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TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor

October 2008

TIP120/TIP121/TIP122
NPN Epitaxial Darlington Transistor
Medium Power Linear Switching Applications Complementary to TIP125/126/127

Equivalent Circuit C

TO-220 2.Collector 3.Emitter


R1 R2 E

1.Base

R1 @ 8k W R2 @ 0.12k W

Absolute Maximum Ratings*


Symbol VCBO Collector-Base Voltage

T a = 25C unless otherwise noted

Parameter : TIP120 : TIP121 : TIP122

Ratings 60 80 100 60 80 100 5 5 8 120 2 65 150 - 65 ~ 150

Units V V V V V V V A A mA W W C C

VCEO

Collector-Emitter Voltage : TIP120 : TIP121 : TIP122 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature

VEBO IC ICP IB PC TJ TSTG

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0 1

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TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor

Electrical Characteristics* Ta=25C unless otherwise noted


Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP120 : TIP121 : TIP122 Collector Cut-off Current : TIP120 : TIP121 : TIP122 Collector Cut-off Current : TIP120 : TIP121 : TIP122 Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter On Voltage Output Capacitance VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 VCE = 3V,IC = 0.5A VCE = 3V, IC = 3A IC = 3A, IB = 12mA IC = 5A, IB = 20mA VCE = 3V, IC = 3A VCB = 10V, IE = 0, f = 0.1MHz 1000 1000 2.0 4.0 2.5 200 V V V pF 0.2 0.2 0.2 2 mA mA mA mA VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 0.5 0.5 0.5 mA mA mA Test Condition IC = 100mA, IB = 0 Min. 60 80 100 Typ. Max. Units V V V

ICEO

ICBO

IEBO hFE VCE(sat) VBE(on) Cob

* Pulse Test: Pulse Width300ms, Duty Cycle2%

2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0 2

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TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor

Typical characteristics
10000

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

VCE = 4V

3.5

IC = 250IB

3.0

hFE, DC CURRENT GAIN

2.5

1000

2.0

1.5

VBE(sat)

1.0

VCE (sat)

100 0.1

10

0.5 0.1

10

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

1000 f=0.1MHz

10

s 0m 10 ms 0 50

Cob[pF] Cib[pF], CAPACITANCE

s 1m

IC[A], COLLECTOR CURRENT

s 5m

DC

100

Cob Cib

0.1

TIP120 TIP121 TIP122

10 0.1

10

100

0.01

VCB[V], COLLECTOR-BASE VOLTAGE VEB[V], EMITTER-BASE VOLTAGE

10

100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Output and Input Capacitance vs. Reverse Voltage

Figure 4. Safe Operating Area

80 70

PC[W], POWER DISSIPATION

60 50 40 30 20 10 0

25

50
o

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0 3

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TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor

Mechanical Dimensions

TO220

2007 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. 1.0.0 4

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TIP120/TIP121/TIP122 NPN Epitaxial Darlington Transistor

TRADEMARKS
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

2008 Fairchild Semiconductor Corporation TIP120/TIP121/TIP122 Rev. A1 5

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