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GlobalOptoisolator

The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. Most Economical Optoisolator Choice for Medium Speed, Switching Applications Meets or Exceeds All JEDEC Registered Specifications To order devices that are tested and marked per VDE 0884 requirements, the suffix V must be included at end of part number. VDE 0884 is a test option. Applications General Purpose Switching Circuits Interfacing and coupling systems of different potentials and impedances I/O Interfacing Solid State Relays MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating INPUT LED Reverse Voltage Forward Current Continuous LED Power Dissipation @ TA = 25C with Negligible Power in Output Detector Derate above 25C OUTPUT TRANSISTOR CollectorEmitter Voltage EmitterCollector Voltage CollectorBase Voltage Collector Current Continuous Detector Power Dissipation @ TA = 25C with Negligible Power in Input LED Derate above 25C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Total Device Power Dissipation @ TA = 25C Derate above 25C Ambient Operating Temperature Range Storage Temperature Range Soldering Temperature (10 sec, 1/16 from case) VISO PD TA Tstg TL 7500 250 2.94 55 to +100 55 to +150 260 Vac(pk) mW mW/C C C C VCEO VECO VCBO IC PD 30 7 70 150 150 1.76 Volts Volts Volts mA mW mW/C VR IF PD 3 60 120 1.41 Volts mA mW mW/C 1 2 3 Symbol Value Unit

4N25 4N26 4N27 4N28

STANDARD THRU HOLE

SCHEMATIC

6 5 4 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR BASE

1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

4N25 4N26 4N27 4N28


ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)(1)
Characteristic INPUT LED Forward Voltage (IF = 10 mA) TA = 25C TA = 55C TA = 100C VF 1.15 1.3 1.05 18 1.5 100 Volts Symbol Min Typ(1) Max Unit

Reverse Leakage Current (VR = 3 V) Capacitance (V = 0 V, f = 1 MHz) OUTPUT TRANSISTOR CollectorEmitter Dark Current (VCE = 10 V, TA = 25C (VCE = 10 V, TA = 100C) CollectorBase Dark Current (VCB = 10 V) CollectorEmitter Breakdown Voltage (IC = 1 mA) CollectorBase Breakdown Voltage (IC = 100 A) EmitterCollector Breakdown Voltage (IE = 100 A) DC Current Gain (IC = 2 mA, VCE = 5 V) CollectorEmitter Capacitance (f = 1 MHz, VCE = 0) CollectorBase Capacitance (f = 1 MHz, VCB = 0) EmitterBase Capacitance (f = 1 MHz, VEB = 0) COUPLED Output Collector Current (IF = 10 mA, VCE = 10 V) 4N25,26 4N27,28 CollectorEmitter Saturation Voltage (IC = 2 mA, IF = 50 mA) TurnOn Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3) TurnOff Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3) Rise Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3) Fall Time (IF = 10 mA, VCC = 10 V, RL = 100 )(3) Isolation Voltage (f = 60 Hz, t = 1 sec)(4) Isolation Resistance (V = 500 V)(4) Isolation Capacitance (V = 0 V, f = 1 MHz)(4) 1. 2. 3. 4. 4N25,26,27 4N28 All Devices

IR CJ

A pF

ICEO ICEO ICBO V(BR)CEO V(BR)CBO V(BR)ECO hFE CCE CCB CEB IC (CTR)(2)

30 70 7

1 1 1 0.2 45 100 7.8 500 7 19 9

50 100

nA A nA Volts Volts Volts pF pF pF

mA (%) 2 (20) 1 (10) 7 (70) 5 (50) 0.15 2.8 4.5 1.2 1.3 0.2 0.5 Volts s s s s Vac(pk) pF

VCE(sat) ton toff tr tf VISO RISO CISO

7500 1011

Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For test circuit setup and waveforms, refer to Figure 11. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

4N25 4N26 4N27 4N28

TYPICAL CHARACTERISTICS
2 VF, FORWARD VOLTAGE (VOLTS) PULSE ONLY PULSE OR DC 1.8 I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) 10 NORMALIZED TO: IF = 10 mA 1

1.6 1.4 TA = 55C 1.2 1 1 25C 100C 10 100 IF, LED FORWARD CURRENT (mA) 1000

0.1

0.01

0.5

1 2 5 10 20 IF, LED INPUT CURRENT (mA)

