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THIT K BO V CHNG ST THEO IEC 62305 Chng 1: Nguyn tc chung v Bo v Chng st
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CHNG 1:
NGUYN TC CHUNG V BO V CHNG ST
m hnh ha hin tng vt l ca st v nh lng ha ri ro tn tht do st em n cho cc cng trnh,
ngi ta phi nh ngha cc khi nim: ngun thit hi (sources of damage), loi thit hi (types of damage)
v loi tn tht (types of loss) ca st.
M hnh dng in ca tia st gm nhiu xung gi l c st. Cc c st c phn loi thnh c st ngn v
c st di, c st m v c st dng. Tham s dng in c st ngn khc nhau i vi c st u tin v c
st k tip. Cc tham s khc nghit nht ca cc thnh phn trong mt tia st, ty theo xc sut hiu qu
chng st, to thnh mt b tham s gi l Mc chng st (LPL).
Cp chng st (LPC) l mt b quy tc c thit lp thit k mt H thng Chng st (LPS) theo yu cu,
tng ng vi mt Mc chng st (LPL). Theo tiu chun hin hnh, c 4 LPC tng ng vi 4 LPL (I, II, III,
IV). LPC cng c dng tnh ton cc gi tr th nghim cho vic ch to nhng thnh phn ca mt h
thng lp t chng st.

I. KHI NIM V ST V TN THT THIT HI DO ST:

1. Khi nim v st:
St l hin tng phng in kh quyn gia cc m my tch in vi nhau hoc vi t. Nhng tia
st hng xung t gy nhiu thit hi v ti sn, sinh mng, v nhng h thng in in t.
Sir Benjamin Franklin (1707 1790) c xem nh l cha ca l thuyt chng st hin i. Th
nghim ni ting (v nguy him) vi cnh diu ca ng ln u tin chng minh rng st l hin
tng phng in ca in tch tnh in hnh thnh trong nhng m my bo.

a- S hnh thnh nhng m my bo:
m my bo cn gi l m my v tch
(cumulonimbus cloud) c hnh thnh do 2 c ch:
bo nhit (heat storm) v bo ph-rng (frontal storm).
Bo nhit, cn gi l bo i lu (convective
storm)thng xy ra vng nhit i v min ni.Vo
mt ngy nng, khng kh m ct ln t mt t m v
c thay th bng mt lung khng kh mt hn
pha di.
Hnh 1- Bo nhit

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Qu trnh i lu lm mt dn khi kh bc ln v hnh thnh m my, u tin l nhng ht nc,
v nhng cao hn l nhng tinh th tuyt. Theo cch ny mt hay nhiu t my (cloud cell)
tch v c hnh thnh, vi nh ca chng c th ln n cao 12km.
Bo ph-rng, thng xy ra nhng min kh hu n
ha, hnh thnh my bo theo cch khc. Mt khi kh
lnh di chuyn nhanh, va chm vo pha trc vi mt
khi kh nng m, lm cho khi kh nng trn ln
cao mt trc ca khi kh lnh.
Cng nh trn, nhng m my tch v c hnh
thnh, nhng trong trng hp ny, phm vi c th
rng n vi chc km. Trong bo ph-rng, nhng t
my vi s lng nhiu hn, c chiu cao cao hn, c
th t 7,5 n 18km.
Hnh 2 - Bo ph-rng

b- S hnh thnh in tch trong m my bo:
Trong mt m my bo, cn gi l m my st, nhng
tinh th tuyt mang in tch dng, trong khi nhng ht
nc mang in tch m. S phn b nhng ht ny
thng lm cho mt lng in tch m tch t bn di
m my. Hiu ng cm ng tnh in lm cho xut hin
in tch dng trn mt t. Mt t c th khong cch
rt gn (1km) so vi y m my. Khi in tch tch t
cng vi hiu in th gia y m my v mt t ln
n c c th nh thng in tr ca khng kh, s phng
in st gia m my v mt t xy ra.
Hnh 3- in tch tch t trong m my st

c- Hiu ng phng in st:
Ban u l s hnh thnh mt tia tin o (leader) hng xung
tng bc (chng 50m) t m my n mt t. Khi tia tin o
xung gn mt t, in tch m rt ln ca n s to cm ng
mt in tch dng rt ln trn mt t i din bn di, c
bit l trn nhng vt th nh cao trn mt t, do hiu ng mi
nhn.
Hnh 4- Tia tin o hng xung

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Khi hai in tch khc du ny ht nhau, mt in tch dng ln phng ln t mt t kt hp vi
tia tin o tng bc ang hng xung, hnh thnh mt stri-m (lung) in tch dng hng
ln.

Hnh 5- Lung (stri-m) hng ln Hnh 6- C st hi (return stroke)

Tia tin o hng xung v lung hng ln gp nhau to nn mt ng dn in hon ton, theo
mt dng st rt ln chy trong trung ha hiu in th gia m my v mt t. Dng phng
in sau cng ny gi l c st hi (return stroke), to nn tia st sng la chng ta nhn thy.

Tht ra nhng tia st t m my n m my th nhiu hn (90%) nhng tia st t m my xung
mt t (10%). Tuy nhin ch c nhng tia st nh xung mt t gy thit hi cho con ngi v
nhng cng trnh.

2. Thit hi do st:
bo v chng st cho cc cng trnh trn mt t, chng ta ch kho st cc tia st nh xung t.
St c th gy ra:
- Thit hi cho cng trnh, c dn v vt cha bn trong n;
- H hng thit b, vt liu thuc cc h thng bn trong: nhng h thng in v in t (gm
c vin thng, iu khin,);
Phm vi cc thit hi v h hng ny c th m rng n cc cng trnh lin k trong vng cn xung
quanh ca cng trnh, v ngay c trong mi trng a phng.


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a. Ngun thit hi:
d thit lp bi ton thng k nh gi ri ro (xc sut ca thit hi) v tn tht (hu qu ca thit
hi), ngi ta phn chia thit hi do st thnh 4 ngun (source):
- S1: nhng tia st nh vo cng trnh;
- S2: nhng tia st nh gn cng trnh (vo vng t xung quanh cng trnh);
- S3: nhng tia st nh vo cc ng dy kt ni vi cng trnh: nhng ng dy in v dy vin
thng (gm dy truyn hnh cp, dy thng tin: in thoi, internet,.);
- S4: nhng tia st nh gn nhng ng dy kt ni vi cng trnh (vng t cnh bn ng dy).

b. Nhng hiu ng thit hi:
Nhng hiu ng thit hi do st l nhiu, nhng c th k ra i vi nhng loi cng trnh tiu biu
nh trong Bng 1.

c. Loi thit hi:
d nh lng xc sut, ngi ta chia tt c cc thit hi (damage) do st thnh 3 loi:
D1: tn thng sinh mng (ngi hay vt nui)do in git;
D2: thit hi vt cht (chy, n, ph hy c hc, trn ha cht,r r phng x,.) do nhng hiu ng
ca st, gm c phng in;
D3: h hng h thng bn trong do xung in t ca st (LEMP).
Mi quan h gia ngun v loi thit hi c th m t nh trong Bng 2.


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Bng 1- Nhng hiu ng ca st ln mt cng trnh tiu biu
(Theo Table 1, I EC 62305-1:2010)
Phn loi cng trnh theo chc nng
v vt cha
Cc hiu ng thit hi do st
- Nh nh thng h thng lp t in, chy v thit hi vt cht.
Thit hi thng gii hn nhng cu trc l b st nh
trng hoc trn ng i ca dng st.
H hng nhng h thng lp t in v in t (v d my thu
TV, my tnh, modem, in thoi,v.v)
- Nh nng nghip Ri ro ch yu l chy, in p bc nguy him, v thit hi
vt cht.
Ri ro th cp do mt in, nguy him mng sng cho vt nui
do h hng iu khin in t ca nhng h thng thng gi v
cung cp thc n,v.v...
- Nh ht
- Khch sn
- Trng hc
- Ca hng bch ha
- Sn th thao
Thit hi h thng lp t in (v d chiu sng) c th gy
no lon.
H hng h thng bo chy lm tr nhng phng tin cha
chy.
- Ngn hng
- Cng ty bo him
- Cng ty thng mi,v.v
Nh trn, thm nhng vn do mt thng tin, hng my tnh
v mt d liu.
- Bnh vin
- Nh tr, Nh dng lo, Nh
nui ngi khuyt tt,
- Nh t
Nh trn, thm nhng vn v nhng ngi ang c chm
sc c bit v kh khn gii cu nhng ngi b hn ch vn
ng.
- Nh cng nghip Nhng hiu ng cng thm ph thuc vo vt cha ca x
nghip, thit hi t nh cho n khng th chp nhn c v
tn tht sn xut.
- Vin bo tng v cng trng
kho c
- Nh th
Thit hi di sn vn ha khng th thay th c.
- Cng trnh vin thng
- Nh my in
Thit hi dch v cng cng khng th chp nhn c.
- Xng pho bng
- Cng trnh qun kh
Hu qu chy n cho nh my v vng ln cn.
- Nh my ha
- Nh my lc du
- Nh my ht nhn
- Phng th nghim v nh my
sinh ha
Chy v vn hnh sai vi nhng hu qu nguy him cho a
phng v mi trng chung.


