4.

BJT

- BASIC BJT AMPLIFIER TOPOLOGIES

1.
BJT (amplifier, Amp.)
.
report 25% .
report : 4. SPICE
( , )
report : 4.
, ( report )
: Microelectronic Circuits Sedra/Smith 4th Edition 4 6,7,8
example 7,9,10,11,12, exercise 31,32,33,34
2.

BJT amplifier .
a. Common-Emitter (CE) Amplifier
b. Common-Base (CB) Amplifier
c. Common-Collector(CC) Amplifier
biasing circuit .

1) Current bias circuit : single-supply bias topology

<Fig. 1> single power supply
. voltage divider RB1, RB2
Tr. base Thevenin
equivalent circuit .

+10V

RB2
8.2k

RB
B

T2
E2

RB1
10k

RB1RB2
RRB1B2+ RB2
VBB =
VCC
RB1 + RB2
RB =

VBB

T2

E2

RE
1k

VBB VBE
RE + RB/(+ 1)

IE =

RE
1k

<Fig. 1>

.
RE

VBB VBE

RBB
+ 1

2) Common-Emitter (CE) Amplifier

CE Amp. T1 base collector input, output
collector load resistance . emitter
capacitance, CE AC ground
. two-port network emitter input
output signal ground
common-emitter grounded-emitter amplifier .
<Fig. 2> CE Amp. .
+ 10V

R in

R out

RC
1k
Z

A
vi

R1
1k

RS
10k X
S
R2
10

C
T1

E1
-

Y
+

CE
100uF

<Fig. 2>

vo
RL
1k

CC
100uF

gm =

IC IB
=
VT
VT

r =

gm

VT thermal voltage 25mV bias current source,

IB <Fig. 1> . input node, A node X
gain voltage divider .
vs =

R2
vi
R1 + R2

vx =

Rin r

r
vs
RS + r

node, X input small signal analysis vo

.

vo = gm( RC//RL )vx

vx voltage gain .
AV = vo / vi = gm( RC//RL)

r
R2
RS + r R1 + R2

input, output resistance .

Rin r
Rout = RC // ro RC

(Rout ro ro .)
CE Amp. Rin (
node X ) high transconductance(gm), high
output resistance, high voltage and current gain
high-frequency .
CE Amp. <Fig. 3> emitter ground
amplifier
.
C
T1
E1
-

<Fig. 3>

Y
+

CE
100uF

Re

 small signal analysis

. node x
re =

ie =

gm

vo = ie(RC//R L ) =

vo / vx =

RC
(/gm) + Re

vx
re + Re

RC
re + Re

vx

gm RC
gmRC
=
+ gm RE
1 + RE/re

va/vx voltage gain, AV

.

AV = vo / vi =

gmRC
R2
r + (1 +)Re
1 + RE/re R1 + R2 RS + r + (1 +)Re

input resistance .
Rin = r + (1 +) Re r(1 + gmRe)

output resistance .
input ground output test voltage, Vt
. RC .
vt = (it gmv )ro + ve

v
)
r
v
vt = (it gmv )ro + Re(it + )
r
ve = Re(it +

ib =

Re
it
r + RS + R1//R2

v = ibr =

rRe
it
r+ RS+ R1//R2

.
vt = (it gmv )ro + Re(it +

v
Re
) = (ro + Re)it + ( gmro) v
r
r

vt = (ro + Re)it +

r Re
Re
( gmro )it
r + RS + R1//R2
r

Rout = vt / it = ro + Re +

rRe
Re
( gmro )
r + RS + R1//R2
r

ro, r Re
ro >> Re

1 >> Re / ro

Re, Re/ro .
.
Rout = ro +

output resistance

rRe
gmRe

gmro = ro 1 +

r + RS + R1//R2
1 + ( RS + R1//R2)/r

RC output resistance, Rout

.

Rout = RC // ro 1 +

gmRe

RC
1 + ( RS + R1//R2)/r

voltage gain
.
input
nonlinear distortion high-frequency
.
3) Common-Base (CB) Amplifier

CB Amp. T1 base, collector, emitter ground, output, input

collector load resistance . CE Amp.
two-port network base input/output port signal ground
common-base
grounded-base amplifier .
(gm CE Amp . )
re =

VT
IE

+ 10V

Rout

RC
1k

Z vo
RL
1k

C + CC T1 100uF
E1
-

RS
10 S
R2
10

+
CE
100uF

R1
1k A
vi

vs =

R2//(RS + re)
vi
R1 + ( R2//(RS + re))

vy =

re
vs
RS + re

vo = gm(RC//RL)ve = gm(RC//RL)vy
Rin re
Rout RC

Rin

<Fig. 4>
AV =

vo
re
R2//(RS + re)
= gm( RC//RL)
vi
RS + re R1 + ( R2//(RS + re))

CB Amp. CE phase 180

. CE Amp. bandwidth
.
CB Amp .

a. AI(current gain) 1
. BJT emitter current collector current
1 . ( crrent buffer )
b. node E1 low input impedance level(re )
output RC open high
impedance level .
4) Common-Collector Amplifier or emitter follower

