE-DRAIN VOLTAGE VSD (V)

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)

DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)

ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101

VGS = 10V 7 ID = 11A 5 Pulse Test 3 2

THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0

VDS = 10V ID = 1mA

GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)

4.0

3.0

100
7 5 3 2

2.0

1.0

101

50

50

100

150

50

50

100

150

CHANNEL TEMPERATURE Tch (C)

CHANNEL TEMPERATURE Tch (C)

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)

TRANSIENT THERMAL IMPEDANCE Zth (chc) (C/W)

DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)

BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4

VGS = 0V ID = 1mA

TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101

7 5 3 2

1.2

100
7 5 3 2

1.0

D = 1.0 = 0.5 = 0.2 = 0.1 = 0.05 = 0.02 Single Pulse = 0.01 PDM
tw T D= tw T

0.8

101
7 5 3 2

0.6

0.4

50

50

100

150

102 4 10 2 3 5 7103 2 3 5 7102 2 3 5 7101 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s)

CHANNEL TEMPERATURE Tch (C)

Sep. 2001

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