1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

Discrete POWER & Signal Technologies

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

COLOR BAND MARKING DEVICE FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4448 1ST BAND 2ND BAND BLACK BLACK BROWN BLACK BLACK BROWN BLACK BROWN BROWN GRAY BLACK RED WHITE BROWN BROWN BLACK

LL-34 DO-35
THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL

High Conductance Fast Diode

Sourced from Process D3.

Absolute Maximum Ratings*

Symbol
W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current

TA = 25C unless otherwise noted

Parameter

Value
75 200 300 400 1.0 4.0 -65 to +200 175

Units
V mA mA mA A A C C

Tstg TJ

Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 200 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics
Symbol
PD RJA

TA = 25C unless otherwise noted

Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient

Max
1N/FDLL 914/A/B / 4148 / 4448 500 3.33 300

Units
mW mW/C C/W

1997 Fairchild Semiconductor Corporation

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

High Conductance Fast Diode

(continued)

Electrical Characteristics
Symbol
BV IR

TA = 25C unless otherwise noted

Parameter
Breakdown Voltage Reverse Current

Test Conditions
IR = 100 A IR = 5.0 A VR = 20 V VR = 20 V, TA = 150C VR = 75 V IF = 5.0 mA IF = 5.0 mA IF = 10 mA IF = 20 mA IF = 30 mA IF = 100 mA VR = 0, f = 1.0 MHz VR = 0, f = 1.0 MHz IF = 10 mA, VR = 6.0 V (60 mA), Irr = 1.0 mA, RL = 100

Min
100 75

Max

Units
V V nA A A mV mV V V V V pF pF nS

VF

CO

TRR

1N914B / 4448 1N916B 1N914 / 916 / 4148 1N914A / 916A 1N916B 1N914B / 4448 Diode Capacitance 1N916/A/B / 4448 1N914/A/B / 4148 Reverse Recovery Time

Forward Voltage

620 630

25 50 5.0 720 730 1.0 1.0 1.0 1.0 2.0 4.0 4.0

Typical Characteristics

REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA

V R - REVERSE VOLTAGE (V) V R

REVERSE CURRENT vs REVERSE VOLTAGE IR - 10 to 100 V

IR - REVERSE CURRENT (nA) 120
Ta= 25C

160 150 140 130 120 110

Ta= 25C

100 80 60 40 20 0 10 20 30 50 VR - REVERSE VOLTAGE (V) 70 100

5 10 20 30 50 I R - REVERSE CURRENT (uA)

100

GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature

FORWARD VOLTAGE vs FORWARD CURRENT VF - 1 to 100 uA

V F - FORWARD VOLTAGE (mV) 550 500 450 400 350 300 250 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100
Ta= 25C

FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 100 mA

V F - FORWARD VOLTAGE (mV) 750 700 650 600 550 500 450 0.1 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10
Ta= 25C

1N/FDLL 914/A/B / 916/A/B / 4148 / 4448

High Conductance Fast Diode

(continued)

Typical Characteristics

(continued)

FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA

V V F F - FORWARD VOLTAGE (mV)

VF - 0.01 - 20 mA (-40 to +65 Deg C) FORWARD VOLTAGE vs AMBIENT TEMPERATURE

900 800 700 600 500 400 300 0.01 0.03 0.1 0.3 1 3 I F - FORWARD CURRENT (mA) 10
Ta= +65C
Typical

V F - FORWARD VOLTAGE (V)

1.6 1.4 1.2 1 0.8

Ta= 25C

Ta= -40C Ta= +25C

0.6 10

20

30 50 100 200 300 I F - FORWARD CURRENT (mA)

500

CAPACITANCE vs REVERSE VOLTAGE VR = 0.0 to 15 V

Ta= 25C

REVERSE RECOVERY TIME vs REVERSE CURRENT

REVERSE RECOVERY (nS) 4 3.5 3 2.5 2 1.5 1 10 20 30 40 50 REVERSE CURRENT (mA) 60
Ta= 25C

0.9 CAPACITANCE (pF)

0.85

0.8

0.75

4 6 8 10 REVERSE VOLTAGE (V)

12

14

IF = 10 mA - IRR = 1.0 mA - Rloop = 100 Ohms

P P D D - POWER DISSIPATION (mW)

Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (TA)
500 I - CURRENT (mA) 400 300 200 100 0
IR -F OR WA RD

POWER DERATING CURVE

500

DO-35
400

Io - A ST VER AT AGE EREC TIFIE mA D CU RRE NT mA

CU RR EN TS TE AD Y

300

SOT-23
200

100

50 100 150 o TA - AMBIENT TEMPERATURE ( C)

50 100 150 IO - AVERAGE TEMPERATURE ( oC)

200

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx CoolFET CROSSVOLT E2CMOSTM FACT FACT Quiet Series FAST FASTr GTO HiSeC
DISCLAIMER

ISOPLANAR MICROWIRE POP PowerTrench QS Quiet Series SuperSOT-3 SuperSOT-6 SuperSOT-8 TinyLogic

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.