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Bng 2- Mi quan h gia ngun st v thit hi do st
(Theo 5.1.2, I EC 62305-1:2010)
im nh
trng
Ngun
thit hi
Loi
thit hi
Gii thch

Cng trnh

S1
D1

D2

D3
in git do in p tip xc v in p bc.

Chy n, ph hy c hc do hiu ng c, nhit
ca dng st, hay do phng in ca in p st.

H hng h thng bn trong do xung in t ca
st (LEMP).

Gn cng trnh

S2

D3

H hng h thng bn trong do LEMP.

ng dy kt ni
vo cng trnh

S3
D1

D2

D3
in git do in p tip xc.

Chy n, do hiu ng nhit ca dng st, hay do
phng in ca in p st.

H hng h thng bn trong do qu p bi
LEMP.

Gn ng dy kt
ni vo cng trnh

S4

D3

H hng h thng bn trong do qu p cm ng
bi LEMP.

Tia st S1 hay S3 c th gy ra cc thit hi D1, D2 v D3. Trong khi tia st S2 hay S4 ch gy ra
thit hi D3.

2. Tn tht do st:
Mt bin c gy thit hi ca st c th to ra t hoc nhiu tn tht (loss). nh gi tn tht mt
cch nh lng, ngi ta phn loi thnh 4 loi tn tht:
L1: tn tht nhn mng (gm c thng tn vnh vin);
L2: tn tht dch v cng cng;
L3: tn tht di sn vn ha (khng th thay th c);
L4: tn tht gi tr kinh t (cng trnh, vt cha, hot ng hu ch).
L1, L2, L3 c gi l nhng tn tht gi tr x hi; L4 c gi l tn tht thun kinh t.
Mi quan h gia cc loi thit hi v cc loi tn tht do st c m t theo bng sau:

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Bng 3- Nhng tn tht c th xy ra do cc loi thit hi do st
(Theo Table 2, I EC 62305-1:2010)
Ngun
thit
hi
Loi
thit
hi
Loi
tn
tht
Gii thch

S1
D1 L1 Tn tht nhn mng do in git (gy nn bi in p tip xc hay in p bc).
L4
a
Tn tht gi tr kinh t do vt nui b in git(gy nn bi in p tip xc hay
in p bc).

D2
L1 Tn tht nhn mng do cng trnh b chy n, ph hy c hc, phng in nguy
him
L2 Tn tht dch v cng cng do cng trnh b chy n, ph hy c hc, phng in
nguy him.
L3 Tn tht di sn vn ha do cng trnh b chy n, ph hy c hc, phng in nguy
him.
L4 Tn tht kinh t do cng trnh b chy n, ph hy c hc,phng in nguy him.

D3
L1
b
Tn tht nhn mng do h thng bn trong CT b h hng v LEMP (xung in t
ca st), v d: thit b bnh vin,.
L2 Tn tht dch v cng cng do h thng bn trong CT b h hng v LEMP.
L4 Tn tht gi tr kinh t do h thng bn trong CT b h hng v LEMP.

S2

D3
L1
b
Tn tht nhn mng do LEMP, lm phng in gy n ti h thng bn trong hay
lm h hng thit b y khoa.

L2 Tn tht dch v cng cng do LEMP, lm h hng h thng bn trong.
L4 Tn tht gi tr kinh t do LEMP, lm h hng h thng bn trong.

S3
D1

L1 Tn tht nhn mng do in p tip xc.
L4
a
Tn tht gi tr kinh t do vt nui b cht do in p tip xc.

D2
L1 Tn tht nhn mng do phng in nguy him gy chy n.
L2 Tn tht dch v cng cng do phng in nguy him gy chy n
L3 Tn tht di sn vn ha do phng in nguy him gy chy n.
L4 Tn tht gi tr kinh t do phng in nguy him gy chy n

D3
L1
b
Tn tht nhn mng do qu p cm ng v v dn truyn, lm h hng h thng
bn trong.
L2 Tn tht dch v cng cng do qu p cm ng v dn truyn, lm h hng h
thng bn trong.
L4 Tn tht gi tr kinh t do qu p cm ng v dn truyn, lm h hng h thng
bn trong.

S4

D3
L1
b
Tn tht nhn mng do h hng h thng bn trong (qu p cm ng trn ng
dy i vo cng trnh), gy nguy c n hoc h hng thit b y khoa,
L2 Tn tht dch v cng cng do h hng h thng bn trong (qu p cm ng trn
ng dy i vo cng trnh).
L4 Tn tht gi tr kinh t do h hng h thng bn trong (qu p cm ng trn ng
dy i vo cng trnh).

GHI CH:
a Ch tn tht ti sn (gi tr kinh t) khi ng vt b cht;
b Ch tn tht nhn mng khi c nguy c chy n cng trnh hoc nguy c h hng nhng thit b
bn trong c nh hng nguy him lp tc n nhn mng.

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Thit hi D1 c th gy ra nhng tn tht L1 v L4. Thit hi D2 c th gy ra cc tn tht L1,
L2, L3, L4. Thit hi D3 c th gy ra nhng tn tht L1, L2, v L4.

II. LUN CHNG CA VIC LP T BO V CHNG ST:

1. Nhu cu bo v chng st:

Theo phn tiu chun IEC 62305-2 (Xem Chng 3), mi loi tn tht L1, L2, L3, L4 do st s c
nh lng bng lng ri ro tn tht (risk of loss) R1, R2, R3, R4.
Vic lp t mt h thng chng st s cn thit khi : R
i
> R
iT
, i = 1,2,3.
Vi R
iT
: Ri ro tn tht chp nhn c (tolarable), quy nh ring cho mi loi tn tht L1, L2, L3.
T chc y ban K thut in Quc t IEC khuyn ngh mi quc gia hi vin IEC cn chn cc
mc Ri ro tn tht chp nhn c R
iT
.
Khi thit k chng st, ngi thit k s chn mt s cc bin php theo cch tng dn quy m, sao
cho: R
i
R
iT
, i = 1,2,3.
Th thit k chng st c xem l t yu cu bo v.

2. Lun chng kinh t:

Cn phi nh gi li ch kinh t ca tng th cc bin php chng st c chn. Khi ngi
thit k phi tnh ri ro tn tht thun kinh t R4.
Theo hng dn ca IEC 62305-2 (Xem Chng 3), thit k bo v chng st c xem l hiu qu
chi ph khi:
C
RL
+ C
PM
< C
L
Trong :
C
RL
: chi ph tn tht cn li (residual loss) khi c cc bin php bo v;
C
PM
: chi ph ca cc bin php bo v (protection measures);
C
L
: chi ph tng tn tht (loss) khi cha c cc bin php bo v.


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III. CC BIN PHP BO V CHNG ST:

1. Nhng bin php gim tn thng sinh mng do in git:
- Cch in thch hp cho nhng phn dn in h;
- ng th ha bng h thng ni t dng li;
- Hn ch li gn v cnh bo;
- Ni lin kt ng th chng st.

2. Nhng bin php gim thit hi vt cht:
- H thng cc thu st trong h thng chng st LPS (Lightning Protection System);
- H thng dy xung trong LPS;
- H thng in cc t trong LPS;
- Ni lin kt ng th chng st EB (Equipotential Bonding);
- Cch in (gm khong cch ly an ton) trong LPS.

3. Nhng bin php gim h hng cc h thng in v in t:
- Nhng bin php ni t v ni lin kt;
- Che chn t;
- nh tuyn ng dy;
- Giao tip cch ly;
- H thng SPD phi hp.

4. La chn cc bin php:
Ngi thit k chng st vi tha thun ca ch cng trnh s la chn cc bin php vi quy m
thch hp nht, ty theo:
- Loi thit hi v lng tn tht xy ra cho cng trnh do st;
- Cc yu t k thut v kinh t ca bin php c chn;
- Kt qu tnh ton nh gi ri ro (theo IEC 62305-2).

IV. NHNG TIU CH BO V CHNG ST CHO CNG TRNH:

1.i cng:
Mt h thng chng st l tng l mt mn chn Faraday bao bc ton b cng trnh cn bo v.
Mn chn ny phi lin tc (khng c khe h), dn in hon ho, dy thch hp, v c ni
lin kt ng th thch hp ti cc ng vo cho cc ng dch v. H thng nh vy s bo v hiu
qu chng li:

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- S xm nhp ca dng st v trng in t lin quan vo trong cng trnh;
- Nhng hiu ng nhit v ng lc ca dng st;
- Phng in nguy him v qu in p i vi nhng h thng bn trong.
Trong thc t mt h thng chng st l tng nh vy khng th thc hin c v qu tn km.
Mt mn chn khng lin tc v khng dy s cho php dng st xm nhp v gy nn:
- Thit hi vt cht v nguy him cho sinh mng;
- H hng nhng h thng bn trong.
Mt h thng chng st thc t c thit k sao cho, trong xc sut ri ro v tn tht cho php,
nhng bin php bo v c la chn v p dng s lm gim thit hi v cc tn tht lin quan.
Mt thit k nh vy s c tnh ton theo mt b gi tr ca cc tham s dng st, c nh ngha
l Mc bo v chng st LPL (Lightning Protection Level).

