Baigiangmachdientu2 121218210934 Phpapp01

Trng i Hc Cng Nghip TP.
HCM
Khoa Cng Ngh in T

Bi ging

Tp.HCM 08-2008
L'
T2
S2
C'
T1
S1
L'
C'
+
-

i
r
i
i
r
v

g
R
L
R
L
v

-
Mc lc

Chng 1: p ng tn s thp ca mch khuch i ghp RC ............................ 3
1.1 p ng tn s ca mch khuch i ................................................................ 3
1.2 Phng php kho st p ng tn s ca mch khuch i ............................ 3
1.3 Kho st p ng tn s thp ca mch khuch i BJT ghp RC ................... 6
1.4 Kho st p ng tn s thp ca mch khuch i FET ghp RC ................ 11
Bi tp chng 1 ................................................................................................... 16
Chng 2: p ng tn s cao ca mch khuch i ghp RC ............................ 19
2.1 B khuch i transistor tn s cao .............................................................. 19
2.2 Phn tch mch khuch i BJT tn s cao .................................................. 21
2.3 Phn tch mch khuch i FET tn s cao .................................................... 26
2.4 Mch khuch i a tn RC dng BJT ........................................................... 29
2.5 Mch khuch i a tn RC dng FET ........................................................... 31
2.6 Tch s li kh tn GBW ........................................................................... 32
Bi tp chng 2 ................................................................................................... 35
Chng 3: Mch khuch i cng hng ............................................................. 38
3.1 Mch cng hng n dng BJT transistor .................................................... 38
3.2 Mch cng hng n dng FET ................................................................... 43
3.3 Mch khch i ghp bin p dng BJT thng dng ...................................... 46
3.4 Mch khuch i iu hp ng b dng FET ............................................... 47
3.5 Mch khuch i iu hp ng b dng FET ghp 2 tng ........................... 49
Bi tp chng 3 ................................................................................................... 51
Chng 4: Mch lc th ng ............................................................................... 54
4.1 Mc ch ng dng ......................................................................................... 54
4.2 Phn loi mch lc .......................................................................................... 54
4.3 L thuyt c s v mch lc ........................................................................... 55
4.4 Mch lc th ng ........................................................................................... 55
Phn II: Thit k v m phng ............................................................................. 59
Chng 5: Mch khuch i cng sut audio ....................................................... 73
5.1 c im ca mch khuch i cng sut ...................................................... 74
5.2 Mch khuch i cng sut ghp ti trc tip (lp A) .................................... 74
5.3 Mch khuch i cng sut ghp t ra ti(lp A) ........................................... 76
5.4 Mch khuch i cng sut ghp bin p (lp A) ........................................... 77
5.5 Kho st mch khuch i cng sut lp B .................................................... 79
5.6 Cc dng mch cng sut lp B ...................................................................... 82
Bi tp chng 5 ................................................................................................... 91

Chng 1: p ng tn s thp mch khuch i

Chng 1
P TUYN TN S THP CA MCH
KHUCH I GHP RC
1.1. p ng tn s ca mch khuch i
Mi mch khuch i u c mt khong tn s hot ng nht nh, gi
l bng thng (Band width) hot ng ca h thng.
K hiu: BW =[f
H
f
L
] (Hz)
Mch khuch i c c trng bi hm truyn h s khuch i, c
gi l A
i
hay A
v
.
p tuyn bng thng ca mch khuch i
) (dB A
x
f(Hz)
A
2
m
A
f
L
f
H
Midband

1.2. Phng php kho st p ng tn s ca mch khuch i
Cc bc kho st:
i. Bc 1: V mch tng ng vng tn s hot ng
ii. Bc 2: Thit lp biu thc ca hm truyn h s K
iii. Bc 3: V biu Bode cho tn s v pha

V d: Cho mch in tng ng sau
0
Vo
I1
ie
C
R1
R2
Rc
V1
vi
+
-

Ta c
jwC
1
R
jwC
1
R
R
1
Rc
v
i
i
Rc i
Vi
Vo
A
2
2
1
i
e
e
e
v
+
+
= = =
1

) R // R ( jwC 1
) jwCR 1 (
R R
Rc
jwC
) R R (
R R
)
jwC
1
R (
Rc A
2 1
2
2 1
2 1
2 1
2
v
+
+
+
=
+
+
+
=
Vy
) R // R ( jwC 1
) jwCR 1 (
R R
Rc
A
2 1
2
2 1
v
+
+
+
=
t
) R // R ( C
1
w ,
CR
1
w
2 1
2
2
1
= =
=>
)
w
w
j 1 (
)
w
w
j 1 (
R R
Rc
A
2
1
2 1
v
+
+
+
=
Vy:
2
2
2
1
2 1
v
)
w
w
( 1
)
w
w
( 1
R R
Rc
A
+
+
+
= (1)
v )
w
w
( arctg )
w
w
( arctg
2 1
= (2)
V u Bode cho tn s tn hiu
Khai trin decibel ta c:
bi
( )
2
2
2
1 2 1
v v
lg 20 A + )
w
w
( 1 lg 20 )
w
w
( 1 )
R R
Rc
lg( 20 A lg 20 dB + +
+
= = (dB)
Hay
2 1 0 v
A A A ) dB ( A + + =
Xp x gn ng
>>
=
=
+ =
) w w (
w
w
lg 20
) W w ( dB 3
) 0 w ( dB 0
)
w
w
( 1 lg 20 A
1
1
1
2
1
1

Biu Bode cho A1
2

Biu Bode cho cc A0, A1, A2

) (dB A
1
w(rad/s)

Biu Bode tng ca Av
Biu Bode cho pha tn hiu

Ta c )
w
w
( arctg )
w
w
( arctg =
2 1
t
2 1
+ =
Xp x gn ng
>
< < +
<<
=
) w 10 w ( , 90
) w 10 w
10
w
( ),
w
w
lg 1 ( 45
) w w ( , 0
1
o
1
1
1
1
o
1

u Bode cho 1, 2 Bi
w 10w
20
20dB/deca
) (dB A
x
w(rad/s)
W
1
10w
1
20
20dB/deca
W
2
10w
2
A1
A2
A0
) (dB A
v
w(rad/s)
W
1
A
20dB/deca
Mid-bank
W
2
3

Biu Bode cho gc pha tng
1.3. Kh BJT ghp RC
2 loi
ass cc E transistor (Emitter bypass capacitor). Kho

Lu

o st p ng tn s thp ca mch khuch i
Phng php kho st: n gin cho vic kho st ta tch ra
ghp RC ring bit
Ghp t byp
st p tuyn tn s trn mch ny nh cc bc nu trn
Ghp t ng vo v ra (Coupling capacitor)
:
Do c im chc nng ca mi loi t ghp trong m n quyt nh
n cc gi tr C coupling sao cho

V d: kho st p tuyn tn s thp c a mch khuch i sau
s nh hng n hot ng ca mch khuch i. T Emitter quyt
nh tn s ct di ca mch. T coupling ch ng vai tr l t lien
lc gia ng vo v ra.
Khi thit k mch ta ch
) coupling ( L ) ter Bypassemit ( L
f f >>
45
o
10
1
w
1
w
1
10w
10
2
w
2
w
2
10w
w(Rad/s)
- 45
o
- 90
o
90
o
10
1
w
1
10w
10
2
w
2
10w
w(rad/s)
o
4

Vcc
0
Re
Rc
Cc
R2 Ce
R1
Cb
ri
RL i
1K
60
2k
2k
10k
100
Bet a = 100
hi e = 1K

a. p ng ca t Bypass
B qua nh hng ca cc t Coupling bng cch ni tt chng, xt mch
tng ng tn hiu nh nh sau:
i
i
b
i
b
i
i
i
Rc
1k
Re
60
hie
Rb
1k
ri
10k
RL
100 Ce

i
i
b
i b
i
i
ri
10k
hie
Rb
1k
Rc
1k
Re
60
Ce
RL
100

b
i
i
b
i
L
i B i
i R r ) // (
Rc
1k
Re
60
ri//Rb hie
RL
100 Ce

5

Rc
1k
RL
100
Re
60
Ce
i
L
i
e
i B i
i R r ) // (
) // (
ie B i
h R r +

Ta c,
i
b i i
b i i
e
e
L
i
L
i
i
) R // r ( i
) R // r ( i
i
i
i
i
i
A = =
) R // r (
C j
1
R
C j
1
R
) h r // R (
1
R R
R
b i
e
e
e
e
ie i B
L C
C
+
=
e
e
e
i
e i
e
e
L C
b i C
C j
R
C j
R
R R
C j
1
R
R R
) R // r ( R
+

+
+
= , vi
=
+
= 20
) h r // R (
R
ie i B
i

[ ] ) R // R ( jC 1 ) R R (
R C j 1
R R
) R // r ( R
e i e e i
e e
L C
b i C
+ +
+
+
=
Hay,
[ ] ) R // R ( jC 1
R C j 1
) R R )( R R (
) R // r ( R
A
e i e
e e
e i L C
b i C
i
+
+
+ +
=
2
1
j 1
j 1
) 60 20 )( 100 K 1 (
) K 1 // K 10 ( K 1
+ +
= , Vi
= =
= =
s / Rad 23 . 133
C ) R // R (
1
s / Rad 3 . 33
C R
1
e i e
2
e e
1

6

Vy,
2
1
i
j 1
j 1
33 . 10 A
+
= , hoc
2
1
i
f
f
j 1
f
f
j 1
33 . 10 A
+
+
= , vi
=
=
Hz f
Hz f
25 . 21
3 . 5
2
1
2
2
2
1
dB
i
1 log 20 1 log 20 20 A

+ +
+ + = (dB)
li trung tn (h s khuch i trung tn): c nh ngha l
gi tr ca h s khuch i ti tn s ct di ca mch, hay
. ) f ( A A
L i im
=
Biu Bode
20
) (dB A
i
33.3
20dB/decade
133.23
Mid-bank gain
32dB
L
w(rad/s)
) (dB A
i
w(Rad/s)
w
1
10w
1
20
20dB/decade
w
2
10w
2
A
1
A
2
A
0
Theo tnh cht ca biu Bode tn s ct di ca mch
, hay s / Rad 23 . 133
L
= Hz 25 . 21 f
L
=
Biu pha
45
o
10
1
w
1
w
1
10w
10
2
w
2
w
2
10w
w(Rad/s)
90
o
- 45
o
- 90
o

Biu pha tng hp
7

ng ca t coupling b. p
ypass bng cch ni tt n, ta xt mch tng B qua nh hng ca t B
ng tn hiu nh nh hnh di.

