TIP120-TIP127

TO-220 Darlington Transistor

TO-220
1.BASE 2.COLLECTOR 3.EMITTER

Features

TIP120,121,122

Darlington TRANSISTOR

(NPN)

TIP125,126,127 Darlington TRANSISTOR (PNP) Medium Power Complementary silicon transistors

Dimensions in inches and (millimeters)

MAXIMUM RATINGS (TA=25 unless otherwise noted)

Symbol Parameter TIP120 TIP125 VCBO VCEO VEBO IC PC RJA RJc TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Junction Temperature Storage Temperature 60 60 TIP121 TIP126 80 80 5 5 2 62.5 1.92 150 -55to+150 TIP122 TIP127 100 100 V V V A W /W /W Units

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 Collector-emitter breakdown voltage TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 Collector cut-off current TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 Collector cut-off current TIP120,TIP125 TIP121,TIP126 TIP122,TIP127 Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Output Capacitance TIP125,TIP126,TIP127 TIP120,TIP121,TIP122 Collector-base breakdown voltage Symbol V(BR)CBO Test conditions MIN 60 80 100 60 80 100 0.2 MAX UNIT V

IC= 1mA,IE=0

VCEO(SUS)

IC= 30mA,IB=0 VCB= 60 V, IE=0 VCB= 80 V, IE=0 VCB= 100V, IE=0 VCE=30 V, IB=0 VCE=40 V, IB=0 VCE=50 V, IB=0 VEB=5 V, IC=0 VCE= 3V, IC=0.5A VCE= 3V, IC=3 A IC=3A,IB=12mA IC=5 A,IB=20mA VCE=3V, IC=3 A VCB=10V, IE=0,f=0.1MHz

ICBO

mA

ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE Cob

0.5 2 1000 1000 2 4 2.5 300 200

mA mA

V V pF

TIP120-TIP127
TO-220 Darlington Transistor

Typical Characteristics