2.Mc bo v chng st:

Gi tr xc sut ca dng nh st c thng k nh sau:

Bng 4- Gi tr xc sut P theo dng st
(Trch Table A.3,I EC 62305-1:2010)
I (kA) P I(kA) P
0 1 60 0,2
3 0,99 80 0,1
5 0,95 100 0,05
10 0,9 150 0,02
20 0,8 200 0,01
30 0,6 300 0,005
35 0,5 400 0,002
40 0,4 600 0,001
50 0,3

Theo bng trn ngi ta nh ngha 4 mc bo v chng st LPL, v tnh c xc sut hiu qu bo v nh
sau:


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Bng 5- Cc mc bo v chng st
(Theo Table A.3, Annex A, I EC 62305-1:2010)
Gi tr Mc bo v chng st
LPL I LPL
II
LPL
III
LPL
IV
Dng nh st ti a I
max
(kA) 200 150 100 100
Xc sut dng st I < I
max
(%) a theo Table A.3,IEC
62305-1
99 98 95 95
Dng nh st tithiu I
min
(kA) 3 5 10 16
Xc sut dng st I > I
min
(%) b theo Table A.3,IEC
62305-1
99 97 91 84
Xc sut bo v chng st a x b 98 95 86 80

Theo 4 LPL nh ngha nh vy, ngi ta s xc nh cc b tham s dng st tng ng (xem phn
VI).

3. Vng bo v chng st LPZ (Lightning Protection Zones):
Cc vng bo v chng st LPZ ca mt cng trnh c xc nh bi: h thng chng st bn ngoi,
dy che chn, mn chn t, v SPD.
Bn trong mt LPZ (h ngun LPZ), nh hng ca xung in t do st LEMP s gim ng k so
vi bn ngoi LPZ (thng ngun LPZ).
Cc LPZ c nh ngha nh sau:
LPZ 0
A
: vng ni him ha do dng ca nhng tia st trc tip v trng in t c bin ton
phn (bin ln nht). Nhng h thng bn trong phi chu dng xung st ton phn hoc ring
phn (bin gim).
LPZ O
B
: vng bo v chng c dng ca nhng tia st trc tip nhng vn phi chu him ha
vi trng in t ton phn. Nhng h thng bn trong phi chu dng xung st ring phn.
LPZ 1 : vng ni dng xung st c gii hn bi s chia s dng, giao tip cch ly, v cc SPD ti
min bin. Che chn khng gian c th lm suy gim trng in t ca st.
LPZ 2, n : vng ni dng xung st c th c gii hn hn na bi s chia s dng, giao tip
cch ly, v cc SPD ti min bin. Che chn khng gian tng cng c th c dng lm suy
gim hn na trng in t ca st.


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H.7- LPZ xc nh bi h thng chng st LPS (Ngun: Fig 3, I EC 62305-1:2010)

1 Cng trnh. S1 : Tia st nh vo cng trnh.
2 H thng cc thu st. S2 : Tia st nh gn cng trnh.
3 H thng dy xung. S3 :Tia st nh vo ng dy kt ni vi c.trnh.
4 H thng in cc t.
5 ng dy i vo. S4 :Tia st nh gn ng dy kt ni vi c.trnh.
r : bn knh qu cu ln.
s : khong cch ly chng phng in nguy him.
Mt t.
lin kt ng th chng st bng SPD.
LPZ O
A
: tia st trc tip, dng st ton phn.
LPZ O
B
: khng c tia st trc tip, dng in ring phn hay cm ng.
LPZ 1 : khng c tia st trc tip, dng in ring phn hay cm ng suy gim hn; th tch c bo v
bn trong LPZ phi tn trng khong cch ly s.


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H.8- LPZ xc nh bi nhng bin php chng st LPM (Ngun: Fig. 4, I EC 62305-1:2010):
1 Cng trnh (mn chn ca LPZ 1). S1 Tia st nh vo cng trnh.
2 H thng cc thu st. S2 Tia st nh gn cng trnh.
3 H thng dy xung. S3 : Tia st nh vo ng dy kt ni vi c.trnh.
4 H thng in cc t. S4 : Tia st nh gn ng dy kt ni vi c.trnh.
5 Phng (mn chn ca LPZ). r : bn knh qu cu ln.
6 ng dy kt ni vo c.trnh. d
s
: khong cch an ton chng t trng qu cao.
Mt t.
lin kt ng th chng st bng SPD.
LPZ O
A
: tia st trc tip, dng st ton phn, t trng ton phn.
LPZ O
B
: khng c tia st trc tip, dng in ring phn hay cm ng,t trng ton phn.
LPZ 1 : khng c tia st trc tip, dng in gii hn hay cm ng, t trng suy gim.
LPZ 2 : khng c tia st trc tip, dng in cm ng, t trng suy gim hn na; th tch c bo v
bn trong LPZ 1 v LPZ 2 phi tn trng khong an ton d
s
.


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4.Nhng mc tiu c th thit k h thng chng st:

a. Bo v gim tn tht vt cht v nguy him sinh mng:
Cng trnh cn bo v phi nm bn trong LPZ 0
B
hay cao hn. Mc tiu t c vi mt h thng
chng st LPS, gm c:
H thng chng st bn ngoi, vi:
- Mt h thng cc thu st tip nhn tia st nh vo cng trnh;
- Mt h thng dy xung dn dng st mt cch an ton;
- Mt h thng in cc t phn tn dng st vo trong t.
H thng chng st bn trong trnh phng in nguy him bn trong cng trnh, p dng:
- Lin kt ng th, v
- Khong cch ly s (cch in), gia nhng thnh phn ca h thng chng st vi nhng phn
t dn in khc bn trong cng trnh.
Bn cp chng st LPC Lightning Protection Class (I, II, III, IV) c nh ngha nh mt tp hp
cc quy tc xy dng, da trn mc chng st LPL tng ng. Mi tp hp bao gm 2 nhm nhng
quy tc ph thuc v khng ph thuc mc chng st LPL.
Khi in tr sut b mt ca t bn ngoi cng trnh v ca nn bn trong cng trnh c gi thp,
th nguy him sinh mng do in p tip xc v in p bc s c gim thiu. thc hin, c
th dng nhng bin php:
- Bn ngoi:
- Cch in nhng b phn dn l;
- ng th ha t bng in cc t dng li;
- Cnh bo;
- Hn ch li gn.
- Bn trong:
- Ni lin kt ng th cho nhng ng dy ti im i vo cng trnh.
H thng chng st LPS phi ph hp cc yu cu ca tiu chun IEC 62305-3:2010.

b. Bo v gim h hng h thng bn trong:
Bo v chng cc xung in t do st LEMP gim ri ro h hng nhng h thng bn trong. Mc
tiu t c nh nhng bin php bo v chng st SPM lm hn ch:
- Xung t bin do nhng tia st nh vo cng trnh, hu qu ca ghp ni in tr v in
cm;

V Hng Cng Page 15

- Xung t bin do nhng tia st nh gn cng trnh, hu qu ca ghp ni in cm;
- Xung t bin truyn dn bi nhng ng dy kt ni vo cng trnh do nhng tia st nh
vo hay nh gn nhng ng dy;
- Ghp ni t trng trc tip vi thit b.
H thng cn bo v phi c t trong LPZ 1 hay cao hn. t c mc tiu, ngi ta c th
dng nhng bin php bo v chng st LPM nh sau:
- Mn chn t lm suy gim t trng cm ng;
- nh tuyn thch hp cho dy dn gim mch vng cm ng;
- Ni lin kt ti nhng min bin ca LPZ cho nhng phn kim loi v nhng h thng xuyn
qua bin bng dy dn lin kt hay SPD.
bo v hiu qu chng qu p, gy h hng nhng h thng bn trong, ngi ta cn dng nhng
phng tin:
- Giao tip cch ly;
- H thng SPD phi hp.
Cc bin php bo v chng st LPM phi ph hp cc yu cu ca tiu chun IEC 62305-4:2010.

V. M HNH DNG IN CA ST:

Mi n v bin c st c gi l tia st. Gia cc m my ging v mt t c hai loi tia st:
* Tia st hng xung: khi to bi mt tia tin o hng xung t m my n mt t. Nhng
tia st hng xung thng xy ra a hnh bng phng, nh xung nhng cng trnh thp.
* Tia st hng ln: khi to bi mt tia tin o hng ln t mt t n m my. Nhng tia st
hng ln thng xy ra a hnh i ni, nh xung nhng cng trnh cao.
Mi tia st gm c nhiu thnh phn l nhng xung dng, c gi l c st:
- C st ngn: l xung dng st c thi gian xung ngn hn 2ms;
- C st di: l nhng xung dng st c thi gian xung di hn 2ms.

1. Cc thnh phn ca tia st hng xung:
Tia st hng xung c th l:
- Mt c st ngn m hoc dng;
- Mt c st ngn, tip theo l mt c st di; m hoc dng;

V Hng Cng Page 16

- Mt c st ngn u tin, tip theo l nhng c st ngn; m;
- Chui cc b 3, gm mt c st di km gia 2 c st ngn, c st ngn u tin c bin
cao; m.