Dng php bin i tng ng Thevenin ta c

(error: ngun p, thiu k hiu i
0
)
Ta c,
i
i i
i i
0 b b L L
i
i i i i i
A
0 b b i
i
i r
i r i i i i

= =

i
ie b
b
i
ie B
B
C
L C
C
r
h // R
C j
1
r
1
h R
R
C j
1
R R
R

+
+ +
=
[ ] [ ] ) h // R r ( C j 1 ) R R ( C j 1
C j C j
h R
r R R
ie b i b C L C
b C
ie b
i b C
+ + + +

=
45
o
10
1
w
1
w
1
10w
10
2
w
2
w
2
10w
w(rad/s)
90
- 45
o
- 90
o
2
o
0
27
Rc
1k
RL
100
Rb
1k
ri
10k
hie
Cb Ce
i
b
b
i
i
L
i
i
Cb Ce ri
Rc
1k
hie
RL
100
Rb
1k
10k
i
b
b
i
i
L
i i
i r
8

n gin ta ch cn xt cc tn s ct di:
) R R ( C
C L C
1 L
+
1
= , v
) h // R r ( C
ie b i b
2 L
+
1
=
Do mc ch thit k l cc t Coupling ch ng vai tr t lin lc
gia ng vo v ra. N mch hot ng n nh, tc cc tn s ct do
ca ta
n
t coupling s khng nh hng n tn s ct di ca mch (f
L
ng vi
t Bypass), th:
2 L 1 L
, <<
L
.
Thng ta chn cc t C
C
v C
B
sao cho:
L 2 L 1 L
10
1
= =

1.4. Kh st p ng tn s thp ca mch khuch i FET ghp RC
Cho mch khuch i FET c trng nh hnh v
o

0
Vcc
2
3
1
Vi
1MEG
Rd
Rs
r i
RL
Rg
Cs
Cg
Cd
Cc linh kin FET trong
c t c cc gi tr:
s

Phng php kho st p ng tn s thp ca m
BJ T, ta chia mch lm hai trng hp: p ng c ng
ng tn hiu nh nh hnh v
th
g
m
: tr dn (khong vi
mili 1/)
r
d
: Tr khng ng ra DS
(vi chc - vi trm K)
C
gs
: gi tr cm khng ng
vo GS (vi PF - vi chc
PF)
C
gd
: gi tr cm khng ng
ra GD ( 0.1 PF - vi PF)
ch FET cng ging nh vi
a c Bypass C
s
v p
ca t Coupling.
a. p ng ca t Bypass
Mch tng
9

0
1MEG
Vi
Rd Rs
r i
RL
Rg
Cs
gs m
v g
G
S
r
ds
D
i
L
i
0

Mch tng ng thevenin
0
1MEG
Vi
Cs
Rs Rd
r i
RL
Rg
D i
L
i
0
G
S
r
ds
gs ds m
v r g
+
_

Ta c, , v dt
s g gs
v v v =
ds m
r g =
0
Rd
RL Cs
Rs
S
r
ds
D
i
L
i
0
i
v
+
_
+
_
S
v

Dng php bin i tng ng Thevenin cho on mch MO
0
Cs
Rs
RL
Rd
S
r
ds
i
v
+
_
+
_
S
v
D
i
0
i
L
M
10

0
Rd
RL
s
R ) 1 ( +
) 1 ( +
s
C
i
v
+
_
D
i
0
i
L
r
ds
M

Vy,
i
i
i
0
0
L L
i
L
v
v
v
v
i
i
i R
v
v
A

= =
( )

+ + +
+
=
)]
C j
1
//( R [ 1 R // R r
1
R R
R R
S
S L d ds
L d
d L

S S
S d L ds
d L
S S
S
d L ds
d L
C R j 1
R
) 1 (
R // R r
1
) R // R (
) 1 (
C R j 1
R ) 1 (
R // R r
1
) R // R (
+
+
+
+
+
=
+
+
+ +
=

t
) 1 (
R // R r
R
d L ds
i
+
+
=
Ta c,
S S i S i
S S
d L
S S
S
i
d L v
R C R R j R
C R j 1
) R // R (
) 1 (
C R j 1
R
R
1
) R // R (
) 1 (
A
+ +
+
+
=
+
+
+
=

S
S i
i S
S S
S i
d L
S i S S i
S S
d L
C
R R
R R
j 1
C R j 1
R R
R // R
) 1 ( C R R j R R
C R j 1
) R // R (
) 1 (
+
+
+
+ +
=
+ +
+
+
=
Hay,
S S i
S S
S i
d L
v
C ) R // R ( j 1
C R j 1
R R
R // R
) 1 (
A
+
+
+ +
=

Vit gn li ta c:
11

( )
=
=
=
S S i
2
S S
1
d L ds m vm
C ) R // R (
1
C R
1
R // R // r g A

2
1
vm v
s
s
A A
+
+
= , trong
b. p ng ca t ghp cc mng
Mch tng ng tn hiu nh nh hnh v
L
d
+
R
V
-
i
-
Vi
g
r
L
gs
V
V
ds
r
g
gs
R
m
+
Cd
R

Hm truyn ca mch:

i
gs
gs
L
i
L
v
v
v
v
v
v
v
A = =

i g
g
d
L d ds
d
L
L m
v
r R
R
sC
1
R // R // r
sC
1
R
R g
A
+
+
+
=
V rt ln do
g
R 1
r R
R
i g
g
+

L
vm v
s
s
A A
+
= . Trong :
( )
( )
+
=
=
d ds L d
L
d L ds m vm
R // r R C
1
R // R // r g A

c. p ng ca t ghp cc cng
Mch tng ng tn hiu nh nh hnh v
12

L
i
d
+
R
V
Cd
- -
Vi
g
r
L
gs
V
V
ds
r
g
gs
R
m
+
R

Hm truyn ca mch:

( )
d
i g
g
L d ds m v
i
gs
gs
L
i
L
v
sC
1
r R
R
R // R // r g A
v
v
v
v
v
v
A
+ +
=
= =

L
vm v
s
s
A A
+
= . Trong :
( )
( )
+
=
=
g i d
L
d L ds m vm
R r C
1
R // R // r g A

Gi tr thng rt ln nn
g
R
L
rt nh v vy Cd nh hng rt t n mo tn s
thp, mo ch nh hng do Cs gy ra.
13

Bi tp chng 1
1.1 Cho mch nh hnh:
I i
Re
Rb RL
100
Ce
5uF
4K 1K
I
L

Cho bit . 50 h ; K 1 h
fe ie
= =
a. V mch tng tn hiu nh tn s thp
b. Tm hm truyn
) s ( i
) s ( i
A
i
L
i
=
c. V biu Bode cho bin v pha
1.2 V biu Bode cho bin v pha ca hm truyn:

( )( )( )
( )( )( )

+ + +
+ + +
=
2000 s 12 s 2 s
400 s 300 s 10 s
10 A
4

1.3 Cho mch nh hnh:
VCC
I i
I
L
10uF
4K
10K
10K
1K

Cho bit . 100 h ; K 1 h
fe ie
= =
a. Tm hm truyn
) s ( i
) s ( i
A
i
L
i
=
b. V biu Bode cho bin v pha
1.4 Cho mch nh hnh:
14

1K
+
Vi
-
Vcc=10V
Ve
1K
Cc
1K
5K
5K

Bit . 100 h
fe
=
a. Tnh ton phn cc cho mch ( )
CE , CQ
V I
b. V mch tng tn hiu nh tn s thp
c. Tm hm truyn
) s ( i
) s ( i
A
i
L
i
=
d. Xc nh Cc tn s ct thp 3dB l 5Hz.
1.5 Cho mch nh hnh:
R1
10K
Ce
Cb
RL
47K
180
Vcc (12V)
i
ri
0
Rc
Re
1K
Cc
100uF
1K

Bit g
m
=5.10
-3
, C
gs
=20pF, C
gd
=0.5pF, r
ds
=17K
a. V mch tng ng tn hiu nh tn s thp ca mch in trn
b. Tnh
i
L
i
i
i
A =
c. V biu Bode v pha cho p ng min tn s thp ca mch

15

1.6 Cho mch nh hnh:
-
Vdd
Q2
FET N
5K
Vi
100K 250
5K
250
100K
L
V
+
100uF

Bit
-1 3
m ds
10 . 5 g ; K 5 r = =

a. Tm
i
L
v
V
V
A =
b. Tm
i
L
v
V
V
A = nu t Bypass cc ngun ni song song c hai in tr 250
16
Chng 2: p ng tn s cao mch khuch i

Chng 2
P NG TN S CAO CA MCH
KHUCH I GHP RC

2.1 B khuch i tr ansistor tn s cao
tn s thp mch khuch i c p ng ph thuc t ghp v bypass. tn s
cao p ng tn s p ng tn s b gii hn do cc in dung bn trong ca BJ T,
FET
2.1.1 Mch tng ng hnh PI ca BJT

Trong :
r
bb
: in tr t l trc tip vi rng base r
bb
50 10
: in tr mi ni
e ' b
r
EQ
fe
e ' b
I
h 025 . 0
r = (T= ) K 300

oe
h
1
:tr khng ra
L
oe
R
h
1
>>

EQ
fe
' bb e ' b ' bb ie
I
h 025 . 0
r r r h + = + = (T= ) K 300
Tn s ct(cut off fr equency)

Tn s ct l tn s ct 3dB ca li dng ngn mch ng ra
0 v
i
c
CE
i
i
=

17

( )
e ' b e ' b c ' b e ' b e ' b
C r 2
1
C C r 2
1
f
=
+
=

Gii hn tn s cao : l tn s m ti li dng mch CE bng 1
T
f
fe
2
fe T
h f 1 h f f

=

M hnh CB tn s cao

Tn s ct : l tn s ct 3dB ca li dng ngn mch ng ra

v

= f h f
fe

M hnh trn khng tn ti ti v tn s ct c th xc nh bng:
T
f
=
+
h i
=
fe
fb
0 v
i
sc
i
h / j 1 i
A
cb
( ) ( ) 1; to 2 . 0 , f h 1 f 1 f
fe T
= + + =

gi tr tiu biu l 0.4
M hnh PI vi ngun p:

Trong :
EQ
EQ
e ' b
fe
m
I 40
025 . 0
I
r
h
g = = (T= ), K 300
ib
m
h
1
g =
Tm tt cc phn t mch tng ng PI:
r
bb
50 10

EQ
fe
e ' b
I
h 025 . 0
r =

EQ
EQ
e ' b
fe
m
I 40
025 . 0
I
r
h
g = =
18

T
m
T
EQ
e ' b T
fe
e ' b
w
g
w
I 40
r w
h
C = = =
t l ( vi p=1/2 n 1/3
c ' b
C )
p
' cb
V

Ta tham kho datasheet ca BJ T C1815

2.2 Phn tch mch khuch i BJT tn s cao
2.2.1 c tnh Tr ansistor tn s cao
dy tn s cao, p ng tn s ca transistor b gii hn do cc in dung k
sinh gia cc lp tip gip PN. Thng thng cc C
be
c gi tr vi trm vi
chc pF, vi BJ T cao tn C
be
khong vi chc pF.
C
be
,

