CHNG 3: ON NH PHAN CC (Bias Stability) CHO BJT

3.1 Gii thieu 3.2 Anh hng cua len tnh iem Q 3.3 Anh hng cua nhiet o len tnh iem Q 3.4 Phan tch he so on nh 3.5 Bo chnh nhiet dung Diode 3.6 Anh hng cua nhiet o va cac thong so ky thuat

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3.1 Gii thieu

9 Tnh iem Q 9 S thay oi cua tnh iem Q: Nhiet o, , nguon cung cap,

3.2 Anh hng cua len tnh iem Q

Rc

VCC

Tong quat: Khuech ai dong: I C KVL moi noi BE: V BB I CQ

Rb VBB Re

(V BB

Xet anh hng cua len tnh iem Q: Xem 1; VBE 0.7(Si) va ICBO(Re + Rb) << (VBB - VBE) I CQ

= I B + ( + 1) I CBO = I E + I CBO = I B Rb + V BE + I E Re V BE ) + I CBO ( Re + Rb ) Re + (1 ) Rb

Lu y: Phan tch co the dung cho CB, CE, CC

e giam anh hng cua len ICQ, chon Re >> Rb / I CQ

V BB 0.7 R e + Rb /

Thiet ke: 1. Chon tnh iem Q 2. Chon

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V BB 0.7 Re

Rb =

min Re
10

; tnh toan mach phan cc nh trong chng 2

2

Cac ky thuat phan cc s dung hoi tiep (feedback) Khai niem hoi tiep Hoi tiep dong (current feedback)

VCC V BE RE + RB / VCC V BE hay I BQ = R E + R B I CQ =

Hoi tiep dong va ap (current & voltage feedback)

VCC I CQ RC + I BQ R F + V BE + I CQ R E I CQ R F VCC = I CQ RC + + V BE + I CQ R E
I CQ hay:

I BQ

VCC V BE RC + R E + R B / VCC V BE = ( RC + R E ) + R B
3

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3.3 Anh hng cua nhiet o len tnh iem Q

Anh hng cua nhiet o: 9 ien ap ngng: V BE

= V BE 2 V BE1 = k (T2 T1 ) vi k = 2.5 mV / oC (Si)

9 Dong phan cc nghch bao hoa: I CBO 2

V du: Xet mach ien trong phan (3.2) vi: Rb = 400; Re = 100; ICQ = 10 mA tai 25 oC. Tm s thay oi cua ICQ khi nhiet o len en 55 oC vi a) Silicon; b) Germanium.

R V BB V BE + I CBO (1 + b ) Re Re I CQ 1 V BE Rb I CBO = + 1+ R e T T R e T I CQ e KT 1 k Rb I CBO1 1+ = + Re Re T T k T Rb KT + + 1 I e 1 I CQ = CBO 1 R e Re

I CQ

Tnh iem Q: Xem 1 va Re >> Rb / ; t cong thc tong quat:

I CBO I CBO 2 I CBO1 I CBO1 ( e KT 1) = = T T T

= I CBO1 e K (T2 T1 )

) vi K = 0.07 / C
o

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Tong quat:

I CQ
I CQ

2.5 10 3 (55 25) 400 0.07( 55 25) 1 = + 1 + I CBO1 e 100 100 = 0.75 10 3 + 36 I CBO1

a) Silicon: ICBO1 = 1 A ICQ = 0.786 mA b) Germanium: ICBO1 = 100 A ICQ = 4.35 mA Nhan xet: i) ICQ (Silicon) << ICQ(Germanium) ii) Vi Silicon, ICQ chu yeu do VBE

3.4 Phan tch he so on nh (stability analysis)

Bai toan: ICQ = ICQ(ICBO, VBE, , ) se thay oi nh the nao khi cac bien phu thuoc thay oi Gia thuyet: Gia s cac bien phu thuoc thay oi mot lng nho, s dung khai trien Taylor:

dI CQ I CQ

nh ngha: He so on nh (stability factors)

I CQ = I CBO
;

I CQ dI CBO + V BE SV = I CQ

I CQ dV BE +
;

d + ...
S = I CQ I CQ

SI =

Lu y 1: Cac he so on nh c tnh tai iem Q danh nh (nominal Q) Vi cac thay oi nho: ICQ dICQ; ICBO dICBO; VBE dVBE; d Suy ra: ICQ SIICBO + SVVBE + S +
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I CBO

I CQ

I CQ V BE

I CBO

V BE

Lu y 2: Thc te, thay oi rat nhieu, khi o ICQ van c tnh t cong thc tren vi S c tnh trc tiep theo nh ngha: Xet mach trong phan 3.2: I CQ

S =

I CQ

(V BB

Tnh cac he so on nh: (Gia s Re >> Rb / (1-)Rb )

V BE ) + I CBO ( Re + Rb ) Re + (1 ) Rb

R e + Rb Rb = 9 SI = 1+ I CBO Re + (1 ) Rb Re I CQ 1 = 9 SV = V BE Re + (1 ) Rb Re

