1.

1

109

1-1 6

(Ionization)



(Ionization)

1-2

Ne = 2n2
Ne , n
1 = 2(1)2 = 2
2 = 2(2)2 = 8
3 = 2(3)2 = 18
4 = 2(4)2 = 32

1.2

4
( Energy Band)


(Energy Gap)

1-3
1-3
(Breakdown)



1-4

4

 1-4
4
3

1.3


8 1-5

1-5

1.4



1-6

1-6
1-7

1-7

 1-8

1-8
1.5 N P


N P
(Doping)

(Doping)
N P

N (N-Type Semiconductor)
5
(AS) (P) (Bi) (SB)
N 1-9
5

 1-9 5

4
1
1 (donor atom)
()
(Majority and Minority Carriers) N (
Negative )
5
N

P (P-type Semiconductor)
3
(B) (IN) (GA) 1-10

 1-10 3

P ( Positive )
3

P

1-11

1-12 N P
P
3 P
(
) N
5
N

 (Forming of the Depletion Region)

N P
1-13

1-13) N P

1-13 ) N
P N P

N P
N
P N
N P
P
N
P

 P N

P-N 0. 7V 0.3 V
25 C
(Biasing the Diode)

2 (Forward Bias)
(Reverse Bias)
P
N 1-14

1-14
R

1-15
1-15
N P P

(Reverse Bias)
N P
1-16

1-16
P N
P N
P-N
1-17

1-17
(Leakage Current)

N
P

 P-N N
N
1-18

1-18

(Reverse Breakdown)


P

1-19 ( 0.7 V)
P-N 0.7 V

 1-19

1-20

1-20

 1-20
0.7 V
0. 7V

(
) 1-21

1-21
(Breakdown) 50
V 1000 V

1-22

 1-22
0.3V 0. 7V
32 14

1-23

1-23



P N 0.3 V 0.7 V
1-24

1-24
1-24
IR = (VBias VF )/ RLimit ; VF = 0.7 V
IR = 0 A VR = VBias

1-25

 1-25
1-25

IR = (VBias 0.7 V) / RLimit + rd ; 0.7 + IRrd

IR = VBias / rR
1 a)
rd = 10
b)
rd = 5 M

VF = 0 V
IF = VBias / RLimit
= 10 V / 1 k
= 10 mA

VF = 0.7 V
IF = (VBias VF) / RLimit
= (10 V 0.7 V) / 1 k
= 9.3 V

IF = (VBia 0.7 V) / R Limit + rd

= (10 V 0.7 V) / 1 k + 10
= 9.21 mA
VF = 0.7 V + IR + rd
= 0.7 V + (9.21 mA )(10)
= 792 mV
b)
IR = 0 A
VR = V Bias
= 5V

IR = 0 A
VR = VBias
= 5V

IR = VBias /(rR + RLimit)

= 5 V / (5 M + 1 k)
= 0.99A
VR = VBias IR x RLimit
= 5 V 0.99 A x 1 k
= 4.99 V
(Temperature Effect)



1-27

a)

 1-27




(VBR)
(VBR)
2
10

1-28

 1-28

2 ( Other Two Terminal Device)

(Zener diode)

( Zener Breakdown Voltage: Vz)

Vz
Iz

VR

I
IR

 (Varactor or Varicap Diode)

(CT )

CT ( of )
C (0)

VR (V)
0

(Automatic Fine
Tuning : AFC ) ( Variable Bandpass Filter)

(Ligth Emitting Diode : LED )

LED
p n Si Ge
A

+
ID

K
VD

LED
(Electroluminescence)
LED , ,

(Photo Diode)
p-n

VD

ID

(Detector)
,

2 (Circuit with Ground or Common Connection)

(Ground)
(Common)

R1
E

R2

R1

R3

=E

R4

R3

R2

R4

2.2 k
1k

1.5 k

3.3 k
10 V

20 V

2.2 k
1k

1.5 k

3.3 k
+ 10 V

- 20 V

3
+ 10 V
2.2 k

2.2 k

1.5 k
1k

1.5 k

1k

3.3 k

- 20V

3.3 k

+10 V

- 20 V

3.
Load-Line

1. 0
2. 0

ID
E

E/R

+
VD

ID

+
R VR
-

Q-Point
IDQ
VD
VDQ

1. (VD = 0)
(KVL)
E VD VR = 0
E = VD + VR
E = VD + ID.R
(VD ) = 0 V
E = VD + ID.R
= 0 V + ID.R
E = ID.R
ID = E/R
VD = 0 V
2. (ID = 0 V)

E = VD + ID.R
= VD + (0 A). R
VD = E
ID = 0 A
3. VD ID
(Q-Point)
(VDQ) (IDQ)
(Diode Approximations)

1. (E) VT
2. (ravg)
3. VT Si 0.7 V. Ge = 0.3 V
4. ID (Ideal diode)

4. (Series Diode Configuration with DC

Inputs)

1.

0.7 V
E

Si

+
VR

VD

+
R

VR

VD = VT
VR = E - VD
ID = IR = VR / R

2.

+ VD = E

Si

+
R

VR

VD = E
I D = IR = 0 A
VR = IR.R = ID.R = (0 A).R = 0 V
VR = 0 V

+
R

VR

 4 VO ID
Si
+12

Si

0.7 V 0.7 V
+

Vo

ID

+12

5.6 k

IR

ID

Vo =
=
=
=
=
=
=

E VT1 VT2
12 0.7 0.7
10.6 V
IR
VR / R =
10.6 / 5.6 k
1.79 mA

5.6 k Vo

(Ans)
VO / R
(Ans)

5. (Parallel and Series Parallel Configuration)

5 VO, IT
0.33 k

0.33 k
Si

Si

+
Vo

VO = VD =
E VR V =
10 VR - 0.7 =
=
IT.R
IT =
IT =

0.7
0
0
10 0.7
9.3 / 0.33K
28.18 mA

+
0.7 V

0.7 V

Vo