H.9- Cc thnh phn ca tia st hng xung (Ngun: Fig. A.3, Annex A, I EC 62305-1:2010)

2. Cc thnh phn ca tia st hng ln:
Tia st hng ln c th l:
- Vi xung dng c st ngn xp chng ln mt c st di, ri theo sau l mt c st ngn; m
hoc dng;
- Vi xung dng c st ngn xp chng ln mt c st di, ri theo sau l mt c st ngn, sau
mt lc c mt c st di n; m hoc dng;
- Vi xung dng c st ngn xp chng ln mt c st di, ri theo sau l vi c st ngn; m ;
- Vi xung dng c st ngn xp chng ln mt c st di, ri theo sau l vi b 3 sen k 2 c
st ngn kp mt c st di; m ;
- Mt c st di n, m hoc dng.

V Hng Cng Page 17

H10-Cc thnh phn ca tia st hng ln (Ngun: Fig.A.4,Annex A, I EC 62305-1:2010)

Cc tham s bin ca tia st hng ln nh hn nhiu so vi tia st hng xung, nn c th
khng cn xem xt.
Theo xc xut, 90% bin c tia st l st m, ch 10% bin c tia st l st dng. Tuy nhin
tham s dng st ca cc c st dng c gi tr cao hn tham s dng st ca cc c st m.


V Hng Cng Page 18

4. Dng sng xung dng c st:

a. Dng sng xung dng c st ngn:
Xem dng sng xung dng c st ngn

H11- Dng sng xung dng c st ngn (Ngun: Fig.A.1, Annex A, I EC I EC 62305-1)

Trong : O
1
: gc o; I : dng nh; T
1
: thi gian sn trc;
T
2
: thi gian n gi tr gia.

Tiu chun IEC 62305, da trn cc kt qu nghin cu ca Hi ng Quc t v nhng H thng
Dng in Cao CIRGRE (International Council of Large Electrical Systems), cho nhng tham s c
bn ca xung dng c st ngn theo Mc chng st LPL I nh sau:

Bng 5- Tham s c bn ca xung dng c st ngn theo LPL I
(Trch Ph lc A.4 Theo Table 3, I EC 62305-1:2010)
C xt (+) u
tin
C st (-) u
tin
C st (-) k
tip
Dng nh I (kA) 200 100 50
Thi gian sn trc T
1
(s) 10 1 0,25
Thi gian n gi tr gia T
2
(s) 350 200 100
dc trung bnh (kA/s) 20 100 200

V Hng Cng Page 19

C th tham kho Ph lc A.4 c cc tham s tng ng ca cc xung dng c st ngn theo cc
Mc chng st LPL II, III, v IV .
Dng sng xung dng c st ngn c th biu din bng phng trnh sau:

10
1
2 10
1
( / )
( / )
1 ( / )
t I
i epx t
k t
t
t
t
=
+
(1)

Trong : I : dng nh; k : h s hiu chnh cho dng nh; t : bin thi gian; 1 : hng s thi gian
sn trc; 2 : hng s thi gian ui xung.
Vi cc tham s ca phng trnh (1) theo bng sau:

Bng 6- Tham s c bn ca xung dng c st ngn theo cc LPL
(Theo Table B.1, Annex B, I EC 62305-1:2010)
Tham
s
Xung (+) u tin Xung (-) u tin Xung (-) k tip
LPL LPL LPL
I II III&IV I II III&IV I II III&IV
I(kA) 200 150 100 100 75 50 50 37.5 25
k 0,93 0,93 0,93 0,986 0,986 0,986 0,993 0,993 0,993
1
19 19 19 1,82 1,82 1,82 0,454 0,454 0,454
2
485 485 485 285 285 285 143 143 143

V d: Theo LPL I, xung st (+) u tin c hm xung:

( )
10
10
/ 19
200
exp( )
0, 93 1 ( / 19) 485
t
t
i
t
=
+

b. Dng sng xung dng c st di:
H12- Dng sng xung dng c st di (Ngun Annex A, I EC 62305-1:2010)
T
long
: thi gian xung; Q
long
: in tch

c st di

V Hng Cng Page 20

C st di c th xem nh mt dng sng ch nht, vi dng trung bnh I v di thi gian T
long
.
Tham kho Ph lc A.4 ta c cc tham s tng ng ca cc xung dng c st di theo cc Mc
chng st LPL II, III, v IV.

Bng 7- Tham s xung dng c st di theo cc LPL
Tham s dng st LPL I LPL II LPL III LPL IV
in tch c st di Q
long
(C) 200 150 100 100
Tham s thi gian T
long
(s) 0,5

VI. XC NH NHNG THAM S DNG ST:

1. nh ngha y cc tham s dng st:
nghin cu y cc tc dng ph hy ca dng st, ngi ta nh ngha y cc tham s
ca dng st:
Dng nh I (kA): gi tr ti a ca dng in st.
in tch tia st Q
flash
(C): gi tr tch phn thi gian ca dng st trong ton b thi gian tia st.
in tch c st ngn Q
short
(c): gi tr tch phn thi gian ca dng st trong thi gian xung ca c st
ngn.
Nng lng ring W/R (kJ/): gi tr tch phn thi gian ca bnh phng dng st trong ton b
thi gian tia st.
dc trung bnh (sn trc ca xung dng c st ngn)di/dt (kA/s): tc trung bnh bin thin
dng trong thi gian sn trc T
1
ca xung dng c st ngn.
in tch c st di Q
long
(C): gi tr tch phn thi gian ca dng st trong thi gian xung ca c st
di.
Thi gian c st di T
long
(s): thi gian xung ca c st di.
Thi gian sn trc T
1
(s): tham s o xc nh bng 1,25 ln khong thi gian gia nhng thi
im gi tr xung dng bng 10% v 90% tr s nh.
Thi gian c st (s): thi gian xung ca c st ngn.
Thi khong st (ms): tng thi gian xung ca chui nhiu c st m.

V Hng Cng Page 21

Tng thi gian tia st (ms): tng thi gian ca bin c tia st.
C th xem cc gi tr thng k, tham s thng k v phn b tn s tch ly ca cc tham s dng
st trong cc Ph lc A.1, A.2, A.3, v A.5.

2. Xc nh tham s dng st ti a cho LPL I:

a- Tham s ca xung dng u tin:
Ta bit xc sut xy ra tia st m l 90%, trong khi xc xut xy ra tia st dng ch c 10%. Do
tr s 1% trong phn b tn s tch ly ca mt tham s c st m:
1% x 90% = 0,9% ~ 1%
c so snh vi tr s 10% trong phn b tn s tch ly ca cng mt tham s ca c st dng:
10% x 10% = 1%
xc nh tr s max ca tham s dng st trong b tham s ca Mc chng st LPL.
Xem th phn b tn s tch ly cc tham s dng st ca Mc chng st LPL I trong Ph lc
A.5. So snh cc gi tr 10% trn cc ng 3,5,8,11 vi gi tr 1% trn cc ng 1AB, 4, 6, 9, ta
thy cc tham s I, Q
flash
, Q
short
, v W/R ca c st dng ln hn, do c chn lm tham s cho
LPL I:
I = 200 kA
Q
flash
= 300 C
Q
short
= 100 C
W/R = 10 MJ/.
Ngoi ra, xem gi tr 10% trn ng 14, ta c: di/dt = 20 kA/s.
Gi tr ny, mc d khng c chn lm tham s tiu biu cho LPL, nhng c dng tnh
tham s khc ca c st dng.
T cc tham s c bn trn ca c st dng, ta c th suy ra cc tham s khc ca n:
Thi gian sn trc c st dng:
T
1
= I / di/dt = 200 / 20
Suy ra: T
1
= 10 s

V Hng Cng Page 22

Theo phng trnh dng sng (1) xung dng c st ngn, ta c dng sng ca xung dng c st
dng u tin:

10
10
200 ( / 19)
exp( )
0, 93 1 ( / 19) 485
t t
i
t
=
+
(2)
T (2), ta c gn ng:
Q
short
= (1/0,7) I.T
2
(3)
V:
W/R = (1/2) x (1/0,7)I
2
.T
2
(4)
Vi I = 200 (kA) : dng nh ca LPL I.
T (3) v (4), ta d dng suy ra : T
2
= 350 s
Vy tham s thi gian ca c st dng l: T
1
/T
2
= 10/350 s.
Tuy nhin vi c st dng T
1
t quan trng hn.

b. Tham s ca c st di:
i vi c st di, ta c th tnh gn ng t tham s c bn ca c st dng:
Q
long
= Q
flash
Q
short
(5)

Suy ra vi LPL I: Q
long
= 200C
Xem Ph lc A.2, thi gian c st di T
long
c c tnh: T
long
= 0,5 ms.

c- Tham s ca xung m u tin:
Xem th phn b tn s tch ly trong Ph lc A.5, so snh gi tr 1% trn ng 12 vi gi tr
10% trn ng 14, ta thy tham s di/dt, ca c st m ln hn so vi c st dng:
di/dt = 100 kA/s.
ng thi xem trn ng 1, ta c: I = 100kA.
Suy ra: T
1
= I / di/dt = 100 / 100 = 1s.
T phng trnh (1) v Bng 6, ngi ta cng tnh c T
2
= 200s.

