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(1.

E CC:=7< tL,~

UI f

A d va,'Y\(~ l'1;

C~WClVe.,

C . t:~~ i-n

ee-r1'Y\.j,

N. B.:

(1) (2) (3) (4)

Question NO.1 is compulsory. Attempt any four questions from remaining six questions. Use smith chart if necessary. Figures to right indicate full marks.

with reference to load pull contours, how it is measured? [5] c. Define signal to noise ratio and noise figure with help of noisy microwave aetwork. Explain test set up to measure signal to noise ratio. [5] d. Explain with help of neat diagram, single balance mixer. [5] Q2 Design an amplifier for maximum gain at 4 GHz using single stub matching section. Calculate and plot the input return loss and gain from 3 to 5 GHz. Plot stability circles on smith chart. The Ga A s FET h as t h e f o 11 . S arameters, Z 0=500 r2Q' owmg " l"J

b. Explain Large signal characterization

f
-----

GHz

511
----

521
2.86~99 2.60~76 2.39~S4

512
O.03~S6 O.03~S7 O.O3~62

522
O.76~-41 O.73~-S4 O.72~-68
-~~--------_.-

3
----~

-_.~-

O.80~-89

4
----_._"

O.72~-116 O.66~-142

----~-~~.~-

-"

..~"_..

_-

Q3 Design a dielectric resonator oscillator at 2.4 GHz using series feedback circuit of following
figure, with bipolar transistor having following S parameters ( Zo=500).

Determine the coupling coefficient for the dielectric resonator, and a micros trip matching network f~r the termination network. Plot

Ir I
out

V/

s L1 f /f 0

,for small variation in frequency

RLC d.bout design value, assuming unloaded resonator Q of :1000. [20]

, \ 1'2-' f2~

,,

,:>"

BI.(~~TC)
~dvon('e.

'1111-

Mfcr~~a'YC"

n9,neerin3

Q4 Design a class A power amplifier at 900 MHz using MRF858S NPN transistor with output power of 3 W. Design input and output impedance matching sections for the amplifier, find the reauired input power, and compute the power added efficiency. Use the given S parameters to compute source and load reflection coefficients for conjugate matching. The small signal S parameters of above transistor is given as below. .

511 =0.940 <):164,512=0.031

<): 59,521 = 1.222 <): 43,522=

0.570 <):-165

For an emitter collector voltage V cE=24~ and collector current of Ic=0.5A, the output power at the 1dB compression point is 3.6W, and power gain is 12dB. The source and load impedances are Z;n=1.2+ j3.Sfl,:,Zout=9+ j14.Sfl . [20] Q5' a. Define conversion loss of SSB mixer, also explain diode loss, mismatch loss, harmonic loss. [10] b. Find signal flow graph of microwave amplifier shown in figure. [10]

Zs Two port net\'vork

[5]

rout

rL
[10]

Q 6 a. Describe and classify in detail generator tunning networks [10] b. Explain in detail single ended diode mixer. What are mixer design considerations? Q7.Write short note on: a. Characteristics of power amplifier [7] b. Oscillator vis amplifier design [7] c. Broad band microwave amplifier using balance amplifier design technique [6]

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