Part A (10*2=20 Marks) 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. State maximum power transfer theorem. State superposition theorem. Define quality factor.

. Draw the diagram for double tuned circuit. State mass action law Define diffusion capacitance. Defne early effect. List any two differences between FET and BJT. Draw the two transistor model of SCR Mention the application of LCD. Part B (5 *16=80 Marks)

11. a) Calculate the current through 15 ohm resistor in the network shown in figure below using mesh and nodal analysis. (16)

2
100V

15 10 10 10

12.

80V

or b) i. State thevenins theorem and write its steps (4) ii. Determine the current through the 10 ohm resistor in the circuit shown in figure using thevenins theorem. (12) 10

15V

2 1
10V

2 1

13. a) Derive en expression for DC response in RLC series circuits.(16) Or b) Explain briefly about single tuned circuit (16) 13. a) i.Draw the energy band structure of PN junction diode and derive the barrier voltage Vo. (10) ii. Write the diode current equation (6) Or b)i. Discuss the effect of temperature in PN junction diode.(8) ii. Write down the two breakdown mechanisms. (8) 14.a) Explain the construction and working of enhancement and depletion MOSFET. (16) Or b) Briefly explain the NPN and PNP transistor (10) ii. Compare BJT with MOSFET (6) 15. a) i. Explain the construction and working principle of SCR (8) ii. What is UJT? Briefly explain its characteristics(8) or b).i Write short notes on Laser(8) ii Write short notes on LED(8)