C
bc
,

quyt nh tn s gii hn trn trong p ng cao tn.
C
bc
c gi tr vi chc vi pF, vi BJ T cao tn C
bc
<1 pF
Tn s ct trn
( )
c ' b e ' b e ' b
C C r 2
1
f
+
=

19

Tn s gii hn trn ca BJ T
= f f
T

Cc thng s c cung cp ca nh sn xut cho BJ T cao tn
max BE max T c ' b e ' b
V , P , f , C , C ,
2.2.2 Phng php kho st
Dng mch tng qut
RL
Rc
Vcc
+
R2
ri
i
+
Re
Cb
i
Cc
Ce
R1

Mch tng ng AC

Gi tr cc t ghp thng c chn
>>
= =
b e
c c b
C C
10
1
X , C C

S tng ng Miller

, v
L C L
e b B i e b
R // R R
r // R // r R
=
=

T
m
e b
w
g
C

C
Ii
Rc
R' L
CM Cb'e
+v b' e
RL
R
Rb'e gm vb'e
eQ
ie e b
I
mV 25
m h r =
,
e b
m
r
g
=
20

c b L m M
C ) R g 1 ( C

+ =
)
C
C
1 (
r
R
c b
e b e ' b
=

c b e b m
C R g C

=
Lu : R v C ch dng tnh tr khng ng r a
) jwC 1 R //( R Z
) C C //( R Z
C 0
c b e b e b in
+ =
+ =

Hm tr uyn

i
e b
e b
e b m
e b m
L
i
L
i
i
V
V
V g
V g
i
i
i
A

= =

)] C C ( jwR 1 [
1
R R
R
R g A
M e b L C
C
e b m i
e b
+ +
+
=

) j 1 (
1
A A
H
im i
+
=
Vi
( )
+
=
+
=

M e b e b
H
L C
e b C m
im
C C R
1
R R
R R g
A

Tn s ct tr n ca mch l
( )
M e b e b
H
C C R 2
1
f
+
=

(Hz)

p tuyn tn s

f
dB
i
A
H
f

2.2.3 V d: Xc nh p ng tn s cao ca mch sau
21

Mch tng ng DC :

C
1u
c
e
VCC=12V
L
C
Q1
Q2SC1815
0
R1
33k
10u
R
c
r
0
R
b
V4
100mVac
220
1u
C
0
e
470
1k
R2
6.8k
i
R
0 0
1k
BB
220
VCC=12V
0
R
1k
R1
33k
R
0
VCC=12V
c
Q2
Q2SC1815
0
220
0
V
Q3
Q2SC1815
e
B
R
R
R2
6.8k
e
c
R
1k

K 6 . 5
K 8 . 6 K 33
K 8 . 6 Kx 33
R
B
=
+
=
V 1 . 2
K 8 . 6 K 33
K 8 . 6
x 12 V
BB
=
+
=

Transistor C1815 c 300 =
mA 8 . 5
K 22 . 0
300
K 6 . 5
7 . 0 1 . 2
R
R
V V
I
E
B
BE BB
C

+
=
+
=
( )
E C C CC CE
R R I V V + =
0 5V 0.22) 5.8(1 - 12 > = + = (Transsistor lm vic ch K)
Mch tng ng tn s cao:
22

C m
b'e
R
C
v
C
M
b'e
R
i
b'e
L
g
r
L
m
i
C
i
i
b'e
R'
b'e
b'e
r
M R
v
i
R
b
C
g

Trong :
i
i
i
r
v
i =
K 3 . 1
I
mV 25
h r
CQ
ie e ' b
= = =
K 5 . 0 K 3 . 1 // K 6 . 5 // K 1 r // R // r R
e ' b B i e ' b
= = =
K 3 . 0 K 47 . 0 // K 1 R // R R
L C
'
L
= = =
23 . 0
1300
300
r
g
e ' b
m
= =
=
(1+0.23x300)x2=140(pF) = + =
c ' b
'
L m M
C ) R g 1 ( C
li dng in:

( )
M e ' b e ' b L C
C
e ' b m i
C C jwR 1
1
R R
R
R g A
+ +
+
=
=
H
im
j 1
1
A

Vi:

( )
=
+
=
=
+

=
+
=

) s / rad ( 10 4 . 7
C C R
1
w
78
47 . 0 1
500 1 23 . 0
R R
R R g
A
6
M e b e b
H
L C
e b C m
im

Tn s ct trn ca mch: MHz 2 , 1 f
H
=
23

H H
i
L
i v
j 1
1
37
j 1
1
1
47 . 0
78
r
R
A A
+
=
+
= =

Biu bode:

2
H
v
db
v
w
w
1 lg 20 37 lg 20 A lg 20 A

+ = =
=31.4-
2
H
w
w
1 lg 20

+

A
31, 4
v
( dB)
1, 2
( MHz)
f

2.3 Phn tch mch khuch i FET tn s cao
tn s cao cc in dung cc mi ni trong FET l v .
gs
C
gd
C
t l vi ( )
gs
C
2 / 1
GS
V

0 V
GS

t l vi ( )
gd
C
2 / 1
GD
V

0 V
GD

V
GS GD
V V >> do <<
gd
C
gs
C
gs
C c gi tr khong 50pF cc FET c tn s thp nh hn 5pF cc FET cao
tn. T hi tip thng nh hn 5pF v cc IG-FET cao tn th nh hn
0.5pF.
gd
C
24

Mch khuch i FET tn s cao dng C-S:
Rg
Cd
Rd
ri
Rs Vi
Cs
Vdd
0
Cg
RL

S tng ng:
gm Vg rds
Cgd
RL
G
S
D
rds
ri
Vi Cgs

C
gs
t vi chc vi pF
C
go
t vi pF nh hn 1pF
tn s cao xem nh ni tt C
g
,C
s
, C
d
Ta xt 2 trng hp:
* Tr ng hp 1: 0 r
i

S tng ng Miller
V
rds//Rd//RL
CM Cgs
+v gs
Vi
L
gm vgs
ri

C
M
=[1 +g
M
(r
ds
// R
d
// R
L
)]C
gd

( ) ( )
( )
M gs
i
M gs
gs
L d ds gs m
i
gs
gs
L
i
L
v
C C jw
1
r
C C jw
1
V
R // R // r V g
V
V
V
V
V
V
A
+
+
+
= = =
25

( )
( )
M gs i
L d ds m v
C C jwr 1
1
R // R // r g A
+ +
=

H
vm v
w
jw
1
1
A A
+
=
Trong :

( )
( )
+
=
=
M gs i
H
L d ds m vm
C C r
1
w
R // R // r g A

( )
M gs i
H
C C r 2
1
f
+
=

Biu Bode:
f
dB
v
A
H
f

* Tr ng hp 2 0 r
i
=
S tng ng ca mch

R Rd
V
L
Cgd
+
L
ds
( - g +j wCgd) Vi
-
m
r

( )

+ =
gd
L d ds i gd m L
jwC
1
// ) R // R // r ( V jwC g V
2 H
1 H
vm
i
L
v
w
w
1
w
w
1
A
V
V
A
+
+
= =
26

Trong :

( )
( )
=
=
=
gd
m
2 H
L d ds gd
1 H
L d ds m vm
C
g
w
R // R // r C
1
w
R // R // r g A

( )
gd
m
2 H
L d ds gd
1 H
C 2
g
f
R // R // r C 2
1
f
Biu Bode:

2.4 Mch khuch i a tn RC dng BJT

V
A
1 H
f
2 H
f
f
27

Tr khng Miler c xc nh
' AA
Z

c ' b m 2 2 m c ' b
c ' b ' AA
' AA
C g / C R g sC / 1
1
sC Y
Z
1
+
+ = =
Mch tng ng tn hiu nh ca mch khuch i a tn:

Trong :

e ' b 1 b i 1
r // R // r R =

e ' b 2 b 1 c 2
r // R // R R =
[ ]
c ' b L 2 c m e ' b 2
C ) R // R ( g 1 C C + + =
li dng in:
28

= =
1
c ' b e ' b
2 1
2
2 1
2
1
2
2 m
L 2 c
2 c m
i
1 ' b
1 ' b
2 ' b
2 ' b
L
i
L
i
C
C C s 1 1
s 1
s
1 R
s
1
R g
R R
R g

i
v
v
v
v
i
i
i
A

Trong :

C R
1
;
C R
1
2 2
1
1 1
1
= =
( )
c ' b 2 m e ' b 1
C R g 1 C C + + =
Tn s ct c xc nh t phng trnh:
2
h
2
1
c ' b e ' b
2 1
2
h
w
C
C C
w w
w
1 +
+
2
1 1
2
2 1
=

Gii ra ta c:
( ) ( )

=
2
2
2
1
1
2
2
1
1
2
2
2 1
h
q 4 q 1 2 q 1 2
q 2

Vi
1
c ' b e ' b
C
C C
q
+
= .
2.5 Mch khuch i a tn RC dng FET

Vdd
Vi
-
+
V
L
i
r
g
R
d
R

1 c
C
g
R

2 c
C
d
R
L
R

29

ds g d
r // R // R
i
r
g
R gs
C
gs
C
gd
C
gd
C
s 1 g m
V g
s 2 g m
V g
ds L d
r // R // R
+
L

Vi
V

Lm tng t nh vi trng hp BJ T vi cc gi tr c xc nh:
2 1 2 1
C , C , R , R
-

( ) [ ]
( ) [ ]
g ds d 2
g i 1
L d ds m gd gs 2
g d ds m gd gs 1
R || r || R R
R || r R
R || R || r g 1 C C C
R || R || r g 1 C C C
=
=
+ + =
+ + =

2.6 Tch s li kh tn GBW( The gain-band width product)
GBW l mt thng s c dng c lng p ng ca mch khuch i
bng rng trong bc thit k.

h im
f A GBW=
Trong :
li dy gia : A
im
tn s ct cao : f
h

2.6.1 Tch s li kh tn ca mch khuch i BJT n tn:
Mch khuch i CE n tng l tng ( ->0), li dy gia xp x v
tn s ct cao 3dB l , v vy:
L
R
fe
h
f
e ' b
m
T fe
C 2
g
f f h GBW
= =

c dng c lng gii hn tn s cao ca BJ T v c cho bi nh
sn xut.
T
f
Gi tr thc t b gim bi in dung Miller:
( ) ( )
M e ' b
m
M e ' b e ' b
e ' b m BJ T
C C 2
g
C C R 2
1
R g GBW
+
=
+
=
2.6.2 Tch s li kh tn ca mch khuch i FET n tn:
( )
( )
+
=
M gs i
s ds m FET
C C r 2
1
R || r g GBW
FET
GBW thng c chun ha bng cch gi s rng:
30

d ds i
R || r r =
( )
M gs
m FET
C C 2
1
g GBW
+
=
2.6.3 Tch s li kh tn ca mch khuch i a tng
Ta xt mch khuch i a tng sau:

Gi s:
; 0 C r
c ' b ' bb
= = R R
c L
<<
e ' b b i e ' b b c e ' b
r || R || r r || R || R R =

e ' b e ' b
1
C R
1
w =

n
1
e ' b m
1
e ' b m
1
e ' b m
1
e ' b m
m
i
1 b
1 b
2 b
1 bn
bn
bn
L
i
L
i
w / s 1
R g
w / s 1
R g
w / s 1
R g
w / s 1
R g
g
i
v
v
v
v
v
v
i
i
i
A
= =

li dy gia: . ( )
n
e ' b m im
R g A =
Tn s 3dB tha phng trnh 2 / A A
im i
= .
2 / n
2
1
h
w
w
1
+ =
2 / 1
2
1 2
f
f
w
w
n / 1
1
h
1
h
= =
S suy gim tn s ct cao theo s tng khuch i:

31

n 1 2 3 4 5
1 h
f / f
1.0 0.64 0.51 0.44 0.39

32

Bi tp chng 2
2.1 Cho mch nh hnh. Bit li bng thng gia
i L
i i l 32dB, tn s 3dB trn
l 800KHz v dng tnh emitter 2mA, gi s 0 C r
c ' b ' bb
= = . Tm .
e ' b , e ' b fe
C r , h
V
1K
1K
L
I
BB
I i
Vcc

2.2 Cho mch nh hnh. Bit . mA 10 I ; 0 r ; pF 5 C ; 100 h ; s / rad 10 w
EQ bb' c b' fe
9
T
= = = = =
20uF
1K
10K
20uF
Vcc
I
20uF 100
L
1K RL=1K 10K
I i

Tm:
a.
i L im
i i A =
b. Tn s 3dB trn
h
f
2.3 Transistor hai hnh di c cc thng s sau: pF 10 C ; pF 1000 C ; K 1 r
c ' b e ' b e ' b
= = =
v . Xc nh li v GBW ca mi dng.
1
m
05 . 0 g

=
33

Vi
1K
Vcc
L
I
Vcc
L
1K
V
10K
100K
20uF
-
I i
20uF
10K 1K
+
1K

2.4 Vi tham s transistor nh bi 2.3. Tm li v GBW ca mch sau:
1K
20uF
I
L
20uF
V
1K
20uF
10K
Vcc
1K
I i
BB
100
20uF
10K
V
BB
100

2.5 Cho mch nh hnh. Bit g
m
=5.10
-3
, C
gs
=50pF, C
gd
=0.5pF, r
ds
=15K.

0
Vcc
Ce
Cc
Re
R2
Rc
Vi
Cb ri
RL
2
3
1
1k
1K
2K
100
1M 100uF
-
+
L
V

34

a. V mch tng ng tn hiu nh min tn s cao
b. Tm
i
L
v
v
v
A =
c. V biu Bode cho p ng min tn s cao
2.6 Cho mch ni cascade nh hnh. Gi tr linh kin K 10 r ; M 1 R ; K 1 r
ds g i
= = = ;
Tm li dy gia v bng thng 3dB. . K 10 R
L
=

Vdd
Vi
-
+
V
L
i
r
g
R
d
R

1 c
C
g
R

2 c
C
d
R
L
R
35
Chng 3: Mch khuch i cng hng

36
Chng 3
MCH KHUCH I CNG HNG
3.1. Mch cng hng n dng BJT transistor
3.1.1. Phn tch l thuyt
S mch l thuyt

Mch tng ng tn hiu nh

Mch tng ng tn hiu nh dng rt gn

(b qua thnh phn R-C gia cc C v E)


37
Cc thng s lin quan
Cc thng s ca Transistor 2SC1815:
f
T
=80MHz, C
ob
=2pF, h
FE
= 300
Gi tr cm khng ca cun L c tnh theo cng thc sau :
r 4 . 25 l 9 . 22
n r
L
2 2
+
=
Trong :
r : bn kn vng dy (cm)
n : s vng dy
l : chiu di cun dy(cm)
L: cm khng (uH)
Tr khng vo:
e ' b p b i i
r // R // R // r R =
Vi
( )
2
C c C
c
2
p
Q r wLQ
r
wL
R = = =
r
c
l ni tr ca cun dy.
C
Q l h s phm cht ca cun dy (thng
C
Q =
100)
in dung tng tng ng:
M e ' b
C C ' C C + + =
Hm truyn

i
e ' b
e ' b
e ' b m
e ' b m
L
i
L
i
i
V
V
V g
V g
i
i
i
A = =

jwL
1
jwC
R
1
1
g
R R
R
i
m
L C
C
+ +
+
=
=
i m
R g
+
L C
C
R R
R
|
.
|
\
|
+
wL
R
C wR j 1
1
i
i

( ) = =
i
i
L C m
i
L
i V
r
R
R // R g
r
R
A A
|
.
|
\
|
+
wL
R
C wR j 1
1
i
i

Bng thng
Ta c ti tn s ct:

38
2
1
A
A
dB 3
A
A
o
i
dB
o
i
= =
2
1
wL
R
wCR 1
1
wL
R
wCR j 1
1
A
A
2
i
i
i
i
o
i
=
|
.
|
\
|
+
=
|
.
|
\
|
+
=
1
wL
R
wCR
2
i
i
=
|
.
|
\
|

Phng trnh c hai nghim dng:
-
|
|
.
|
\
|
+ + = 1
w
w
4 1
2
w
w
1
2 1
H

-
|
|
.
|
\
|
+ = 1
w
w
4 1
2
w
w
1
2 1
L

Vi
C R
1
w
i
1
= ;
L
R
w
i
2
=
Bng thng 3dB c xc nh:
BW= ( )
C R 2
1
w
2
1
w w
2
1
f f
i
1 L H L H
t
=
t
=
t
=
Tch s li kh tn:
GBW= = BW A
im

i m
R g
+
L C
C
R R
R
C R 2
1
i
t

GBW=
( )C R R 2
R g
L C
C m
+ t


39
Tn s cng hng
Tn s cng hng khi li t gi tr cc i:

LC 2
1
f
LC
1
w
0
wL
R
wCR ) A (
0 0
i
i max i
t
= =
=

3.1.2. Tnh ton cc gi tr trn l thuyt
) V ( 05 . 2
8 . 39
8 . 6 12
8 . 6 33
8 . 6 V
V
CC
BB
=
=
+
=
) (K 64 . 5
33 8 . 6
33 8 . 6
R
BB
O =
+
=
) mA ( 22 . 12
1 . 0
100
K 6 . 5
6 . 0 05 . 2
R
R
V V
I
E
BB
BE BB
CQ
=
+
=
+
|
=
O = =
|
= = 614
22 . 12
25 . 300
I
25 .
r h
CQ
e ' b ie

pF 972
10 . 80 . 2
614
300
f 2
r g
C
6
T
e ' b
T
m
e ' b
=
t
=
t
|
=
e
~
49 . 0
614
300
r
g
e ' b
m
= =
|
=
( ) ( )
( ) pF 590 2 . 600 49 . 0 1
C R // R g 1 C
c ' b C L m M
= + =
+ =


40
100nF 590pF 972pF nF 100
C C ' C C
M e ' b
~ + + =
+ + =

C=100nF
Hm truyn
( ) e e e e +
+
=
/ / j 1
1
R R
R
R g A
2 1 L C
C
i m i
( ) e e e e +
= =
/ / j 1
1
r
R
R // R g
r
R
A A
2 1 i
i
L C m
i
L
i v
Tn s cng hng
KHz 3 . 706
10 . 101548 . 10 . 5 . 0 2
1
LC 2
1
f
12 6
0
=
t
=
t
=

O = = K 2 . 2 wLQ R
C p

O ~ = 50 r // R // R // r R
e ' b p BB i i

Bng thng
KHz 6 . 31
10 . 101548 50 2
1
C R 2
1
BW
12
i
=
t
=
t
=

li
( ) e e e e +
=
/ / j 1
1
r
R // R
R g A
2 1 i
L C
i m v
( )
2
2 1
i
L C
i m
dB
v
/ / 1 log 20 )
r
R // R
R g log( 20 A e e e e + =

Biu Bode l thuyt
Da vo biu thc trn ta nhn thy rng :
- Khi e =
0
e : tc l lc gi tr trong biu thc trong cn
tin v 0 => G = A
im
= dB.
- Khi e cng xa
0
e , lc ny biu thc trong cn c gi tr
rt ln => A
i
c gi tr rt b.

Da vo yu t ta v c biu Bode cho mch cng hng:


41

3.2. Mch cng hng n dng FET
3.2.1. Phn tch l thuyt
S mch l thuyt

Mch tng ng tn hiu nh

42
Mch tng ng tn hiu nh dng rt gn

Vi :
P i i
R // r R = , v
M e ' b
C C ' C C + + =
Cc thng s lin quan:
Cc thng s ca FET: r
ds
, C
gs
, C
gd
, g
m
c cho bi nh sn xut
Thit lp hm truyn:

i
gs
gs
gs m
gs m
L
i
L
i
i
v
v
v g
v g
i
i
i
A = =

)
L j
1
C j (
R
1
1
g
r // R R
r // R
i
m
ds d L
ds d
e
+ e +

+
=

)
L j
R
CR j ( 1
R
g
r // R R
r // R
i
i
i
m
ds d L
ds d
e
+ e +

+
=

)
L
R
CR ( j 1
1
R g
r // R R
r // R
i
i
i m
ds d L
ds d
e
e +

+
=

t:
= e
= e
L
R
C R
1
i
2
i
1

Ta c
) ( j 1
1
R g
r // R R
r // R
A
2
1
i m
ds d L
ds d
i
e
e
e
e
+

+
=

a
v
gs
+
_
C
L
i
R
i
i
i
r
v
i =
R
d
R
L
L
i
gs m
v g

43
) ( j 1
1
R g
r // R R
r // R
r
R
r
R
A A
2
1
i m
ds d L
ds d
i
L
i
L
i v
e
e
e
e
+

+
= =

) ( j 1
1
r
R
) R // r // R ( g A
2
1
i
i
L ds d m v
e
e
e
e
+
=

Lm tng t nh trng hp BJT ta c:
C R 2
1
BW
i
t
=

GBW=
( )
C r 2
R // r // R g
BW A
i
L ds d m
vm
t
=

Tn s cng hng:

LC
1
0
= e , hay
LC 2
1
f
0
t
=
3.2.2. Tnh ton cc gi tr trn l thuyt
Hm truyn
R
i
= R
p
//r
i
= r
i
= 50 (do R
p
>> r
i
)
|
|
.
|
\
|
=
A
A
=
P
GSQ
P
DSS
DS
D
m
V
V
1
V
I 2
v
i
g =0,5.10
-3
(1/)
(xem thm datasheet ca JFET 2SK30A )
( )
gd L d ds m M
C . ) R // R // r ( g 1 C + = =0.9pF
C=C+ ' C C C
M gs
~ + =1003pF

(
e
e +
=
L
r // R
C ) r // R ( j 1
1
r
r // R
) r // R // R ( g A
i P
i P
i
i P
ds d L m v

Bng thng
MHz 17 . 3
10 . 1003 . 50 . 2
1
C R 2
1
BW
12
i
=
t
=
t
=


44
Tn s cng hng
MHz 1 . 7
10 . 1003 . 10 . 5 . 0 2
1
LC 2
1
f
12 6
0
=
t
=
t
=

Biu Bode l thuyt
)
L
R
CR ( j 1 log 20 ) 3 . 0 log( 20 A
i
i
dB
v
e
+ e + =
Da vo biu thc trn ta nhn thy rng :
- Khi e =
c
e : tc l lc gi tr trong biu thc trong cn tin
v 0 => A
v (max)
= -10 dB.
- Khi e cng xa
c
e , lc ny biu thc trong cn c gi tr rt
ln => A
v
c gi tr rt b.

