In any of the problems if you need a temperature and it is not given, assume T = 300K, for PN junction problems, assume

Wn >> Lp 2) A N-type semiconductor has a resistivity of 1 ohm-cm. Assume Un = 3000 cm^2/V-s and Up = 1000 cm^2/V-s, ni = 10^12 cm^3, Eg = 1.0 eV, and T= 300k, determine a) the location of the fermi level with respect to Ec; b) the probability of occupancy of a state located at 0.1eV above the middle of the band gap. (20pts)

3) At T = 300K, the intrinsic carrier density of a GaAs sample is 1.8 x 10^6 cm^3, Un = 8500 and Up = 400 cm^2/V-s. An electric field applied to a bar of extrinsic GaAs causes equal electron and hole current densities. Determine a) the equilibrium electron and hole densities ,b) The net doping density. (20pts)

4) At 300K, a silicon P+N diode has the following parameters. The N-side is doped with phosphorus to 10^17 cm^3, The P-side is dopped with the same amount of phosphorus(10^17 cm^3) as well as 10^18 cm^3 of boron. The diode has a cross-sectional area of A = 0.1 mm^2 The length of the P and N region is 1 mm each. The reverse saturation current of the diode is 1 uA. Taking into account the voltage drop on the P and N region, what forward bias (voltage) is needed to have a diode current of 10 mA. (20pts) 5) A PN+ silicon diode has Nd = 10^18 cm-3 and Na = 10^16 cm-3, tp = tn = 1us, A = 1.2 x 10^-4 cm^2, T = 300k and the relative permitivity e = 16 (25pts) Determine a) the built-in voltage b) the current when the applied voltage in the forward direction is 0.7V c) the current when the applied voltage in the reverse direction is 0.05V d) the excess minority carrier concentration at x' = 1um (x' = x- xn) into N under a forward bias of 0.2V e) the width, xn of the depletion layer extended onto the N region when a reverse bais of 5V is applied 6) Show mathematically that for two diodes having identical doping densities, identical minority carrier lifetimes and identical minority carrier diffusion constants, the diode current depends on the band gap of the semiconductor(as shown in the following figure. (10pts) 10| | | | 8| | | | 6| | | | 4| | | /| 2|____/_|_____ | | | | | | | /| _/_|____ | | | | | | | /| _/_|______

0 0.2 0.4 0.6

0.8

1.0