Physics of Semiconductor Nanostructures

Reference Books & Articles:

[1] "The physics of low-dimensional semiconductors: an introduction", by John H. Davies, Cambridge university press (1998).
URL: http://userweb.elec.gla.ac.uk/j/jdavies/ldsbook (Chapter 1,3,4,6,9,10)

[2] Thesis Correlations in semiconductor quantum dots , Marek Korkusinski, June 2004, University of Ottawa (Chapter1,2,3 )
[3] Thesis Collective Excitations and Coulomb Drag in Two-Dimensional Semiconductor Systems , Shun-Jen Cheng,
September 2001, Universitt Wrzburg (Chapter2 )

[4] A Guide to Feyman Diagrams in the Many-Body Problem, R.F. Mattuck (Dover Books) (1992)
[5] Electronic structure of quantum dots, S. M. Reimann and M. Manninen, Reviews of Modern Physics, 74, 1283 (2002)

[6] Magnetism in condensed matter, Stephen Blundell, Oxford University Press (2001) (Chapter 1 &2)

[7] Quantum theory of the optical and electronic properties of semiconductors, H. Haug and S. W. Koch, World Scientific
(Chapter 1)

[8] Excitonic artificial atoms: engineering optical properties of quantum dots, Pawel Hawrylak, Phys. Rev. B 60, 5597 (1999).




(http://www.cc.nctu.edu.tw/~sjcheng/Frameset05.htm)
Department of Electrophysics, National Chiao Tung University
Evaluation:
1. Exercises: 50%
2. Oral presentation: 50%

2006 Spring Semester
Semiconductor nanostructures
Mesa-etched dot
Self-Assembled
Quantum Dots
Three-dimensional STM image of an uncovered
InAs quantum dot grown on GaAs(001).
J. Marquez, et al,
Appl. Phys. Lett. 78 (2001) 2309.
- - - - - - - - - -
-
+
1m~100nm
Gate-defined dot
Quantum ring
1m~100nm
~20nm
~20nm
Semiconductor nanostructures
Colloidal nanocrystals
~ few nm
Carbon nanotubes: One dimensional system
(Courtesy Cees Dekker, Delft Institute of Technology, the Netherlands.)
This research was reported in the 7 May 1998 issue of Nature.

Here are some real-world nanotube materials, produced by
laser ablation of a graphite target containing metal catalyst
additives. On top is an atomic force microscopy image of a
chiral tube with a diameter of 1.3 nanometers
(Technical University, Delft:
www.pa.msu.edu/cmp/csc/nanotube.html).
Outline
Outline:
1. Introduction to semiconductor nanostructures [1,2](1w)
2. Formation of semiconductor nanostructures [1,2](0.5w)
gate-defined quantum dots (QDs)
self-assembled QDs
synthesized nanocrystals (NCs)
quantum wires, quantum rings
3. Single-particle properties [1,2,3](2w)
band theory in solids
k.p theory
envelope function approximation
quantum disk
parabolic model
spherical quantum dots (QDs)
quantum rings*
strain effects *
asymmetric nanostructures
4. Electric and magnetic fields [1] (1w)
nanostructures in magnetic fields
nanostructures in magnetic fields :Stark effects
Fermis golden rule
The Aharonov-Bohm effect*
Quantum Hall effects in 2D and 0D systems*
5. Many-particle problems [1,4] (3w)
Hartree & Hartree-Fock approximation(0.5w)
Second quantization(2.5w)
Configuration interaction method
Technique of exact diagonalization*
Many electrons in QDs

6. Transport properties[5,6] (2w)
Coulomb Blockade spectroscopy(1w)
Hunds rule(1w)
Quantum Hall droplets in QDs*
7. Optical properties[1,7,8](2w)
Dipole approximation & Fermis golden rules
emission and absorption spectrum
Fine structure of the optical spectrum of QDs
8. Magnetic properties[6](2w)
Magnetism of QDs
Semi-magnetic QDs
Spintronics