I CQ

9 Tnh S: Tnh trc tiep t nh ngha, s dung I CQ

1+

va gia s bo qua ICBO

I CQ 2 I CQ1

(V BB V EE ) Rb + ( + 1) Re R + ( 1 + 1) Re = 2 b 1 Rb + ( 2 + 1) Re

I CQ 2 I CQ1 I CQ1

I CQ I CQ1

( Rb + R e ) 1 [Rb + ( 2 + 1]) Re

I CQ1 Rb + R e S = R + ( + 1) R 2 e 1 b
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I CQ

 V du: a) Tm ICQ tai nhiet o phong, s dung cac gia tr danh nh b) Tnh ICQ vi cac thay oi tren VCC, Re, ; nhiet o thay oi t 25 125 oC. a) V BB

I CQ1 Rb + R e Rb 1 Suy ra: I CQ + + 1 I V R CBO R BE R + ( + 1) R + ... e e 2 e 1 b Trong o: I CBO = I CBO1 ( e KT 1) V BE = kT = 2 1 M rong: I CQ = S I I CBO + SV V BE + S + SV VCC + S R Re CC e I CQ I CQ Vi SV ; SR CC e VCC Re

= VCC

Dung cong thc tong quat:

R1 ; Rb = R1 // R2 R1 + R2

I CQ =

(V BB V BE ) + I CBO ( Re + Rb ) = 10.6 mA Re + (1 ) Rb

b) Tnh cac he so on nh:

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R e + Rb = 5.25 mA/mA Re + (1 ) Rb 1 = - 10 mA/V SV Re I CQ1 Rb + R e S R + ( + 1) R = 0.0116 mA 2 e 1 b SI =

Tnh SVcc va SRe, t cong thc tong quat: I CQ

SVCC =

I CQ

S Re

Xac nh cac ai lng bien thien:

VCC I CQ = - 0.1 mA/ = 2 Re [Re + (1 ) Rb ]

= 0.11 mA

V BB = Re + (1 ) Rb VCC (V BB V BE )

(V BB V BE ) + I CBO ( Re + Rb ) , suy ra: Re + (1 ) Rb R1 = 0.91 mA/V = Re + (1 ) Rb R1 + R2

=

Suy ra o dch tnh iem Q nhieu nhat

I CBO = I CBO1 ( e KT 1) V BE = kT = -250 mV

= 2 1 = 50 VCC = 4V

Re = 20

I CQ = S I I CBO + SV V BE + S + SVCC VCC + S Re Re = 9.3 mA

o dch tnh iem Q xung quanh gia tr danh nh 9.3 / 2 = 4.65 mA
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3.5 Bo chnh nhiet dung Diode

Nhan xet: Thay o nhiet o anh hng len dong phan cc ICQ chu yeu do VBE. Giam SV: Tang Re, tuy nhien lam giam dong phan cc. Giam VBE: Bo chnh nhiet Bo chnh nhiet dung Diode: Chon Diode sao cho: Nguon dong: Mat khac: V B Suy ra:

V D V BE = T T

I BB = I D + I BQ = I D +

I EQ

= V D + I D Rd = V BEQ + I EQ Re

+1

I EQ =

V D V BEQ + I BB Rd Re + [ Rd /( + 1)]

I EQ T

Cau hnh thc te:

V D / T V BE / T =0 Re + [ Rd /( + 1)]

- Giai quyet c bai toan la chon Diode thch hp (matching) vi TST - S dung trong cac mach tch hp (Integrated Circuit)

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 V du: Xac nh anh hng cua nhiet o len tnh iem Q

VB VB VD V V VD + + I BQ ; gia s I BQ << B va I B << B Rb Rd Rb Rd VB VB VD V D Rb Rd I BB VB = + + I BB Rb Rd Rd Rb + Rd V B V BEQ 1 VCC Rd V D Rb I EQ = V = + BEQ R R + R Re R R + e b d b d I EQ 1 Rb V D V BEQ Bien thien theo nhiet o: = T T Re Rb + Rd T I EQ V D V BEQ 1 k = V hai TST la giong nhau: = = k , suy ra: T R e 1 + Rb / R d T T
Mach tng ng:

I BB =

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3.6 Anh hng cua nhiet o va cac thong so ky thuat

V du: Transistor 2N1016, Silicon npn 1. ien tr nhiet toi a: jc = 0.7 oC/W 2. Cong suat tieu tan toi a vi bo tan nhiet ly tng tai 25 oC: PC = 150 W 3. Nhiet o moi noi toi a: Tj,max = 140 oC 4. Cac thong so cc ai tuyet oi tai 25 oC: 1) IC = 7.5 A 2) IB = 5 A 3) Breakdown voltage: a) BVCBO = 30 V b) BVEBO = 25 V c) BVCEO = 30 V 5. Dong ICBO cc ai tai ien ap VCB cc ai tai 25 oC = 10 mA 6. He so khuech ai dong tai VCE = 4V, IC = 5A: 10 18 7. Tan so cat CE (cutoff frequency): f = 30 kHz

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