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  • Diode 1N60

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    Rony Mu
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    This document provides specifications for 1N60 and 1N60P germanium diodes. The diodes feature majority carrier conduction, high current capability, low forward voltage drop, and ultra-fast switching. They are suitable for use as detectors in devices like recorders, TVs, and radios. The document lists the diodes' mechanical characteristics, absolute ratings, typical electrical characteristics at different currents and voltages, and provides characteristic curves showing properties like forward voltage, reverse current, junction capacitance, and detection efficiency.

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    This document provides specifications for 1N60 and 1N60P germanium diodes. The diodes feature majority carrier conduction, high current capability, low forward voltage drop, and ultra-fast switching. They are suitable for use as detectors in devices like recorders, TVs, and radios. The document lists the diodes' mechanical characteristics, absolute ratings, typical electrical characteristics at different currents and voltages, and provides characteristic curves showing properties like forward voltage, reverse current, junction capacitance, and detection efficiency.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    84 views2 pages

    Diode 1N60

    Uploaded by

    Rony Mu
    This document provides specifications for 1N60 and 1N60P germanium diodes. The diodes feature majority carrier conduction, high current capability, low forward voltage drop, and ultra-fast switching. They are suitable for use as detectors in devices like recorders, TVs, and radios. The document lists the diodes' mechanical characteristics, absolute ratings, typical electrical characteristics at different currents and voltages, and provides characteristic curves showing properties like forward voltage, reverse current, junction capacitance, and detection efficiency.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    1N60, 1N60P

    Features
    Metal silicon junction, majority carrier conduction High current capability, Low forward voltage drop Extremely low reverse current lR Ultra speed switching characteristics Small temperature coefficient of forward characteristics Satisfactory Wave detection efficiency For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier

    GERMANIUM DIODES

    DO-35(GLASS)
    0.075(1.9) MAX. DIA.

    1.083(27.5) MIN.

    0.154(3.9) MAX.

    Mechanical Data
    Case : DO-35 glass case Polarity : Color band denotes cathode end Weight : Approx. 0.13 gram
    0.020(0.52) MAX. DIA.

    1.083(27.5) MIN.

    Dimensions in inches and (millimeters)

    Absolute Ratings (Limiting Values)


    Symbols VRRM lF lFSM TSTG/TJ TL Parameters
    Zenerepetitive Peak Reverse Voltage Forward Continuous Crrent Peak Forward Surge Current(t=1S) Storage junction Temperature Range Maximum Lead Temperature for soldering 10S at 4mm from Case TA=25

    Value 1N60
    40 30 150 -65 to+125 230

    1N60P
    45 50 500

    Units
    Volts mA mA

    Electrical characteristics
    Symbols Parameters Test Conditions
    IF=1mA 1N60 1N60P 1N60 1N60P 1N60 1N60P 1N60 1N60P

    Value Min Typ.


    0.32 0.24 0.65 0.65 0.1 0.5 2.0 6.0 60 1 400

    Max.
    0.5 0.5 1.0 1.0 0.5 1.0

    Units

    VF lR CJ

    Forward Voltage

    IF=30mA IF=200mA VR=15V VR=1V f=1MHz VR=10V f=1MHz

    Volts A pF % ns /W

    Reverse Current Junction Capacitance Detection Effcienc(See diagram 4) Revese Recovery time Junction Amblent Thermal Resistance

    trr RJA

    VI=3V f=30MHz CL=10pF RL=3.8k IF=IR=1mA Irr=1mA RC=100

    RATINGS AND CHARACTERISTIC CURVES 1N60P

    FIG.1-FORWARD CURRENT VERSUS FORWARD VALTAGE(TYPICAL VALUES)


    IF(mA)

    FIG.2-REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE


    IR(UA)

    500 450 400 350 300 250 200 150 100 50 0

    0.70 0.60 0.50 0.40 0.30 0.20 0.10 0

    0.2

    0.4

    0.6

    0.8

    1.0 VF(V)

    10

    15

    20

    25

    30

    VR(V)

    FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS REVERSE APPLIED VOLTAGE


    C(pF)

    FIG.4-DETECTION EFFICIENCY MEASUREMENT CIRCUIT

    20 18 16 14 12 10 8 6 0

    output D.U.T.

    Input:3VRMS

    CL 10pF

    RL 3.8kW

    VR(V)

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