214th ECS Meeting, Abstract #2311, The Electrochemical Society

Flexible low-voltage pentacene thinfilm transistor with high-k/low-k double polymer dielectric layer
Kwang H. Lee1, Kimoon Lee1, Min Suk Oh1, JeongM. Choi1, Sungjin Jang2 and Eugene Kim2, Seongil Im1
1

A, a threshold voltage of -2.5 V, and on/off ratio of 103, well operating under -5 V. Gate leakage current was less than 1nA.

Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea Department of Information and Display, Hongik University, Seoul 121-791, Korea Recently, low-voltage driven pentacene organic

thin-film transistors (OTFTs) have attracted much attention for practical applications such as portable devices in general. In order to realize these low voltage driven OTFTs, many research groups have focused on the study about the gate dielectric layers (for example, thin-polymers, self-assembled monolayer (SAM), high-k metal oxide, and thin polymer/thick high-k oxide double layer). However, low voltage OTFT adopting flexible plastic substrate is still in lack of report because such device needs high-k polymer dielectric although usual polymer has low-k dielectric properties. High-k polymer with smooth surface and good electric strength is quite difficult to find and fabricate. One way to satisfactorily meet the condition of low voltage operation on flexible substrate may be to adopt both low-k and high-k polymer dielectric layer in stack since the low-k polymer provide good electric strength and surface smoothness while the high-k one may make the low voltage TFT operation possible. In the present study of low voltage pentacene OTFT fabrication, we thus adopt 200 nmthick poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] as a high-k polymer (k=6 ~ 9) beneath a 30 nm-thin low-k poly-4-vinyphenol (PVP) dielectric, that interfaces pentacene channel. Our 230 nm-thick double (high-k/low-k) polymer showed a good dielectric strength of ~2 MV/cm, a high capacitance of 26 nF/cm2 with the k =~7. Based on this double polymer dielectric, our flexible pentacene TFT displayed a high saturation mobility of 1.22 cm2/V s and a maximum drain current of ~2