V Hng Cng Page 23

Vy tham s thi gian ca c st m l: T
1
/T
2
= 1/200 s.
Tuy nhin vi c st m, T
2
t quan trng hn.

d- Tham s ca xung m k tip:
Trn th phn b tn s tch ly trong Ph lc A.5, xem gi tr 10% trn ng 15 ta thy tham s
di/dt ca c st m k tip ln nht:
di/dt = 200 kA/s.
Do gi tr ny c chn lm tham s tiu biu cho LPL I.
ng thi xem trn ng 2, ta c: I = 50kA
Suy ra: T
1
= I / di/dt = 50 / 200 = 0,25 s.
Tng t nh trn, ngi ta cng tnh c T
2
= 100s.
Vy tham s thi gian ca c st m k tip l:
T
1
/T
2
= 0,25/100 s.
Tuy nhin vi c st m k tip, T
2
t quan trng hn.

e. Tng kt cc tham s max cho Mc chng st LPL I:
Cc tham s khc nghit nht trong nhng thnh phn tia st va kho st to thnh b tham s ca
mc chng st LPL I:

Bng 8 Tham s dng st ti a cho mc chng st LPL I (Trch Ph lc A.1 Theo Table A.1,
Annex A, I EC 62305-1:2010)
Tham s K hiu n v Gi tr
xc nh
Loi xung st ng
ph.b
tch ly
Dng nh I kA 50 xung(-)k tip 2
200 xung(+)u tin 3
in tch tia st Q
flash
C 300 tia (+) 5
in tch c st ngn Q
short
C 100 xung (+) u tin
n
8
Nng lng ring W/R kJ/ 10.000 xung(+)u tin 11
dc trung bnh di/dt kA/s 20 xung(+)u tin 14
200 Xung (-) k tip 15
in tch c st di Q
long
C 200 C st di
Thi gian c st di T
long
ms 0,5 C st di

V Hng Cng Page 24

3. Xc nh tham s dng st ti a cho cc mc chng st LPL:
Xem t l dng nh ca cc mc chng st LPL l k(%). Ta c t l k nh sau (theo 8.2, IEC
62305-1:2010):

Bng 9- T l dng nh ca cc mc chng st
LPL I LPL II LPL III LPL IV
Dng nh I (kA) 200 150 100 100
T s k (%) 100 75 50 50

Theo Bng 3 trong Ph lc A.4, ta thy cc tham dng st ca cc LPL II, III, v IV c th suy trc
tip t cc tham s dng st ca LPL I theo nguyn tc t s so snh k v k
2
. Cc tham s I, Q, di/dt
theo k; tham s W/R theo k
2
; cn cc tham s thi gian th khng i.

Bng 10- Tham s dng st ti a ca cc mc chng st LPL
Tham s K hiu n v T s
l snh
LPL I LPL II LPL III LPL IV
Dng nh I kA k 200 150 100 100
in tch c st ngn Q
short
C k 100 75 50
Nng lng ring W/R kJ/ k
2
10.000 5.600 2.500 2.500
dc trung bnh di/dt kA/s k 200 150 100 100
in tch c st di Q
long
C k 200 150 100 100
in tch tia st Q
flash
C k 300 225 150 150

3. Xc nh tham s ti thiu ca dng st:
Tham s dng nh st ti thiu c chng minh c lin quan n bn knh qu cu ln.
Qu cu ln l m hnh in-hnh hc (electro-geometric model) ca tia st. Bn knh r ca n chnh
l khong phng in cui cng (final jump distance) ca tia st. Mt nhm ca Hi cc K s in
v in t (Hoa K) IEEE chng minh mi qua h gia bn knh qu cu ln v dng st min:

0,65
min
10 r I =
(6)

Trong : r (m): bn knh qu cu ln; I
min
(A) : dng st min tng ng vi mc chng st LPL.

V Hng Cng Page 25

Mi quan h dng st min cc tham s khc c m t trong Bng 11.
Xem phng php qu cn ln trong Phn II, Chng III v trong tiu chun IEC 62305-3:2010.

Bng 11 Quan h dng st min vi tham s khc
LPL I II III IV
Dng st min I
min
(kA) 3 5 10 16
Xc sut hiu qu thu st P(%) 99 97 91 84
Bn knh qu cu ln r (m) 20 30 45 60

VII. TC DNG VT L PH HY CA DNG ST LN NHNG
THNH PHN CHNG ST:

1. Khi nim v tc dng ph hy ca st:
Cc tc dng vt l ph hy ca dng st c lin quan n nhng tham s khc nhau nh sau:
- Ph hy c hc ca dng st lin quan n cc tham s dng nh I v nng lng ring W/R.
- Ph hy nhit in tr ca dng st lin quan n tham s nng lng ring W/R.
- Ph hy nhit h quang ca dng st lin quan n tham s in tch Q.
- Qu in p v phng in nguy him to nn bi ghp in cm th lin quan n tham s dc
trung bnh di/dt ca sn trc dng st.

2. Hiu ng nhit ca dng st:

a. Hiu ng nhit in tr:
Hiu ng nhit in tr xy ra khi mt phn ng k ca dng in st chy qua mt dng dn, l
mt thnh phn ca h thng chng st hoc ca kt cu cng trnh.
Tit din nh nht ca ng dn phi ln chng li hin tng qu nhit ca ng dn
n mc gy nguy him lm chy vt liu ln cn.
Cng sut tc thi tiu tn thnh nhit trong ng dn c in tr R:

2
( ) ( ). P t i t R = (7a)

V Hng Cng Page 26

Nng lng nhit pht ra trong thi gian xung:

2
. ( ). W R i t dt =
}
(7b)
V thi gian tia st qu ngn, nn nng lng nhit khng truyn ra mi trng xung quanh c,
m c hp th hon ton bi ng dn v tng nhit ca n ln. chnh l qu trnh on
nhit.
tng nhit ca ng dn c gi tr cho bi phng trnh:

0 2
. .
1
exp 1
. .
o
w
W
R
q C
o
u u
o
( | |
( |
=
( |
( |
(
\ .
(8)
Trong :
0
u u (K) : tng nhit ca ng dn;
o (1/K) : h s nhit in tr ca kim loi ng dn;
W/R (J/) : nng lng ring ca xung dng;
0
(m) : in tr sut ca ng dn ti nhit mi trng;
q (m
2
) : tit din ca ng dn;
(kg/m
3
) : trng lng ring ca kim loi ng dn;
C
w
(J/kg.K) : nhit dung ca kim loi ng dn.
Vi cc h s ca kim loi theo bng sau y :

Bng 12- Cc h s ca kim loi (Theo Table D.2, Annex D, I EC 62305-1:2010)
H s K hiu
(n v)
Vt liu
Nhm Thp mm ng Thp
khng r
a
in tr sut
0
(m) 29x10
-9
120x10
-9
17,8x10
-9
700x10
-9
H s nhit in tr (1/K) 4x10
-3
6,5x10
-3
3,92x10
-3
0,8x10
-3

Trng lng ring (kg/m
3
) 2.700 7.700 8.920 8.000
Nhit nng chy
s
(
o
C) 658 1530 1080 1500
n nhit nng chy C
s
(J/kg) 397x10
3
272x10
3
209x10
3
-
Nhit dung C
w
(J/kg.K) 908 469 385 500
a
Khong phi t


V Hng Cng Page 27

V d: Mt h thng chng st ngoi c thit k theo LPC I, c 1 dy xung bng ng, tit din
50mm2. Gi s ton b dng st chy xung t trn dy xung ny. Cho bit nhit ca mi
trng trong nm c th ln n 35oC. Hi trong tnh trng kht khe nht, nhit mi dy xung c
th bng bao nhiu khi ang dn st.
Gii: theo (8), ta c:

0 2
. .
1
exp 1
. .
o
w
W
R
q C
o
u u
o
( | |
( |
=
( |
( |
(
\ .

6 3 9
3 6 2
1 10 10 3, 92 10 17,8 10
35 [exp( ) 1]
3, 92 10 (50 10 ) 8920 385
u

=

= 21,6
0
~ 22
0
Suy ra: = 22 + 35 = 57
o
.
Ta c th lp bng tng nhit ca cc dy dn kim loi khc nhau vi tit din thng dng,
theo nng lng ring W/R (ph thuc LPL) theo bng sau:

Bng 13- tng nhit ca nhng dy dn kim loi khc nhau (Theo Table D.3, Annex D,
I EC 62305-1:2010)
Tit din (mm
2
) Vt liu
Nhm Thp mm ng Thp khng r
a
W/R (MJ/) W/R (MJ/) W/R (MJ/) W/R (MJ/)
2,5 5,6 10 2,5 5,6 10 2,5 5,6 10 2,5 5,6 10
4 - - - - - - - - - - - -
10 564 - - - - - 169 542 - - - -
16 146 454 - 1120 - - 56 143 309 - - -
25 52 132 283 211 913 - 22 51 98 940 - -
50 12 28 52 37 96 211 5 12 22 190 460 940
100 3 7 12 9 20 37 1 3 5 45 100 190
a
Khong phi t

b. Thit hi nhit ti im chm:
Thit hi nhit ti im chm tia st c kho st nhng thnh phn ca h thng chng st c
hnh thnh h quang, v d: h thng cc thu st, khe phng in,v.v
Ti vng chn h quang, mt nhit lng rt ln pht sinh trn b mt kim loi, khng kp dn
truyn vo trong kim loi, m lm cho mt phn nh kim loi chy v bc hi ngay ti ch.