Da vo yu t ta v c biu Bode cho mch cng hng:
3.3. Mch khch i ghp bin p dng BJT thng dng

Mch tng ng AC

Mch tng ng rt gn
RL
R1
L'
C' n1
Cc
Ce R2
VCC
ri
n2
Re
Ii
Q1
Cb
Rc
Ii
Rc gm.Vbe
Cb'e+CM Rb//rb'e
RL
ri
n2
VL
C' n1
L'

45

Vi: C=C+a
2
(Cbe + C
M)
), v R
i
= r
i
//R
P
//(
2
b
a
e ' rb // R
)
Trong
2
1
n
n
a =
Z
t
=
2
2
i
U
=
2
1
1
2
1
a
Z
i a
U
=
a
1
n
n
U
U
1
2
1
2
= = ; a
n
n
i
i
2
1
1
2
= =
Ta c:
)
' L
1
C ( j
R
1
1
R R
R
ag
i
a
v
a
v
v . g
v . g
i
i
i
Ai
i
L C
C
m
i
e ' b
e ' b
e ' b m
e ' b m
L
i
L
e
e +
+
= = =
)
1
' L
R
CR ( j 1
1
R R
R
R ag Ai
i
i
L C
C
i m
e
e +
+
=
Tng t l lun ta c:
L C
C
i m im
R R
R
R g a A
+
=
Tn s cng hng: f
0
=
C ' L 2
1
t
vi C=C+a
2
(Cbe + C
M)
)
R
i
= r
i
//R
P
//
2
b
a
e ' rb // R

3.4. Mch khuch i iu hp ng b dng FET:
a
v
e b'
+
_
C
L
i
R
i
i
R
C
C
R
L
L
i
e b m
v g
'

46

Vic ghp cc b khuch i iu hp ng b t c li cao v dy thng
hp hn.
Lm tng t nh trn ta c c cc kt qu:

( )( )
|
|
.
|
\
|
+
= =
w
w
w
w
jQ 1
1
r
R // r R // r ag
v
v
A
0
0
i
i
p i L ds m
i
L
V

Trong :
( )( )
i p i 0 i
C ' C R // r w Q + =
( ) | | { }
L ds m gd gs
2
i
R // r g 1 C C a C + + =

) C ' C ( L
1
w
i
2
0
+
=
li ti tn s cng hng ( )
0
w w = l:
( )
p i
p
L ds m vm
R r
R
R // r ag A
+
=
Bng thng 3dB:

( )( )
i p i
C ' C R // r 2
1
BW
+ t
=
Tch s li kh tn:
Mch tng ng tn hiu nh tn s cao:


47

( )
|
|
.
|
\
|
+
(
t
=
i i
L ds m
C ' C
1
r 2
R // r g
a GBW
3.5. Mch khuch i iu hp ng b dng FET ghp 2 tng:

Mch tng ng tn hiu nh tn s cao:

li p:
i
1 g
1 g
2 g
2 g
L
i
L
v
v
v
v
v
v
v
v
v
A = = =
( ) | |
2
0
0
i
L ds m i m
w
w
w
w
jQ 1
R // r ag ) r / R ( R ag
(
|
|
.
|
\
|
+

Trong :

) C ' C ( L
1
w
i
0
+
=

p g ds p i
R // R // r R // r R = =
( )
i 0 i
C ' C R w Q + =
li ti tn s cng hng ( )
0
w w = l:
( ) | |
p i
p
L ds m m vm
R r
R
R // r ag R ag A
+
=
Bng thng 3dB c c t phng trnh:
2
w
w
w
w
Q 1
2
0
0
2
i
=
(
|
|
.
|
\
|
+

( )
(
+ t
=
|
|
.
|
\
|
=
t
=
R C ' C 2
1
643 . 0
Q
f
643 . 0 1 2
Q 2
w
BW
i i
0 2 / 1
i
0

L'
T2
S2
C'
T1
S1
L'
C'
+
-

i
r
i
i
r
v

g
R
L
R
L
v
i
i
r
v

L
v
L
R
ds
r
2 g m
v g
a
v
1 g

1 g m
v g
a
v
2 g

p
R
i
C
i
C
p
R
g
R
ds
r i
r
L'
+
-
C'
- -
+
C'
L'
+


48
Tch s li kh tn:

( ) | |
( )
i i
L ds m m 2 / 1
i
0
vm
C ' C r 2
R R // r ag ag 643 . 0
1 2
Q 2
w
BW . A GBW
+ t
=
t
= =

49
Bi tp chng 3
3.1 Cho mch cng hng nh hnh:

a. Tm L mch cng hng ti 30Mhz
b. Tm bng thng mch khuch i
c. Tnh li dng bit 2pF C 500MHz; f 100; h 0; r ; K 1 r
c b' T fe bb' e ' b
= = = = =

3.2 Mch nh hnh cng hng ti tn s 10MHZ v c bng thng 3dB l 1MHz.

a. Tm
2 1
n n c li p cc i ti
0
w . li l bao nhiu?
b. Tm
1
n n c bng thng mong mun
c. Tnh L cng hng:
= = = = = = = ' ' C ; 100 R ; pF 1 C ; pF 10 C ); 0 r ( K 1 h ; 50 h
L c ' b e ' b ' bb ie fe
10pF
3.3 Mch khuch i cng hng ng b c thit k cng hng ti tn s
100KHz v bng thng 2KHz.

10K
L
I
1K
1K
L
VCC
100

i
i

1 c
C

2 c
C

e
C
-
.
+
9K
Vi

L , n
2
n
' '
C
L
R
1
n
)
`

L
V

50

a. Tm
2 2 1 1
L , C , L , C v
1
R
b. Tnh li
i L
v v bit , MHz 103 f
T
= , 100 h
fe
= K 1 r
e ' b
= , , 50 r
' bb
= pF 2 C
c ' b
=
3.4 Cho mch cng hng nh hnh. Bit g
m
=
1 3
10 . 5

O , C
gs
=50pF, C
gd
=0.5pF,
r
ds
=20KO, n1=n2=5.

a. Tm tn s cng hng ca mch
b. Tm li p Av ca mch
c. Tm BW v GBW
3.5 Cho mch cng hng nh hnh. Bit = 100, V
CC
= +5V, C
b'e
= 120pF, C
b'c
=
10pF, n
1
=8, n
2
= 4
VCC
n1
0
RFC
+
L1
0,12uH
150
Ce
Re n2
ri
Rb
100K
_
500
47p
VL
Cb
Cc
330
Vi
RL

a. V mch tng ng tn hiu nh tn s cao
b. Xc tn s cng hng ca mch khuch i trn
100
10K
I
L
Ii

1
R
1
C
2
C
1
L
2
L
i
2K
Vi
20uF
2K
Cd
100
L
Rs
+
r
-
Cb
Rd
L
Vdd
V
C'
L
n1
Cs
n2
R
0.5uH
50
30pF


51
c. Xc nh li trung tn ca mch
d. Xc nh BW v GBW

Chng 4: Mch lc
52
Chng 4
MCH LC TH NG
4.1. Mc ch ng dng
- B lc c vai tr quan trng trong cc mch in t. Nhng phn t c s
trong mch lc ch gm in tr (R), t in (C), v cun cm (L).
- Thng thng gm 2 mch lc RC v RLC. Mch lc RC c dng
nhiu v linh kin r v chim t din tch. Cn mch lc RLC t thng
dng v c in cm (L) kh tiu chun ha v c gi tr rt ln phm vi
tn s thp nn trong thc t kh thc hin v gi thnh t, li cng knh
.
- Mch lc s lm suy gim nng lng qua n m khng c kh nng
khuych i. Kh phi hp tng tr vi cc mch ghp.
- b tc cc nhc dim trn ngi ta thm vo cc phn t khuch
i nh transistor, vi mch, v.v, c th khuych i tn hiu , phi hp
tng tr, iu chnh suy gim.
4.2. Phn loi mch lc
Da vo c im cu to, ta phn ra hai loi: mch lc th ng v mch
lc tch cc. C hai loi mch lc ny u c cc dng p ng tn s sau:
- Mch lc thng cao (High pass Filter)
- Mch lc thng thp (Low pass Filter)
- Mch lc thng di (Band pass Filter)
- Mch lc chn di (Reject Band Filter)
p ng tn s

Mch lc thng thp Mch lc thng cao

f
f
H

f
f
H

dB
in
out
v
v
dB
in
out
v
v
Chng 4: Mch lc
53

Mch lc thng dy (Band pass) Mch lc chn dy (Band
Stop)

4.3. L thuyt c s v mch lc
4.3.1. Khi nim v hm truyn mch lc
Ma ch lo c
0 0

Hm truyn ca mch lc c nh ngha l t s gia in p tn hiu ra
Vo trn in p tn hiu vo Vi theo biu thc:
4.3.2. Hm truyn tng qut theo tham s S ( e = j s )

0 1
1 n
1 n
n
n
0 1
1 m
1 m
m
m
B S B ... S B S B
A S A ... S A S A
) s ( H
+ + + +
+ + + +
=

Vi K l h s ph thuc vo cu to ca mch v
const B ; const A
k i
= = cng ph thuc vo cu to ca mch
Hm truyn thng gp c dng :

n
n
2
2 1
S B ... S B S B 1
1
) s ( H
+ + + +
=

1 A
0
= , a thc bc khng vi : 0 A ... A A
m 2 1
= = = =
4.4. Mch lc th ng
4.4.1. Mch lc thng thp
a. Mch lc RC
C1
R1

Hm truyn ca mch
f
f
H

dB
in
out
v
v
f
L

f
f
L

dB
in
out
v
v
f
H

f
Chng 4: Mch lc
54
RC j 1
1
C j
1
R
C j
1
) ( H
e +
=
e
+
e
= e
b. Mch lc thng thp RC bc 1:
S mch thc t
RL
Vi
C1
Vo
Ri

C R j 1
R
R
1
C R j 1
R
R // Z R
R // Z
v
v
) ( H
L
L
i
L
L
L C I
L C
i
0
e +
+
e +
=
+
= = e