CC Amp. Amp. base, collector,

emitter input, output, ground two-port
network . collector capacitance, Cc
AC ground . CC Amp. two-port network
collector input output signal ground
common-collector grounded-collector amplifier .
6

+ 10V

RC
1k

R in

vs =

R2
vi
R1 + R2

vx =

r + (1 +)RL
vs
RS + (r + (1 + ) RL)

vo =

(1 + )RL
vx
r + (1 + )RL

Z
A

R1
1k

vi

RS
10k

S
R2
10

C
X

T1

CC
100uF

E1
-

Y
+

CE
100uF

vo
RL
1k

R out

<Fig. 5>
AV =

(1 +)RL
r + (1 +) RL
R2
vo
=
vi r + (1 +)RL RS + (r + (1 +) RL) R1 + R2

voltage gain
.
r << (1 +)RL

RS << r + (1 + )RL
AV

R2
R1 + R2

input, output resistance

.
Rin = r + (1 + )RL = r(1 + gm)RL
Rout = re +

RS + (R1 // R2)
1 +

node A S voltage divider voltage gain, AV

1 . CC Amp.
buffer base input output
emitter (follow) emitter follower
.

3.
BJT

: Q2N3904*2

Resistor
Capacitor

4.

: 10 * 2, 100 * 2, 1k * 5, 8.2k * 1, 10k * 3

: 100F * 2

V+=+10V

1. Flexible Bias Design : Bias-Current Measurement

RC
1k

a. <Fig. 7> port X

ground . 10V
B, E2, E1, C .
T2 emitter current, IE2 T1
collector current, IC1 .
(, =160 )

C
T1

+
CC
100uF

E1
Y
+
CE
100uF

RB2
8.2k
B

T2
E2

RB1
10k

RE
1k

V-=-10V

<Fig. 7>
E2

E1

IE2

IC1

SPICE

b. V+ 15V node C
. T1
collector current, IC1 .

IC1

SPICE

c. V+ VC V . V-, B, E2, E1 . T1
collector current, IC1 .
V-

E2

SPICE

E1

Ie2

2. Common-Emitter (CE) Amplifier

2.1 Basic CE Amplifier
a. CE Amp. voltage gain : <Fig. 8> V+ = V- = 10V
. input 1KHz, 1V sine wave
oscilloscope node A, S, X, Z peak-to-peak
voltage .
+10V

RC
1k
Z
A
vi

R1
1k

RS
10k

S
R2
10

C
T1

vo
RL
1k

CC
100uF
Y

E1
-

+
CE
100uF

RB2
8.2k
B

T2
E2

RB1
10k

RE
1k

<Fig. 8>

-10V

Av

Av

SPICE

b. Rs 20k a .
A

SPICE

c. a b gain Ri , DC bias
.
( : Ava Avb Ri .)

2.2 CE Amplifier with Emitter Resistor

- Voltage gain
C
T1

a. <Fig. 9> <Fig. 8> node Y

ground Re = 100 V+ =
V- = 10V, input 1KHz 1V sine wave
. (, Rs=10k )

Y
E1
+
CE
100uF

Re
100

<Fig. 9>
A

Av

SPICE

b. Ri DC bias .
2.1 Ri Av ?
3.

Common-Base (CB) Amplifier

a. Voltage gain : <Fig. 10>
input
triangular wave 1KHz 1V
. node A, S, E, Z
peak-to-peak gain vz/vs
vz/ve .

+10V

RC
1k
C
X

Z vo
RL
1k

CC
100uF

T1

E1
-

+
CE
100uF

RB2
8.2k
B

T2
E2

RB1
10k

RS
10 S
R2
10

RE
1k

-10V

<Fig. 10>
A

SPICE

10

vz/vs

vz/ve

R1
1k A
vi

b. a R2 100 .
A

vz/vs

vz/ve

SPICE

c. a b gain Ri , DC bias
.( : Ava Avb Ri
.)
d.

RL 10k . ( R2 100 )
node Z, S peak voltage input .
non-linear distortion output-voltage clipping
peak voltage .
input R1 1k
shunt(parallel ) .
voltage gain .

Z
positive

S
negative

SPICE

11

postive

negative

4. Common-Collector (CC) Amplifier

4.1 CC Amplifier with Light Load
a.

<Fig. 11> V+ = V- = 10V, node A input

1KHz 1V peak sine wave . node S, X, Y peak-to-peak
voltage .

