INTRODUCTION TO MEMS EA C415

LITHOGRAPHY
Litho means Stone and Graphy means Writing Pattern Transfer process from mask to wafer Optical Light/X-Ray is used to project pattern on mask onto surface of Wafer Wafer surface is coated with photosensitive material (photoresist) Exposed area of photoresist gets softened/hardened depending on type of photoresist

LITHOGRAPHY
Feature Size (m) Optical (UV) Lithography 1

Direct Write to Wafer methods (DWW)

LASER ELECTRON BEAM

1-2 ~ 0.01 ~ 0.1 < 0.1

ION BEAM

X-Ray Lithography

OPTICAL LITHOGRAPHY
PHOTOLITHOGRAPHY light-stone-writing in Greek Process by which patterns on a semiconductor material can be defined using light. Means to create small-scale features of integrated circuits/MEMS.

PHOTOLITHOGRAPHY

SCHEMATIC OF PHOTOLITHOGRAPHY

PHOTOLITHOGRAPHY
TEN STEP PROCESS

1.Begin with Doped Silicon Substrate (Electric Properties) 2.Grow Oxide Layer (Insulation) 3.Apply Photoresist Polymer (Photosensitive Coat) 4.Place Mask over Chip (acts as elaborate template) 5.Expose Areas to be Removed to Light 6.Remove Mask 7.Wash Away Exposed Photoresist 8.Etch Oxide Layer 9.Deposit Next Layer 10.Remove Remaining Photoresist

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TYPES OF PHOTOLITHOGRAPHY

METHOD

1. Mask Size Wafer Size 2. Projection step and repeat

PHOTOLITHOGRAPHY
NEGATIVE RESIST
UV LIGHT

POSITIVE RESIST

MASK WITH OPAQUE PATTERN PHOTORESIST SiO2 SUBSTRATE

Exposed Region Becomes Insoluble

Exposed Region Becomes Soluble

PHOTOLITHOGRAPHY
NEGATIVE RESIST
ORGANIC (Xylene)

POSITIVE RESIST
ALKALINE (KOH)

DEVELOPER

AFTER DEVELOPMENT & POST BAKE ETCHING WITH HF/HF+NH4F

AFTER ETCHING

PHOTOLITHOGRAPHY

NEGATIVE RESIST
Strong H2SO4

POSITIVE RESIST

RESIST REMOVAL

#Ex. NEGATIVE PHOTORESIST: Kodak KTFR (Azide-sensitized

polyisotropine rubber)

POSITIVE PHOTORESIST: PMMA (Polymethyl metha-acrylate)

PHOTOLITHOGRAPHY
#Ex. NEGATIVE RESIST PHOTOLITHOGRAPHIC PROCESS A

[100]

TOP VIEW

A A

Cross Section A-A

[100]

[111] 54.7

A TOP VIEW Cross Section A-A

PHOTOLITHOGRAPHY Exposed [100] planes etch rapidly [111] etch slowly revealing itself at 54.7 angle Because [111] planes do etch an undercut is present Undercut is used to produce a suspended structure in substrate etching

PHOTOLITHOGRAPHY
SUSPENDED STRUCTURE BULK ETCHING

Convex Corners are rapidly undercut