L i L i
L
L
L
R CR jwR R
C jwR 1
C jwR 1
R
+ +
+
+
=

( )
|
|
.
|
\
|
+
+ +
=
C
R R
R R
jw 1 R R
R
i L
i L
i L
L

jwRC 1
1
R R
R
i L
L
+
+
, vi
i L
R // R R =

Hm truyn :
= ) w ( H
jwRC 1
1
R R
R
i L
L
+
+

Vi:

i L
R // R R =
Tn s ct:

RC 2
1
f
C
t
=

c. Mch lc thng thp bc 2
S mch thc t
C
R I
C
I1
VL
IL
RL
Vi
R

4.4.2. Mch lc thng cao
Chng 4: Mch lc
55
H thng thng thng
Trit di
Fc1 Fo Fc2

Vi Vo
C1
R1

a. Mch lc thng cao bc 1
S mch
C
Vo
Ri Vi RL

( ) jwRC
1
1
1
R // R jwC
1
1
1
R // R Z
R // R
V
V
A
L i
L i C
L i
i
o
V
+
=
+
=
+
= =
Vi
L i
R // R R =
Hm truyn : H=
jwRC
1
1
1
+
=
Tn s ct
RC 2
1
f
C
t
=
b. Mch lc thng cao bc 2
S mch :
C
Vo
IL I
R R Vi RL
C I1 RI

0 C2
0
R2
C1
Vi
R1
Vo

p ng tn s mch lc trit di

Chng 4: Mch lc
56

Trong mch lc trit di, R1 C1 l mch h thng s cho tn hiu tn s
thp i qua, R2 C2 l mch lc thng thng s cho tn hiu tn s cao i qua.
Tn s ct ca hai mch lc l Fc1 v Fc2. Nh vy khong tn s gia Fc1 v
Fc2 s khng qua c hai mch lc nn b loi b. ng ri nt chnh l p
ng tn s cua mch lc trit di.
Do hai mch lc rp song song nn ta c
1 1 2 2 2 1
, Z R C Z R C = = l hai
tng tr ca cu phn p .
Suy ra :
0 2
1 2 i
V Z
V Z Z
=
+

Mt cch khc c mch lc trit di l mch lc cu T i nh hnh v
di:

C
Vi
R
2C
0
0
0
0
0.5R
R
C
Vo

Nhnh th nht gm hai mch lc h thng ghp ngc u nn c t
in tng l 2C. nhnh th 2 l hai mch lc thng thng ghp ni tip ngc
u nn c in tr tng ng l 0.5R. Hai nhnh mch lc thng thng v
h thng c dng hnh ch T li c ghp song song nn c gi l mch lc
cu T i
phn tch p ng tn s ca mch lc trit di T i. Ta c th tnh
in p V1, V2 sau d kh V1 v V2 c Vo so vi Vi
Tn s cng hng ca mch l :

0
1
2
f
RC t
=
Mch lc trit di hnh trn c p ng tn s :

0.1 1 10 f/f0
0.9
Chng 4: Mch lc
57
PHN II
THIT K V M PHNG P.SPICE:

A .THIT K
1. Mch lc thng thp RC
S mch
RL
1k
Vi
C1
0.01uf
Vo
Ri
1k

1
1
1
O C L L
V
L
I I C L L
I
L
V Z R R
A
R
V R Z R j R C
R
j R C
e
e
= = =
+ +
+
+

Hm truyn :

1
1
L
L I
R
H
R R j RC e
=
+ +

Vi:
; ( )
L i
L i
i L
R R
R R R
R R
=
+

Tn s ct:

1
2
c
f
RC t
=

6
1 1
1 1 500 31,8
2 2 500 0, 01.10
R K K f KHz
RC t t

= = O = = =

2.Mch lc thng cao RC
S
mch :

Hm truyn :
1
1
1
H
j RC e
=
+

Tn s ct
1
2
C
f
RC t
=
6
1 1
10 1 15, 9
2 2 .1000.0, 01.10
C
R K K f KHz
RC t t

= = = =

3 Mch lc thng thp LC:
C
0.01uf
Vo
Ri
10k
Vi RL
1k
Chng 4: Mch lc
58
S mch
L1
0.2uH
1 2
Vo
RL;
100
VI
C2
220

1
1
1
L
L
A
L
L
R
R j C
Z
j R C
R
j C
e
e
e
= =
+
+

2 2
1 1
1 1
1
A L L L
L
A L L L L L
L
Z R R j R C
H
R
Z X j R C j R C j L j R LC R
j L
j R C
e
e e e e
e
e
+
= = =
+ + + + +
+
+

2 2 2
1
( 1) 1
L
L L
L L
R
j L j L
R j R LC LC
R R
e e
e e
= =
+ + +

Vi:

1
L
R
L
e = vi
1
e l h s tn hao ca mch

2
1
LC
e = tn s ct ca mch
Tn s ct 24 f MHz ~
4.Mch lc thng cao LC:
S mch :
L
1
2
VI RL
C
Vo

L
A
L
j R L
Z
j L R
e
e
=
+

2 2
( ) 1
1
L L L
L
L L L L
L
j R L j R L j L R j C
H
j R L
j L R j L R j L R j R LC
j C j L R
e e e e
e
e e e e
e e
+
= =
+ + + +
+
+

2 2
2 2
2
1 1
( 1)
L
L
L
j R LC
j R LC
j R C LC
e
e
e e
=
+
, Vi:
1
2
1
1
L
R C
LC
e
e
=
=

Tn s ct
6 12
1 1
5, 2
2
2 0, 2.10 .4700.10
f MHz
LC t
t

= = =

B . M PHNG P.SPICE
Chng 4: Mch lc
59
1 Mch lc thng thp (RC):
S mch :

0
R11
1k
V3
1Vac
0Vdc
C4
0.01uf
R9
50
R10
1k

Tn s ct : 30KHz
Biu bode

Biu bode thc t :
1K 10K 20K 50K 70K
100K
AvDb
-6
-8
-14
-16.5
-20
-9
27K
F

2 Mch lc thng thp (RC)bc 2
S mch
Chng 4: Mch lc
60

V5
1Vac
0Vdc
R12
50
R13
1k
C5
0.01uf
R15
1k
C6
0.01uf
R14
1k

Biu bode m phng:

Biu bode thc t:

1K 10K 20K
30K 40K
AvDb
-6
-8
-14
-16.5
-20
-9
-9
-12
-16.5
-20
-22.5
AvdB
F

Chng 4: Mch lc
61
3 Mch lc thng cao RC
S mch

C7
0.01uf
R17
1k
R18
50
V8
2Vac
0Vdc
R16
10k
0

Tn s ct 15.9KHz
Biu bode m phng:

Biu bode thc t:

500
1K 5K 10K 15K 20K 30K 40K 50K
AvdB
-26
-10.5
-6
-4.4
-3.7
-3
-2.8
-2

Chng 4: Mch lc
62
4 Mch lc thng cao RC bc 2
S mch
0
R20
1k
V3
1Vac
0Vdc
C8
0.01uf
R1
50
R19
10k
C9
0.01uf
R4
10k

Biu bode m phng:

Biu bode thc t:

1K
10K
20K 30K 40K 50K
AvdB
-32
-12
-7
-3.7
-3
-2.5
-2
70k
F
500

Chng 4: Mch lc
63
5 Mch lc thng di RC (bandpass):
S mch

C3
0.01uF
R5
1k
R7
1k
V2
1Vac
0Vdc
R6
10k
C2
0.01uf
R8
50
0

Biu bode m phng:

Biu bode thc t:

AvdB
F
100 250 500 10k 20k 30k 40k 50k 60k 70k
-10.5
-14
-15
-16.5

Chng 4: Mch lc
64
6 Mch lc chn di (band stop):
S mch

R21
1k
V10
1Vac
0Vdc
R23
470
0
R25
50
0
C11
472
C10
472
0
0
R24
1k
R22
1k
942
1n

Tn s ct :
Biu bode m phng:

Biu bode thc t:

AvdB
F
1k 10k
20k 30k 40k 50k 60k
70k
80k 100k
-16
-9
-10
-14

Chng 4: Mch lc
65
7. Mch lc thng thp LC bc 1
S mch

V4
1Vac
0Vdc
0
C1
220p
L1
0.2uH
1 2
R3
100

Tn s ct : 23,99MHz

Biu bode m phng:

Biu bode thc t:

AvdB
F
10M 20M 25M 30M 35M
-9.5
-3.5
-8.7
0
0.7
1.15

Chng 4: Mch lc
66
8 .Mch lc thng thp LC bc 2
S mch
L1
0.2uH
1 2
L2
0.2uH
1 2
R3
100
0
C2
220p
V7
1Vac
0Vdc
C1
220p

Biu bode

Chng 4: Mch lc
67
9 Mch lc thng cao LC bc 1:
S mch

R9
100
V10
1Vac
0Vdc
C7
4700p
L7
0.2uH
1
2
0

Tn s ct : 5.2MHz
Biu bode

Chng 4: Mch lc
68

10.Mch lc thng cao LC bc 2:
S mch
0
L9
0.2uH
1
2
V12
1Vac
0Vdc
C8
4700p
L8
0.2uH
1
2
R10
100
C9
4700p

Biu bode
Chng 4: Mch lc
69

11 .Mch lc thng di LC
Chng 4: Mch lc
70
S mch
C10
220p
L10
0.2uH
1 2
C11
4700p
0
V16
1Vac
0Vdc
L11
0.2uH
1
2
R11
100

Biu bode

Chng 5: Mch khuch i cng sut audio

Chng 5
MCH KHUCH I CNG SUT AUDIO
(Power Amplifier )
Mch khuch i cng sut c nhim v to ra mt cng sut ln kch
thch ti. Cng sut ra c th t vi trm mW n vi trm Watt. Nh vy mch
cng sut lm vic vi bin tn hiu ln ng vo: do ta khng th dng
mch tng ng tn hiu nh kho st nh trong cc chng trc m thng
dng phng php th.
Ty theo ch lm vic ca transistor, ngi ta thng phn mch khuch
i cng sut ra thnh cc loi chnh nh sau:
Khuch i cng sut loi A: Tn hiu c khuch i gn nh tuyn tnh,
ngha l tn hiu ng ra thay i tuyn tnh trong ton b chu k 360
o
ca tn
hiu ng vo (Transistor hot ng c hai bn k ca tn hiu ng vo).
Khuch i cng sut loi AB: Transistor c phn cc gn vng ngng. Tn
hiu ng ra thay i hn mt na chu k ca tn hiu vo (Transistor hot ng
hn mt na chu k - dng hoc m - ca tn hiu ng vo).
Khuch i cng sut loi B: Transistor c phn cc ti V
BE
=0 (vng ngng).
Ch mt na chu k m hoc dng - ca tn hiu ng vo c khuch i.
Khuch i cng sut loi C: Transistor c phn cc trong vng ngng ch
mt phn nh hn na chu k ca tn hiu ng vo c khuch i. Mch ny
thng c dng khuch i cng sut tn s cao vi ti cng hng v
trong cc ng dng c bit.
Hnh sau m t vic phn loi cc mch khuch i cng sut.
71