V Hng Cng Page 28

cho n gin, ngi ta dng m hnh in p ri a-nt hay ca-tt. M hnh ny c bit thch hp
i vi tm kim loi mng.
Nng lng hp th ti chn h quang do in p ri a-nt hay ca-tt :

, ,
0 0
( ). ( ). ( ).
a c a c
W u t i t dt u i t dt

= =
} }
(9)
Th tch kim loi ti chn h quang b nng chy l:

,
.
1
.
( )
a c
w s u s
u Q
V
C C u u
=
+
(10)
Trong :
V (m
3
) : th tch kim loi b nng chy ;
, a c
u (V) : in p ri a-nt hay ca-tt (l mt hng s);
Q (C) : in tch ca dng st;
(kg/m
3
) : trng lng ring ca kim loi;
w
C (J/kgK) : nhit dung ca kim loi;
s
u (
o
C) : nhit nng chy ca kim loi;
u
u (
o
C) : nhit mi trng;
s
C (J/kg) : n nhit nng chy ca kim loi.

V d: Mt h thng chng st ngoi c thit k theo LPC I, c mi kim loi lm bng tn thp m
dy 1 mm. Hi nu c tia st nh trc tip vo mi kim loi ny, th mi c th thng mt l din
tch bao nhiu? Cho bit in p ri anod-cathode vo c 30V.

Gii: Theo cng thc (10), th tch tn thp ti chn h quang c th nng chy bc hi l:

,
.
1
.
( )
a c
w s u s
u Q
V
C C u u
=
+

6 3
3
30 200 1
1,1 10
8920 385 (1080 35) 209 10
m
=
+


V Hng Cng Page 29

Suy ra din tch mi b thng:
6
3 2 2
3
1,1 10
1,1 10 11
1 10
S m cm
= = =

3. Hiu ng c ca dng st:
Hiu ng c ca dng st ph thuc vo bin ca n, thi
gian tc dng, v c tnh n hi v dng hnh hc ca cu
trc c chu tc dng. Hiu ng c cn ph thuc vo nhng
lc ma st tc ng gia cc b phn ca h thng chng st.

Hiu ng c gm c lc in t v sng xung kch. Tuy sng
xung kch nh hng nhiu n cc phn t ln cn, nhng
nh hng khng ng k ln cc phn kim loi ca h thng
chng st.
n gin m hnh, ta kho st lc in t gia hai ng dn kim loi (c th l 2 dy xung)
song song vi nhau mt di l(m), cch nhau khong cch d(m), cng dn mt dng st I(A), t
trong khng kh:

2 7 2 0
( ) ( ) 2 10 ( )
2
l l
F t i t i t
d d
= = (11)
Trong :
F(t) (N) : lc in t gia 2 dy;
i(t) (A) : dng in trn mi dy;
0
: t thm ca chn khng (gn bng ca khng kh);
l (m) : di mch song song;
d (m) : khong cch gia 2 dy.

V d: Mt h thng chng st ngoi c thit k theo LPC I, c 2 dy xung di 10m, t cch
nhau mt khong cch 1m. Hi lc in t mnh nht c th pht sinh gia 2 dy l bao nhiu?
Dng st cc i ca LPL I l 200kA; mi dy xung dn mt dng ti a l 100kA.
Theo cng thc (10):
7 3 2
10
2 10 (100 10 ) 80.000 80
1
F N kN
= = =

V Hng Cng Page 30

Mt m hnh khc, xem mt dy xung dn dng 100kA to
thnh mt gc vung, vi mt kp ni gia 2 phn ri ca
dy c t cch gc dy mt khong a. Lc in t tc
ng ln cc phn ca vng gc dy c m t theo cc
hnh bn:
(Trch I EC 62305-1:2010)

Nhn xt: xem cc v tr mi ni cch gc dy 5cm; 10cm; v 20cm, lc ko st tng ng ti mi
ni nh sau:
a (cm) 5 10 20
F (kN) 20 10 5

4. Tham s th nghim p dng cho cc thnh phn ca h thng chng st:
tnh ton ng sut cho cc thnh phn ca h thng chng st, ngi ta p dng cc tham s th
nghim theo Bng D.1, Ph Lc D, tiu chun IEC 62305-1


V Hng Cng Page 31

Bng 14 Tm tt nhng tham s him ha ca st c xem xt tnh ton nhng gi tr
th nghim cho nhng thnh phn ca h thng chng st (LPS) i vi nhng mc chng st
LPL khc nhau
(Theo Table D.1, Annex D, I EC 62305-1:2010)
Thnh phn Vn chnh Tham s him ha ca st Ghi ch
Cc thu st n mn ti im
chm (v.d. tm kim
loi mng)
LPL Q
long

(C)
T (s)
I
II
III-IV
200
150
100
<1s (p
dng trong
tia n)

Cc thu st v
dy xung
Nung nng nhit
in tr
LPL W/R
(kJ/)
T (s) nh c vi
IEC 62305-3
I
II
III-IV
10.000
5.600
2.500
p dng
trong mt
cu hnh
on nhit

Hiu ng c LPL I (kA) W/R (kJ/)
I
II
III-IV
200
150
100
10.000
5.600
2.500

Thnh phn kt
ni
Nhng hiu ng kt
hp (c, nhit, h
quang)
LPL I (kA) W/R (kJ/) T(s)
I
II
III-IV
200
150
100
10.000
5.600
2.500
<2ms (p
dng I v
W/R trong
mt xung
n

in cc dt n mn ti im
chm.
LPL Q
long

(C)
T (s) nh c theo
cc tnh cht
c/ha (n
mn,)
I
II
III-IV
200
150
100
<1s (p
dng trong
tia n)

SPD cha khe
phng in
Nhng hiu ng kt
hp (c, nhit, h
quang)
LPL I (kA) Q
short
(C) W/R
(kJ/)
di/dt
(kA/s)
p dng I,
W/R v Q
short

trong mt
xung n
(thi gian
xung T
<2ms); p
dng di/dt
trong mt
xung ring
I
II
III-IV
200
150
100
100
75
50
10.000
5.600
2.500
200
150
100
SPD cha khi
in tr oxit-
kim loi
Hiu ng nng lng
(qu ti)
LPL Q
short

(C)
C hai tnh
cht cn phi
kim tra

Cn xem xt
nhng th
nghim ring.
I
II
III-IV
100
75
50

Hiu ng tnh in LPL I (kA) T (s)
I
II
III-IV
200
150
100
<1s (p
dng trong
tia n)


V Hng Cng Page 32

VIII. XUNG T BIN DO ST TI NHNG IM CA H THNG
LP T:

1.i cng:
Xung t bin ny sinh do dng st ring phn hay hiu ng cm ng vo nhng mch vng ca h
thng lp t. nh c nhng ng dn, SPD v nhng thnh phn h thng chng st khc, c
lin quan n dng xung st, ngi ta phi xc nh c him ha do cc dng xung t bin ny
gy ra ti cc im khc nhau ca h thng lp t. Him ha ny phi nh hn mc chu xung ca
cc thnh phn trong h thng chng st v cc SPD.

2.Nhng xung t bin do tia st nh vo cng trnh ( ngun S1):
Khi dn xung t dng st c chia gia h thng in cc t, nhng b phn dn in bn ngoi
v nhng ng dy, bng cch trc tip hay qua nhng SPD.
Dng in st ring phn trong mi b phn dn in bn ngoi hay ng dy c tnh:
I
F
= k
e
x I (12)
Trong :
I
F
(kA) : dng in st ring phn; k
e
: h s chia dng;
I (kA) : dng in st ton phn (dng nh tng ng vi LPL).
Vi b phn dn in bn ngoi hay ng dy c chn ngm, h s chia dng c tnh:

1
1 1 2
2
( )
e
Z
k
Z
Z Z n n
Z
=
+ +
(13)
Vi b phn dn in bn ngoi hay ng dy c lp t trn khng, h s chia dng c tnh:

2
2 2 1
1
( )
e
Z
k
Z
Z Z n n
Z
=
+ +
(14)
Trong :
n
1
: tng s b phn dn in bn ngoi v ng dy chn ngm;
n
2
: tng s b phn dn in bn ngoi v ng dy lp t trn khng;

V Hng Cng Page 33

Z () : tng tr ni t quy c ca h thng in cc t, xem Bng 15 (Theo Table E.1, Annex E,
IEC 62305-1:2010);
Z
1
: tng tr ni t quy c ca b phn bn ngoi hay ng dy chn ngm xem Bng 15
(Theo Table E.1, Annex E, IEC 62305-1:2010);
Z
2
: in tr ni t ni ca b tr ni t ni vo ng dy lp t trn khng. Nu khng bit
gi tr in tr ni t ti im ni t ca ng dy, c th dng gi tr Z1 trong Bng Bng
15 (Theo Table E.1, Annex E, IEC 62305-1:2010). in tr sut ca t ly ti im ni t
ca ng dy.