14
Oral presentation: 2
Home work: 4~6
[#]: reference#; *: optional; (nw): n weeks
Outline
Outline:
1. Introduction to semiconductor nanostructures [1,2](1w)
2. Formation of semiconductor nanostructures [1,2](0.5w)
gate-defined quantum dots (QDs)
self-assembled QDs
synthesized nanocrystals (NCs)
quantum wires, quantum rings
3. Single-particle properties [1,2,3](2w)
band theory in solids
k.p theory
envelope function approximation
quantum disk
parabolic model
spherical quantum dots (QDs)
quantum rings*
strain effects *
asymmetric nanostructures
4. Electric and magnetic fields [1] (1w)
Electrostatic potential
Stark effects
Fermis golden rule
The Aharonov-Bohm effect*
Quantum Hall effects in 2D and 0D systems*
5. Many-particle problems [1,4] (3w)
Hartree & Hartree-Fock approximation(0.5w)
Second quantization(2.5w)
Configuration interaction method
Technique of exact diagonalization*
Many electrons in QDs

6. Transport properties[5,6] (2w)
Coulomb Blockade spectroscopy(1w)
Hunds rule(1w)
Quantum Hall droplets in QDs*
7. Optical properties[1,7,8](2w)
Dipole approximation & Fermis golden rules
emission and absorption spectrum
Fine structure of the optical spectrum of QDs
8. Magnetic properties[6](2w)
Magnetism of QDs
Semi-magnetic QDs
Spintronics

14
Oral presentation: 2
Home work: 4~6
[#]: reference#; *: optional; (nw): n weeks
Introduction to semiconductor nanostructures
Semiconductor (SC).
Fabrication
Scale of nanometer.
Interesting Physics in SC nanostructures:
- transport measurement
- optical spectroscopy
- magnetic (& spin) properties
Observations & Measurements
Possible Applications

Physics of Semiconductor Nanostructures
Whats SC?
Why SC?
Whats structure?
Whats nano-scale?
Why nanostructures?
Why study the physics?
Whats interesting physics?
How to study the physics?
Understand better the
physics, then
ins SC metal
<< <
Conductor
(Cu, Ag..)
Semiconductor
(Si, GaAs..)
Insulator
(SiO2,..)
Resistivity
(Ohm.cm)
2 6
10 ~ 10

9 2
10 ~ 10
22 14
10 ~ 10
Metal, Insulator, and Semiconductor
Band Diagram of Solids
1s
2s
2p
3s
2N
2N
6N
N
Single atom Solid
Valence band
conduction band
Energy
position
Metal, Insulator, and Semiconductor
Valence Band (VB)
Conduction Band (CB)
metal insulator
semiconductor
T>0 doping
+ + + + + +
Energy gap (Eg)
ins SC metal
R R R << <
Semiconductor Heterostructures*
A
_
B
_
Confinement
potential
* 2000 Nobel prize in physics
Is Nanometer small or large?
A 10 10 1
9

= =

m nm
Lattice constant:
nm
0 1
10 ~ 10

F of bulk:
nm
2 1
10 ~ 10
Effective Bohr Radius: nm
1
10 ~
Length scales in semiconductors (SCs)
Coherent length:
Mean free path:
0.1nm
1m
100nm
10nm
1nm
100m
10m
E
m
e
s
o
s
c
o
p
i
c

a
2
2
1
F
F F
k E

(see Electronic transport in mesoscopic systems, S. Datta,
Cambridge Univ. Press)
Low-Dimensional Systems
Quantum Well (quasi-2D)
Quantum Wire (quasi-1D)
Quantum Dot (quasi-0D)
<<100nm, in usual.
Formation of Quantum Dots
- - - - - - - - - -
-
+
etching
~10nm
1m~100nm
Self-assembled dots
Gate-defined dot
Pillar dot
1m~100nm
Advanced Applications
Fundamental Interest
Atom physics,
Many-body physics,
Quantum optics
etc..
Quantum-dot lasers,
Photodetectors,
Single electron devices,
Single photon devices,
Quantum computing,
etc.
Semiconductor nano-technology,
Material engineering,
etc
E
dN/dE (density of states)
bulk
~100meV
(for GaAs)
10nm
Nano-scale
Room temp.
kT~25meV
Aspects of Nanostructures
Nano-Technology
I
V
I
V
+
_
w
Current transport through a classical resistance
Conductance (G)
W
L
W
G
GV I