5.1. c im ca mch khuch i cng sut
Tn hiu c kho st trong mch thuc dng tn hiu c bin ln, nn
khi phn tch mch ta phi xem xt ch phn cc trong mch c 2 bn
k.
Khong tn s lm vic ca [20-20KHz], tn s audio
Tng khuch i cng sut nm ng ra ti, cc transsistor tn ny phi
c cng sut cao. Do hot ng cng sut cao nn chng ta nhiu nhit,
v vy n nh h s khuch i ca mch cng nh tng tui th ca
transsistor ta thng lp thm cc b phn tn nhit.
Vic tnh ton cng sut ca on mch mt cch tng qut:
dt ) t ( i ). t ( u
T
1
P
T
0
=
Cng sut ac trn ti R
L
:
L
2
Lm ) ac ( L
R ) I (
2
1
P =
Cng sut ca ngun cung cp:
CQ CC CC
I V P =
Cng sut tiu tn ca transistor
L CC T
P P P =
Hiu sut ca mch khuch i:
CC
) ac ( L
P
P
=
5.2. Mch khuch i cng sut ghp ti tr c tip (lp A)
Dng mch c bn:
Thit lp phng tr nh ng ti tng
CE L C CC
v R i V + =
L
CC
max C
R
V
i = , v
CC max CE
V v =
Vcc
Kho st xoay chiu:
Khi a tn hiu

i
V vo ng vo nh hnh trn, dng I
C
v in th V
CE
(tn hiu ra)
s thay i quanh im iu hnh Q. Vi tn hiu ng vo nh , v dng in cc
C
i
0
ri
Vi
Cb
20
RL
Rb
L
CC
C
R
V
i =
max
CE
v
C
i
max CE
v
CC
V
72

nn thay i rt t nn dng in I
C
v in th V
CE
ng ra cng thay i t quanh
im iu hnh.
Khi tn hiu ng vo ln, ng ra s thay i rt ln quanh im tnh iu hnh.
Dng I
C
s thay i quanh gii hn 0mA v V
CC
/R
C
. in th V
CE
thay i gia hai
gii hn 0V v ngun V
CC

TH1: Mch khuch i c phn cc, tc l ta c I
CQ
cho tr c
Th bin dng ac qua ti ln nht (vn m bo m thanh ng ra
trung thc) khi: )] I i ( , I min[ I I
CQ max C CQ Lm Cm
= =

TH2: Ta thit k phn cc sao cho cng sut cung cp cho ti l ln
nht
iu kin :
L
CC
CQ Cm Lm CQ max C max L
R 2
V
I i i I 2 i P = = = =
Khi cng sut ac trn ti:
L
2
CC
L
2
L
CC
L
2
Lm max L
R 8
V
R )
R 2
V
(
2
1
R ) I (
2
1
P = = =
Cng sut ngun cung cp:
L
2
CC
CQ CC CC
R 2
V
I V P = =
73

Hiu sut khuch i: % 25
4
1
P
P
CC
max L
max
= = =
5.3. Mch khuch i cng sut ghp t r a ti (lp A)
Dng mch c bn:

CE
v
C
i
max CE
v
L C
CQ
L C
C
CC
C
R R
I
R R
R
V
i
//
] [
2
max
+
=
Vcc

CE C R CC
v R i V + = (1)
Mt khc:
L C CQ R CQ R
i
~
i
~
I i
~
I i + + = + = (2)
V :
L C
C
C L
L C
C
C
L
R R
R
i
~
i
~
R R
R
i
~
i
~
+
=
+
= (3)
Th (2) vo (3) ta c:
C
L C
L
CQ
L C
C
C CQ R
i
~
R R
R
I )
R R
R
1 ( i
~
I i
+
+ =
+
+ = (4)
Thay (4) v (1) ta c:
CE C C
L C
L
CQ CC
v R ) i
~
R R
R
I ( V +
+
+ =
CE C C
L C
L
CQ
L C
L C
CC
v R ) i
~
R R
R
I
R R
R R
( V +
+
+
+
+
=
CE C CQ
L C
C
C
L C
L
CC
v R ) I
R R
R
i
R R
R
( V +
+
+
+
= (*)

Vy
L C
CQ
L C
2
C
CC
max C
R // R
] I
R R
R
V [
i
+
=
RL
ri
Cc
Cb
0
Rc
Rb
C
i
R
i
L
i
Vi
74

( V
CE
=0)

CQ
cho tr c
trung thc) khi:
)] I i ( , I min[
R R
R
I
R R
R
I )] I i ( , I min[ I
CQ max C CQ
L C
C
Cm
L C
C
Lm CQ max C CQ Cm

+
=
+
= =

nht
ta chng minh c rng:
( )
L C max L
R R P Max = Hiu sut khuch i:
% 33 . 8
P
P
CC
max L
= =

( )
L C max
R 2 R Max = Hiu sut khuch i:
% 58 . 8
P
P
CC
max L
max
= =

5.4. Mch khuch i cng sut ghp bin p (lp A)
Dng mch c bn:

Vcc

CE
v
C
i
max CE
v
CQ
L
CC
C
I
R a
V
i + =
2
max
0
N2
Rb
ri
Vi
N1
Cb
C
i
L
i
RL
75

CE 1 CC
v u V + = (1)
t
=
=
= =
= =
=
C L
2 1
2
1
C
L
2
1
2
1
2
1
i
~
a i
~
au u
a
N
N
i
~
i
~
a
N
N
u
u
N
N
a (2)
Th (2) vo (1) ta c:
CE L C
2
CE 2 CE 1 CC
v R i
~
a v au v u V + = + = + =
CE L CQ
2
L C
2
CC
v R I a R i a V + = (*)
Phng trnh ti tng
Vy
CQ
L
2
CC
max C
I
R a
V
i + = ( V
CE
=0)
CQ
cho tr c
trung thc) khi:
)] I i ( , I min[
R R
R
I
R R
R
I )] I i ( , I min[ I
CQ max C CQ
L C
C
Cm
L C
C
Lm CQ max C CQ Cm

+
=
+
= =
nht
iu kin
:
L
CC
Cm Lm
L
2
CC
CQ Cm CQ max C max L
aR
V
ai i
R a
V
I i I 2 i P = = = = =
Khi cng sut ac trn ti:
L
2
2
CC
max L
R a 2
V
P =
Cng sut ngun cung cp:
L
2
2
CC
CQ CC CC
R a
V
I V P = =
Hiu sut khuch i: % 50
2
1
P
P
CC
max L
max
= = =
Ch :
o in p nh thng BJ T
CC CE
V 2 V =
o Li bin p ln trnh bo ho t do dng ca BJ T
C
i
5.5. Kho st mch khuch i cng sut lp B
Trong mch khuch i cng sut lp B, ngi ta phn cc vi V
B
=0V nn
bnh thng transistor khng dn in v ch dn in khi c tn hiu ln a
vo. Do phn cc nh th nn transistor ch dn in c mt bn k ca tn
B
76

hiu (bn k dng hay m ty thuc vo transistor NPN hay PNP). Do mun
nhn c c chu k ca tn hiu ng ra ngi ta phi dng 2 transistor, mi
transistor dn in mt na chu k ca tn hiu. Mch ny gi l mch cng sut
y ko (push-pull).

Cng sut cung cp: (cng sut vo)
Ta c: Pi(dc) =V
CC
. I
DC

Trong I
DC
l dng in trung bnh cung cp cho mch. Do dng ti c
c hai bn k nn nu gi I
P
l dng nh qua ti ta c:

) P ( DC
I
2
I
=

V:
) P ( CC ) DC ( i
I
2
. V P
=

Dng ngun i Dng ngun n
Cng sut r a
Cng sut ra ly trn ti c th c tnh:
L
R

L
2
) RMS ( L
) AC ( O
R
V
P =
77

L
2
) P P ( L
) AC ( O
R 8
V
P

=

L
2
L
) AC ( O
R 2
V
P =
Hiu sut:
% 100 .
P
P
%
) DC ( i
) AC ( O
=
% 100 .
I
2
. V
R 2 / V
) P ( CC
L
2
) P ( L
=
V
L
) P ( L
) P (
R
V
I = nn % 100 .
V
V
.
4
%
CC
) P ( L
=
Tr ti a ca l nn hiu sut ti a l:
) P ( L
V
CC
V
% 54 . 78 % 100 .
4
%
(max)
=
=
Cng sut tiu tn tr ong tr ansistor cng sut:
Tiu tn trong 2 transistor:
Q 2
P =
) AC ( O ) DC ( i
P P
Vy cng sut tiu tn trong mi transistor cng sut:

2
P
P
Q 2
Q
=
Cng sut ra ti a:
Cng sut ra ti a khi =
) P ( L
V
CC
V

L
2
CC
max ) AC ( O
R 2
V
P =
Khi dng nh l:
L
CC
) P (
R
V
I =
V tr ti a ca dng trung bnh:
L
CC
) P ( (max) DC
R
V 2
I
2
I
=
Cng sut ng vo ln nht:
(max) DC CC max ) DC ( i
I . V P =

L
2
CC
L
CC
CC max ) DC ( i
R
V 2
R
V
.
2
. V P
=
Hiu sut ti a ca mch cng sut lp B l:
78

% 54 . 78 % 100 .
4
% 100 .
R / V 2
R 2 / V

% 100 .
P
P
%
L
2
CC
L
2
CC
) DC ( i
max ) AC ( O
(max)
=
=
=

Cng sut tiu tn ti a ca 2 transistor cng sut khng xy ra khi cng
sut ng vo ti a hay cng sut ng ra ti a. Cng sut tiu tn s ti a khi in
th hai u ti l:
CC CC ) P ( L
V
2
V 636 . 0 V
= =
V khi :

L
2
CC
2 (max) Q 2
R
V
.
2
P
=
Hiu sut ca mch cng c th c tnh nh sau:

L
2
) P ( L
) AC ( O
R 2
V
P =

= =
L
) P ( L
CC DC CC ) DC ( i
R
V
.
2
. V I . V P
% 100 .
V
V
.
4
% 100 .
P
P
%
CC
) P ( L
) DC ( i
) AC ( O

= =
%
V
V
. 54 . 78 %
CC
) P ( L
=
5.6. Cc dng mch cng sut lp B:
Trong phn ny ta kho st mt s dng mch cng sut lp B thng dng.
Tn hiu vo c dng hnh sin s cung cp cho 2 tng cng sut khc nhau. Nu tn
hiu vo l hai tn hiu sin ngc pha, 2 tng cng sut ging ht nhau c dng,
mi tng hot ng mt bn k ca tn hiu. Nu tn hiu vo ch c mt tn hiu
sin, phi dng 2 transistor cng sut khc loi: mt NPN hot ng bn k dng
v mt PNP hot ng bn k m.
to c 2 tn hiu ngc pha ng vo (nhng cng bin ), ngi ta
c th dng bin th c im gia (bin th o pha), hoc dng transistor mc
thnh mch khuch i c li in th bng 1 hoc dng op-amp mc theo kiu
voltage-follower nh din t bng cc s sau:
79

Mch to hai tn hiu ngc pha

5.6.1. Mch khuch i cng sut Push-pull lin lc bng bin th:
Dng mch c bn nh sau:

- Trong bn k dng ca tn hiu, Q
1
dn. Dng i
1
chy qua bin th ng ra to
cm ng cp cho ti. Lc ny pha ca tn hiu a vo Q
2
l m nn Q
2
ngng dn.
- n bn k k tip, tn hiu a vo Q
2
c pha dng nn Q
2
dn. Dng i
2
qua
bin th ng ra to cm ng cung cp cho ti. Trong lc pha tn hiu a vo Q
1
l m nn Q
1
ngng dn.
80

Ch l i
1
v i
2
chy ngc chiu nhau trong bin th ng ra nn in th
cm ng bn cun th cp to ra bi Q
1
v Q
2
cng ngc pha nhau, chng kt hp
vi nhau to thnh c chu k ca tn hiu.

