23.X.

1986
IXFLUESCE OF T H E COSSTAST ELECTnIC FIELD i
OX TIIE IhTERXCTlOS P1iOCESSES I31:TXEES SiLICOS
ASD SFc DISLOCATIOS PLASMA IS RE'-DfSCfIARGE
IVevzurov P. I . , SLouetsl;ll D ,I . , Suiimin -4. D., Vincigradov C. h.,
Sh~'lit:hmiifio~h'. F . i

c ~ c: o ~ i + ( d npufcnfi:~l
1 h i ~ i f l \ i ~ of~ ~LIIC t H [ I P ~ ~ L ' ( ! t o 11i0 Si sa111plf ill SF6 pi,l.cilta ttii I:.
rate of thc intc.raclioa a.iLli thc transiorma1io:l prodttct> in plasl,la has bctbil ~ L i i i f i i * Ji,,
a flat-?aral!cl reactor tci,o~iltcr\villi the analysis of tho results of tlic ~ ~ c a s u r p ~ ~oft c1:.n i
rate of silicon ntilization as we11 as s t r ~ 8 l l l sof fluorine a t o m and charged, pr:icfLs.* (17.

tile Si surface, partly n ~ ~ s l i cwit11 d SiOz and A1 films. It has been found lit;~t npplji!~:
the constant elcctric potential to the sample leads to t..e effect of increiisi~gthe pit+!,
bility of interaction-of plasma particles with Si, that is esplaincd by tho influcnc* r ,
' the constant efcctric field on the activity o i n semiconductor as a catalyst tir the d 1 4 . . j -
to absorb.