=
law s Ohm'
Quantum Point Contact
(see also J.H. Davies Fig.5.22/p186)
B.J. van Wees, PRL 60, 848(1988).
Quantum Point Contact
Vg
1
2
3
4
5
) / 2 (
2
h e G
_
: metal (gate)
: two-dimensional electron gas
h: Plancks constant
I
Vg Vg
~250nm
+
V
W
O = =
-
807 . 25812
resistance s Klitzing' von
2
e
h
R
K
*see also quantum Hall effect (Nobel prizes in 85,98)
p228 in textbook.
Quantum Point Contact (metal)
Quantized conductance through individual rows of suspended gold atoms
H. OHNISHI, et al., Nature 395, p780 (98)
F of metal:
nm
1 0
10 ~ 10
~0.9nm
) (
, , SC F M F
<<
Coulomb Blockade in Quantum Dot (Q.D.)
J. Weis, et al.
Phys. Rev. Lett. 71, 4019-4022 (1993)
I
G
Vg
Vg
Vg
Quantum dot
single electron transister (SET)
G
S
D
G
S D
(a review article about Q.D.:
S.M. Reimann and M. Manninen, Review of Modern Physics, 74,1283 (2000))
Quantum Hall Droplet
Vg
dot
Source
Drain
N-1
B
B
B
E
2 = v
2 = v
Spin polarization
T.H.Oosterkamp, PRL, 82, 2931 (1999)
Photoluminescence (PL) from Quantum Wells
Photoluminescence (PL) from (parabolic)
Quantum Well
R.C. Miller, et al. Phys. Rev. B 29, 3740 (84)
Also see sec. 4.3 in textbook
40meV
PL from Ensemble of Quantum Dots
Sylvain Raymond and cowokers, NRC, Canada
~20nm
Artificial atoms!!!
Magneto-PL from Ensemble of Quantum Dots
B
s
p+
p-
d+
d
d-
Sylvain Raymond et al. PRL(2004)
- Fermis golden rule
- intitial state: ground state.
- final state: GS & all excited states

=

f
f i
E E N GS i P N f N A ) ( | , ) 1 ( , | ) , (
2
e o e

=
i
i i
c h P
o o , ,
The interband polarization operator
Hawrylak, Cheng M.Bayer et al, Nature405, 923 (2000)
B=0
experiment
theory
X6
Gs-to-GS
Single-Dot PL Spectrum
PL from Single Quantum Dot
Robin Williams and cowokers, at NRC, Canada
20meV
~20nm
U. Banin, Y. Cao,D. Katz, and O. Millo, Nature vol.400, 542 (1999)
InAs NC
Coulomb Blockade spectrum of a Single Nanocrystal
Experiment
Calculation
Chemical potential
( ) ( 1)
N GS GS
E N E N

4

N=1 2 3 4 5 6 7 8
Semiconductor Nanocrystals
B
0
M
B
_
c
>
c
Paramagnetism
0
M
B
_
c
<
c
Diamagnetism
M
SQUID
B
Paramagnetism of QDs: experimental results
0 10000 20000 30000 40000 50000
-0.0006
-0.0003
0.0000
0.0003
0.0006
0.0009


_

(
e
m
u

m
o
l
-
1
O
e
-
1
)
Magnetic Field (Oe)
PbSe QD
0 50 100 150 200
0
2000
4000
6000
8000
10000


100 Gauss
1000 Gauss
10000 Gauss
1
/
_

(
m
o
l

G
a
u
s
s

/

e
m
u
)
Temperature (K)
0 40 80 120 160 200
-0.0002
0.0000
0.0002
0.0004
0.0006
0.0008
0.0010


_

(
e
m
u

/

m
o
l

G
a
u
s
s
)
Temperature (K)
100 Gauss
1000 Gauss
10000 Gauss
Cd
0.996
Mn
0.004
Se
1
_
_
M
SQUID
B
T
CdMnSe QD
B
_
Wen-Bing Jian et al, to be published
Wen-Bing Jian et al
Low-field paramagnetism
0
0
magnetic susceptibility
: paramagnetism
: damagnetism
M
B
_
_
_
c