Bng 15 Tng tr ni t quy c Z v Z
1
theo in tr sut ca t
(Theo Table E.1, Annex E, IEC 62305-1:2010)
(m) Z
1
() Tng tr ni t quy c lin quan vi loi h thng chng
st LPS
b
I II III - IV
100
200
500
1.000
2.000
3.000
8
11
16
22
28
35
4
6
10
10
10
10
4
6
10
15
15
15
4
6
10
20
40
60
GHI CH: Gi tr bo co trong bng ny tham kho tng tr ni t quy c ca mt rut dn chn ngm
di iu kin xung (10/350s).
a
Gi tr tng ng vi vi chiu di ca nhng b phn bn ngoi hn 100m. Vi chiu di <100m trong t
c in tr sut cao (> 500m), gi tr Z1 c th gp i.
b
H thng ni t ph hp vi iu 5.4 ca IEC 62305-3:2010.

Gi s gn ng, cho: Z = Z1 = Z2
Khi mt na dng st s chy vo h thng in cc t, v phn cn li s chia u cho (n1+n2)
b phn dn in ngoi v ng dy. T (13) v (14) ta c:

1 2
0, 5
( )
e
k
n n
=
+
(15)
Khi khng c che chn, v khng c nh tuyn trong ng lun kim loi, nu ng dy (v d
dy in, dy vin thng,..) vo cng trnh l c n rut dn, th mi rut dn s c mt dng st
ring phn theo h s chia dng:

'
'
e
e
k
k
n
= (16)

V Hng Cng Page 34

Khi c che chn v c ni lin kt ti ng vo cng trnh, nu ng dy c n rut dn, th mi
rut dn s c mt dng st ring phn theo h s chia dng:

'
'
( )
e s
e
s c
k R
k
n R R
=
+
(17)
Vi: R
S
() : in tr mi n v chiu di ca v che chn; R
C
() : in tr mi n v chiu di
ca 1 rut dn bn trong.
Tht ra nhng nghin cu cho thy cn c nhng yu t nh hng n h s chia dng v dng ca
dng st ring phn nh sau:
- T s in cm vi in tr L/R. T s ny thay i theo chiu di cp;

- Khc bit tng tr gia dy trung tnh v dy pha, do dy trung tnh c th nh hn, hoc do
phng thc ni t.
V d: Dy trung tnh trong ni t kiu MEN c tng tr nh hn, n s gnh 50%, cn li mi dy
pha ch chia s 17% dng xung t bin. Vi dy trung tnh v cc dy pha c tng tr bng nhau,
mi dy s chia s 25% dng xung t bin.
- Nhng tng tr ca my bin p khc nhau c th nh hng n vic chia s dng in (tuy
nhin hiu ng ny s khng ng k nu MBA c cc SPD ni qua tng tr ca n).
- Mi quan h gia in tr ni t quy c ca my bin p v nhng phn t trn ti cng
nh hng n h s chia dng (tng tr bin p cng nh th dng xung st chy vo h
thng h th cng nhiu).
- Nhng h s dng song song gy nn st gim tng tr hiu dng ca h thng h th c th
lm tng dng st vo h thng h th.

3.Nhng xung t bin lin quan n ng dy kt ni vi cng trnh (ngun S3 v S4):
Vi nhng tia st nh vo ng dy kt ni vi cng trnh (ngun S3), dng in st s phn chia
theo 2 pha ca ng dy v mt phn nh xuyn qua cch in ca n.
Vi nhng tia st nh gn ng dy (ngun S4), xung t bin c nng lng nh hn nhiu so
vi nhng xung t bin do st nh vo ng dy.
Qu dng xung k vng I
imp
, lin quan n LPL c cho trong Bng 16 v 17 (theo Table E.2 v
E.3, Annex E, IEC 62305-1:2010).
Vic chn la dng xung phi cn c theo Bng 16 (Table E.2) i vi h thng h th, v phi theo
Bng 17 (Table E.3) i vi h thng vin thng.
i vi nhng ng dy c che chn, gi tr qu dng xung trong Bng 16 v 17 (Table E.2 v
E.3) c th gim theo t l 0,5.

V Hng Cng Page 35

Bng 16 Qu dng xung k vng do nhng tia st trn h thng h th
(Theo Table E.2, Annex E, I EC 62305-1:2010)
LPL (LPC) H thng h th
Tia st S3 v S4 Tia st S2 Tia st S1
Tia st S3
b
Dng xung 10/350 s
(kA)
Tia st S4
c
Dng xung 8/20 s
(kA)
Tia st S2
d
Dng xung 8/20 s
(kA)
Tia st S1
d

Dng xung 8/20 s
(kA)
III - IV 5 2.5 0.1 5
II 7.5 3.75 0.15 7.5
I 10 5 0.2 10
GHI CH: Tt c tng ng vi dng xung trn mi rut dn ng dy.
a- Tuyn ca ng dn vng v khong cch n dng gy cm ng nh hng n qu dng xung k vng.
Gi tr trong Bng E.2 tng ng vi nhng ng dn vng khng c che chn, c ngn mch, vi
nhng nh tuyn khc nhau trong mt ta nh rng (din tch mch vng vo c 50m2, chiu rng 5m),
cch tng cng trnh 1m, bn trong mt cng trnh hay ta nh khng c che chn, vi LPS (kc=0,5). Vi
nhng c tnh ca mch vng v cng trnh khc hn, gi tr ny phi c nhn cho nhng h s Ks1, Ks2,
Ks3 ( Xem mc 8.4 IEC 62305-2:2010).
b- Gi tr tng ng vi trng hp tia st nh trng u cui (gn h tiu th in) ca ng dy 3 pha.
c- Gi tr tng ng vi cp treo, vi cp chn gi tr c th bng mt na.
d- in cm v in tr mch vng nh hng n dng ca dng in cm ng. Nu in tr mch vng
khng ng k, nn p dng dng 10/350s. y l trng hp SPD loi chuyn mch c lp vo mch
chu cm ng.

Bng 17 Qu dng xung k vng do nhng tia st trn h thng vin thng
(Theo Table E.3, Annex E, I EC 62305-1:2010)
LPL (LPC) H thng vin thng
Tia st S3 v S4 Tia st S2 Tia st S1
Tia st S3
c
Dng xung 10/350 s
(kA)
Tia st S4
d
Dng xung 8/20 s
(kA)
Tia st S2
Dng xung 8/20 s
(kA)
Tia st S1
Dng xung 8/20 s
(kA)
III - IV 1 0,035 0,1 5
II 1,5 0,085 0,15 7,5
I 2 0,160 0,2 10

GHI CH: Tt c tng ng vi dng xung trn mi rut dn ng dy.
a- Tham kho khuyn ngh K67 ca ITU-T c thm thng tin.
b- Tuyn ca ng dn vng v khong cch n dng gy cm ng nh hng n qu dng xung k vng.
Gi tr trong Bng E.2 tng ng vi nhng ng dn vng khng c che chn, c ngn mch, vi
nhng nh tuyn khc nhau trong mt ta nh rng (din tch mch vng vo c 50m2, chiu rng 5m),
cch tng cng trnh 1m, bn trong mt cng trnh hay ta nh khng c che chn, vi LPS (kc=0,5). Vi
nhng c tnh ca mch vng v cng trnh khc hn, gi tr ny phi c nhn cho nhng h s Ks1, Ks2,
Ks3 ( Xem mc 8.4 IEC 62305-2:2010).
c- Gi tr tng ng vi ng dy khng che chn c nhiu i dy. i vi mi dy xung khng che chn,
gi tr c th 5 ln cao hn.
d- Gi tr tng ng vi ng dy cp treo khng che chn. Vi nhng ng dy cp chn, gi tr c th
bng mt na.

V Hng Cng Page 36

GHI CH: ngi ta thng gi s rng in tr che chn ca cp gn bng in tr ca tt c rut cp
ghp song song.

4. Nhng xung t bin do hiu ng cm ng (ngun S1 v S2):
Nhng xung t bin do hiu ng cm ng t trng, sinh ra t nhng tia st gn (ngun S2)hay
t nhng dng st chy vo h thng chng st ngoi hay che chn khng gian ca LPZ 1 (ngun
S1) c mt dng in hnh dng 8/20 s.
Nhng xung 65t bin ny c th xem nh gn hay ngay ti d9a62u cc ca thit b bn trong
LPZ1 v ti bin LPZ1/2.
Bn trong mt LPZ 1 khng c che chn ( ngha l ch c bo v bi mt h thng chng st ngoi
theo IEC 62305-3:2010 vi rng li ln hn 5m), nhng xung t bin c dng tng i cao
do hiu ng cm ng t t trng cha b suy gim. Qu dng k vng, tng ng vi mt mc thu
st LPL c cho trong Bng 16 v 17 (Table E.2 v E.3).
Bn trong nhng LPZ vi che chn khng gian (yu cu rng li < 5m theo Annex A, IEC
62305-4:2010), s pht sinh xung t bin do hiu ng cm ng ca t trng b suy gim mnh,
nn qu dng xung t bin thp hn nhiu so vi trong LPZ1.