+10V

RC
1k
Z
A

R1
1k

vi

RS
10k

C
X

CC
100uF

T1

R2
10

E1
-

Y
+

CE
100uF

RB2
8.2k
B

T2
E2

RB1
10k

vo
RL
1k

RE
1k

<Fig. 11>
-10V

Av

Ro

SPICE

b. Output voltage :
R2 = 10 output clipping input
amplitude . node Y, S peak voltage input
.
non-linear distortion
output-voltage clipping peak voltage
.
X
positive

Y
negative

SPICE

12

postive

negative

4.2 CC Amplifier With a Small Load Resistance

R2 <Fig.11> RL 50
1KHz 1V peak sine wave node A . node S, X, Y .
Voltage gain , 4.1 output resistance
.
S

Rout

Av

SPICE

5. SPICE Simulation
+10V

RC
1k
Z
A
vi

R1
1k

RS
10k
S R2
10

C
X

E1
+ Y
CE
100uF
B

vo
RL
1k

CC
100uF

T1

RB2
8.2k

R1
1k

RS
10
S

R2
10

A
vi

T2
E2

RB1
10k

RE
1k

-10V

<Fig. 12>
1. Flexible Bias Design : Bias-Current Measurement
*Power supplies
Vcc 1 0 +10V
Vee 2 0 -10V
*amplifier
Q1 3 0 6 Q2N3904
Q2 6 8 9 Q2N3904
Rc 1 3 1k
Re 9 2 1k
Rb1 8 2 10k
Rb2 8 0 8.2k
*transistor model statement for the Q2N3904
.model Q2N3904 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259
+ Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1
+ Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75
+ Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)
.op
.print DC v(8) v(9) v(6) v(3)
.end

13

2.

Common-Emitter (CE) Amplifier

2.1 Basic CE Amplifier

*Power supplies
Vcc 1 0 +10V
Vee 2 0 -10V
*amplifier
Q1 3 5 6 Q2N3904
Q2 6 8 9 Q2N3904
Rc 1 3 1k
Cc 3 4 100uF
Re 9 2 1k
Ce 0 6 100uF
Rb1 8 2 10k
Rb2 8 0 8.2k
Rl 4 0 1k
Rs 10 5 10k
R1 11 10 1k
R2 10 0 10
Vi 11 0 SIN(0 1 1kHz)
*transistor model statement for the Q2N3904
.model Q2N3904 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259
+ Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1
+ Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75
+ Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)
.op
.tran 50n 2ms
.print DC v(11) v(10) v(5) v(4)
.end
2.2 CE Amplifier with Emitter Resistor Voltage gain
*Power supplies
Vcc 1 0 +10V
Vee 2 0 -10V
*amplifier
Q1 3 5 6 Q2N3904
Q2 6 8 9 Q2N3904
Rc 1 3 1k
Cc 3 4 100uF
Re 9 2 1k
Ce 7 6 100uF
Ree 7 0 100
Rb1 8 2 10k
Rb2 8 0 8.2k
Rl 4 0 1k
Rs 10 5 10k
R1 11 10 1k
R2 10 0 10
Vi 11 0 SIN(0 1 1kHz)
*transistor model statement for the Q2N3904
.model Q2N3904 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259
+ Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1
+ Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75

14

+ Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)

.op
.tran 100n 2ms
.print DC v(11) v(10) v(5) v(4)
.end
3. Common-Base (CB) Amplifier
*Power supplies
Vcc 1 0 +10V
Vee 2 0 -10V
*amplifier
Q1 3 0 6 Q2N3904
Q2 6 8 9 Q2N3904
Rc 1 3 1k
Cc 3 4 100uF
Re 9 2 1k
Ce 7 6 100uF
Rb1 8 2 10k
Rb2 8 0 8.2k
Rl 4 0 1k
Rs 10 7 10
R1 11 10 1k
R2 10 0 10
Vi 11 0 SIN(0 1 1kHz)
*transistor model statement for the Q2N3904
.model Q2N3904 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259
+ Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1
+ Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75
+ Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)
.op
.tran 100n 2ms
.print DC v(11) v(10) v(6) v(4)
.end
4.

Common-Collector (CC) Amplifier

4.1 CC Amplifier with Light Load

*Power supplies
Vcc 1 0 +10V
Vee 2 0 -10V
*amplifier
Q1 3 5 6 Q2N3904
Q2 6 8 9 Q2N3904
Rc 1 3 1k
Cc 3 0 100uF
Re 9 2 1k
Ce 7 6 100uF
Rb1 8 2 10k
Rb2 8 0 8.2k
Rl 7 0 1k
Rs 10 5 10k
R1 11 10 1k
R2 10 0 10
Vi 11 0 SIN(0 1 1kHz)

15

*transistor model statement for the Q2N3904

.model Q2N3904 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259
+ Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1
+ Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75
+ Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)
.op
.tran 100n 2ms
.print v(10) v(5) v(7)
.end
4.2 CC Amplifier with a small load resistance
*Power supplies
Vcc 1 0 +10V
Vee 2 0 -10V
*amplifier
Q1 3 5 6 Q2N3904
Q2 6 8 9 Q2N3904
Rc 1 3 1k
Cc 3 0 100uF
Re 9 2 1k
Ce 7 6 100uF
Rb1 8 2 10k
Rb2 8 0 8.2k
Rl 7 0 50
Rs 10 5 10k
R1 11 10 1k
Vi 11 0 SIN(0 1 1kHz)
*transistor model statement for the Q2N3904
.model Q2N3904 NPN(Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259
+ Ise=6.734f Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1
+ Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75
+ Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10)
.op
.tran 100n 2ms
.print v(10) v(5) v(7)
.end

kukinine@postech.ac.kr , position@postech.ac.kr

16