c
>
<
Observation of Nanostructures
Scanning Electron Microscope (SEM)
Electron beam
10-40kV
Resolution>10nm *
* See, for instance, University Physics,
by Harrison Benson, John Wiley & Sons, Inc.
Observation of Nanostructures
Transmission Electron Microscope (TEM)
Electron beam
50-100kV
Resolution>0.5nm
Observation of Nanostructures
diffraction
Scannning Tunneling Microscope (STM)* * Nobel prize in 1986
Three-dimensional STM image of an uncovered
InAs quantum dot grown on GaAs (001).
J. Marquez, et al, Appl. Phys. Lett. 78 (2001) 2309.
I=const
Resolution:
0.001nm (vertical)
0.1nm (horizontal)
Observation of Nanostructures
Possible Applications
Quantum dot infrared photodetectors, QDIPs
Optical memories
Single-Photon sources
-- Aslan, B.,Liu, H.C., Korkusinski, M., Cheng, S.-J., and Hawrylak, P., Appl. Phys. Lett. 82, 630 (2003)
--Petroff, P.M., in:Single Quantum Dots: Fundamentals, Application, and New Concepts, Peter Michler
(Ed.) (Spring,Berlin,2003);
-- Lundstrom, T., Schoenfeld, W. Lee, H., and Petroff, P.M., Science 286,2312(1999)
--Michler, P., Kiraz, A., Becher, C., Schoenfeld, W.V., Petroff, P.M., Zhang, L., Hu, E, and Imamoglu,
A., Science 290, 2282 (2000)
--Moreau, E., Robert, I., Manin, L., Thierry-Mieg, V., Gerard, J.M., and Abram, I., Phys. Rev
Lett. 87,183601 (2001)
--Santori, C., Pelton, M., Solomon, G., Dale, Y., and Yamamoto, Y., Phys. Rev. Lett. 86, 1502 (2001)
--M.Pelton et al, Phys. Rev. Lett.89, 233602 (2002)
0.0
0.2
0.4
0.6
0.8
1.0
100 150 200 250 300 350
0.0
0.2
0.4
0.6
0.8
1.0


N
o
r
m
i
l
e
z
e
d

p
h
o
t
o
r
e
s
p
o
n
s
e
P-polarization
T=6 K
sample A
sample B
sample C

P
S
IR
45
o

z
Figure 2
(b)
(a)


S
c
a
l
e
d

p
h
o
t
o
r
e
s
p
o
n
s
e
Photon energy (meV)
S-polarization
T=6 K
sample A
sample B
sample C
0.0
0.2
0.4
0.6
0.8
1.0
30 40 50 60 70 80
0.0
0.2
0.4
0.6
0.8
1.0


N
o
r
m
i
l
i
z
e
d

p
h
o
t
o
r
e
s
p
o
n
s
e
P-polarization
T=6 K
sample A
sample B
sample C
Figure 3
(b)
(a)


N
o
r
m
i
l
i
z
e
d

p
h
o
t
o
r
e
s
p
o
n
s
e
Photon energy (meV)
S-polarization
T=6 K
sample A
sample B
sample C
e
I
Intra-band photocurrent spectrum
Possible Applications
QD lasers
Terahertz radiation
--Arakawa, Y., and Sasaki, H., Apl. Phys. Lett. 40, 939 (1982); Fafard, S., Hinzer, K., Raymond, S., Dion,
M.,McCAffrey, J., Feng, Y., and Vharbonneau, S., Science 22, 1350 (1996); Maximov, M.V., Shernyakov,
Yu.M., Tsatsul'nikov, A.F., Lunev, A.V., Sakharov, A.V., Ustinov, V.M., Egorov, A.Yu., Zhukov, A.E.,
Kovsh, A.R., Kop'ev, P.S.,Asryan, L.V., Alferov, Zh.I., Ledentsov, N.N., Bimberg, D., Kosogov, A.O., and
Werner, P., J. Appl. Phys. 83, 5561 (1998); Ledentsov, N.N., Ustinov, V.M., Shchukin, V.A., Kop'ev, P.S.,
Alferov, ZH.I., and Bimberg, D., Semiconductors 32, 343 (1998); Fafard, S., Wasilewski, Z.R., Allen, C.
Ni., Hinzer, K., McCaffrey, J.P., and Feng, Y., Appl. Phys. Lett.75, 986 (1999)
--Anders, S., Rebohle, L., Schrey, F.F., Schrenk, W., Unterrainer, K., and Strasser, G., Appl. Phys. Lett.
82, 3862 (2003)
--Apalkov, V.M. and Chakraborty, T., Appl. Phys. Lett. 78, 1820 (2001)
--Wingreen, N.S. and Stafford C.A., IEEE J. Quant. Electron. 33, 1170 (1997)
Single electron transistor, quantum computation,
NCs for Biosensing