5. Nhng thng tin lin quan n SPD:
Vic la chn s dng cc Kh c bo v xung t bin SPD theo kh nng khng xung ca chng.
Vi h thng lp t in, tham kho IEC 61643-1; vi h thng lp t vin thng, tham kho IEC
61643-21.
Cn phi c SPD ti nhng v tr lp t sau:
a- Ti ng vo ca ng dy i vo cng trnh: ti bin ca LPZ1, ngha l ti t in chnh:
- SPD th nghim vi dng Iimp ( xung dng dng sng 10/350 s), ngha l SPD th nghim
theo Class I;
- SPD th nghim vi dng In (xung dng dng sng 8/20 s); ngha l SPD th nghim theo
Class II.
b- Gn vi thit b cn bo v : ti bin ca LPZ2 v cao hn, ngha l ti t phn phi th cp
hay ti cm in:
- SPD th nghim vi dng Iimp ( xung dng dng sng 10/350 s), ngha l SPD th nghim
theo Class I;
- SPD th nghim vi dng In (xung dng dng sng 8/20 s); ngha l SPD th nghim theo
Class II.
- SPD th nghim vi sng t hp (xung dng dng sng 8/20 s); ngha l SPD th nghim
theo Class III.

V Hng Cng Page 37

Tham s
Gi tr xc nh
cho LPL I

ng trong
Fig.A.5
95 % 50 % 5 %

I (kA)

a a

b
1A+1B
11,8 28,6
b

250

FLASH (
C)

Tia st (-)
350 Tia st (+)

S HORT
(C)

0,22 0,95
150

/R

550
0,55
10 000 15 000

m ax

24,3
b

39,9 161,5
b

di/dt
30%/90 %

20,1

98,5

b

LONG
(C)

C st di

T
LONG
(s)

C st di

Thi gian sn
trc (ms)

0,22 equent negative short
200

Thi gia c st

200

140 equent negative short
2 000
)

150

)

0,15 1 100 Tia st m (tt c)

900
Tia st m (khng c
c n)
500
a
I = 4 kA v I = 20 kA tng ng vi xc sut 98 % v 80 %, .

b
Tham s v gi tr lin quan c bo co trong tra No. 69.

---oooOOOooo---
PH LC A.1

Bng A.1 Gi tr ghi bng ca tham s st theo CIGRE (El ectra No. 41 hay
No. 69)

(Theo Table A.1, Annex A, IEC 62305-1:2010)


V Hng Cng Page 38

PH LUC A.2

Bng A.2 Phn phi chun Loga ca cc tham s dng st - Trung bnh m v phng sai
log
tnh theo cc gi tr 95 % v 5 %
s liu t CIGRE (Electra No. 41 hay No. 69)

Tham s Trung
bnh
m
Phng sai
a

log
Loi c st ng trong
Fig.A.5
I (kA) (61,1) 0,576 Ngn m u tin ( 80 %)
b
1A
33,3 0,263 Ngn m u tin ( 80 %)
b
1B
11,8 0,233 Ngn m k tip
b
2
33,9 0,527 Ngn dng u tin (n) 3
Q
FLASH
(C)

7,21 0,452 Tia st m 4
83,7 0,378 Tia st dng 5
Q
S HORT
(C)

4,69 0,383 Ngn m u tin 6
0,938 0,383 Ngn m k tip 7
17,3 0,570 Ngn dng u tin (n) 8
W /R (kJ/W) 57,4 0,596 Ngn m u tin 9
5,35 0,600 Ngn m k tip 10
612 0,844 Ngn dng u tin 11
di/dt
m ax
(kA/ms)
24,3 0,260
b

Ngn m u tin 12
40,0 0,369 Ngn m k tip
b
13
2,53 0,670 Ngn dng u tin 14
di/d
t 30%/90 %
(kA/ms)

20,1

0,420

Ngn m k tip
b

15
Q
L ON G
(C) 200 Di
T
LONG
(s) 0,5 Di
Thi gian sn
trc
(ms)
5,69 0,304 Ngn m u tin
0,995 0,398 Ngn m k tip
26,5 0,534 Ngn dng u tin (n)
Thi gian c st
(ms)
77,5 0,250 Ngn m u tin
30,2 0,405 Ngn m k tip
224 0,578 Ngn dng u tin (n)
Thi khong
(ms)

32,4

0,405

Nhiu c m

Tng thi gian tia st
(ms )
12,8 1,175 Tia st m (ton b)
167 0,445 Tia st m (khng c n)
83,7 0,472 Tia st dng
a
= log(X ) log(X ) vi X l gi t r t ham s

log 16 % 50 %

b
Nhng tham s v gi tr lin quan c bo co trong Electra No. 69.

V Hng Cng Page 39

PH LC A.3

Bng A.3 Gi tr xc sut P ca dng st I

I(A)

P(I)
0 1
3 0,99
5 0,95
10 0,9
20 0,8
30 0,6
35 0,5
40 0,4
50 0,3
60 0,2
80 0,1
100 0,05
150 0,02
200 0,01
300 0,005
400 0,002
600 0,001

V Hng Cng Page 40

PH LC A.4

Bng 3 Gi tr ti a ca tham s st theo Mc chng st LPL

(Theo Table 3, IEC 62305-1)
Xung dng u tin LPL
Tham s dng st K hiu n v I II III IV
Dng nh I kA 200 150 100
in tch xung Q
S HORT
C 100 75 50
Nng lng ring W /R MJ/W 10 5,6 2,5
T ham s thi gian T
1
/ T
2
ms / s 10 / 350
Xung m u tin
a
LPL
Tham s dng st K hiu n v I II III
Dng nh I kA 100 75 50
dc trung bnh di/dt kA/s 100 75 50
Tham s thi gian T
1
/ T
2
s / s 1 / 200
Xung k tip LPL
Dng nh I kA 50 37,5 25
dc trung bnh di/dt kA/s 200 150 100
T ham s thi gian T
1
/ T
2
s / s 0,25 / 100
C st di LPL
in tch c st di Q
LONG
C 200 150 100
Tham s thi gian T
LONG
s 0,5
Tia st LPL
in tch tia st Q
FLASH
C 300 225 150

a
Vic s dng dng dng ny ch lin quan n tnh ton v khng th nghim.


V Hng Cng Page 41

PH LC A.5
Hnh A.5 Phn b tn s t ch ly ca nhng tham s dng st (nhng ng thng i
qua gi tr 95% v 5%) (Theo Figure A.5, Annex A, IEC 62305-1:2010)


V Hng Cng Page 42

THUT NG CHNG I:

lightning flash to earth : tia st xung t.
downward flash : tia (st) hng xung.
upward flash : tia (st) hng ln.
lightning stroke : c st.
short stroke : c st ngn.
long stroke : c st di.
multiple strokes : nhiu c (st).
point of strike : im nh trng.
lightning current : dng in st.
current peak value : gi tr nh dng in (dng nh).
average steepness of the front of impulse current: : dc trung bnh sn trc ca dng xung.
front time of impulse current : thi gian trc ca dng xung.
virtual origin of impulse current : im gc o ca dng xung.
time to half value on the tail of impulse current : thi gian n gi tr gia trn ui dng xung.
flash duration : di tia st.
duration of long stroke current : thi gian (xung dng) c st di.
flash charge : in tch tia st.
impulse charge : in tch xung.
long stroke charge : in tch c st di.
specific energy : nng lng ring.
specific energy of impulse current : nng lng ring ca dng xung.

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structure to be protected : cng trnh cn bo v.
line : ng dy.
telecommunication lines : ng dy vin thng.
power lines : ng dy in.
lightning flash to a structure : c st nh vo cng trnh.
lightning flash near a structure : c st nh gn cng trnh.
electrical system : h thng in.
electronic system : h thng in t.
internal systems : nhng h thng bn trong.
physical damage : thit hi vt cht.
injury of living beings : tn thng sinh mng.
failure of electrical and electronic systems: h hng nhng h thng in v in t.
lightning electromagnetic impulse : xung in t do st.
surge : xung t bin.
lightning protection zone (LPZ) : vng bo v.
risk : ri ro.
tolerable risk : ri ro chp nhn c.
lightning protection level (LPL) : mc bo v chng st
protection measures : bin php bo v.
lightning protection : bo v chng st.
lightning protection system (LPS) : h thng chng st.
external lightning protection system : h thng chng st ngoi.
internal lightning protection system : h thng chng st trong.
air-termination system : h thng cc thu st.
down-conductor system : h thng dy xung.

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earth-termination system : h thng in cc t.
external conductive parts : b phn dn in bn ngoi.
lightning equipotential bonding : lin kt ng th chng st.
conventional earthing impedance : tng tr ni t quy c.
LEMP protection measures : bin php bo v chng xung in t do st.
magnetic shield : che chn t.
surge protective device (SPD) : kh c bo v xung.

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THIT K BO V CHNG ST THEO IEC 62305 Chng 1: Nguyn tc chung v Bo v Chng st

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