BTS (C) VI 10 006 L

B. Tech Degree VI Semester Examination, April 2010

EC 602 MICROWAVE TECHNIQUES AND DEVICES (2006 Scheme) Time: 3 Flours PART A (Answer ALL questions) I. (a) (8 x 5 = 40) Explain the properties, application and advantages of microwaves. S.T. for a TE l o mode, a freq of 8 GHZ will pass through a waveguide of dimension a = 1.5cm and b = lcm if a dielectric with E l = 4 is inserted inside the guide. Explain the Magic Tec Junction and give its application in detail. What are the High frequency limitations of conventional tubes. Discuss the difference between transferred electron devices and Avalanche trasmit devices. Explain the term dominant and degenerate mode in TE and TM waves. Explain IMPATT diode operation with suitable waveforms. Explain PIN diode switches and phase shifter. PART B (4 x 15 = 60) II. Explain the term cavity resonator. Derive the expression of fo and quality factor of cavity resonator in rectangular waveguide. OR Describe the construction and important features of 2 hole directional coupler. Obtain the reduced 5 matrix for the directional coupler. Explain the operation of Reblex Klystron with the help of applegate diagram. Derive its bunching parameter. OR What is Gunn effect. Explain it using RWH Theory. Explain the working of a Faraday rotation isolator with diagram. (I5) Maximum Marks: 100

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III.

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Explain the amplification process that takes place in TWT and give the significance of slow wave structure employed. OR Explain the operation and I-V characteristics of tunnel diode with the help of energy band diagram.

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VIII. IX.

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Explain the different methods of measuring microwave power. Explain the working of magnetron in detail. OR Derive Manley-Rowe power relations for parametric amplifier. Explain the methods of measuring VSWR.
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