50

Figure 1. LED Forward Voltage versus Forward Current

Figure 2. Output Current versus Input Current

I C , OUTPUT COLLECTOR CURRENT (NORMALIZED)

28 IC , COLLECTOR CURRENT (mA) 24 20 16 5 mA 12 8 4 0 0 1 2 3 4 5 6 7 8 2 mA 1 mA 9 10 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) IF = 10 mA

10 7 5 2 1 0.7 0.5 0.2 0.1 60 40 20 0 20 40 60 80 100 TA, AMBIENT TEMPERATURE (C) NORMALIZED TO TA = 25C

Figure 3. Collector Current versus CollectorEmitter Voltage


ICEO, COLLECTOREMITTER DARK CURRENT (NORMALIZED)

Figure 4. Output Current versus Ambient Temperature

100 NORMALIZED TO: VCE = 10 V TA = 25C t, TIME (s) 50 20 10 5 2 1 0.1 RL = 1000 RL = 100 VCC = 10 V

100

10 VCE = 30 V 1 10 V 0 20 40 60 80 100

{ {
tr tf

tf

tr

0.1 TA, AMBIENT TEMPERATURE (C)

0.2

0.5

1 2 5 10 20 IF, LED INPUT CURRENT (mA)

50

100

Figure 5. Dark Current versus Ambient Temperature

Figure 6. Rise and Fall Times (Typical Values)

4N25 4N26 4N27 4N28


100 70 50 t on, TURN ON TIME ( s) 20 10 7 5 RL = 1000 100 10 100 70 50 t off, TURN OFF TIME ( s) 20 RL = 1000 10 7 5 100 10 2 0.2 0.5 0.7 1 2 5 7 10 20 50 70 100 1 0.1 0.2 0.5 0.7 1 2 5 7 10 20 50 70 100

VCC = 10 V

VCC = 10 V

2 1 0.1

IF, LED INPUT CURRENT (mA)

IF, LED INPUT CURRENT (mA)

Figure 7. TurnOn Switching Times (Typical Values)


I , TYPICAL COLLECTOR CURRENT (mA) C 4 IF = 0 3 20 IB = 7 A 6 A C, CAPACITANCE (pF) 5 A 2 4 A 3 A 1 2 A 1 A 0 2 4 6 8 10 12 14 16 18 20 18 16 14 12 10 8 6 4 2

Figure 8. TurnOff Switching Times (Typical Values)

CLED CCB

f = 1 MHz

CEB CCE

0 0.05 0.1

0.2

0.5

10

20

50

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

V, VOLTAGE (VOLTS)

Figure 9. DC Current Gain (Detector Only)

Figure 10. Capacitances versus Voltage

TEST CIRCUIT
VCC = 10 V IF = 10 mA INPUT RL = 100 10% OUTPUT

WAVEFORMS
INPUT PULSE

OUTPUT PULSE 90% tr ton tf toff

Figure 11. Switching Time Test Circuit and Waveforms

4N25 4N26 4N27 4N28


PACKAGE DIMENSIONS

A
6 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. DIM A B C D E F G J K L M N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0 15 0.015 0.100 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 7.62 BSC 0 15 0.38 2.54

B
1 3

F 4 PL

T
SEATING PLANE

K G J 6 PL 0.13 (0.005) T A
M M

E 6 PL D 6 PL 0.13 (0.005)

M
M

T B

STYLE 1: PIN 1. 2. 3. 4. 5. 6.

ANODE CATHODE NC EMITTER COLLECTOR BASE

THRU HOLE

A
6 1 4

B
3

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.020 0.025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90

F 4 PL

H C

T G E 6 PL D 6 PL 0.13 (0.005)
M

J K 6 PL 0.13 (0.005) T A
M M

SEATING PLANE

T B

DIM A B C D E F G H J K L S

SURFACE MOUNT

*Consult factory for leadform option availability

4N25 4N26 4N27 4N28

A
6 4

B
1 3

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. DIM A B C D E F G J K L N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 10.16 10.80 0.38 1.02

F 4 PL

N C

T
SEATING PLANE

G D 6 PL

K 0.13 (0.005)
M

J T A
M

E 6 PL

*Consult factory for leadform option availability

0.4" LEAD SPACING

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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