Thc t, tn hiu ng ra ly c trn ti khng c trn vn nh trn m b
bin dng. L do l khi bt u mt bn k, transistor khng dn in ngay m phi
ch khi bin vt qua in th ngng V
BE
. S bin dng ny gi l s bin
dng xuyn tm (cross-over). khc phc, ngi ta phn cc V
B
dng mt cht
(th d transistor NPN) transistor c th dn in tt ngay khi c tn hiu p
vo chn B. Cch phn cc ny gi l phn cc loi AB. Ch l trong cch phn
cc ny dn in ca transistor cng sut khng ng k khi cha c tn hiu.
B
Ngoi ra, do hot ng vi dng I
C
ln, transistor cng sut d b nng ln.
Khi nhit tng, in th ngng V
BE
gim (transistor d dn in hn) lm dng
I
C
cng ln hn, hin tng ny chng cht dn n h hng transistor. khc
phc, ngoi vic phi gii nhit y cho transistor, ngi ta mc thm mt in
tr nh (thng l vi ) hai chn E ca transistor cng sut xung mass. Khi
transistor chy mnh, nhit tng, I
C
tng tc I
E
lm V
E
tng dn n V
BE
gim.
Kt qu l transistor dn yu tr li.

Mch khuch i cng sut loi AB dng bin p o pha v bin th
xut m

81

Ngoi ra, ngi ta thng mc thm mt in tr nhit c h s nhit m
(thermistor) song song vi R
2
gim bt in th phn cc V
B
b tr khi nhit
tng.
5.6.2 Mch cng sut kiu i xng - b tc:
Mch ch c mt tn hiu ng vo nn phi dng hai transistor cng sut
khc loi: mt NPN v mt PNP. Khi tn hiu p vo cc nn ca hai transistor,
bn k dng lm cho transistor NPN dn in, bn k m lm cho transistor PNP
dn in. Tn hiu nhn c trn ti l c chu k.

Mch cng sut kiu i xng- b tc
Bn k dng: dn, ngng
1
Q
2
Q

Bn k m: ngng, dn
1
Q
2
Q

Cng ging nh mch dng bin th, mch cng sut khng dng bin th
mc nh trn vp phi s bin dng cross-over do phn cc chn B bng 0V.
82

khc phc, ngi ta cng phn cc mi cho cc chn B mt in th nh (dng
i vi transistor NPN v m i vi transistor PNP). n nh nhit, 2 chn E
cng c mc thm hai in tr nh.

Mch i xng -b tc loi AB

Trong thc t, tng cng sut ca mch, ngi ta thng dng cc cp
Darlington hay cp Darlington_cp hi tip nh c m t nh hai hnh di y.
Mch khuch i cng sut dng 2 cp Darlington
83

5.6.3. Kho st vi dng mch thc t:
Trong phn ny, ta xem qua hai dng mch rt thng dng trong thc t: mch
dng transistor v dng op-amp lm tng khuch i in th.
a. Mch cng sut vi tng khuch i in th l tr ansistor :
Mch c dng c bn nh hnh

Mch cng sut dng cp Darlington-cp hi tip

Cc c im chnh:
84

Q
1
l transistor khuch i in th v cung cp tn hiu cho 2
transistor cng sut.
D
1
v D
2
ngoi vic n nh in th phn cc cho 2 transistor cng
sut (gi cho in th phn cc gia 2 chn B khng vt qu 1.4V)
cn c nhim v lm ng lin lc cp tn hiu cho Q
2
(D
1
v D
2
c
phn cc thun).
Hai in tr 3.9( n nh hot ng ca 2 transistor cng sut v
phng din nhit .
T 47F to hi tip dng cho Q
2
, mc ch nng bin ca tn
hiu tn s thp (thng c gi l t Boostrap).
Vic phn cc Q
1
quyt nh ch lm vic ca mch cng sut.
b. Mch cng sut vi tng khuch i in th l op-amp
Mt mch cng sut dng AB vi op-amp c m t nh hnh di:
- Bin tr R
2
: dng chnh in th offset ng ra (chnh sao cho ng ra bng 0v
khi khng c tn hiu vo).
- D
1
v D
2
phn cc thun nn: V
B1
=0.7v, V
B2
=- 0.7v

85

in th ca 2 transistor cng sut thng c thit k khong 0.6V, ngha l
gim th qua in tr l 0.1V.
BE
V
10
Dng qua l:
2 1
D , D
mA 46 . 9
560
3 . 5
R
V
I
3
3 R
= =
Dng cc thu ca hai transistor cng sut:
mA 10
10
V 1 . 0
R
V
I I
5
1 E
2 C 1 C
=
= =
Ta thy khng c dng in phn cc chy qua ti.
Dng in cung cp tng cng:
=1.7+9.46+10=21.2 mA
C 1 n
I I I I + + =
(Khi cha c tn hiu dng cung cp qua Opamp 741 l 1.7mA nh sn xut cung
cp)
Cng sut cung cp khi cha c tn hiu
=2 (standby) (standby) P
in n CC
I . V
=12Vx21.2=254mW
khuch i in th ca mch:
2 . 9
10
82
1
R
R
1 A
8
7
V
= + = +
Cng sut ra trn ti:

L
2
) P ( O
) AC ( O
R 2
V
P =
Gi s tn hiu vo c bin nh l 108.7mV
Ta c:
V 1 7 . 108 2 . 9 V
) P ( O
=
Do :
) W ( 0625 . 0
8 . 2
1
P
) AC ( O
= =
Dng in qua ti:
mA 125
R
V
I
L
) P ( O
) P ( O
= =
Dng trung bnh chy qua mi transistor khi c tn hiu:

mA 8 . 49 10 / 125
I / I I
C ) P ( O DC
= + =
+ =

Dng cung cp khi c tn hiu :
=1.7+9.46+49.8=61mA
DC 1 n
I I I I + + =
Cng sut cung cp khi c tn hiu:
86

W 732 . 0 12 . 61 V 2 . I P
CC n ) DC ( i
= = =
Hiu sut:
% 54 . 8 % 100 .
732
5 . 62
% 100 .
P
P
%
) DC ( i
) AC ( O
= = =
Ch : dn, ngng dn nn:
1
Q
2
Q
( ) V 25 . 2 R R I V
L E ) P ( O ) P ( 1 E
= + =
in th nh qua ti:
V 1 8 125 . 0 V
) P ( O
= =
Khi dn (bn k dng ca tn hiu) in th nh ti chn B ca l:
1
Q
1
Q
V 95 . 2 7 . 0 25 . 2 7 . 0 V V
) P ( 1 E ) P ( 1 B
= + = + =
in th ti ng ra ca Opamp
=2.95-0.7=2.25V
1 D 1 B 1
V V V =
Tng t khi dn:
2
Q
V 95 . 2 7 . 0 25 . 2 7 . 0 V V
) P ( 2 E ) P ( 2 B
= = =
in th ti ng ra ca Opamp
V 25 . 2 7 . 0 95 . 2 V V V
2 D ) P ( 2 B 1
= + = + =
Khi ngng dn, dn
1
Q
2
Q
V 55 . 1 7 . 0 25 . 2 V V V
1 D 1 1 B
= + = + =
Tng t khi dn, ngng
1
Q
2
Q
V 55 . 1 7 . 0 25 . 2 V V V
2 D 1 2 B
= = =
Dng bo ha qua mi transistor
mA 3 . 333
8 10
6
R R
V
I
L E
CC
) sat ( C
=
+
=
+
=
in th ti a:
O
V
V 67 . 2 8 3 . 333 V
max ) P ( O
= =

87

Dng sng ca mch khuch i

c. Mch cng sut dng MOSFET:
Phn ny gii thiu mt mch dng MOSFET cng sut vi tng u l mt
mch khuch i vi sai. Cch tnh phn cc, v nguyn tc cng ging nh phn
trn. Ta ch mt s im c bit:
- Q
1
v Q
2
l mch khuch i vi sai. R
2
to in th phn cc cho cc nn
ca Q
1
. R
1
, C
1
dng gii hn tn s cao cho mch (chng nhiu tn s
cao).
- Bin tr R
5
to cn bng cho mch khuch i visai.
- R
13
, R
14
, C
3
l mch hi tip m, quyt nh li in th ca ton mch.
- R
15
, C
2
mch lc h thng c tc dng gim sng d trn ngun cp in
ca tng khuch i vi sai.
- Q
4
dng nh mt tng o pha rp theo mch khuch i hng A.
- Q
3
hot ng nh mt mch n p n nh in th phn cc gia hai
cc cng ca cp cng sut
89

- D
1
dng gii hn bin vo cc cng Q
5
. R
16
v D
1
tc dng nh mt
mch bo v.
- R
17
v C
8
to thnh ti gi xoay chiu khi cha mc ti.

Cng sut 30W dng MOSFET

90

Bi tp chng 5

5.1 Cho mch khuch i cng sut nh hnh v , =50, coi Re 0
Cb
0
ri
Re
Vi
Rb
RL
Rc
+5V
4
0. 1/ 2W
Vcc
8/ 2W
20
Cc

a. Tnh cng sut ln nht m mch c th cung cp cho ti (P
Lmax
)
b. Tm R
b
v R
c
mch c th t c ch hiu sut khuch i ln nht
5.2 Cho mch khuch i cng sut nh hnh v bn,
=50, coi Re 0
Re
0. 1
0
ri
+12V
Cb
20
Vi
Vcc
RL
8/ 2W
R2
100
R1
330

Lmax
)
b. Tm R
1
v R
2
5.3 Cho mch khuch i cng sut nh hnh v bn, =50, N1/N2 =0.5, coi Re
0
91

N2
8/ 2W
50
ri
0. 1/ 2W
RL
Cb
Vi
Rb
0
Vcc
Re
N1
+5V

Lmax
)
b. Tm R
b

92

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